CN113512757B - A kind of bulk high-quality scintillation crystal and its preparation method and application - Google Patents
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- 239000013078 crystal Substances 0.000 title claims abstract description 115
- 238000002360 preparation method Methods 0.000 title abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 18
- 238000001514 detection method Methods 0.000 claims abstract description 12
- 239000010453 quartz Substances 0.000 claims description 41
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 41
- 239000000463 material Substances 0.000 claims description 19
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- 230000002269 spontaneous effect Effects 0.000 claims description 5
- 229910052801 chlorine Inorganic materials 0.000 claims description 4
- 229910052740 iodine Inorganic materials 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims 2
- 238000005086 pumping Methods 0.000 claims 1
- 229910052761 rare earth metal Inorganic materials 0.000 abstract description 13
- 238000004020 luminiscence type Methods 0.000 abstract description 10
- 229910052736 halogen Inorganic materials 0.000 abstract description 8
- 150000002367 halogens Chemical class 0.000 abstract description 7
- 229910052783 alkali metal Inorganic materials 0.000 abstract description 6
- 150000001340 alkali metals Chemical class 0.000 abstract description 6
- 229910052777 Praseodymium Inorganic materials 0.000 abstract description 2
- 238000002834 transmittance Methods 0.000 abstract description 2
- 229910052693 Europium Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
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- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 description 4
- 239000003513 alkali Substances 0.000 description 4
- AIYUHDOJVYHVIT-UHFFFAOYSA-M caesium chloride Chemical compound [Cl-].[Cs+] AIYUHDOJVYHVIT-UHFFFAOYSA-M 0.000 description 4
- 238000000103 photoluminescence spectrum Methods 0.000 description 4
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- 230000005865 ionizing radiation Effects 0.000 description 2
- 229910001629 magnesium chloride Inorganic materials 0.000 description 2
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- 230000005855 radiation Effects 0.000 description 2
- 206010028980 Neoplasm Diseases 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
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- JJWKPURADFRFRB-UHFFFAOYSA-N carbonyl sulfide Chemical compound O=C=S JJWKPURADFRFRB-UHFFFAOYSA-N 0.000 description 1
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- DPYXWFUVSMSNNV-UHFFFAOYSA-L europium(2+);diiodide Chemical compound [I-].[I-].[Eu+2] DPYXWFUVSMSNNV-UHFFFAOYSA-L 0.000 description 1
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- BLQJIBCZHWBKSL-UHFFFAOYSA-L magnesium iodide Chemical compound [Mg+2].[I-].[I-] BLQJIBCZHWBKSL-UHFFFAOYSA-L 0.000 description 1
- 229910001641 magnesium iodide Inorganic materials 0.000 description 1
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Abstract
Description
技术领域technical field
本发明涉及一种大体块高质量闪烁晶体及其制备方法与应用,属于晶体生长技术领域。The invention relates to a bulk high-quality scintillation crystal, a preparation method and application thereof, and belongs to the technical field of crystal growth.
背景技术Background technique
闪烁体是一类吸收高能粒子或射线后能够发射可见光的材料,在辐射探测领域发挥着十分重要的作用。在高能射线的照射下,闪烁体发出的可见光经过光电倍增管、光电二极管或雪崩光电二极管等转变为电学信号,从而对高能粒子或射线进行探测或成像。在医学上,闪烁体是核医学影像设备的核心部件,通过它可以快速诊断出人体各器官的病变、肿瘤组织的大小和位置。在行李安检、无损探伤、放射性探测等领域也发挥着不可替代的作用。同时闪烁体还是制造各类对撞机中电磁量能器的重要材料,它可以捕捉核反应后产生的各种粒子的信息,是人类探索微观世界及宇宙演变奥秘的重要工具。超快闪烁材料是指响应时间小于4ns(10-9s)的闪烁体材料。此类材料在脉冲辐射探测(Pulsed radiationdetection)、太阳中微子探测、反应动力学、惯性约束核聚变、宇宙射线研究中发挥着支柱性的作用。Scintillator is a kind of material that can emit visible light after absorbing high-energy particles or rays, and plays a very important role in the field of radiation detection. Under the irradiation of high-energy rays, the visible light emitted by the scintillator is converted into electrical signals through photomultiplier tubes, photodiodes or avalanche photodiodes, etc., so as to detect or image high-energy particles or rays. In medicine, scintillator is the core component of nuclear medicine imaging equipment, through which the lesions of various organs of the human body, the size and location of tumor tissue can be quickly diagnosed. It also plays an irreplaceable role in baggage security inspection, non-destructive testing, radioactive detection and other fields. At the same time, the scintillator is also an important material for the manufacture of electromagnetic calorimeters in various colliders. It can capture the information of various particles generated after nuclear reactions, and is an important tool for mankind to explore the mysteries of the microscopic world and the evolution of the universe. Ultrafast scintillator materials refer to scintillator materials with a response time of less than 4ns (10 -9 s). Such materials play a pivotal role in pulsed radiation detection, solar neutrino detection, reaction dynamics, inertial confinement fusion, and cosmic ray research.
