CN113497024A - Integrated circuit, transistor device thereof and preparation method - Google Patents

Integrated circuit, transistor device thereof and preparation method Download PDF

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Publication number
CN113497024A
CN113497024A CN202010255413.XA CN202010255413A CN113497024A CN 113497024 A CN113497024 A CN 113497024A CN 202010255413 A CN202010255413 A CN 202010255413A CN 113497024 A CN113497024 A CN 113497024A
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Prior art keywords
doped region
region
well region
transistor device
mos tube
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方绍明
戴文芳
李照华
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Shenzhen Sunmoon Microelectronics Co Ltd
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Shenzhen Sunmoon Microelectronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823418—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0292—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using a specific configuration of the conducting means connecting the protective devices, e.g. ESD buses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0296—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices involving a specific disposition of the protective devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate

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  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

The transistor device comprises a first MOS tube and a second MOS tube, wherein a source electrode of the first MOS tube and a drain electrode of the second MOS tube are jointly formed in a first doping area, the first doping area is coupled with a pin of the integrated circuit, and a grid electrode, a source electrode and a substrate of the second MOS tube are grounded, so that the second MOS tube is integrated in the first MOS tube and is connected with the first MOS tube in series, the second MOS tube can discharge current of the pin and the first MOS tube to the ground, ESD suppression is realized on the first MOS tube and the integrated circuit where the first MOS tube is located, namely the transistor device can realize ESD suppression only by itself without additionally accessing a surge protection device, and the problem that the space of the integrated circuit is large because ESD surge protection cannot be carried out in the traditional technical scheme is solved.

