CN113532540A - Suspended bridge type MEMS sensing structure - Google Patents
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- CN113532540A CN113532540A CN202110855711.7A CN202110855711A CN113532540A CN 113532540 A CN113532540 A CN 113532540A CN 202110855711 A CN202110855711 A CN 202110855711A CN 113532540 A CN113532540 A CN 113532540A
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- 238000010438 heat treatment Methods 0.000 claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 3
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- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
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- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
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- LELOWRISYMNNSU-UHFFFAOYSA-N hydrogen cyanide Chemical compound N#C LELOWRISYMNNSU-UHFFFAOYSA-N 0.000 description 2
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- 239000011540 sensing material Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
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- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
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- 238000003723 Smelting Methods 0.000 description 1
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- 230000000052 comparative effect Effects 0.000 description 1
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- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D21/00—Measuring or testing not otherwise provided for
- G01D21/02—Measuring two or more variables by means not covered by a single other subclass
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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Abstract
The invention relates to a bridge type MEMS sensing structure, which belongs to the technical field of MEMS detection and is mainly suitable for gas sensors, pressure sensors, microphone sensors and the like. The device comprises two suspended sensor platforms, namely a detection platform and a comparison platform, wherein the two platforms are composed of a supporting beam, a sensing platform, a heating electrode and a sensitive electrode. The sensing platform is supported on a silicon cavity body structure through a supporting beam, the heating electrodes and the sensitive electrodes are distributed on the sensing platform and electrically connected with the outside through the supporting beam, the comparison platform is provided with an adjustable resistor, and the resistance values of the two adjusting platforms are equal. The disclosed sensing structure has the advantages of low cross-talk, strong universality, high stability, low power consumption and the like.
Description
Technical Field
The invention discloses an MEMS sensing structure, relates to the technical field of detection of gas, pressure and the like, and particularly relates to a bridge type MEMS sensing structure.
Background
With the continuous development of social economy, the MEMS sensor is applied to various subjects, relates to various subjects and technologies such as electronics, machinery, materials, physics, chemistry, biology, medicine and the like, and has wide application prospects. Toxic, harmful, flammable and explosive gases such as formaldehyde generated by indoor decoration, cigarette smoke, hydrogen cyanide generated in the combustion of plastic products, hydrogen sulfide generated by sewage treatment and methane tank refueling, carbon monoxide generated by winter coal combustion, nitrogen dioxide and benzene in automobile exhaust, chlorine in metal smelting plants and the like need an MEMS gas sensor to detect the concentration of the gas to be detected; MEMS pressure sensors are needed in automotive electronics for measuring bladder pressure, fuel pressure, engine oil pressure, intake manifold pressure, and tire pressure. It follows that MEMS sensors are a popular research direction in many fields.
The bridge type MEMS sensing structure can be applied to gas sensors, pressure sensors, microphone sensors and the like. A gas sensor is a detection device that converts information such as the composition and concentration of a gas into information that can be used by a worker, an instrument, a computer, or the like. Mainly including electrochemical gas sensors, semiconductor gas sensors, catalytic combustion gas sensors, and thermal conductivity gas sensors. A pressure sensor is a device or apparatus that senses a pressure signal and converts the pressure signal into a usable output electrical signal according to a certain rule. Particularly, with the development of MEMS technology, semiconductor pressure sensors are widely used.
With the widespread application of MEMS sensors, noise interference and increased detection sensitivity become technical difficulties in the field. Therefore, it is desirable to optimize the MEMS platform structure of the MEMS sensor, so that the MEMS sensor can achieve low cost, low power, low interference and mass production while maintaining good sensitivity, selectivity and stability. For example, patent CN 205808982U provides a semiconductor gas sensor chip, which uses a material with good thermal insulation property as a substrate and is fixed on the substrate through a thermal insulation layer to form a semiconductor gas sensor, and although the semiconductor gas sensor chip has a smaller package size and lower power consumption, the semiconductor gas sensor chip has a complicated manufacturing process, which is not suitable for wide popularization. For example, patent CN 102359981 a and patent CN 110040678A are both prepared by using a single sensing platform, and although the structure is easy to integrate, there is noise interference caused by external factors such as temperature, which affects the accuracy of the experimental result and reduces the sensitivity.
