CN113508525A - Multi-resonant network for amplifiers - Google Patents

Multi-resonant network for amplifiers Download PDF

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Publication number
CN113508525A
CN113508525A CN201980087656.2A CN201980087656A CN113508525A CN 113508525 A CN113508525 A CN 113508525A CN 201980087656 A CN201980087656 A CN 201980087656A CN 113508525 A CN113508525 A CN 113508525A
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network
circuit
resonant
terminal
transistor
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保罗·罗西
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Huawei Technologies Co Ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/083—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers
    • H03F1/086—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements in transistor amplifiers with FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/42—Modifications of amplifiers to extend the bandwidth
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0088—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using discontinuously variable devices, e.g. switch-operated
    • H03G1/0094—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using discontinuously variable devices, e.g. switch-operated using switched capacitors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G5/00—Tone control or bandwidth control in amplifiers
    • H03G5/16—Automatic control
    • H03G5/24—Automatic control in frequency-selective amplifiers
    • H03G5/28—Automatic control in frequency-selective amplifiers having semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/168—Two amplifying stages are coupled by means of a filter circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier

Abstract

The present invention relates generally to the field of broadband amplifiers for high data rate wired/optical communications. The invention provides a multi-resonance network in the technical field. The multi-resonant network includes: an input terminal and an output terminal; and at least one resonant circuit comprising an inductance connected between the input terminal and the output terminal. Further, the multi-resonant network comprises a tuning circuit connected in parallel to the inductance, wherein the tuning circuit comprises at least one reactive circuit and/or at least one resistive circuit.

Description

Multi-resonant network for amplifiers
Technical Field
The present invention relates generally to the field of broadband amplifiers for high data rate wired/optical communications. The invention provides a multi-resonance network in the technical field. Furthermore, the invention also proposes an amplifier, in particular a wideband amplifier, a trans-impedance amplifier (TIA) and/or a driver amplifier, comprising the multi-resonant network. The multi-resonant network can be a Radio Frequency (RF) building block capable of providing a programmable transfer function.
Background
RF building blocks capable of providing programmable transfer functions are widely required to optimize data link performance. In fact, the frequency dependent transfer function of analog electronics (e.g., TIAs and drivers) is desired to have programmable bandwidth and/or programmable peaking in order to compensate for non-idealities from the link (e.g., photodiodes, modulators, etc.). The availability of analog devices with such tuning features would be a competitive advantage as they can be used to fine tune the electro-optical transfer function in a communication module where the electrical components are paired with their optical counterparts (e.g., MZM modulators, photodiodes, etc.).
Hereinafter, two conventional schemes are described and examined from their merits and demerits.
1. The most common design technique for achieving frequency dependent transfer function peak control is resistance/capacitance (RC) degradation of the differential pair. Usually with added resistance degradation RdegIn order to achieve good linearity performance in terms of Total Harmonic Distortion (THD). The RC pole of the degeneration network causes the transconductance (Gm) transfer function to go to zero if the resistive degeneration is paired with the capacitive degeneration. The zero is typically located near the cut-off frequency associated with the output resistor stage, which results in an expansion of the bandwidth and significant peaking in the overall transfer function. The capacitor can be easily programmable, which increases the flexibility of the frequency location of the zero, the effect of the zero switching being reported in the transfer function.
A significant advantage of this design technique is that it can be implemented directly in modern-scale complementary Metal-Oxide-Semiconductor (CMOS) and Bi-CMOS technologies due to the excellent integrated active switches (e.g., MOS transistors). However, detailed analysis also reveals several disadvantages associated with this design: a first drawback is that the zero in the transfer function usually occurs in the low/mid frequency range, resulting in a limited effectiveness of the technique in very high frequency applications. A second drawback results from the small quantitative impact on the controllability of the peak amplitude of the overall transfer function. As previously mentioned, a zero in the transconductance transfer function will normally zero the influence of a pole associated with the output stage, and thus the peak in the overall transfer function is caused by the frequency offset of the dipole zero. The third drawback is the previous result: this technique links programmability at zero frequency to peak amplitude, resulting in limited flexibility in transfer function programmability (i.e., changing the peak, we get a change in the zero pole pair, and vice versa).
