CN113471299A - Thin film transistor and preparation method thereof - Google Patents
Thin film transistor and preparation method thereof Download PDFInfo
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- CN113471299A CN113471299A CN202110849437.2A CN202110849437A CN113471299A CN 113471299 A CN113471299 A CN 113471299A CN 202110849437 A CN202110849437 A CN 202110849437A CN 113471299 A CN113471299 A CN 113471299A
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- 239000010409 thin film Substances 0.000 title claims abstract description 55
- 238000002360 preparation method Methods 0.000 title description 13
- 229910003437 indium oxide Inorganic materials 0.000 claims abstract description 82
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 82
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 56
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 56
- 239000010936 titanium Substances 0.000 claims abstract description 39
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000001301 oxygen Substances 0.000 claims abstract description 38
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000002243 precursor Substances 0.000 claims description 85
- 239000012071 phase Substances 0.000 claims description 73
- 238000006243 chemical reaction Methods 0.000 claims description 52
- 229910052738 indium Inorganic materials 0.000 claims description 33
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 33
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 31
- 229910052719 titanium Inorganic materials 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 29
- 238000001179 sorption measurement Methods 0.000 claims description 27
- 239000000126 substance Substances 0.000 claims description 26
- 239000007789 gas Substances 0.000 claims description 20
- 239000010408 film Substances 0.000 claims description 19
- 238000006073 displacement reaction Methods 0.000 claims description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 12
- 239000012808 vapor phase Substances 0.000 claims description 12
- 238000000231 atomic layer deposition Methods 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 8
- MNWRORMXBIWXCI-UHFFFAOYSA-N tetrakis(dimethylamido)titanium Chemical compound CN(C)[Ti](N(C)C)(N(C)C)N(C)C MNWRORMXBIWXCI-UHFFFAOYSA-N 0.000 claims description 7
- SZEJQLSRYARYHS-UHFFFAOYSA-N dimethylindium Chemical compound C[In]C SZEJQLSRYARYHS-UHFFFAOYSA-N 0.000 claims description 6
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 6
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 abstract description 9
- 239000000969 carrier Substances 0.000 abstract description 5
- 230000001276 controlling effect Effects 0.000 abstract description 5
- 230000007547 defect Effects 0.000 abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 34
- 238000010926 purge Methods 0.000 description 25
- 229910052757 nitrogen Inorganic materials 0.000 description 17
- 239000008367 deionised water Substances 0.000 description 7
- 229910021641 deionized water Inorganic materials 0.000 description 7
- 239000006227 byproduct Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000006467 substitution reaction Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000001035 drying Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- -1 (dimethyl) propyl Chemical group 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000010981 drying operation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
Abstract
The invention provides a thin film transistor, which comprises a grid, an insulating layer and an active layer, wherein the grid, the insulating layer and the active layer are arranged in sequence from bottom to top; an active layer is arranged on the substrate; the active layer comprises indium oxide layers and titanium oxide layers which are sequentially and alternately stacked and arranged on the surface of the insulating layer. The invention arranges the active layer as an indium oxide layer and a titanium oxide layer which are alternately stacked and arranged, and Ti4+Introduced into the active layer, using Ti4+And O2‑The strong binding energy inhibits oxygen defects in the thin film transistor, thereby effectively regulating and controlling the concentration of active layer carriers and further improving the current switching ratio of the thin film transistor. The results of the examples show that the thin film transistor provided by the invention has good electrical performance and the current on-off ratio is not less than 105The sub-threshold swing is 0.58-0.68V/dec, and the low-threshold voltage isThe pressure is 0.52-1.06V.
Description
Technical Field
The invention relates to the technical field of transistors, in particular to a thin film transistor and a preparation method thereof.
Background
With the progress of display technology and the development of portable mobile devices, thin film transistors play an important role in active matrix driving display devices. The thin film transistor belongs to one of the types of field effect transistors, is of a bottom gate top contact structure and sequentially comprises a source drain electrode, an active layer, an insulating layer and a grid electrode from top to bottom, wherein the property of the active layer has a significant influence on the overall performance of the device.
As an active layer material of a thin film transistor, a metal oxide semiconductor has been studied, and a common metal oxide semiconductor is mainly indium oxide (In)2O3) TFTs (e.g., InGaZnO) using indium oxide as a main semiconductor material are widely used in the field of flat panel displays because of their advantages such as high mobility, high visible light transparency, and low threshold voltage. However, the carrier concentration of intrinsic indium oxide is too high, which may cause the off-state current of the thin film transistor to increase, so that the current switching ratio is reduced, and the device cannot show obvious TFT characteristics.
Therefore, how to increase the current switching ratio of the indium oxide-based thin film transistor becomes a difficult problem to be solved urgently.
