CN113512757A - Large-block high-quality scintillation crystal and preparation method and application thereof - Google Patents
Large-block high-quality scintillation crystal and preparation method and application thereof Download PDFInfo
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- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
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Abstract
The invention relates to a large-block high-quality scintillation crystal and a preparation method and application thereof, wherein the scintillation crystal is CsMgX3The crystal is a substrate, and is doped or not doped with rare earth elements and/or alkali metals; the rare earth element is one of Eu and Pr; the alkali metal is6Li, the bulk high quality crack-free single crystal was first grown using the Bridgman method. The scintillation crystal obtained by the invention is a novel all-inorganic halogen perovskite bulk crystal, and the scintillation crystal is a novel all-inorganic halogen perovskite bulk crystal, and has the advantages of large bulk crystal size, crystal diameter of 10-25mm, good crystal quality, high transmittance and small refractive index. The decay time is very short, only a few nanoseconds, the scintillation crystal with the luminescence can realize the dual detection of neutrons and gamma rays, has high atomic number and smaller band gap, and is very appliedA scintillation crystal of the foreground.
Description
Technical Field
The invention relates to a large-block high-quality scintillation crystal and a preparation method and application thereof, belonging to the technical field of crystal growth.
Background
Scintillators are a class of materials capable of emitting visible light after absorbing high-energy particles or rays, and play an important role in the field of radiation detection. Under the irradiation of high-energy rays, visible light emitted by the scintillator is converted into an electrical signal through a photomultiplier tube, a photodiode or an avalanche photodiode and the like, so that high-energy particles or rays are detected orAnd (6) imaging. In medicine, a scintillator is a core component of a nuclear medicine imaging apparatus, and through it, a lesion of each organ of a human body, the size and the position of a tumor tissue can be rapidly diagnosed. The method also plays an irreplaceable role in the fields of baggage security inspection, nondestructive inspection, radioactive detection and the like. Meanwhile, the scintillator is an important material for manufacturing electromagnetic energy measuring devices in various colliders, can capture information of various particles generated after nuclear reaction, and is an important tool for human to explore the mysterious evolution of the microcosmic world and the universe. Ultrafast scintillating material refers to a response time of less than 4ns (10)-9s) scintillator material. The material plays a supporting role in Pulsed radiation detection (Pulsed radiation detection), solar neutrino detection, reaction kinetics, inertial confinement nuclear fusion and cosmic ray research.
Although different applications may impose different requirements on the scintillator, the scintillator is used for detecting ionizing radiation in most applications, so that the scintillator is required to have high capability of blocking ionizing radiation, i.e. the scintillator is required to have high density and contain elements with large atomic number.
The currently common scintillating materials can be classified into three categories, namely organic scintillators, inorganic scintillators and composite scintillators according to the material characteristics, the organic scintillators have good energy resolution but low irradiation resistance intensity and are not beneficial to long-time use, and the inorganic scintillators have the characteristics of high light yield, high response speed, short decay time, good stability and the like. The composite scintillator is a novel scintillator prepared by dispersing an inorganic scintillator serving as a solute in an organic scintillator.
The inorganic scintillators are classified into oxide scintillators and halide scintillators according to different compositions, the oxide scintillators have large effective atomic number, stable physical and chemical properties but large band gaps, generally low light yield and poor energy resolution, so that the halide scintillators serving as novel scintillating materials with high light yield and high energy resolution become the research hotspot at present.
The halide scintillation crystal has the advantages of high light yield, good energy resolution and simple components, and with the development of ABX3 type perovskite compounds, a perovskite scintillation crystal material with scintillation property is gradually discovered, and the adjustment and control of crystal band gap can be realized by substituting halogen at X position in A BX3, so that the application under different conditions is met, and the halogen perovskite material rapidly becomes a next-generation novel luminescent material by structural diversity and excellent photoelectric property.
Disclosure of Invention
Aiming at the advantages of high light yield, excellent energy resolution and rapid decay time of the existing halogen perovskite scintillation crystal, the invention provides a large-block high-quality scintillation crystal and a preparation method and application thereof. The scintillation crystal obtained by the invention is a novel all-inorganic halogen perovskite bulk crystal, has large bulk crystal size and CVL luminescence, and meets the requirements of medical imaging on fast attenuation.
The invention firstly grows the massive high-quality crack-free single crystal by using the Bridgman method through improving the process.
