CN113489553B - Method for measuring relation between reflection coefficient of intelligent reflecting surface and bias voltage - Google Patents

Method for measuring relation between reflection coefficient of intelligent reflecting surface and bias voltage Download PDF

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CN113489553B
CN113489553B CN202110761266.8A CN202110761266A CN113489553B CN 113489553 B CN113489553 B CN 113489553B CN 202110761266 A CN202110761266 A CN 202110761266A CN 113489553 B CN113489553 B CN 113489553B
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bias voltage
reflection coefficient
reflecting surface
intelligent reflecting
alpha
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CN113489553A (en
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党建
朱宏伟
张在琛
吴亮
朱秉诚
汪磊
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Southeast University
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B17/00—Monitoring; Testing
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
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Abstract

The invention discloses a method for measuring the relation between the reflection coefficient of an intelligent reflecting surface and bias voltage. Based on the constant characteristic of the channel in the channel coherence time, the controller firstly sets the bias voltage of the intelligent reflecting surface to be constant as reference voltage and then sets the bias voltage to be constant as any voltage value to be measured in the bias voltage range in the channel coherence time. The sending end sends a constant envelope signal, the receiving end receives the signal reflected by the intelligent reflecting surface, and the received signal is processed to obtain the ratio of the reflection coefficient corresponding to the bias voltage to be measured to the reflection coefficient corresponding to the reference bias voltage. In order to reduce the effect of noise on the measurement results, a plurality of samples of the received signal are averaged during the measurement. The invention provides a method for measuring the relation between the reflection coefficient and the bias voltage of an intelligent reflecting surface with low complexity and low cost.

Description

Method for measuring relation between reflection coefficient of intelligent reflecting surface and bias voltage
Technical Field
The invention belongs to the technical field of wireless communication, and particularly relates to a method for measuring the corresponding relation between an intelligent reflecting surface reflection coefficient and bias voltage.
Background
The demand for high-rate communication by mobile communication services has promoted the birth and application of 5 th generation mobile communication (5G) technology, and 5G communication systems are becoming an important component of a new generation of information infrastructure. While the 5G communication system is deployed in a large scale, the new problems of cost increase, power consumption increase and the like are faced. To solve these problems, new technical means are needed.
An Intelligent Reflection Surface (IRS), or a Reconfigurable Intelligent Surface (RIS), provides a feasible technical approach to solve the above problems. The IRS is a super-surface composed of a large number of low-cost passive elements, and can improve the transmission performance of a communication system by changing the propagation environment of electromagnetic waves. In conventional wireless communication, communication quality is affected by a propagation environment, i.e., a channel, which cannot be actively controlled and changed by a transmitting and receiving end. The IRS can change the propagation environment of the channel to a large extent through independently adjusting the reflection coefficient of each unit and the synergistic effect of a plurality of reflection units, so that the effect of actively regulating and controlling the channel is achieved.
In order to maximize the function of the IRS and improve the performance of the deployed IRS communication system, it is necessary to set the reflection coefficients of a large number of units of the IRS reasonably. Currently, each unit of the typical IRS is formed by a varactor diode and is connected to a main controller, and the main controller adjusts the bias voltage of the varactor diode to change the impedance of the unit, thereby adjusting the reflection coefficient of the signal. Therefore, before deploying the IRS in the communication system, the corresponding relationship between the bias voltage and the reflection coefficient of the IRS unit needs to be established in advance.
The existing reflection coefficient and bias voltage relation measuring scheme mainly comprises two types: one scheme is to obtain a relation graph of bias voltage and reflection coefficient through software simulation. In practice, due to errors of a plate making process and deviations of actual values and nominal values of electronic components, a result obtained by software simulation may have large deviations from the relationship between an actual reflection coefficient and bias voltage; another solution is to perform the measurement in a microwave dark room, which requires the use of specialized and expensive equipment and is therefore costly. In practical use, how to measure the relationship between IRS reflection phase and bias voltage easily and quickly at low cost is an important issue to be solved at present.
Disclosure of Invention
The invention aims to provide a method for measuring the relation between the reflection coefficient of an intelligent reflection surface and bias voltage, so as to solve the technical problem of simply and quickly measuring the relation between the IRS reflection phase and the bias voltage at low cost.
