CN113488753A - Terminal short circuit tap interdigital filter based on TSV (through silicon via) applied to millimeter wave band - Google Patents
Terminal short circuit tap interdigital filter based on TSV (through silicon via) applied to millimeter wave band Download PDFInfo
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- CN113488753A CN113488753A CN202110665933.2A CN202110665933A CN113488753A CN 113488753 A CN113488753 A CN 113488753A CN 202110665933 A CN202110665933 A CN 202110665933A CN 113488753 A CN113488753 A CN 113488753A
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- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
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- H01P1/205—Comb or interdigital filters; Cascaded coaxial cavities
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Abstract
The invention discloses a terminal short-circuit tap interdigital filter applied to a millimeter wave band based on TSV, which comprises a silicon substrate, wherein a silicon dioxide layer is arranged above the silicon substrate, and a grounding metal plate is arranged below the silicon substrate; and metal wire RDL are distributed on the silicon dioxide layer, TSV cylinders are distributed in the silicon substrate, and the TSV cylinders are respectively connected with the metal wire RDL and the grounding metal plate. The invention has higher integration level after reducing the area of the filter, can realize the filtering under the W wave band and simultaneously improves the independence of the filter.
Description
Technical Field
The invention belongs to the technical field of filters, and relates to a terminal short-circuit tap interdigital filter applied to a millimeter wave band based on TSV.
Background
In the development of modern wireless communication technology, people have increasingly high requirements on data transmission delay, transmission efficiency and stability, in the communication of the modern 5G technology, because abundant undeveloped spectrum resources exist in a millimeter wave band and the millimeter wave band has a wide bandwidth, the requirement of people on high-speed transmission can be met, and on the other hand, because the wavelength of millimeter waves is small, the requirement on design miniaturization in a communication system is more easily met.
Millimeter wave filters are used as important components in modern wireless communication processes, are widely applied to various microwave and millimeter wave systems, and play an irreplaceable role in the systems, wherein a band-pass filter refers to a filter which can pass frequency components in a certain frequency range, but shield or attenuate frequency components in other ranges to an extremely low level. The band-pass filter can be mainly divided into four structures of a direct coupling or 1/4 wavelength coupling resonance filter, a parallel coupling band-pass filter, an interdigital band-pass filter and a comb line band-pass filter. The structure adopts an interdigital band-pass filter, is designed by using a terminal short circuit structure, and is applied to a millimeter wave interdigital filter with a W waveband.
The TSV technology is taken as an important technology of the current 3D-IC, firstly, the TSV has the characteristic of miniaturization, and the size is usually in the micron order; the TSV has the characteristic of being integratable, and the TSV manufacturing process can be integrated to different stages of a chip manufacturing process according to the requirements of people; and the TSV has good reliability, and has good reliability in the aspects of mechanical strength, thermal stress, heat dissipation and the like.
Disclosure of Invention
The invention aims to provide a terminal short-circuit tap interdigital filter applied to a millimeter wave band based on TSV.
The technical scheme adopted by the invention is that the terminal short-circuit tap interdigital filter applied to the millimeter wave band based on the TSV comprises a silicon substrate, wherein a silicon dioxide layer is arranged above the silicon substrate, and a grounding metal plate is arranged below the silicon substrate; and metal wire RDL are distributed on the silicon dioxide layer, TSV cylinders are distributed in the silicon substrate, and the TSV cylinders are respectively connected with the metal wire RDL and the grounding metal plate.
The invention is also characterized in that:
the metal wire RDL comprises a first resonance RDL, a second resonance RDL, a third resonance RDL, a fourth resonance RDL, a fifth resonance RDL, a sixth resonance RDL and a seventh resonance RDL which are arranged on the silicon dioxide layer in a parallel and staggered mode;
the TSV cylinders comprise a first TSV cylinder, a second TSV cylinder, a third TSV cylinder, a fourth TSV cylinder, a fifth TSV cylinder, a sixth TSV cylinder and a seventh TSV cylinder which are arranged on the silicon substrate along the vertical direction;
the short-circuit end of the first resonant RDL is connected with the upper end of the first TSV cylinder; the short-circuit end of the second resonance RDL is connected with the upper end of the second TSV cylinder; the short-circuit end of the third resonant RDL is connected with the upper end of a third TSV cylinder; the short-circuit end of the fourth resonant RDL is connected with the upper end of the fourth TSV cylinder; the short-circuit end of the fifth resonance RDL is connected with the upper end of the fifth TSV cylinder; the short-circuit end of the sixth resonant RDL is connected with the upper end of the sixth TSV cylinder; the short-circuit end of the seventh resonant RDL is connected with the upper end of the seventh TSV cylinder;
the lower end of the first TSV cylinder, the lower end of the second TSV cylinder, the lower end of the third TSV cylinder, the lower end of the fourth TSV cylinder, the lower end of the fifth TSV cylinder, the lower end of the sixth TSV cylinder and the lower end of the seventh TSV cylinder are all connected with the grounding metal plate.