Description

Integrated circuit, transistor device thereof and preparation method
Technical Field
The present application relates to the field of semiconductor technology, and more particularly, to an integrated circuit, a transistor device thereof, and a method for manufacturing the same.
Background
At present, the design of excellent semiconductor devices brings great convenience to the design of integrated circuits and layouts. In an integrated circuit layout, in an LED lighting driver chip, a source of a high-voltage LDMOS (Laterally Diffused Metal Oxide Semiconductor) is connected to an internal circuit element of the driver chip on one hand and an external input/output pin of the driver chip on the other hand, and when a pin of the driver chip contacts an ESD (ElectroStatic Discharge) surge, the LDMOS and a chip on which the LDMOS is located are easily damaged, so that the source of the LDMOS needs to be protected.
Disclosure of Invention
The application aims to provide an integrated circuit, a transistor device of the integrated circuit and a preparation method of the transistor device, and aims to solve the problem that ESD surge protection cannot be performed or the space of the integrated circuit is large in the traditional technical scheme.
A first aspect of an embodiment of the present application provides a transistor device for an integrated circuit, including a first MOS transistor and a second MOS transistor, where a source of the first MOS transistor and a drain of the second MOS transistor are jointly formed in a first doped region, the first doped region is coupled to a pin of the integrated circuit, a gate, a source, and a substrate of the second MOS transistor are grounded, and the second MOS transistor is configured to bleed a surge current of the pin and the first MOS transistor.
A second aspect of an embodiment of the present application provides an integrated circuit, including: the transistor device of the first aspect of an embodiment of the present application.
A third aspect of an embodiment of the present application provides a method for manufacturing a transistor device, including:
forming a first well region of a first conductivity type and a second well region of a second conductivity type on a substrate of the first conductivity type;
growing a first silicon dioxide layer on the upper surface of the first well region and the upper surface of the second well region, and forming a field oxide layer in a photoetching manner;
growing a second silicon dioxide layer on the upper surface of the first well region to form a gate oxide layer and form a first semi-finished product structure of the transistor device;
depositing a polysilicon layer on the upper surface of the first semi-finished product structure, and defining a first polysilicon gate and a second polysilicon gate by using photoetching and etching methods;
forming a first doped region and a second doped region which are both of a second conductivity type on the upper surface of the first well region at intervals;
forming a third doped region of the first conductivity type on the upper surface of the first well region to form a second semi-finished structure of the transistor device, wherein the third doped region and the second doped region are arranged at intervals along the length direction of the first doped region;
depositing a dielectric layer on the upper surface of the second semi-finished product structure, and opening a plurality of lead holes on the dielectric layer in a photoetching and etching mode;
depositing a metal layer on the dielectric layer, and defining a plurality of metal electrodes for external connection on the metal layer in a photoetching and etching mode;
the first doped region, the second polysilicon gate, the first well region and the second well region form a first MOS transistor, the first well region, the first doped region, the second doped region, the third doped region and the first polysilicon gate form a second MOS transistor, and the first MOS transistor and the second MOS transistor form the transistor device.
The transistor device of the integrated circuit comprises a first MOS tube and a second MOS tube, wherein a source electrode of the first MOS tube and a drain electrode of the second MOS tube are formed in a first doping area together, the first doping area is coupled with a pin of the integrated circuit, and a grid electrode, a source electrode and a substrate of the second MOS tube are grounded, so that the second MOS tube is integrated in the first MOS tube and connected with the first MOS tube in series, and surge current of the pin and the first MOS tube can be discharged to the ground by the second MOS tube, thereby realizing ESD suppression on the first MOS tube and the integrated circuit where the first MOS tube is located.
Drawings
Fig. 1 is a schematic circuit diagram of a transistor device according to an embodiment of the present application;
fig. 2 is a schematic plan view of the transistor device shown in fig. 1;
FIG. 3 is a schematic vertical structure along line A of the transistor device shown in FIG. 2;
FIG. 4 is a schematic vertical structure along the B-line of the transistor device shown in FIG. 2;
fig. 5 is a specific flowchart of a method for manufacturing a transistor device according to an embodiment of the present disclosure.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present application clearer, the present application is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element.
