CN113471235A

CN113471235A - Display substrate, manufacturing method thereof and transfer method of light-emitting element

Info

Publication number: CN113471235A
Application number: CN202010239457.3A
Authority: CN
Inventors: 陈右儒
Original assignee: BOE Technology Group Co Ltd
Current assignee: BOE Technology Group Co Ltd
Priority date: 2020-03-30
Filing date: 2020-03-30
Publication date: 2021-10-01
Anticipated expiration: 2040-03-30
Also published as: CN113471235B

Abstract

A display substrate and a manufacturing method thereof, a transfer method of a light-emitting element, wherein the display substrate is used for fixing the light-emitting element which is carried by a carrying substrate and is stripped from an original substrate; the display substrate includes: the driving back plate, the driving electrode, the conductive supporting layer, the fixing layer and the auxiliary electrode are arranged on the conductive supporting layer; the driving electrode is arranged on one side of the driving back plate and is connected with the driving back plate; the conductive supporting layer is arranged on one side of the driving electrode, which is far away from the driving back plate, and is connected with the driving electrode; the fixing layer is arranged on the same layer with the conductive supporting layer and is used for fixing the light-emitting element; the auxiliary electrode is arranged on one side of the fixing layer far away from the driving back plate and is respectively connected with the conductive supporting layer and the light-emitting element. The technical scheme provided by the application not only can save time, but also can save production cost.

Description

Display substrate, manufacturing method thereof and transfer method of light-emitting element

Technical Field

The present disclosure relates to the field of display technologies, and in particular, to a display substrate, a manufacturing method thereof, and a transferring method of a light emitting device.

Background

Light Emitting Diode (LED) technology has been developed for nearly thirty years, and provides a solid foundation for its wider application from the original solid-state lighting power supply to the backlight source in the display field to the LED display screen. With the development of chip manufacturing and packaging technologies, sub-millimeter Light Emitting Diode (Mini LED) display of about 50 to 60 micrometers and Micro Light Emitting Diode (Micro LED) display of less than 15 micrometers gradually become a hot spot of display panels. The Micro LED display has the significant advantages of low power consumption, high color gamut, high stability, high resolution, ultra-thin property, easy realization of flexible display, and the like, and is expected to become a more excellent display technology for replacing Organic Light Emitting Diode (OLED) display.

One technical difficulty with Micro LED display technology is the bulk transfer technology. The Micro LED can only be prepared by epitaxial growth, and how to transfer the Micro LED from the initial epitaxial substrate onto the display substrate simply and reliably is a problem in the industry, which hinders the development of the Micro LED display and causes the slow development of the Micro LED display. The Micro LED transfer technology in the related art is time-consuming and high in production cost.

Disclosure of Invention

The application provides a display substrate, a manufacturing method thereof and a transfer method of a light-emitting element, which can save time and reduce production cost.

In a first aspect, the present application provides a display substrate for fixing a light emitting device peeled from an original substrate and carried by a carrier substrate; the display substrate includes: the driving back plate, the driving electrode, the conductive supporting layer, the fixing layer and the auxiliary electrode are arranged on the conductive supporting layer;

the driving electrode is arranged on one side of the driving back plate and is connected with the driving back plate; the conductive supporting layer is arranged on one side of the driving electrode, which is far away from the driving back plate, and is connected with the driving electrode; the fixing layer and the conductive supporting layer are arranged on the same layer and used for fixing the light-emitting element; the auxiliary electrode is arranged on one side, far away from the driving backboard, of the fixing layer and is respectively connected with the conductive supporting layer and the light-emitting element.

In one possible implementation manner, there is no overlapping area between the orthographic projection of the fixed layer on the driving back plate and the orthographic projection of the conductive support layer on the driving back plate, and the interval between the orthographic projection of the fixed layer on the driving back plate and the orthographic projection of the conductive support layer on the driving back plate is equal to 0;

the length of the conductive supporting layer along the direction perpendicular to the driving back plate is equal to the length of the fixing layer along the direction perpendicular to the driving back plate.

In one possible implementation manner, an overlapping area exists between the orthographic projection of the driving electrode on the driving back plate and the orthographic projection of the conductive supporting layer on the driving back plate;

the orthographic projection of the driving electrode on the driving back plate and the orthographic projection of the fixed layer on the driving back plate have no overlapping area.

In one possible implementation, the driving back plate includes: a substrate, a thin film transistor, a power supply electrode and a flat layer;

the thin film transistor is arranged on one side of the substrate, the power supply electrode is arranged on one side of the thin film transistor, which is far away from the substrate, and the flat layer is positioned on one side of the power supply electrode, which is far away from the substrate; the power supply electrode is connected with a drain electrode of the thin film transistor;

wherein the length of the planarization layer along the direction perpendicular to the substrate is greater than 1.5 micrometers; the manufacturing material of the flat layer comprises: acrylic resin or silicone resin.

In one possible implementation manner, a first via hole and a second via hole are arranged on the flat layer;

the power supply electrode includes: the first power supply electrode and the second power supply electrode are connected with the drain electrode of the thin film transistor; the driving electrode includes: the first driving electrode and the second driving electrode are respectively positioned at two sides of the fixed layer;

the first driving electrode is electrically connected with the first power supply electrode through the first via hole, and the second driving electrode is electrically connected with the second power supply electrode through the second via hole.