The technical scheme of the invention is as follows:
a large-block high-quality scintillation crystal is CsMgX3The crystal is a matrix, and is doped or not doped with rare earth elements and/or alkali metals.
According to the present invention, preferably, the rare earth element may be one of Eu and Pr.
Preferably, the rare earth element is Eu.
Eu ions have 5d-4f transition, 5d orbits are completely exposed, the influence of the environment is large, the scintillation response capability is favorably improved, and the Eu ions can be substituted with Mg in an equivalent manner, so that the Eu ions are the most preferable.
Preferably, the alkali metal is6Li。
6The presence of Li will react with neutrons:
the reaction allows the crystal to achieve detection of thermal neutrons.
The rare earth element is Eu, and the alkali metal is6Further preferred on the basis of Li is:
the scintillation crystal has the chemical formula:
Csx 6Li1-xMgyEu1-yX3(ii) a Wherein X is more than or equal to 0 and less than or equal to 1, y is more than or equal to 0 and less than or equal to 1, and X is selected from one of I, Br and Cl.
The crystal is a perovskite crystal, and the change of the X-site elements (I, Br, Cl) can affect the band gap of the crystal, thereby affecting other properties of the crystal.
When X is selected from I, the perovskite crystal doped with the rare earth element is Csx 6Li1-xMgyEu1-yI3. The crystal has a smaller band gap, is expected to have high light yield and low energy resolution, and is a scintillation crystal with very potential.
When X is selected from Br, the perovskite crystal doped with the rare earth element is Csx 6Li1-xMgyEu1-yBr3。
When X is Cl, the perovskite crystal doped with the rare earth element is Csx 6Li1-xMgyEu1-yCl3。
Preferably, according to the invention, when x is 1, 0 < y < 1, the scintillation crystal is a rare earth element doped perovskite crystal.
Preferably according to the present invention, when x is 1, 0 < y < 1, the rare earth element-doped perovskite crystal is selected from one of the following: CsMgyI3:Eu1-y、CsMgy Br 3:Eu1-y、CsMgy Cl3:Eu1-y。
Preferably, according to the invention, when 0 < x < 1 and y ═ 1, the scintillation crystal is an alkali metal doped perovskite crystal.
When X is selected from I, the perovskite crystal doped with alkali metal is CsxMgI3:6Li1-x。
When X is selected from Br, the perovskite crystal doped with alkali metal is CsxMgBr3:6Li1-x。
When X is selected from Cl, the perovskite crystal doped with alkali metal is CsxMgCl3:6Li1-x。
CsMgCl3The light emitting diode has CVL light emission and extremely fast decay time. Incorporation of6After Li, the double detection of gamma rays and neutrons can be realized.
Preferably according to the invention, when 0 < x < 1 and y ═ 1, the rare earth element doped perovskite crystal is selected from one of the following: csxMgI3:6Li1-x、CsxMgBr3:6Li1-x、CsxMgCl3:6Li1-x。
Preferably, when x is 1 and y is 1, the scintillation crystal is CsMgX3And X is selected from one of I, Br and Cl.
According to the invention, it is preferred that when x is 0. ltoreq. 1, y is 0. ltoreq. 1, x.noteq.1, y.noteq.1, the scintillation crystal Csx 6Li1-xMgyEu1-yX3The crystal is a co-doped crystal of rare earth elements and alkali metals, can emit light under the irradiation of neutrons and gamma rays, and realizes dual detection of the neutrons and the gamma rays.
The second purpose of the invention is to provide a method for preparing a large-block high-quality scintillation crystal.
Aiming at the problems that the existing scintillation crystal has strong deliquescence and is easy to crack periodically along a vertical growth surface, the invention firstly grows a large block of high-quality crack-free single crystal by using a Bridgman method through an improved process.
A method for preparing a large-block high-quality scintillation crystal comprises the following steps:
1) CsX and MgX were mixed in a stoichiometric ratio in a glove box2Mixing uniformly, with or without adding6LiX and/or EuX2Filling the mixed material into a quartz tube, and then vacuumizing and sealing;
2) placing the sealed quartz tube into a resistance furnace, circulating for three times in a heating-cooling-heating mode, keeping the temperature at 400-680 ℃ for 8-15 hours, and cooling to room temperature to obtain a polycrystalline material;
3) putting a quartz tube containing polycrystalline materials into a crucible descending furnace, heating to the temperature of 300-680 ℃, preserving heat for 8-15 hours, adjusting the position of the quartz tube, enabling the temperature of a spontaneous nucleation area or an inoculation area at the bottom of the quartz tube to be 1-5 ℃ higher than a melting point, enabling the temperature gradient in a single crystal growth furnace to be 5-15 ℃/cm, then slowly descending the quartz tube at the speed of 0.03-0.05mm/h, keeping the growth temperature unchanged, after the growth is finished, firstly cooling the growth furnace to the temperature of 180-220 ℃, and then naturally cooling to the room temperature to obtain the large-block high-quality scintillation crystal.