2. Another rather common technique is so-called active feedback: starting with a cascade of gain stages (in a minimum configuration, there are 2 stages G in the cascadem1And Gm2) The bandwidth limitation is partially overcome, and an active feedback element (G) is combinedmfb). Analytical calculations directly indicate that3dBAnd the peak value of the resulting closed loop transfer function depends on the transconductance gain GmfbThis indicates that the feedback element qualifies as a tuning element.
Unfortunately, both the peak amplitude and the cut-off frequency depend on the tuning parameter GmfbThe programmable space is therefore rigid, there is no flexibility between peaks, and there is frequency tuning. In addition, this design also has two major disadvantages: first, the inclusion of an active element G is addedmfbDesign flexibility in that increases the power consumption of the RF building block. Secondly, the scheme is based on a closed loop topology, so it is inherently unsuitable for applications covering very large frequency ranges.
In summary, conventional techniques for implementing bandwidth and/or peak control of frequency dependent transfer functions are severely limited in both maximum operating bandwidth and limited flexibility of tuning elements.
Disclosure of Invention
In view of the above challenges, it is an object of embodiments of the present invention to improve the prior art with respect to the above disadvantages.
This object is achieved by the embodiments of the invention provided in the appended independent claims. Advantageous embodiments of the invention are further defined in the dependent claims.
In a first aspect, the present invention provides a multi-resonant network comprising: an input terminal and an output terminal; at least one resonant circuit comprising an inductance connected between the input terminal and the output terminal; and a tuning circuit connected in parallel to the inductance, wherein the tuning element comprises at least one reactive circuit and/or at least one resistive circuit.
The tuning element provides the possibility to influence the resonance frequency in a multi-resonant network and thus the frequency dependent transfer function. In particular, the reactive circuit can affect the cut-off frequency of the transfer function, and thus the bandwidth. The resistive circuit can affect the quality factor of the transfer function resonance and thus affect the peaking.
In one implementation form of the first aspect, the tuning circuit is configured to change an absolute value and/or a quality factor of one or more resonances of the multi-resonant network.
Thus, the tuning circuit can be used to provide programmability of peaking. The quality factor is a parameter describing the resonance behavior of the multi-resonant network resonance. The larger the quality factor, the more the multi-resonant network will resonate at a greater amplitude at the resonant frequency if driven sinusoidally at that frequency, and the multi-resonant network resonates over a smaller range of frequencies around the resonant frequency, i.e., the multi-resonant network has a smaller bandwidth at resonance.
In one implementation form of the first aspect, the tuning circuit comprises at least one switchable or tunable reactive circuit and/or at least one switchable or variable resistor.
The reactive circuit or variable resistor is turned on and off to change the transfer function with respect to the cut-off frequency or quality factor to provide the desired programmability.
In one implementation form of the first aspect, the tuning circuit comprises a plurality of capacitors and a plurality of switches for selectively connecting or disconnecting each of the capacitors in parallel with the inductance.
Connecting and disconnecting the capacitors, respectively, changes the cut-off frequency of the frequency dependent transfer function, thereby allowing manipulation of the bandwidth.
In one implementation form of the first aspect, the tuning circuit comprises a plurality of resistors and a plurality of switches for selectively connecting or disconnecting each of the resistors in parallel with the inductance.
Connecting and disconnecting the resistors changes the quality factor of at least one resonance of the transfer function, respectively, allowing peak control.
In one implementation form of the first aspect, the plurality of switches comprises a plurality of integrated MOS devices.
In one implementation form of the first aspect, the multi-resonant network is configured to receive a current, in particular an RF current, as an input and to provide an RF voltage as an output.
In one implementation form of the first aspect, the input terminal is an input terminal of a first transistor, and the output terminal is a control terminal of a second transistor.
