CN113478809A - 微纳结构的增材制造方法 - Google Patents
微纳结构的增材制造方法 Download PDFInfo
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- CN113478809A CN113478809A CN202110761096.3A CN202110761096A CN113478809A CN 113478809 A CN113478809 A CN 113478809A CN 202110761096 A CN202110761096 A CN 202110761096A CN 113478809 A CN113478809 A CN 113478809A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 239000002086 nanomaterial Substances 0.000 title claims abstract description 34
- 239000000654 additive Substances 0.000 title claims abstract description 27
- 230000000996 additive effect Effects 0.000 title claims abstract description 27
- 230000005684 electric field Effects 0.000 claims abstract description 49
- 239000000463 material Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 230000007646 directional migration Effects 0.000 claims abstract description 10
- 230000009471 action Effects 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 23
- 230000005012 migration Effects 0.000 claims description 8
- 238000013508 migration Methods 0.000 claims description 8
- 239000011148 porous material Substances 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 7
- 238000009826 distribution Methods 0.000 claims description 6
- 229910010272 inorganic material Inorganic materials 0.000 claims description 5
- 239000011147 inorganic material Substances 0.000 claims description 5
- 239000011368 organic material Substances 0.000 claims description 5
- 239000002131 composite material Substances 0.000 claims description 4
- 238000012387 aerosolization Methods 0.000 claims description 2
- 238000007639 printing Methods 0.000 abstract description 59
- 238000005516 engineering process Methods 0.000 abstract description 7
- 238000010894 electron beam technology Methods 0.000 abstract description 3
- 238000010884 ion-beam technique Methods 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 239000012071 phase Substances 0.000 description 42
- 239000006185 dispersion Substances 0.000 description 12
- 239000007789 gas Substances 0.000 description 12
- 239000007769 metal material Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000001878 scanning electron micrograph Methods 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000010146 3D printing Methods 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 238000001856 aerosol method Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000003042 antagnostic effect Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052713 technetium Inorganic materials 0.000 description 1
