CN113529019A - Method for preparing super-hard bionic AR sheet by utilizing multi-arc ion plating and magnetron sputtering plating - Google Patents
Method for preparing super-hard bionic AR sheet by utilizing multi-arc ion plating and magnetron sputtering plating Download PDFInfo
- Publication number
- CN113529019A CN113529019A CN202110826699.7A CN202110826699A CN113529019A CN 113529019 A CN113529019 A CN 113529019A CN 202110826699 A CN202110826699 A CN 202110826699A CN 113529019 A CN113529019 A CN 113529019A
- Authority
- CN
- China
- Prior art keywords
- steps
- following
- magnetron sputtering
- arc ion
- bionic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
Abstract
The invention relates to the technical field of AR, in particular to a method for preparing a superhard bionic AR sheet by utilizing multi-arc ion plating and magnetron sputtering plating, which comprises the following steps: step 1, cleaning and drying a substrate; step 2, adopting multi-arc ion plating, forming liquid drops by rapidly evaporating a silicon target during arc discharge, and depositing the liquid drops on the surface of a substrate under the action of an electric field to form silicon nano mastoid with the thickness of 0.5-3 microns; and 3, plating a silicon optical film by magnetron sputtering, wherein the thickness of the optical film is within 300 nanometers, so that the super-hard bionic AR sheet is obtained.
Description
Technical Field
The invention relates to the technical field of AR, in particular to a method for preparing a super-hard bionic AR sheet by utilizing multi-arc ion plating and magnetron sputtering plating.
Background
The 3D bionic imaging technology is a display mode of optical imaging, and utilizes holographic glass or holographic film to obtain a picture with strong stereoscopic impression by means of refraction, scattering and even diffraction of light.
The AR combines virtual things with real scenes through field real scenes and is combined with computer software to be synchronously displayed on a large screen, but the existing bionic AR technology on the market is generally realized by adopting a nano-imprinting technology, the process is complex, the cost is high, the larger the size is, the higher the cost is, and the AR is not suitable for 3D modeling.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention aims to provide a method for preparing a super-hard bionic AR sheet by utilizing multi-arc ion plating and magnetron sputtering plating, which has simple process and low cost.
The purpose of the invention is realized by the following technical scheme: a method for preparing a super-hard bionic AR sheet by utilizing multi-arc ion plating and magnetron sputtering plating comprises the following steps:
and 3, carrying out magnetron sputtering on a silicon-plated optical film, wherein the thickness of the optical film is within 300 nanometers, and thus obtaining the super-hard bionic AR sheet.
And 2, the nano mastoids are periodically arranged nano mastoids, and the nano mastoids are cones, cylinders or trapezoidal columns.
The diameter of the droplets in step 2 was controlled to 1 um. Because the current liquid drop can only be controlled to be about 1um, the visible light transmittance is lost to a certain extent, and the magnetron sputtering optical film is added for making up.
The cleaning is carried out for 5-10 minutes by adopting a sodium carbonate solution with the mass concentration of 5% and the temperature of 60-70 ℃.
The multi-arc ion plating of the step 2 comprises the following specific steps:
firstly, the method comprises the following steps: installing a substrate on a substrate table of multi-arc ion plating equipment as an anode, and installing a silicon target into a multi-arc ion plating arc head as a cathode; pumping the vacuum degree to 2 x 10 < -3 > to 8 x 10 < -4 > Pa, and introducing argon to stabilize the pressure in the multi-arc ion plating within the range of 0.2 to 0.8 Pa;
secondly, the method comprises the following steps: preheating the base material to 200-500 ℃; the discharge voltage is 15V-20V, the current is 50A-80A, and the deposition rate is 3-5 mu m/min; the deposition time of the liquid drops under the condition is 5-15 minutes;
thirdly, the method comprises the following steps: and (3) performing high-temperature diffusion treatment at 1100-1250 ℃ on the base material deposited with the liquid drops, wherein the diffusion time is 10-60 min, and thus forming the nano mastoid.
The magnetron sputtering plating in the step 3 comprises the following specific steps:
firstly, the method comprises the following steps: mounting a substrate on an anode plate of a magnetron sputtering instrument; then putting the silicon target into a magnetron sputtering instrument as a cathode; the vacuum degree is reduced to 10-2～10-3After Pa, introducing argon to stabilize the pressure in the magnetron sputtering instrument within the range of 1-10 Pa;
secondly, the method comprises the following steps: preheating the base material to 500-800 ℃; the discharge voltage is 280V-350V, the current is 0.2A-0.6A, the deposition rate is 0.5-1.2 mu m/min, and the surface silicon film deposition is carried out under the condition;
thirdly, the method comprises the following steps: and (3) performing high-temperature diffusion at 1000-1250 ℃ for 5-60 min to obtain the super-hard bionic AR sheet.