尽管不同的应用对闪烁体会提出不同的要求,但闪烁体在绝大多数应用中都被用于检测电离辐射,所以要求闪烁体对电离辐射要有高的阻断能力,即要求闪烁体具有高密度并含有原子序数大的元素。Although different applications have different requirements for scintillators, scintillators are used to detect ionizing radiation in most applications, so scintillators are required to have high blocking ability to ionizing radiation, that is, scintillators are required to have high Density and contains elements with large atomic numbers.
目前常用的闪烁材料根据材料特性可分为有机闪烁体、无机闪烁体、复合闪烁体三大类,有机闪烁体能量分辨率好但是抗辐照强度较低,不利于长时间使用,无机闪烁体具有光产额高、响应速度快、衰减时间短、稳定性好等特点。复合闪烁体是将无机闪烁体作为溶质分散在有机闪烁体中制得的新型闪烁体。At present, the commonly used scintillator materials can be divided into three categories: organic scintillators, inorganic scintillators, and composite scintillators. It has the characteristics of high light yield, fast response speed, short decay time and good stability. Composite scintillator is a new type of scintillator prepared by dispersing inorganic scintillator as solute in organic scintillator.
无机闪烁体按照组成不同分为氧化物闪烁体、卤化物闪烁体,氧化物闪烁晶体有效原子序数大,物理化学性质稳定但是带隙较大,光产额普遍较低,能量分辨率差,因此目前卤化物闪烁晶体作为高光产额高能量分辨率的新型闪烁材料成为研究的热点。Inorganic scintillators are divided into oxide scintillators and halide scintillators according to different compositions. Oxide scintillators have large effective atomic numbers, stable physical and chemical properties but large band gaps, generally low light yields, and poor energy resolution. Therefore, At present, halide scintillation crystals have become a research hotspot as new scintillation materials with high light yield and high energy resolution.
卤化物闪烁晶体的优点是光产额高,能量分辨率好,组分简单,随着ABX3型的钙钛矿化合物的发展,逐渐发现了具有闪烁性能的钙钛矿闪烁晶体材料,并且通过对A BX3中X位的卤素进行取代可以实现对于晶体带隙的调控,满足在不同情况下的应用,卤素钙钛矿材料以结构的多样性及其优异的光电性质迅速成为下一代新型发光材料。The advantages of halide scintillation crystals are high light yield, good energy resolution, and simple components. With the development of ABX3-type perovskite compounds, perovskite scintillation crystal materials with scintillation properties have been gradually discovered. The substitution of the halogen at the X position in A BX3 can realize the regulation of the crystal band gap and meet the application in different situations. The halogen perovskite material has quickly become the next generation of new light-emitting materials due to its structural diversity and excellent optoelectronic properties.
发明内容SUMMARY OF THE INVENTION
针对现有卤素钙钛矿闪烁晶体高光产额、优秀的能量分辨率以及快速的衰减时间的优点,本发明提供一种大体块高质量闪烁晶体及其制备方法与应用。本发明得到的闪烁晶体为新型全无机卤素钙钛矿体块晶体,体块晶体尺寸大,存在CVL发光,满足医学成像对于快衰的要求。Aiming at the advantages of high light yield, excellent energy resolution and fast decay time of the existing halogen perovskite scintillation crystals, the present invention provides a generally bulk high-quality scintillation crystal and a preparation method and application thereof. The scintillation crystal obtained by the invention is a novel all-inorganic halogen perovskite bulk crystal, the bulk crystal is large in size, has CVL luminescence, and meets the requirements of medical imaging for rapid decay.
本发明通过改进工艺,使用布里基曼法首次生长出了大体块高质量无裂纹单晶。By improving the process, the present invention uses the Bridgman method to grow a bulk high-quality crack-free single crystal for the first time.
本发明的技术方案如下:The technical scheme of the present invention is as follows:
一种大体块高质量闪烁晶体,所述闪烁晶体为以CsMgX3晶体为基质,掺杂或不掺杂稀土元素和/或碱金属。A bulk high-quality scintillation crystal, the scintillation crystal is based on a CsMgX 3 crystal, doped or not doped with rare earth elements and/or alkali metals.
根据本发明优选的,所述的稀土元素可以为Eu、Pr、的一种。Preferably according to the present invention, the rare earth element may be one of Eu, Pr, and Pr.
本发明优选的,所述的稀土元素为Eu。Preferably in the present invention, the rare earth element is Eu.
Eu离子具有5d-4f跃迁,5d轨道完全裸露,受环境影响大,有利于提高闪烁响应能力,且Eu离子能与Mg等价取代,故Eu离子为最优选。Eu ion has a 5d-4f transition, and the 5d orbital is completely exposed, which is greatly affected by the environment, which is beneficial to improve the scintillation response ability, and Eu ion can be equivalently substituted with Mg, so Eu ion is the most preferred.
本发明优选的,所述的碱金属为6Li。Preferably in the present invention, the alkali metal is 6 Li.