- GKLVYJBZJHMRIY-UHFFFAOYSA-N technetium atom Chemical compound [Tc] GKLVYJBZJHMRIY-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C64/00—Additive manufacturing, i.e. manufacturing of three-dimensional [3D] objects by additive deposition, additive agglomeration or additive layering, e.g. by 3D printing, stereolithography or selective laser sintering
- B29C64/10—Processes of additive manufacturing
- B29C64/106—Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material
- B29C64/112—Processes of additive manufacturing using only liquids or viscous materials, e.g. depositing a continuous bead of viscous material using individual droplets, e.g. from jetting heads
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C64/00—Additive manufacturing, i.e. manufacturing of three-dimensional [3D] objects by additive deposition, additive agglomeration or additive layering, e.g. by 3D printing, stereolithography or selective laser sintering
- B29C64/10—Processes of additive manufacturing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F10/00—Additive manufacturing of workpieces or articles from metallic powder
- B22F10/10—Formation of a green body
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F10/00—Additive manufacturing of workpieces or articles from metallic powder
- B22F10/80—Data acquisition or data processing
- B22F10/85—Data acquisition or data processing for controlling or regulating additive manufacturing processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C64/00—Additive manufacturing, i.e. manufacturing of three-dimensional [3D] objects by additive deposition, additive agglomeration or additive layering, e.g. by 3D printing, stereolithography or selective laser sintering
- B29C64/30—Auxiliary operations or equipment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y40/00—Auxiliary operations or equipment, e.g. for material handling
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y50/00—Data acquisition or data processing for additive manufacturing
- B33Y50/02—Data acquisition or data processing for additive manufacturing for controlling or regulating additive manufacturing processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y70/00—Materials specially adapted for additive manufacturing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
- B82B3/0004—Apparatus specially adapted for the manufacture or treatment of nanostructural devices or systems or methods for manufacturing the same