The short-circuit end of the first resonance RDL and the short-circuit end of the second resonance RDL, the short-circuit end of the second resonance RDL and the short-circuit end of the third resonance RDL, the short-circuit end of the third resonance RDL and the short-circuit end of the fourth resonance RDL, the short-circuit end of the fourth resonance RDL and the short-circuit end of the fifth resonance RDL, the short-circuit end of the fifth resonance RDL and the short-circuit end of the sixth resonance RDL, and the short-circuit end of the sixth resonance RDL and the short-circuit end of the seventh resonance RDL are arranged in a staggered mode.
The RDL tap input is connected to the first resonance RDL; and the seventh resonance RDL is connected with the RDL tap output.
The first TSV cylinder, the second TSV cylinder, the third TSV cylinder, the fourth TSV cylinder, the fifth TSV cylinder, the sixth TSV cylinder and the seventh TSV cylinder are identical in structure and respectively comprise TSV copper cylinder bodies, and TSV outer surrounding insulating layers wrap the outer walls of the TSV copper cylinder bodies.
The terminal short-circuit tap interdigital filter based on the TSV applied to the millimeter wave band has the advantages that the area of the filter is reduced, the integration level is high, and the independence of the filter is improved. The millimeter wave filter has the advantages that the wide bandwidth of the millimeter wave filter is realized on the premise of ensuring the passband characteristics, the millimeter wave filter has good out-of-band rejection characteristics under low frequency and high frequency, the insertion loss is less than 1.3dB, and the return loss is less than 20 dB. And by utilizing the excellent electrical characteristics of the TSV, a signal transmission path is shortened, and the speed of millimeter wave signal transmission is increased. Compared with a common millimeter wave filter, after the millimeter wave filter is realized by using the TSV, the filter has larger relative bandwidth, a compact structure and simple design, can be used as an independent component, can also be interconnected with a chip by using the RDL on the substrate, promotes three-dimensional integrated packaging, and is widely applied to various wireless communication systems.
Drawings
FIG. 1 is a top view of a terminal short-circuited tap interdigital filter based on TSV application in the millimeter wave band in accordance with the present invention;
FIG. 2 is a cross-sectional view of a third resonant RDL of a shorted-ended tap interdigital filter in the millimeter wave band based on TSV according to the present invention, in cylindrical connection with a third TSV;
FIG. 3 is a three-dimensional view of the end short tap interdigital filter based on TSV application of the present invention to the millimeter wave band;
FIG. 4 is a schematic structural diagram of a TSV cylinder in a terminal short-circuited tap interdigital filter based on TSV application in the present invention.