6Li的存在会与中子发生核反应:该反应使得该晶体可以实现对热中子的探测。The presence of 6 Li will cause a nuclear reaction with neutrons: The reaction allows the crystal to detect thermal neutrons.
在上述稀土元素为Eu,碱金属为6Li的基础上进一步优选:On the basis that the above-mentioned rare earth element is Eu and the alkali metal is 6 Li, it is further preferred:
闪烁晶体的化学通式为:The general chemical formula of scintillation crystals is:
Csx 6Li1-xMgyEu1-yX3;其中0≤x≤1,0≤y≤1,X选自I、Br、Cl中的一种。Cs x 6 Li 1-x Mg y Eu 1-y X 3 ; wherein 0≤x≤1, 0≤y≤1, and X is selected from one of I, Br, and Cl.
晶体为钙钛矿晶体,X位的元素(I,Br,Cl)改变时时会影响晶体的带隙,进而影响晶体其他性能。The crystal is a perovskite crystal, and the change of the elements (I, Br, Cl) in the X position will affect the band gap of the crystal, and then affect other properties of the crystal.
当X选自I时,掺杂稀土元素的钙钛矿晶体为Csx 6Li1-xMgyEu1-yI3。该类晶体具有较小的带隙,预期具有高光产额和低能量分辨率,是一个非常有潜力的闪烁晶体。When X is selected from I, the rare earth element-doped perovskite crystal is Cs x 6 Li 1-x Mg y Eu 1-y I 3 . This type of crystal has a small band gap, is expected to have high light yield and low energy resolution, and is a very potential scintillation crystal.
当X选自Br时,掺杂稀土元素的钙钛矿晶体为Csx 6Li1-xMgyEu1-yBr3。When X is selected from Br, the rare earth element-doped perovskite crystal is Cs x 6 Li 1-x Mg y Eu 1-y Br 3 .
当X选自Cl时,掺杂稀土元素的钙钛矿晶体为Csx 6Li1-xMgyEu1-yCl3。When X is selected from Cl, the rare earth element-doped perovskite crystal is Cs x 6 Li 1-x Mg y Eu 1-y Cl 3 .
根据本发明优选的,当x=1,0<y<1时,所述闪烁晶体为掺杂稀土元素的钙钛矿晶体。Preferably according to the present invention, when x=1, 0<y<1, the scintillation crystal is a rare earth element doped perovskite crystal.
根据本发明优选的,当x=1,0<y<1时,所述掺杂稀土元素的钙钛矿晶体选自以下其中之一:CsMgyI3:Eu1-y、CsMgy Br 3:Eu1-y、CsMgy Cl3:Eu1-y。Preferably according to the present invention, when x=1, 0<y<1, the rare earth element-doped perovskite crystal is selected from one of the following: CsMg y I 3 :Eu 1-y , CsMg y Br 3 :Eu 1-y , CsMg y Cl 3 :Eu 1-y .
根据本发明优选的,当0<x<1,y=1时,所述闪烁晶体为掺杂碱金属的钙钛矿晶体。Preferably according to the present invention, when 0<x<1 and y=1, the scintillation crystal is an alkali metal-doped perovskite crystal.
当X选自I时,掺杂碱金属的钙钛矿晶体为CsxMgI3:6Li1-x。When X is selected from I, the alkali metal-doped perovskite crystal is Cs x MgI 3 : 6 Li 1-x .
当X选自Br时,掺杂碱金属的钙钛矿晶体为CsxMgBr3:6Li1-x。When X is selected from Br, the alkali metal-doped perovskite crystal is Cs x MgBr 3 : 6 Li 1-x .
当X选自Cl时,掺杂碱金属的钙钛矿晶体为CsxMgCl3:6Li1-x。When X is selected from Cl, the alkali metal-doped perovskite crystal is Cs x MgCl 3 : 6 Li 1-x .
CsMgCl3具备CVL发光,具有极快的衰减时间。掺入6Li后,可以实现γ射线、中子双探测。 CsMgCl3 possesses CVL luminescence with extremely fast decay time. After doping with 6 Li, double detection of γ-ray and neutron can be realized.
根据本发明优选的,当0<x<1,y=1时,所述掺杂稀土元素的钙钛矿晶体选自以下其中之一:CsxMgI3:6Li1-x、CsxMgBr3:6Li1-x、CsxMgCl3:6Li1-x。Preferably according to the present invention, when 0<x<1, y=1, the rare earth element-doped perovskite crystal is selected from one of the following: Cs x MgI 3 : 6 Li 1-x , Cs x MgBr 3 : 6 Li 1-x , Cs x MgCl 3 : 6 Li 1-x .
根据本发明优选的,当x=1,y=1时,所述闪烁晶体为CsMgX3,X选自I、Br、Cl中的一种。Preferably according to the present invention, when x=1, y=1, the scintillation crystal is CsMgX 3 , and X is selected from one of I, Br, and Cl.
