CN113539838A - Heat dissipation method for satellite-borne solid-state power amplifier high-power microwave device - Google Patents
Heat dissipation method for satellite-borne solid-state power amplifier high-power microwave device Download PDFInfo
- Publication number
- CN113539838A CN113539838A CN202110593216.3A CN202110593216A CN113539838A CN 113539838 A CN113539838 A CN 113539838A CN 202110593216 A CN202110593216 A CN 202110593216A CN 113539838 A CN113539838 A CN 113539838A
- Authority
- CN
- China
- Prior art keywords
- carrier
- welding
- soldering
- satellite
- heat dissipation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 33
- 230000017525 heat dissipation Effects 0.000 title claims abstract description 22
- 238000003466 welding Methods 0.000 claims abstract description 76
- 239000004065 semiconductor Substances 0.000 claims abstract description 24
- 239000012876 carrier material Substances 0.000 claims abstract description 23
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000007747 plating Methods 0.000 claims abstract description 12
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 11
- 229910052709 silver Inorganic materials 0.000 claims abstract description 9
- 239000004332 silver Substances 0.000 claims abstract description 9
- 238000012545 processing Methods 0.000 claims abstract description 8
- 238000007373 indentation Methods 0.000 claims abstract description 5
- 238000004381 surface treatment Methods 0.000 claims abstract description 5
- 238000005476 soldering Methods 0.000 claims description 57
- 230000004907 flux Effects 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 19
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 17
- 239000011248 coating agent Substances 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 15
- 238000005201 scrubbing Methods 0.000 claims description 11
- 229910000679 solder Inorganic materials 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 8
- 238000005520 cutting process Methods 0.000 claims description 8
- 238000007790 scraping Methods 0.000 claims description 5
- 238000005406 washing Methods 0.000 claims description 5
- 238000010521 absorption reaction Methods 0.000 claims description 4
- 238000005452 bending Methods 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 6
- 229910003460 diamond Inorganic materials 0.000 description 14
- 239000010432 diamond Substances 0.000 description 14
- 229910052782 aluminium Inorganic materials 0.000 description 9
- 239000002131 composite material Substances 0.000 description 9
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 235000009161 Espostoa lanata Nutrition 0.000 description 6
- 240000001624 Espostoa lanata Species 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000005086 pumping Methods 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000004534 enameling Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910000833 kovar Inorganic materials 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical compound [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 239000008399 tap water Substances 0.000 description 1
- 235000020679 tap water Nutrition 0.000 description 1
- 238000002076 thermal analysis method Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention relates to a heat dissipation method of a satellite-borne solid-state power amplifier high-power microwave device, which comprises the following specific steps: and (3) selecting a carrier: a semiconductor device is to be welded on a carrier, and a carrier material with the thermal conductivity higher than 440w/mk is selected; processing and surface treatment of carrier materials: processing a carrier material into a large-size plate-shaped structure, ensuring that the depth of pits or indentations on the surface of the carrier is not more than 0.03mm, and the height of burrs or protrusions on the surface is not more than 0.03 mm; plating nickel and silver on the surface of the carrier respectively; and welding the semiconductor device on the carrier, and checking the quality of the welding surface of the carrier assembly by an X-ray machine to ensure that the voidage of the welding surface is not more than 30 percent. The invention selects the carrier material with the thermal conductivity higher than 440w/mk, controls the voidage of the welding surface not more than 30% in the welding process, improves the thermal conductivity on the heat conduction path of the high-power semiconductor microwave device, and reduces the working junction temperature of the semiconductor device.
Description
Technical Field
The invention relates to a heat dissipation method of a satellite-borne solid-state power amplifier high-power microwave device, and belongs to the technical field of heat dissipation of high-power semiconductor devices.
Background
With the continuous development of satellite payload technology, the system also puts many new demands on the solid-state power amplifier. On the whole, with the development of technologies such as navigation, anti-interference, high-power satellite-borne radar and the like, the downlink output power of the satellite load has higher requirements. In the conventional system with relatively simple functions and less repeaters, the output with higher power can be realized by simply increasing the number of power components and combining the power synthesis mode, but the volume and the design complexity of component products are increased along with the power synthesis required by the output.
Disclosure of Invention
The technical problem solved by the invention is as follows: the defects of the prior art are overcome, the heat dissipation method of the satellite-borne solid-state power amplifier high-power microwave device is provided, and the heat dissipation problem of the satellite-borne high-power solid-state power amplifier high-heat-flux semiconductor device is solved.