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/06—Making metallic powder or suspensions thereof using physical processes starting from liquid material
- B22F9/08—Making metallic powder or suspensions thereof using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying
- B22F9/082—Making metallic powder or suspensions thereof using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying atomising using a fluid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/14—Making metallic powder or suspensions thereof using physical processes using electric discharge
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y10/00—Processes of additive manufacturing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y70/00—Materials specially adapted for additive manufacturing
- B33Y70/10—Composites of different types of material, e.g. mixtures of ceramics and polymers or mixtures of metals and biomaterials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y80/00—Products made by additive manufacturing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/25—Process efficiency
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- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Cold Cathode And The Manufacture (AREA)
Abstract
本发明提供了微纳结构的增材制造方法,基于电场作用操控气体中带电分散相的定向迁移,使所述带电分散相在基底上堆垛形成特定微纳结构。本发明的微纳结构增材制造技术不借助化学反应、无需激光源、无需离子/电子束、无需光敏材料,可常温常压操作,所提供的技术方案能够以低成本、高纯度、多材料、超高分辨率、超快速和一次性大面积打印微纳结构,可解决微纳尺度增材制造中所面临的打印材料种类少、打印分辨率低、打印速度慢和序列式打印等难题。
Description
技术领域
本发明涉及微纳尺度的打印领域,特别是涉及微纳结构的增材制造方法。
背景技术
微纳增材制造(亦称为微纳尺度3D打印)是一种基于增材原理制造微纳结构的新型微纳加工技术。与现有微纳制造技术相比,它具有成本低、结构简单、可用材料种类多、无需激光、无需真空、无需液态试剂、直接成形等优点,尤其是在复杂三维微纳结构、高深宽比微纳结构、多材料和多尺度的微纳结构、平行模式打印多个微纳结构以及嵌入异质结构制造方面具有突出的潜力和优势。
但是,现有的各种微纳尺度打印具有一定的局限性。如微立体光刻打印材料单一,分辨率较低,尤其对于必须支撑材料的结构难以实现打印;双光子聚合激光直写虽然具有高分辨率,但是打印成本较高、打印速度慢;电喷印打印对电流体的特性要求高,且存在喷嘴堵塞、流体杂质和无法一次性同时打印多个阵列结构等问题。电子束和离子束打印虽可达微纳尺度,但打印材料单一、打印极慢、操作条件和前驱体材料要求苛刻等。更重要的是,以上的微纳尺度打印技术无法实现对金属材料的快速打印和平行打印,而金属材料的力学和导电性能等具有独特的优势,金属材料的微纳制造对微电子、超构材料和光子晶体等的研究具有极为重要的意义。
为满足科学和实际需求,需开发新型的微纳尺度打印增材制造方法、工艺和装备,实现多材料、平行模式、大面积的微纳结构的快速打印。
发明内容
鉴于以上所述现有技术的缺点,本发明的目的在于提供一种微纳结构的增材制造方法,用于解决现有技术中难以多材料、快速、以平行模式打印等问题。
为实现上述目的及其他相关目的,本发明是通过包括如下技术方案实现的。
本发明提供一种微纳结构的增材制造方法,基于电场作用操控气体中带电分散相的定向迁移,使所述带电分散相在基底上堆垛形成所需的微纳结构。
优选地,所述带电分散相的尺寸为0.1nm~10μm。
优选地,所述带电分散相的材料选自无机材料、有机材料和复合材料中的一种或多种。
优选地,所述基底上罩设有镂空图案层,所述带电分散相在迁移过程中穿过所述镂空图案层中的孔道迁移至基底上。
优选地,所述电场作用的强度为1~10000V/cm或-10000~-1V/cm。
优选地,通过调控电场作用的分布和强度、基底的运动,控制打印的形状和尺寸。
优选地,所述气体的使用量为0.1~100L/min。