根据本发明优选的,当0≤x≤1,0≤y≤1,x≠1,y≠1,闪烁晶体Csx 6Li1-xMgyEu1-yX3为稀土元素和碱金属共同掺杂晶体,可以在中子、γ射线辐照下发光,实现对中子以及γ射线的双探测。Preferably according to the present invention, when 0≤x≤1, 0≤y≤1, x≠1, y≠1, the scintillation crystal Cs x 6 Li 1-x Mg y Eu 1-y X 3 is a rare earth element and an alkali metal Co-doped crystals can emit light under the irradiation of neutrons and gamma rays, realizing dual detection of neutrons and gamma rays.
本发明第二个目的是提供一种大体块高质量闪烁晶体的制备方法。The second object of the present invention is to provide a method for preparing a substantially bulk high-quality scintillation crystal.
针对现有闪烁晶体潮解性较强,且易沿垂直生长面周期性开裂,本发明通过改进工艺,使用布里基曼法首次生长出了大体块高质量无裂纹单晶。Aiming at the strong deliquescence of the existing scintillation crystal and easy periodic cracking along the vertical growth plane, the present invention uses the Bridgman method to grow a bulk high-quality crack-free single crystal for the first time by improving the process.
一种大体块高质量闪烁晶体的制备方法,包括步骤如下:A method for preparing a bulk high-quality scintillation crystal, comprising the following steps:
1)按化学计量比,在手套箱中将CsX和MgX2混合均匀,混合时掺入或不掺入6LiX和/或EuX2,得到混合物料,将混合物料装入石英管中,然后抽真空、密封;1) According to the stoichiometric ratio, mix CsX and MgX 2 uniformly in a glove box, with or without 6 LiX and/or EuX 2 , to obtain a mixed material, put the mixed material into a quartz tube, and then pump vacuum, sealing;
2)将密封后的石英管放到电阻炉中,以升温-降温-升温的方式循环三次后,在400-680℃下恒温8-15小时,降温至室温,得到多晶料;2) put the sealed quartz tube in a resistance furnace, circulate three times in a heating-cooling-heating manner, keep a constant temperature at 400-680°C for 8-15 hours, and cool down to room temperature to obtain a polycrystalline material;
3)将含多晶料的石英管放入坩埚下降炉中,升温至300-680℃,保温8-15小时,调整石英管位置,使石英管底部自发成核区或接种区位置的温度高于熔点1-5℃,单晶生长炉内的温度梯度为5–15℃/cm,然后以0.03-0.05mm/h的速度缓慢下降石英管,同时,保持生长温度不变,待生长结束后,将生长炉温度先降温至180-220℃,然后自然冷却至室温,即得大体块高质量闪烁晶体。3) Put the quartz tube containing the polycrystalline material into the crucible descending furnace, heat up to 300-680 ° C, keep the temperature for 8-15 hours, adjust the position of the quartz tube, so that the temperature of the spontaneous nucleation zone or the inoculation zone at the bottom of the quartz tube is high. At the melting point of 1-5°C, the temperature gradient in the single crystal growth furnace is 5-15°C/cm, and then the quartz tube is slowly lowered at a speed of 0.03-0.05mm/h. At the same time, the growth temperature is kept unchanged. After the growth is completed , the temperature of the growth furnace is first cooled to 180-220° C., and then naturally cooled to room temperature, so as to obtain roughly high-quality scintillation crystals.
根据本发明优选的,步骤1)中,抽真空后的真空度为10–6mbar。Preferably according to the present invention, in step 1), the degree of vacuum after vacuuming is 10 −6 mbar.
根据本发明优选的,步骤2)中,升温-降温-升温的方式具体为:先以50-100℃/h的速率升温至400-650℃,然后以30-50℃/h的速率降温100-150℃,再以50-100℃/h的速率升温至500-650℃,循环三次。使反应充分进行,确保多晶料的组分均匀。Preferably according to the present invention, in step 2), the heating-cooling-heating method is specifically: firstly heating up to 400-650°C at a rate of 50-100°C/h, and then cooling down 100°C at a rate of 30-50°C/h -150°C, and then heated to 500-650°C at a rate of 50-100°C/h for three cycles. Allow the reaction to proceed sufficiently to ensure that the composition of the polycrystalline material is uniform.
根据本发明优选的,步骤2)中,降温至室温的降温速率为1-15℃/h。Preferably according to the present invention, in step 2), the cooling rate of cooling to room temperature is 1-15°C/h.
本发明的制备方法得到了直径为10-20mm大体块、无裂纹、无潮解的体块单晶。The preparation method of the present invention obtains a bulk single crystal with a diameter of 10-20 mm, no crack and no deliquescence.
一种大体块高质量闪烁晶体的应用,用于国防、医疗、安检、核不扩散等领域实现中子探测或中子、γ射线双探测。The utility model relates to an application of a high-quality scintillation crystal of a large block, and is used in the fields of national defense, medical treatment, security inspection, nuclear non-proliferation and the like to realize neutron detection or neutron and gamma ray dual detection.
