CN113515022B - Damage detection method for lighting system of photoetching machine - Google Patents
Damage detection method for lighting system of photoetching machine Download PDFInfo
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- CN113515022B CN113515022B CN202110856322.6A CN202110856322A CN113515022B CN 113515022 B CN113515022 B CN 113515022B CN 202110856322 A CN202110856322 A CN 202110856322A CN 113515022 B CN113515022 B CN 113515022B
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- 238000001514 detection method Methods 0.000 title claims abstract description 39
- 238000001259 photo etching Methods 0.000 title claims abstract description 35
- 210000001747 pupil Anatomy 0.000 claims abstract description 63
- 238000001459 lithography Methods 0.000 claims abstract description 45
- 238000005286 illumination Methods 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 26
- 238000013507 mapping Methods 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000005070 sampling Methods 0.000 description 12
- 230000008859 change Effects 0.000 description 8
- 238000003384 imaging method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The application discloses a damage detection method for a lighting system of a photoetching machine, and relates to the field of semiconductor manufacturing. The damage detection method of the lighting system of the lithography machine comprises the steps of obtaining light intensity distribution data of a pupil plane of the lithography machine; calculating a light intensity filling ratio according to the light intensity distribution data; detecting whether damage occurs to the lighting system of the lithography machine according to the light intensity filling ratio; the problem of low efficiency and long time consumption in the existing detection of damage of a lighting system of a photoetching machine is solved; the damage of the lighting system of the photoetching machine is detected in time, the damage data of the lighting system of the photoetching machine is realized, and the detection result is more accurate.
Description
Technical Field
The application relates to the field of semiconductor manufacturing, in particular to a damage detection method for a lighting system of a photoetching machine.
Background
A lithographic apparatus is a device that performs a lithographic process during semiconductor manufacturing. The photoetching machine comprises an illumination system, a laser light source emits from a laser end, laser reaches a preset position along a light path in the illumination system, and the laser is used for exposing a wafer through a mask.
The illumination system comprises a lens or a reflecting mirror for guiding a laser light path, and the lens or the reflecting mirror of the light path is easy to burn by laser due to extremely high laser energy, so that the distribution of the laser is influenced, the distribution of the energy in the illumination system is scattered, and the imaging performance of the photoetching machine is further influenced.
Currently, a method for detecting a lens or a reflector failure in an illumination system of a lithography machine generally turns on a change of an optical path in the illumination system, and irradiates the lens or the reflector with a strong light flashlight to check whether burn spots appear. However, this detection method has low detection efficiency and takes a long time.
Disclosure of Invention
In order to solve the problems in the related art, the application provides a damage detection method for a lighting system of a lithography machine. The technical scheme is as follows:
in one aspect, an embodiment of the present application provides a method for detecting damage to an illumination system of a lithography machine, where the method includes:
acquiring light intensity distribution data of a pupil plane of the photoetching machine;
calculating a light intensity filling ratio according to the light intensity distribution data;
and detecting whether damage occurs to the illumination system of the lithography machine according to the light intensity filling ratio.
Optionally, acquiring light intensity distribution data of a pupil plane of the lithography machine includes:
projecting a light spot of an illumination system of the lithography machine to a predetermined sensor in the lithography machine through a photomask with a pin hole;
light intensity distribution data of the pupil plane is acquired by a predetermined sensor.
Optionally, the predetermined sensor is a TIS sensor or an ILIAS sensor.
Optionally, calculating the light intensity filling ratio according to the light intensity distribution data includes:
setting an upper limit value and a lower limit value of light intensity detection, wherein the upper limit value of light intensity detection is larger than the lower limit value of light intensity detection;
summing the light intensity distribution data smaller than the light intensity detection upper limit value and larger than the light intensity detection lower limit value to obtain a first light intensity total value;
summing all light intensity distribution data of the pupil plane to obtain a second light intensity total value;
the ratio of the first light intensity total value to the second light intensity total value is denoted as the light intensity filling ratio.
Optionally, the method comprises:
and drawing a light intensity tone scale chart according to the light intensity distribution data.
Optionally, drawing the light intensity tone scale map according to the light intensity distribution data includes:
setting a coordinate system of a corresponding pupil plane by taking the center of the pupil plane as an origin;
converting the light intensity distribution data into light intensity data having pupil plane coordinates; the pupil plane coordinates are coordinates in a coordinate system corresponding to the pupil plane;
and drawing a light intensity tone scale chart according to the light intensity data.