Disclosure of Invention
The invention aims to provide a thin film transistor and a preparation method thereof. The thin film transistor provided by the invention has good electrical property and high on-off ratio.
In order to achieve the above purpose, the invention provides the following technical scheme:
the invention provides a thin film transistor, which comprises a grid, an insulating layer and an active layer, wherein the grid, the insulating layer and the active layer are arranged in sequence from bottom to top; an active layer is arranged on the substrate;
the active layer comprises indium oxide layers and titanium oxide layers which are sequentially and alternately stacked and arranged on the surface of the insulating layer.
Preferably, the number of alternation times of the indium oxide layer and the titanium oxide layer in the active layer is 15-30.
Preferably, the thickness ratio of the single indium oxide layer to the single titanium oxide layer in the active layer is (10-15): 1; the thickness of each indium oxide layer in the active layer is the same, and the thickness of each titanium oxide layer is the same.
Preferably, the thickness ratio of the indium oxide layer to the titanium oxide layer in each alternating period in the active layer, which are alternately stacked and arranged, is (10-15): 1.
preferably, the thickness of the active layer is 10-80 nm.
The invention also provides a preparation method of the thin film transistor in the technical scheme, which comprises the following steps:
preparing a grid electrode on a substrate;
preparing an insulating layer on the grid electrode;
alternately preparing an indium oxide layer and a titanium oxide layer on the insulating layer by adopting an atomic layer deposition technology to obtain an active layer;
and preparing a source electrode and a drain electrode on the active layer.
Preferably, the method for preparing the indium oxide layer comprises the following steps:
(1) placing the insulating layer in an indium gas-phase precursor, and carrying out chemical adsorption to obtain an insulating layer with the surface adsorbed with the indium gas-phase precursor; the gas-phase precursor of the indium comprises dimethyl indium and/or trimethyl indium;
(2) placing the insulating layer with the surface adsorbed with the gas-phase precursor of indium obtained in the step (1) in a gas-phase precursor of oxygen, and performing a displacement reaction to obtain an atomic film; the gas phase precursor of oxygen comprises water vapor and/or ozone;
(3) and (3) carrying out layer-by-layer deposition on the atomic film obtained in the step (2) according to the methods of the steps (1) and (2) to obtain an indium oxide layer.
Preferably, the time of the chemical adsorption in the step (1) is 50-1000 ms.
Preferably, the preparation method of the titanium oxide layer comprises the following steps:
1) placing the indium oxide layer in a titanium gas-phase precursor, and carrying out chemical adsorption to obtain an indium oxide layer of which the surface is adsorbed with the titanium gas-phase precursor; the vapor phase precursor of titanium comprises titanium tetrachloride and/or tetrakis (dimethylamino) titanium;
2) placing the indium oxide layer with the surface adsorbed with the titanium gas-phase precursor obtained in the step 1) in an oxygen gas-phase precursor for a displacement reaction to obtain an atomic film; the gas phase precursor of oxygen comprises water vapor and/or ozone;
3) according to the method of the steps 1) and 2), carrying out layer-by-layer deposition on the atomic film obtained in the step 2) to obtain a titanium oxide layer.
Preferably, the time of the chemical adsorption in the step 1) is 200-800 ms.
Preferably, the time for the displacement reaction in the step 2) is 100-500 ms.
The invention provides a thin film transistor, which comprises a grid, an insulating layer and an active layer, wherein the grid, the insulating layer and the active layer are arranged in sequence from bottom to top; an active layer is arranged on the substrate; the active layer comprises indium oxide layers and titanium oxide layers which are sequentially and alternately stacked and arranged on the surface of the insulating layer. The invention arranges the active layer as an indium oxide layer and a titanium oxide layer which are alternately stacked and arranged, and Ti4+Introduced into the active layer, using Ti4+And O2-The strong binding energy inhibits oxygen defects in the thin film transistor, thereby effectively regulating and controlling the concentration of active layer carriers and further improving the current switching ratio of the thin film transistor. The results of the examples show that the thin film transistor provided by the invention has good electrical performance and the current on-off ratio is not less than 105The subthreshold swing is 0.58-0.68V/dec, and the low threshold voltage is 0.52-1.06V.
Drawings
Fig. 1 is a schematic structural diagram of a thin film transistor provided in the present invention;
FIG. 2 is a graph showing the electrical properties of a thin film transistor prepared in example 2;
fig. 3 is a graph showing the electrical characteristics of the thin film transistor prepared in example 3.