本发明新型全无机卤素钙钛矿体块晶体发光原理:The luminescence principle of the novel all-inorganic halogen perovskite bulk crystal of the present invention:
CsMgI3晶体在受到外界γ射线激发时会发生电子的跃迁,电子从价带跃迁至导带并吸收γ射线的能量,跃迁之后的电子属于高能电子处于不稳定状态,会发生向价带的退激同时能量以光子的形式放出,该过程就是该晶体的闪烁过程。根据对这一过程放出的光子的分析就可以实现对γ射线的分析。When the CsMgI3 crystal is excited by external γ-rays, electron transitions will occur. The electrons transition from the valence band to the conduction band and absorb the energy of the γ-rays. The electrons after the transition belong to high-energy electrons and are in an unstable state, and de-excitation to the valence band will occur. At the same time, the energy is released in the form of photons, and this process is the scintillation process of the crystal. According to the analysis of the photons emitted by this process, the analysis of gamma rays can be realized.
CsMgI3:Eu晶体中Eu离子的进入会在晶体的价带与导带之间形成新的杂质能级,这样晶体受激时会跃迁到能量更低的杂质能级,相同的能量激发的电子更多,退激时放出的光子就越多,晶体的光产额就越大,同时闪烁效率也越高,响应能力越好。CsMgI 3 : The entry of Eu ions in the Eu crystal will form a new impurity energy level between the valence band and the conduction band of the crystal, so that when the crystal is excited, it will transition to a lower energy impurity energy level, and the electrons excited by the same energy More, the more photons are released when de-excited, the greater the light yield of the crystal, the higher the scintillation efficiency, and the better the responsiveness.
CsMgCl3晶体除与CsMgI3晶体相同具有电子价带导带之间的跃迁之外,还具有芯带到价带的电子跃迁,该过程同样会产生能量的吸收以及放出,并且由于发生的区域在芯带与价带之间,因此时间极短,该过程就是CsMgCl3晶体的CVL发光过程。CsMgCl3 crystal not only has the same transition between electron valence band and conduction band as CsMgI3 crystal, but also has electronic transition between core band and valence band. This process also produces energy absorption and release, and because the region that occurs is in the core band and the valence band, so the time is very short, this process is the CVL luminescence process of CsMgCl3 crystal.
当晶体为6Li xCs1-xMgCl3时,由于6Li的存在使得晶体会与热中子发生核反应::该反应会将中子的能量转化为电子的能量并在随后的退激过程中放出光子,由于该过程涉及的步骤较多通常时间跨度较CVL的时间长,通过对两种信号的时间分析就可以实现对于中子/γ信号的区分,从而实现中子/γ双探测。When the crystal is 6 Li xCs1-xMgCl3, due to the existence of 6Li, the crystal will undergo a nuclear reaction with thermal neutrons: This reaction converts the energy of neutrons into the energy of electrons and emits photons in the subsequent de-excitation process. Because this process involves more steps, the time span is usually longer than that of CVL. The differentiation of neutron/gamma signals can be achieved, thereby realizing neutron/gamma dual detection.
本发明的优点及技术特点:Advantages and technical features of the present invention:
1、本发明的闪烁晶体为新型全无机卤素钙钛矿体块晶体,体块晶体尺寸大,晶体直径为10-25mm,晶体质量好,透过率高、折射率小。1. The scintillation crystal of the present invention is a novel all-inorganic halogen perovskite bulk crystal, the bulk crystal size is large, the crystal diameter is 10-25mm, the crystal quality is good, the transmittance is high, and the refractive index is small.
2、本发明的闪烁晶体具有芯价发光,衰减时间极短,只有几纳秒,具有此类发光的闪烁晶体可实现中子、γ射线双探测。2. The scintillation crystal of the present invention has core-valence luminescence, and the decay time is extremely short, only a few nanoseconds. The scintillation crystal with such luminescence can realize double detection of neutrons and gamma rays.
3、本发明的闪烁晶体含有重离子,具有高原子序数和较小带隙,是非常有应用前景的闪烁晶体。3. The scintillation crystal of the present invention contains heavy ions, has a high atomic number and a small band gap, and is a very promising scintillation crystal.