Two references are introduced by comparing the structural design of MEMS gas sensors. Reference 1: ying Chen, Pengcheng Xu, Xinxin Li, Yuan Ren, Yonghui Deng, "High-performance H2sensors with selectively hydrophobic micro-plateforself-aligneduploadof Pd nanodots modifiedmesoporous In2O3Sensing-material ", Sensors and actors B Chemical, Volume 267, 15 August 2018, Pages 83-92. A technique for accurately uploading sensing material to a specific area of a micro-sensor of a single sensing platform is disclosed. Reference 2: guokang, Siketu, Zhongguo, Li Tie, "high performance methane sensing based on micro-heater platform", Zhengzhou university proceedings (engineering edition), 2016 (37), 40-42. A Micro Heater Platform (MHP) based methane gas sensor was fabricated using a single sensing platform design. The single sensing platform described in the above two references suffers from the following disadvantages: when the sensing platform reaches the working temperature, the resistance is changed after the sensitive material reacts with the measured gas, and noise generated by environmental factors such as external temperature and the like is superposed into a useful signal, so that the signal-to-noise ratio is low and the sensitivity is poor.
Disclosure of Invention
The present invention is directed to a bridge type MEMS sensing structure to solve the above problems.
In order to achieve the purpose, the invention provides the following technical scheme: the bridge type MEMS sensing structure comprises two suspended sensor platforms, namely a detection platform 1 and a comparison platform 2, wherein the detection platform 1 is provided with two test resistors, namely a first detection resistor 3 and a second detection resistor 4. Two comparison resistors and two adjustable resistors are processed on the comparison platform 2, namely a first comparison resistor 5 and a second comparison resistor 6, and a first adjustable resistor 16 and a second adjustable resistor 17. The detection platform 1 is provided with a heating electrode 18, and the comparison platform 2 is not provided with the heating electrode 18. Ideally, when the heating electrode 18 is heated to the working temperature, the resistances of the first detection resistor 3 and the second detection resistor 4 on the detection platform 1 and the resistances of the first comparison resistor 5 and the second comparison resistor 6 on the comparison platform 2 are equal. If the two platforms are not equal to each other due to errors such as external factors, the resistances of the two platforms are adjusted to be equal by comparing the first adjustable resistor 16 and the second adjustable resistor 17 on the platform 2. When gas reacts with the gas, the resistance values of the first detection resistor 3 and the second detection resistor 4 are changed, the first comparison resistor 4 and the second comparison resistor 5 are not changed, and the concentration information of the gas to be tested can be obtained by measuring the potential difference between the fourth Pad point 10 and the fifth Pad point 11.
The bridge type MEMS sensing structure is divided into two sensing platforms, each platform utilizes 4 cantilever beams 13 to support a working area, and because the sensing platforms are suspended and isolated from the substrate 20, the active area is not in direct contact with the substrate, heat loss caused by heat conduction is reduced, sensor power consumption is greatly reduced, and response speed is improved.
In the bridge type MEMS sensing structure, the structure of the supporting beam 13 is preferably selected from four options, which are divided into two main categories, namely a cross method and a parallel method. Namely, the detection platform 1 and the comparison platform 2 both adopt cross supporting beams; the detection platform 1 and the comparison platform 2 both adopt parallel supporting beams; the detection platform 1 adopts parallel supporting beams, and the comparison platform 2 adopts cross supporting beams; the detection platform 1 adopts a cross supporting beam, and the comparison platform 2 adopts a parallel supporting beam; . The parallel method supporting beam structure is small in size and easy to integrate.
When the bridge type MEMS sensing structure is used for gas sensing, a semiconductor gas-sensitive material on a sensing platform needs to have sufficient adsorption on gas to be detected at a certain temperature, and gas molecules can be fully diffused on the surface (and grain boundary) of the gas-sensitive material to cause the change of the thermal resistance of the material, so that the concentration of the gas to be detected is measured. The original silicon sensing platform is kept by replacing the gas-sensitive material, and gas sensors of different types can be prepared.
The bridge type MEMS sensing structure is different from a traditional single sensing platform, a double sensing platform is adopted in the structure, the idea of a contrast method is introduced into a comparison platform 2, the platform does not have a heating electrode 18 compared with a detection platform 1, when the detection platform 1 reaches the working temperature, the comparison platform 2 is in a room temperature state, at the moment, the resistance values of the two platforms are adjusted to be equal by a first adjustable resistor 16 and a second adjustable resistor 17, accurate information to be detected can be obtained by measuring the potential difference between the two adjustable resistors, the structure can eliminate noise caused by environmental factors such as temperature and the like, and the signal-to-noise ratio is improved.