It will be understood that the terms "length," "width," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like, refer to an orientation or positional relationship illustrated in the drawings for convenience in describing the present application and to simplify description, and do not indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and thus should not be construed as limiting the present application.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
In the prior art, a GGMOS is additionally connected in parallel to a source of an LDMOS to discharge ESD surge current of the LDMOS, but the GGMOS needs to occupy an additional chip space, so that the area of a chip is limited, and in this way, the GGMOS discharges LDMOS current unevenly, and therefore, the ESD protection effect is not ideal.
Fig. 1 shows a schematic circuit diagram of a transistor device provided in an embodiment of the present application, and for convenience of illustration, only the portions related to the embodiment are shown, and detailed as follows:
referring to fig. 1 and fig. 2, the transistor device for an integrated circuit in the present embodiment includes a first MOS transistor Q1 and a second MOS transistor Q2, a source S1 of the first MOS transistor Q1 and a drain D2 of the second MOS transistor Q2 are commonly formed in a first doped region 31, the first doped region 31 is coupled to a pin of the integrated circuit, and a gate G2 and a source S2 of the second MOS transistor Q2 and a substrate 10 are grounded and configured to bleed off a surge current of the pin and the first MOS transistor Q1.
It should be understood that in the present embodiment, the source S1 of the first MOS transistor Q1 and the drain D2 of the second MOS transistor Q2 are commonly formed in the first doped region 31, so that the first MOS transistor Q1 and the second MOS transistor Q2 are connected in series and integrated into a whole transistor device; the gate G2, the source S2 and the substrate 10 of the second MOS transistor Q2 in this embodiment are grounded through a ground pin of the integrated circuit. The first MOS transistor Q1 and the second MOS transistor Q2 may be an LDMOS transistor and a GGMOS transistor, respectively.
Alternatively, the integrated circuit in this embodiment may be a single transistor device integrated circuit, and when the integrated circuit is a single transistor device integrated circuit, the integrated circuit includes a high potential terminal, a control terminal, a low potential terminal, and a drain terminal, wherein the drain D1 of the first MOS transistor Q1 is coupled to the high potential terminal (a pin), the gate G1 of the first MOS transistor Q1 is coupled to the control terminal, the gate G2 of the second MOS transistor Q2, the source S2, the substrate 10 and the low potential terminal are coupled, the first doped region 31 is coupled to the drain terminal, and the low potential terminal is used for grounding.
Optionally, the integrated circuit in this embodiment may also be any integrated circuit that includes the transistor device and other internal devices, for example, an LED lighting driving chip that includes the transistor device and other internal devices, the LED lighting driving chip includes a plurality of pins, where the first doped region 31 is coupled to one pin (Pad1) of the integrated circuit, the other internal devices are coupled to the pin (Pad1) of the integrated circuit, the gate G2, the source, and the substrate 10 of the second MOS transistor Q2 are grounded through the ground pin (Pad2) of the integrated circuit, and when the pin (Pad1) of the integrated circuit receives a surge current, the second MOS transistor Q2 discharges the surge current to the ground, so that the first MOS transistor Q1 and the other internal devices are prevented from being damaged due to the surge current.
The transistor device in this embodiment includes a first MOS transistor Q1 and a second MOS transistor Q2, the source S1 of the first MOS transistor Q1 and the drain D2 of the second MOS transistor Q2 are formed in the first doped region 31 together, and the gate G2, the source, and the substrate 10 of the second MOS transistor Q2 are grounded, so that the second MOS transistor Q2 is monolithically integrated in the first MOS transistor Q1 and is connected in series with the first MOS transistor Q1, so that the second MOS transistor Q2 can discharge the surge current of the first transistor Q1 and a pin of the integrated circuit to the ground, thereby achieving ESD suppression on the first MOS transistor Q1 and the integrated circuit where the first MOS transistor Q1 is located, that is, the transistor device can only achieve surge suppression by itself without a surge protection device additionally connected, and solving the problem that ESD protection cannot be performed or the problem that the space occupied by the integrated circuit is large in the conventional technical solution.
Referring to fig. 3, in one embodiment, the semiconductor device further includes a substrate 10 and a first well 11 of a first conductivity type formed over the substrate 10, and a first doped region 31 is formed on an upper surface of the first well 11.
It should be understood that the substrate 10 in this embodiment is a semiconductor substrate 10, and may alternatively be a wafer substrate 10, a chip substrate 10, or a composite semiconductor substrate 10, and the substrate 10 in this embodiment is of a first conductivity type (P-), and the first doped region 31 is of a second conductivity type (N +).
