CN113522895A - Pipeline flushing method and device - Google Patents
Pipeline flushing method and device Download PDFInfo
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- CN113522895A CN113522895A CN202110816301.1A CN202110816301A CN113522895A CN 113522895 A CN113522895 A CN 113522895A CN 202110816301 A CN202110816301 A CN 202110816301A CN 113522895 A CN113522895 A CN 113522895A
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- Prior art keywords
- thickness
- scouring
- deposition layer
- flushing
- condition
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/02—Cleaning pipes or tubes or systems of pipes or tubes
- B08B9/027—Cleaning the internal surfaces; Removal of blockages
- B08B9/032—Cleaning the internal surfaces; Removal of blockages by the mechanical action of a moving fluid, e.g. by flushing
- B08B9/0321—Cleaning the internal surfaces; Removal of blockages by the mechanical action of a moving fluid, e.g. by flushing using pressurised, pulsating or purging fluid
- B08B9/0325—Control mechanisms therefor
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
- F16L55/00—Devices or appurtenances for use in, or in connection with, pipes or pipe systems
- F16L55/24—Preventing accumulation of dirt or other matter in the pipes, e.g. by traps, by strainers
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F17—STORING OR DISTRIBUTING GASES OR LIQUIDS
- F17D—PIPE-LINE SYSTEMS; PIPE-LINES
- F17D5/00—Protection or supervision of installations
Abstract
The embodiment of the invention provides a pipeline flushing method and a pipeline flushing device, and relates to the field of environmental management. The method comprises the following steps: the method comprises the steps of obtaining the thickness of a deposition layer in a pipeline, obtaining a scouring condition according to the corresponding relation between the thickness of the deposition layer and the scouring condition, wherein the scouring condition corresponding to the thickness of the deposition layer is a condition for damaging the thickness of a corresponding deposition layer in a preset proportion with minimum power consumption, and controlling water flow to scour the deposition layer in the pipeline according to the scouring condition. The embodiment of the invention is used for solving the problems of complexity and high cost when harmful substances generated by microbial metabolism in a pipeline are treated by the conventional treatment method.
Description
Technical Field
The invention relates to the field of environmental management, in particular to a pipeline flushing method and a pipeline flushing device.
Background
The urban sewage pipeline is generally subjected to a sedimentation phenomenon, sediments contain a large amount of organic substances, the space of the sewage pipeline is relatively closed, the air circulation is poor, an anaerobic environment is easily formed, and a material basis and an environment basis are provided for the metabolic activities of methanogens, sulfate reducing bacteria and the like in the sediments.
Under anaerobic environment, methanogens and the like can generate harmful gases such as methane and the like through metabolic activities, Sulfate Reducing Bacteria (SRB) and the like can generate harmful gases such as hydrogen sulfide and the like through metabolic activities, if the harmful gases are not properly treated, gas accumulation can be caused, leakage can be caused after the gases reach a certain concentration, personnel poisoning can be caused, even accidents such as explosion and the like can be caused when naked fire happens, and when the total concentration of sulfides in sewage is 2.0mg/L, a drainage pipeline can be seriously corroded. In the prior art, in order to avoid the accidents, the generated methane, hydrogen sulfide gas and the like are converted into other substances through chemical reaction by some chemical means, so as to achieve the purpose of harmless treatment.
Disclosure of Invention
Based on the above, the invention provides a pipeline flushing method and a pipeline flushing device, which are used for solving the problems of complexity and high cost of a method for treating harmful substances generated by microbial metabolism in a pipeline in the prior art.
In order to achieve the above purpose, the technical solutions provided by the embodiments of the present invention are as follows:
in a first aspect, an embodiment of the present invention provides a method for flushing a pipeline, where the method includes:
acquiring the thickness of a deposition layer, wherein the thickness of the deposition layer is the thickness of the deposition layer in the pipeline;
obtaining a scouring condition according to the thickness of the deposition layer and a preset corresponding relation, wherein the preset corresponding relation comprises the following steps: the corresponding relation between the thickness of the deposition layer and the scouring condition, wherein the scouring condition corresponding to the thickness of the deposition layer is a condition for damaging the thickness of the corresponding deposition layer in a preset proportion by using minimum power consumption;
and controlling water flow to flush the settled layer in the pipeline according to the flushing condition.
As an optional implementation manner of the embodiment of the present invention, the flush condition includes:
the method comprises the following steps of flushing flow rate and flushing duration, wherein the flushing duration is the time from the beginning of flushing the sedimentary deposit corresponding to the thickness of the sedimentary deposit to the destruction of the thickness of the sedimentary deposit according to the preset proportion by the aid of the flushing flow rate.