附图说明Description of drawings
图1为实施例1得到的直径15mm的CsMg0.99Eu0.01I3晶体及横截面切片照片,a为CsMg0.99Eu0.01I3闪烁晶体照片,b为切割后晶片的照片;Fig. 1 is the CsMg 0.99 Eu 0.01 I 3 crystal with a diameter of 15 mm obtained in Example 1 and the photo of the cross-sectional slice, a is the photo of the CsMg 0.99 Eu 0.01 I 3 scintillation crystal, and b is the photo of the wafer after cutting;
图2为实施例1得到的直径15mm的CsMg0.99Eu0.01I3晶体研磨成粉末测得的粉末XRD图谱;Fig. 2 is the powder XRD pattern measured by grinding the CsMg 0.99 Eu 0.01 I crystal with a diameter of 15 mm obtained in Example 1 into powder;
图3为实施例1得到的直径15mm的CsMg0.99Eu0.01I3晶体1%光致发光图谱;Fig. 3 is the CsMg 0.99 Eu 0.01 I 3 crystal 1% photoluminescence spectrum with a diameter of 15 mm obtained in Example 1;
图4为实施例2得到的CsMg0.95Eu0.05Cl3晶体照片;Fig. 4 is the crystal photograph of CsMg 0.95 Eu 0.05 Cl 3 obtained in Example 2;
图5为实施例2得到的CsMg0.95Eu0.05Cl3晶体光致发光图谱;Fig. 5 is the CsMg 0.95 Eu 0.05 Cl 3 crystal photoluminescence spectrum obtained in Example 2;
图6为实施例3得到的直径12mm的CsMgCl3晶体照片;Fig. 6 is the CsMgCl crystal photograph of the diameter 12mm obtained in Example 3 ;
图7为实施例3得到的直径12mm的CsMgCl3晶体研成粉末测得的粉末XRD图谱;Fig. 7 is the powder XRD pattern measured by grinding the CsMgCl crystal with a diameter of 12 mm obtained in Example 3 into powder;
图8为实施例4得到的Cs0.99 6Li0.01 MgI3闪烁晶体照片。8 is a photograph of the Cs 0.99 6 Li 0.01 MgI 3 scintillation crystal obtained in Example 4.
具体实施方式Detailed ways
下面结合实施例及附图对本发明做进一步说明。The present invention will be further described below with reference to the embodiments and the accompanying drawings.
实施例1Example 1
CsMg0.99Eu0.01I3体块晶体的制备,步骤如下:The preparation of CsMg 0.99 Eu 0.01 I 3 bulk crystal, the steps are as follows:
1)在手套箱中将CsI,MgI2和EuI2按化学计量比混合均匀,装入石英管中密封,真空度达10–6mbar。1) Mix CsI, MgI 2 and EuI 2 uniformly in a stoichiometric ratio in a glove box, put into a quartz tube and seal, and the vacuum degree reaches 10 -6 mbar.
2)将密封后的石英管放到电阻炉中,以100℃/h的速率升温至450℃,然后以50℃/h的速率降温100℃,再以100℃/h的速率升温至450℃,循环三次后,在450℃下恒温10小时,然后以15℃/h的速率降至25℃,即可得到CsMg0.99Eu0.01I3多晶;2) Put the sealed quartz tube into a resistance furnace, heat up to 450°C at a rate of 100°C/h, then cool down by 100°C at a rate of 50°C/h, and then heat up to 450°C at a rate of 100°C/h , after three cycles, the temperature was kept at 450 °C for 10 hours, and then decreased to 25 °C at a rate of 15 °C/h to obtain CsMg 0.99 Eu 0.01 I 3 polycrystalline;
3)将含CsMg0.99Eu0.01I3多晶的石英管放入坩埚下降炉中,升温至420℃,保温10小时,调整石英管位置,使石英管底部自发成核区或接种区位置的温度高于熔点1-5℃,单晶生长炉内的温度梯度为5℃/cm,然后以0.3mm/h的速度缓慢降低石英管,同时,保持生长温度不变。待生长结束后,将生长炉温度以15℃/h降至200℃,然后自然冷却至30℃。3) Put the quartz tube containing CsMg 0.99 Eu 0.01 I 3 polycrystalline into the crucible descending furnace, heat up to 420 ° C, keep the temperature for 10 hours, adjust the position of the quartz tube, and make the temperature of the spontaneous nucleation zone at the bottom of the quartz tube or the temperature of the inoculation zone. Above the melting point of 1-5 °C, the temperature gradient in the single crystal growth furnace is 5 °C/cm, and then the quartz tube is slowly lowered at a speed of 0.3 mm/h, while keeping the growth temperature unchanged. After the growth, the temperature of the growth furnace was lowered to 200°C at 15°C/h, and then cooled to 30°C naturally.
取出石英管,用线切割机切开管壁,即得到直径为15mm,高质量的CsMg0.99Eu0.01I3闪烁晶体。The quartz tube was taken out, and the tube wall was cut with a wire cutting machine to obtain a high-quality CsMg 0.99 Eu 0.01 I 3 scintillation crystal with a diameter of 15 mm.
实施例1制得的CsMg0.99Eu0.01I3晶体及横截面切片照片如图1所示。从照片中可以看出本发明得到的晶体为体块晶体,并且尺寸大。Figure 1 shows the CsMg 0.99 Eu 0.01 I 3 crystal obtained in Example 1 and the photo of its cross-section. It can be seen from the photographs that the crystals obtained by the present invention are bulk crystals and are large in size.
将所得晶体研磨成粉末进行粉末XRD衍射得到的结果如图2所示。The results obtained by grinding the obtained crystals into powders and performing powder XRD diffraction are shown in FIG. 2 .
