CN113465745A - Temperature measurement method based on infrared point temperature instrument - Google Patents
Temperature measurement method based on infrared point temperature instrument Download PDFInfo
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- CN113465745A CN113465745A CN202110743184.0A CN202110743184A CN113465745A CN 113465745 A CN113465745 A CN 113465745A CN 202110743184 A CN202110743184 A CN 202110743184A CN 113465745 A CN113465745 A CN 113465745A
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- 238000000034 method Methods 0.000 title claims abstract description 49
- 238000009529 body temperature measurement Methods 0.000 title claims abstract description 33
- 230000005855 radiation Effects 0.000 claims description 20
- 238000004861 thermometry Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/02—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
Abstract
The application belongs to the technical field of temperature measurement of infrared point thermometers, and particularly relates to a temperature measurement method based on an infrared point thermometer, which comprises the following steps: measuring the true temperature T of the surface of a sample objectSample(s)(ii) a Measuring the emittance M of the surface of a sample objectSample(s)(ii) a Calculating to obtain the real emissivity epsilon (lambda, T) of the surface of the sample objectSample(s)) (ii) a Establishing a true temperature T of a surface of a sample objectSample(s)With true emissivity e (λ, T)Sample(s)) The corresponding relation between the two; corresponding to the real emissivity epsilon (lambda, T) of the surface of the sample objectSample(s)) Setting the emissivity epsilon (lambda, T) of the surface of the objectObject) Measuring the measured temperature T of the surface of the object by using an infrared point temperature instrumentObject(ii) a If the temperature T is measuredObjectDeviation from the corresponding true temperature TSample(s)If the value is larger, the emissivity epsilon (lambda, T) of the object surface is resetObject)。
Description
Technical Field
The application belongs to the technical field of temperature measurement of infrared point thermometers, and particularly relates to a temperature measurement method based on an infrared point thermometer.
Background
In some temperature measurement scenes, the temperature is as high as 1200-1800 ℃, and under the condition, the temperature measurement is difficult to carry out by using a contact temperature measurement method, and mostly, the temperature measurement is carried out by using a non-contact temperature measurement method.
The infrared point thermometer is used for measuring temperature, is a common non-contact temperature measurement form, and has the following principle:
wherein the content of the first and second substances,
TLmeasuring the surface temperature of the object;
lambda is the wavelength of the emitted light of the infrared point thermometer;
c2 is a second radiation constant, 1.4388 x 10-2 m.K;
c1 is a first radiation constant, 3.7418 x 10-8 W.m;
ε (λ, T) is the emissivity of the object surface;
M0the radiation emittance generated by the object surface to the outside.
Currently, when measuring temperature with an infrared thermometer, the emissivity e (λ, T) of the object surface is set to be a fixed value, however, in practice, the emissivity e (λ, T) of the object surface, the function of the emission light wavelength λ and the object surface temperature T, in the case of a certain emission light wavelength λ, the function of the object surface temperature T varies with the object surface temperature T, and when measuring the object surface temperature with a large span, the emissivity e (λ, T) of the object surface is set to be a fixed value, which affects the reliability of the temperature measurement result.
The present application has been made in view of the above-mentioned technical drawbacks.
It should be noted that the above background disclosure is only for the purpose of assisting understanding of the inventive concept and technical solutions of the present invention, and does not necessarily belong to the prior art of the present patent application, and the above background disclosure should not be used for evaluating the novelty and inventive step of the present application without explicit evidence to suggest that the above content is already disclosed at the filing date of the present application.
Disclosure of Invention
The object of the present application is to provide a thermometry method based on an infrared thermometer to overcome or alleviate at least one of the technical drawbacks of the known prior art.