As an optional implementation manner of the embodiment of the present invention, the preset corresponding relationship includes: the corresponding relation between each thickness interval and the scouring condition;
obtaining a scouring condition according to the thickness of the deposition layer and a preset corresponding relation, wherein the scouring condition comprises the following steps:
obtaining a thickness interval to which the thickness of the deposition layer belongs;
and acquiring the scouring condition corresponding to the settled layer with the settled layer thickness according to the thickness interval and the preset corresponding relation.
As an optional implementation manner of the embodiment of the present invention, before obtaining the flushing condition according to the thickness of the deposition layer and the preset corresponding relationship, the method further includes:
establishing preset scouring conditions of a plurality of scouring schemes, wherein the thicknesses of the sedimentary layers in the scouring schemes are different, and the scouring flow rates of water flow for scouring the sedimentary layers corresponding to the thicknesses of the sedimentary layers under the preset scouring conditions of the scouring schemes are different;
calculating energy consumption required by preset scouring conditions of each scouring scheme;
and determining the flushing conditions corresponding to each flushing scheme based on the energy consumption, wherein the flushing conditions are preset flushing conditions with the minimum energy consumption under the flushing scheme.
As an optional implementation manner of the embodiment of the present invention, the correspondence between each thickness interval and the flushing condition includes:
if the thickness of the deposition layer belongs to a thickness interval [0, 3cm ], the corresponding scouring flow rate is 0.4m/s, and the scouring time is 4 minutes;
if the thickness of the deposition layer belongs to a thickness interval (3cm, 6 cm), the corresponding scouring flow rate is 0.6m/s, and the scouring time is 6 minutes;
if the thickness of the deposition layer belongs to a thickness interval (6cm, 10 cm), the corresponding scouring flow rate is 0.7m/s, and the scouring time is 10 minutes;
and if the thickness of the deposition layer is greater than or equal to 10cm, the corresponding flushing flow rate is 0.8m/s, and the flushing time is 13 minutes.
As an optional implementation manner of the embodiment of the present invention, the obtaining the thickness of the deposition layer includes:
and acquiring the thickness of the deposition layer in the pipeline by a sonar detector.
As an optional implementation manner of the embodiment of the present invention, the acquiring, by a sonar detector, the thickness of the deposition layer in the pipeline includes:
acquiring the thickness of the deposition layers at a plurality of positions in the pipeline through a sonar detector;
calculating an average of the deposit layer thicknesses at the plurality of locations as the deposit layer thickness in the pipe.
As an optional implementation manner of the embodiment of the present invention, the sonar detector is disposed on the telescopic rod, and the acquiring thicknesses of the deposition layers at multiple positions in the pipeline by the sonar detector includes:
the thickness of the deposition layers at multiple positions in the pipeline is obtained by the sonar detector by adjusting the length of the telescopic rod.
In a second aspect, an embodiment of the present invention provides a pipeline flushing device, including:
the detection module is used for acquiring the thickness of a deposition layer, wherein the thickness of the deposition layer is the thickness of the deposition layer in the pipeline;
an obtaining module, configured to obtain a scouring condition according to the thickness of the deposition layer and a preset corresponding relationship, where the preset corresponding relationship includes: the corresponding relation between the thickness of the deposition layer and the scouring condition, wherein the scouring condition corresponding to the thickness of the deposition layer is a condition for damaging the thickness of the corresponding deposition layer in a preset proportion by using minimum power consumption;
and the processing module is used for controlling water flow to flush the settled layer in the pipeline according to the flushing condition.
As an optional implementation manner of the embodiment of the present invention, the flush condition includes: the method comprises the following steps of flushing flow rate and flushing duration, wherein the flushing duration is the time from the beginning of flushing the sedimentary deposit corresponding to the thickness of the sedimentary deposit to the destruction of the thickness of the sedimentary deposit according to the preset proportion by the aid of the flushing flow rate.
As an optional implementation manner of the embodiment of the present invention, the preset corresponding relationship includes: the corresponding relation between each thickness interval and the scouring condition;
the acquisition module is specifically used for acquiring a thickness interval to which the thickness of the deposition layer belongs; and acquiring the scouring condition corresponding to the settled layer with the settled layer thickness according to the thickness interval and the preset corresponding relation.