Preferably, in step 1), the degree of vacuum after evacuation is 10–6mbar。
According to the present invention, in step 2), the heating-cooling-heating manner is specifically: the temperature is raised to 400-650 ℃ at the rate of 50-100 ℃/h, then the temperature is lowered to 100-150 ℃ at the rate of 30-50 ℃/h, and then the temperature is raised to 500-650 ℃ at the rate of 50-100 ℃/h, and the cycle is repeated for three times. The reaction is fully carried out, and the components of the polycrystalline material are ensured to be uniform.
Preferably, in step 2), the cooling rate of the temperature to room temperature is 1-15 ℃/h.
The preparation method of the invention obtains the bulk single crystal with the diameter of 10-20mm, no crack and no deliquescence.
The application of large-block high-quality scintillation crystal is used for implementing neutron detection or neutron and gamma ray double detection in the fields of national defense, medical treatment, security inspection and nuclear non-diffusion, etc.
The novel all-inorganic halogen perovskite bulk crystal luminescence principle of the invention is as follows:
when the CsMgI3 crystal is excited by external gamma rays, transition of electrons occurs, the electrons transit from a valence band to a conduction band and absorb the energy of the gamma rays, the electrons after the transition belong to high-energy electrons in an unstable state, and the electrons are subjected to excitation towards the valence band and simultaneously the energy is released in the form of photons, and the process is the scintillation process of the crystal. The analysis of gamma rays can be performed based on the analysis of photons emitted by this process.
CsMgI3: the entry of Eu ions into Eu crystals forms new impurity levels between the valence and conduction bands of the crystals, such that the crystals jump when excitedWhen the crystal is moved to an impurity energy level with lower energy, more electrons are excited by the same energy, more photons are emitted during the de-excitation, the higher the light yield of the crystal is, the higher the scintillation efficiency is, and the better the response capability is.
The CsMgCl3 crystal has the electron transition from the core band to the valence band in addition to the transition between the conduction bands of the electron valence band as in the CsMgI3 crystal, the process also generates the absorption and emission of energy, and the time is extremely short because the occurring region is between the core band and the valence band, and the process is the CVL luminescence process of the CsMgCl3 crystal.
When the crystal is6Li xCs1-xMgCl3, the presence of 6Li allows the crystal to react with thermal neutron nuclei: :
the reaction can convert the energy of neutrons into the energy of electrons and emit photons in the subsequent de-excitation process, and because the process involves more steps and generally has longer time span than that of CVL, the separation of neutron/gamma signals can be realized through the time analysis of the two signals, thereby realizing the dual detection of neutron/gamma.
The invention has the advantages and technical characteristics that:
1. the scintillation crystal is a novel all-inorganic halogen perovskite bulk crystal, the bulk crystal size is large, the crystal diameter is 10-25mm, the crystal quality is good, the transmittance is high, and the refractive index is small.
2. The scintillation crystal has core valence luminescence, the attenuation time is extremely short and is only a few nanoseconds, and the scintillation crystal with the luminescence can realize double detection of neutrons and gamma rays.
3. The scintillation crystal of the invention contains heavy ions, has high atomic number and smaller band gap, and is a scintillation crystal with great application prospect.
Drawings
FIG. 1 shows CsMg with a diameter of 15mm obtained in example 10.99Eu0.01I3Photographs of crystal and cross-sectional slices, a being CsMg0.99Eu0.01I3B is a photograph of the wafer after cutting;
FIG. 2 is CsMg with a diameter of 15mm obtained in example 10.99Eu0.01I3Grinding the crystal into powder to obtain a powder XRD pattern;
FIG. 3 shows CsMg with a diameter of 15mm obtained in example 10.99Eu0.01I3Crystalline 1% photoluminescence spectrum;
FIG. 4 shows CsMg obtained in example 20.95Eu0.05Cl3A crystal photograph;
FIG. 5 shows CsMg obtained in example 20.95Eu0.05Cl3A crystalline photoluminescence spectrum;
FIG. 6 shows CsMgCl with a diameter of 12mm obtained in example 33A crystal photograph;
FIG. 7 shows CsMgCl with a diameter of 12mm obtained in example 33Grinding the crystal into powder to obtain a powder XRD pattern;
FIG. 8 shows Cs obtained in example 40.99 6Li0.01 MgI3Scintillation crystal photographs.