The technical scheme of the invention is as follows:
a heat dissipation method for a satellite-borne solid-state power amplifier high-power microwave device comprises the following specific steps:
s1: and (3) selecting a carrier: a semiconductor device is to be welded on a carrier, and a carrier material with the thermal conductivity higher than 440w/mk is selected;
s2: processing and surface treatment of carrier materials: processing a carrier material into a large-size plate-shaped structure, ensuring that the depth of pits or indentations on the surface of the carrier is not more than 0.03mm, and the height of burrs or protrusions on the surface is not more than 0.03 mm; plating nickel and silver on the surface of the carrier respectively;
s3: soldering a semiconductor device on a carrier:
s3.1, dissecting and washing a carrier welding surface;
s3.2, pre-tinning of the shell: tin coating is carried out on the welding part of the shell on a hot table by using a welding sheet, so as to ensure that the welding surface is completely covered by the welding flux;
cutting soldering lugs with the same size as the soldering surface, scrubbing the soldering lugs, coating soldering flux on two surfaces, paving the soldering lugs at the welding position of the machine shell, scraping off a layer of oxide film on the surface of the solder by using a tin absorption rope after the soldering lugs are fully melted, and horizontally taking down the machine shell from a heating table for cooling;
s3.3, coating tin on the carrier:
placing the silver-plated substrate on a hot table, cutting soldering lugs with the size equal to that of the welding surface of the carrier, scrubbing the soldering lugs, coating soldering flux on two surfaces of the silver-plated substrate, placing the silver-plated substrate on the soldering lugs, fully rubbing the bottom of the carrier on the silver-plated substrate after the soldering lugs are melted to enable the bottom of the carrier to be uniformly stained with solder, then horizontally pulling out the carrier assembly from the silver-plated substrate along one direction, and cooling the carrier assembly;
s3.4, preparing and welding a welding part:
after the bottom surface of the carrier and the welding surface of the machine shell are coated with the soldering flux, the carrier assembly is placed at the welding position of the machine shell, a workpiece to be welded is placed in a vacuum welding furnace for welding and surface cleaning, and the quality of the welding surface of the carrier assembly is checked through an X-ray machine, so that the voidage of the welding surface is not more than 30%.
Further, the carrier material has a linear thermal expansion coefficient of 6 to 10 ppm/DEG C.
Furthermore, the bending strength of the carrier material is not lower than 300 MPa.
Further, the surface of the carrier is plated with nickel with the thickness of 2.5-11.4 um.
Furthermore, the thickness of silver plating on the nickel layer is more than 7 um.
Furthermore, the size of the soldering lug is 0.05-0.15 mm.
Compared with the prior art, the invention has the beneficial effects that:
the invention selects the carrier material with the thermal conductivity higher than 440w/mk, controls the voidage of the welding surface not more than 30% in the welding process, improves the thermal conductivity on the heat conduction path of the high-power semiconductor microwave device, and reduces the working junction temperature of the semiconductor device.
Drawings
FIG. 1 is a cross-sectional view of a carrier assembly according to the present invention;
FIG. 2 is a graph of the carrier assembly weld voidage of the present invention.
Detailed Description
The invention is further illustrated by the following examples.
A heat dissipation method for a satellite-borne solid-state power amplifier high-power microwave device is shown in figures 1 and 2, and comprises the following specific steps:
s1: and (3) selecting a carrier: the method comprises the following steps of (1) welding a semiconductor device on a carrier, and selecting a carrier material with the thermal conductivity higher than 440w/mk, the linear thermal expansion coefficient between 6 and 10 ppm/DEG C and the bending strength not lower than 300 MPa;
thermal conductivity, coefficient of thermal expansion, material strength, etc. are the main considerations for carrier selection. And combining the thermal analysis result, and ensuring that the working junction temperature of the semiconductor device is lower than the first-level derating value, wherein the thermal conductivity of the carrier material is not lower than 420 w/mk. Meanwhile, the semiconductor device (molybdenum-copper tube shell) needs to be welded on the carrier, and the good thermal expansion matching characteristic is needed between the semiconductor device and the carrier. Based on the consideration, the novel aluminum-diamond composite material is selected, the main components are aluminum matrix and diamond, the thermal conductivity is higher than 440w/mk, the linear thermal expansion coefficient is 6-10 ppm/DEG C, and the bending strength is not lower than 300 MPa.