As an optional implementation manner of the embodiment of the present invention, the apparatus further includes: the determining module is used for establishing preset scouring conditions of a plurality of scouring schemes before obtaining scouring conditions according to the thickness of the deposited layer and the preset corresponding relation, the thickness of the deposited layer in each scouring scheme is different, and the scouring flow rate of water flow for scouring the deposited layer with the thickness corresponding to the thickness of the deposited layer under the preset scouring conditions of each scouring scheme is different; calculating energy consumption required by preset scouring conditions of each scouring scheme; and determining the flushing conditions corresponding to the flushing schemes based on the energy consumption, wherein the flushing conditions are preset flushing conditions with the minimum energy consumption under the flushing schemes.
As an optional implementation manner of the embodiment of the present invention, the correspondence between each thickness interval and the flushing condition includes:
if the thickness of the deposition layer belongs to a thickness interval of 0-3 cm, the corresponding scouring flow rate is 0.4m/s, and the scouring time is 4 minutes; if the thickness of the deposition layer belongs to a thickness interval of 3-6 cm, the corresponding scouring flow rate is 0.6m/s, and the scouring time is 6 minutes; if the thickness of the deposition layer belongs to a thickness interval of 6-10 cm, the corresponding scouring flow rate is 0.7m/s, and the scouring time is 10 minutes; and if the thickness of the deposition layer is greater than or equal to 10cm, the corresponding flushing flow rate is 0.8m/s, and the flushing time is 13 minutes.
As an optional implementation manner of the embodiment of the present invention, the detection module is specifically configured to acquire a thickness of a deposition layer in the pipeline through a sonar detector.
As an optional implementation manner of the embodiment of the present invention, the detection module is specifically configured to obtain thicknesses of deposition layers at multiple positions in the pipeline by using a sonar detector; and calculating an average of the deposit layer thicknesses at the plurality of locations as the deposit layer thickness in the pipe.
As an optional implementation manner of the embodiment of the present invention, the sonar detector is disposed on the telescopic rod, and the detection module is specifically configured to adjust the length of the telescopic rod so that the sonar detector obtains thicknesses of deposition layers at multiple positions in the pipeline.
In a third aspect, an embodiment of the present invention provides an electronic device, including: a memory for storing a computer program and a processor; the processor is configured to perform the steps of the method of the first aspect or any one of the optional embodiments of the first aspect when the computer program is invoked.
In a fourth aspect, an embodiment of the present invention provides a computer-readable storage medium, on which a computer program is stored, where the computer program, when executed by a processor, implements the steps of the method according to the first aspect or any one of the optional embodiments of the first aspect.
The pipeline flushing method provided by the embodiment of the invention obtains the flushing condition by obtaining the thickness of the deposition layer in the pipeline and according to the thickness of the deposition layer and the preset corresponding relation, wherein the preset corresponding relation comprises the following steps: and controlling water flow to flush the settled layer in the pipeline according to the flushing condition. According to the embodiment of the invention, the corresponding relation exists between the thickness of the settled layer and the scouring condition, the corresponding scouring condition can be determined after the thickness of the settled layer in the pipeline is obtained, and the scouring condition is a condition for destroying the thickness of the corresponding settled layer in a preset proportion by minimum power consumption, so that the water flow in the pipeline is controlled to scour the settled layer in the pipeline under the scouring condition, the structure of the settled layer in the preset proportion can be destroyed under the condition of minimum power consumption, the metabolic environment of microorganisms is destroyed, and the generation of harmful gas is reduced.
Drawings
Fig. 1 is an application scenario diagram of a pipeline flushing method according to an embodiment of the present invention;
FIG. 2 is a flow chart illustrating the steps of a pipeline flushing method according to an embodiment of the present invention;
FIG. 3 is a flow chart illustrating steps of a pipeline flushing method according to another embodiment of the present invention;
FIG. 4 is a flow chart illustrating steps of a pipeline flushing method according to another embodiment of the present invention;
FIG. 5 is a block diagram of a pipeline flushing device according to an embodiment of the present invention;
FIG. 6 is a block diagram of a pipeline flushing device according to another embodiment of the present invention;
fig. 7 is an internal structure diagram of an electronic device according to an embodiment of the present invention.
Detailed Description
In order that the above objects, features and advantages of the present invention may be more clearly understood, a solution of the present invention will be further described below. It should be noted that the embodiments of the present invention and features of the embodiments may be combined with each other without conflict.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, but the present invention may be practiced in other ways than those described herein; it is to be understood that the embodiments described in this specification are only some embodiments of the invention, and not all embodiments.
The terms "first" and "second," and the like, in the description and in the claims of the present invention are used for distinguishing between synchronized objects, and are not used to describe a particular order of objects.