该晶体的光致发光谱图如图3所示,从图3中可以看出560nm左右发光峰为Eu2+离子5d-4f跃迁导致。The photoluminescence spectrum of the crystal is shown in FIG. 3 , and it can be seen from FIG. 3 that the luminescence peak around 560 nm is caused by the 5d-4f transition of Eu 2+ ions.
实施例2Example 2
CsMg0.95Eu0.05Cl3体块晶体的制备,步骤如下:The preparation of bulk crystal of CsMg 0.95 Eu 0.05 Cl 3 is as follows:
1)在手套箱中将CsCl,MgCl2和EuCl2按化学计量比混合均匀,装入石英管中密封,真空度达10-6mbar。1) Mix CsCl, MgCl2 and EuCl2 uniformly in a stoichiometric ratio in a glove box, put it into a quartz tube and seal it, and the vacuum degree can reach 10 -6 mbar.
2)将密封后的石英管放到电阻炉中,以100℃/h的速率升温至650℃,然后以50℃/h的速率降温100℃,再以100℃/h的速率升温至650℃,循环三次后,在650℃下恒温10小时,然后以15℃/h的速率降至25℃,即可得到CsMg0.95Eu0.05Cl3多晶;2) Put the sealed quartz tube into a resistance furnace, heat up to 650°C at a rate of 100°C/h, then cool down by 100°C at a rate of 50°C/h, and then heat up to 650°C at a rate of 100°C/h , after three cycles, the temperature was kept at 650 °C for 10 hours, and then decreased to 25 °C at a rate of 15 °C/h to obtain CsMg 0.95 Eu 0.05 Cl 3 polycrystalline;
3)将含CsMg0.95Eu0.05Cl3多晶的石英管放入坩埚下降炉中,升温至615℃,保温10小时,调整石英管位置,使石英管底部自发成核区或接种区位置的温度高于熔点1-5℃,单晶生长炉内的温度梯度为5℃/cm,然后以0.3mm/h的速度缓慢降低石英管,同时,保持生长温度不变。待生长结束后,将生长炉温度以15℃/h降至200℃,然后自然冷却至30℃。3) Put the quartz tube containing CsMg 0.95 Eu 0.05 Cl 3 polycrystalline into the crucible descending furnace, heat up to 615 ° C, keep the temperature for 10 hours, adjust the position of the quartz tube, and make the temperature of the spontaneous nucleation zone at the bottom of the quartz tube or the temperature of the inoculation zone. Above the melting point of 1-5 °C, the temperature gradient in the single crystal growth furnace is 5 °C/cm, and then the quartz tube is slowly lowered at a speed of 0.3 mm/h, while keeping the growth temperature unchanged. After the growth, the temperature of the growth furnace was lowered to 200°C at 15°C/h, and then cooled to 30°C naturally.
4)取出石英管,用线切割机切开管壁,即得到直径为15mm,高质量的CsMg0.95Eu0.05Cl3闪烁晶体;4) Take out the quartz tube and cut the tube wall with a wire cutting machine to obtain a 15mm diameter, high-quality CsMg 0.95 Eu 0.05 Cl scintillation crystal;
实施例2制得的CsMg0.95Eu0.05Cl3晶体照片如图4所示。The crystal photo of CsMg 0.95 Eu 0.05 Cl 3 prepared in Example 2 is shown in FIG. 4 .
CsMg0.95Eu0.05Cl3晶体的光致发光谱图如图5所示,从图中可以看出,CsMg0.95Eu0.05Cl3只有一个发光峰,位于480nm左右,为典型Eu2+离子发光峰。The photoluminescence spectrum of CsMg 0.95 Eu 0.05 Cl 3 crystal is shown in Figure 5. It can be seen from the figure that CsMg 0.95 Eu 0.05 Cl 3 has only one luminescence peak, which is located at about 480 nm, which is a typical Eu 2+ ion luminescence peak.
实施例3Example 3
CsMgCl3体块晶体的制备,步骤如下:The preparation of CsMgCl bulk crystal, the steps are as follows:
1)在手套箱中将CsCl,MgCl2按化学计量比混合均匀,装入石英管中密封,真空度达10–6mbar。1) Mix CsCl and MgCl2 uniformly according to the stoichiometric ratio in the glove box, put it into a quartz tube and seal it, and the vacuum degree can reach 10 -6 mbar.