Optionally, after converting the light intensity distribution data into light intensity data having pupil plane coordinates, the method further comprises:
the light intensity data is displayed in a tabular form, column numbers in the table correspond to the abscissa of the pupil plane coordinates, and row numbers in the table correspond to the ordinate of the pupil plane coordinates.
Optionally, after drawing the light intensity tone scale map according to the light intensity data, the method further includes:
drawing a light intensity distribution curve graph according to light intensity data with pupil plane coordinates, wherein the light intensity distribution curve graph comprises a horizontal light intensity distribution curve and a vertical light intensity distribution curve;
the horizontal light intensity distribution curve comprises light intensity data corresponding to the ordinate of 0, and the vertical light intensity distribution curve corresponds to the light intensity data corresponding to the abscissa of 0.
Optionally, detecting whether damage occurs to the illumination system of the lithography machine according to the light intensity filling ratio includes:
acquiring the light intensity filling ratio at the moment M and the light intensity filling ratio at the moment N; the N time is after the M time;
detecting whether the light intensity filling ratio at the moment N is smaller than the light intensity filling ratio at the moment M;
if the light intensity filling ratio at the moment N is detected to be smaller than the light intensity filling ratio at the moment M, determining that the lighting system of the photoetching machine is damaged.
The technical scheme of the application at least comprises the following advantages:
the method comprises the steps of obtaining light intensity distribution data of a pupil plane of a photoetching machine, calculating a light intensity filling ratio according to the light intensity distribution data, and detecting whether an illumination system of the photoetching machine is damaged according to the light intensity filling ratio; the problem of low efficiency and long time consumption in the existing detection of damage of a lighting system of a photoetching machine is solved; the damage of the lighting system of the photoetching machine is detected in time, the damage data of the lighting system of the photoetching machine is realized, and the detection result is more accurate.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described, and it is obvious that the drawings in the description below are some embodiments of the present application, and other drawings can be obtained according to the drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flowchart of a method for detecting damage to a lighting system of a lithography machine according to an embodiment of the present application;
FIG. 2 is a schematic diagram of a light intensity tone scale chart according to an embodiment of the present application;
fig. 3 is a schematic diagram of a graph of light intensity distribution according to an embodiment of the present application.
Detailed Description
The following description of the embodiments of the present application will be made more apparent and fully hereinafter with reference to the accompanying drawings, in which some, but not all embodiments of the application are shown. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
In the description of the present application, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; the two components can be directly connected or indirectly connected through an intermediate medium, or can be communicated inside the two components, or can be connected wirelessly or in a wired way. The specific meaning of the above terms in the present application will be understood in specific cases by those of ordinary skill in the art.
In addition, the technical features of the different embodiments of the present application described below may be combined with each other as long as they do not collide with each other.
Referring to fig. 1, a flowchart of a method for detecting damage to an illumination system of a lithography machine according to an embodiment of the present application is shown, where the method at least includes the following steps:
step 101, acquiring light intensity distribution data of a pupil plane of a photoetching machine.
The light intensity distribution data includes light intensity values of light intensity sampling points on the pupil plane.
And 102, calculating the light intensity filling ratio according to the light intensity distribution data.
The light intensity filling ratio is used to represent the energy distribution in the illumination system of the lithography machine.
And calculating the light intensity filling ratio according to the light intensity value in the light intensity distribution data.
And step 103, detecting whether damage occurs to the illumination system of the lithography machine according to the light intensity filling ratio.
The light intensity filling ratio of the lithography machine illumination system of each lithography machine station may be different, when detecting whether the lithography machine illumination system of the lithography machine station is damaged, the lithography machine illumination system needs to be used as a reference to detect the change condition of the light intensity filling ratio of the lithography machine illumination system, and whether the lithography machine illumination system is damaged is judged according to the change condition of the light intensity filling ratio.
If the change condition of the light intensity filling ratio is detected to be reduced, determining that the lighting system of the photoetching machine is damaged; if the change condition of the light intensity filling ratio is detected not to be reduced, determining that the lighting system of the photoetching machine is not damaged.
In general, if the illumination system of the photoetching machine is not damaged, the light intensity filling ratio is not changed.
In the embodiment of the application, damage to the illumination system of the lithography machine means that a lens or a reflecting mirror in the illumination system of the lithography machine is burnt, the imaging performance of the lithography machine is affected, and the imaging is deteriorated.
The decrease in the intensity filling ratio indicates an increase in the scattered light in the pupil plane, the more discrete the energy distribution in the illumination system of the lithography machine.