Detailed Description
The invention provides a thin film transistor, which comprises a grid, an insulating layer and an active layer, wherein the grid, the insulating layer and the active layer are arranged in sequence from bottom to top; an active layer is arranged on the substrate;
the active layer comprises indium oxide layers and titanium oxide layers which are sequentially and alternately stacked and arranged on the surface of the insulating layer.
The structure of the thin film transistor provided by the invention is schematically shown in fig. 1.
As shown in fig. 1, the thin film transistor includes a gate electrode. In the invention, the material of the grid preferably comprises heavily doped silicon and/or ITO glass. In the invention, the thickness of the heavily doped silicon is preferably 400-500 μm, and more preferably 450 μm; the thickness of the ITO glass is preferably 1-10 mm, and more preferably 5-7 mm.
As shown in fig. 1, the thin film transistor further includes an insulating layer disposed on the upper surface of the gate electrode.
In the present invention, the material of the insulating layer preferably includes at least one of zirconium oxide, hafnium oxide, aluminum oxide, and yttrium oxide; the thickness of the insulating layer is preferably 40-50 nm, and more preferably 45 nm.
As shown in fig. 1, the thin film transistor further includes an active layer disposed on the upper surface of the insulating layer.
As shown in fig. 1, the active layer includes indium oxide layers and titanium oxide layers alternately stacked in this order on the surface of the insulating layer. The invention arranges the active layer as an indium oxide layer and a titanium oxide layer which are alternately stacked and arranged, and Ti4+Introduced into the active layer, using Ti4+And O2-The strong binding energy inhibits oxygen defects in the thin film transistor, thereby effectively regulating and controlling the concentration of active layer carriers and further improving the current switching ratio of the thin film transistor.
In the invention, the number of alternation times of the indium oxide layer and the titanium oxide layer in the active layer is preferably 15-30, more preferably 17-23, and even more preferably 20. The current switching ratio of the thin film transistor can be further improved by controlling the alternation frequency of the indium oxide layer and the titanium oxide layer in the active layer.
In the invention, the thickness ratio of the single indium oxide layer to the single titanium oxide layer in the active layer is preferably (10-15): 1, more preferably (12-18): 1, more preferably 15: 1; the thickness of each indium oxide layer in the active layer is preferably the same; the thickness of each titanium oxide layer in the active layer is preferably the same. According to the invention, the thickness ratio of the indium oxide layer to the titanium oxide layer in each alternate period is controlled, the thickness of each indium oxide layer is limited to be the same, and the thickness of each titanium oxide layer is the same, so that the content of titanium oxide in the active layer is controlled, the content of titanium in the active layer is regulated and controlled, the concentration of carriers in the active layer is improved, and the current switching ratio and the electrical stability of the thin film transistor are further improved.
In the present invention, the thickness of the active layer is preferably 10 to 80nm, more preferably 20 to 60nm, and still more preferably 21 to 50 nm.
In the present invention, an active electrode and a drain electrode are provided on the active layer. In the present invention, the material of the source electrode and the drain electrode independently preferably includes at least one of aluminum, copper, silver, molybdenum, and indium tin oxide. In the present invention, the thickness of the source electrode and the drain electrode is independently preferably 100 to 300nm, and more preferably 200 nm.
The invention arranges the active layer as an indium oxide layer and a titanium oxide layer which are alternately stacked and arranged, and Ti4+Introduced into the active layer, using Ti4+And O2-The strong binding energy inhibits oxygen defects in the thin film transistor, so that the concentration of active layer carriers is effectively regulated and controlled, the current switching ratio of the thin film transistor is improved, and the problem that the indium oxide thin film transistor cannot be turned off due to high-concentration oxygen vacancies in the device in the prior art is solved.
The thin film transistor provided by the invention has the advantages of low cost, high mobility and high on-off ratio, can be applied to the fields of transistors, CMOS (complementary metal oxide semiconductor), gas sensing, temperature sensing, biomedical sensing, optical regulation and the like, and has wide application prospect.
The invention also provides a preparation method of the thin film transistor in the technical scheme, which comprises the following steps:
preparing a grid electrode on a substrate;
preparing an insulating layer on the grid electrode;
alternately preparing an indium oxide layer and a titanium oxide layer on the insulating layer by adopting an atomic layer deposition technology to obtain an active layer;
and preparing a source electrode and a drain electrode on the active layer.
The invention prepares the grid on the substrate.
In the present invention, the material of the substrate is not particularly limited, and a substrate known to those skilled in the art may be used. The size of the substrate is not specially limited, and the substrate can be adjusted according to actual use requirements.
According to the invention, the substrate is preferably washed and dried in sequence, and then the grid electrode is prepared on the substrate. The washing and drying operations are not particularly limited in the present invention, and washing and drying techniques known to those skilled in the art may be used. The operation of fabricating the gate electrode on the substrate is not particularly limited in the present invention, and a fabrication method known to those skilled in the art may be used.