In order to solve the technical problems, the specific technical scheme of the invention is as follows:
a method for measuring the relation between the reflection coefficient of an intelligent reflecting surface and bias voltage comprises the following steps:
step 1, one transmitting antenna and NREach receiving antenna is respectively aligned with an intelligent reflecting surface with M units, NRNot less than 1; the continuous transmitting frequency of the transmitting end is fcOf (a) carrier signal x (t) ═ Acos2 pi fct, t is the signal duration, A is the carrier signal amplitude; the receiving end controls the bias voltage of the intelligent reflecting surface and samples the received signal; the bias voltages of all units are configured to be the same voltage value at the same time;
step 2, the bias voltage range of the intelligent reflecting surface is [ v ]0，vM]Wherein v is0Is the minimum value of the bias voltage, vMIs the bias voltage maximum; will bias the voltage v0Defined as a reference voltage, which corresponds to a reflection coefficient alpha0Defined as the reference reflection coefficient, measuring and calculating an arbitrary voltage vi∈[v0，vM]Corresponding reflection coefficient alphaiAnd alpha0The ratio of (A) to (B);
step 3, repeating the step 2 and constantly setting the bias voltage of the intelligent reflecting surface in the step 2 to be V0，vM]Obtaining reflection coefficients and alpha corresponding to different bias voltages at different voltage values0The relationship (2) of (c).
Further, in step 2, an arbitrary voltage v is measured and calculatedi∈[v0，vM]Corresponding reflection coefficient alphaiAnd alpha0The specific ratio of (A) to (B) specifically comprises the following steps:
step 2.1, the channel coherence time is T, and the channel coherence time is divided into T0And T1Two periods of time wherein T is satisfied0+T1T; in the channel coherence time T, the equivalent low-pass channel from the mth unit of the intelligent reflecting surface to the transmitting end antenna is recorded as TmThe equivalent low-pass channel from the mth unit of the intelligent reflector to the mth antenna of the receiver is recorded as
Figure BDA00031498825800000310
At T0During which the bias voltage of the intelligent reflecting surface is constantly set to v0To N, toRThe signal received by each receiving antenna is subjected to carrier demodulation and equal-interval sampling, and the number of sampling points is recorded as N0，N0Not less than 1; the sampling value is expressed as
Figure BDA0003149882580000031
Wherein
Figure BDA0003149882580000032
Is T0During which the receiving end demodulates and samples the kth sampling value of the signal received by the r antenna port,
Figure BDA0003149882580000033
is T0During the period of the k sampling value of the r radio frequency channel additive white Gaussian noise process; taking the mean value of the sample values of the received signal as the actual received signal
Figure BDA0003149882580000034
Is shown as
Figure BDA0003149882580000035
Step 2.2 at T1During the period, the bias voltage of the intelligent reflecting surface is constantly set to be v1，v1Corresponding reflection coefficient of alpha1(ii) a To NRSampling after demodulating the signal received by each receiving antenna, and recording the number of sampling points as N1，N1Is greater than or equal to 1, and the sampling value is expressed as
Figure BDA0003149882580000036
Wherein
Figure BDA0003149882580000037
Is T1During which the receiving end demodulates and samples the kth sampling value of the signal received by the r antenna port,
Figure BDA0003149882580000038
is T1During the period of the k sampling value of the r radio frequency channel additive white Gaussian noise process; taking a received signal N1The mean value of the individual sample values is used as the actual received signal of the r-th antenna
Figure BDA0003149882580000039
Is shown as
Figure BDA0003149882580000041
Step 2.3, the reflection coefficient relation is established as follows:
Figure BDA0003149882580000042
the above formula is v0And v1Alpha of the corresponding reflection coefficient0And alpha1The relationship (2) of (c).
Further, the carrier signal frequency f is traversedcRepeating the steps 1 to 3 to obtain different signal frequencies fcThe corresponding reflection coefficient versus bias voltage.
The invention discloses a method for measuring the relation between the reflection coefficient of an intelligent reflecting surface and bias voltage, which has the following advantages:
(1) compared with the existing measuring method, the method for measuring the relation between the reflection coefficient of the intelligent reflecting surface and the bias voltage has low requirement on the testing environment, does not need professional measuring environments such as a microwave darkroom and the like and professional equipment such as a waveguide simulator and the like, and reduces the cost of a measuring system.
(2) In the testing method provided by the invention, all unit bias voltages of the intelligent reflecting surface are the same at the same time, the design of a voltage control circuit used for testing is simpler, and the increase of the number of units does not improve the measurement complexity, so that the measuring scheme has universality for the intelligent reflecting surfaces with different numbers of units.