The advantages of the novel aluminum-diamond composite material compared with the traditional composite material are as follows: compared with the traditional kovar, molybdenum copper and other carriers, the novel aluminum-based diamond composite material has higher thermal conductivity (about 2.4 times of the traditional carrier) and good matching property with a semiconductor device tube shell (molybdenum copper) (the thermal expansion coefficient of the aluminum-based diamond is about 8.5 ppm/DEG C, and the thermal expansion coefficient of the molybdenum copper is about 7.5 ppm/DEG C). Meanwhile, the material has certain advantages in density, the density of the material is about 5g/cm3, the density of the molybdenum-copper carrier is about 9.7g/cm3, and the aluminum-diamond has certain weight advantages when the material is used as a large-size carrier.
The large-size aluminum-diamond composite material is used in a satellite-borne solid-placing single machine for the first time.
S2: processing and surface treatment of carrier materials: processing a carrier material into a large-size plate-shaped structure, ensuring that the depth of pits or indentations on the surface of the carrier is not more than 0.03mm, and the height of burrs or protrusions on the surface is not more than 0.03 mm; the surface of the carrier is plated with nickel with the thickness of 2.5-11.4 um, and the thickness of the silver plated on the nickel layer is more than 7 um;
according to the structural design, the aluminum-diamond carrier material needs to be processed into a large-size plate-shaped structure. In order to meet the application, the carrier material and the coating are strictly controlled, and the specific requirements are as follows: the surface of the metal material has no defects such as defects, scratches, cracks, excess and the like, the depth of pits or indentations on the surface of the metal carrier is not more than 0.03mm, and the height of burrs or protrusions on the surface is not more than 0.03 mm. The surface is processed according to the welding requirement, a nickel-gold plating or silver plating mode is adopted, and the surface of the plating layer is continuous without local bottom exposure and bubble, peeling, stripping or peeling phenomena.
According to the above principle, a plate-like structural carrier material with a thickness of more than 2.5mm and a size of 68mmx52mm was processed. The surface treatment adopts a nickel plating and silver plating method, the thickness of the nickel plating is 2.5-11.4 um, and the thickness of the silver plating is more than 7 um.
S3: soldering a semiconductor device on a carrier:
s3.1, dissecting and washing a carrier welding surface: dissecting and washing the carrier welding surface to make the surface bright, washing with tap water, removing water stain on the surface with clean filter paper, scrubbing the welding surface with absolute ethyl alcohol cotton balls in the same direction, and scrubbing the shell welding surface with absolute ethyl alcohol cotton balls in the same direction;
s3.2, pre-tinning of the shell: tin coating is carried out on the welding part of the shell on a hot table by using a 0.05-0.15mm soldering lug to ensure that the welding surface is fully covered by the solder;
the method comprises the steps of setting the temperature of a hot table to be a proper value (depending on factors such as welding flux, structural parts and the like), enameling tin the welding part of a machine shell by using a 0.1mm soldering lug on the hot table (the selected welding flux is related to the welding temperature of a semiconductor device, the single-machine working environment and the like, In97Ag3 selected for patent welding is the welding flux which is used In a large amount on aerospace products and is mainly based on reliability consideration), scraping the welding flux by using a tin absorbing rope after the welding flux is melted, fully wetting the welding surface of the machine shell by the welding flux (the welding surface is fully covered by the welding flux and has no welding surface exposed outside), and removing excessive welding tin by using the tin absorbing rope after enameling tin. And after the machine shell is cooled, fully scrubbing the soldering tin pre-plated on the welding surface of the machine shell by using an anhydrous alcohol cotton ball.
Cutting a soldering terminal (such as In97Ag3) with a size of 0.1mm equal to the soldering surface, scrubbing the soldering terminal with absolute alcohol cotton ball, coating soldering flux on two surfaces, spreading the soldering terminal on the soldering position of the case, melting the soldering terminal completely, scraping off an oxide film on the surface of the solder with a tin absorption rope, taking the case off the hot table, cooling, and keeping the case horizontal as far as possible without inclination when moving the case.