The invention has the beneficial effects that: the invention adopts the method of combining multi-arc ion plating and magnetron sputtering plating to prepare the super-hard bionic AR sheet, can realize the bionic anti-reflection effect of the structure, can realize mass production, has low cost and can realize 3D modeling.
Drawings
Fig. 1 is a schematic structural view of the present invention.
The reference signs are: 1-silicon optical film, 2-silicon nano mastoid and 3-substrate.
Detailed Description
For the understanding of those skilled in the art, the present invention will be further described with reference to the following examples and the accompanying fig. 1, and the description of the embodiments is not intended to limit the present invention.
Example 1
A method for preparing a super-hard bionic AR sheet by utilizing multi-arc ion plating and magnetron sputtering plating comprises the following steps:
and 3, carrying out magnetron sputtering on the silicon-plated optical film 1, wherein the thickness of the optical film is within 300 nanometers, and thus obtaining the super-hard bionic AR sheet.
And 2, the nano mastoids are periodically arranged nano mastoids, and the nano mastoids are cones, cylinders or trapezoidal columns.
The diameter of the droplets in step 2 was controlled to 1 um.
The cleaning is carried out for 10 minutes by adopting a sodium carbonate solution with the mass concentration of 5% and the temperature of 60 ℃.
The multi-arc ion plating of the step 2 comprises the following specific steps:
firstly, the method comprises the following steps: installing a substrate 3 on a substrate 3 table of multi-arc ion plating equipment as an anode, and installing a silicon target into a multi-arc ion plating arc head as a cathode; vacuum degree is pumped to 2 x 10-3After Pa, introducing argon to stabilize the pressure in the multi-arc ion plating within the range of 0.2 Pa;
secondly, the method comprises the following steps: preheating the substrate to 200 ℃; the discharge voltage is 20V, the current is 80A, and the deposition rate is 3 mu m/min; deposition time of the droplets under these conditions was 15 minutes;
thirdly, the method comprises the following steps: and (3) performing high-temperature diffusion treatment at 1100 ℃ on the base material deposited with the liquid drops for 60min to form the nano mastoid.
The magnetron sputtering plating in the step 3 comprises the following specific steps:
firstly, the method comprises the following steps: mounting a substrate 3 on an anode plate of a magnetron sputtering instrument; then putting the silicon target into a magnetron sputtering instrument as a cathode; the vacuum degree is reduced to 10-2After Pa, introducing argon to stabilize the pressure in the magnetron sputtering instrument within the range of 1 Pa;
secondly, the method comprises the following steps: preheating the base material to 500 ℃; the discharge voltage is 350V, the current is 0.2A, the deposition rate is 0.5 mu m/min, and the surface silicon film deposition is carried out under the condition;
thirdly, the method comprises the following steps: and (4) performing high-temperature diffusion at 1000 ℃ for 60min to obtain the super-hard bionic AR sheet.
Example 2
A method for preparing a super-hard bionic AR sheet by utilizing multi-arc ion plating and magnetron sputtering plating comprises the following steps:
and 3, carrying out magnetron sputtering on the silicon-plated optical film 1, wherein the thickness of the optical film is within 300 nanometers, and thus obtaining the super-hard bionic AR sheet.
And 2, the nano mastoids are periodically arranged nano mastoids, and the nano mastoids are cones, cylinders or trapezoidal columns.
The diameter of the droplets in step 2 was controlled to 1 um.
The cleaning is carried out by adopting a sodium carbonate solution with the mass concentration of 5% and the temperature of 65 ℃ for 8 minutes.
The multi-arc ion plating of the step 2 comprises the following specific steps:
firstly, the method comprises the following steps: installing a substrate 3 on a substrate 3 table of multi-arc ion plating equipment as an anode, and installing a silicon target into a multi-arc ion plating arc head as a cathode; vacuum degree is pumped to 1 × 10-3After Pa, introducing argon to stabilize the pressure in the multi-arc ion plating within the range of 0.6 Pa;
secondly, the method comprises the following steps: preheating the base material to 350 ℃; the discharge voltage is 16V, the current is 60A, and the deposition rate is 4 mu m/min; deposition time of the droplets under these conditions was 12 minutes;
thirdly, the method comprises the following steps: and (3) performing high-temperature diffusion treatment at 1200 ℃ on the base material deposited with the liquid drops for 40min to form the nano mastoid.