Optionally, in this embodiment, ions (P-) of the first conductivity type are implanted onto the substrate 10 by ion implantation to form the first well region 11.
Referring to fig. 2 and 3, in one embodiment, the semiconductor device further includes a second well region 12 of the second conductivity type (N-), wherein the second well region 12 is formed on the substrate 10, the second well region 12 is disposed adjacent to the first well region 11, and the second well region 12 serves as a drain D1 of the first MOS transistor Q1.
It is to be understood that in the present embodiment, the second well region 12 may be formed by implanting ions of the second conductivity type onto the substrate 10 by means of ion implantation.
Referring to fig. 2, fig. 3 and fig. 4, in an embodiment, the method further includes: a second doped region 32 of the second conductivity type (N +) and a third doped region 33 of the first conductivity type (P +), where the second doped region 32 and the first doped region 31 are formed on the upper surface of the first well region 11 at intervals, the second doped region 32 includes a first number of first sub-regions 32-1, and each first sub-region 32-1 is shorted by a metal wire to become a source of the second MOS transistor Q2; the third doped region 33 and the first doped region 31 are formed on the upper surface of the first well region 11 at an interval, the third doped region 33 includes a first number of second sub-regions 33-1, each second sub-region 33-1 is short-circuited by a metal wire to become a body electrode of a transistor device, each first sub-region 32-1 and each second sub-region 33-1 are arranged at an interval along the length direction of the first doped region 31, and each first sub-region 32-1 and each second sub-region 33-1 together form a first number of PN junctions.
It should be understood that each first sub-region 32-1 and each second sub-region 33-1 in the present embodiment are sequentially adjacently disposed along the length direction of the first doped region 31 (i.e., the direction parallel to the upper surface of the substrate 10), so as to form a PN junction chain including a plurality of PN junctions, that is: first sub-region 32-1-second sub-region 33-1-. - _ first sub-region 32-1-second sub-region 33-1, or may be: second sub-region 33-1-first sub-region 32-1-. -second sub-region 33-1-first sub-region 32-1. The first number may be any desired number, and the first number is set to 3 in this embodiment, but may be set to other values in other embodiments.
It will be appreciated that the body of the transistor device also includes the first well region 11, i.e. the first well region 11 and the third doped region 33 together serve as the body of the transistor device.
It should be understood that this example is by adding
Referring to fig. 3, in one embodiment, a first polysilicon gate 21 is further included, the first polysilicon gate 21 is formed on the upper surface of the first well 11, the first polysilicon gate 21 is located above the region between the first doped region 31 and the second doped region 32, and the first polysilicon gate 21 is used as a gate G2 of the second MOS transistor Q2.
It should be understood that the first polysilicon gate 21 in the present embodiment is offset from the first doped region 31, and the first polysilicon gate 21 is offset from the second doped region 32.
In the transistor device in this embodiment, by disposing the first polysilicon gate 21, the first doped region 31, the second doped region 32, and the third doped region 33 relatively close to each other, the surge current introduced into the first doped region 31 can be quickly discharged in the transistor device.
Referring to fig. 3, in one embodiment, a gate oxide layer 41 is further included, and the gate oxide layer 41 is formed on a lower surface of the first polysilicon gate 21.
It is to be understood that the gate oxide layer 41 may be composed of silicon dioxide, and in particular, the silicon dioxide may be formed by a furnace oxidation method.
Referring to fig. 3, in an embodiment, the method further includes: a field oxide layer 42, wherein the field oxide layer 42 is formed on the upper surface of the second well region 12 and a portion of the upper surface of the first well region 11.
It should be understood that the field oxide layer 42 in the present embodiment may be made of silicon dioxide, and specifically, the silicon dioxide may be formed by a furnace oxidation method. The field oxide layer 42 may be an oxide layer having a certain slope shape, and optionally, the field oxide layer 42 may be etched into a preset shape by a directional etching method.
Referring to fig. 3, in one embodiment, a second polysilicon gate 22 is included, the second polysilicon gate 22 is formed on the upper surface of the field oxide layer 42, and the second polysilicon gate 22 is used as the gate G1 of the first MOS transistor Q1. It should be understood that the shape of the second polysilicon gate 22 corresponds to the shape of the field oxide layer 42.