Cutting soldering lugs with the same size as the soldering surface, scrubbing the soldering lugs, coating soldering flux on two surfaces, paving the soldering lugs at the welding position of the machine shell, scraping off a layer of oxide film on the surface of the solder by using a tin absorption rope after the soldering lugs are fully melted, and horizontally taking down the machine shell from a heating table for cooling;
s3.3, coating tin on the carrier:
placing the silver-plated substrate on a hot table, cutting soldering lugs with the size equal to that of the welding surface of the carrier, scrubbing the soldering lugs, coating soldering flux on two surfaces of the silver-plated substrate, placing the silver-plated substrate on the soldering lugs, fully rubbing the bottom of the carrier on the silver-plated substrate after the soldering lugs are melted to enable the bottom of the carrier to be uniformly stained with solder, then horizontally pulling out the carrier assembly from the silver-plated substrate along one direction, and cooling the carrier assembly;
setting the temperature of a heating table to be a proper value, placing the silver-plated substrate on the heating table, cutting an In97Ag3 soldering lug with the size equal to that of the carrier welding surface by 0.1mm, scrubbing the soldering lug by using an absolute alcohol cotton ball, coating soldering flux on two surfaces of the soldering lug, placing the soldering lug on the silver-plated substrate, fully rubbing the bottom of the carrier on the silver-plated substrate after the soldering lug is melted, and then horizontally pulling the carrier assembly out of the silver-plated substrate along one direction. After the carrier assembly was cooled, the bottom surface of the carrier was thoroughly scrubbed with a cotton ball of anhydrous alcohol.
S3.4, preparing and welding a welding part:
after the bottom surface of the carrier and the welding surface of the machine shell are coated with the soldering flux, the carrier assembly is placed at the welding position of the machine shell, a workpiece to be welded is placed in a vacuum welding furnace for welding and surface cleaning, and the quality of the welding surface of the carrier assembly is checked through an X-ray machine, so that the voidage of the welding surface is not more than 30%.
The curve was plotted using the SRO706 according to the procedure of table 1 and stored for later use on the product. And a special pressing block tool is adopted during welding. The temperature curve of the welding process is related to the shape and the size of the welding equipment and the welded part, and the curve is suitable for the equipment and is equivalent to the welded part in size)
TABLE 1 welding procedure
| Step (ii) of | Procedure | Time | Temperature of | Requiring a temperature of up to (+ -5 ℃ C.) |
| 0 | Vacuum pumping | 2：00 | 25℃ | \ |
| 1 | Charging nitrogen | 1：00 | 25℃ | \ |
| 2 | Vacuum pumping | 2：00 | 25℃ | \ |
| 3 | Charging nitrogen | 1：00 | 25℃ | \ |
| 4 | Heating of | 3：00 | 160℃ | \ |
| 5 | Heating of | 4：30 | 160℃ | About 110 ℃ to about 120 DEG C |
| 6 | Heating of | 1：00 | 215℃ | 145℃ |
| 7 | Vacuum-pumping heating | 3：00 | 215℃ | 170℃ |
| 8 | Charging nitrogen | 0：05 | 200℃ | \ |
| 9 | Rapid cooling | 1：20 | 60℃ | \ |
The carrier material and the process scheme proposed by the patent are verified with the background of a certain model of L-band 200W fixation. The thermal design condition is verified by adopting a thermal balance test, and the test conditions are as follows: the pressure P is less than or equal to 1.3 multiplied by 10 < -3 > Pa, and the temperature is as follows: +55 +/-1 ℃, and reading related data after all temperature points in the single machine reach balance.
As shown in table 2, the solder voiding rate was reduced from 25.27% to 5.43% and 19.84% based on the proposed pre-set tin process recipe, as compared to the conventional solder recipe. Further, the temperature of the working shell of the semiconductor device is reduced from 74.3 ℃ to 70.7 ℃, and is reduced by about 3.6 ℃; the operating junction temperature of the semiconductor device is reduced from 126.3 ℃ to 122.7 ℃ by about 3.6 ℃. For the satellite-borne electronic products, the service life of the satellite-borne electronic products is reduced by half when the temperature rises by 10 ℃, and the good heat dissipation design has great significance for prolonging the service life of the satellite-borne products.