Drawings
FIG. 1 is a schematic diagram of an intelligent reflective surface reflectance measurement system of the present invention;
FIG. 2 is a diagram of the intelligent reflector bias voltage setting during the channel coherence time of the present invention;
FIG. 3 is a graph comparing the measurement results of the first and second embodiments with the theoretical results;
the notation in the figure is: 1. a sending end; 2. a receiving end; 3. a controller; 4. an intelligent transmitting surface; 5. a transmitting unit; 6. and a receiving antenna.
Detailed Description
In order to better understand the purpose, structure and function of the present invention, the following describes the method for measuring the relationship between the reflection coefficient of the intelligent reflection surface and the bias voltage in detail with reference to the accompanying drawings.
In the first embodiment, as shown in fig. 1, the measurement system for measuring the reflection coefficient of the intelligent reflection surface includes a transmitting end 1 configured with a horn antenna, and a configuration NR A receiving end 2 of each horn antenna and M unit intelligent reflecting surfaces 4. Wherein N isR3, M16. The bias voltage of the intelligent reflecting surface 4 is set to be 0V and 30V according to the maximum reverse working voltage of the variable capacitance diode in the intelligent reflecting surface transmitting unit 5]. The invention provides a method for measuring the relation between the reflection coefficient of an intelligent reflecting surface and bias voltage, which specifically comprises the following steps:
step 1, respectively aligning a transmitting antenna and three receiving antennas 6 to the intelligent reflecting surface 4. The continuous transmitting frequency of the transmitting end 1 is fcOf (a) carrier signal x (t) ═ Acos2 pi fct, a is the carrier signal amplitude. The receiving end 2 receives the signalAnd the reflection coefficient of the intelligent reflecting surface 4 is adjusted by the controller. In particular, the bias voltages of all cells are configured to be the same at the same time. The bias voltage 0V is used as a reference voltage and the corresponding reflection coefficient alpha0Defined as the reference reflection coefficient, measuring and calculating an arbitrary voltage vi∈[0V，30V]Corresponding reflection coefficient alphaiIn this embodiment, it is assumed that all reflection coefficients have a modulus value of 1;
step 2, assuming the channel coherence time is T, dividing it into T0And T1Two time periods, satisfy T0+T1T. As shown in fig. 1, in a certain channel coherence time T, equivalent low-pass channels from the mth transmitting unit 5 of the intelligent reflecting surface 4 to the transmitting end antenna and the mth receiving end antenna are respectively marked as TmAnd
Figure BDA0003149882580000051
as shown in fig. 2, at T0The bias voltage of the intelligent reflecting surface 4 is constantly set to 0V for NRThe signal received by the receiving antenna 6 is subjected to carrier demodulation and equal interval sampling, and the number of sampling points is recorded as N0，N 020. The sampling value is expressed as
Figure BDA0003149882580000052
Wherein
Figure BDA0003149882580000053
Is T0During which the receiving end demodulates and samples the kth sample of the signal received at the r-th antenna port,
Figure BDA0003149882580000061
is T0During which the kth sample of the r-th radio frequency channel additive white gaussian noise process. To reduce the effect of noise, the mean value of the sample values of the received signal is taken as the actual received signal
Figure BDA0003149882580000062
To representIs composed of
Figure BDA0003149882580000063
As shown in fig. 2, at T1The bias voltage of the intelligent reflecting surface 4 is constantly set to 2V in the period, and the reflection coefficient corresponding to the bias voltage 2V is assumed to be alpha1。NRSampling after demodulating the signal received by each receiving antenna, and recording the number of sampling points as N1,N1＝N0. The sampling value is expressed as
Figure BDA0003149882580000064
Wherein
Figure BDA0003149882580000065
Is T1During which the receiving end demodulates and samples the kth sampling value of the signal received by the r antenna port,
Figure BDA0003149882580000066
is T1During which the kth sample of the r-th radio frequency channel additive white gaussian noise process. Taking a received signal N1The mean value of the individual sample values is used as the actual received signal of the r-th antenna
Figure BDA0003149882580000067
Is shown as
Figure BDA0003149882580000068
The reflection coefficient relationship is established as:
Figure BDA0003149882580000069
the above expression is α of the reflection coefficient corresponding to the bias voltages 0V and 2V0And alpha1The relationship of (1);
step 3, repeating step 2 and repeating T in step 21The bias voltage of the intelligent reflecting surface is constantly set to 0V and 30V]The values of the bias voltages are shown in FIG. 3, and the reflection coefficients and alpha corresponding to different bias voltages under the same carrier signal frequency are obtained0The relationship of (1);
step 4, the reflection coefficient is not only related to the bias voltage, but also related to the carrier signal frequency. Optionally, the carrier signal frequency f is traversedcRepeating the steps 1, 2 and 3 to obtain different signal frequencies fcThe corresponding reflection coefficient versus bias voltage.