The magnetron sputtering plating in the step 3 comprises the following specific steps:
firstly, the method comprises the following steps: mounting a substrate 3 on an anode plate of a magnetron sputtering instrument; then putting the silicon target into a magnetron sputtering instrument as a cathode; vacuum degree is pumped to 5 × 10-3After Pa, introducing argon to stabilize the pressure in the magnetron sputtering instrument within the range of 4 Pa;
secondly, the method comprises the following steps: preheating the base material to 700 ℃; the discharge voltage is 300V, the current is 0.4A, the deposition rate is 1.1 mu m/min, and the surface silicon film deposition is carried out under the condition;
thirdly, the method comprises the following steps: and (4) carrying out high-temperature diffusion at 1150 ℃ for 40min to obtain the super-hard bionic AR sheet.
Example 3
A method for preparing a super-hard bionic AR sheet by utilizing multi-arc ion plating and magnetron sputtering plating comprises the following steps:
and 3, carrying out magnetron sputtering on the silicon-plated optical film 1, wherein the thickness of the optical film is within 300 nanometers, and thus obtaining the super-hard bionic AR sheet.
And 2, the nano mastoids are periodically arranged nano mastoids, and the nano mastoids are cones, cylinders or trapezoidal columns.
The diameter of the droplets in step 2 was controlled to 1 um.
The cleaning is carried out for 5 minutes by adopting a sodium carbonate solution with the mass concentration of 5% and the temperature of 70 ℃.
The multi-arc ion plating of the step 2 comprises the following specific steps:
firstly, the method comprises the following steps: installing a substrate 3 on a substrate 3 table of multi-arc ion plating equipment as an anode, and installing a silicon target into a multi-arc ion plating arc head as a cathode; after the vacuum degree is pumped to 8 multiplied by 10 < -4 > Pa, argon is introduced to stabilize the pressure in the multi-arc ion plating within the range of 0.8 Pa;
secondly, the method comprises the following steps: preheating the base material to 500 ℃; the discharge voltage is 15V, the current is 80A, and the deposition rate is 5 mu m/min; deposition time of the droplets under these conditions was 5 minutes;
thirdly, the method comprises the following steps: and (3) carrying out 1250 ℃ high-temperature diffusion treatment on the base material deposited with the liquid drops for 10min to form the nano mastoid.
The magnetron sputtering plating in the step 3 comprises the following specific steps:
firstly, the method comprises the following steps: mounting a substrate 3 on an anode plate of a magnetron sputtering instrument; then putting the silicon target into a magnetron sputtering instrument as a cathode; the vacuum degree is reduced to 10-3After Pa, introducing argon to stabilize the pressure in the magnetron sputtering instrument within the range of 10 Pa;
secondly, the method comprises the following steps: preheating a base material to 800 ℃; the discharge voltage is 350V, the current is 0.2A, the deposition rate is 1.2 mu m/min, and the surface silicon film deposition is carried out under the condition;
thirdly, the method comprises the following steps: and (3) carrying out 1250 ℃ high-temperature diffusion for 5min to obtain the super-hard bionic AR sheet.
The bionic anti-reflection effect of the structure can be achieved, mass production can be achieved, the cost is low, and 3D modeling can be achieved.
The above-described embodiments are preferred implementations of the present invention, and the present invention may be implemented in other ways without departing from the spirit of the present invention.
Claims (7)
1. A method for preparing a super-hard bionic AR sheet by utilizing multi-arc ion plating and magnetron sputtering plating is characterized by comprising the following steps: it comprises the following steps:
step 1, cleaning and drying a substrate;
step 2, adopting multi-arc ion plating, forming liquid drops by rapidly evaporating a silicon target during arc discharge, and depositing the liquid drops on the surface of a substrate under the action of an electric field to form silicon nano mastoid with the thickness of 0.5-3 microns;
and 3, carrying out magnetron sputtering on a silicon-plated optical film, wherein the thickness of the optical film is within 300 nanometers, and thus obtaining the super-hard bionic AR sheet.
2. The method for preparing the super-hard bionic AR sheet by using the multi-arc ion plating and the magnetron sputtering plating according to claim 1, wherein the method comprises the following steps: step 1, the substrate is glass or sapphire.
3. The method for preparing the super-hard bionic AR sheet by using the multi-arc ion plating and the magnetron sputtering plating according to claim 1, wherein the method comprises the following steps: and 2, the nano mastoids are periodically arranged nano mastoids, and the nano mastoids are cones, cylinders or trapezoidal columns.
4. The method for preparing the super-hard bionic AR sheet by using the multi-arc ion plating and the magnetron sputtering plating according to claim 1, wherein the method comprises the following steps: the diameter of the droplets in step 2 was controlled to 1 um.
