CN113451727A - Millimeter wave ring coupler based on multilayer packaging integrated substrate gap waveguide - Google Patents
Millimeter wave ring coupler based on multilayer packaging integrated substrate gap waveguide Download PDFInfo
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- H01P5/18—Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers
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Abstract
The invention discloses a millimeter wave ring coupler based on a multilayer packaging integrated substrate gap waveguide, which belongs to the electrical field and specifically comprises the following components: constructing three layers of media, wherein the bottommost layer is a PMC (printed Circuit Board) layer with the lower surface coated with metal copper, a plurality of metal through holes are periodically arranged in the PMC layer, the upper side of the PMC layer is tightly propped against a circular metal patch, and the lower side of the PMC layer is connected with the metal copper to form a mushroom-type EBG (Electron Back-propagation gap) array; the middle layer is a dielectric plate; the uppermost layer is a gap layer, the lower surface is printed with a mixed ring coupling microstrip line, and the upper surface is coated with a layer of metal copper; the microstrip lines comprise four sections of microstrip lines as ports, and seven sections of microstrip lines form a two-section type mixed ring; by exciting different ports, the bandwidth is enhanced to 50% by the two-section type mixed ring structure; the metal copper on the uppermost layer and the mushroom-type EBG array on the lowermost layer in the three-layer dielectric plate form a substrate gap waveguide, the working frequency band is distributed in the range from 24GHz to 40GHz, and most of 5G millimeter wave frequency bands are covered. The invention has low transmission loss, compact structure and easy processing and integration.
Description
Technical Field
The invention belongs to the field of electricity, relates to a passive radio frequency device, and particularly relates to a millimeter wave ring coupler based on a multilayer packaging integrated substrate gap waveguide.
Background
In recent years, the demand for wireless communication is increasing day by day, the development of communication technology is continuously promoted, with the popularization of wireless communication equipment, the low-frequency spectrum resource is increasingly tense, and the crowded spectrum cannot meet the requirements of high speed, large capacity and low delay of a future mobile communication system.
With the development of 5G mobile communication systems, the entire mobile communication industry begins to explore brand new frequency bands, and research on high-frequency bands, especially millimeter-wave frequency bands, is receiving more and more attention from researchers and experts. As an important component of a wireless communication system, in order to meet the complex and diverse requirements of a modern communication system, a multi-port rf device needs to be capable of operating in multiple frequency bands or covering a wider frequency band range, and meanwhile, the miniaturization, easy package integration and multi-functionalization of the device are also popular research contents.
The coupler performs distribution, synthesis and isolation of signals and power, and plays an important role in the front end of the radio frequency system. A Hybrid Ring Coupler (also called Rat-Race Coupler), which is called a Hybrid Ring for short. The microwave signal can be output in the same direction or in the reverse direction according to a certain power proportion, and the two paths of signals can also be synthesized into a sum signal or a difference signal; meanwhile, the high-isolation power divider has good isolation degree independent of balanced load and is widely applied to components such as a mixer, a modem and a high-isolation power divider. In addition, the mixing ring also has a relatively flat phase response. Because of these advantages, hybrid rings have long been valued by researchers at home and abroad.
The traditional hybrid ring coupler is composed of three lambda/4 branch lines and one 3 lambda/4 branch line, has the advantages of simple design, high input port isolation and the like, but has obvious defects, and because a 270-degree transmission line is adopted, the bandwidth is relatively narrow, the occupied area is large, and the application of the hybrid ring coupler in a broadband system is limited.
In recent years, researchers and expert scholars have made much research into the miniaturization and bandwidth improvement of hybrid ring couplers. The conventional waveguide structure such as a microstrip line structure, a strip line structure or a rectangular waveguide structure has problems of radiation loss, surface wave, insertion loss, high processing cost, easy generation of mode conversion loss and the like, and thus, the design requirements of high-frequency circuits cannot be met, so researchers aim at the gap waveguide structure capable of corresponding to a millimeter wave frequency band. The three-layer packaging type integrated substrate gap waveguide structure adopts the full dielectric layer, and compared with the metal type gap waveguide, the three-layer packaging type integrated substrate gap waveguide structure is easy to process and low in cost, wherein transmission lines can be randomly wired, the design is very flexible, and different types of radio frequency devices can be conveniently designed.