In one possible implementation, the conductive support layer includes: a first conductive support part and a second conductive support part;

the orthographic projection of the first conductive supporting part on the driving back plate at least partially covers the orthographic projection of the first driving electrode on the driving back plate; the orthographic projection of the second conductive supporting part on the driving back plate at least partially covers the orthographic projection of the second driving electrode on the driving back plate;

the first conductive support part and the second conductive support part are made of materials including: nickel, copper, chromium or gold.

In a possible implementation manner, a via hole exposing the driving backplane is arranged on the fixing layer, and the light emitting element is arranged in the via hole;

the manufacturing material of the fixed layer comprises: and (7) photoresist.

In one possible implementation, the light emitting element includes: a first electrode and a second electrode, the auxiliary electrode comprising: a first auxiliary electrode and a second auxiliary electrode;

the first auxiliary electrode is used for connecting the first electrode and the first conductive supporting part, and the second auxiliary electrode is used for connecting the second electrode and the second conductive supporting part.

In a second aspect, the present application further provides a method for manufacturing a display substrate, for manufacturing the display substrate, the method including:

forming a driving back plate;

forming a driving electrode on the driving back plate;

forming a conductive support layer on the driving back plate on which the driving electrodes are formed;

coating frame sealing glue on the edge of the bearing substrate;

coating a fixed film on the driving back plate with the conductive supporting layer;

aligning and attaching the bearing substrate and the driving back plate coated with the fixed film by using alignment equipment, so that the light-emitting element on the bearing substrate is surrounded by the fixed film coated on the driving back plate;

heating and ultraviolet irradiating the aligned bearing substrate and the drive backboard coated with the fixed film in sequence to cure the fixed film to form a fixed layer comprising a via hole so as to fix the light-emitting element;

stripping the bearing substrate;

forming an auxiliary electrode connecting the conductive support layer and the light emitting element.

In one possible implementation, the forming a driving backplate includes:

providing a substrate;

forming a thin film transistor on the substrate;

forming a power supply electrode comprising a first power supply electrode and a second power supply electrode on one side of the thin film transistor far away from the substrate;

and forming a flat layer comprising a first via hole and a second via hole on one side of the power supply electrode far away from the thin film transistor.

In one possible implementation, the peeling the carrier substrate includes:

and stripping the bearing substrate by adopting a laser process and a physical stripping process.

In a third aspect, the present application also provides a method for transferring a light emitting element, the method comprising:

providing a bearing substrate;

attaching the bearing substrate to the original substrate, and irradiating one side of the original substrate, which is far away from the bearing substrate, by adopting a laser process so as to peel the light-emitting element from the original substrate;

the light-emitting element carried on the carrying substrate is transferred into the display substrate by adopting the manufacturing method of the display substrate.

The application provides a display substrate, a manufacturing method thereof and a transfer method of a light-emitting element, wherein the display substrate is used for fixing the light-emitting element which is borne by a bearing substrate and is stripped from an original substrate; the display substrate includes: the driving back plate, the driving electrode, the conductive supporting layer, the fixing layer and the auxiliary electrode are arranged on the conductive supporting layer; the driving electrode is arranged on one side of the driving back plate and is connected with the driving back plate; the conductive supporting layer is arranged on one side of the driving electrode, which is far away from the driving back plate, and is connected with the driving electrode; the fixing layer is arranged on the same layer with the conductive supporting layer and is used for fixing the light-emitting element; the auxiliary electrode is arranged on one side of the fixing layer far away from the driving back plate and is respectively connected with the conductive supporting layer and the light-emitting element. This application is fixed in the fixed bed through bearing the weight of the light-emitting component who peels off from original base plate on will bearing the weight of the base plate, and connects light-emitting component and drive backplate through auxiliary electrode, electrically conductive supporting layer and drive electrode, has reduced the counterpoint precision, has avoided using the counterpoint equipment of high accuracy, not only can save time, can save manufacturing cost moreover.

Additional features and advantages of the application will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by the practice of the application. Other advantages of the present application may be realized and attained by the instrumentalities and combinations particularly pointed out in the specification and the drawings.

Drawings

The accompanying drawings are included to provide an understanding of the present disclosure and are incorporated in and constitute a part of this specification, illustrate embodiments of the disclosure and together with the examples serve to explain the principles of the disclosure and not to limit the disclosure.

Fig. 1 is a schematic structural diagram of a display substrate according to an embodiment of the present disclosure;

FIG. 2 is a partial top view of FIG. 1;

FIG. 3 is a schematic structural diagram of a carrier substrate according to an exemplary embodiment;

fig. 4 is a schematic structural view of a light-emitting element according to an exemplary embodiment;

fig. 5 is a flowchart of a method for manufacturing a display substrate according to an embodiment of the present disclosure;

6-13 are schematic diagrams of a method of fabricating a display substrate according to an exemplary embodiment;

fig. 14 is a flowchart of a transfer method of a light emitting element according to an embodiment of the present application;

fig. 15 to 17 are schematic diagrams of a transfer method of a light emitting element provided by an exemplary embodiment.