Detailed Description
The present invention will be further described with reference to the following examples and accompanying drawings.
Example 1
CsMg0.99Eu0.01I3Bulk crystals were prepared by the following steps:
1) CsI, MgI in glove box2And EuI2Mixing at stoichiometric ratio, sealing in quartz tube with vacuum degree of 10–6mbar。
2) Putting the sealed quartz tube into a resistance furnace, heating to 450 ℃ at the speed of 100 ℃/h, then cooling to 100 ℃ at the speed of 50 ℃/h, heating to 450 ℃ at the speed of 100 ℃/h, circulating for three times, keeping the temperature at 450 ℃ for 10 hours, then cooling to 25 ℃ at the speed of 15 ℃/h to obtain CsMg0.99Eu0.01I3Polycrystal;
3) will contain CsMg0.99Eu0.01I3Putting the polycrystalline quartz tube into a crucible descending furnace, heating to 420 ℃, preserving heat for 10 hours, adjusting the position of the quartz tube,the temperature of the spontaneous nucleation area or the inoculation area at the bottom of the quartz tube is higher than the melting point by 1-5 ℃, the temperature gradient in the single crystal growth furnace is 5 ℃/cm, then the quartz tube is slowly reduced at the speed of 0.3mm/h, and meanwhile, the growth temperature is kept unchanged. After the growth is finished, the temperature of the growth furnace is reduced to 200 ℃ at a speed of 15 ℃/h, and then the growth furnace is naturally cooled to 30 ℃.
Taking out the quartz tube, and cutting the tube wall with a wire cutting machine to obtain high-quality CsMg with diameter of 15mm0.99Eu0.01I3And (4) scintillation crystals.
CsMg prepared in example 10.99Eu0.01I3The crystal and cross-sectional slice photographs are shown in FIG. 1. It can be seen from the photographs that the crystals obtained by the present invention are bulk crystals and are large in size.
The results obtained by grinding the obtained crystals into powder and performing powder XRD diffraction are shown in FIG. 2.
The photoluminescence spectrum of the crystal is shown in FIG. 3, and it can be seen from FIG. 3 that Eu represents a luminescence peak around 560nm2+Ion 5d-4f transition.
Example 2
CsMg0.95Eu0.05Cl3Bulk crystals were prepared by the following steps:
1) mixing CsCl, MgCl2 and EuCl2 at stoichiometric ratio in glove box, sealing in quartz tube under vacuum degree of 10-6mbar。
2) Putting the sealed quartz tube into a resistance furnace, heating to 650 ℃ at the speed of 100 ℃/h, then cooling to 100 ℃ at the speed of 50 ℃/h, heating to 650 ℃ at the speed of 100 ℃/h, circulating for three times, keeping the temperature at 650 ℃ for 10 hours, then cooling to 25 ℃ at the speed of 15 ℃/h to obtain CsMg0.95Eu0.05Cl3Polycrystal;
3) will contain CsMg0.95Eu0.05Cl3Placing the polycrystalline quartz tube into a crucible descending furnace, heating to 615 deg.C, maintaining for 10 hr, adjusting the position of the quartz tube to make the temperature of spontaneous nucleation region or inoculation region at the bottom of the quartz tube higher than melting point by 1-5 deg.C, controlling the temperature gradient in the single crystal growth furnace at 5 deg.C/cm, and controlling the temperature at 0.3mThe speed of m/h slowly reduces the quartz tube, and meanwhile, the growth temperature is kept unchanged. After the growth is finished, the temperature of the growth furnace is reduced to 200 ℃ at a speed of 15 ℃/h, and then the growth furnace is naturally cooled to 30 ℃.
4) Taking out the quartz tube, and cutting the tube wall with a wire cutting machine to obtain high-quality CsMg with diameter of 15mm0.95Eu0.05Cl3A scintillation crystal;
CsMg prepared in example 20.95Eu0.05Cl3The crystal photograph is shown in FIG. 4.