Disclosure of Invention
Aiming at the problems, the invention provides a millimeter wave annular coupler based on multilayer packaging integrated substrate gap waveguide, which adopts a two-section type hybrid ring coupler structure, greatly widens the working bandwidth of the coupler, and simultaneously realizes the hybrid ring coupler by a three-layer packaging integrated substrate gap waveguide mode, so that the working frequency band can be easily improved to a millimeter wave frequency band; the method meets the requirements of future radio frequency communication systems, and has important practical significance and application value.
The millimeter wave hybrid ring coupler is constructed in three layers of media, the bottommost layer is a PMC layer, a layer of metal copper is coated on the lower surface of the PMC layer, a plurality of metal through holes are periodically arranged on the PMC layer, the whole metal through hole penetrates through the PMC layer, the upper side of the metal through hole is tightly propped against a round metal patch, and the lower side of the metal through hole is connected with the metal copper to form a mushroom-type EBG array; the structural dimensions are identical.
A layer of dielectric plate is arranged above the mushroom-shaped EBG array and is used as an intermediate layer; a dielectric plate is arranged above the middle layer and is used as a gap layer; the lower surface of the gap layer is printed with a mixed ring coupling microstrip line, and the mixed ring coupling microstrip line is separated from the circular metal patch through a medium plate in the middle layer; the upper surface of the gap layer is coated with a layer of metal copper for shielding electromagnetic waves and realizing self-packaging.
The mixed ring coupling microstrip line is composed of 11 sections of microstrip lines, wherein the microstrip line 1, the microstrip line 2, the microstrip line 3 and the microstrip line 4 are port impedance matching microstrip lines, and the rest microstrip line 5, the microstrip line 6, the microstrip line 7, the microstrip line 8, the microstrip line 9, the microstrip line 10 and the microstrip line 11 form a two-section type mixed ring.
The concrete structure is as follows: microstrip line 1 is the input port of whole circuit, and the microstrip line that sets up with microstrip line 1 vertically includes: the method comprises the following steps from top to bottom: the microstrip line 2 is used as an output through port, and the microstrip line 5 and the microstrip line 4 are used as output coupling ports; the microstrip line 1 is positioned in the middle of the microstrip line 5;
the microstrip line 2 is vertically connected with the microstrip line 6, the microstrip line 6 is horizontally connected with the microstrip line 9 and is vertically connected with the microstrip line 8; and microstrip line 6 is located at the connection of microstrip lines 8 and 9; the other end of the microstrip line 8 is vertically connected with a microstrip line 7 and a microstrip line 10; and is located at the connection of the microstrip lines 7 and 10; the other end of the microstrip line 7 is positioned at the connection part of the microstrip line 4 and the microstrip line 5; the other end of the microstrip line 10 horizontally connected with the microstrip line 7 is simultaneously and horizontally connected with the microstrip line 3, and the microstrip line 3 is an isolated output port; the microstrip line 11 is vertically connected, and the microstrip line 11 is positioned between the parallel microstrip line 9 and the microstrip line 10; while being connected to the microstrip line 3.
The microstrip lines 1-4 are all wave ports and have the same width, and the microstrip lines 6, 7, 9 and 10 are all lambda/4 branch lines and have the same length; microstrip lines 6 and 7 are parallel and have the same size, microstrip lines 9 and 10 are parallel and have the same size, and microstrip lines 5, 8 and 11 are parallel and are all lambda/2 branch lines and have the same length.