In summary, according to the damage detection method for the illumination system of the lithography machine provided by the embodiment of the application, the light intensity distribution data of the pupil plane of the lithography machine is obtained, the light intensity filling ratio is calculated according to the light intensity distribution data, and whether the damage occurs to the illumination system of the lithography machine is detected according to the light intensity filling ratio; the problem of low efficiency and long time consumption in the existing detection of damage of a lighting system of a photoetching machine is solved; the damage of the lighting system of the photoetching machine is detected in time, the damage data of the lighting system of the photoetching machine is realized, and the detection result is more accurate.
Another embodiment of the present application provides a method for detecting damage to a photoresist illumination system, including the steps of:
in step 201, a light spot of an illumination system of a lithography machine is projected to a predetermined sensor in the lithography machine through a reticle with a pin hole.
The photomask with pin holes has a series of small holes of different sizes for light transmission, and the photomask with pin holes is provided by a lithography machine manufacturer.
Optionally, the photolithography machine is a photomask with pin holes.
The photoetching machine station provides a light source, and light spots of the photoetching machine illumination system are projected to a preset sensor in the photoetching machine through a photomask with pin holes.
In step 202, light intensity distribution data of the pupil plane is acquired by a predetermined sensor.
Alternatively, the predetermined sensor is a TIS sensor or a ILIAS (integrated Lens Interferometer At Scanner) sensor.
Optionally, the light intensity distribution data of each light intensity sampling point on the pupil plane is obtained by a predetermined sensor, where the light intensity distribution data includes a light intensity value of each light intensity sampling point and position information of the light intensity sampling point on the pupil plane.
In step 203, an upper limit value for light intensity detection and a lower limit value for light intensity detection are set, wherein the upper limit value for light intensity detection is greater than the lower limit value for light intensity detection.
The light intensity detection upper limit value and the light intensity detection lower limit value are preset light intensity values.
And 204, summing the light intensity distribution data smaller than the light intensity detection upper limit value and larger than the light intensity detection lower limit value to obtain a first light intensity total value.
And selecting the light intensity distribution data which is smaller than the light intensity detection upper limit value and larger than the light intensity detection lower limit value in all the acquired light intensity distribution data of the pupil plane, and summing the light intensity values in the selected light intensity distribution data to obtain a first light intensity total value.
One light intensity distribution data corresponds to one light intensity sampling point.
Step 205, summing all the light intensity distribution data of the pupil plane to obtain a second total light intensity value.
And summing the light intensity values in all the acquired light intensity distribution data of the pupil plane to obtain a second light intensity total value.
At step 206, the ratio of the first light intensity total value to the second light intensity total value is referred to as the light intensity filling ratio.
The light intensity filling ratio is calculated, light intensity filling ratio = first light intensity total value/second light intensity total value.
In step 207, the light intensity filling ratio at the M time and the light intensity filling ratio at the N time are obtained.
Time N follows time M.
The light intensity filling ratio at the time M and the light intensity filling ratio at the time N are obtained in steps 201 to 206.
Optionally, the N time is the current detection time, and the M time is a time before the current detection time.
Step 208, detecting whether the light intensity filling ratio at time N is smaller than the light intensity filling ratio at time M.
If the light intensity filling ratio at the moment N is detected to be smaller than the light intensity filling ratio at the moment M, determining that the lighting system of the photoetching machine is damaged.
In one example, the M time is a time when the lithography machine illumination system is not damaged, and the light intensity filling ratio of the lithography machine illumination system at the M time is obtained; and comparing the light intensity filling ratio at the moment M with the light intensity filling ratio at the moment N to obtain the change condition of the light intensity filling ratio. If the light intensity filling ratio at the time N is detected to be smaller than the light intensity filling ratio at the time M, the damage of the lighting system of the photoetching machine is determined, and if the light intensity filling ratio at the time N is detected to be not smaller than the light intensity filling ratio at the time M, the lighting system of the photoetching machine is determined to be not damaged.
The smaller the light intensity filling ratio, the more discrete the energy distribution in the photoresist illumination system, and the worse the imaging performance of the lithography machine.