After the gate is obtained, the invention prepares an insulating layer on the gate.
The operation of forming the insulating layer on the gate electrode is not particularly limited in the present invention, and a forming operation well known to those skilled in the art may be used.
After the insulating layer is obtained, the indium oxide layer and the titanium oxide layer are alternately prepared on the insulating layer by adopting an atomic layer deposition technology, so that the active layer is obtained. The active layer is obtained by adopting the atomic layer deposition technology and depositing layer by layer in an atomic-scale mode, and the thicknesses of the indium oxide layer and the titanium oxide layer in the active layer can be accurately regulated and controlled.
In the invention, the preparation method of the indium oxide layer comprises the following steps:
(1) placing the insulating layer in an indium gas-phase precursor, and carrying out chemical adsorption to obtain an insulating layer with the surface adsorbed with the indium gas-phase precursor; the gas-phase precursor of the indium comprises dimethyl indium and/or trimethyl indium;
(2) placing the insulating layer with the surface adsorbed with the gas-phase precursor of indium obtained in the step (1) in a gas-phase precursor of oxygen, and performing a displacement reaction to obtain an atomic film; the gas phase precursor of oxygen comprises water vapor and/or ozone;
(3) and (3) carrying out layer-by-layer deposition on the atomic film obtained in the step (2) according to the methods of the steps (1) and (2) to obtain an indium oxide layer.
In the invention, the insulating layer is preferably placed in an indium gas-phase precursor and subjected to chemical adsorption to obtain the insulating layer with the indium gas-phase precursor adsorbed on the surface. The invention puts the insulating layer in the indium gas phase precursor, the indium gas phase precursor is absorbed on the surface of the insulating layer due to the chemical absorption effect, and reacts with the active group on the surface of the insulating layer to produce gaseous by-products.
In the present invention, the gas phase precursor of indium preferably comprises dimethyl indium and/or trimethyl indium (TMIn); the dimethyl indium is preferably DADI ((3 (dimethyl) propyl) dimethyl) indium. The sources of the dimethylindium and trimethylindium are not particularly limited in the present invention, and commercially available products known to those skilled in the art may be used. The vapor phase precursor of indium in the present invention is used to provide a source of indium.
In the present invention, the chemisorption is preferably performed in a vacuum reaction chamber; the temperature of the chemical adsorption is preferably 200-300 ℃, and more preferably 230-270 ℃; the vacuum degree of the chemical adsorption is preferably not higher than 7 mbar; the chemical adsorption time is preferably 50-1000 ms, more preferably 100-500 ms, and even more preferably 200-300 ms. The source of the vacuum reaction chamber is not particularly limited in the present invention, and the apparatus well known to those skilled in the art may be used. The time of the chemical adsorption in the invention can realize the saturated adsorption of the indium source on the surface of the insulating layer within the range.
In the present invention, the indium vapor phase precursor is preferably introduced into the vacuum reaction chamber in a pulsed manner; the temperature of the indium gas-phase precursor when the indium gas-phase precursor is introduced into the vacuum reaction cavity is preferably 30-40 ℃, and more preferably 35 ℃. The invention adopts a pulse mode to lead the indium source into the vacuum reaction cavity to realize chemical adsorption.
In the invention, protective gas is preferably introduced into the vacuum reaction chamber before the indium gas-phase precursor is introduced into the vacuum reaction chamber in a pulse mode; the protective gas is preferably nitrogen. The dosage of the introduced protective gas is not specially limited, and the protective gas can be ensured to completely replace the air in the vacuum reaction cavity. The protective gas is introduced into the vacuum reaction cavity in order to completely replace the gas in the vacuum reaction cavity, so that the influence of air on the subsequent chemical adsorption reaction is avoided.
After the chemical adsorption is finished, the invention preferably adopts nitrogen to purge the vacuum reaction cavity to obtain the insulating layer of the gas-phase precursor with indium adsorbed on the surface. The operation of the nitrogen purge in the present invention is not particularly limited, and a nitrogen purge known to those skilled in the art may be used. The nitrogen purging is adopted in the invention to remove redundant gas-phase precursor and gaseous by-product of indium in the vacuum reaction cavity.
After the insulating layer of the gas-phase precursor with indium adsorbed on the surface is obtained, the insulating layer of the gas-phase precursor with indium adsorbed on the surface is preferably placed in a gas-phase precursor of oxygen to carry out a displacement reaction, so as to obtain an indium oxide layer. The method comprises the step of placing the insulating layer with the gas-phase precursor of indium adsorbed on the surface in the gas-phase precursor of oxygen, wherein the gas-phase precursor of oxygen can perform a displacement reaction with the gas-phase precursor of indium on the surface of the insulating layer to obtain the indium oxide layer.