The working process of the millimeter wave annular coupler is as follows:
when the input port 1 is excited, due to the copper layer above the gap layer and the encapsulation of the mushroom-shaped EBG array below, quasi-TEM mode waves are transmitted in the gap layer along the microstrip line 1, are equally divided into two paths after passing through the microstrip line 5, the signal power of an output through port at the microstrip line 2 is equally divided from the signal power of an output coupling port of the microstrip line 4, and the phases are the same; the waves transmitted along the microstrip lines 6 and 7 pass through the microstrip line 8, and the electromagnetic fields are mutually offset; the isolated output port of the microstrip line 3 is isolated.
When the isolated output port 3 is excited, similarly, due to encapsulation, a quasi-TEM mode wave propagates in the gap layer along the microstrip line 3, is transmitted to the microstrip line 9 through the microstrip line 11, and cancels an electromagnetic field at the microstrip line 8 with a wave transmitted in the microstrip line 10 at the same time; the wave along the microstrip lines 6 and 7 respectively reaches the output through port of the microstrip line 2 and the output coupling port of the microstrip line 4, the signal power is equally divided, the phase difference is 180 degrees, and the electromagnetic fields of the microstrip lines 5 are mutually counteracted, so that the input port 1 at the microstrip line 1 is isolated.
When the microstrip line-type quasi-TEM mode electromagnetic wave power combiner is used as a power combiner, an output through port of the microstrip line 2 and an output coupling port of the microstrip line 4 are simultaneously excited, similarly, due to packaging, quasi-TEM mode waves propagate in a gap layer along the microstrip lines 2 and 4, a sum of input signals is formed at a port of the microstrip line 1 through the microstrip line 5, waves along the microstrip lines 6 and 7 pass through the microstrip line 8, and electromagnetic fields are mutually counteracted; the isolated output port of the microstrip line 3 forms the difference of the input signals.
The two-section type hybrid ring structure is formed by three sections of lambda/2 branch microstrip lines 5, 8 and 11 and four sections of lambda/4 branch microstrip lines 6, 7, 9 and 10, and the bandwidth is enhanced to 50%; in the three-layer dielectric plate structure, the metal copper on the upper surface of the gap layer and the mushroom-shaped EBG array below the middle-layer dielectric plate are adopted, so that quasi-TEM mode waves can only be transmitted in the gap layer to form substrate gap waveguides, the working frequency band is distributed in the range from 24GHz to 40GHz, most of 5G millimeter wave frequency bands are covered, and meanwhile, the characteristics of a 3dB hybrid ring coupler are met.
The invention has the advantages that:
1) the millimeter wave ring coupler based on the multilayer packaging integrated substrate gap waveguide has the characteristics of good in-band matching and isolation, low insertion loss, small phase and amplitude imbalance and the like, and in the working frequency band of the embodiment of the invention, the matching is less than-10 dB, the isolation is less than-20 dB, the insertion loss is minus 3 +/-0.5 dB, the amplitude imbalance is less than 0.5dB, and the phase imbalance is 180 +/-6.7 degrees.
2) The invention discloses a millimeter wave ring coupler based on multilayer packaging integrated substrate gap waveguide, which adopts a two-section type mixed ring structure on the basis of the traditional mixed ring coupler, and can ensure that the mixed ring coupler has broadband performance in a working frequency band. The center frequency of one embodiment of the invention is 32GHz, the-10 dB bandwidth of the embodiment is as high as 50%, the working frequency band is distributed in the range of 24GHz to 40GHz, most of 5G millimeter wave frequency bands can be covered, and the invention can be widely applied to 5G communication systems.
3) The millimeter wave ring coupler based on the multilayer packaging integrated substrate gap waveguide is characterized in that a traditional hybrid ring coupler is composed of a microstrip line, a medium and a metal ground, and the problems that transmission loss is too large, efficiency is reduced and the like possibly occur to the traditional hybrid ring coupler in a millimeter wave frequency band are solved. In order to reduce the transmission loss of electromagnetic waves, the three-layer packaging integrated substrate gap waveguide is used for replacing the traditional microstrip line to realize the millimeter wave hybrid ring coupler, and the gap waveguide has the characteristics of low transmission loss of the electromagnetic waves in the millimeter wave frequency band, compact structure, easy processing and integration and the like.