In one example, the M time is the time when the loss of the illumination system of the lithography machine has occurred, and the light intensity filling ratio of the illumination system of the lithography machine at the M time is obtained; and comparing the light intensity filling ratio at the moment M with the light intensity filling ratio at the moment N to obtain the change condition of the light intensity filling ratio. If the light intensity filling ratio at the moment N is detected to be smaller than the light intensity filling ratio at the moment M, the damage of the illumination system of the photoetching machine at the moment N is aggravated, and if the light intensity filling ratio at the moment N is detected to be not smaller than the light intensity filling ratio at the moment M, the damage of the illumination system of the photoetching machine at the moment N is not aggravated.
The technician can determine whether to repair the illumination system of the lithography machine through the change condition of the light intensity filling ratio.
In the process of detecting damage of the illumination system of the lithography machine, the data can be visualized, so that the light intensity distribution condition of the pupil plane can be displayed more intuitively, and the method can further comprise the following steps:
step 301, drawing a light intensity tone scale chart according to the light intensity distribution data.
Step 301 may be performed before "calculating the light intensity filling ratio from the light intensity distribution data", or may be performed after "calculating the light intensity filling ratio from the light intensity distribution data".
This step may be implemented as follows:
in step 3011, a coordinate system corresponding to the pupil plane is set with the center of the pupil plane as the origin.
And establishing a plane coordinate system corresponding to the pupil plane, and taking the central point of the pupil plane as the origin of the coordinate system.
In step 3012, the light intensity distribution data is converted into light intensity data having pupil plane coordinates, which are coordinates in a coordinate system of the corresponding pupil plane.
The obtained light intensity distribution data is that one light intensity sampling point corresponds to one light intensity value, taking table 1 as an example:
TABLE 1
| Serial number of light intensity sampling point | Light intensity value |
| 1 | 0.0 |
| ...... | ...... |
| a | 9.15371894836426 |
| b | 54.3263378143311 |
| ...... | ....... |
And converting the light intensity distribution data into light intensity data with pupil plane coordinates, wherein the light intensity data comprises the pupil plane coordinates and the light intensity values corresponding to the light intensity sampling points. The pupil plane coordinates are determined based on the position information of the light intensity sampling points in the light intensity distribution data on the pupil plane.
The light intensity distribution data in table 1 were converted to obtain light intensity data as shown in table 2:
TABLE 2
| Serial number of light intensity sampling point | Abscissa of the circle | Ordinate of the ordinate | Light intensity value |
| 1 | 35 | 106 | 0.0 |
| ...... | ...... | ...... | ...... |
| a | 35 | 111 | 9.15371894836426 |
| b | 35 | 112 | 54.3263378143311 |
| ...... | ...... | ...... | ....... |
Optionally, the light intensity data further includes a distance between the light intensity sampling point and a pupil plane center; and calculating the distance between the light intensity sampling point and the center of the pupil plane according to the converted pupil plane coordinates.
Optionally, after the light intensity distribution data is converted into the light intensity data with the pupil plane coordinates, for convenience of display, the light intensity data is displayed in a table form, a column number in the table corresponds to an abscissa of the pupil plane coordinates, a row number in the table corresponds to an ordinate of the pupil plane coordinates, and a table position determined by the row number and the column number fills the light intensity value corresponding to the pupil plane coordinates.
And 3013, drawing a light intensity tone scale chart according to the light intensity data.
In one example, as shown in fig. 2, the light intensity value corresponding to the broken line 21 is a light intensity detection upper limit value, the light intensity value corresponding to the broken line 22 is a light intensity detection lower limit value, and the annular region represents the light intensity distribution on the pupil plane 23. When damage occurs to the illumination system of the lithography machine, halation 24 may occur in the intensity level map.
Step 302, drawing a light intensity distribution curve graph according to light intensity data with pupil plane coordinates, wherein the light intensity distribution curve graph comprises a horizontal light intensity distribution curve and a vertical light intensity distribution curve;
the horizontal light intensity distribution curve comprises light intensity data corresponding to the ordinate of 0, and the vertical light intensity distribution curve corresponds to the light intensity data corresponding to the abscissa of 0. The light intensity distribution graph is used to judge the light intensity distribution difference in the horizontal direction (pupil plane ordinate y=0) and the vertical direction (pupil plane abscissa x=0) within the pupil plane.
In one example, as shown in fig. 3, a vertical light intensity distribution curve 31 is plotted from the light intensity values in the light intensity data whose abscissa of the pupil plane is 0, and a horizontal light intensity distribution curve 32 is plotted from the light intensity values in the light intensity data whose ordinate of the pupil plane is 0; since there is a damage to the illumination system of the lithography machine, there is a significant difference between the light intensity distribution in the horizontal direction (y=0) and the light intensity distribution in the vertical direction (x=0), and there is a tailing phenomenon between the vertical light intensity distribution curve 31 and the horizontal light intensity distribution curve 32.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. While still being apparent from variations or modifications that may be made by those skilled in the art are within the scope of the application.