The technical scheme of the application is as follows:
a temperature measurement method based on an infrared point thermometer comprises the following steps:
measuring the true temperature T of the surface of a sample objectSample(s)；
Measuring the emittance M of the surface of a sample objectSample(s)；
Calculating to obtain the real emissivity epsilon (lambda, T) of the surface of the sample objectSample(s))；
Establishing a true temperature T of a surface of a sample objectSample(s)With true emissivity e (λ, T)Sample(s)) The corresponding relation between the two;
corresponding to the real emissivity epsilon (lambda, T) of the surface of the sample objectSample(s)) Setting the emissivity epsilon (lambda, T) of the surface of the objectObject) Measuring the measured temperature T of the surface of the object by using an infrared point temperature instrumentObject；
If the temperature T is measuredObjectDeviation from the corresponding true temperature TSample(s)If the value is larger, the emissivity epsilon (lambda, T) of the object surface is resetObject)。
According to at least one embodiment of the present application, in the above-mentioned thermometry method based on infrared thermometer, the true temperature T of the surface of the sample object is measuredSample(s)The method specifically comprises the following steps:
measuring the true temperature T of the surface of the sample object with a thermocoupleSample(s)。
According to at least one embodiment of the present application, in the temperature measuring method based on the infrared thermometer, the measured emittance M of the surface of the sample objectSample(s)The method comprises the following steps:
setting the emissivity epsilon (lambda, T) of the sample object surfaceSample(s)') obtaining the measured temperature T of the surface of the sample object by measuring with an infrared point temperature instrumentSample(s)’；
Calculating to obtain the radiation emittance M of the surface of the sample objectSample(s)。
According to at least one embodiment of the present application, in the temperature measuring method based on the infrared thermometer, the radiation emittance M of the surface of the sample object is obtained through calculationSample(s)The method specifically comprises the following steps:
wherein:
lambda is the wavelength of the emitted light of the infrared point thermometer;
c2 is a second radiation constant, 1.4388 x 10-2 m.K;
c1 is the first radiation constant, 3.7418X 10-8 W.m.
According to at least one embodiment of the present application, in the temperature measurement method based on the infrared thermometer, the calculating obtains the real emissivity epsilon (λ, T) of the surface of the sample objectSample(s)) The method specifically comprises the following steps:
wherein:
lambda is the wavelength of the emitted light of the infrared point thermometer;
c2 is a second radiation constant, 1.4388 x 10-2 m.K;
c1 is the first radiation constant, 3.7418X 10-8 W.m.
According to at least one embodiment of the present application, in the temperature measuring method based on the infrared thermometer, the real temperature T of the surface of the sample object is establishedSample(s)With true emissivity e (λ, T)Sample(s)) The corresponding relationship between the two is specifically as follows:
with the true emissivity epsilon (lambda, T) of the sample object surfaceSample(s)) With a true temperature range TSample(s). + -. Δ T corresponds.
According to at least one embodiment of the present application, in the temperature measuring method based on the infrared thermometer, if the temperature T is measuredObjectDeviation from the corresponding true temperature TSample(s)Larger, resetEmissivity of object surface epsilon (lambda, T)Object) The method specifically comprises the following steps:
if the temperature T is measuredObjectExceeding the corresponding true temperature TSample(s)In the range of +/-delta T, resetting the emissivity epsilon (lambda, T) of the surface of the objectObject)。
Drawings
Fig. 1 is a flowchart of a temperature measurement method based on an infrared thermometer according to an embodiment of the present disclosure.
For the purpose of better illustrating the embodiments, certain features of the drawings may be omitted, enlarged or reduced, and do not represent the size of an actual product; further, the drawings are for illustrative purposes, and terms describing positional relationships are limited to illustrative illustrations only and are not to be construed as limiting the patent.
Detailed Description
In order to make the technical solutions and advantages of the present application clearer, the technical solutions of the present application will be further clearly and completely described in the following detailed description with reference to the accompanying drawings, and it should be understood that the specific embodiments described herein are only some of the embodiments of the present application, and are only used for explaining the present application, but not limiting the present application. It should be noted that, for convenience of description, only the parts related to the present application are shown in the drawings, other related parts may refer to general designs, and the embodiments and technical features in the embodiments in the present application may be combined with each other to obtain a new embodiment without conflict.