Drawings
FIG. 1 is a schematic diagram of a millimeter wave ring coupler based on a multilayer package integrated substrate gap waveguide according to the present invention;
FIG. 2 is a schematic structural diagram of a millimeter wave ring coupler based on a multilayer packaging integrated substrate gap waveguide according to the present invention;
FIG. 3 is a schematic plane structure diagram of a microstrip line circuit of the gap waveguide millimeter wave ring coupler according to the present invention;
FIG. 4 is a diagram illustrating a dispersion curve simulation result of a periodic EBG structure according to an embodiment of the present invention;
FIG. 5 is a diagram illustrating simulation results of matching, isolation, coupling and transmission coefficients of a hybrid ring coupler when port 1 is excited according to an embodiment of the present invention;
FIG. 6 is a diagram illustrating simulation results of matching, isolation, coupling and transmission coefficients of a hybrid ring coupler when port 3 is excited according to an embodiment of the present invention;
fig. 7 is a diagram illustrating simulation results of the amplitude and phase imbalance of the output port of the hybrid ring coupler according to the embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings in conjunction with the following detailed description. It should be understood that the description is intended to be exemplary only, and is not intended to limit the scope of the present invention. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present invention.
The gap waveguides are classified into 3 types, which are ridge gap waveguides, slot gap waveguides, and microstrip gap waveguides, respectively. In the ridge gap waveguide and the groove gap waveguide, electromagnetic waves propagate along the metal ridge and the metal groove respectively, and the two structures do not need any other electrolyte and are realized by using a metal pin structure. Microstrip-gap waveguides are similar to inverted or suspended microstrip lines, and under the action of a placed Artificial Magnetic Conductor (AMC), an electromagnetic field propagates in the air gap between the microstrip line and the upper metal plate.
Electromagnetic waves are transmitted in an air gap between two metal plates which are parallel up and down, and due to the forbidden band characteristic of an Electromagnetic Band Gap (EBG) structure, the electromagnetic waves can only be transmitted along the gap above a planned metal ridge or groove, so that the problem of loss of the electromagnetic waves in medium transmission is well avoided.
The invention relates to a millimeter wave ring coupler based on a multilayer packaging integrated substrate gap waveguide, which is realized by a multilayer printed circuit board as shown in figure 1, wherein the upper surface and the lower surface of the whole body are coated with a layer of metal copper, so that the shielding effect and self-packaging can be realized, and the millimeter wave ring coupler is provided with three dielectric layers, wherein the dielectric layer 1 is a gap layer, the lower surface of the dielectric layer is printed with a mixed ring coupling microstrip line, the dielectric layer 2 is a middle layer, the dielectric layer 3 is a PMC layer, and the millimeter wave ring coupler consists of mushroom-shaped EBG arrays which are periodically arranged. The millimeter wave hybrid ring coupler integrally comprises an input port 1, a through output port 2, a coupling output port 4 and an isolation port 3 which are all wave ports.
As shown in fig. 2, in the three layers of media of the millimeter wave hybrid ring coupler, the bottom layer is a PMC layer, a layer of metal copper is coated on the lower surface of the PMC layer, a plurality of metal via holes are periodically arranged on the PMC layer, the whole metal via hole penetrates through the PMC layer, the upper side of the metal via hole is tightly propped against a circular metal patch, and the lower side of the metal via hole is connected with the metal copper, so that a mushroom-type EBG array is formed; the structural dimensions are identical.
A layer of dielectric plate is arranged above the mushroom-shaped EBG array and is used as an intermediate layer; the middle layer is preferably an RT5880 dielectric layer without any treatment, and a dielectric plate is arranged above the middle layer and is used as a gap layer;
the lower surface of the gap layer is printed with a mixed ring coupling microstrip line, and the mixed ring coupling microstrip line is separated from the circular metal patch through a medium plate in the middle layer; the upper surface of the gap layer is coated with a layer of metal copper for shielding electromagnetic waves and realizing self-packaging.