Optionally, in an embodiment, the semiconductor device further includes an insulating layer, the insulating layer covers the exposed upper surfaces of the first doped region 31, the second doped region 32, the third doped region 33, the first polysilicon gate 21, the second polysilicon gate 22, the first well region 11, the second well region 12, and the like, the insulating layer is provided with a plurality of through holes, each through hole is filled with a conductive material, and two ends of each through hole are electrically connected through the conductive material. Furthermore, the device also comprises a first contact electrode, a second contact electrode, a third contact electrode and a fourth contact electrode, wherein the first contact electrode, the second contact electrode, the third contact electrode and the fourth contact electrode are arranged above the insulating layer, the first contact electrode, the second contact electrode, the third contact electrode and the fourth contact electrode can be made of metal materials, the first contact electrode is connected with the first well region 12 through a conductive substance filled in a first through hole of the insulating layer, the second contact electrode is connected with the second polysilicon gate 22 through a conductive substance filled in a second through hole of the insulating layer, the third contact electrode is connected with the first doped region 31 through a conductive substance filled in a third through hole of the insulating layer, and the fourth contact electrode is connected with the second doped region 32, the third doped region 33 and the first polysilicon gate 21 through a conductive substance filled in a fourth through hole of the insulating layer. Optionally, the first contact electrode serves as a high potential terminal of the transistor device (e.g., a drain electrode of the LDMOS transistor), the second contact electrode serves as a control terminal of the transistor device (e.g., a gate electrode of the LDMOS transistor), the third contact electrode serves as an ESD protection terminal of the transistor device, and the fourth contact electrode serves as a low potential terminal (ground terminal) of the transistor device.
In one embodiment, the method comprises the following steps: the first MOS transistor Q1 is an LDMOS device, and the second MOS transistor Q2 is a GGMOS device.
It should be understood that the first conductive type is P-type and the second conductive type is N-type in this embodiment, and in other embodiments, the first conductive type may be N-type and the second conductive type is P-type.
A second aspect of an embodiment of the invention provides an integrated circuit comprising a transistor device as described in the first aspect of an embodiment of the invention.
Alternatively, the integrated circuit in this embodiment may be a single transistor device integrated circuit, and when the integrated circuit is a single transistor device integrated circuit, the integrated circuit includes a high potential terminal, a control terminal, a low potential terminal, and a drain terminal, wherein the drain D1 of the first MOS transistor Q1 is coupled to the high potential terminal (a pin), the gate G1 of the first MOS transistor Q1 is coupled to the control terminal, the gate G2 of the second MOS transistor Q2, the source S2, the substrate 10 and the low potential terminal are coupled, the first doped region 31 is coupled to the drain terminal, and the low potential terminal is used for grounding.
Optionally, the integrated circuit in this embodiment may also be any integrated circuit that includes the transistor device and other internal devices, for example, an LED lighting driving chip that includes the transistor device and other internal devices, the LED lighting driving chip includes a plurality of pins, where the first doped region 31 is coupled to one pin (Pad1) of the integrated circuit, the other internal devices are coupled to the pin (Pad1) of the integrated circuit, the gate G2, the source, and the substrate 10 of the second MOS transistor Q2 are grounded through the ground pin (Pad2) of the integrated circuit, and when the pin (Pad1) of the integrated circuit receives a surge current, the second MOS transistor Q2 discharges the surge current to the ground, so that the first MOS transistor Q1 and the other internal devices are prevented from being damaged due to the surge current.
Referring to fig. 5, a third aspect of the embodiments of the present invention provides a method for manufacturing a transistor device, including:
step S100: forming a first well region 11 of a first conductivity type and a second well region 12 of a second conductivity type on a substrate 10 of the first conductivity type;
it is to be understood that the first well region 11 of the first conductivity type and the second well region 12 of the second conductivity type may be formed on the semiconductor substrate 10 by means of ion implantation;
step S200: growing a first silicon dioxide layer on the upper surface of the first well region 11 and the upper surface of the second well region 12, and forming a field oxide layer 42 by means of photoetching;
it will be appreciated that the field oxide layer 42 may be formed by photolithographic etching to etch away the excess portions of the first silicon dioxide layer, leaving only portions over the second well region 12 and over portions of the first well region 11.
Step S300: on the upper surface of the first well region 11, growing a second silicon dioxide layer to form a gate oxide layer 41 and form a first semi-finished structure of the transistor device;