According to the bridge type MEMS sensing structure, after the temperature of the detection platform 1 is raised, the resistance values of the two platforms may be unequal due to external environmental factors such as temperature, and the resistance values of the two platforms can be guaranteed to be equal by adjusting the first adjustable resistor 16 and the second adjustable resistor 17.
The bridge type MEMS sensing structure adopts double sensing platforms to improve the detection sensitivity of the experiment, and can be used for pressure sensors, microphone sensors and the like.
Drawings
In order that the invention may be more clearly and intuitively understood, the drawings are particularly provided for further detailed description of the invention. And the accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description, serve to explain the invention and not to limit the invention.
Fig. 1 is a schematic diagram of the structural principle of the present invention.
Fig. 2 shows a support beam structure of the invention of type 2.
Fig. 3 shows a 3 rd support beam structure of the present invention.
Fig. 4 shows a support beam structure of the 4 th embodiment of the present invention.
FIG. 5 is a cross-sectional view of a comparative two-stage electrode.
Detailed Description
As shown in fig. 1, the present invention provides a technical solution: the bridge type MEMS sensing structure comprises two suspended sensor platforms, namely a detection platform 1 and a comparison platform 2, each platform utilizes 4 cantilever beams 13 to support a working area, the sensing platform is suspended and isolated from a substrate 20, an active area is not in direct contact with a base, and two test resistors, namely a first detection resistor 3 and a second detection resistor 4, are processed on the detection platform 1. The detection resistors are all tine resistors, and metal wires 14 distributed on the support beam are led out from the detection resistors. Two comparison resistors and two adjustable resistors are processed on the comparison platform, namely a first comparison resistor 5 and a second comparison resistor 6, and a first adjustable resistor 16 and a second adjustable resistor 17. The metal wires 15 arranged on the support beam are led out by the contrast resistors. The detection platform 1 is provided with the heating electrode 18, the comparison platform 2 is not provided with the heating electrode 18, and the first detection resistor 3, the second detection resistor 4, the first comparison resistor 5 and the second comparison resistor 6 are designed to have equal resistance values when the heating electrode 18 is heated to the working temperature. If the difference is not equal, if machining errors occur, the first adjustable resistor 16 and the second adjustable resistor 17 are used for adjusting, so that the resistance values of the two platforms are equal. If the working temperature is set to be 200 ℃, the first detection resistor 3 and the second detection resistor 4 at the temperature of 200 ℃ are equal to the first comparison resistor 5 and the second comparison resistor 6 at the room temperature. The fourth Pad point 10 and the fifth Pad point 11 are provided to prevent short-circuiting so that the two lines are spaced apart. When the structure is applied to a gas sensor, namely when gas reacts with the gas, the resistance values of the first detection resistor 3 and the second detection resistor 4 are changed, the first comparison resistor 5 and the second comparison resistor 6 are not changed, and the concentration information of the gas to be tested can be obtained by measuring the potential difference between the fourth Pad point 10 and the fifth Pad point 11.
As shown in fig. 1-4, the support beam has four different configurations:
FIG. 1 shows that a cross supporting beam 13 is adopted by a detection platform 1 and a comparison platform 2;
FIG. 2 shows that the detection platform 1 and the comparison platform 2 both adopt parallel supporting beams 13;
FIG. 3 shows that the detection platform 1 adopts parallel supporting beams 13, and the comparison platform 2 adopts cross supporting beams 13;
FIG. 4 shows that the detection platform 1 adopts a cross supporting beam 13, and the comparison platform 2 adopts a parallel supporting beam 13;
these four structures are all possible.
As shown in fig. 1 to 4, in order to avoid a large resistance error between the two platform resistors after the temperature of the detection platform 1 is raised, two adjustable resistors, namely a first adjustable resistor 16 and a second adjustable resistor 17, are disposed below the first comparison resistor 5 and the second comparison resistor 6. The adjustable resistor can be selected from laser resistors commonly used in the semiconductor field. When the detection platform 1 reaches the working temperature and the comparison platform 2 is at room temperature, the resistance values of the two platforms are equal in an ideal state, and the adjustable resistance is zero at the moment, namely, one lead is obtained. However, after the temperature is raised, if the first detection resistor 3 and the second detection resistor 4 on the detection platform 1 and the first comparison resistor 5 and the second comparison resistor 6 on the comparison platform 2 have unequal resistance values, the first adjustable resistor 16 and the second adjustable resistor 17 can adjust the resistance values of the first comparison resistor 5 and the second comparison resistor 6, so that the four resistance values of the two platforms are respectively equal, and thus the error is compensated.