The mixed ring coupling microstrip line is composed of 11 sections of microstrip lines, wherein the microstrip line 1, the microstrip line 2, the microstrip line 3 and the microstrip line 4 are port impedance matching microstrip lines, and the rest microstrip line 5, the microstrip line 6, the microstrip line 7, the microstrip line 8, the microstrip line 9, the microstrip line 10 and the microstrip line 11 form a two-section type mixed ring.
The concrete structure is as follows: microstrip line 1 is the input port of whole circuit, and the microstrip line that sets up with microstrip line 1 vertically includes: the microstrip line 2 is used as an output straight-through port, and the microstrip line 5 and the microstrip line 4 are used as output coupling ports from top to bottom; the microstrip line 1 is positioned in the right middle of the microstrip line 5; microstrip line 2, microstrip line 5 and microstrip line 4 are aligned on the left side.
The microstrip line 2 is vertically connected with the microstrip line 6, the microstrip line 6 is horizontally connected with the microstrip line 9 and is vertically connected with the microstrip line 8; and microstrip line 6 is located at the connection of microstrip lines 8 and 9; the other end of the microstrip line 8 is vertically connected with a microstrip line 7 and a microstrip line 10; and is located at the connection of the microstrip lines 7 and 10; the other end of the microstrip line 7 is positioned at the connection part of the microstrip line 4 and the microstrip line 5; the other end of the microstrip line 10 horizontally connected with the microstrip line 7 is simultaneously and horizontally connected with the microstrip line 3, and the microstrip line 3 is an isolated output port; the microstrip line 11 is vertically connected, and the microstrip line 11 is positioned between the parallel microstrip line 9 and the microstrip line 10; while being connected to the microstrip line 3.
The microstrip lines 1-4 are all wave ports and have the same width, and the microstrip lines 6, 7, 9 and 10 are all lambda/4 branch lines and have the same length; microstrip lines 6 and 7 are parallel and have the same size, microstrip lines 9 and 10 are parallel and have the same size, and microstrip lines 5, 8 and 11 are parallel and are all lambda/2 branch lines and have the same length.
The working process of the millimeter wave annular coupler is as follows:
when the input port 1 is excited, due to the copper layer above the gap layer and the encapsulation of the mushroom-shaped EBG array below, quasi-TEM mode waves are transmitted in the gap layer along the microstrip line 1, are equally divided into two paths after passing through the microstrip line 5, the signal power of an output through port at the microstrip line 2 is equally divided from the signal power of an output coupling port of the microstrip line 4, and the phases are the same; the waves transmitted along the microstrip lines 6 and 7 pass through the microstrip line 8, and the electromagnetic fields are mutually offset; the isolated output port of the microstrip line 3 is isolated.
When the isolated output port 3 is excited, similarly, due to encapsulation, a quasi-TEM mode wave propagates in the gap layer along the microstrip line 3, is transmitted to the microstrip line 9 through the microstrip line 11, and cancels an electromagnetic field at the microstrip line 8 with a wave transmitted in the microstrip line 10 at the same time; the wave along the microstrip lines 6 and 7 respectively reaches the output through port of the microstrip line 2 and the output coupling port of the microstrip line 4, the signal power is equally divided, the phase difference is 180 degrees, and the electromagnetic fields of the microstrip lines 5 are mutually counteracted, so that the input port 1 at the microstrip line 1 is isolated.
When the microstrip line-type quasi-TEM mode electromagnetic wave power combiner is used as a power combiner, an output through port of the microstrip line 2 and an output coupling port of the microstrip line 4 are simultaneously excited, similarly, due to packaging, quasi-TEM mode waves propagate in a gap layer along the microstrip lines 2 and 4, a sum of input signals is formed at a port of the microstrip line 1 through the microstrip line 5, waves along the microstrip lines 6 and 7 pass through the microstrip line 8, and electromagnetic fields are mutually counteracted; the isolated output port of the microstrip line 3 forms the difference of the input signals.