Table 2 comparison of the effects of the conventional heat dissipation method and the heat dissipation method proposed in this patent
| Void fraction | Temperature of the vessel | Junction temperature of device | |
| Welding based on traditional process | 25.27％ | 74.3℃ | 126.3℃ |
| Heat dissipation method proposed by patent | 5.43％ | 70.7℃ | 122.7℃ |
| Improvement of conditions | The reduction is 19.84 percent | Reduce 3.6 DEG C | Reduce 3.6 DEG C |
Compared with the traditional method, the method provided by the invention has the following advantages: compared with the traditional kovar, molybdenum copper and other carriers, the novel aluminum-based diamond composite material has higher thermal conductivity (about 2.7 times of the traditional carrier) and thermal expansion coefficient of about, and has good matching property with a semiconductor device tube shell (molybdenum copper) (the thermal expansion coefficient of aluminum-based diamond is about 6 ppm/DEG C, and the thermal expansion coefficient of molybdenum copper is about 7.5 ppm/DEG C). Meanwhile, the novel aluminum-based diamond composite material also has certain advantages in density, and the density of the novel aluminum-based diamond composite material is about 5g/cm3The density of the molybdenum-copper carrier is about 9.7g/cm3Aluminum diamond has certain weight advantages when used as a large size carrier.
One of the core technical difficulties of high-power solid-state amplification is to solve the heat dissipation problem of a high-power microwave device. A double-path power synthesis scheme is adopted for an L-band 200W solid amplification power circuit part based on a certain model, the heat consumption of a single tube is higher than 50W, and the heat dissipation area is about 29 multiplied by 10mm2The heat flux density is large. In order to ensure that the junction temperature of the power device meets the first-level derating requirement and ensure the easy operability and the repairability of a product, the method adopts the high-thermal-conductivity aluminum-based diamond composite material as a heat dissipation carrier of the semiconductor device and reduces the heat flow density of a high-heat-source area so as to ensure the safe working junction temperature of the semiconductor device. The method is successfully applied to the design of the L-band 200W solid-state product.
Although the present invention has been described with reference to the preferred embodiments, it is not intended to limit the present invention, and those skilled in the art can make variations and modifications of the present invention without departing from the spirit and scope of the present invention by using the methods and technical contents disclosed above.
Claims (6)
1. A heat dissipation method for a satellite-borne solid-state power amplifier high-power microwave device is characterized by comprising the following specific steps:
s1: and (3) selecting a carrier: a semiconductor device is to be welded on a carrier, and a carrier material with the thermal conductivity higher than 440w/mk is selected;
s2: processing and surface treatment of carrier materials: processing a carrier material into a large-size plate-shaped structure, ensuring that the depth of pits or indentations on the surface of the carrier is not more than 0.03mm, and the height of burrs or protrusions on the surface is not more than 0.03 mm; plating nickel and silver on the surface of the carrier respectively;
s3: soldering a semiconductor device on a carrier:
s3.1, dissecting and washing a carrier welding surface;
s3.2, pre-tinning of the shell: tin coating is carried out on the welding part of the shell on a hot table by using a welding sheet, so as to ensure that the welding surface is completely covered by the welding flux;
cutting soldering lugs with the same size as the soldering surface, scrubbing the soldering lugs, coating soldering flux on two surfaces, paving the soldering lugs at the welding position of the machine shell, scraping off a layer of oxide film on the surface of the solder by using a tin absorption rope after the soldering lugs are fully melted, and horizontally taking down the machine shell from a heating table for cooling;
s3.3, coating tin on the carrier:
placing the silver-plated substrate on a hot table, cutting soldering lugs with the size equal to that of the welding surface of the carrier, scrubbing the soldering lugs, coating soldering flux on two surfaces of the silver-plated substrate, placing the silver-plated substrate on the soldering lugs, fully rubbing the bottom of the carrier on the silver-plated substrate after the soldering lugs are melted to enable the bottom of the carrier to be uniformly stained with solder, then horizontally pulling out the carrier assembly from the silver-plated substrate along one direction, and cooling the carrier assembly;
s3.4, preparing and welding a welding part:
after the bottom surface of the carrier and the welding surface of the machine shell are coated with the soldering flux, the carrier assembly is placed at the welding position of the machine shell, a workpiece to be welded is placed in a vacuum welding furnace for welding and surface cleaning, and the quality of the welding surface of the carrier assembly is checked through an X-ray machine, so that the voidage of the welding surface is not more than 30%.
2. The heat dissipation method of the satellite-borne solid-state power amplifier high-power microwave device according to claim 1, wherein the linear thermal expansion coefficient of the carrier material is 6-10 ppm/° C.
3. The heat dissipation method for the satellite-borne solid-state power amplifier high-power microwave device according to claim 1, wherein the bending strength of the carrier material is not lower than 300 MPa.
4. The heat dissipation method of the satellite-borne solid-state power amplifier high-power microwave device according to claim 1, wherein the thickness of nickel plated on the surface of the carrier is 2.5-11.4 um.