In addition, unless otherwise defined, technical or scientific terms used in the description of the present application shall have the ordinary meaning as understood by one of ordinary skill in the art to which the present application belongs. The terms "upper", "lower", "left", "right", "center", "vertical", "horizontal", "inner", "outer", and the like used in the description of the present application, which indicate orientations, are used only to indicate relative directions or positional relationships, and do not imply that the devices or elements must have a specific orientation, be constructed and operated in a specific orientation, and when the absolute position of the object to be described is changed, the relative positional relationships may be changed accordingly, and thus, should not be construed as limiting the present application. The use of "first," "second," "third," and the like in the description of the present application is for descriptive purposes only to distinguish between different components and is not to be construed as indicating or implying relative importance. The use of the terms "a," "an," or "the" and similar referents in the context of describing the application is not to be construed as an absolute limitation on the number, but rather as the presence of at least one. The word "comprising" or "comprises", and the like, when used in this description, is intended to specify the presence of stated elements or items, but not the exclusion of other elements or items.
Further, it is noted that, unless expressly stated or limited otherwise, the terms "mounted," "connected," and the like are used in the description of the invention in a generic sense, e.g., connected as either a fixed connection or a removable connection or integrally connected; can be mechanically or electrically connected; they may be directly connected or indirectly connected through an intermediate medium, or they may be connected through the inside of two elements, and those skilled in the art can understand their specific meaning in this application according to the specific situation.
The present application is described in further detail below with reference to fig. 1.
A temperature measurement method based on an infrared point thermometer comprises the following steps:
measuring the true temperature T of the surface of a sample objectSample(s)；
Measuring the emittance M of the surface of a sample objectSample(s)；
Calculating to obtain the real emissivity epsilon (lambda, T) of the surface of the sample objectSample(s))；
Establishing a true temperature T of a surface of a sample objectSample(s)With true emissivity e (λ, T)Sample(s)) The corresponding relation between the two;
corresponding to the real emissivity epsilon (lambda, T) of the surface of the sample objectSample(s)) Setting the emissivity epsilon (lambda, T) of the surface of the objectObject) Measuring the measured temperature T of the surface of the object by using an infrared point temperature instrumentObject；
If the temperature T is measuredObjectDeviation from the corresponding true temperature TSample(s)If the value is larger, the emissivity epsilon (lambda, T) of the object surface is resetObject)。
For the temperature measurement method based on the infrared thermometer disclosed in the above embodiments, it can be understood by those skilled in the art that the temperature measurement method is based on the established real temperature T of the surface of the sample objectSample(s)With true emissivity e (λ, T)Sample(s)) The corresponding relation between the two is the basis, and the set emissivity epsilon (lambda, T) of the surface of the objectObject) And correcting to ensure the reliability of the temperature measurement result of the infrared thermometer.
For the temperature measurement method based on the infrared point thermometer disclosed in the above embodiments, it can be understood by those skilled in the art that, in order to ensure the accuracy of the temperature measurement result of the infrared point thermometer, the sample object and the actually measured object should be manufactured by the same material and processing technology, and have the same roughness on the surface.
In some optional embodiments, in the above method for measuring temperature based on infrared thermometer, the true temperature T of the surface of the sample object is measuredSample(s)The method specifically comprises the following steps:
measuring the true temperature T of the surface of the sample object with a thermocoupleSample(s)。
In some optional embodiments, in the above method for measuring temperature based on an infrared thermometer, the measured emittance M of the surface of the sample objectSample(s)The method comprises the following steps:
setting the emissivity epsilon (lambda, T) of the sample object surfaceSample(s)') obtaining the measured temperature T of the surface of the sample object by measuring with an infrared point temperature instrumentSample(s)’；
Calculating to obtain the radiation emittance M of the surface of the sample objectSample(s)。
In some optional embodiments, in the temperature measurement method based on the infrared thermometer, the calculating obtains the emittance M of the surface of the sample objectSample(s)The method specifically comprises the following steps:
wherein:
lambda is the wavelength of the emitted light of the infrared point thermometer;
c2 is a second radiation constant, 1.4388 x 10-2 m.K;
c1 is the first radiation constant, 3.7418X 10-8 W.m.