it should be understood that the first semi-finished structure of the transistor device includes a stacked structure of the substrate, the first well region 11, the second well region 12, the field oxide layer 42, and the gate oxide layer 41, which are described above.
Step S400: depositing a polysilicon layer on the upper surface of the first semi-finished product structure, and defining a first polysilicon gate 21 and a second polysilicon gate 22 by using photoetching and etching methods;
it should be understood that after depositing a polysilicon layer on the upper surface of the first semi-finished structure, a photoresist layer (photoresist layer) is disposed on the polysilicon layer, the photoresist layer covers the polysilicon layer, the defined mask layer is placed on the photoresist layer, the photoresist layer is irradiated by light with a specific wavelength, and the photoresist layer is changed into a shape consistent with the shape defined by the mask layer through a corresponding washing solution, a first polysilicon region and a second polysilicon region are defined according to the shape of the photoresist layer, a first polysilicon gate 21 is directionally etched in the first polysilicon region, and a second polysilicon gate 22 is directionally etched in the second polysilicon region;
step S500: forming a first doped region 31 and a second doped region 32 of the same second conductivity type on the upper surface of the first well region 11 at intervals;
it should be understood that a first doped region 31 of the second conductivity type (N +) is formed on the upper surface of the first well region 11, the first doped region 31 is located in the middle region between the first polysilicon gate 21 and the second polysilicon gate 22, i.e., in the middle region between the first polysilicon gate 21 and the second polysilicon gate 22, ions (N +) of the second conductivity type are implanted on the upper surface of the first well region 11 to form a first doped region 31 of the second conductivity type, the first doped region 31 is located on one side of the first polysilicon gate 21 and is offset opposite to the first polysilicon gate 21, ions of the second conductivity type are implanted on the upper surface of the first well region 11 near the other side of the first polysilicon gate 21 to form a second doped region 32, the second doped region 32 is spaced opposite to the first doped region 31 and is offset opposite to the second polysilicon gate 21, the second doped region 32 includes a first sub-region 32-1 having a first number, the first sub-regions 32-1 are arranged at intervals along the length direction of the first doped region 31.
Step S600: a third doped region 33 of the first conductivity type is formed on the upper surface of the first well region 11 to form a second semi-finished structure of the transistor device, and the third doped region 33 and the second doped region 32 are arranged at intervals along the length direction of the first doped region 31;
it should be understood that the third doped region 33 includes a first number of second sub-regions 33-1, each of the second sub-regions 33-1 is arranged at intervals along the length direction of the first doped region 31, and each of the first sub-regions 32-1 and each of the second sub-regions 33-1 are adjacently disposed along the length direction of the first doped region; it will be appreciated that the first subregion 32-1 is located opposite the first doped region 31 and the second subregion 33-1 is located opposite the first doped region 31.
Optionally, each first sub-region 32-1 is shorted by a metal line, and ions of the second conductivity type are implanted into each first sub-region 32-1 to form a second doped region 32, each second sub-region 33-1 is shorted with the first well region 11 by another metal line, and ions of the first conductivity type are implanted into each second sub-region 33-1 to form a third doped region 33;
step S700: depositing a dielectric layer on the upper surface of the second semi-finished product structure, and opening a plurality of lead holes on the dielectric layer in a photoetching and etching mode;
it is to be understood that the dielectric layer is an insulating layer.
Step S800: depositing a metal layer on the dielectric layer, and defining a plurality of metal electrodes for external connection on the metal layer in a photoetching and etching mode;
it is to be understood that a plurality of metal electrodes are respectively connected to the second well region 12, the first polysilicon gate 21, the second polysilicon gate 22, the first doped region 31, the second doped region 32, and the third doped region 33.
The first doped region 31, the second polysilicon gate 22, the first well region 11 and the second well region 12 form a first MOS transistor Q1, the first well region 11, the first doped region 31, the second doped region 32, the third doped region 33 and the first polysilicon gate 21 form a second MOS transistor Q2, and the first MOS transistor Q1 and the second MOS transistor Q2 form a transistor device.
The above embodiments are only used to illustrate the technical solutions of the present application, and not to limit the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; such modifications and substitutions do not substantially depart from the spirit and scope of the embodiments of the present application and are intended to be included within the scope of the present application.