As shown in FIG. 5, the detection platform 1 has a heating electrode 18, while the comparison platform 2 has no heating electrode 18, and both platforms have a sensing electrode 19. The resistance of the detection resistor on the detection platform 1 is equal to the resistance of the comparison resistor at room temperature of the comparison platform 2 when the working temperature is designed, so that the heating process on the comparison platform is avoided, and the power consumption is reduced.
In summary, the bridge-based MEMS sensing structure disclosed in the present invention eliminates noise influence caused by external environment by setting two sensing platforms for data comparison. The precision rate and the sensitivity of the MEMS sensing detection structure are improved. Therefore, the bridge type MEMS sensing structure realizes the real-time detection with high sensitivity and high stability.
The embodiments of the invention shown and described above are intended to be used as examples only, and the scope of protection of the patent is not limited thereto. Various modifications and alterations to these embodiments will become apparent to those skilled in the art without departing from the spirit and scope of this invention, and such modifications are to be considered within the scope of this invention. Therefore, the protection scope of the present invention should be subject to the appended claims.
Claims (6)
1. Based on bridge type MEMS sensing structure, its characterized in that: the bridge type MEMS sensing structure is formed by combining two suspended sensing platforms which are respectively a detection platform (1) and a comparison platform (2), wherein each platform supports a suspended structure sensing platform above a silicon cavity (12) by four supporting beams (13), two detection resistors (3, 4) are processed on the detection platform (1), two comparison resistors (5, 6) and two adjustable resistors (16, 17) are processed on the comparison platform, a heating electrode (18) is processed on the detection platform, the comparison platform does not have the heating electrode (18), when the heating electrode (18) is heated to the working temperature, if the resistance values of the two platforms are not equal due to the temperature influence, the resistance values of the comparison resistors (5, 6) and the detection resistors (3, 4) are equal under the compensation of the adjustable resistors (16, 17) through the adjustable resistors (16, 17) on the comparison platform (2), when the sensing platform reacts, the resistance values of the first detection resistor (3) and the second detection resistor (4) are changed, the resistance values of the first comparison resistor (5) and the second comparison resistor (6) are not changed, and the information of the object to be detected can be obtained by measuring the potential difference between the fourth Pad point (10) and the fifth Pad point (11).
2. The bridge-based MEMS sensing structure of claim 1, wherein: the structure adopts double sensing platforms, the resistance values of the two resistors are equal to the resistance values of the two resistors when the detection platform (1) reaches the working temperature and the resistance values of the two resistors when the comparison platform (2) is at room temperature, the resistance value of the object to be detected in the platform to be detected is changed, and the information of the object to be detected can be obtained by measuring the potential difference between the two platforms.
3. The bridge-based MEMS sensing structure of claim 1, wherein: the supporting beam (13) is suspended above the base, and the two sensing platforms are both in a suspended structure.
4. The bridge-based MEMS sensing structure of claim 1, wherein: the structure is added with adjustable resistors (16, 17) on a comparison platform (2).
5. The bridge-based MEMS sensing structure of claim 1, wherein: the structure detection platform (1) is provided with a heating electrode (18), and the comparison platform (2) is not provided with the heating electrode (18).
6. The bridge-based MEMS sensing structure of claim 1, wherein: when the structure is at the working temperature, the first detection resistor (3) and the second detection resistor (4) on the detection platform, the sum of the first comparison resistor (5) and the first adjustable resistor (16) on the comparison platform, and the sum of the second comparison resistor (6) and the second adjustable resistor (17) are equal in resistance.
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| CN213813431U (en) * | 2020-11-27 | 2021-07-27 | 广州奥松电子有限公司 | MEMS humidity sensor |
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- 2021-07-28 CN CN202110855711.7A patent/CN113532540B/en active Active
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| CN110494743A (en) * | 2017-04-11 | 2019-11-22 | 应美盛公司 | Gas sensing method and device |
| CN107830967A (en) * | 2017-10-31 | 2018-03-23 | 无锡职业技术学院 | A kind of MEMS air differential pressures sensor |
| CN108181350A (en) * | 2017-12-29 | 2018-06-19 | 中国矿业大学 | The resistors match method of adjustment of MEMS methane transducers |
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