The traditional hybrid ring coupler adopts 3 sections of lambda/4 transmission lines and 1 section of 3 lambda/4 transmission lines, the bandwidth is only 20% -30%, and the invention forms a two-section hybrid ring structure by three sections of lambda/2 branch microstrip lines 5, 8 and 11 and four sections of lambda/4 branch microstrip lines 6, 7, 9 and 10, thereby increasing a section of rat-race enhanced bandwidth to 50%; in the three-layer dielectric plate structure, the metal copper on the upper surface of the gap layer and the mushroom-shaped EBG array below the middle-layer dielectric plate are adopted, so that quasi-TEM mode waves can only be transmitted in the gap layer, the three-layer packaging integrated substrate gap waveguide is formed, the working frequency band is distributed in a range from 24GHz to 40GHz, most of 5G millimeter wave frequency bands are covered, and meanwhile, the characteristics of the 3dB hybrid ring coupler are met.
The scattering matrix for the 3dB hybrid ring coupler is:
j is an imaginary number; the four values in the first row of the matrix S represent: port 1 is perfectly matched, port 3 is perfectly isolated, the signal amplitude values of ports 2 and 4 are both one-half of the input signal, and the phase difference is minus 90 degrees from the input signal, so 2 and 4 are in phase.
For example, in the third row, port 2 is 90 degrees out of phase with the input port, and port 4 is minus 90 degrees out of phase with the input port, so that ports 2 and 4 are 180 degrees out of phase.
Examples
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.
At present, experts and scholars in the field of radio frequency have started to research millimeter wave devices, and in order to meet the requirements of future communication systems, the invention discloses an embodiment of a millimeter wave ring coupler based on multilayer packaging integrated substrate gap waveguide.
The gap layer of the dielectric layer 1 and the middle layer of the dielectric layer 2 are both selected from Rogers RT/duroid 5880, dielectric constant is 2.2, thickness is 0.127mm, dielectric loss is 0.0009, the PMC layer of the dielectric layer 3 is selected from Rogers RO4350B, dielectric constant is 3.48, thickness is 1.524mm, and dielectric loss is 0.004. The method is realized by utilizing a multilayer printed circuit board technology, the method is mature, and the design thought is simple; the broadband microstrip antenna has the characteristics of compact structure, wide frequency band, obvious band-pass characteristic, small insertion loss, good phase imbalance and amplitude imbalance characteristics and capability of working in a millimeter wave frequency band.
As shown in fig. 3, a coupler microstrip line circuit is printed between dielectric layers 1 and 2. The characteristic impedances of the input port, the through port, the isolation port and the coupling port are all 50 ohms, and the width W of the microstrip line 1-4 of the port0Is 0.34mm, and has arbitrary length, in this embodiment, the length L11.54mm, length L22.1mm, length L31.44mm, length L4＝2.1mm。
The microstrip lines 5, 8 and 11 are each a lambda/2 branch, having the sameLength L1803.3mm, each width is W1＝0.21mm，W3＝0.7mm，W5The microstrip lines 6, 7, 9 and 10 are each λ/4 branch lines having the same length L, 0.31mm901.65mm, wherein the microstrip lines 6, 7 have the same width W20.28mm, the same width of the microstrip lines 9, 10 is W40.17 mm. The mushroom-type EBG structure is formed by connecting a metal patch and a metal via hole, wherein the diameter dc of the metal patch is 1.2mm, the diameter dp of the metal via hole is 0.4mm, the height Hp of the via hole is 1.524mm, and the period p is 1.5 mm.
The embodiment takes a-10 dB bandwidth as a pass band, the return loss in the pass band is very small, and the return loss is very large at lower or higher frequencies, so that the embodiment has very good pass band characteristics.