The second embodiment:
the system for measuring the reflection coefficient of the intelligent reflecting surface comprises a transmitting end 1 provided with a horn antenna and a configuration NR A receiving end 2 of each horn antenna and M unit intelligent reflecting surfaces 4. Wherein N isR1, and 16. The bias voltage of the intelligent reflecting surface 4 is set to be 0V and 30V according to the maximum reverse working voltage of the variable capacitance diode in the intelligent reflecting surface transmitting unit 5]. The invention provides a method for measuring the relation between the reflection coefficient of an intelligent reflecting surface and bias voltage, which specifically comprises the following steps:
step 1, respectively aligning a transmitting antenna and a receiving antenna 6 to an intelligent reflecting surface 4. The continuous transmitting frequency of the transmitting end 1 is fcOf (a) carrier signal x (t) ═ Acos2 pi fct, a is the carrier signal amplitude. The receiving end 2 controls the bias voltage of the intelligent reflecting surface 4 and samples the received signal. In particular, the bias voltages of all cells are configured to be the same at the same time. The bias voltage 0V is used as the reference voltage, and the corresponding reflection coefficient alpha0Defined as the reference reflection coefficient, measuring and calculating an arbitrary voltage vi∈[0V，30V]Corresponding reflection coefficient alphaiIn this embodiment, it is assumed that all reflection coefficients have a modulus value of 1;
step 2, assuming the channel coherence time is T, dividing it into T0And T1Two time periods in which T is satisfied0+T1T. In a certain channel coherence time T, the m unit of the intelligent reflecting surface 4 reaches the transmitting endThe equivalent low-pass channels of the line and the receiving end antenna are respectively marked as tmAnd gm. As shown in fig. 2, at T0During the period, the bias voltage of the intelligent reflecting surface 4 is constantly set to 0V, the signal received by the receiving antenna 6 is subjected to carrier demodulation and equal-interval sampling, and the number of sampling points is recorded as N0，N 01. The sample value is expressed as
Figure BDA0003149882580000071
Wherein y is0Is T0The receiving end demodulates and samples the signal received by the antenna port during the period, n0Is T0During which the sampling values of the radio frequency channel additive white gaussian noise process.
As shown in fig. 2, at T1The bias voltage of the intelligent reflecting surface 4 is constantly set to 2V in the period, and the reflection coefficient corresponding to the bias voltage 2V is assumed to be alpha1. To NRThe signal received by the receiving antenna 6 is sampled after demodulation, and the number of sampling points is recorded as N1，N1＝N0. The sampling value is expressed as
Figure BDA0003149882580000081
Wherein y is1Is T1The receiving end demodulates and samples the signal received by the port of the receiving antenna 6 during the period, n is the sampling value1Is T1During which the sampling values of the radio frequency channel additive white gaussian noise process.
The reflection coefficient relationship is established as:
Figure BDA0003149882580000082
alpha of reflection coefficient corresponding to 0V and 2V in the above formula0And alpha1The relationship of (1);
step 3, repeating step 2 and repeating T in step 21Bias voltage of intelligent reflecting surface 4 duringConstant setting to [0V, 30V]The bias voltage values of different voltages are shown in FIG. 3, and the reflection coefficients and alpha corresponding to different voltages are obtained0The relationship of (1);
step 4, optionally, traversing the carrier signal frequency fcRepeating the steps 1, 2 and 3 to obtain different signal frequencies fcThe corresponding reflection coefficient versus bias voltage.
FIG. 3 is a graph comparing the results of the first and second measurements with the theoretical results. Wherein three identifiers "□", "x" and "o" are respectively the theoretical reflection phase, embodiment NR＝3，N0Measurement of reflection phase at 20 hours and example two NR＝1，N0The reflection phase is measured as three curves at 1. As shown in fig. 3, the measured reflection phase of the first embodiment substantially coincides with the theoretical reflection phase. The measured reflection phase of the second embodiment has a certain deviation from the reference reflection phase.