Detailed Description

The present application describes embodiments, but the description is illustrative rather than limiting and it will be apparent to those of ordinary skill in the art that many more embodiments and implementations are possible within the scope of the embodiments described herein. Although many possible combinations of features are shown in the drawings and discussed in the detailed description, many other combinations of the disclosed features are possible. Any feature or element of any embodiment may be used in combination with or instead of any other feature or element in any other embodiment, unless expressly limited otherwise.

The present application includes and contemplates combinations of features and elements known to those of ordinary skill in the art. The embodiments, features and elements disclosed in the present application may also be combined with any conventional features or elements to form a unique application as defined in the claims. Any feature or element of any embodiment may be combined with features or elements from other applications to form yet another unique application defined by the claims. Thus, it should be understood that any of the features shown and/or discussed in this application may be implemented alone or in any suitable combination. Accordingly, the embodiments are not limited except as by the appended claims and their equivalents. Furthermore, various modifications and changes may be made within the scope of the appended claims.

Further, in describing representative embodiments, the specification may have presented the method and/or process as a particular sequence of steps. However, to the extent that the method or process does not rely on the particular order of steps set forth herein, the method or process should not be limited to the particular sequence of steps described. Other orders of steps are possible as will be understood by those of ordinary skill in the art. Therefore, the particular order of the steps set forth in the specification should not be construed as limitations on the claims. Further, the claims directed to the method and/or process should not be limited to the performance of their steps in the order written, and one skilled in the art can readily appreciate that the sequences may be varied and still remain within the spirit and scope of the embodiments of the present application.

Unless otherwise defined, technical or scientific terms used throughout the disclosure of the embodiments of the present application shall have the ordinary meaning as understood by those having ordinary skill in the art to which the present application belongs. The use of "first," "second," and similar terms in the embodiments of the present application do not denote any order, quantity, or importance, but rather the terms are used to distinguish one element from another. The word "comprising" or "comprises", and the like, means that the element or item listed before the word covers the element or item listed after the word and its equivalents, but does not exclude other elements or items. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships may also be changed accordingly.

Fig. 1 is a schematic structural diagram of a display substrate according to an embodiment of the present disclosure, and fig. 2 is a partial top view of fig. 1. As shown in fig. 1 and fig. 2, the display substrate provided in the embodiment of the present application is used to fix the light emitting element 50 peeled from the original substrate and carried by the carrier substrate. The display substrate includes: a driving back plate 10, a driving electrode 20, a conductive support layer 30, a fixing layer 40, and an auxiliary electrode 60.

Specifically, the driving electrode 20 is disposed on one side of the driving backplate 10 and connected to the driving backplate 10; the conductive support layer 30 is disposed on a side of the driving electrode 20 away from the driving backplane 10, and is connected to the driving electrode 20, for supporting the carrier substrate when the light-emitting element on the carrier substrate is transferred to the display substrate; a fixing layer 40 disposed at the same layer as the conductive support layer 30, for fixing the light emitting element 50; the auxiliary electrode 60 is disposed on a side of the fixing layer 40 away from the driving back plate 10, and is connected to the conductive support layer 30 and the light emitting element 50, respectively.

In an exemplary embodiment, as shown in fig. 1, a display substrate includes: the pixel regions P arranged in a plurality of arrays are exemplified by two pixel regions as illustrated in fig. 1. Fig. 2 is a partial top view of a pixel region.

In an exemplary embodiment, the driving electrode 20 may be made of a metal or a transparent conductive material. The transparent conductive material may include: indium tin oxide. When the driving electrode is made of metal, the structure of the driving electrode 20 may be a single-layer structure or a multi-layer structure. When the structure of the driving electrode 20 is a multi-layer structure, the driving electrode may include: two metal layers arranged in a stacked manner; the second metal layer is positioned on the side of the first metal layer far away from the driving backboard.

In an exemplary embodiment, the first metal layer may be made of a material including: titanium.

In an exemplary embodiment, the second metal layer may be made of a material including: aluminum.

In an exemplary embodiment, the shape of the driving electrode 20 may be a pillar or other shape.

In an exemplary embodiment, the driving electrode 20 is connected to the light emitting element 50 through the conductive support layer 30 and the auxiliary electrode 60, and the alignment accuracy required by the present application is only required to ensure that the light emitting element is located on the fixed layer, which greatly reduces the accuracy of the apparatus when the light emitting element is transferred and reduces the time required for alignment.

In one exemplary embodiment, the light emitting element may include a Micro LED. The size of the Micro LED is micron, and the Micro LED can be configured in various shapes, for example, the orthographic projection of the Micro LED on the original substrate can be configured to be square, round or trapezoid, etc. Fig. 1 illustrates an example in which the orthogonal projection of the light emitting element on the original substrate is a square.

In an exemplary embodiment, the original substrate may be a sapphire substrate, a silicon substrate, a gallium nitride substrate, or the like, which is not limited in this embodiment.

Fig. 3 is a schematic structural diagram of a carrier substrate according to an exemplary embodiment. As shown in fig. 3, the carrier substrate includes: a substrate 1 and a colloidal layer 2 sequentially disposed on the substrate 1. The colloid layer 2 includes: a release layer 2A and an adhesive layer 2B. The release layer 2A is disposed on the side of the adhesive layer 2B close to the substrate 1.