Claims (8)
1. A method for detecting damage to an illumination system of a lithography machine, the method comprising:
acquiring light intensity distribution data of a pupil plane of an illumination system of the photoetching machine;
calculating a light intensity filling ratio according to the light intensity distribution data;
detecting whether damage occurs to the lighting system of the lithography machine according to the light intensity filling ratio;
wherein, the calculating the light intensity filling ratio according to the light intensity distribution data comprises:
setting an upper limit value and a lower limit value of light intensity detection, wherein the upper limit value of light intensity detection is larger than the lower limit value of light intensity detection;
summing the light intensity distribution data smaller than the light intensity detection upper limit value and larger than the light intensity detection lower limit value to obtain a first light intensity total value;
summing all light intensity distribution data of the pupil plane to obtain a second light intensity total value;
and recording the ratio of the first light intensity total value to the second light intensity total value as the light intensity filling ratio.
2. The method of claim 1, wherein the acquiring the light intensity distribution data of the pupil plane of the lithography machine illumination system comprises:
projecting light spots of the lighting system of the photoetching machine to a preset sensor in the photoetching machine through a photomask with pin holes;
and acquiring light intensity distribution data of the pupil plane through the preset sensor.
3. The method of claim 2, wherein the predetermined sensor is a TIS sensor or an ILIAS sensor.
4. The method according to claim 1, characterized in that the method comprises:
and drawing a light intensity tone scale chart according to the light intensity distribution data.
5. The method of claim 4, wherein mapping the intensity of light from the intensity distribution data comprises:
setting a coordinate system of a corresponding pupil plane by taking the center of the pupil plane as an origin;
converting the light intensity distribution data into light intensity data having pupil plane coordinates; the pupil plane coordinates are coordinates in a coordinate system of the corresponding pupil plane;
and drawing the light intensity tone scale graph according to the light intensity data.
6. The method of claim 5, wherein after said converting the light intensity distribution data into light intensity data having pupil plane coordinates, the method further comprises:
and displaying the light intensity data in a table form, wherein the column serial numbers in the table correspond to the abscissa of the pupil plane coordinate, and the row serial numbers in the table correspond to the ordinate of the pupil plane coordinate.
7. The method of claim 5, wherein after the mapping the light intensity tone scale according to the light intensity data, the method further comprises:
drawing a light intensity distribution curve graph according to the light intensity data with the pupil plane coordinates, wherein the light intensity distribution curve graph comprises a horizontal light intensity distribution curve and a vertical light intensity distribution curve;
wherein the horizontal light intensity distribution curve comprises light intensity data corresponding to an ordinate of 0, and the vertical light intensity distribution curve corresponds to light intensity data corresponding to an abscissa of 0.
8. The method according to any one of claims 1 to 7, wherein detecting whether damage has occurred to the lithography machine illumination system based on the light intensity filling ratio comprises:
acquiring the light intensity filling ratio at the moment M and the light intensity filling ratio at the moment N; the N time is after the M time;
detecting whether the light intensity filling ratio at the time N is smaller than the light intensity filling ratio at the time M;
and if the light intensity filling ratio at the moment N is detected to be smaller than the light intensity filling ratio at the moment M, determining that the lighting system of the photoetching machine is damaged.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5650854A (en) * | 1995-06-02 | 1997-07-22 | Sony Corporation | Method of checking defects in patterns formed on photo masks |
| JP2004303760A (en) * | 2003-03-28 | 2004-10-28 | Canon Inc | Device and method for measuring euv light intensity distribution |
| CN108716982A (en) * | 2018-04-28 | 2018-10-30 | Oppo广东移动通信有限公司 | Optical element detection method, device, electronic equipment and storage medium |
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- 2021-07-28 CN CN202110856322.6A patent/CN113515022B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5650854A (en) * | 1995-06-02 | 1997-07-22 | Sony Corporation | Method of checking defects in patterns formed on photo masks |
| JP2004303760A (en) * | 2003-03-28 | 2004-10-28 | Canon Inc | Device and method for measuring euv light intensity distribution |
| CN108716982A (en) * | 2018-04-28 | 2018-10-30 | Oppo广东移动通信有限公司 | Optical element detection method, device, electronic equipment and storage medium |
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