In the present invention, the gas phase precursor of oxygen preferably comprises deionized water and/or ozone. The sources of the deionized water and ozone in the present invention are not particularly limited, and commercially available products known to those skilled in the art may be used. The gas phase precursor of oxygen is used in the present invention to provide a source of oxygen.
In the present invention, the displacement reaction is preferably carried out in a vacuum reaction chamber; the vacuum reaction cavity is preferably the vacuum reaction cavity adopted in the chemical adsorption process; the temperature of the replacement reaction is preferably 200-300 ℃, and more preferably 230-270 ℃; the vacuum degree of the displacement reaction is preferably not higher than 7 mbar; the time of the substitution reaction is preferably 100 to 500ms, and more preferably 200 to 300 ms. The time of the substitution reaction in the present invention is within the above range, and the indium source on the surface of the insulating layer can sufficiently react with the oxygen source to obtain a desired indium oxide layer.
In the present invention, a vapor phase precursor of oxygen is preferably pulsed into a vacuum reaction chamber; the temperature of the oxygen gas-phase precursor when the oxygen gas-phase precursor is introduced into the vacuum reaction chamber is preferably room temperature.
After the displacement reaction is finished, the invention preferably adopts nitrogen to purge the vacuum reaction cavity to obtain the atomic film. The operation of the nitrogen purge in the present invention is not particularly limited, and a nitrogen purge known to those skilled in the art may be used. The invention adopts nitrogen to sweep and can remove the gas-phase precursor and the gaseous by-product of redundant oxygen in the vacuum reaction cavity.
After obtaining the atomic film, the present invention preferably performs layer-by-layer deposition on the atomic film to obtain an indium oxide layer according to the aforementioned operation.
In the present invention, the method for preparing the titanium oxide layer preferably includes the following steps:
1) placing the indium oxide layer in a titanium gas-phase precursor, and carrying out chemical adsorption to obtain an indium oxide layer of which the surface is adsorbed with the titanium gas-phase precursor; the vapor phase precursor of titanium comprises titanium tetrachloride and/or tetrakis (dimethylamino) titanium;
2) placing the indium oxide layer with the surface adsorbed with the titanium gas-phase precursor obtained in the step 1) in an oxygen gas-phase precursor for a displacement reaction to obtain an atomic film; the gas phase precursor of oxygen comprises water vapor and/or ozone;
3) according to the method of the steps 1) and 2), carrying out layer-by-layer deposition on the atomic film obtained in the step 2) to obtain a titanium oxide layer.
The indium oxide layer is preferably placed in a titanium gas-phase precursor and subjected to chemical adsorption to obtain the indium oxide layer with the titanium gas-phase precursor adsorbed on the surface. The indium oxide layer is placed in the titanium gas-phase precursor, and the titanium gas-phase precursor is adsorbed on the surface of the indium oxide layer due to the chemical adsorption effect and reacts with active groups on the surface of the indium oxide layer, so that a gaseous by-product is produced by the reaction.
In the present invention, the vapor phase precursor of titanium preferably includes titanium tetrachloride and/or tetrakis (dimethylamino) titanium. The sources of the titanium tetrachloride and the tetrakis (dimethylamino) titanium are not particularly limited in the present invention, and commercially available products known to those skilled in the art may be used. The vapor phase precursor of titanium in the present invention is used to provide a titanium source.
In the present invention, the chemisorption is preferably performed in a vacuum reaction chamber; the vacuum reaction cavity is preferably a vacuum reaction cavity adopted in the preparation of the indium oxide layer; the temperature of the chemical adsorption is preferably 200-300 ℃, and more preferably 230-270 ℃; the vacuum degree of the chemical adsorption is preferably not higher than 7 mbar; the chemical adsorption time is preferably 200-800 ms, and more preferably 500-600 ms. The chemical adsorption time in the invention can realize the saturated adsorption of the titanium source on the surface of the indium oxide layer within the range.
In the invention, the titanium gas-phase precursor is preferably introduced into the vacuum reaction chamber in a pulse mode; the temperature of the titanium gas-phase precursor when the titanium gas-phase precursor is introduced into the vacuum reaction cavity is preferably 40-50 ℃, and more preferably 45 ℃.
After the chemical adsorption is finished, the invention preferably adopts nitrogen to purge the vacuum reaction cavity to obtain the indium oxide layer of the gas-phase precursor with titanium adsorbed on the surface. The operation of the nitrogen purge in the present invention is not particularly limited, and a nitrogen purge known to those skilled in the art may be used. The nitrogen purging is adopted in the invention to remove the redundant gas-phase precursor and gaseous by-product of the titanium in the vacuum reaction cavity.