In an implementation form of the first aspect, the multi-resonant network is configured to receive as an input a voltage, in particular an RF voltage, at the control terminal of the first transistor and to provide as an output a current, in particular an RF current, flowing between the input terminal and the output terminal of the second transistor.
In one implementation form of the first aspect, the resonant circuit comprises the inductance, a first capacitor and a second capacitor, one terminal of the first capacitor being connected between the inductance and the input terminal of the first transistor, the other terminal thereof being connected to ground, and/or one terminal of the second capacitor being connected between the inductance and the control terminal of the second transistor, the other terminal thereof being connected to ground.
In one implementation form of the first aspect, the input terminal of the first transistor is directly connected to the inductor, and the output terminal thereof is connected to ground, and the control terminal of the second transistor is directly connected to the inductor, and the output terminal thereof is connected to ground.
In one implementation form of the first aspect, the input terminal of the first transistor is connected to a further resonant circuit, which in particular comprises a resistor and an inductance connected in series.
In one implementation form of the first aspect, the first transistor is connected to a voltage source, in particular a dc voltage source, via a further resonant circuit.
In a second aspect, the present invention provides an amplifier, in particular a wideband amplifier, a transimpedance amplifier and/or a driver amplifier, comprising a multi-resonant network according to the first aspect or any implementation form thereof.
It should be noted that all devices, elements, units and means described in the present application may be implemented in software or hardware elements or any type of combination thereof. All steps performed by the various entities described in the present application and the functions described to be performed by the various entities are intended to indicate that the respective entities are adapted or arranged to perform the respective steps and functions. Although in the following description of specific embodiments specific functions or steps performed by an external entity are not reflected in the description of specific elements of the entity performing the specific steps or functions, it should be clear to a skilled person that these methods and functions may be implemented in respective hardware or software elements or any combination thereof.
Drawings
The foregoing aspects and many of the attendant aspects of this invention will become more readily appreciated as the same become better understood by reference to the following detailed description, when taken in conjunction with the accompanying drawings, wherein:
fig. 1 shows a multi-resonant network of an embodiment of the invention.
Fig. 2 shows a multi-resonant network of an embodiment of the invention.
Fig. 3 illustrates a multi-resonant network of an embodiment of the present invention.
Fig. 4 shows a multi-resonant network of an embodiment of the invention.
Fig. 5 shows a frequency dependent transfer function of the multi-resonant network of fig. 4 and illustrates bandwidth tuning.
Fig. 6 illustrates a multi-resonant network of an embodiment of the present invention.
Fig. 7 shows the frequency dependent transfer function of the multi-resonant network of fig. 6 and illustrates peak control.
Figure 8 shows an example of a triple resonant network.
Fig. 9 shows the frequency dependent transfer function of the triple-resonant network of fig. 9.
Detailed Description
Embodiments of the present invention aim to provide a multi-resonant network, such as an RF building block, with a programmable transfer function, i.e. the possibility to change the frequency response of the transfer function. In particular, the bandwidth and/or peak should be programmable. Thus, the RF building block should not be limited by the maximum operating bandwidth or limited tuning flexibility.
Embodiments of the present invention are based on a multi-resonant network which is an extension of the Triple Resonant Network (TRN) proposed in the document "40-Gb/s amplifier and ESD protection circuit in0.18 μm CMOS technology" by Razavi (40-Gb/s amplifier and ESD protection circuit in0.18 μm CMOS technology "(IEEE Journal of Solid-State Circuits, 2004, vol.39, No. 12) in IEEE Journal of Solid-State Circuits". This technology is particularly interesting with its complement, called inverse triple resonance network (I-TRN), proposed in 'Chih-Fan Liao, Shen-Iuan Liu document "40 Gb/s Transimpedance-AGC Amplifier and CDR Circuit for 90nm CMOS wideband Data receiver" (40Gb/s trans-impedance-AGC Amplifier and CDR Circuit for Broadband Data Receivers in 90nm CMOS) "(IEEE Journal of Solid-State Circuits, 2008, volume 43, phase 3)' to push the Circuit design of the driver and TIA towards the absolute limits of the technology. To provide the correct background, the following review of TRNs and derivation of considerations lays the foundation for the present invention.