In the figure, 1, RDL tap input, 2, first resonant RDL, 3, first TSV cylinder, 4, second resonant RDL, 5, third resonant RDL, 6, third TSV cylinder, 7, fourth resonant RDL, 8, fifth resonant RDL, 9, fifth TSV cylinder, 10, sixth resonant RDL, 11, seventh TSV cylinder, 12, seventh resonant RDL, 13, RDL tap output, 14, sixth TSV cylinder, 15, fourth TSV cylinder, 16, second TSV cylinder, 17, silicon dioxide layer, 18, silicon substrate, 19, grounded metal plate, 20, TSV copper cylinder, 21, and TSV outer surrounding insulating layer.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
The invention is applied to the terminal short-circuit tap interdigital filter of the millimeter wave band based on TSV (through silicon via), as shown in figures 1 and 3, the interdigital filter comprises a silicon substrate 18, a silicon dioxide layer 17 is arranged above the silicon substrate 18, and a grounding metal plate 19 is arranged below the silicon substrate 18; the silicon dioxide layer 17 is provided with a first resonance RDL2, a second resonance RDL4, a third resonance RDL5, a fourth resonance RDL7, a fifth resonance RDL8, a sixth resonance RDL10 and a seventh resonance RDL12 in a parallel and staggered manner;
a first TSV cylinder 3, a second TSV cylinder 16, a third TSV cylinder 6, a fourth TSV cylinder 15, a fifth TSV cylinder 9, a sixth TSV cylinder 14 and a seventh TSV cylinder 11 are respectively arranged in the silicon substrate 18 along the vertical direction;
the short-circuit end of the first resonant RDL (Redistribution Layer) 2 is connected with the upper end of the first TSV cylinder 3; the short-circuited end of the second resonant RDL4 is connected to the upper end of the second TSV cylinder 16; the short-circuit end of the third resonant RDL5 is connected with the upper end of the third TSV cylinder 6; the short-circuit end of the fourth resonant RDL7 is connected with the upper end of the fourth TSV cylinder 15; the short-circuit end of the fifth resonant RDL8 is connected with the upper end of the fifth TSV cylinder 9; the short-circuited end of the sixth resonant RDL10 is connected to the upper end of the sixth TSV cylinder 14; the short-circuit end of the seventh resonant RDL12 is connected with the upper end of the seventh TSV cylinder 11;
the lower end of the first TSV cylinder 3, the lower end of the second TSV cylinder 16, the lower end of the third TSV cylinder 6, the lower end of the fourth TSV cylinder 15, the lower end of the fifth TSV cylinder 9, the lower end of the sixth TSV cylinder 14 and the lower end of the seventh TSV cylinder 11 are all connected with the grounding metal plate 19.
The short-circuit end of the first resonance RDL2 and the short-circuit end of the second resonance RDL4, the short-circuit end of the second resonance RDL4 and the short-circuit end of the third resonance RDL5, the short-circuit end of the third resonance RDL5 and the short-circuit end of the fourth resonance RDL7, the short-circuit end of the fourth resonance RDL7 and the short-circuit end of the fifth resonance RDL8, the short-circuit end of the fifth resonance RDL8 and the short-circuit end of the sixth resonance RDL10, and the short-circuit end of the sixth resonance RDL10 and the short-circuit end of the seventh resonance RDL12 are arranged in a staggered mode.
The first resonance RDL2 is connected with an RDL tap input 1; RDL tap output 13 is connected to seventh resonant RDL 12.
The first TSV cylinder 3, the second TSV cylinder 16, the third TSV cylinder 6, the fourth TSV cylinder 15, the fifth TSV cylinder 9, the sixth TSV cylinder 14 and the seventh TSV cylinder 11 have the same structure, and as shown in fig. 4, all include a TSV copper cylinder 20, and the outer wall of the TSV copper cylinder 20 is wrapped by a TSV outer surrounding insulating layer 21.
As shown in fig. 2, taking the connection of the third resonant RDL5 and the third TSV cylinder 6 as an example, the third TSV cylinder 6 is disposed in the silicon substrate 18, the TSV copper pillar 20 of the third TSV cylinder 6 is connected to the third resonant RDL5, and the TSV outer surrounding insulating layer 21 is wrapped around the outer wall of the TSV copper pillar 20 of the third TSV cylinder 6. The material of the TSV outer surrounding insulating layer 21 is silicon dioxide.
The thickness of the silicon dioxide layer 17 is 5 μm;
a silicon substrate 18 is selected as a dielectric substrate (the thickness of the dielectric substrate is 100 mu m), and a Tfirst TSV cylinder 3, a second TSV cylinder 16, a third TSV cylinder 6, a fourth TSV cylinder 15, a fifth TSV cylinder 9, a sixth TSV cylinder 14 and a seventh TSV cylinder 11 are buried in the silicon substrate 18;
the thickness of the grounding metal plate 19 is 3 μm;
the device comprises a first resonance RDL2, a second resonance RDL4, a third resonance RDL5, a fourth resonance RDL7, a fifth resonance RDL8, a sixth resonance RDL10 and a seventh resonance RDL12, energy coupling is carried out between two adjacent resonance RDLs through a ground capacitor and an adjacent RDL wiring interlayer capacitor, an input signal is input from an RDL tap 1 and passes through seven RDL metal wires, the filtering effect on a required signal is completed, and a filtering signal is output through an RDL tap 13;
the filter is of 7-order and is provided with 7 resonant RDLs, the lengths of metal wiring layers of a first resonant RDL2 and a seventh resonant RDL12 are 314.33 microns, the width of each metal wiring layer of the RDLs is 10 microns, and the thickness of each metal wiring layer of the RDLs is 3 microns;
the length of the metal wiring layer sections of the second to sixth resonant RDLs is 250.67 μm, the width of the RDL metal wiring layer is 10 μm, and the thickness of the RDL metal wiring layer is 3 μm;
as shown in fig. 4, the radius of the TSV copper pillar 20 is 4.7 μm, the thickness of the TSV outer surrounding insulating layer 21 is 0.3 μm, and the height of the TSV copper pillar 20 is 100 μm;
in FIG. 1, the distance between the first resonance RDL2 and the second resonance RDL4 is 20 μm, and the position of the first resonance RDL2 is 28 μm behind the short-circuited end of the second resonance RDL 4; the distance between the second resonance RDL4 and the third resonance RDL5 is 35.33 μm, and the position of the third resonance RDL5 is 42 μm behind the short-circuit end of the second resonance RDL 4; the distance between the third resonance RDL5 and the fourth resonance RDL7 is 40.67 mu m, and the position of the short-circuit end of the fourth resonance RDL7 is 42 mu m before the short-circuit end of the third resonance RDL 5; the distance between the fifth resonance RDL8 and the fourth resonance RDL7 is 40.67 mu m, and the position of the fifth resonance RDL8 is 42 mu m behind the short-circuit end of the fourth resonance RDL 7; the distance between the sixth resonance RDL10 and the fifth resonance RDL8 is 35.33 μm, and the position of the short-circuit end of the sixth resonance RDL is 42 μm behind the fifth RDL section; the sixth resonant RDL10 is located at a distance of 20 μm from the seventh resonant RDL12, and the seventh resonant RDL12 is located 28 μm behind the short-circuited end of the sixth resonant RDL 10.
Each TSV cylinder is located at the short circuit end of each RDL metal wiring layer; the TSV cylinders are subjected to energy coupling through a capacitor and the RDL wiring layer, and the first TSV cylinder 3 and the seventh TSV cylinder 11 are symmetrical;
the second TSV cylinder 16 is symmetrical to the sixth TSV cylinder 14, and the third TSV cylinder 6 is symmetrical to the fifth TSV cylinder 9;
the distance between the circle center of the first TSV cylinder 3 and the short-circuited end of the first resonance RDL2 is 5.66 mu m;
the distance between the center of the second TSV cylinder 16 and the short-circuited end of the second resonance RDL4 is 6.67 microns;
the distance between the center of the third TSV cylinder 6 and the short-circuit end of the third resonance RDL5 is 6 microns;
the distance between the center of the fourth TSV cylinder 15 and the short-circuited end of the fourth resonant RDL7 is 6.67 microns;
the distance between the center of the fifth TSV cylinder 9 and the short-circuit end of the fifth resonance RDL8 is 6 microns;
the distance between the center of the sixth TSV cylinder 14 and the short-circuited end of the sixth resonant RDL10 is 6.67 μm;
the distance between the center of the seventh TSV cylinder 11 and the short-circuited end of the seventh resonance RDL12 is 5.56 microns;
the invention adopts lines with equal impedance as the resonance rods of the interdigital filter, prolongs the short-circuit end of each resonance RDL, adopts a staggered arrangement to optimize the millimeter wave interdigital filter, and greatly improves the bandwidth of the filter and the performance of the interdigital filter on the premise of finishing the filtering of the millimeter wave filter. The high-frequency broadband high-power broadband optical fiber has high out-of-band rejection characteristics at the same time under low frequency and high frequency, the insertion loss is less than 1.3dB, and the return loss is less than 20 dB.
Claims (5)
1. A terminal short circuit tap interdigital filter based on TSV is applied to a millimeter wave band, and is characterized in that: the silicon substrate is provided with a silicon dioxide layer, and a grounding metal plate is arranged below the silicon substrate; and metal wire RDL are distributed on the silicon dioxide layer, TSV cylinders are distributed in the silicon substrate, and the TSV cylinders are respectively connected with the metal wire RDL and the grounding metal plate.
2. The TSV-based dead-end tap interdigital filter applied to the millimeter wave band, according to claim 1, wherein: the metal wire RDL comprises a first resonance RDL, a second resonance RDL, a third resonance RDL, a fourth resonance RDL, a fifth resonance RDL, a sixth resonance RDL and a seventh resonance RDL which are arranged on the silicon dioxide layer in a parallel and staggered mode;
the TSV cylinders comprise a first TSV cylinder, a second TSV cylinder, a third TSV cylinder, a fourth TSV cylinder, a fifth TSV cylinder, a sixth TSV cylinder and a seventh TSV cylinder which are arranged on the silicon substrate along the vertical direction;
the short-circuit end of the first resonant RDL is connected with the upper end of the first TSV cylinder; the short-circuit end of the second resonance RDL is connected with the upper end of the second TSV cylinder; the short-circuit end of the third resonant RDL is connected with the upper end of a third TSV cylinder; the short-circuit end of the fourth resonant RDL is connected with the upper end of the fourth TSV cylinder; the short-circuit end of the fifth resonance RDL is connected with the upper end of the fifth TSV cylinder; the short-circuit end of the sixth resonant RDL is connected with the upper end of the sixth TSV cylinder; the short-circuit end of the seventh resonant RDL is connected with the upper end of the seventh TSV cylinder;
the lower end of the first TSV cylinder, the lower end of the second TSV cylinder, the lower end of the third TSV cylinder, the lower end of the fourth TSV cylinder, the lower end of the fifth TSV cylinder, the lower end of the sixth TSV cylinder and the lower end of the seventh TSV cylinder are all connected with the grounding metal plate.
3. The TSV-based dead-end tap interdigital filter applied to the millimeter wave band, according to claim 2, wherein: the short-circuit end of the first resonance RDL and the short-circuit end of the second resonance RDL, the short-circuit end of the second resonance RDL and the short-circuit end of the third resonance RDL, the short-circuit end of the third resonance RDL and the short-circuit end of the fourth resonance RDL, the short-circuit end of the fourth resonance RDL and the short-circuit end of the fifth resonance RDL, the short-circuit end of the fifth resonance RDL and the short-circuit end of the sixth resonance RDL, and the short-circuit end of the sixth resonance RDL and the short-circuit end of the seventh resonance RDL are arranged in a staggered mode.
4. The TSV-based dead-end tap interdigital filter applied to the millimeter wave band, according to claim 2, wherein: the first resonant RDL is connected with an RDL tap input; and the seventh resonance RDL is connected with the RDL tap output.
5. The TSV-based dead-end tap interdigital filter applied to the millimeter wave band, according to claim 2, wherein: the first TSV cylinder, the second TSV cylinder, the third TSV cylinder, the fourth TSV cylinder, the fifth TSV cylinder, the sixth TSV cylinder and the seventh TSV cylinder are identical in structure and respectively comprise TSV copper cylinder bodies, and TSV outer surrounding insulating layers wrap the outer walls of the TSV copper cylinder bodies.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110665933.2A CN113488753A (en) | 2021-06-16 | 2021-06-16 | Terminal short circuit tap interdigital filter based on TSV (through silicon via) applied to millimeter wave band |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110665933.2A CN113488753A (en) | 2021-06-16 | 2021-06-16 | Terminal short circuit tap interdigital filter based on TSV (through silicon via) applied to millimeter wave band |
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| CN113488753A true CN113488753A (en) | 2021-10-08 |
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| CN202110665933.2A Pending CN113488753A (en) | 2021-06-16 | 2021-06-16 | Terminal short circuit tap interdigital filter based on TSV (through silicon via) applied to millimeter wave band |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN212874710U (en) * | 2020-09-28 | 2021-04-02 | 杭州友旺电子有限公司 | Thin film filter |
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2021
- 2021-06-16 CN CN202110665933.2A patent/CN113488753A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN212874710U (en) * | 2020-09-28 | 2021-04-02 | 杭州友旺电子有限公司 | Thin film filter |
Non-Patent Citations (2)
| Title |
|---|
| WEI ZHONG 等: ""Miniaturized Millimeter-Wave Silicon-based Transceiver System-in-Package for FMCW Radar"", 《2018 11TH UK-EUROPE-CHINA WORKSHOP ON MILLIMETER WAVES AND TERAHERTZ TECHNOLOGIES (UCMMT)》 * |
| 翟琼华等: "一种硅基MEMS微波SIR交指带通滤波器", 《微电子学》 * |
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