CsMg0.95Eu0.05Cl3The photoluminescence spectrum of the crystal is shown in FIG. 5, from which it can be seen that CsMg0.95Eu0.05Cl3Only one luminescence peak is positioned at about 480nm and is typical Eu2+Ion luminescence peak.
Example 3
CsMgCl3Bulk crystals were prepared by the following steps:
1) mixing CsCl and MgCl2 in a glove box at stoichiometric ratio, sealing in a quartz tube under vacuum degree of 10–6mbar。
2) Placing the sealed quartz tube into a resistance furnace, heating to 650 ℃ at the speed of 100 ℃/h, then cooling to 100 ℃ at the speed of 50 ℃/h, heating to 650 ℃ at the speed of 100 ℃/h, circulating for three times, keeping the temperature at 650 ℃ for 10 hours, and then cooling to 25 ℃ at the speed of 15 ℃/h to obtain CsMgCl3 polycrystal;
3) putting the CsMgCl3 polycrystal quartz tube into a crucible descending furnace, heating to 615 ℃, preserving the temperature for 10 hours, adjusting the position of the quartz tube to ensure that the temperature of a spontaneous nucleation area or an inoculation area at the bottom of the quartz tube is 1-5 ℃ higher than the melting point, the temperature gradient in a single crystal growth furnace is 5 ℃/cm, then slowly reducing the quartz tube at the speed of 0.3mm/h, and simultaneously keeping the growth temperature unchanged. After the growth is finished, the temperature of the growth furnace is reduced to 200 ℃ at a speed of 15 ℃/h, and then the growth furnace is naturally cooled to 30 ℃.
4) Taking out the quartz tube, and cutting the tube wall by using a wire cutting machine to obtain a CsMgCl3 scintillation crystal with the diameter of 15mm and high quality;
the photograph of the CsMgCl3 scintillation crystal prepared in example 3 is shown in FIG. 6.
The result of powder XRD diffraction by grinding the crystals into powder is shown in FIG. 7.
Example 4
Cs0.99 6Li0.01 Mg0.99Eu0.01I3Bulk crystals were prepared by the following steps:
1) CsI, MgI2, EuI2 and 6LiI were mixed homogeneously in a stoichiometric ratio in a glove box and sealed in a quartz tube at a vacuum of 10-6 mbar.
2) Placing the sealed quartz tube into a resistance furnace, heating to 600-650 ℃ at the speed of 50-100 ℃/h, then cooling to 100-150 ℃ at the speed of 30-50 ℃/h, heating to 600-650 ℃ at the speed of 50-100 ℃/h, circulating for three times, keeping the temperature at 600-650 ℃ for 10 hours, then cooling to 25 ℃ at the speed of 1-15 ℃/h, and obtaining the Cs0.99 6Li0.01Mg0.99Eu0.01I3Polycrystal;
3) will contain Cs0.99 6Li0.01 Mg0.99Eu0.01I3Putting the polycrystalline quartz tube into a crucible descending furnace, heating to 450-650 ℃, preserving the heat for 10 hours, adjusting the position of the quartz tube to ensure that the spontaneous nucleation temperature or the inoculation temperature at the bottom of the quartz tube is near the melting point, the temperature gradient is 5-15 ℃/cm, then slowly reducing the quartz tube at the speed of 0.3-0.5mm/h, and simultaneously keeping the growth temperature unchanged. After the growth is finished, the temperature of the growth furnace is reduced to 200 ℃ at a speed of 15 ℃/h, and then the growth furnace is naturally cooled to 30 ℃.
4) Taking out the quartz tube, and cutting the tube wall with a wire cutting machine to obtain high-quality Cs with diameter of 10-20mm0.99 6Li0.01Mg0.99Eu0.01I3And (4) scintillation crystals.
Cs obtained in example 40.99 6Li0.01 Mg0.99Eu0.01I3The scintillation crystal photograph is shown in fig. 8.
Claims (10)
1. A large-block high-quality scintillation crystal, its production methodThe scintillation crystal is CsMgX3The crystal is a substrate, and is doped or not doped with rare earth elements and/or alkali metals;
the rare earth element is one of Eu and Pr; preferably, the rare earth element is Eu;
the alkali metal is6Li。
2. The bulk high quality scintillation crystal of claim 1 wherein the rare earth element is Eu and the alkali metal is6Based on Li, the chemical general formula of the scintillation crystal is as follows:
Csx 6Li1-xMgyEu1-yX3(ii) a Wherein X is more than or equal to 0 and less than or equal to 1, y is more than or equal to 0 and less than or equal to 1, and X is selected from one of I, Br and Cl.