In an exemplary embodiment, the substrate 1 may be a glass substrate, a plastic substrate, or other transparent substrate.

In an exemplary embodiment, the carrier substrate carries the light emitting element 50 peeled off from the original substrate, wherein the light emitting element 50 is located on the side of the adhesive layer 2B away from the base 1.

Fig. 4 is a schematic structural diagram of a light-emitting element according to an exemplary embodiment. As shown in fig. 4, an exemplary embodiment provides a light emitting element including: the light emitting device includes a buffer layer 51, an N-type semiconductor layer 52, a light emitting layer 53, a P-type semiconductor layer 54, an ohmic contact electrode 55, a first electrode 56, and a second electrode 57, which are sequentially stacked. It will be understood by those skilled in the art that the plurality of light emitting elements are formed on an original substrate by forming a buffer layer 51 on the original substrate, growing an N-type semiconductor layer 52, a light emitting layer 53, and a P-type semiconductor layer 54 on the buffer layer, forming an ohmic electrode in contact with the P-type semiconductor layer, and finally forming a first electrode 56 in contact with the ohmic electrode 55 and a second electrode 57 in contact with the N-type semiconductor layer 52.

As shown in fig. 4, the light-emitting layer 53 includes: a first quantum well layer 531 and a second quantum well layer 532. The second quantum well layer 532 is located on the side of the first quantum well layer 531 away from the buffer layer 51.

In an exemplary embodiment, the buffer layer 51 may be made of silicon oxide, silicon nitride, or a composite of silicon oxide and silicon nitride. The length of the buffer layer 51 in the direction perpendicular to the original substrate is 2800-.

In one exemplary embodiment, the buffer layer 51 has a length of 3000 nm in a direction perpendicular to the original substrate.

In one exemplary embodiment, the length of the N-type semiconductor layer 52 along the direction perpendicular to the original substrate is 700-900 nm.

In one exemplary embodiment, the length of the N-type semiconductor layer 52 in a direction perpendicular to the original substrate is 800 nm.

In one exemplary embodiment, the length of the first quantum well layer 531 in the direction perpendicular to the original substrate is 200-300 nm.

In one exemplary embodiment, the length of the first quantum well layer 531 in the direction perpendicular to the original substrate is 250 nm.

In one exemplary embodiment, the length of the second quantum well layer 532 in the direction perpendicular to the original substrate is 150-200 nm.

In one exemplary embodiment, the length of the second quantum well layer 532 in the direction perpendicular to the original substrate is 180 nanometers.

In one exemplary embodiment, the length of the P-type semiconductor layer 54 along the direction perpendicular to the original substrate is 100-150 nm.

In one exemplary embodiment, the length of the P-type semiconductor layer 54 in a direction perpendicular to the original substrate is 120 nm.

In one exemplary embodiment, the ohmic contact electrode 55 is made of a metal. The ohmic contact electrode 55 may have a single-layer structure or may have a stacked-layer structure. When the ohmic contact electrode 55 has a stacked-layer structure, the ohmic contact electrode includes: the buffer layer is arranged on the first metal layer.

In one exemplary embodiment, the first metal layer may be made of nickel, and the length of the first metal layer in a direction perpendicular to the original substrate is 4-6 nm.

In one exemplary embodiment, the length of the first metal layer in the direction perpendicular to the original substrate is 5 nm.

In one exemplary embodiment, the second metal layer may be made of gold, and the length of the second metal layer in a direction perpendicular to the original substrate is 4-6 nm.

In one exemplary embodiment, the length of the second metal layer in the direction perpendicular to the original substrate is 5 nm.

In one exemplary embodiment, the first electrode 56 and the second electrode 57 are formed using the same process. The first electrode 56 and the second electrode 57 are made of metal. The structure of the first electrode 56 and the second electrode 57 may be a single layer structure or may be a stacked layer structure. When the first electrode 56 and the second electrode 57 are a stacked structure, the first electrode 56 and the second electrode 57 include: the buffer layer is arranged on the first metal layer, and the buffer layer is arranged on the second metal layer.

In one exemplary embodiment, the third metal layer may be made of titanium, and the length of the third metal layer in a direction perpendicular to the original substrate is 8-12 nm.

In one exemplary embodiment, the length of the third metal layer in the direction perpendicular to the original substrate is 10 nm.

In an exemplary embodiment, the fourth metal layer may be made of gold or silver, and the length of the fourth metal layer in a direction perpendicular to the original substrate is 90-110 nm.

In one exemplary embodiment, the length of the fourth metal layer in a direction perpendicular to the original substrate is 100 nm.

The display substrate is used for fixing the light-emitting element which is borne by the bearing substrate and is stripped from the original substrate; the display substrate includes: the driving back plate, the driving electrode, the conductive supporting layer, the fixing layer and the auxiliary electrode are arranged on the conductive supporting layer; the driving electrode is arranged on one side of the driving back plate and is connected with the driving back plate; the conductive supporting layer is arranged on one side of the driving electrode, which is far away from the driving back plate, and is connected with the driving electrode; the fixing layer is arranged on the same layer with the conductive supporting layer and is used for fixing the light-emitting element; the auxiliary electrode is arranged on one side of the fixing layer far away from the driving back plate and is respectively connected with the conductive supporting layer and the light-emitting element. This application is fixed in the fixed bed through bearing the weight of the light-emitting component who peels off from original base plate on will bearing the weight of the base plate, and connects light-emitting component and drive backplate through auxiliary electrode, electrically conductive supporting layer and drive electrode, has reduced the counterpoint precision, has avoided using the counterpoint equipment of high accuracy, not only can save time, can save manufacturing cost moreover.