In some optional embodiments, in the above thermometry method based on an infrared thermometer, the calculating obtains a true emissivity epsilon (λ, T) of the surface of the sample objectSample(s)) The method specifically comprises the following steps:
wherein:
lambda is the wavelength of the emitted light of the infrared point thermometer;
c2 is a second radiation constant, 1.4388 x 10-2 m.K;
c1 is the first radiation constant, 3.7418X 10-8 W.m.
In some optional embodiments, in the above method for measuring temperature based on infrared thermometer, the real temperature T of the surface of the sample object is establishedSample(s)With true emissivity e (λ, T)Sample(s)) The corresponding relationship between the two is specifically as follows:
with the true emissivity epsilon (lambda, T) of the sample object surfaceSample(s)) With a true temperature range TSample(s). + -. Δ T corresponds.
For the temperature measurement method based on the infrared thermometer disclosed in the above embodiments, it can be understood by those skilled in the art that each real emissivity e (λ, T) of the surface of the sample objectSample(s)) Has a real temperature range TSample(s)The ± Δ T corresponds, each Δ T may have a different value, and a specific value may be determined by a related technical person according to a specific practice when applying the technical scheme disclosed in the present application, at an adjacent real emissivity e (λ, T)Sample(s)) Corresponding true temperature T betweenSample(s)In the presence of large spans, a difference can be made between them to avoid adjacent real emissivities ε (λ, T)Sample(s)) Large temperature span occurs between the two, and the accuracy of temperature measurement is influenced.
In one embodiment, the true emissivity e (λ, T) of the surface of the sample objectSample(s)) With a true temperature range TSample(s)The ± Δ T correspondence style is as follows:
in some optional embodiments, in the above temperature measuring method based on the infrared thermometer, if the temperature T is measuredObjectDeviation from the corresponding true temperature TSample(s)If the value is larger, the emissivity epsilon (lambda, T) of the object surface is resetObject) The method specifically comprises the following steps:
if the temperature T is measuredObjectOut of the corresponding true temperature range TSample(s)+ -Delta T, resetting the emissivity epsilon (lambda, T) of the object surfaceObject) Then, the measured temperature T of the surface of the object is measured by an infrared point temperature instrumentObjectUntil the temperature T is measuredObjectIn the corresponding real temperature range TSample(s)Within ± Δ T.
For the temperature measurement method based on the infrared thermometer disclosed in the above embodiments, it can be understood by those skilled in the art that the set surface emissivity e (λ, T) of the objectObject) Is the true emissivity epsilon (lambda, T)Sample(s)) If the temperature T is measuredObjectExceeds the real emissivity e (lambda, T)Sample(s)) Corresponding true temperature range TSample(s)Δ T, the emissivity ε (λ, T) of the object surface can be resetObject) Is the true emissivity epsilon (lambda, T)Sample(s)) Of the real emissivity e (λ, T)Sample(s)) Corresponding true temperature range TSample(s)+/-delta T internal covering measured temperature TObject。
The embodiments are described in a progressive manner in the specification, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
Having thus described the present application in connection with the preferred embodiments illustrated in the accompanying drawings, it will be understood by those skilled in the art that the scope of the present application is not limited to those specific embodiments, and that equivalent modifications or substitutions of related technical features may be made by those skilled in the art without departing from the principle of the present application, and those modifications or substitutions will fall within the scope of the present application.