FIG. 4 is a schematic diagram showing a simulation of a dispersion curve of an electromagnetic bandgap cell (EBG) used in the examples; as can be seen from the figure, the electromagnetic band gap unit can provide a wave resistance band of 14-40.5GHz, namely, a pass band of 14-40.5GHz is provided for the gap waveguide; the electromagnetic bandgap cells of the known embodiments all provide a wide wave-stop band, providing a large space for frequency selection of the integrated substrate gap waveguide.
As shown in fig. 5 and 6, the return loss, isolation and insertion loss parameters when port 1 and port 3 are excited for the embodiment (center frequency 32 GHz);
when the port 1 is excited, the frequency range of which the return loss is less than-10 dB is 24GHz to 40GHz, and the relative bandwidth reaches 50%; when the port 3 is excited, the frequency range with the return loss less than-10 dB is 23.9GHz to 39.6GHz, and the relative bandwidth reaches 49%, so that the present embodiment has better broadband performance compared with the traditional millimeter wave hybrid ring coupler. The isolation performance is more than 20dB from 24GHz to 40GHz of the passband.
Loss parameter in the range of 24GHz to 40GHz S21And S41S with amplitudes of-3 +/-0.5 dB and at central frequency of 32GHz21And S41The magnitudes of (a) and (b) are-3.1 dB and-3.05 dB, respectively, indicating that the insertion loss in the passband is small. The implementation has large bandwidth, good port matching and isolationHigh performance.
Fig. 7 shows simulation results of amplitude and phase imbalance according to an embodiment of the present invention. E.g., left axis, amplitude imbalance (| S) in the passband 24GHz to 40GHz range21|-|S41All less than 0.5dB, and the amplitude is unbalanced (| S) in the pass band range23|-|S43All | are greater than-0.67 dB. The right axis is the phase imbalance curve of this embodiment, with the phase imbalance being 180 ± 6.7 ° within the passband of this embodiment. The experimental data can well reflect various performances of the millimeter wave annular coupler based on the multilayer packaging integrated substrate gap waveguide, and the millimeter wave annular coupler can cover a wider frequency range and has a wide application scene.
The size of the whole embodiment is 7.5mm multiplied by 1.778mm, the size has the characteristics of miniaturization and integration, and the hybrid ring coupler can work in a millimeter wave frequency band by adopting a printed circuit board technology based on the structure of the gap waveguide of the multilayer packaging integrated substrate.
Claims (5)
1. The millimeter wave ring coupler is characterized in that the millimeter wave hybrid ring coupler is constructed in three layers of media, the bottommost layer is a PMC layer embedded with a mushroom-type EBG array, and the lower surface of the PMC layer is packaged by metal copper; the middle layer is a dielectric plate; the topmost layer is a gap layer; the upper surface of the gap layer is coated with a layer of metal copper, the lower surface of the gap layer is printed with a mixed ring coupling microstrip line, and the mixed ring coupling microstrip line is separated from the PMC layer through a medium plate in the middle layer;
the mixed ring coupling microstrip line is composed of 11 sections of microstrip lines, wherein the microstrip line 1, the microstrip line 2, the microstrip line 3 and the microstrip line 4 are port impedance matching microstrip lines, and the remaining microstrip line 5, the microstrip line 6, the microstrip line 7, the microstrip line 8, the microstrip line 9, the microstrip line 10 and the microstrip line 11 form a two-section type mixed ring;
the two-stage mixing ring structure enhances the bandwidth to 50%; the top layer metal copper of the three-layer dielectric plate structure and the mushroom-shaped EBG array enable quasi-TEM mode waves to be transmitted only in the gap layer to form substrate gap waveguides, and the working frequency band is distributed in the range from 24GHz to 40 GHz.
2. The millimeter wave ring coupler based on multilayer packaging integrated substrate gap waveguide of claim 1, wherein the embedded mushroom type EBG array is characterized in that: through with a plurality of metal via holes of periodic arrangement on the PMC layer, each metal via hole wholly passes the PMC layer, the circular metal paster of tight top of the higher authority, the lower side links to each other with metal copper.
