CN113517371A - Room-temperature low-dimensional tellurium infrared photoelectric detector sensitive to black body and manufacturing method - Google Patents

Room-temperature low-dimensional tellurium infrared photoelectric detector sensitive to black body and manufacturing method Download PDF

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CN113517371A
CN113517371A CN202110392526.9A CN202110392526A CN113517371A CN 113517371 A CN113517371 A CN 113517371A CN 202110392526 A CN202110392526 A CN 202110392526A CN 113517371 A CN113517371 A CN 113517371A
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dimensional
low
nanometers
photoelectric detector
black body
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胡伟达
彭孟
王振
谢润章
余弈叶
王鹏
张莉丽
王芳
陈效双
陆卫
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Shanghai Institute of Technical Physics of CAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
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    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0272—Selenium or tellurium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876—Particular processes or apparatus for batch treatment of the devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention discloses a room-temperature low-dimensional tellurium infrared photoelectric detector sensitive to black bodies and a preparation method. The device structure comprises a substrate, a low-dimensional nano semiconductor and metal source and drain electrodes covering two ends of the device from bottom to top in sequence. The preparation method of the device comprises the steps of transferring tellurium (Te) nanowires or nanosheets grown by CVD (chemical vapor deposition) onto a silicon substrate with an oxide layer, preparing metal electrodes by using a laser direct writing or electron beam lithography method and combining a thermal evaporation process to serve as a source electrode and a drain electrode of a semiconductor channel, and forming a nanowire semiconductor field effect transistor structure to form the low-dimensional nano photoelectric detector. The device firstly needs to apply a small voltage between the source electrode and the drain electrode, and the black body detection is realized through the current signal change under the illumination of the black body light source. The blackbody sensitive detector has the characteristics of room-temperature work, blackbody sensitivity, quick response, good stability, low power consumption and the like.