It is to be understood that the present invention has been described with reference to certain embodiments, and that various changes in the features and embodiments, or equivalent substitutions may be made therein by those skilled in the art without departing from the spirit and scope of the invention. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the invention without departing from the essential scope thereof. Therefore, it is intended that the invention not be limited to the particular embodiment disclosed, but that the invention will include all embodiments falling within the scope of the appended claims.

Claims (2)

1. A method for measuring the relation between the reflection coefficient of an intelligent reflecting surface and bias voltage is characterized by comprising the following steps:
step 1, one transmitting antenna and NREach receiving antenna is respectively aligned with an intelligent reflecting surface with M units, NRNot less than 1; the continuous transmitting frequency of the transmitting end is fcOf (a) carrier signal x (t) ═ Acos2 pi fct, t is the signal duration, A is the carrier signal amplitude; the receiving end controls the bias voltage of the intelligent reflecting surface and samples the received signal; in thatThe bias voltages of all units are configured to be the same voltage value at the same time;
step 2, the bias voltage range of the intelligent reflecting surface is [ v ]0，vM]Wherein v is0Is the minimum value of the bias voltage, vMIs the bias voltage maximum; will bias the voltage v0Defined as a reference voltage, which corresponds to a reflection coefficient alpha0Defined as the reference reflection coefficient, measuring and calculating an arbitrary voltage vi∈[v0，vM]Corresponding reflection coefficient alphaiAnd alpha0The ratio of (A) to (B);
step 3, repeating the step 2 and constantly setting the bias voltage of the intelligent reflecting surface in the step 2 to be V0，vM]Obtaining reflection coefficients and alpha corresponding to different bias voltages at different voltage values0The relationship of (1);
measuring and calculating any voltage v in the step 2i∈[v0，vM]Corresponding reflection coefficient alphaiAnd alpha0The specific ratio of (A) to (B) specifically comprises the following steps:
step 2.1, the channel coherence time is T, and the channel coherence time is divided into T0And T1Two time periods in which T is satisfied0+T1T; in the channel coherence time T, the equivalent low-pass channel from the mth unit of the intelligent reflecting surface to the transmitting end antenna is recorded as TmThe equivalent low-pass channel from the mth unit of the intelligent reflector to the mth antenna of the receiver is recorded as
Figure FDA0003648854660000011
At T0During which the bias voltage of the intelligent reflecting surface is constantly set to v0To N, toRThe signal received by each receiving antenna is subjected to carrier demodulation and equal-interval sampling, and the number of sampling points is recorded as N0，N0Not less than 1; the sampling value is expressed as
Figure FDA0003648854660000012
k＝1，2，...，N0，r＝1，2，...，NR
Wherein
Figure FDA0003648854660000021
Is T0During which the receiving end demodulates and samples the kth sampling value of the signal received by the r antenna port,
Figure FDA0003648854660000022
is T0During the period of the k sampling value of the r radio frequency channel additive white Gaussian noise process; taking the mean value of the sample values of the received signal as the actual received signal
Figure FDA0003648854660000023
Is shown as
Figure FDA0003648854660000024
Step 2.2, at T1During the period, the bias voltage of the intelligent reflecting surface is constantly set to be v1，v1Corresponding reflection coefficient of alpha1(ii) a To NRSampling after demodulating the signal received by each receiving antenna, and recording the number of the sampling points as N1，N1Is greater than or equal to 1, and the sampling value is expressed as
Figure FDA0003648854660000025
k＝1，2，...，N1，r＝1，2，...，NR
Wherein
Figure FDA0003648854660000026
Is T1During which the receiving end demodulates and samples the kth sampling value of the signal received by the r antenna port,
Figure FDA0003648854660000027
is T1During the period of the k sampling value of the r radio frequency channel additive white Gaussian noise process; taking a received signal N1The mean value of the individual sample values is used as the actual received signal of the r-th antenna
Figure FDA0003648854660000028
Is shown as
Figure FDA0003648854660000029
Step 2.3, the reflection coefficient relation is established as follows:
Figure FDA00036488546600000210
the above formula is v0And v1Alpha of the corresponding reflection coefficient0And alpha1The relationship (2) of (c).
2. The method of claim 1, wherein the carrier signal frequency f is traversedcRepeating the steps 1 to 3 to obtain different signal frequencies fcThe corresponding reflection coefficient versus bias voltage.
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