5. The heat dissipation method of the satellite-borne solid-state power amplifier high-power microwave device according to claim 4, characterized in that the thickness of silver plating on the nickel layer is more than 7 um.
6. The heat dissipation method for the satellite-borne solid-state power amplifier high-power microwave device according to claim 1, wherein the size of the soldering lug is 0.05-0.15 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110593216.3A CN113539838A (en) | 2021-05-28 | 2021-05-28 | Heat dissipation method for satellite-borne solid-state power amplifier high-power microwave device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110593216.3A CN113539838A (en) | 2021-05-28 | 2021-05-28 | Heat dissipation method for satellite-borne solid-state power amplifier high-power microwave device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113539838A true CN113539838A (en) | 2021-10-22 |
Family
ID=78095470
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110593216.3A Pending CN113539838A (en) | 2021-05-28 | 2021-05-28 | Heat dissipation method for satellite-borne solid-state power amplifier high-power microwave device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113539838A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN205070866U (en) * | 2015-11-14 | 2016-03-02 | 锦州七七七微电子有限责任公司 | Optic fibre control type has brush motor -drive circuit module |
| CN106415822A (en) * | 2014-05-27 | 2017-02-15 | 电化株式会社 | Semiconductor package and method for manufacturing same |
| CN111524821A (en) * | 2020-06-05 | 2020-08-11 | 河北美泰电子科技有限公司 | Eutectic welding platform and eutectic welding method for microwave chip |
-
2021
- 2021-05-28 CN CN202110593216.3A patent/CN113539838A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106415822A (en) * | 2014-05-27 | 2017-02-15 | 电化株式会社 | Semiconductor package and method for manufacturing same |
| CN205070866U (en) * | 2015-11-14 | 2016-03-02 | 锦州七七七微电子有限责任公司 | Optic fibre control type has brush motor -drive circuit module |
| CN111524821A (en) * | 2020-06-05 | 2020-08-11 | 河北美泰电子科技有限公司 | Eutectic welding platform and eutectic welding method for microwave chip |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2911192B1 (en) | Substrate for power module with heat sink, power module with heat sink, and method for producing substrate for power module with heat sink | |
| EP2833398B1 (en) | Power module substrate, and method for manufacturing a power module substrate | |
| CN103934534B (en) | The vacuum welding method of a kind of thick film substrate and power shell | |
| CN106876267B (en) | LTCC substrate assembly and eutectic sintering process method thereof | |
| CN108461380B (en) | Control structure and control method for sintering voidage of large-area integrated circuit chip | |
| CN105977173B (en) | A kind of method of high penetration rate craft eutectic welding semiconductor bare chip | |
| CN110666281B (en) | Brazing welding method for aluminum target and copper-containing back plate | |
| CN112935443A (en) | Welding method of brittle target material | |
| CN109994373B (en) | Micro-assembly bare chip connecting and repairing method | |
| CN107322251A (en) | A kind of production technology of aluminium alloy microchannel heat sink | |
| CN110026669A (en) | A kind of diffusion welding method of magnesium alloy and fine copper or copper alloy | |
| CN106102339A (en) | A kind of surface assembling method of deep cavate microwave components | |
| US20220281035A1 (en) | Solder-metal mesh composite material and method for producing same | |
| CN104588620A (en) | Manufacturing method for tungsten copper mold blocks | |
| CN108188613B (en) | Active solder and preparation method and application thereof | |
| CN113539838A (en) | Heat dissipation method for satellite-borne solid-state power amplifier high-power microwave device | |
| CN113681107A (en) | Welding device for micro-strip plate and substrate and using method | |
| CN101717919B (en) | Manufacture method of target assembly | |
| CN115028467B (en) | Low-void-rate ceramic copper-clad plate and preparation method thereof | |
| JP2014157858A (en) | Semiconductor device manufacturing method | |
| CN114874758A (en) | Novel indium-based efficient heat-conducting gasket | |
| CN115608990A (en) | Welding method of diamond copper composite material for ultrahigh heat conduction microchannel | |
| CN85107155A (en) | The solid-state pressure diffusion welding (DW) of no silver alloy solder sealing-in pottery and Ke watt, pottery and copper | |
| CN111755400B (en) | Radiating element, manufacturing method thereof and IGBT module | |
| CN102254889A (en) | High-power semiconductor device and packaging method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |