CN113512755B - Immersion phosphide synthesizing and growing device under magnetic field - Google Patents
Immersion phosphide synthesizing and growing device under magnetic field Download PDFInfo
- Publication number
- CN113512755B CN113512755B CN202110760674.1A CN202110760674A CN113512755B CN 113512755 B CN113512755 B CN 113512755B CN 202110760674 A CN202110760674 A CN 202110760674A CN 113512755 B CN113512755 B CN 113512755B
- Authority
- CN
- China
- Prior art keywords
- crucible
- injection
- red phosphorus
- shielding layer
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/006—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/10—Production of homogeneous polycrystalline material with defined structure from liquids by pulling from a melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110760674.1A CN113512755B (en) | 2021-07-06 | 2021-07-06 | Immersion phosphide synthesizing and growing device under magnetic field |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110760674.1A CN113512755B (en) | 2021-07-06 | 2021-07-06 | Immersion phosphide synthesizing and growing device under magnetic field |
Publications (2)
Publication Number | Publication Date |
---|---|
CN113512755A CN113512755A (en) | 2021-10-19 |
CN113512755B true CN113512755B (en) | 2022-10-04 |
Family
ID=78066586
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110760674.1A Active CN113512755B (en) | 2021-07-06 | 2021-07-06 | Immersion phosphide synthesizing and growing device under magnetic field |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN113512755B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113502546B (en) * | 2021-07-06 | 2022-08-19 | 中国电子科技集团公司第十三研究所 | Method for synthesizing and continuously growing phosphide in magnetic field |
CN115198368A (en) * | 2022-07-15 | 2022-10-18 | 中国电子科技集团公司第十三研究所 | Injection synthesis method of semiconductor compound |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5252175A (en) * | 1990-06-29 | 1993-10-12 | The United States Of America As Represented By The Secretary Of The Air Force | Capillary pressure relief for magnetic Kyropoulos growth of semiconductor crystals |
JPH0940498A (en) * | 1995-07-29 | 1997-02-10 | Sumitomo Metal Mining Co Ltd | Apparatus for producing gallium phosphate polycrystal |
US8021481B2 (en) * | 2008-08-07 | 2011-09-20 | Soraa, Inc. | Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride |
CN105369344A (en) * | 2015-12-15 | 2016-03-02 | 洛阳西格马炉业股份有限公司 | Method and device used for preparing platy monocrystals via temperature field gradient vertical shifting method |
CN108358180B (en) * | 2017-12-08 | 2019-08-02 | 中国电子科技集团公司第十三研究所 | Phosphide injection synthetic method in situ is carried out using carrying gas |
WO2019109367A1 (en) * | 2017-12-08 | 2019-06-13 | 中国电子科技集团公司第十三研究所 | Device and method for rotational and continuous crystal growth by vgf process after horizontal injection and synthesis |
CN109402722B (en) * | 2018-12-14 | 2020-09-01 | 中国电子科技集团公司第十三研究所 | Device and method for synthesizing continuous VGF crystal growth by trans-injection |
CN110760931B (en) * | 2019-11-22 | 2024-03-19 | 中国电子科技集团公司第十三研究所 | System for preparing indium phosphide crystal by utilizing indium-phosphorus mixture |
CN212895088U (en) * | 2020-06-02 | 2021-04-06 | 中国电子科技集团公司第十三研究所 | System for synthesizing indium phosphide by liquid phosphorus injection method |
CN112708935B (en) * | 2020-12-23 | 2021-12-07 | 中国电子科技集团公司第十三研究所 | Control method of semiconductor phosphide injection synthesis system |
-
2021
- 2021-07-06 CN CN202110760674.1A patent/CN113512755B/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN113512755A (en) | 2021-10-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN113512755B (en) | Immersion phosphide synthesizing and growing device under magnetic field | |
WO2021098347A1 (en) | System for preparing indium phosphide crystal from indium phosphorus mixture | |
CN102330143B (en) | Manufacturing process of monocrystalline silicon ingot and thermal field structure of ingot furnace | |
WO2021098348A1 (en) | Method for preparing indium phosphide crystal using indium-phosphorus mixture | |
KR101139845B1 (en) | A high-throughput apparatus for manufacturing silicon ingots for the polycrystalline silicon solar cell | |
CN113502546B (en) | Method for synthesizing and continuously growing phosphide in magnetic field | |
CN108277534A (en) | A kind of graphite resistance heating SiC crystal growth furnace | |
JP2020536827A (en) | Method of phosphide in situ injection synthesis using carrier gas | |
CN111809235B (en) | Method for preparing cadmium telluride or cadmium zinc telluride polycrystal material | |
JP2021510139A (en) | Quartz tube and equipment for crystal growth by VB / VGF method | |
CN208151525U (en) | A kind of graphite resistance heating SiC crystal growth furnace | |
CN113308738B (en) | Method for preparing compound semiconductor crystal by combining continuous LEC and VGF after injection synthesis | |
CN215251334U (en) | Phosphorus immersion phosphide synthesis and growth device | |
CN113308740B (en) | Preparation method of semi-insulating indium phosphide | |
WO2024012520A1 (en) | Device and method for centrifugally synthesizing and growing compound crystal | |
CN211112317U (en) | System for preparing indium phosphide crystal by indium phosphide mixture | |
CN116791200A (en) | Device and method for growing silicon carbide crystal by liquid phase method | |
CN113308739B (en) | System for preparing compound semiconductor crystal by combining continuous LEC and VGF after injection synthesis | |
CN113308744B (en) | Preparation device of semi-insulating indium phosphide | |
CN115198370B (en) | Device and method for preparing indium phosphide crystal through vertical temperature gradient solidification | |
CN110820043A (en) | Crystal growth apparatus and growth method | |
CN111809243B (en) | Method for preparing cadmium telluride or cadmium zinc telluride polycrystal material | |
CN113403689A (en) | Preparation method and device of low-defect tellurium-zinc-cadmium crystal | |
JP2024500256A (en) | Semiconductor phosphide injection synthesis system and control method | |
CN203530489U (en) | Polycrystalline silicon ingot furnace thermal field structure |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB03 | Change of inventor or designer information |
Inventor after: Dang Jiping Inventor after: Wang Yang Inventor after: Sun Niefeng Inventor after: Wang Shujie Inventor after: Xu Senfeng Inventor after: Shi Yanlei Inventor after: Shao Huimin Inventor after: Fu Lijie Inventor after: Bu Aimin Inventor after: Li Xiaolan Inventor before: Sun Niefeng Inventor before: Wang Shujie Inventor before: Xu Senfeng Inventor before: Shi Yanlei Inventor before: Shao Huimin Inventor before: Fu Lijie Inventor before: Bu Aimin Inventor before: Li Xiaolan Inventor before: Wang Yang |
|
CB03 | Change of inventor or designer information | ||
GR01 | Patent grant | ||
GR01 | Patent grant |