In one exemplary embodiment, as shown in fig. 1, there is no overlap area between the orthographic projection of the fixed layer 40 on the driven backplane 10 and the orthographic projection of the conductive support layer 30 on the driven backplane 10.

In one exemplary embodiment, the spacing between the orthographic projection of the fixed layer 40 on the driven backplane 10 and the orthographic projection of the conductive support layer 30 on the driven backplane 10 is equal to 0. The fixing layer 40 is in direct contact with the conductive support layer 30. The conductive support layer 30 may function to define a fixed layer.

In one exemplary embodiment, the length of the conductive support layer 30 in the direction perpendicular to the driving backplane is equal to the length of the fixed layer 40 in the direction perpendicular to the driving backplane.

In an exemplary embodiment, there is an overlapping area between the orthographic projection of the driving electrode 20 on the driving back plate 10 and the orthographic projection of the conductive support layer 30 on the driving back plate 10.

The driving electrodes 20 are projected on the driving back plate 10 in an overlapping region with the conductive support layer 30, and the conductive support layer 30 can also protect the driving electrodes 20.

In an exemplary embodiment, the orthographic projection of the conductive support layer 30 on the driving back plate 10 may completely cover the orthographic projection of the driving electrodes 20 on the driving back plate 10, or the orthographic projection of the conductive support layer 30 on the driving back plate 10 may not completely cover the orthographic projection of the driving electrodes 20 on the driving back plate 10.

In an exemplary embodiment, there is no overlap area between the orthographic projection of the driving electrode 20 on the driving backplate 10 and the orthographic projection of the fixed layer 40 on the driving backplate 10.

In an exemplary embodiment, there is no overlapping area of the orthographic projection of the driving electrode 20 on the driving backplate 10 and the orthographic projection of the light emitting element 50 on the driving backplate.

In an exemplary embodiment, as shown in fig. 1, the driving back plate 10 includes: a substrate 11, a thin film transistor 12, a first insulating layer 13, a second insulating layer 14, a power supply electrode 15, and a planarization layer 16.

Specifically, the thin film transistor 12 is disposed on one side of the substrate 11, the power supply electrode 15 is disposed on one side of the thin film transistor 12 away from the substrate 11, and the planarization layer 16 is disposed on one side of the power supply electrode 15 away from the substrate 11; the power supply electrode 15 is connected to the drain electrode of the thin film transistor.

In one exemplary embodiment, the substrate 11 may be a rigid substrate or a flexible substrate, wherein the rigid substrate may be, but is not limited to, one or more of glass, a sheet of metal ; the flexible substrate may be, but is not limited to, one or more of polyethylene terephthalate, ethylene terephthalate, polyetheretherketone, polystyrene, polycarbonate, polyarylate, polyimide, polyvinyl chloride, polyethylene, textile fibers.

In one exemplary embodiment, the thin film transistor 12 includes: an active layer, a gate electrode, a source electrode, and a drain electrode. The source electrode and the drain electrode are respectively connected with the active layer. The thin film transistor may be a top gate structure, or a bottom gate structure. Fig. 1 illustrates a thin film transistor as an example of a bottom gate structure.

In one exemplary embodiment, the gate electrode may be made of a metal. The metal may be molybdenum. The length of the gate electrode along the direction perpendicular to the substrate is 150-250 nm.

In one exemplary embodiment, the gate electrode has a length of 200 nm in a direction perpendicular to the substrate.

In an exemplary embodiment, the active layer may be made of a metal oxide or polysilicon. The metal oxide may be indium gallium zinc oxide. The length of the active layer along the direction perpendicular to the substrate is 30-50 nm.

In one exemplary embodiment, the length of the active layer in the direction perpendicular to the substrate is 40 nanometers.

In one exemplary embodiment, the source electrode and the drain electrode may be made of metal. The metal may be molybdenum. The length of the source electrode and the drain electrode along the direction perpendicular to the substrate is 150-250 nm.

In one exemplary embodiment, the length of the source and drain electrodes in a direction perpendicular to the substrate is 200 nanometers.

As shown in fig. 1, a first insulating layer 13 is disposed between the active layer and the gate electrode. A second insulating layer 14 is provided on the side of the source and drain electrodes remote from the substrate 11.

In an exemplary embodiment, the first insulating layer 13 and the second insulating layer 14 may be made of silicon oxide, silicon nitride, or a composite of silicon oxide and silicon nitride.

In one exemplary embodiment, the length of the first insulating layer 13 in the direction perpendicular to the substrate is 130-170 nm.

In one exemplary embodiment, the length of the first insulating layer 13 in the direction perpendicular to the substrate is 150 nm.

In one exemplary embodiment, the length of the second insulating layer 14 along the direction perpendicular to the substrate is 280-320 nm.

In one exemplary embodiment, the length of the second insulating layer 14 in the direction perpendicular to the substrate is 300 nanometers.