In the embodiments of the present invention, words such as "exemplary" or "for example" are used to mean serving as examples, illustrations or descriptions. Any embodiment or design described as "exemplary" or "e.g.," an embodiment of the present invention is not necessarily to be construed as preferred or advantageous over other embodiments or designs. Rather, the use of the words "exemplary" or "such as" are intended to present concepts in a concrete fashion, and in the description of embodiments of the present invention, the meaning of "a plurality" means two or more unless otherwise indicated.
Fig. 1 is an application scene diagram of an embodiment of the present invention, and referring to fig. 1, a deposit layer 2 is formed on a pipe wall by a deposit in a pipe 2, a propeller pump 1 is placed in an inspection well 3 of a sewage pipe network, one end of a telescopic rod 6 is fixed on the propeller pump 1, the other end is connected with a sonar detector 5, the length of the telescopic rod 6 can be adjusted according to needs, the sonar detector 6 can be moved by adjusting the length of the telescopic rod 6, so as to obtain thicknesses of the deposit layer at different positions in the pipe 1, a controller 7 is connected to the propeller pump 1, and the length of the telescopic rod can be adjusted by the controller 7.
The execution main body of the pipeline flushing method provided by the embodiment of the invention can be as follows: the pipeline flushing device may specifically be the controller 7 shown in fig. 1, or may also be a terminal device, and the terminal device may be a mobile phone, a tablet computer, a notebook computer, an ultra-mobile personal computer (UMPC), a netbook, a Personal Digital Assistant (PDA), a smart watch, a smart bracelet, or other types of terminal devices.
In an embodiment, as shown in fig. 2, fig. 2 is a flowchart of a pipeline flushing method according to an embodiment of the present invention. In this embodiment, the method includes the following steps S110 to S130:
and S110, acquiring the thickness of the deposition layer.
Wherein the thickness of the deposition layer is the thickness of the deposition layer in the pipeline.
Specifically, taking sewage pipelines in cities as an example, sedimentary layers in the pipelines are mainly divided into a surface layer, a middle layer and a bottom layer, and the surface layer of the sedimentary layers has the characteristics of smooth surface and compact internal structure, protects the internal environment by resisting water flow change, and provides metabolic substrates for microorganisms. The middle layer is an area where sulfate reducing bacteria mainly exist, the bottom layer is an area where methanogenic bacteria mainly exist, the sulfate reducing bacteria and the methanogenic bacteria exist in a symbiotic relationship, methyl coenzyme M generated by metabolism of the sulfate reducing bacteria can be used as a direct precursor substance for the methanogenic bacteria to metabolize to generate methane, and the methanogenic bacteria can metabolize and propagate by taking sulfide generated by metabolism of the sulfate reducing bacteria as a reaction substrate.
Optionally, the thickness of the deposition layer in the pipe is acquired by sonar detector 5.
It should be noted that, in the present embodiment, the acquisition of the thickness of the deposition layer by the sonar detector is one way to acquire the thickness of the deposition layer, but is not the only way.
Optionally, obtaining the thickness of the deposition layer in the pipe comprises the following steps a and b.
Step a, acquiring the thickness of the deposition layer at a plurality of positions in the pipeline 2 through a sonar detector 5.
And b, calculating the average value of the thicknesses of the deposition layers at the plurality of positions as the thickness of the deposition layer in the pipeline 2.
By obtaining the average value of the thickness of the deposition layers at a plurality of positions in the pipeline as the thickness of the deposition layers in the pipeline, the problem of poor scouring efficiency caused by the thickness difference among the thickness of the deposition layers at each position in the pipeline can be prevented.
Optionally, sonar detector 5 sets up on telescopic link 6, makes sonar detector 5 acquire the deposit layer thickness of a plurality of positions in pipeline 2 through adjusting the length of telescopic link 6.
And S120, acquiring a scouring condition according to the thickness of the deposition layer and a preset corresponding relation.
Wherein, the preset corresponding relation comprises: and the corresponding relation between the thickness of the deposition layer and the flushing condition, wherein the flushing condition corresponding to the thickness of the deposition layer is a condition for destroying the thickness of the corresponding deposition layer in a preset proportion by using minimum power consumption.
Optionally, the flushing condition includes a flushing flow rate and a flushing duration, and the flushing duration is a time from when the water flow starts to flush the deposition layer corresponding to the thickness of the deposition layer at the flushing flow rate to when the thickness of the deposition layer at a preset proportion is damaged.
Specifically, the thickness of the deposition layer in the preset proportion is the thickness of the surface layer of the deposition layer, and the flushing condition corresponding to the thickness of the deposition layer is a condition required when the surface layer of the deposition layer with the thickness of the deposition layer is damaged with the minimum power consumption.