Claims (10)

1. A transistor device for an integrated circuit comprises a first MOS tube and a second MOS tube, wherein a source electrode of the first MOS tube and a drain electrode of the second MOS tube are jointly formed in a first doped region, the first doped region is coupled with a pin of the integrated circuit, a grid electrode, a source electrode and a substrate of the second MOS tube are grounded, and the second MOS tube is configured to discharge surge current of the pin and the first MOS tube.
2. The transistor device of claim 1, further comprising a substrate and a first well region of a first conductivity type formed over said substrate, said first doped region being formed at an upper surface of said first well region, said first doped region being of a second conductivity type.
3. The transistor device of claim 2, further comprising a second well region of a second conductivity type formed over the substrate and disposed adjacent to the first well region, the second well region serving as a drain of the first MOS transistor.
4. The transistor device of claim 3, further comprising:
the second doped region and the first doped region are formed on the upper surface of the first well region at intervals, the second doped region comprises a first number of first sub-regions, and each first sub-region is short-circuited into a source electrode of the second MOS transistor through a metal wire;
the third doped region and the first doped region are formed on the upper surface of the first well region at intervals, the third doped region comprises a first number of second sub-regions, each second sub-region is short-circuited through a metal wire to become a body electrode of the transistor device, the first sub-regions and the second sub-regions are arranged at intervals along the length direction of the first doped region, and the first sub-regions and the second sub-regions form PN junctions of the first number together.
5. The transistor device of claim 4, further comprising a first polysilicon gate formed on an upper surface of the first well region and located over a region between the first doped region and the second doped region, the first polysilicon gate functioning as a gate of the second MOS transistor.
6. The transistor device of claim 5, further comprising a gate oxide layer formed on a lower surface of said first polysilicon gate.
7. The transistor device of claim 6, further comprising: and the field oxide layer is formed on the upper surface of the second well region and part of the upper surface of the first well region.
8. The transistor device of claim 7, further comprising a second polysilicon gate formed on an upper surface of the field oxide layer, the second polysilicon gate serving as a gate of the first MOS transistor.
9. An integrated circuit, comprising: the transistor device of any of claims 1-8.
10. A method of fabricating a transistor device, comprising:
forming a first well region of a first conductivity type and a second well region of a second conductivity type on a substrate of the first conductivity type;
growing a first silicon dioxide layer on the upper surface of the first well region and the upper surface of the second well region, and forming a field oxide layer in a photoetching manner;
growing a second silicon dioxide layer on the upper surface of the first well region to form a gate oxide layer and form a first semi-finished product structure of the transistor device;
depositing a polysilicon layer on the upper surface of the first semi-finished product structure, and defining a first polysilicon gate and a second polysilicon gate by using photoetching and etching methods;
forming a first doped region and a second doped region which are both of a second conductivity type on the upper surface of the first well region at intervals;
forming a third doped region of the first conductivity type on the upper surface of the first well region to form a second semi-finished structure of the transistor device, wherein the third doped region and the second doped region are arranged at intervals along the length direction of the first doped region;
depositing a dielectric layer on the upper surface of the second semi-finished product structure, and opening a plurality of lead holes on the dielectric layer in a photoetching and etching mode;
depositing a metal layer on the dielectric layer, and defining a plurality of metal electrodes for external connection on the metal layer in a photoetching and etching mode;
the first doped region, the second polysilicon gate, the first well region and the second well region form a first MOS transistor, the first well region, the first doped region, the second doped region, the third doped region and the first polysilicon gate form a second MOS transistor, and the first MOS transistor and the second MOS transistor form the transistor device.
CN202010255413.XA 2020-04-02 2020-04-02 Integrated circuit, transistor device thereof and preparation method Pending CN113497024A (en)

Priority Applications (1)

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CN202010255413.XA CN113497024A (en) 2020-04-02 2020-04-02 Integrated circuit, transistor device thereof and preparation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010255413.XA CN113497024A (en) 2020-04-02 2020-04-02 Integrated circuit, transistor device thereof and preparation method

Publications (1)

Publication Number Publication Date
CN113497024A true CN113497024A (en) 2021-10-12

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Country Status (1)

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