In one exemplary embodiment, the length of the power supply electrode 15 in the direction perpendicular to the substrate is 350-450 nm.

In one exemplary embodiment, the length of the power supply electrode 15 in the direction perpendicular to the substrate is 400 nm.

In an exemplary embodiment, the material of which the power feeding electrode 15 is made is metal. The structure of the feeding electrode 15 may be a single-layer structure or a stacked-layer structure. When the structure of the feeding electrode 15 is a laminated structure, the feeding electrode 15 includes: and the fifth metal layer, the sixth metal layer and the seventh metal layer are arranged in a laminated manner. The fifth metal layer is arranged on one side of the sixth metal layer close to the substrate, and the seventh metal layer is arranged on one side of the fifth metal layer far away from the substrate.

In an exemplary embodiment, the fifth metal layer and the seventh metal layer may be made of titanium.

In an exemplary embodiment, the sixth metal layer may be made of aluminum.

In one exemplary embodiment, the length of the planarization layer 16 in the direction perpendicular to the substrate is greater than 1.5 microns.

In an exemplary embodiment, the material of the planarization layer 16 may be acrylic resin or silicone resin.

In an exemplary embodiment, the flat layer is disposed in the driving backplane, so that uniformity of the light emitting elements bound on the driving backplane can be ensured, and display effect of the display substrate is improved.

In one exemplary embodiment, as shown in fig. 1, a first via V1 and a second via V2 are disposed on the planarization layer 16 in each pixel region.

In an exemplary embodiment, the number of the first vias V1 is at least one, and the shape of the cross section of the first via may be a circle, a square, or other shape.

In an exemplary embodiment, the number of the second vias V2 is at least one, and the shape of the cross section of the first via may be a circle, a square, or other shape.

In an exemplary embodiment, as shown in fig. 1, the power supply electrode 15 includes: a first power supply electrode 151 and a second power supply electrode 152, and the second power supply electrode 152 is connected to the drain electrode of the thin film transistor 12.

In one exemplary embodiment, as shown in fig. 1, the driving electrode 20 includes: the first driving electrode 21 and the second driving electrode 22, and the first driving electrode 21 and the second driving electrode 22 are respectively located at both sides of the fixed layer 40.

The first driving electrode 21 is electrically connected to the first power supply electrode 151 through the first via V1, and the second driving electrode 22 is electrically connected to the second power supply electrode 152 through the second via V2.

In one exemplary embodiment, as shown in fig. 1, the conductive support layer 30 includes: a first conductive support part 31 and a second conductive support part 32. The orthographic projection of the first conductive support part 31 on the driving back plate 10 at least partially covers the orthographic projection of the first driving electrode 21 on the driving back plate 10; the orthographic projection of the second conductive support part 32 on the driving back plate 10 at least partially covers the orthographic projection of the second driving electrode 32 on the driving back plate 10.

In an exemplary embodiment, the material of the first and second

conductive supports

31 and 32 may include: nickel, copper, chromium or gold.

In an exemplary embodiment, as shown in fig. 1, a via hole exposing the driving backplane is disposed on the fixing layer 40, and the light emitting element 50 is disposed in the via hole.

In an exemplary embodiment, the fixing layer 40 is made of a material including: and (7) photoresist.

The light emitting element 50 includes: a first surface and a second surface arranged oppositely; the first electrode 56 and the second electrode 57 are located at the second surface.

In one exemplary embodiment, as shown in fig. 2, in each pixel region, the auxiliary electrode 60 includes: a first auxiliary electrode 61 and a second auxiliary electrode 62.

The first auxiliary electrode 61 is used to connect the first electrode 56 and the first conductive support 31, and the second auxiliary electrode 62 is used to connect the second electrode 57 and the second conductive support 32.

In an exemplary embodiment, the first surface of the light emitting element 50 is in direct contact with the driving backplate 10.

In an exemplary embodiment, the first auxiliary electrode 61 and the second auxiliary electrode 62 may be made of a metal or a transparent conductive material.

An embodiment of the present application further provides a manufacturing method of a display substrate, and fig. 5 is a flowchart of the manufacturing method of the display substrate provided in the embodiment of the present application. As shown in fig. 5, the method for manufacturing a display substrate according to the embodiment of the present application is used for manufacturing the display substrate according to the embodiment, and the method for manufacturing a display substrate specifically includes the following steps.

Step S11, forming a driving back plate.

Step S12, forming driving electrodes on the driving back plate.

Step S13, forming a conductive support layer on the driving back plate formed with the driving electrodes.

In one exemplary embodiment, there is an overlapping area of the orthographic projection of the conductive support layer on the driving back plate and the orthographic projection of the driving electrode on the driving back plate.

Step S14, coating a sealant on the edge of the carrier substrate.

Step S15, a fixing film is coated on the driving back plate formed with the conductive support layer.

And step S16, aligning and attaching the bearing substrate and the driving back plate coated with the fixed film by using an alignment device, so that the light-emitting element on the bearing substrate is surrounded by the fixed film coated on the driving back plate.

And step S17, heating and ultraviolet irradiating the aligned carrier substrate and the drive backboard coated with the fixed film in sequence, so that the fixed film is cured to form a fixed layer comprising via holes to fix the light-emitting element.