5. The method for preparing the super-hard bionic AR sheet by using the multi-arc ion plating and the magnetron sputtering plating according to claim 1, wherein the method comprises the following steps: the cleaning is carried out for 5-10 minutes by adopting a sodium carbonate solution with the mass concentration of 5% and the temperature of 60-70 ℃.
6. The method for preparing the super-hard bionic AR sheet by using the multi-arc ion plating and the magnetron sputtering plating according to claim 1, wherein the method comprises the following steps: the multi-arc ion plating of the step 2 comprises the following specific steps:
firstly, the method comprises the following steps: installing a substrate on a substrate table of multi-arc ion plating equipment as an anode, and installing a silicon target into a multi-arc ion plating arc head as a cathode; pumping the vacuum degree to 2 x 10 < -3 > to 8 x 10 < -4 > Pa, and introducing argon to stabilize the pressure in the multi-arc ion plating within the range of 0.2 to 0.8 Pa;
secondly, the method comprises the following steps: preheating the base material to 200-500 ℃; the discharge voltage is 15V-20V, the current is 50A-80A, and the deposition rate is 3-5 mu m/min; the deposition time of the liquid drops under the condition is 5-15 minutes;
thirdly, the method comprises the following steps: and (3) performing high-temperature diffusion treatment at 1100-1250 ℃ on the base material deposited with the liquid drops, wherein the diffusion time is 10-60 min, and thus forming the nano mastoid.
7. The method for preparing the super-hard bionic AR sheet by using the multi-arc ion plating and the magnetron sputtering plating according to claim 1, wherein the method comprises the following steps: the magnetron sputtering plating in the step 3 comprises the following specific steps:
firstly, the method comprises the following steps: mounting a substrate on an anode plate of a magnetron sputtering instrument; then putting the silicon target into a magnetron sputtering instrument as a cathode; the vacuum degree is reduced to 10-2～10-3After Pa, introducing argon to stabilize the pressure in the magnetron sputtering instrument within the range of 1-10 Pa;
secondly, the method comprises the following steps: preheating the base material to 500-800 ℃; the discharge voltage is 280V-350V, the current is 0.2A-0.6A, the deposition rate is 0.5-1.2 mu m/min, and the surface silicon film deposition is carried out under the condition;
thirdly, the method comprises the following steps: and (3) performing high-temperature diffusion at 1000-1250 ℃ for 5-60 min to obtain the super-hard bionic AR sheet.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110826699.7A CN113529019B (en) | 2021-07-21 | 2021-07-21 | Method for preparing superhard bionic AR (AR) sheet by utilizing multi-arc ion plating and magnetron sputtering plating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110826699.7A CN113529019B (en) | 2021-07-21 | 2021-07-21 | Method for preparing superhard bionic AR (AR) sheet by utilizing multi-arc ion plating and magnetron sputtering plating |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113529019A true CN113529019A (en) | 2021-10-22 |
| CN113529019B CN113529019B (en) | 2023-08-15 |
Family
ID=78129169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110826699.7A Active CN113529019B (en) | 2021-07-21 | 2021-07-21 | Method for preparing superhard bionic AR (AR) sheet by utilizing multi-arc ion plating and magnetron sputtering plating |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113529019B (en) |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2066030U (en) * | 1989-06-15 | 1990-11-21 | 北京市爱达星实业公司 | Plasma body evaporating device in multi sphere ion plating technology |
| JP2000150500A (en) * | 1998-11-10 | 2000-05-30 | Nissin Electric Co Ltd | Method of forming silicon system thin film |
| JP2004087888A (en) * | 2002-08-28 | 2004-03-18 | Nippon Telegr & Teleph Corp <Ntt> | Method for forming hemispherical silicon microcrystal |
| US20070056846A1 (en) * | 2005-09-13 | 2007-03-15 | Nissin Electric Co., Ltd. | Silicon dot forming method and silicon dot forming apparatus |
| US20070063183A1 (en) * | 2005-09-20 | 2007-03-22 | Nissin Electric Co., Ltd. | Substrate having silicon dots |
| US20070158182A1 (en) * | 2005-09-26 | 2007-07-12 | Nissin Electric Co., Ltd. | Silicon dot forming method and apparatus |
| CN102096316A (en) * | 2010-12-22 | 2011-06-15 | 中国科学院光电技术研究所 | Method for improving super-diffraction lithographic resolution and lithographic quality by utilizing island-type structure mask |