Fig. 8 shows an example of a TRN, and fig. 9 schematically shows a frequency dependent transfer function thereof. Considering fig. 8 (where MOS devices are used only as reference, they may be replaced by bipolar transistors), without loss of generality, we may assume C1＝C2＝C0/2 and L2＝2*L1。
Three resonant frequencies can be determined by simple calculations:
Figure BDA0003144761330000041
Figure BDA0003144761330000042
Figure BDA0003144761330000043
the resonant frequency is represented by the transfer function graph of the TRN shown in fig. 9.
The resulting bandwidth exceeds approximately 3 times the frequency limit given by the resistive load RC, taking into account the overall transfer function. The TRN is the starting element of the multi-resonant network according to the embodiments of the invention described below.
Fig. 1 illustrates a multi-resonant network 100 of an embodiment of the present invention. In particular, the multi-resonant network 100 has an adapted or adaptable frequency dependent transfer function. Thus, the multi-resonant network 100 may well serve as an RF building block providing programmability in a wideband amplifier.
The multi-resonant network 100 includes an input terminal 101 and an output terminal 102. The input terminal 101 and the output terminal 102 may be implemented by transistors, but may also be implemented by transconductors or, in general, current generators. Furthermore, the multi-resonant network 100 comprises at least one resonant circuit comprising an inductance 103 (and, for example, two capacitors C1 and C2 as exemplarily shown in fig. 1), wherein the resonant circuit is connected between the input terminal 101 and the output terminal 102.
Furthermore, the multi-resonant network 100 comprises a tuning circuit 104, the tuning circuit 104 being connected in parallel to the inductance 103. The tuning circuit 104 comprises at least one reactive circuit or element and/or at least one resistive circuit or element. In this way, the tuning circuit 104 is used to affect the frequency response of the transfer function of the multi-resonant network 100.
It is noted thatThe multi-resonant network 100 has different resonant frequencies when in operation. The resonant frequency primarily affected by the tuning circuit 104 may be ω as described above with respect to fig. 82。
Fig. 2 shows a multi-resonant network 100 of an embodiment of the present invention, which is built on top of the multi-resonant network 100 shown in fig. 1. Like elements in fig. 1 and 2 have the same reference numerals and the same functions.
In addition to the elements shown in the multiresonant network 100 of fig. 1, the multiresonant network 100 of fig. 2 further comprises a second resonant circuit connected to the input terminal 101. For example, the further resonant circuit may comprise at least one resistor 202 and at least one inductance 203 connected in series. The other resonant circuit may be connected to ground. The further resonant circuit influences a frequency-dependent transfer function, in particular a resonant frequency of the network 100.
Fig. 3 illustrates a multi-resonant network 100 of an embodiment of the present invention, which is built on top of the multi-resonant network 100 shown in fig. 2. Like elements in fig. 2 and 3 have the same reference numerals and the same functions.
In addition to the elements shown in fig. 2 for the multi-resonant network 100, in the multi-resonant network 100 of fig. 3 the input terminal 101 is the input terminal of the first transistor 204 and the output terminal 102 is the control terminal of the second transistor 205. The transistors 204, 205 may be Field Effect Transistors (FETs) or Bipolar Junction Transistors (BJTs).
In the multi-resonant network 100 shown in fig. 3, another resonant circuit may be connected between the first transistor 204 and a voltage supply. That is, the first transistor 204 may be connected to a voltage supply, in particular a DC voltage supply, via another resonant circuit, such as the resistor 202 and the inductance 203. It is noted that this implementation is also possible for the multi-resonant network 100 shown in fig. 2.