After the indium oxide layer of the vapor phase precursor with titanium adsorbed on the surface is obtained, the indium oxide layer of the vapor phase precursor with titanium adsorbed on the surface is preferably placed in a vapor phase precursor of oxygen to carry out a substitution reaction, so as to obtain an atomic film. The indium oxide layer with the surface adsorbed with the titanium gas-phase precursor is placed in the oxygen gas-phase precursor, and the oxygen gas-phase precursor can perform a displacement reaction with the titanium gas-phase precursor on the surface of the indium oxide layer to obtain the titanium oxide layer.
In the present invention, the gas phase precursor of oxygen preferably comprises deionized water and/or ozone. The sources of the deionized water and ozone in the present invention are not particularly limited, and commercially available products known to those skilled in the art may be used. The gas phase precursor of oxygen is used in the present invention to provide a source of oxygen.
In the present invention, the displacement reaction is preferably carried out in a vacuum reaction chamber; the vacuum reaction cavity is preferably a vacuum reaction cavity adopted by the chemical adsorption; the temperature of the replacement reaction is preferably 200-300 ℃, and more preferably 230-270 ℃; the vacuum degree of the displacement reaction is preferably not higher than 7 mbar; the time of the substitution reaction is preferably 100 to 500ms, and more preferably 250 to 300 ms. The time of the substitution reaction in the present invention is within the above range, and the titanium source on the surface of the indium oxide layer can sufficiently react with the oxygen source to obtain the desired titanium oxide layer.
In the present invention, a vapor phase precursor of oxygen is preferably pulsed into a vacuum reaction chamber; the temperature of the gas-phase precursor of oxygen is preferably room temperature.
After the displacement reaction is finished, the invention preferably adopts nitrogen to purge the vacuum reaction cavity to obtain the atomic film. The operation of the nitrogen purge in the present invention is not particularly limited, and a nitrogen purge known to those skilled in the art may be used. The invention adopts nitrogen purging to remove redundant gas-phase precursor of oxygen and gaseous by-products in the vacuum reaction cavity.
After obtaining the atomic film, the present invention preferably performs layer-by-layer deposition on the atomic film to obtain a titanium oxide layer according to the aforementioned operation.
In the present invention, the chemisorption time and the time of the substitution reaction at the time of the preparation of the indium oxide layer and the titanium oxide layer are independently preferably the opening time of the electromagnetic valve. The invention controls the dosage of each gas-phase precursor by controlling the opening time of the electromagnetic valve, which is common knowledge in the field.
The indium oxide layer and the titanium oxide layer are prepared by adopting the atomic layer deposition technology, the thicknesses of the indium oxide layer and the titanium oxide layer in the active layer can be accurately regulated, the controllability and the repeatability of the growth process are good, and the element proportion can be quickly regulated by only regulating the cycle times of the indium oxide layer and the titanium oxide layer in the active layer.
After the active layer is obtained, the invention prepares a source electrode and a drain electrode on the active layer.
The operation of fabricating the source and drain electrodes on the active layer is not particularly limited in the present invention, and may be performed by a fabrication operation well known to those skilled in the art.
The preparation method of the thin film transistor provided by the invention has the advantages of simple process and low cost.
The technical solution of the present invention will be clearly and completely described below with reference to the embodiments of the present invention. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
The thin film transistor of the embodiment comprises a grid electrode, an insulating layer and an active layer which are arranged in sequence from bottom to top; an active layer is arranged on the substrate;
the active layer comprises indium oxide layers and titanium oxide layers which are sequentially and alternately stacked and arranged on the surface of the insulating layer.