And S130, controlling water flow to flush the settled layer in the pipeline according to the flushing condition.
Specifically, the controller 7 shown in fig. 1 controls the water flow in the pipeline to flush the deposition layer in the pipeline at a flushing flow rate under a flushing condition, when the flushing time reaches a flushing time duration corresponding to the flushing condition, the control of the water flow rate in the pipeline is stopped, the sonar detector 5 is used to obtain the second thickness of the deposition layer in the pipeline again, and when the sum of the value of the second thickness and the thickness value of the deposition layer in a preset proportion is less than or equal to the value of the thickness of the deposition layer, it is indicated that the surface layer of the deposition layer is damaged, the metabolic environments of sulfate reducing bacteria and methanogen are damaged, the symbiotic relationship is broken, and harmful gases such as methane and hydrogen sulfide are inhibited at the production source.
According to the pipeline flushing method provided by the embodiment of the invention, the thickness of the deposition layer in the pipeline is obtained, the flushing condition is obtained according to the corresponding relation between the thickness of the deposition layer and the flushing condition, the flushing condition corresponding to the thickness of the deposition layer is a condition for destroying the thickness of the corresponding deposition layer in a preset proportion with minimum power consumption, and then the water flow is controlled according to the flushing condition to flush the deposition layer in the pipeline. According to the embodiment of the invention, the corresponding relation exists between the thickness of the settled layer and the scouring condition, the corresponding scouring condition can be determined after the thickness of the settled layer in the pipeline is obtained, and the scouring condition is a condition for destroying the thickness of the corresponding settled layer in a preset proportion by minimum power consumption, so that the water flow in the pipeline is controlled to scour the settled layer in the pipeline under the scouring condition, the structure of the settled layer in the preset proportion can be destroyed under the condition of minimum power consumption, the metabolic environment of microorganisms is destroyed, and the generation of harmful gas is reduced.
In another embodiment of the present invention, the preset correspondence includes: the corresponding relation between each thickness interval and the scouring condition. Referring to fig. 3, fig. 3 is a description of a possible implementation manner of step S120 on the basis of fig. 2, i.e., step S120 can be implemented by the following steps S121-S122.
S121, obtaining a thickness interval to which the thickness of the deposition layer belongs.
Specifically, the thickness interval is divided according to a scouring experiment performed in advance, the sedimentary layers in the same thickness interval, the same flushing condition can be used for controlling the water flow in the pipeline to damage the surface layer of the settled layer, when the thickness of the settled layer is in the thickness interval of 0, 3cm, the thickness of the surface layer of the deposition layer is 15% -20% of the thickness of the deposition layer, when the thickness of the deposition layer is in the thickness interval of (3cm, 6 cm), the surface thickness of the deposition layer is 18-23% of the thickness of the deposition layer, when the thickness of the deposition layer is in the thickness interval of (6cm, 10 cm), the thickness of the surface layer of the deposition layer is 20% -25% of the thickness of the deposition layer, and when the thickness of the deposition layer is greater than or equal to 10cm, the thickness of the surface layer of the deposition layer is 23% -30% of the thickness of the deposition layer.
And S122, acquiring the scouring condition corresponding to the deposition layer with the deposition layer thickness according to the thickness interval and the preset corresponding relation.
Optionally, the correspondence between each thickness interval and the flushing condition includes:
if the thickness of the deposition layer belongs to a thickness interval [0, 3cm ], the corresponding scouring flow rate is 0.4m/s, and the scouring time is 4 minutes; if the thickness of the deposition layer belongs to a thickness interval (3cm, 6 cm), the corresponding scouring flow rate is 0.6m/s, and the scouring time is 6 minutes, if the thickness of the deposition layer belongs to a thickness interval (6cm, 10 cm), the corresponding scouring flow rate is 0.7m/s, and the scouring time is 10 minutes, and if the thickness of the deposition layer is greater than or equal to 10cm, the corresponding scouring flow rate is 0.8m/s, and the scouring time is 13 minutes.
Illustratively, when the thickness of the deposit is 5cm, the surface of the deposit is damaged by controlling the water flow in the pipe to wash for 6 minutes at a washing flow rate of 0.6m/s, and a second thickness of the deposit is obtained again, which should be less than or equal to 4.1 cm.
In another embodiment of the present invention, referring to fig. 4, fig. 4 is a diagram illustrating the steps S111-S113 before step S120 (obtaining the flushing condition according to the thickness of the deposition layer and the preset corresponding relationship) based on fig. 2.