Description

Room-temperature low-dimensional tellurium infrared photoelectric detector sensitive to black body and manufacturing method
Technical Field
The invention relates to a low-dimensional semiconductor photoelectric detector, in particular to a blackbody sensitive room-temperature low-dimensional tellurium infrared photoelectric detector and a preparation method thereof.
Background
The blackbody response is widely applied to a standard characteristic infrared focal plane detector, which is an important parameter to reflect the sensitivity of the infrared photoelectric detector and determine the corresponding practical application. To date, most of the available and high performance infrared and blackbody response photodetectors are based on conventional III-V and II-VI compound materials, such as InGaAs InSb, HgCdTe. However, the high growth cost and the strict cooling requirement of the epitaxial growth methods such as Molecular Beam Epitaxy (MBE), Metal Organic Chemical Vapor Deposition (MOCVD) and the like severely limit the wide application and popularization of the traditional infrared detectors.
With the rise and the gradual development of low-dimensional materials, the narrow-bandgap low-dimensional material has remarkable potential in the next generation infrared photoelectric detector working at room temperature. Compared with the traditional material, the low-dimensional layered material is separated from the surface dangling bond by the unique out-of-plane van der Waals force, and the dark current generated by the surface recombination of the device is reduced. On the other hand, strong light-matter interaction flow is generated due to quantum confinement. The dimensional materials enable them to exhibit excellent light detection capabilities. At present, the low-dimensional infrared detector obtains ultrahigh response rate and detectability under infrared laser illumination. However, in the practical application of infrared photodetectors, the blackbody source radiation is closer to the actual irradiation of the object being detected than the laser source. The sensitivity of the black body means that low-dimensional system detectors can be an important step towards commercial applications. To date, only a few quantum dot, carbon tube and black phosphorus based infrared detectors have responded to black body radiation.
Low dimensional tellurium, as an emerging narrow bandgap semiconductor, is an ideal choice for high performance transistors and photodetectors at room temperature. The optical fiber photoelectric sensor has the characteristics of semiconductors, photoelectricity, thermoelectricity, piezoelectricity, gas sensitivity, transparent conductivity and the like, and can be widely applied to the technical fields of optical fiber communication, high-speed electronic devices, optoelectronic devices, biosensors, photoelectric detectors, communication satellites, solar cells and the like as optoelectronic devices.
In order to solve the problems of the black body sensitive detector, the invention provides a black body sensitive room temperature low-dimensional tellurium infrared photoelectric detection method. The method is based on Chemical Vapor Deposition (CVD) grown tellurium (Te) to manufacture a field effect transistor, and the CVD grown low-dimensional Te has rich surface states, large specific surface area and high carrier mobility, and the three properties together can help the low-dimensional nanometer device to have black body sensitivity at room temperature.
Disclosure of Invention
The invention provides a blackbody sensitive room-temperature low-dimensional tellurium infrared photoelectric detector and a preparation method thereof, and realizes the application of a low-dimensional nano semiconductor field effect structure in the field of room-temperature blackbody sensitive detection.
Said invention introduces low-dimensional nano material and its grating effect into black body sensitive detection structure, said detector structure is based on field effect transistor, and utilizes the low-dimensional nano tellurium surface state to capture photon-induced electron at room temp. to produce grating effect, so that it can implement high sensitivity, low power consumption and black body detection of device.
The invention relates to a black body sensitive room temperature low-dimensional tellurium infrared photoelectric detector and a preparation method thereof, which are characterized in that the structure of the device is as follows from bottom to top:
p-type Si substrate 1, SiO2Oxide layer 2 on SiO2Low-dimensional Te semiconductor 3 on the oxide layer, metal source 4 and metal drain 5 that are located low-dimensional Te semiconductor both ends respectively, wherein:
the substrate 1 is a Si substrate heavily doped with boron, and the resistivity is less than 0.05 omega cm; (ii) a
The oxide layer 2 is SiO2The thickness is 280 +/-10 nanometers;
the low-dimensional Te semiconductor 3 is a Te nanowire or a nanosheet, the length of a channel is 10 microns, the diameter of the nanowire is 50 nanometers to 300 nanometers, the thickness of the nanosheet is 40-80 nanometers, and the width of the nanosheet is 5-8 microns;
the metal source electrode 4 and the metal drain electrode 5 are Pt and Au composite metal electrodes, Pt covers Au, the thickness of Pt is 50 nanometers, the thickness of Au is 50 nanometers,
the invention relates to a black body sensitive room temperature low-dimensional tellurium infrared photoelectric detector and a preparation method thereof, which is characterized in that the preparation of the device comprises the following steps:
1) oxide layer preparation
And preparing oxide layer silicon dioxide on the heavily doped Si substrate by a thermal oxidation method, wherein the thickness of the oxide layer silicon dioxide is 280 nanometers.
2) Low-dimensional nano-semiconductor preparation and transfer
And growing and preparing the low-dimensional Te nanowire and the nanosheet material on the Si substrate by adopting a chemical vapor deposition method, and transferring the low-dimensional Te nanowire or nanosheet semiconductor 3 to the surface of the oxide layer 2 by adopting a physical transfer method.
3) Preparation of low-dimensional nano semiconductor source and drain electrode
And accurately positioning and depositing a metal source electrode 4 and a metal drain electrode 5 of platinum and gold above the pre-transferred Te nano material by utilizing the electron beam exposure EBL technology, thermal evaporation, stripping and other technologies, wherein the electrodes are the platinum and the gold, and the thicknesses of the electrodes are respectively 50 nanometers and 50 nanometers.
When the device works, a tiny constant voltage is introduced between the source electrode and the drain electrode, and the current at two ends of the electrode is detected. A schematic diagram of the state of operation of the device is shown in fig. 2. When a blackbody light source is irradiated on the device, photo-generated electron holes are generated. Electrons are excited into the surface state of the nanowire under the action of negative bias and are trapped for a long time, and holes are left in a device channel. On the other hand, the trapped electrons increase the hole concentration in the low-dimensional tellurium nanomaterial through capacitive coupling, and the channel current is increased again. The two actions are carried out simultaneously, and obvious jump of current can be observed in the current of the two sections of the detection source-drain electrodes. The black body response rate and specific detectivity of the low dimensional tellurium nano-devices are shown in fig. 3.