One difference of the multiple resonant networks 100 shown in fig. 1-3 compared to the TRN shown in fig. 8 is the addition of a tuning circuit 104 (also referred to as Z)tuningAs marked in the figure) which is able to modify the multi-harmonicsThe frequency dependent transfer function of the vibration network 100 may in particular add tuning features. According to an embodiment of the invention, the following implementation methods are possible with respect to the tuning element 104:
if Z istuningBeing a pure reactive circuit or element, the resonance frequency of the multi-resonant network 100 may be modified, in particular the frequency programmability of the circuit cut-off frequency may be increased.
If Z istuningIs a resistive circuit or element, it may act on the quality factor of the resonance of the multi-resonant network 100. The macroscopic effect is the change in the amplitude of the peak of the frequency dependent transfer function.
It is noted that the circuit position of the tuning circuit 104 (i.e. in a position where direct current does not flow) is advantageous and allows to implement switchable elements based on MOS devices.
Fig. 4 shows an example of a multi-resonant network 100 of an embodiment of the present invention, which builds on the multi-resonant network 100 shown in fig. 3. Like elements in fig. 3 and 4 have the same reference numerals and the same functions. In light of the previous considerations, control of the bandwidth of the transfer function may be achieved with the multi-resonant network 100 shown in FIG. 4.
Specifically, starting from the more general scheme of multiple resonant networks 100 shown in fig. 1-3, the tuning circuit 104 in fig. 4 is implemented by a set of capacitors 400. Each capacitor 400 may be connected to an inductance 103 (also referred to as L) in parallel with an integrated switch 401 (shown as an ideal switch in the figure)2As labeled in the figure) the integrated switch 401 can be easily implemented with, for example, MOS devices. By connecting the capacitor 400 in parallel to the inductance 103, the resonant frequency of the network changes and the presence of the switch 401 makes the function fully adjustable.
The results of the simulation are shown in figure 5. In particular, fig. 5 shows a simplified chart reporting the bandwidth control capability. Acting on the switch 401, the frequency shape of the network 100 is preserved, but the absolute value of the resonance frequency is affected, effectively tuning the bandwidth. Furthermore, the cut-off frequency changes, while the peak is only slightly affected.
Fig. 6 illustrates an exemplary multi-resonant network 100 of embodiments of the present invention, which is built on the network 100 shown in fig. 3. Like elements in fig. 3 and 6 have like reference numerals and functions. Specifically, in fig. 6, the tuning circuit 104 is now implemented with a resistor bank 600. Each resistor 600 may be connected in parallel to the inductance 103 via a switch 601. the switch 601 may be easily implemented, for example, with a MOS device. By connecting a resistor 600 in parallel to the inductance 103, the quality factor of the resonance is changed, resulting in a peak value acting on the frequency dependent transfer function.
The results of the simulation are shown in figure 7. In particular, fig. 7 shows a simplified graph reporting the peak control capability.
In summary, embodiments of the present invention combine a bandwidth extension scheme, referred to as TRN, with a novel design technique that allows flexible control of the bandwidth and peak amplitude of the resulting transfer function. Starting from the basic TRN, an additional tuning circuit 104 is added, so that the following goals can be achieved:
the frequency dependent transfer function can be tuned in terms of cut-off frequency and peak value.
Cut-off frequency tuning is achieved by including a capacitor 400 in parallel with the inductance 103.
Implementation of peak control, comprising a resistor 600 in parallel to said inductance 103.
The location of the tuning circuit 104, easy to implement using integrated switching devices, such as MOS transistors.
The cut-off frequency and the peak control are orthogonal, which allows great flexibility in the programmability of the frequency dependent transfer function.
The proposed embodiments of the invention increase the flexibility of the RF building block and can be used efficiently in, for example, a TIA or driver for high speed data links. Embodiments of the present invention are based on advanced design techniques and can be used to implement RF building blocks with very large bandwidths, as compared to the best performing conventional topology. Extending the comparison with the best performing conventional topology to power consumption, it can be concluded that embodiments of the present invention are not lossy in power consumption.
The proposed embodiments are applicable to fully integrated building blocks of the TIA and drivers that require programmability in terms of bandwidth and peak control. The proposed embodiments are suitable for integration in many different IC technologies including, but not limited to, Bi-CMOS, CMOS and III-V compound technologies (e.g., InP or GaAs).