2)将密封后的石英管放到电阻炉中,以100℃/h的速率升温至650℃,然后以50℃/h的速率降温100℃,再以100℃/h的速率升温至650℃,循环三次后,在650℃下恒温10小时,然后以15℃/h的速率降至25℃,即可得到CsMgCl3多晶;2) Put the sealed quartz tube in a resistance furnace, heat up to 650°C at a rate of 100°C/h, then cool down by 100°C at a rate of 50°C/h, and then heat up to 650°C at a rate of 100°C/h , after three cycles, keep the temperature at 650 °C for 10 hours, and then drop to 25 °C at a rate of 15 °C/h to obtain CsMgCl3 polycrystalline;
3)将含CsMgCl3多晶的石英管放入坩埚下降炉中,升温至615℃,保温10小时,调整石英管位置,使石英管底部自发成核区或接种区位置的温度高于熔点1-5℃,单晶生长炉内的温度梯度为5℃/cm,然后以0.3mm/h的速度缓慢降低石英管,同时,保持生长温度不变。待生长结束后,将生长炉温度以15℃/h降至200℃,然后自然冷却至30℃。3) Put the quartz tube containing CsMgCl polycrystalline into the crucible descending furnace, heat up to 615 ° C, keep the temperature for 10 hours, adjust the position of the quartz tube, so that the temperature of the spontaneous nucleation zone at the bottom of the quartz tube or the position of the inoculation zone is higher than the melting point by 1- 5 °C, the temperature gradient in the single crystal growth furnace is 5 °C/cm, and then the quartz tube is slowly lowered at a speed of 0.3 mm/h, and at the same time, the growth temperature is kept unchanged. After the growth, the temperature of the growth furnace was lowered to 200°C at 15°C/h, and then cooled to 30°C naturally.
4)取出石英管,用线切割机切开管壁,即得到直径为15mm,高质量的CsMgCl3闪烁晶体;4) Take out the quartz tube and cut the tube wall with a wire cutting machine to obtain a CsMgCl scintillation crystal with a diameter of 15mm and high quality;
实施例3制得的CsMgCl3闪烁晶体照片如图6所示。The photo of the CsMgCl3 scintillation crystal prepared in Example 3 is shown in FIG. 6 .
将晶体研磨成粉末进行粉末XRD衍射结果如图7所示。The crystals were ground into powder and the powder XRD diffraction results were shown in Figure 7.
实施例4Example 4
Cs0.99 6Li0.01 Mg0.99Eu0.01I3体块晶体的制备,步骤如下:The preparation of bulk crystal of Cs 0.99 6 Li 0.01 Mg 0.99 Eu 0.01 I 3 is as follows:
1)在手套箱中将CsI,MgI2,EuI2和6LiI按化学计量比混合均匀,装入石英管中密封,真空度达10–6mbar。1) Mix CsI, MgI2, EuI2 and 6LiI according to the stoichiometric ratio uniformly in the glove box, put it into a quartz tube and seal it with a vacuum of 10–6 mbar.
2)将密封后的石英管放到电阻炉中,以50–100℃/h的速率升温至600-650℃,然后以30–50℃/h的速率降温100–150℃,再以50–100℃/h的速率升温至600-650℃,循环三次后,在600-650℃下恒温10小时,然后以1-15℃/h的速率降至25℃,即可得到Cs0.99 6Li0.01Mg0.99Eu0.01I3多晶;2) Put the sealed quartz tube into a resistance furnace, heat it up to 600-650°C at a rate of 50-100°C/h, then cool it down by 100-150°C at a rate of 30-50°C/h, and then at a rate of 50- The temperature was raised to 600-650°C at a rate of 100°C/h, and after three cycles, the temperature was kept at 600-650°C for 10 hours, and then lowered to 25°C at a rate of 1-15°C/h to obtain Cs 0.99 6 Li 0.01 Mg 0.99 Eu 0.01 I 3 polycrystalline;
3)将含Cs0.99 6Li0.01 Mg0.99Eu0.01I3多晶的石英管放入坩埚下降炉中,升温至450-650℃,保温10小时,调整石英管位置,使石英管底部自发成核温度或接种温度在熔点附近,温度梯度为5–15℃/cm,然后以0.3-0.5mm/h的速度缓慢降低石英管,同时,保持生长温度不变。待生长结束后,将生长炉温度以15℃/h降至200℃,然后自然冷却至30℃。3) Put the quartz tube containing Cs 0.99 6 Li 0.01 Mg 0.99 Eu 0.01 I 3 polycrystalline into the crucible descending furnace, heat it up to 450-650° C., keep the temperature for 10 hours, adjust the position of the quartz tube, and make the bottom of the quartz tube spontaneously nucleate The temperature or seeding temperature is around the melting point, the temperature gradient is 5–15 °C/cm, and then the quartz tube is slowly lowered at a rate of 0.3–0.5 mm/h, while keeping the growth temperature constant. After the growth, the temperature of the growth furnace was lowered to 200°C at 15°C/h, and then cooled to 30°C naturally.
4)取出石英管,用线切割机切开管壁,即得到直径为10-20mm,高质量的Cs0.99 6Li0.01Mg0.99Eu0.01I3闪烁晶体。4) Take out the quartz tube and cut the tube wall with a wire cutting machine to obtain a high-quality Cs 0.99 6 Li 0.01 Mg 0.99 Eu 0.01 I 3 scintillation crystal with a diameter of 10-20 mm.
实施例4制得的Cs0.99 6Li0.01 Mg0.99Eu0.01I3闪烁晶体照片如图8所示。The photo of the Cs 0.99 6 Li 0.01 Mg 0.99 Eu 0.01 I 3 scintillation crystal prepared in Example 4 is shown in FIG. 8 .
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