Claims (7)
1. A temperature measurement method based on an infrared point thermometer is characterized by comprising the following steps:
measuring the true temperature T of the surface of a sample objectSample(s)；
Measuring the emittance M of the surface of a sample objectSample(s)；
Calculating to obtain the real emissivity epsilon (lambda, T) of the surface of the sample objectSample(s))；
Establishing a true temperature T of a surface of a sample objectSample(s)With true emissivity e (λ, T)Sample(s)) The corresponding relation between the two;
corresponding to the real emissivity epsilon (lambda, T) of the surface of the sample objectSample(s)) Setting the emissivity epsilon (lambda, T) of the surface of the objectObject) Measuring the measured temperature T of the surface of the object by using an infrared point temperature instrumentObject；
If the temperature T is measuredObjectDeviation from the corresponding true temperature TSample(s)If the value is larger, the emissivity epsilon (lambda, T) of the object surface is resetObject)。
2. The infrared thermometer-based temperature measurement method according to claim 1,
the true temperature T of the surface of the sample object is measuredSample(s)The method specifically comprises the following steps:
measuring the true temperature T of the surface of the sample object with a thermocoupleSample(s)。
3. The infrared thermometer-based temperature measurement method according to claim 1,
the measured emittance M of the surface of the sample objectSample(s)The method comprises the following steps:
setting the emissivity epsilon (lambda, T) of the sample object surfaceSample(s)') obtaining the measured temperature T of the surface of the sample object by measuring with an infrared point temperature instrumentSample(s)’；
Calculating to obtain the radiation emittance M of the surface of the sample objectSample(s)。
4. The infrared thermometer-based temperature measurement method according to claim 1,
the radiation emittance M of the surface of the sample object is obtained through calculationSample(s)The method specifically comprises the following steps:
wherein:
lambda is the wavelength of the emitted light of the infrared point thermometer;
c2 is a second radiation constant, 1.4388 x 10-2 m.K;
c1 is the first radiation constant, 3.7418X 10-8 W.m.
5. The infrared thermometer-based temperature measurement method according to claim 1,
the calculation obtains the real emissivity epsilon (lambda, T) of the surface of the sample objectSample(s)) The method specifically comprises the following steps:
wherein:
lambda is the wavelength of the emitted light of the infrared point thermometer;
c2 is a second radiation constant, 1.4388 x 10-2 m.K;
c1 is the first radiation constant, 3.7418X 10-8 W.m.
6. The infrared thermometer-based temperature measurement method according to claim 1,
establishing a true temperature T of a surface of a sample objectSample(s)With true emissivity e (λ, T)Sample(s)) The corresponding relationship between the two is specifically as follows:
with the true emissivity epsilon (lambda, T) of the sample object surfaceSample(s)) With a true temperature range TSample(s). + -. Δ T corresponds.
7. The infrared thermometer-based temperature measurement method according to claim 6,
if the temperature T is measuredObjectDeviation from the corresponding true temperature TSample(s)If the value is larger, the emissivity epsilon (lambda, T) of the object surface is resetObject) The method specifically comprises the following steps:
if the temperature T is measuredObjectOut of the corresponding true temperature range TSample(s)+ -Delta T, resetting the emissivity epsilon (lambda, T) of the object surfaceObject)。
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08219888A (en) * | 1995-02-13 | 1996-08-30 | Nissin Electric Co Ltd | Infrared ray emitting temperature measuring method |
| US20050276308A1 (en) * | 2004-06-10 | 2005-12-15 | Pint Charles S | Method and apparatus for measuring temperature and emissivity |
| CN110567591A (en) * | 2019-09-25 | 2019-12-13 | 核工业北京地质研究院 | Temperature/emissivity inversion method suitable for ground thermal infrared data |
| CN111721423A (en) * | 2020-06-19 | 2020-09-29 | 中国人民解放军63660部队 | Three-band target surface temperature inversion method |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08219888A (en) * | 1995-02-13 | 1996-08-30 | Nissin Electric Co Ltd | Infrared ray emitting temperature measuring method |
| US20050276308A1 (en) * | 2004-06-10 | 2005-12-15 | Pint Charles S | Method and apparatus for measuring temperature and emissivity |
| CN110567591A (en) * | 2019-09-25 | 2019-12-13 | 核工业北京地质研究院 | Temperature/emissivity inversion method suitable for ground thermal infrared data |
| CN111721423A (en) * | 2020-06-19 | 2020-09-29 | 中国人民解放军63660部队 | Three-band target surface temperature inversion method |
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Application publication date: 20211001 |