S111, establishing preset scouring conditions of a plurality of scouring schemes, wherein the thickness of the sediment layer in each scouring scheme is different, and the scouring flow rate of water flow for scouring the sediment layer with the thickness corresponding to the thickness of the sediment layer under the preset scouring conditions of each scouring scheme is different.
Illustratively, the established flushing scheme has m, that is, m deposition layers are thick, the deposition layer of each deposition layer is flushed by n preset different flow rates, the n flow rates correspond to n preset flushing conditions, and the flushing time for damaging the surface layer of the corresponding deposition layer at each flow rate is recorded.
And S112, calculating the energy consumption required by the preset scouring conditions of each scouring scheme.
Specifically, the energy consumption required for destroying the surface layer of the corresponding deposition layer under each preset scouring condition is calculated through the plurality of flow rates and the corresponding scouring time in step S111, and the energy consumption required for n preset scouring conditions corresponding to the thickness of each deposition layer is sorted.
And S113, determining the flushing conditions corresponding to the flushing schemes based on the energy consumption.
And the flushing condition is a preset flushing condition with the minimum energy consumption under the flushing scheme.
The preset scouring condition with the minimum energy consumption is determined as the scouring condition of the deposition layer corresponding to the thickness of the deposition layer, so that the surface layer of the deposition layer can be damaged under the condition of the minimum energy consumption, and the generation of harmful gas is reduced.
For a detailed description, please refer to the descriptions of S110 to S130 in the above embodiments, which are not described herein.
Based on the same inventive concept, as an implementation of the foregoing method, an embodiment of the present invention further provides a pipeline flushing apparatus, where the apparatus embodiment corresponds to the foregoing method embodiment, and for convenience of reading, details in the foregoing method embodiment are not repeated in this apparatus embodiment, but it should be clear that the apparatus in this embodiment can correspondingly implement all the contents in the foregoing method embodiment.
Fig. 5 is a block diagram of a pipeline flushing device according to an embodiment of the present invention, and as shown in fig. 5, the pipeline flushing device 5 according to the embodiment includes:
the detection module 501 is configured to obtain a thickness of a deposition layer, where the thickness of the deposition layer is the thickness of the deposition layer in the pipeline;
an obtaining module 502, configured to obtain a flushing condition according to the thickness of the deposition layer and a preset corresponding relationship, where the preset corresponding relationship includes: the corresponding relation between the thickness of the deposition layer and the scouring condition, wherein the scouring condition corresponding to the thickness of the deposition layer is a condition for damaging the thickness of the corresponding deposition layer in a preset proportion by using minimum power consumption;
and the processing module 503 is configured to control water flow to flush the deposition layer in the pipeline according to the flushing condition.
As an optional implementation manner of the embodiment of the present invention, the flush condition includes: the method comprises the following steps of flushing flow rate and flushing duration, wherein the flushing duration is the time from the beginning of flushing the sedimentary deposit corresponding to the thickness of the sedimentary deposit to the destruction of the thickness of the sedimentary deposit according to the preset proportion by the aid of the flushing flow rate.
As an optional implementation manner of the embodiment of the present invention, the preset corresponding relationship includes: the corresponding relation between each thickness interval and the scouring condition;
the obtaining module 502 is specifically configured to obtain a thickness interval to which the thickness of the deposition layer belongs; and acquiring the scouring condition corresponding to the settled layer with the settled layer thickness according to the thickness interval and the preset corresponding relation.
As an optional implementation manner of the embodiment of the present invention, referring to fig. 6, the apparatus further includes: a determining module 504, configured to establish preset scouring conditions of multiple scouring schemes before obtaining scouring conditions according to the thickness of the deposit layer and the preset corresponding relationship, where the thickness of the deposit layer in each scouring scheme is different, and the scouring flow rates of water flow for scouring the deposit layer corresponding to the thickness of the deposit layer under the preset scouring conditions of each scouring scheme are different; calculating energy consumption required by preset scouring conditions of each scouring scheme; and determining the flushing conditions corresponding to the flushing schemes based on the energy consumption, wherein the flushing conditions are preset flushing conditions with the minimum energy consumption under the flushing schemes.
As an optional implementation manner of the embodiment of the present invention, the correspondence between each thickness interval and the flushing condition includes:
if the thickness of the deposition layer belongs to a thickness interval of 0-3 cm, the corresponding scouring flow rate is 0.4m/s, and the scouring time is 4 minutes; if the thickness of the deposition layer belongs to a thickness interval of 3-6 cm, the corresponding scouring flow rate is 0.6m/s, and the scouring time is 6 minutes; if the thickness of the deposition layer belongs to a thickness interval of 6-10 cm, the corresponding scouring flow rate is 0.7m/s, and the scouring time is 10 minutes; and if the thickness of the deposition layer is greater than or equal to 10cm, the corresponding flushing flow rate is 0.8m/s, and the flushing time is 13 minutes.