The invention has the advantages that: the invention is based on high-quality low-dimensional tellurium materials, has rich surface states, large specific surface area and high carrier mobility, combines a field effect structure, and effectively traps photo-generated holes for a long time by utilizing the surface states of low-dimensional nanometer devices so as to cause a grating effect and enable the change of ground current caused by the irradiation of a black body light source to be detected. In addition, the device also has the characteristics of room temperature work, sensitive blackbody, quick response, good stability, low power consumption and the like.
Drawings
Fig. 1 is a schematic structural diagram of a blackbody sensitive room temperature semiconductor detector based on a low-dimensional Te material.
In the figure: 1 substrate, 2 oxide layers, 3 low-dimensional tellurium semiconductors, 4 metal source electrodes and 5 metal drain electrodes.
FIG. 2 is a schematic diagram of a blackbody light source test performed by a blackbody sensitive room temperature semiconductor detector based on a low-dimensional Te material.
FIG. 3 shows the response rate and specific detection rate of a blackbody sensitive room temperature semiconductor detector based on a low-dimensional Te material under a 1200K blackbody irradiation light source under different frequency chopping waves.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings in which:
the invention provides a blackbody sensitive room-temperature low-dimensional tellurium infrared photoelectric detector and a preparation method thereof, and realizes the application of a low-dimensional nano semiconductor field effect structure in the field of room-temperature blackbody sensitive detection. The invention introduces the low-dimensional nano material and the grating effect thereof into the black body sensitive detection structure, the detector structure is based on a field effect transistor, and utilizes the surface state of the low-dimensional nano tellurium to capture photon-induced electrons at room temperature to cause the grating effect, thus realizing high sensitivity, low power consumption and black body detection of the device.
The method comprises the following specific steps:
1. selection of substrates
Selecting B heavily doped p-type silicon as substrate with resistivity of 0.05 omega cm and SiO2The thickness of the oxide layer is 280 nm;
preparation of mark marks
Preparing a mark pattern on a p-type silicon substrate by using an ultraviolet photoetching method, preparing a metal mark by using a thermal evaporation technology, wherein the chromium is 15 nanometers, the gold is 45 nanometers, and stripping a metal film by combining a traditional stripping method to obtain a metal mark.
3. Preparation and transfer of materials
Preparing low-dimensional Te nano material on pure silicon chip by Chemical Vapor Deposition (CVD) method, including nano wire and nano sheet, firstly, SnTe is added2The powder is placed on a ceramic boat and is placed in the center of a quartz tube, and a tube furnace at the periphery of the quartz tube can heat the system. The Si sheet is flatly placed on a quartz boat and is placed at the position 15cm away from the powder at the downstream of the airflow of the quartz tube. Vacuum-pumping to 1 × 10- 1Pa, in the reaction process, the system keeps argon with the flow of 100sccm as carrier gas, the temperature is heated to 650 ℃ from room temperature, the air pressure is maintained at 1000Pa, then the temperature is kept for 30 minutes, after the experiment is finished, the heating is stopped, the carrier gas is continuously introduced, and the reaction tube is naturally cooled to the room temperature. Finally, physically transferring the grown nano-wire or nano-sheet to SiO2And oxidizing the p-type silicon substrate with the mark layer.
4. Preparing source and drain electrodes
Photographing materials through an optical microscope, designing and preparing a bottom electrode graph by utilizing DesignCAD21 software, spin-coating PMMA by using a spin coater, wherein the rotating speed is 4000 revolutions per minute, the time is 40s, and the drying time at 170 ℃ is 5 minutes; carrying out accurate positioning exposure on the electrode pattern by using electron beam exposure, and then developing by using a PMMA developing solution; preparing a metal electrode by utilizing a thermal evaporation technology, wherein the platinum is 50 nanometers, and the gold is 50 nanometers; and (3) combining the traditional stripping method, soaking the substrate in an acetone solution for 10 minutes, and stripping the metal film to obtain the source electrode and the drain electrode.
5. Fig. 1 is a schematic diagram of a device structure.
6. Fig. 2 is a schematic diagram of a blackbody test performed on the device. When a 1200K blackbody light source is irradiated on the device, the photosensitive region generates photo-generated electron holes. Electrons are excited into the surface state of the nanowire under the action of bias voltage and are trapped for a long time, and holes are left in a device channel. On the other hand, the trapped electrons increase the hole concentration in the low-dimensional tellurium nanomaterial through capacitive coupling, and the channel current is increased again. The two actions are carried out simultaneously, and obvious jump of current can be observed in the current of the two sections of the detection source-drain electrodes.
7. FIG. 3 shows the response rate and specific detection rate of a blackbody sensitive room temperature semiconductor detector based on a low-dimensional Te material under the irradiation of a 1200K blackbody light source and at different chopping frequencies. For different shapes (nano wires or nano sheets) and sizes (the diameter of the nano wires is 50-300 nm; the thickness of the nano sheets is 40-80 nm), the device shows ultrahigh black body response performance, and the formulas of the response rate and the detectivity are respectively
Figure BDA0003017294690000061
Figure BDA0003017294690000062
a) The detectivity of the photoelectric detector of the single Te nano-wire (diameter is 30nm, channel is 5 mu m) low-dimensional infrared photoelectric detector in a blackbody (1200K) reaches 3 multiplied by 108Jones；
b) The detectivity of the photoelectric detector of the single Te nano-wire (diameter 150nm, channel 5 mu m) low-dimensional infrared photoelectric detector in a blackbody (1200K) reaches 3.6 multiplied by 108Jones；
c) The detectivity of the photoelectric detector of the single Te nano-wire (diameter 300nm, channel 5 mu m) low-dimensional infrared photoelectric detector in a blackbody (1200K) reaches 3.8 multiplied by 108Jones；
d) The detectivity of the photoelectric detector of the low-dimensional infrared photoelectric detector with a single Te nano-sheet (width of 5 mu m, thickness of 40nm and channel of 5 mu m) in a black body (1200K) reaches 4.2 multiplied by 108Jones；
e) Single Te nanosheet (width 7 μm, thickness 60nm, channel 5 μm)m) the detection rate of the photoelectric detector of the low-dimensional infrared photoelectric detector on a black body (1200K) reaches 5.6 multiplied by 108Jones；
f) The detectivity of the photoelectric detector of the low-dimensional infrared photoelectric detector with a single Te nano-sheet (the width is 8 mu m, the thickness is 80nm, and the channel is 5 mu m) in a black body (1200K) reaches 6.3 multiplied by 108Jones；
The result shows that the blackbody sensitive room-temperature low-dimensional tellurium infrared photoelectric detector and the preparation method thereof can effectively detect the blackbody light source at room temperature, thereby improving the practicability of the nano-material semiconductor photon detection device.