The invention has been described in connection with various embodiments and implementations as examples. However, other variations will become apparent to those skilled in the art and may be made in practicing the claimed invention, from a study of the drawings, the disclosure, and the appended claims. In the claims as well as in the description, the word "comprising" does not exclude other elements or steps, and the terms "a" or "an" do not exclude a plurality. A single element or other unit may fulfill the functions of several entities or items recited in the claims. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measures cannot be used to advantage.

Claims (14)

1. A multi-resonant network (100), comprising:
an input terminal (101) and an output terminal (102),
at least one resonant circuit (200, 201, 103) comprising an inductance (103) connected between the input terminal (101) and the output terminal (102), and
a tuning circuit (104) connected in parallel to the inductance (103), wherein the tuning circuit (104) comprises at least one reactive circuit and/or at least one resistive circuit.
2. The multiresonant network (100) of claim 1, wherein:
the tuning circuit (104) is configured to change an absolute value and/or a quality factor of one or more resonances of the multi-resonant network (100).
3. The multiresonant network (100) of claim 1 or 2, wherein:
the tuning circuit (104) comprises at least one switchable or tunable reactive circuit and/or at least one switchable or variable resistor.
4. The multi-resonant network (100) according to any one of claims 1 to 3, characterized in that:
the tuning circuit (104) comprises a plurality of capacitors (400) and a plurality of switches (401) for selectively connecting or disconnecting each of the capacitors (400) in parallel with the inductance (103).
5. The multi-resonant network (100) of any one of claims 1 to 4, characterized in that:
the tuning circuit (104) comprises a plurality of resistors (600) and a plurality of switches (601) for selectively connecting or disconnecting each of the resistors (600) in parallel with the inductance (103).
6. The multi-resonant network (100) according to claim 4 or 5, characterized in that:
the plurality of switches (401, 601) includes a plurality of integrated Metal-Oxide-Semiconductor (MOS) devices.
7. The multiresonant network (100) of any of claims 1 to 6, configured for:
receiving as input a current, in particular an RF current, and
an RF voltage is provided as an output.
8. The multi-resonant network (100) of any one of claims 1 to 6, characterized in that:
the input terminal (101) is an input terminal of a first transistor (204), an
The output terminal (102) is a control terminal of a second transistor (205).
9. The multiresonant network (100) of claim 8, configured to:
receiving as an input a voltage, in particular an RF voltage, at a control terminal of the first transistor (204), an
A current, in particular an RF current, flowing between an input terminal and an output terminal of the second transistor (205) is provided as an output.
10. The multiresonant network (100) of claim 8 or 9, wherein:
the resonance circuit comprising the inductance (103), a first capacitor (200) and a second capacitor (201),
one terminal of the first capacitor (200) is connected between the inductance (103) and the input terminal of the first transistor (204), the other terminal thereof is connected to ground, and/or
One terminal of the second capacitor (201) is connected between the inductor (103) and the control terminal of the second transistor (205), and the other terminal thereof is grounded.
11. The multiresonant network (100) of any of claims 8 to 10, wherein:
the input terminal of the first transistor (204) is directly connected to the inductance (103), the output terminal thereof is connected to ground, an
The control terminal of the second transistor (205) is directly connected to the inductance (103), and its output terminal is grounded.
12. The multiresonant network (100) of any of claims 8 to 11, wherein:
the input terminal of the first transistor (204) is connected to another resonant circuit (202, 203), which in particular comprises a resistor (202) and an inductor (203) connected in series.
13. The multiresonant network (100) of claim 12, wherein:
the first transistor (204) is connected to a voltage supply, in particular a direct voltage supply, via a further resonant circuit (202, 203).
14. An amplifier, in particular a broadband amplifier, a transimpedance amplifier and/or a driver amplifier, characterized in that it comprises a multi-resonant network (100) according to any one of claims 1 to 13.
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