Specifically, step S17 includes: and heating the aligned bearing substrate and the drive back plate coated with the fixed film by adopting a post-baking process unit.

And step S18, stripping the bearing substrate.

Step S19, forming an auxiliary electrode connecting the conductive support layer and the light emitting element.

The display substrate is provided in the foregoing embodiments, and the implementation principle and the implementation effect thereof are similar, and are not described herein again.

In an exemplary embodiment, step S11 includes: providing a substrate; forming a thin film transistor on a substrate; forming a power supply electrode including a first power supply electrode and a second power supply electrode on a side of the thin film transistor away from the substrate; a planarization layer including a first via hole and a second via hole is formed on a side of the power supply electrode away from the thin film transistor.

In one exemplary embodiment, forming a thin film transistor on a substrate includes: depositing a first metal film on a substrate, and patterning the first metal film through a patterning process to form a gate electrode; depositing a first insulating film on a glass substrate with a gate electrode, and patterning the first insulating film through a patterning process to form a first insulating layer; forming an active layer on the gate insulating layer; depositing a second metal film on the glass substrate on which the active layer is formed, and patterning the second metal film through a patterning process to form a source drain electrode; and depositing a first insulating film on the stripping substrate for forming the source and drain electrodes, and patterning the first insulating film through a patterning process to form a second insulating layer.

In one exemplary embodiment, forming the power supply electrode including the first power supply electrode and the second power supply electrode on the side of the thin film transistor away from the substrate includes: and depositing a third metal film on the second insulating layer, and patterning the third metal film through a patterning process to form a power supply electrode comprising a first power supply electrode and a second power supply electrode.

In one exemplary embodiment, forming the planarization layer including the first via hole and the second via hole at a side of the power supply electrode away from the thin film transistor includes: and coating a flat film on the side of the power supply electrode, which is far away from the thin film transistor, and patterning the flat film through a photoetching process to form a flat layer.

In an exemplary embodiment, before depositing the first metal thin film on the substrate, the method of fabricating the display substrate further includes: and cleaning the substrate.

In one exemplary embodiment, peeling the carrier substrate includes: and stripping the bearing substrate by adopting a laser process and a physical stripping process.

In one exemplary embodiment, a carrier substrate includes: the base, the release layer and the adhesion layer are arranged in a stacked mode. Peeling off the carrier substrate includes: sequentially stripping the substrate and the release layer by adopting a laser process; and stripping the adhesive layer by chemical dissolution or physical stripping.

A method for manufacturing a display substrate according to an exemplary embodiment is further described with reference to fig. 1, fig. 2, and fig. 6 to fig. 13.

Step S111, providing a substrate 11, cleaning the substrate 11, depositing a first metal film on the substrate 11, and patterning the first metal film through a patterning process to form a gate electrode; depositing a first insulating film on the glass substrate on which the gate electrode is formed, and patterning the first insulating film by a patterning process to form a first insulating layer 13; forming an active layer on the gate insulating layer; depositing a second metal film on the glass substrate on which the active layer is formed, and patterning the second metal film through a patterning process to form a source drain electrode; a first insulating film is deposited on the lift-off substrate on which the source and drain electrodes are formed, and the first insulating film is patterned by a patterning process to form a second insulating layer 14 to form the thin film transistor 12, as shown in fig. 6.

Step S112, depositing a third metal film on the second insulating layer 14, and patterning the third metal film through a patterning process to form the power supply electrode 15 including the first power supply electrode 151 and the second power supply electrode 152, as shown in fig. 7.

Step S113, coating a flat film on the side of the power supply electrode 15 away from the thin film transistor 12, patterning the flat film through a photolithography process, and forming a flat layer 16 including a first via hole V1 and a second via hole V2 to form the driving backplate 10, as shown in fig. 8.

Step S114, forming the driving electrode 20 including the first driving electrode 21 and the second driving electrode 22 on the driving back plate 10, as shown in fig. 9.

Step S115, forming a conductive support layer 30 including a first conductive support part 31 and a second conductive support part 32 on the driving back plate 10 formed with the driving electrodes 20, as shown in fig. 10.

Step S116, coating a frame sealing adhesive (not shown) on the edge of the carrier substrate, and coating a fixing film 400 on the driving backplane on which the conductive supporting layer is formed, as shown in fig. 11.

Step S117, using an alignment device to align and attach the carrier substrate 100 and the driving backplane 10 coated with the fixing film 400, so that the light emitting element 50 on the carrier substrate is surrounded by the fixing film 400 coated on the driving backplane 10, and sequentially performing heating and ultraviolet irradiation treatment on the aligned carrier substrate and the driving backplane coated with the fixing film, so that the fixing film is cured to form a fixing layer 40 including a via hole, so as to fix the light emitting element, as shown in fig. 12.

Step S118, sequentially stripping the base 1 and the release layer 2A in the carrier substrate 100 by using a laser process, as shown in fig. 13.

Step S119, stripping the adhesive layer 2B by chemical dissolution or physical stripping, as shown in FIG. 1.

Step S120 of forming the auxiliary electrode 60 including the first auxiliary electrode 61 and the second auxiliary electrode 62 connecting the light emitting element 50 and the conductive support layer 30, as shown in fig. 2.