Claims (2)

1. A room temperature low dimensional tellurium infrared photoelectric detector sensitive to black body is characterized in that,
the detector has the following device structures from bottom to top in sequence: p-type Si substrate (1), SiO2An oxide layer (2), a low-dimensional Te semiconductor (3); a metal source (4) and a metal drain (5) respectively located at two ends of the low-dimensional Te semiconductor, wherein:
the substrate (1) is a Si substrate heavily doped with boron, and the resistivity is less than 0.05 omega cm;
the oxide layer (2) is SiO2The thickness is 280 +/-10 nanometers;
the low-dimensional Te semiconductor (3) is a Te nanowire or a nanosheet, the length of a channel is from 5 micrometers, the diameter of the nanowire is from 30 nanometers to 300 nanometers, the thickness of the nanosheet is 40-80 nanometers, and the width of the nanosheet is 5-8 micrometers;
the metal source electrode (4) and the metal drain electrode (5) are Pt and Au composite metal electrodes, Pt covers Au, the thickness of Pt is 50 nanometers, and the thickness of Au is 50 nanometers.
2. A method of making a black body sensitive room temperature low dimensional tellurium infrared photodetector as claimed in claim 1, comprising the steps of:
1) production of SiO on a P-type Si substrate (1) by thermal oxidation2An oxide layer (2);
2) preparing low-dimensional Te nano material by growing on Si substrate by chemical vapor deposition method, including nanowireAnd nanosheets, and transferring the low-dimensional Te semiconductor (3) to SiO by physical transfer method2The surface of the oxide layer (2);
3) and accurately positioning and depositing a metal source electrode (4) and a metal drain electrode (5) of platinum and gold above the pre-transferred Te nano material by utilizing the electron beam exposure EBL technology, thermal evaporation, stripping and other technologies to form a low-dimensional nano photoelectric detector device.
CN202110392526.9A 2021-04-13 2021-04-13 Room-temperature low-dimensional tellurium infrared photoelectric detector sensitive to black body and manufacturing method Pending CN113517371A (en)

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