Example 2
As shown in fig. 1, the thin film transistor of the present embodiment is composed of a gate electrode, an insulating layer, and an active layer, which are sequentially disposed from bottom to top; an active layer is arranged on the substrate;
the grid electrode is made of heavily doped silicon and has the thickness of 450 mu m;
the insulating layer is made of aluminum oxide and has a thickness of 50 nm;
the active layer consists of indium oxide layers and titanium oxide layers which are sequentially and alternately stacked on the surface of the insulating layer;
wherein, the alternation frequency of the indium oxide layer and the titanium oxide layer in the active layer is 20; the thickness ratio of the single indium oxide layer to the single titanium oxide layer in the active layer is 15: 1; the thickness of each indium oxide layer in the active layer is the same, and the thickness of each titanium oxide layer is the same; the thickness of the active layer is 21 nm;
the source electrode and the drain electrode are both made of aluminum; the thickness is 200 nm;
the preparation method of the thin film transistor comprises the following steps:
(1) cleaning and drying the heavily doped silicon to obtain a grid electrode;
(2) preparing an insulating layer on the grid electrode by adopting an atomic layer deposition method;
the method comprises the following specific steps:
1) placing the grid electrode into a vacuum reaction chamber, vacuumizing to 7mbar by using a mechanical pump, vacuumizing all the time in the whole process by using the mechanical pump, and N2The flow of the inner reaction cavity is controlled by a flow meter to be communicated with the inner reaction cavity and the outer wall of the inner reaction cavity, the flow of the inner reaction cavity is 300sccm, and the flow of the outer wall of the inner reaction cavity is 800 sccm;
2) heating the inner reaction cavity to 200 ℃, opening an electromagnetic valve, introducing TMA200ms, closing the electromagnetic valve, and adopting N2Purge for 5 seconds, then introduce room temperature deionized water for 300ms, then close the solenoid valve, finally N2Purging for 5 seconds, and repeating the step for 500 times to obtain an aluminum oxide insulating layer;
(3) alternately preparing an indium oxide layer and a titanium oxide layer on the insulating layer by adopting an atomic layer deposition technology, and specifically obtaining the active layer comprises the following steps:
1) putting the insulating layer into a vacuum reaction chamber, vacuumizing to 7mbar by using a mechanical pump, vacuumizing all the time in the whole process by using the mechanical pump, and N2The flow of the inner reaction cavity is 300, and the flow of the outer wall of the inner reaction cavity is 800 sccm;
2) heating the inner reaction cavity to 200 ℃, opening an electromagnetic valve, introducing DADI at 35 ℃ for 200ms, closing the electromagnetic valve, and then adopting N2Purging for 5 seconds, then introducing room temperature ozone for 300ms, then closing the electromagnetic valve, and finally N2Purging for 5 seconds, and repeating the step for 15 times to obtain an indium oxide layer;
3) opening an electromagnetic valve, introducing 45 ℃ tetra (dimethylamino) titanium for 500ms, then closing the electromagnetic valve, and adopting N2Purging for 5 seconds, introducing room-temperature deionized water for 250ms, closing the electromagnetic valve, and adopting N2Purging for 5 seconds, and repeating the step for 1 time to obtain a titanium oxide layer;
4) repeating the steps 2) and 3) for 20 times to prepare an active layer;
(4) preparing a source electrode and a drain electrode on the active layer by adopting a thermal evaporation method to obtain a thin film transistor;
the method comprises the following specific steps: channel length by width (1000 μm by 100 μm), defined by stainless steel mask, by mechanical pump and molecularPumping down to 5 x 10-4And Pa, adjusting a power supply heating button to start heating until the aluminum starts to evaporate until the crystal oscillation index reaches the value for preparing 200nm aluminum, and closing the heating button.
The thin film transistor prepared in example 2 was subjected to an electrical property test, and the result is shown in fig. 2.
As can be seen from fig. 2, the thin film transistor of the bottom-gate top-contact structure provided in this embodiment has a switching ratio of 106The subthreshold swing is 0.58V/dec, and the low threshold voltage is 0.52V.
Example 3
As shown in fig. 1, the thin film transistor of the present embodiment is composed of a gate electrode, an insulating layer, and an active layer, which are sequentially disposed from bottom to top; an active layer is arranged on the substrate;
the grid electrode is made of ITO glass and is 7mm thick;
the insulating layer is made of hafnium oxide and has a thickness of 40 nm;
the active layer consists of indium oxide layers and titanium oxide layers which are sequentially and alternately stacked on the surface of the insulating layer;
wherein, the alternation frequency of the indium oxide layer and the titanium oxide layer in the active layer is 30; the thickness ratio of the single indium oxide layer to the single titanium oxide layer in the active layer is 10: 1; the thickness of each indium oxide layer in the active layer is the same, and the thickness of each titanium oxide layer is the same; the thickness of the active layer is 21 nm;
the source electrode and the drain electrode are both made of aluminum; the thickness is 200 nm;
the preparation method of the thin film transistor comprises the following steps:
(1) cleaning and drying the ITO glass to obtain a grid;
(2) preparing an insulating layer on the grid electrode by adopting an atomic layer deposition method; wherein, the concrete steps are the same as the embodiment 2;
(3) alternately preparing an indium oxide layer and a titanium oxide layer on the insulating layer by adopting an atomic layer deposition technology, and specifically obtaining the active layer comprises the following steps:
1) placing the insulating layer in a vacuum reaction chamber, vacuumizing to 7mbar by using a mechanical pump, and mechanically performing the whole processThe pump always pumps vacuum, N2The flow of the inner reaction cavity is 300, and the flow of the outer wall of the inner reaction cavity is 800 sccm;
2) heating the inner reaction cavity to 200 ℃, opening an electromagnetic valve, introducing DADI at 35 ℃ for 200ms, closing the electromagnetic valve, and then adopting N2Purging for 5 seconds, then introducing room temperature ozone for 300ms, then closing the electromagnetic valve, and finally N2Purging for 5 seconds, and repeating the step for 10 times to obtain an indium oxide layer;
3) opening an electromagnetic valve, introducing 45 ℃ tetra (dimethylamino) titanium for 500ms, then closing the electromagnetic valve, and adopting N2Purging for 5 seconds, introducing room-temperature deionized water for 250ms, closing the electromagnetic valve, and adopting N2Purging for 5 seconds, and repeating the step for 1 time to obtain a titanium oxide layer;
4) repeating the steps 2) and 3) for 30 times to prepare an active layer;
(4) and preparing a source electrode and a drain electrode on the active layer by adopting a thermal evaporation method to obtain the thin film transistor, wherein the specific steps are the same as those in the embodiment 2.