3. The substantial-block, high-quality scintillation crystal of claim 2,
when X is selected from I, the perovskite crystal doped with the rare earth element is Csx 6Li1-xMgyEu1-yI3；
When X is selected from Br, the perovskite crystal doped with the rare earth element is Csx 6Li1-xMgyEu1-yBr3；
When X is Cl, the perovskite crystal doped with the rare earth element is Csx 6Li1-xMgyEu1-yCl3。
4. The bulk high quality scintillation crystal of claim 2, wherein when x is 1, 0 < y < 1, the scintillation crystal is a rare earth element doped perovskite crystal; the rare earth element doped perovskite crystal is selected from one of the following: CsMgyI3:Eu1-y、CsMgyBr3:Eu1-y、CsMgyCl3:Eu1-y。
5. The gross block of claim 2The high-quality scintillation crystal is characterized in that when x is more than 0 and less than 1 and y is equal to 1, the scintillation crystal is a perovskite crystal doped with alkali metal; the rare earth element doped perovskite crystal is selected from one of the following: csxMgI3:6Li1-x、CsxMgBr3:6Li1-x、CsxMgCl3:6Li1-x。
6. The bulk high quality scintillation crystal of claim 2 wherein when x-1 and y-1, the scintillation crystal is CsMgX3And X is selected from one of I, Br and Cl.
7. The bulk high quality scintillation crystal of claim 2, wherein the scintillation crystal Cs is present when 0 ≦ x ≦ 1, 0 ≦ y ≦ 1, x ≠ 1, y ≠ 1x 6Li1-xMgyEu1-yX3The crystal is doped with rare earth elements and alkali metals together, and the neutron signals and gamma rays are detected doubly.
8. The method of making a substantial block of high quality scintillation crystals of claim 1 comprising the steps of:
1) CsX and MgX were mixed in a stoichiometric ratio in a glove box2Mixing uniformly, with or without adding6LiX and/or EuX2Filling the mixed material into a quartz tube, and then vacuumizing and sealing;
2) placing the sealed quartz tube into a resistance furnace, circulating for three times in a heating-cooling-heating mode, keeping the temperature at 400-680 ℃ for 8-15 hours, and cooling to room temperature to obtain a polycrystalline material;
3) putting a quartz tube containing polycrystalline materials into a crucible descending furnace, heating to the temperature of 300-680 ℃, preserving heat for 8-15 hours, adjusting the position of the quartz tube, enabling the temperature of a spontaneous nucleation area or an inoculation area at the bottom of the quartz tube to be 1-5 ℃ higher than a melting point, enabling the temperature gradient in a single crystal growth furnace to be 5-15 ℃/cm, then slowly descending the quartz tube at the speed of 0.03-0.05mm/h, keeping the growth temperature unchanged, after the growth is finished, firstly cooling the growth furnace to the temperature of 180-220 ℃, and then naturally cooling to the room temperature to obtain the large-block high-quality scintillation crystal.
9. The method according to claim 8, wherein the degree of vacuum after the evacuation in step 1) is 10– 6mbar; in the step 2), the modes of heating-cooling-heating are as follows: firstly heating to 500-650 ℃ at the speed of 50-100 ℃/h, then cooling to 100-150 ℃ at the speed of 30-50 ℃/h, heating to 500-650 ℃ at the speed of 50-100 ℃/h, and circulating for three times; in the step 2), the cooling rate of cooling to room temperature is 1-15 ℃/h.
10. The application of large-block high-quality scintillation crystal is used in the fields of national defense, medical treatment, security inspection and nuclear non-diffusion to implement neutron detection, double detection or neutron/gamma double detection.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114775053A (en) * | 2022-03-28 | 2022-07-22 | 山东大学 | Cerium-lithium double-doped cesium chloride zirconium scintillation crystal, preparation method thereof and application thereof in neutron/gamma ray double detection |
| CN114775053B (en) * | 2022-03-28 | 2023-12-26 | 山东大学 | Cerium-lithium double-doped cesium-zirconium chloride scintillation crystal, preparation thereof and application thereof in neutron/gamma ray double-detection |
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| CN113512757B (en) | 2022-10-21 |
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