As an optional implementation manner of the embodiment of the present invention, the detection module 501 is specifically configured to obtain a thickness of a deposition layer in the pipeline through a sonar detector.
As an optional implementation manner of the embodiment of the present invention, the detection module 501 is specifically configured to obtain thicknesses of deposition layers at multiple positions in the pipeline by using a sonar detector; and calculating an average of the deposit layer thicknesses at the plurality of locations as the deposit layer thickness in the pipe.
As an optional implementation manner of the embodiment of the present invention, the sonar detector is disposed on a telescopic rod, and the detection module 501 is specifically configured to adjust the length of the telescopic rod so that the sonar detector obtains thicknesses of deposition layers at multiple positions in the pipeline.
The pipeline flushing device provided by the embodiment of the invention obtains the flushing condition according to the corresponding relation between the thickness of the deposit layer and the flushing condition by obtaining the thickness of the deposit layer in the pipeline, wherein the flushing condition corresponding to the thickness of the deposit layer is a condition for destroying the thickness of the corresponding deposit layer in a preset proportion with minimum power consumption, and then controls water flow to flush the deposit layer in the pipeline according to the flushing condition. According to the embodiment of the invention, the corresponding relation exists between the thickness of the settled layer and the scouring condition, the corresponding scouring condition can be determined after the thickness of the settled layer in the pipeline is obtained, and the scouring condition is a condition for destroying the thickness of the corresponding settled layer in a preset proportion by minimum power consumption, so that the water flow in the pipeline is controlled to scour the settled layer in the pipeline under the scouring condition, the structure of the settled layer in the preset proportion can be destroyed under the condition of minimum power consumption, the metabolic environment of microorganisms is destroyed, and the generation of harmful gas is reduced.
The pipeline flushing device provided by this embodiment can execute the pipeline flushing method provided by the above method embodiments, and the implementation principle and technical effect thereof are similar, and are not described herein again.
Based on the same inventive concept, the embodiment of the invention also provides electronic equipment. Fig. 7 is a schematic structural diagram of an electronic device according to an embodiment of the present invention, and as shown in fig. 7, the electronic device according to the embodiment includes: a memory 701 and a processor 702, the memory 701 being for storing a computer program; the processor 702 is configured to execute the steps of the pipeline flushing method provided by the above-described method embodiments when the computer program is called.
In particular, the memory 701 may be used to store software programs as well as various data. The memory 601 may mainly include a storage program area and a storage data area, wherein the storage program area may store an operating system, an application program required by at least one function (such as a sound playing function, an image playing function, etc.), and the like; the storage data area may store data created according to use of the electronic device, and the like. Further, the memory 701 may include high speed random access memory, and may also include non-volatile memory, such as at least one magnetic disk storage device, flash memory device, or other volatile solid state storage device.
The processor 702 is a control center of the electronic device, connects various parts of the entire electronic device using various interfaces and lines, and performs various functions of the electronic device and processes data by running or executing software programs and/or modules stored in the memory 701 and calling data stored in the memory 701, thereby performing overall monitoring of the electronic device. The processor 702 may include one or more processing units.
The embodiment of the present invention further provides a computer-readable storage medium, where a computer program is stored on the computer-readable storage medium, and when being executed by a processor, the computer program implements the steps of the pipeline flushing method provided in the foregoing method embodiment.
As will be appreciated by one skilled in the art, embodiments of the present invention may be provided as a method, system, or computer program product. Accordingly, the present invention may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present invention may take the form of a computer program product embodied on one or more computer-usable storage media having computer-usable program code embodied in the medium.
Computer readable media include both permanent and non-permanent, removable and non-removable storage media. Storage media may implement information storage by any method or technology, and the information may be computer-readable instructions, data structures, modules of a program, or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), Static Random Access Memory (SRAM), Dynamic Random Access Memory (DRAM), other types of Random Access Memory (RAM), Read Only Memory (ROM), Electrically Erasable Programmable Read Only Memory (EEPROM), flash memory or other memory technology, compact disc read only memory (CD-ROM), Digital Versatile Discs (DVD) or other optical storage, magnetic cassettes, magnetic disk storage or other magnetic storage devices, or any other non-transmission medium that can be used to store information that can be accessed by a computing device. As defined herein, computer readable media does not include transitory computer readable media (transmyedia) such as modulated data signals and carrier waves.