The embodiment of the present application further provides a method for transferring a light emitting element, and fig. 14 is a flowchart of the method for transferring a light emitting element provided in the embodiment of the present application. As shown in fig. 14, the method for transferring a light emitting element provided in the embodiment of the present application specifically includes the following steps:

and S21, forming a bearing substrate.

In an exemplary embodiment, step S210 includes: providing a substrate, forming a release layer on the substrate, and forming an adhesive layer on the release layer.

And S22, bonding the bearing substrate and the original substrate, and irradiating the side of the original substrate far away from the bearing substrate by adopting a laser process so as to strip the light-emitting element from the original substrate.

In one exemplary embodiment, the surface of the carrier substrate on which the adhesive layer is located is attached to the surface of the original substrate on which the light emitting device is disposed.

In one exemplary embodiment, a 248 nm or 193 nm laser is used to lift off the light emitting elements from the original substrate.

In one exemplary embodiment, the carrier substrate selectively carries the light emitting elements on the original substrate. The arrangement of the light emitting elements on the original substrate is different from the arrangement of the light emitting elements carried on the carrying substrate.

Step S23, transferring the light emitting element carried on the carrier substrate to the display substrate by using the display substrate manufacturing method.

In one exemplary embodiment, the light emitting element may include a Micro LED. The size of the Micro LED is micron, and the Micro LED can be configured in various shapes, for example, the orthographic projection of the Micro LED on the original substrate can be configured to be square, round or trapezoid, etc.

The manufacturing method of the display substrate is the manufacturing method of the display substrate provided in the foregoing embodiment, and the display substrate is the display substrate provided in the foregoing embodiment, so that the implementation principle and the implementation effect are similar, and are not described herein again.

A method for transferring a light emitting element provided by an exemplary embodiment is further described below with reference to fig. 15-17.

In step 211, a carrier substrate 100 is formed, as shown in fig. 15.

The carrier substrate 100 includes: the substrate 1, the release layer 2A and the adhesive layer 2B are stacked.

Step 212, the carrier substrate 100 is attached to the original substrate 200, as shown in fig. 16.

The original substrate 200 is provided with a plurality of light emitting elements 50.

Step 213, irradiating the original substrate 200 far from the carrier substrate 100 by using a laser process to peel the light emitting element 50 from the original substrate 200, and transferring the original substrate 200, as shown in fig. 17.

Step 214, using steps S111-S120 in the foregoing embodiments, transfers the light emitting elements on the carrier substrate into the display substrate.

The drawings of the embodiments of the present application relate only to the structures related to the embodiments of the present application, and other structures may refer to general designs.

In the drawings used to describe embodiments of the present application, the thickness and dimensions of layers or microstructures are exaggerated for clarity. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "under" another element, it can be "directly on" or "under" the other element or intervening elements may be present.

Although the embodiments disclosed in the present application are described above, the descriptions are only for the convenience of understanding the present application, and are not intended to limit the present application. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the disclosure as defined by the appended claims.

Claims

1. The display substrate is characterized by being used for fixing a light-emitting element which is carried by a carrying substrate and is stripped from an original substrate; the display substrate includes: the driving back plate, the driving electrode, the conductive supporting layer, the fixing layer and the auxiliary electrode are arranged on the conductive supporting layer;

2. The display substrate of claim 1, wherein there is no overlapping area between the orthographic projection of the fixed layer on the driving back plate and the orthographic projection of the conductive support layer on the driving back plate, and the interval between the orthographic projection of the fixed layer on the driving back plate and the orthographic projection of the conductive support layer on the driving back plate is equal to 0;

3. The display substrate of claim 2, wherein there is an overlapping area between the orthographic projection of the driving electrode on the driving back plate and the orthographic projection of the conductive support layer on the driving back plate;

4. The display substrate of claim 1, wherein the driving backplane comprises: a substrate, a thin film transistor, a power supply electrode and a flat layer;

5. The display substrate of claim 4, wherein the planarization layer has a first via and a second via disposed thereon;

6. The display substrate of claim 5, wherein the conductive support layer comprises: a first conductive support part and a second conductive support part;

7. The display substrate according to claim 1, wherein the fixing layer is provided with a via hole exposing the driving backplane, and the light emitting element is disposed in the via hole;

the manufacturing material of the fixed layer comprises: and (7) photoresist.

8. The display substrate according to claim 6, wherein the light-emitting element comprises: a first electrode and a second electrode, the auxiliary electrode comprising: a first auxiliary electrode and a second auxiliary electrode;

9. A method of manufacturing a display substrate, for manufacturing a display substrate according to any one of claims 1 to 8, the method comprising:

forming a driving back plate;

forming a driving electrode on the driving back plate;

coating frame sealing glue on the edge of the bearing substrate;

stripping the bearing substrate;

10. The method of claim 9, wherein forming a driving back plate comprises:

providing a substrate;

forming a thin film transistor on the substrate;

11. The method of claim 9, wherein the peeling the carrier substrate comprises:

12. A method of transferring a light emitting element, the method comprising:

providing a bearing substrate;

transferring the light emitting element carried on the carrier substrate into the display substrate according to any one of claims 1 to 8 by using the method for manufacturing a display substrate according to any one of claims 9 to 11.