The thin film transistor prepared in example 3 was subjected to an electrical property test, and the result is shown in fig. 3.
As can be seen from fig. 3, the thin film transistor of the bottom-gate top-contact structure provided in this embodiment has a switching ratio of 105The subthreshold swing is 0.68V/dec, and the low threshold voltage is 1.06V.
As can be seen from the above embodiments, the thin film transistor provided by the present invention has good electrical properties and a high on-off ratio.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (10)
1. A thin film transistor comprises a grid, an insulating layer and an active layer which are arranged in sequence from bottom to top; an active layer is arranged on the substrate;
the active layer comprises indium oxide layers and titanium oxide layers which are sequentially and alternately stacked and arranged on the surface of the insulating layer.
2. The thin film transistor according to claim 1, wherein the number of alternation of the indium oxide layer and the titanium oxide layer in the active layer is 15 to 30.
3. The thin film transistor according to claim 1, wherein a thickness ratio of the single indium oxide layer to the single titanium oxide layer in the active layer is (10 to 15): 1; the thickness of each indium oxide layer in the active layer is the same, and the thickness of each titanium oxide layer is the same.
4. The thin film transistor according to claim 1, wherein the active layer has a thickness of 10 to 80 nm.
5. A method of manufacturing a thin film transistor according to any one of claims 1 to 4, comprising the steps of:
preparing a grid electrode on a substrate;
preparing an insulating layer on the grid electrode;
alternately preparing an indium oxide layer and a titanium oxide layer on the insulating layer by adopting an atomic layer deposition technology to obtain an active layer;
and preparing a source electrode and a drain electrode on the active layer.
6. The method of claim 5, wherein the indium oxide layer is prepared by a method comprising the steps of:
(1) placing the insulating layer in an indium gas-phase precursor, and carrying out chemical adsorption to obtain an insulating layer with the surface adsorbed with the indium gas-phase precursor; the gas-phase precursor of the indium comprises dimethyl indium and/or trimethyl indium;
(2) placing the insulating layer with the surface adsorbed with the gas-phase precursor of indium obtained in the step (1) in a gas-phase precursor of oxygen, and performing a displacement reaction to obtain an atomic film; the gas phase precursor of oxygen comprises water vapor and/or ozone;
(3) and (3) carrying out layer-by-layer deposition on the atomic film obtained in the step (2) according to the methods of the steps (1) and (2) to obtain an indium oxide layer.
7. The method according to claim 6, wherein the chemisorption time in the step (1) is 50 to 1000 ms.
8. The method for preparing a titanium oxide layer according to claim 5, wherein the method for preparing a titanium oxide layer comprises the following steps:
1) placing the indium oxide layer in a titanium gas-phase precursor, and carrying out chemical adsorption to obtain an indium oxide layer of which the surface is adsorbed with the titanium gas-phase precursor; the vapor phase precursor of titanium comprises titanium tetrachloride and/or tetrakis (dimethylamino) titanium;
2) placing the indium oxide layer with the surface adsorbed with the titanium gas-phase precursor obtained in the step 1) in an oxygen gas-phase precursor for a displacement reaction to obtain an atomic film; the gas phase precursor of oxygen comprises water vapor and/or ozone;
3) according to the method of the steps 1) and 2), carrying out layer-by-layer deposition on the atomic film obtained in the step 2) to obtain a titanium oxide layer.
9. The method according to claim 8, wherein the chemisorption time in the step 1) is 200 to 800 ms.
10. The method according to claim 8, wherein the time for the shift reaction in step 2) is 100 to 500 ms.
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