3. The millimeter wave ring coupler based on the multilayer packaging integrated substrate gap waveguide of claim 1, wherein the specific structure of the 11-section hybrid ring coupling microstrip line is as follows: microstrip line 1 is the input port of whole circuit, and the microstrip line that sets up with microstrip line 1 vertically includes: the method comprises the following steps from top to bottom: the microstrip line 2 is used as an output through port, and the microstrip line 5 and the microstrip line 4 are used as output coupling ports; the microstrip line 1 is positioned in the middle of the microstrip line 5;
the microstrip line 2 is vertically connected with the microstrip line 6, the microstrip line 6 is horizontally connected with the microstrip line 9 and is vertically connected with the microstrip line 8; and microstrip line 6 is located at the connection of microstrip lines 8 and 9; the other end of the microstrip line 8 is vertically connected with a microstrip line 7 and a microstrip line 10; and is located at the connection of the microstrip lines 7 and 10; the other end of the microstrip line 7 is positioned at the connection part of the microstrip line 4 and the microstrip line 5; the other end of the microstrip line 10 horizontally connected with the microstrip line 7 is simultaneously and horizontally connected with the microstrip line 3, and the microstrip line 3 is an isolated output port; the microstrip line 11 is vertically connected, and the microstrip line 11 is positioned between the parallel microstrip line 9 and the microstrip line 10; while being connected to the microstrip line 3.
4. The millimeter wave ring coupler based on the multi-layer packaging integrated substrate gap waveguide as claimed in claim 1, wherein the microstrip lines 1-4 are all wave ports with the same width, and the microstrip lines 6, 7, 9 and 10 are all λ/4 branch lines with the same length; microstrip lines 6 and 7 are parallel and have the same size, microstrip lines 9 and 10 are parallel and have the same size, and microstrip lines 5, 8 and 11 are parallel and are all lambda/2 branch lines and have the same length.
5. The millimeter wave ring coupler based on the multi-layer package integrated substrate gap waveguide of claim 1, wherein the millimeter wave ring coupler operates as follows:
when the input port 1 is excited, due to the copper layer above the gap layer and the encapsulation of the mushroom-shaped EBG array below, quasi-TEM mode waves are transmitted in the gap layer along the microstrip line 1, are equally divided into two paths after passing through the microstrip line 5, the signal power of an output through port at the microstrip line 2 is equally divided from the signal power of an output coupling port of the microstrip line 4, and the phases are the same; the waves transmitted along the microstrip lines 6 and 7 pass through the microstrip line 8, and the electromagnetic fields are mutually offset; the isolated output port of the microstrip line 3 is isolated;
when the isolated output port 3 is excited, similarly, due to encapsulation, a quasi-TEM mode wave propagates in the gap layer along the microstrip line 3, is transmitted to the microstrip line 9 through the microstrip line 11, and cancels an electromagnetic field at the microstrip line 8 with a wave transmitted in the microstrip line 10 at the same time; the wave along the microstrip lines 6 and 7 respectively reaches the output straight-through port of the microstrip line 2 and the output coupling port of the microstrip line 4, the signal power is equally divided, the phase difference is 180 degrees, and the signal power is mutually counteracted through the electromagnetic field of the microstrip line 5, so the input port 1 at the microstrip line 1 is isolated;
when the microstrip line-type quasi-TEM mode electromagnetic wave power combiner is used as a power combiner, an output through port of the microstrip line 2 and an output coupling port of the microstrip line 4 are simultaneously excited, similarly, due to packaging, quasi-TEM mode waves propagate in a gap layer along the microstrip lines 2 and 4, a sum of input signals is formed at a port of the microstrip line 1 through the microstrip line 5, waves along the microstrip lines 6 and 7 pass through the microstrip line 8, and electromagnetic fields are mutually counteracted; the isolated output port of the microstrip line 3 forms the difference of the input signals.
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