The technical features of the above embodiments can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the above embodiments are not described, but should be considered as the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A method of flushing a pipeline, comprising:
acquiring the thickness of a deposition layer, wherein the thickness of the deposition layer is the thickness of the deposition layer in the pipeline;
obtaining a scouring condition according to the thickness of the deposition layer and a preset corresponding relation, wherein the preset corresponding relation comprises the following steps: the corresponding relation between the thickness of the deposition layer and the scouring condition, wherein the scouring condition corresponding to the thickness of the deposition layer is a condition for damaging the thickness of the corresponding deposition layer in a preset proportion by using minimum power consumption;
and controlling water flow to flush the settled layer in the pipeline according to the flushing condition.
2. The method of claim 1, wherein the flush condition comprises:
the method comprises the following steps of flushing flow rate and flushing duration, wherein the flushing duration is the time from the beginning of flushing the sedimentary deposit corresponding to the thickness of the sedimentary deposit to the destruction of the thickness of the sedimentary deposit according to the preset proportion by the aid of the flushing flow rate.
3. The method of claim 1, wherein the preset correspondence comprises: the corresponding relation between each thickness interval and the scouring condition;
obtaining a scouring condition according to the thickness of the deposition layer and a preset corresponding relation, wherein the scouring condition comprises the following steps:
obtaining a thickness interval to which the thickness of the deposition layer belongs;
and acquiring the scouring condition corresponding to the settled layer with the settled layer thickness according to the thickness interval and the preset corresponding relation.
4. The method of claim 1, wherein prior to obtaining a flush condition based on the deposited layer thickness and a predetermined correspondence, the method further comprises:
establishing preset scouring conditions of a plurality of scouring schemes, wherein the thicknesses of the sedimentary layers in the scouring schemes are different, and the scouring flow rates of water flow for scouring the sedimentary layers corresponding to the thicknesses of the sedimentary layers under the preset scouring conditions of the scouring schemes are different;
calculating energy consumption required by preset scouring conditions of each scouring scheme;
and determining the flushing conditions corresponding to each flushing scheme based on the energy consumption, wherein the flushing conditions are preset flushing conditions with the minimum energy consumption under the flushing scheme.
5. The method of claim 3, wherein the correspondence of each thickness interval to a flush condition comprises:
if the thickness of the deposition layer belongs to a thickness interval [0, 3cm ], the corresponding scouring flow rate is 0.4m/s, and the scouring time is 4 minutes;
if the thickness of the deposition layer belongs to a thickness interval (3cm, 6 cm), the corresponding scouring flow rate is 0.6m/s, and the scouring time is 6 minutes;
if the thickness of the deposition layer belongs to a thickness interval (6cm, 10 cm), the corresponding scouring flow rate is 0.7m/s, and the scouring time is 10 minutes;
and if the thickness of the deposition layer is greater than or equal to 10cm, the corresponding flushing flow rate is 0.8m/s, and the flushing time is 13 minutes.
6. The method of any one of claims 1-5, wherein said obtaining a deposition layer thickness comprises:
and acquiring the thickness of the deposition layer in the pipeline by a sonar detector.
7. The method according to claim 6, wherein the acquiring the thickness of the deposition layer in the pipeline by a sonar detector comprises:
acquiring the thickness of the deposition layers at a plurality of positions in the pipeline through a sonar detector;
calculating an average of the deposit layer thicknesses at the plurality of locations as the deposit layer thickness in the pipe.
8. The method according to claim 7, wherein the sonar detector is arranged on a telescopic rod, and the acquisition of the thickness of the deposition layer at a plurality of positions in the pipeline through the sonar detector comprises the following steps:
the thickness of the deposition layers at multiple positions in the pipeline is obtained by the sonar detector by adjusting the length of the telescopic rod.
9. A pipe flushing apparatus, comprising:
the detection module is used for acquiring the thickness of a deposition layer, wherein the thickness of the deposition layer is the thickness of the deposition layer in the pipeline;
an obtaining module, configured to obtain a scouring condition according to the thickness of the deposition layer and a preset corresponding relationship, where the preset corresponding relationship includes: the corresponding relation between the thickness of the deposition layer and the scouring condition, wherein the scouring condition corresponding to the thickness of the deposition layer is a condition for damaging the thickness of the corresponding deposition layer in a preset proportion by using minimum power consumption;
and the processing module is used for controlling water flow to flush the settled layer in the pipeline according to the flushing condition.
10. An electronic device comprising a memory and a processor, the memory storing a computer program, wherein the processor implements the steps of the method of any one of claims 1 to 8 when executing the computer program.
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