优选地,所述电场作用使得所述气体中的带电分散相产生定向迁移。
优选地,所述基底连接外部电路。
优选地,所述导电分散相通过放电等离子体技术、气雾化法或者电喷雾手段制备。
本发明提供的微纳结构的增材制造方法,具有以下有益效果:
1)整个打印过程可直接在常温常压下进行,极大地简化了设备配置,降低了成本,拓宽了操作范围和材料选择。
2)整个打印过程由电场和带电分散相本身控制,不引入任何其他杂质,所打印的结构均匀性和纯度高。
3)所使用的气体中的分散相材料种类广泛,使打印材料具有多种性。
4)气体中分散相的迁移至少是对应液相中的三个数量级,使打印具备超快动力学特征,并可大面积一次性打印微纳结构阵列,使打印具有快速度和高效率。
5)使用电场精确控制带电分散相的迁移,可实现单颗粒甚至单原子的打印分辨率,打印精度为(0.1nm~1μm)。
本发明提供一种微纳结构的增材制造技术,能够以实现低成本、高纯度、多材料的、超高分辨率、超快速和一次性大面积打印微纳结构,可解决微纳尺度下可打印材料种类少、打印分辨率低、打印速度慢和序列式打印等难题。
附图说明
图1显示为基于本发明的增材制造方法的机理的形成的3D打印机的原理示意图。
图2显示为基于本发明的增材制造方法所打印成的一种具体的3D微纳结构产品的SEM图之一。
图3显示为基于本发明的增材制造方法所打印成的一种具体的3D微纳结构产品的SEM图之二。
图4显示为基于本发明的增材制造方法所打印成的一种具体的3D微纳结构产品的SEM图之三。
具体实施方式
以下由特定的具体实施例说明本发明的实施方式,用于验证本发明方法的现实可行性,熟悉此技术的人士可由本说明书所揭露的内容轻易地了解本发明的其他优点及功效。
请参阅图1至图4。须知,本说明书所附图式所绘示的结构、比例、大小等,均仅用以配合说明书所揭示的内容,以供熟悉此技术的人士了解与阅读,并非用以限定本发明可实施的限定条件,故不具技术上的实质意义,任何结构的修饰、比例关系的改变或大小的调整,在不影响本发明所能产生的功效及所能达成的目的下,均应仍落在本发明所揭示的技术内容得能涵盖的范围内。同时,本说明书中所引用的如“上”、“下”、“左”、“右”、“中间”及“一”等的用语,亦仅为便于叙述的明了,而非用以限定本发明可实施的范围,其相对关系的改变或调整,在无实质变更技术内容下,当亦视为本发明可实施的范畴。
本申请中申请人为了解决现有技术中微纳尺度打印分辨率低、可打印材料种类少以及难以打印金属材料等难题,提供一种微纳结构的增材制造方法,在实际制造时也可以基于这一增材制造方法原理设计成打印机,其能够实现对所有可在气体中形成带电分散相的材料进行微纳增材制造,通过调控电场的分布和强度、基底的运动,控制打印结构的形状和尺寸,实现多材料、平行模式、大面积微纳结构的快速打印。
本申请人首先提供一种微纳结构的增材制造方法,基于电场作用操控气体中带电分散相的定向迁移,使所述带电分散相在基底上堆垛形成所需的微纳结构。
本申请中的上述所述的增材制造方法是利用空间电场牵引带电分散相的定向迁移进行打印,可以在常温常压下进行,不引入任何其他杂质,所得到的结构均匀性和纯度高。
本发明所涉及的气体,实质上是以气态为连续相,固态和/或液态为分散相的多相流体。本申请中,所述带电分散相是指气体中分散着的带电的液态和/或固态物质。在一个优选的实施方式中,所述带电分散相的尺寸为0.1nm~10μm。在所述电场强度的环境中将沿电场线路径定向迁移,确保了打印的有效可控;微纳尺度的分散相的电荷分布较均匀,其迁移路径统一确保了打印的高精度。
在一个优选的方式中,所述带电分散相的材料选自无机材料、有机材料和复合材料中的一种或多种。更优选地,所述无机材料为金属材料,如金属单质或合金。更优选地,所述有机材料为高分子材料,也可以是生物分子材料等。
在一个具体的实施方式中,所述材料为具有导电或半导电性质时,如为金属材料或者半导体材料,所述带电分散相是采用放电等离子体方法制得。优选地,所述金属材料为单质或合金,所述金属材料中的金属元素选自镁、铝、钛、钒、铬、锰、铁、钴、镍、铜、锌、镓、锗、钇、锆、铌、钼、锝、钌、铑、钯、银、镉、铟、锡、锑、铪、钽、钨、铼、铱、铂、金、铅、铋中的一种或多种。优选地,所述导电材料还包括非金属元素,所述非金属元素选自硼、碳、硅和砷中的一种或多种。所述非金属元素可以是单质也可以是与所述金属元素形成化合物。在一个优选的实施方式中,所述载气为氮气、惰性气体、氧气、氢气和氯气中的一种或多种。
在另一个具体的实施方式中,所述分散相的材料为溶液时,需采用气雾化法或电喷雾等手段使其成为气态分散相,最终形成可利用本申请中上述增材制造方法打印的带电分散相。此时材料可以为无机材料、有机材料或复合材料。
在一个优选的实施方式中,所述基底上罩设有镂空图案层,所述带电分散相在迁移过程中穿过所述镂空图案中的孔道迁移至基底上。本申请中镂空图案层上的孔道可以是连续的,也可以是分散的。优选地,所述镂空图案层中孔道的尺寸在微纳范围,孔道形状不受限制,可规则或不规则。优选的,镂空图案层下表面与基底可接触,也可分开一定距离(0~100μm)。
在一个优选的实施方式中,所述电场作用的强度为1~10000V/cm或-10000~-1V/cm。
通过外加电场和镂空图案层表面所形成的局部电场以及两者的对抗平衡作用,进而构造打印所需的空间电场,使电场线聚束于镂空图案层孔道的中心区域,其收束的尺寸远小于孔道尺寸,收束后的尺寸在亚纳米到微米的范围,聚束区域电场强度提升约2个数量级,可诱导带电分散相的注入并加速其定向迁移。电场线的收束效果与外电场强度相关,当外电场强度较小时,电场线收束能力变强,导致打印精度提高,但由此导致的分散相所受的牵引力减弱,使得打印速度变慢;另外,当外电场强度继续减小到临界强度以下,电场线收束则无法完成,致使打印失败;若外电场较大,电场线则难以收束,不能完成高精度打印,若电场强度继续增大并超过上限,则面临在气相中被击穿的问题,破坏整个打印。