| CN103969941A (en) * | 2014-05-26 | 2014-08-06 | 苏州大学 | Mask as well as preparation method and graphing method thereof |
| CN107024729A (en) * | 2016-02-01 | 2017-08-08 | 佳能株式会社 | The manufacture method of anti-reflective film, optical component and optical component |
| CN107910383A (en) * | 2017-10-09 | 2018-04-13 | 华南师范大学 | A kind of preparation method of metal net shaped conducting film |
| CN112813389A (en) * | 2019-11-18 | 2021-05-18 | 河北召飞科技服务有限公司 | Method for reducing large liquid drops in multi-arc ion plating process |
-
2021
- 2021-07-21 CN CN202110826699.7A patent/CN113529019B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2066030U (en) * | 1989-06-15 | 1990-11-21 | 北京市爱达星实业公司 | Plasma body evaporating device in multi sphere ion plating technology |
| JP2000150500A (en) * | 1998-11-10 | 2000-05-30 | Nissin Electric Co Ltd | Method of forming silicon system thin film |
| JP2004087888A (en) * | 2002-08-28 | 2004-03-18 | Nippon Telegr & Teleph Corp <Ntt> | Method for forming hemispherical silicon microcrystal |
| US20070056846A1 (en) * | 2005-09-13 | 2007-03-15 | Nissin Electric Co., Ltd. | Silicon dot forming method and silicon dot forming apparatus |
| US20070063183A1 (en) * | 2005-09-20 | 2007-03-22 | Nissin Electric Co., Ltd. | Substrate having silicon dots |
| US20070158182A1 (en) * | 2005-09-26 | 2007-07-12 | Nissin Electric Co., Ltd. | Silicon dot forming method and apparatus |
| CN102096316A (en) * | 2010-12-22 | 2011-06-15 | 中国科学院光电技术研究所 | Method for improving super-diffraction lithographic resolution and lithographic quality by utilizing island-type structure mask |
| CN103969941A (en) * | 2014-05-26 | 2014-08-06 | 苏州大学 | Mask as well as preparation method and graphing method thereof |
| CN107024729A (en) * | 2016-02-01 | 2017-08-08 | 佳能株式会社 | The manufacture method of anti-reflective film, optical component and optical component |
| CN107910383A (en) * | 2017-10-09 | 2018-04-13 | 华南师范大学 | A kind of preparation method of metal net shaped conducting film |
| CN112813389A (en) * | 2019-11-18 | 2021-05-18 | 河北召飞科技服务有限公司 | Method for reducing large liquid drops in multi-arc ion plating process |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113529019B (en) | 2023-08-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102707504A (en) | Liquid crystal display panel, method for producing same and display device | |
| CN102719803A (en) | Method for preparing and transferring graphene transparent film | |
| CN101806974A (en) | Colorful film substrate, manufacture method thereof and liquid crystal display panel | |
| CN103872089A (en) | Display panel, preparation method thereof and display device | |
| TW418417B (en) | Patterned ion-bombarded graphite electron emitters | |
| CN113529019B (en) | Method for preparing superhard bionic AR (AR) sheet by utilizing multi-arc ion plating and magnetron sputtering plating | |
| CN109267009B (en) | Preparation method of low-temperature-resistant high-resistivity ITO conductive film | |
| CN102690066A (en) | Fixing method of glass substrate | |
| CN103018978B (en) | A kind of liquid crystal panel and display device | |
| CN110818404A (en) | Novel preparation method of high-density ITO target | |
| JP2008117778A (en) | Method of manufacturing field emission element | |
| CN102262994B (en) | Oxide-nano-structure-based surface-conduction electron emission source and manufacturing method thereof | |
| JP3457199B2 (en) | Method for manufacturing plasma display panel | |
| CN103060761A (en) | Sputter coating device for generating transparent conductive thin film on graphene film | |
| CN109298578A (en) | A kind of compound electrochomeric glass and its processing method | |
| CN101937821B (en) | Fluorescent screen of vacuum equipment and non-adhesive manufacturing method for fluorescent screen | |
| CN1206697C (en) | Micro grating for transmissive electron microscope and its making process | |
| CN106119971A (en) | The preparation of a kind of organic-inorganic perovskite spike crystal and application thereof | |
| CN101556894A (en) | Field emission display module for super-large spliced display screen and preparation method thereof | |
| CN101681755A (en) | Method for manufacturing plasma display panel | |
| CN107164726A (en) | A kind of OLED evaporations mask plate and preparation method | |
| KR100513494B1 (en) | Method for forming electrode in plasma display panel | |
| CN103021762A (en) | Method for processing field emission cathode | |
| CN109188770B (en) | Backlight source module and liquid crystal display thereof | |
| CN218647648U (en) | Double-sided ITO copper conductive film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |