CN113471375A - Mask, display panel and display device - Google Patents

Mask, display panel and display device Download PDF

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Publication number
CN113471375A
CN113471375A CN202110722318.0A CN202110722318A CN113471375A CN 113471375 A CN113471375 A CN 113471375A CN 202110722318 A CN202110722318 A CN 202110722318A CN 113471375 A CN113471375 A CN 113471375A
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CN
China
Prior art keywords
layer
opening
mask
area
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110722318.0A
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Chinese (zh)
Inventor
张微
于池
石博
周瑞
黄炜赟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Chengdu BOE Optoelectronics Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd, Chengdu BOE Optoelectronics Technology Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to CN202110722318.0A priority Critical patent/CN113471375A/en
Publication of CN113471375A publication Critical patent/CN113471375A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/621—Providing a shape to conductive layers, e.g. patterning or selective deposition

Abstract

The application discloses mask version, display panel and display device, this mask version includes: the pattern layer is laid on the supporting layer, at least one first opening is formed in the pattern layer, the first opening corresponds to the light identification area in the substrate, and the cathode selection layer is used for reducing deposition of a cathode layer of the light identification area. This application embodiment is through forming at least one opening on the pattern layer on the mask, and then when utilizing this mask to form the pixel layer on the display panel, make the opening on the mask correspond with the light identification module position in the display panel, with form the CPM layer in this position, thereby can make when forming the cathode layer, because the selectivity of CPM layer to the cathode layer, make the cathode layer less cover the light identification region, the luminousness of light in the comprehensive display screen has been improved, the recognition accuracy has been ensured, user experience has been promoted.

Description

Mask, display panel and display device
Technical Field
The invention relates to the technical field of display, in particular to a mask, a display panel and display equipment.
Background
With the development of display technology and the improvement of user requirements, the application requirements of the overall display device are higher and higher. In addition, in order to improve convenience and security of the display device, an authentication method using Face ID, which is a Face-brushing authentication method, has been developed.
In order to realize full-screen display, it is necessary to move the infrared light wave emission and response Sensor of Face ID inside the display panel, and thus it is necessary to have a high transmittance for infrared light waves.
For the OLED screen, the cathode of the OLED screen has a great influence on the infrared light wave transmittance, so that the Face ID identification accuracy is limited, and the use of the OLED screen by a user is affected.
Disclosure of Invention
In view of the above-mentioned drawbacks and deficiencies of the prior art, it is desirable to provide a mask and a display panel, which form a recognition area with high transmittance to light waves by forming a cathode selection material layer to reduce the adhesion of a cathode layer by forming openings corresponding to the positions of the light recognition areas on at least a pattern layer of the mask.
In a first aspect, an embodiment of the present application provides a mask, including: .
The pattern layer is laid on the supporting layer and used for forming a pixel layer on the substrate, at least one first opening is formed in the pattern layer and corresponds to the light recognition area in the substrate, the first opening is used for forming a cathode selection layer covering the light recognition area on the substrate, and the cathode selection layer is used for reducing deposition of a cathode layer on the light recognition area.
In some embodiments of the first aspect, a projection of the first opening onto the substrate is larger than the photo-identification area, and a defined ring is formed inside the first opening, a projection of an inner edge of the defined ring coinciding with an edge of the photo-identification area.
In some embodiments of the first aspect, a second opening is provided in the support layer at a location corresponding to the location of the first opening.
In some embodiments of the first aspect, an edge of the second opening is located within a projected area of the defined ring.
In some embodiments of the first aspect, the first opening has an area greater than an area of the second opening.
In some embodiments of the first aspect, the first opening has an area that is smaller than an area of the second opening.
In some embodiments of the first aspect, the support layer is provided as a solid film layer.
In some embodiments of the first aspect, the support layer is provided as a half-etched structure.
In a second aspect, embodiments of the present application provide a display panel, in which a pixel layer and a cathode selection layer are formed by using the mask as described in the first aspect, a photo recognition device is disposed in the display panel, and the cathode selection layer covers the photo recognition device.
In a third aspect, embodiments of the present application provide a display device, including the display panel according to the second aspect.
To sum up, the mask that this application embodiment provided, display panel and display device, through forming at least one opening on the pattern layer on at least the mask, and then when utilizing this mask to form the pixel layer on the display panel, make opening on the mask correspond with the infrared identification module position in the display panel, with form the CPM layer in this position, thereby can make when forming the cathode layer, because the selectivity of CPM layer to the cathode layer, make the less deposit of cathode layer on the CPM layer that the light identification region corresponds, the luminousness of light in the comprehensive display screen has been improved, the recognition accuracy has been ensured, user experience has been promoted.
Drawings
Other features, objects and advantages of the present application will become more apparent upon reading of the following detailed description of non-limiting embodiments thereof, made with reference to the accompanying drawings in which:
fig. 1 is a schematic structural diagram of a mask provided in an embodiment of the present application;
fig. 2 is a schematic structural diagram of a display panel according to an embodiment of the present disclosure;
FIG. 3 is a schematic diagram of a reticle structure provided in some embodiments of the present application;
FIG. 4 is a schematic structural diagram of a reticle provided in some embodiments of the present application;
fig. 5 is a schematic structural diagram of a display panel according to some embodiments of the present application;
FIG. 6 is a schematic diagram of a reticle structure provided in some embodiments of the present application;
fig. 7 is a schematic structural diagram of a display panel according to some embodiments of the present application;
FIG. 8 is a schematic structural diagram of a reticle provided in some embodiments of the present application;
fig. 9 is a schematic structural diagram of a display panel according to some embodiments of the present application.
Description of reference numerals:
1-a pattern layer, 2-a support layer, 3-a first opening, 4-a light recognition area, 5-a display screen, 6-a positioning ring, and 7-a second opening.
Detailed Description
The present application will be described in further detail with reference to the following drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the relevant invention and not restrictive of the invention. It should be noted that, for convenience of description, only the portions related to the present invention are shown in the drawings.
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The present application will be described in detail below with reference to the embodiments with reference to the attached drawings.
It can be appreciated that with the continuous development of display technologies, the full screen of the device is required on the premise of convenient and safe identification of the user.
For the Face ID identification technology, the detection and identification of human Face features need to be realized by transmitting and receiving infrared light, that is, by arranging an infrared light transmitting module and an infrared light receiving module on a display panel. Alternatively, in other applications, light needs to be received and transmitted, such as image capture, and visible light needs to be recognized. In addition, with the development of display technology, full-screen display is more and more widely used in order to reduce the size of the device and increase the display area.
It can be understood that in the full-screen technology, the infrared receiving module and the transmitting module in the Face ID identification technology, or the transmitting module and the receiving module of light in other application scenarios, such as the transmission and reception of visible light, will be covered in the cathode layer of the display panel. The transmittance of the cathode layer to light waves is very low, for example, for infrared light, it is usually less than 40%, so that the recognition accuracy is limited in the full-face screen, and the development of the full-face screen is limited.
It can be understood that the Cathode selective Material (CPM) is a Material that is selectively deposited only on the Cathode Material, and the Cathode is difficult to attach to the place where the CPM Material is located, so that the purpose of reducing the attachment of the Cathode can be achieved, the infrared transmittance can be improved in the scene of a full screen, and the light recognition accuracy of the light recognition area can be finally improved.
It is also understood that in forming a display panel, a Fine Metal MASK (FMM) is generally used when forming a pixel layer on a substrate, and in order to increase the stability of the FMM, the FMM may be laid on a support layer, i.e., a F-MASK, which is generally provided as a rectangular mesh structure.
In the embodiment of the application, in order to realize full-screen display on the basis of ensuring the identification precision of the light identification region, in consideration of the special performance of CPM (cathode Patterning material) to cathode material selection, the CPM material layer is deposited in advance in the region where the light receiving module and the light emitting module are required to be arranged, namely the light identification region, through the mask, so that when a cathode layer is formed subsequently, the cathode is rarely attached to the identification region due to the selective deposition performance of the CPM to the cathode material, and the identification precision of the light identification region is ensured on the basis of realizing full-screen display.
For better understanding and description of the mask and the display panel provided in the embodiments of the present application, the following is detailed with reference to fig. 1 to 9.
Fig. 1 is a schematic structural diagram of a mask provided in an embodiment of the present application, and as shown in fig. 1, the mask specifically includes:
the pattern layer 1 and the supporting layer 2, the pattern layer is laid on the supporting layer, the pattern layer is used for forming the pixel layer on the substrate, at least one first opening 3 is arranged on the pattern layer, the first opening corresponds to 4 of the light identification area in the substrate, the first opening is used for forming the cathode selection layer covering the light identification area on the substrate, and the cathode selection layer is used for reducing the deposition of the upper cathode layer of the light identification area.
Specifically, as shown in fig. 1 and 2, the mask provided by the embodiment of the present invention may include a two-layer structure, i.e., a supporting layer for supporting, and a pattern layer, i.e., a Fine Metal Mask (FMM), laid on the supporting layer. At least an opening may be formed in the pattern layer in order to realize a full-screen display and ensure recognition accuracy of light in the light recognition area. When the mask sheet is fixed on the substrate, the opening corresponds to the light identification area of the display panel, namely the corresponding positions of the light receiving module and the light emitting module arranged on the substrate, so as to form a deposition area of the CPM on the substrate.
It can be understood that, in the process of manufacturing the display panel, the CPM layer may be deposited on the light identification region by using the opening, so that when the cathode layer is formed, due to the presence of the CPM material layer in the identification region, the cathode in the identification region is difficult to attach, and thus, in a full-screen display scene, the identification module in the light identification region is not shielded by the cathode layer as much as possible, and the identification accuracy of the light identification region is ensured.
Optionally, in other embodiments of the present application, in order to further improve the etching accuracy and reduce the process difficulty, a larger first opening is formed on the pattern layer of the mask at a position corresponding to the light identification region of the light identification region, that is, the opening is completely covered and greater than the accuracy of the light identification region, and a definition ring 6 may be disposed at an edge of the opening.
For example, as shown in fig. 3, a larger first opening covering the entire photo recognition region may be formed on the pattern layer of the mask so that the area of the first opening is larger than that of the photo recognition region, and the positioning ring may be formed at a position corresponding to the edge of the photo recognition region by an etching process while the larger opening is formed.
Optionally, in some embodiments of the application, in order to improve the identification accuracy and reduce the process difficulty, on the basis of forming the opening on the pattern layer, the supporting layer may be further etched to form an opening, that is, the second opening 7, at the same position on the supporting layer.
It will be appreciated that in a typical FMM, the pattern layer is typically provided as a thin layer structure, while the bottom support layer is provided as a thicker support frame. When the openings are formed on the mask by etching, the difficulty level of the accuracy of the openings formed by etching is different due to the difference of the layer thickness.
For example, since the pattern layer is a thin film layer, the accuracy of the formed opening is generally high, and the error can be controlled to about 10 μm. The etching precision of the supporting layer is poorer than that of the pattern layer, and the supporting layer can be controlled to be about 100 micrometers.
In some embodiments of the present application, according to a specific use scenario, for example, the size of the light recognition area in the display screen, i.e., the precision requirement for the deposition area corresponding to the light recognition area of the light recognition area, is different, when the openings are disposed on the pattern layer, or simultaneously on the support layer, the opening boundary, i.e., the boundary of the area where the CPM is deposited, is defined by exposing the FMM or F-Mask at the opening edge, i.e., the recognition area edge, i.e., the boundary of the area where the CPM is deposited, i.e., different process precision is satisfied.
It can be understood that if the boundaries of the light recognition regions are defined by exposing the FMM at the edges of the opening, the corresponding accuracy is higher, i.e. for scenarios with higher accuracy requirements, the FMM needs to be exposed to improve the accuracy of the boundaries of the opening. Conversely, the opening boundary can be defined by exposing the F-Mask at the opening edge to reduce the process difficulty.
For example, in some embodiments, in a scene where the light recognition area of the light recognition area is large, the boundary of the opening thereof, i.e., the boundary of the area where the CPM is deposited, may be defined by exposing the F-Mask.
Specifically, while a first opening is formed in a position corresponding to a light recognition area of the pattern layer, a second opening may be formed in the support layer at the same position, and in order to reduce the process difficulty, a diameter of the first opening in the pattern layer may be larger than a diameter of the second opening in the support layer, so that the support layer is exposed at a boundary of the light recognition area, that is, the light recognition area of the light recognition area is defined by the opening in the support layer.
As shown in fig. 4 and 5, the peripheral lines indicate first open regions on the pattern layer, and the inner lines indicate second open regions on the support layer.
For another example, in other embodiments, in order to improve the recognition accuracy of the light recognition region, for example, in a scene where the light recognition region of the light recognition region is small, the definition of the CPM deposition boundary may be performed by exposing the FMM.
Specifically, a first opening is formed in a position corresponding to the light recognition area of the pattern layer, and a second opening is formed in the support layer at the same position. Also, in order to improve process accuracy, a first opening diameter on the pattern layer may be made smaller than a second opening diameter on the support layer, so that the pattern layer is exposed at a boundary of the photo-recognition area, i.e., the photo-recognition area is defined by the first opening of the pattern layer.
As shown in fig. 6 and 7, the peripheral lines indicate open areas on the support layer, and the inner lines indicate open areas on the pattern layer.
Alternatively, for the embodiment shown in fig. 3, i.e. forming the definition ring on the pattern layer, similarly, in order to ensure the process accuracy, as shown in fig. 8 and 9, the second opening may be formed on the support layer. Also, the edge of the second opening of the support layer may be positioned within the projection area defining the ring, i.e., the edge of the pattern layer is exposed to the light recognition area to define the light recognition area by the pattern layer.
Optionally, in some embodiments of the present application, the support layer may be provided as a solid film layer in order to improve stability of the pattern layer.
It is understood that after the supporting layer is configured as a solid film layer, through holes corresponding to the pattern layer, such as openings corresponding to the pixel sub-units, are correspondingly formed thereon.
Further, in other embodiments of the present application, in order to reduce the overall quality of the mask and avoid wrinkles of the mask caused by the web stretching, after the support layer is used as the solid film layer, the solid film layer may be half-etched.
For example, half-etching may be performed on the support layer on the back side of the entire reticle to form etching features that reduce the weight.
Optionally, the opening in the embodiment of the present application may be configured to be a circular structure or a square structure, which is not limited in the embodiment of the present application.
It can be understood that, in the embodiment of the present application, the infrared receiving module and the infrared transmitting module of the Face ID in the full-Face display screen are disposed at different positions of the display panel, and accordingly, two openings are formed on the mask. In other embodiments, the infrared receiving module and the infrared transmitting module may be integrated in the same region, and correspondingly, an opening may be formed in the region of the mask corresponding to the infrared receiving module and the infrared transmitting module.
It can be further understood that, in practice, the number and the shape of the openings formed on the mask may be determined according to a practical scenario, which is not limited in the embodiment of the present application.
On the other hand, the embodiment of the application further provides a display panel, wherein the Face ID identification module is arranged on the display panel, and the display panel forms a pattern layer through the mask provided by the embodiment. That is, the pixel layer is formed by the mask provided in the above embodiment, and the CPM layer is formed at the position of the photo-recognition region, so that less cathode is not attached to the photo-recognition region.
On the other hand, embodiments of the present application further provide a display device, which includes the display panel of the above embodiments.
To sum up, the mask that this application embodiment provided, display panel and display device, through the pattern layer on the mask, or still include and form at least one opening on the supporting layer, and then when utilizing this eye mask to form the pixel layer on the display panel, make opening on the mask correspond with the light recognition area in the display panel, in order to form the CPM layer in this position, thereby can make when forming the cathode layer, because the selectivity of CPM layer to the cathode layer, make the cathode layer hardly cover the light recognition area, the luminousness of the light in the comprehensive display screen has been improved, the regional recognition accuracy of light recognition has been ensured, user experience has been promoted.
The above description is only a preferred embodiment of the application and is illustrative of the principles of the technology employed. It will be appreciated by a person skilled in the art that the scope of the invention as referred to in the present application is not limited to the embodiments with a specific combination of the above-mentioned features, but also covers other embodiments with any combination of the above-mentioned features or their equivalents without departing from the inventive concept. For example, the above features may be replaced with (but not limited to) features having similar functions disclosed in the present application.

Claims (10)

1. A reticle, comprising:
the pattern layer is laid on the supporting layer and used for forming a pixel layer on a substrate, at least one first opening is formed in the pattern layer and corresponds to a light recognition area in the substrate, a cathode selection layer covering the light recognition area is formed on the substrate through the first opening, and the cathode selection layer is used for reducing deposition of a cathode layer on the light recognition area.
2. The reticle of claim 1, wherein a projection of the first opening on the substrate is larger than the photo-identification area and a defined ring is formed inside the first opening, a projection of an inner edge of the defined ring coinciding with an edge of the photo-identification area.
3. The mask according to claim 2, wherein a second opening is formed in the support layer at a position corresponding to the first opening.
4. The reticle of claim 3, wherein an edge of the second opening is located within a projected area of the defined ring.
5. The reticle of claim 3, wherein an area of the first opening is larger than an area of the second opening.
6. The reticle of claim 3, wherein an area of the first opening is smaller than an area of the second opening.
7. The reticle of any one of claims 3-6, wherein the support layer is provided as a solid film layer.
8. The reticle of claim 7, wherein the support layer is configured as a half-scribe structure.
9. A display panel, wherein the pixel layer and the cathode selective material in the display panel are formed by the mask according to any one of claims 1 to 8, the display panel is provided with a light recognition device, and the cathode selective material layer covers the light recognition device.
10. A display device characterized by comprising the display panel according to claim 9.
CN202110722318.0A 2021-06-28 2021-06-28 Mask, display panel and display device Pending CN113471375A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110722318.0A CN113471375A (en) 2021-06-28 2021-06-28 Mask, display panel and display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110722318.0A CN113471375A (en) 2021-06-28 2021-06-28 Mask, display panel and display device

Publications (1)

Publication Number Publication Date
CN113471375A true CN113471375A (en) 2021-10-01

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110722318.0A Pending CN113471375A (en) 2021-06-28 2021-06-28 Mask, display panel and display device

Country Status (1)

Country Link
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114497415A (en) * 2022-01-24 2022-05-13 京东方科技集团股份有限公司 Display panel, manufacturing method thereof and display device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114497415A (en) * 2022-01-24 2022-05-13 京东方科技集团股份有限公司 Display panel, manufacturing method thereof and display device
CN114497415B (en) * 2022-01-24 2024-03-19 京东方科技集团股份有限公司 Display panel, manufacturing method thereof and display device

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