对于所述镂空图案层,其材料可为电介质,如氮化硅、氧化硅或光刻胶;也可为导电层,如金属材料等。在一个优选的实施方式中,所述镂空图案层为导电层,将涂覆导电膜层的镂空图案层镶嵌于绝缘体中,使其表面积累电荷,从而提高电场线收束能力,并同时实现快速打印。另外,优选地,也可将导电膜层连接电源,控制电势差来进一步调控空间电场,比如收束能力、强度和三维特性等。
在一个优选的实施方式中,通过调控空间电场的分布和强度、基底的运动,控制打印结构的形状和尺寸。通过电场来控制带电分散相的打印分辨率。通过基底的运动来改变收束电场线的三维形状,从而精确布设带电分散相的迁移路径,实现复杂三维结构的打印;若加快基底的运动速度,收束电场线的形状则不再改变,带电分散相将沿该收束后的固定通道完成精确位点的打印,打印形状由基底的运动模式决定,由此可通过编程化控制基底运动从而打印复杂的二维或三维结构。
在一个优选的实施方式中,所述气体的使用量为0.1~100L/min。
在一个优选的实施方式中,所述电场作用使得所述带电分散相产生三维定向迁移。
本申请中所述的打印方法可以在封闭空间中,也可以在开放空间中进行,为了防止外界环境的干扰以及制备的安全性考虑,所述打印方法在封闭空间中进行。
在本申请的一个具体的实施方式中,所述基底连接外部电路,并控制打印结构中的电荷分布。另外,通过以不同模式移动基底,可以改变收束的电场线的三维形状,进而改变带电分散相的迁移路线,实现对各种所需结构的打印,可打印出从1nm到10μm的微纳结构产品;若加快基底移动速度,收束的电场线形状不变,但可通过与基底移动来诱导带电分散相的精确位点的打印。
在一个优选的实施方式中,带电分散相可以通过载气辅助将其传输至空间电场作用范围内,以构造的空间电场将其迁移至基底上并按照预设方式堆垛形成特定的微纳结构。所述载气为氮气、惰性气体、氧气、氢气或氯气中的一种或多种。
本申请中申请人基于上述微纳结构的增材制造方法形成了一种具体的微纳尺度产品的打印机,其至少包含带电分散相的形成系统和打印系统,本发明中的打印机不限制该法民方法的使用范围,其他任何打印机含有颗粒源系统制造的带电分散相及其在空间电场作用下定向迁移的增材制造方法皆属不费劳动力的工作。
在一个优选的实施方式中,通过放电等离子体技术制备带电分散相的颗粒源,采用外加电场和镂空图案层表面所形成的局部电场两者的对抗平衡作用,进而构造打印所需的空间电场。
图1为基于本发明上述所述的增材制造方法的机理形成的3D打印机的原理示意图。
图2、图3和图4显示为采用上述所述的增材制造方法所打印的微纳结构产品的SEM图。具体的制备步骤及各步骤的参数具体如下。
实施例1~3中的硅片连接-2KV的电压,持续通入5L/min的氩气,其纯度为99.999%。利用放电等离子体技术制备带电分散相的纳米颗粒,所采用的圆柱电极为99.999%纯度的Ag或Cu,击穿电压约为1.5KV,打印如图3所示的微纳结构数约7000个,打印时间仅需1.5h。
实施例1
在硅片上制备具有镂空图案阵列的电介质层。
实施例1是在硅片上旋涂一层约500nm厚的S1805光刻胶,再通过光刻形成直径为2μm和中心距为6μm的阵列圆孔,通过本发明中的增材制造方法打印如图2所示的阵列结构。
实施例2
在硅片上制备具有镂空图案阵列的电介质层。实施例2中的另一硅片涂覆一层约100nm厚的950PMMA A3光刻胶,通过电子束曝光得到直径为300nm和中心距为600nm的圆孔阵列,通过本发明中的增材制造方法打印如图3所示的阵列结构。
实施例3
在硅片上制备具有镂空图案阵列的电介质层。实施例3中利用光刻与深硅刻蚀手段制备涂覆氮化硅膜层的悬浮镂空图案层,通过本发明中的增材制造方法打印如图4所示的阵列结构。
综上所述,本发明能够实现低成本、高效、超高分辨率(0.1nm~1μm)的三维结构打印,可解决微纳尺度增材制造分辨率低、可打印材料种类少以及难以打印金属材料等难题。
所以,本发明有效克服了现有技术中的种种缺点而具高度产业利用价值。
上述实施例仅例示性说明本发明的原理及其功效,而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下,对上述实施例进行修饰或改变。因此,举凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或改变,仍应由本发明的权利要求所涵盖。
Claims (10)
1.微纳结构的增材制造方法,其特征在于,基于电场作用操控气体中带电分散相的定向迁移,使所述带电分散相在基底上堆垛形成所需的微纳结构。
2.根据权利要求1所述的方法,其特征在于,所述带电分散相的尺寸为0.1nm~10μm。
3.根据权利要求1所述的方法,其特征在于,所述带电分散相的材料选自无机材料、有机材料和复合材料中的一种或多种。
4.根据权利要求1所述的方法,其特征在于,所述基底上罩设有镂空图案层,所述带电分散相在迁移过程中穿过所述镂空图案层中的孔道迁移至基底上。
5.根据权利要求1所述的方法,其特征在于,所述电场作用的强度为1~10000V/cm或-10000~-1V/cm。
6.根据权利要求1所述的方法,其特征在于,通过控制电场的分布和强度、基底的运动,控制打印的形状和尺寸。
7.根据权利要求1所述的方法,其特征在于,所述气体的使用量为0.1~100L/min。
8.根据权利要求1所述的方法,其特征在于,所述电场作用使得所述气体中的带电分散相产生定向迁移。
9.根据权利要求1所述的方法,其特征在于,所述基底连接外部电路。
10.根据权利要求1所述的方法,其特征在于,所述带电分散相通过放电等离子体技术、气雾化法或者电喷雾手段制备。
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