CN113451139B - Method for carrying out p-type doping on TMDCs based on PTFE and semiconductor - Google Patents
Method for carrying out p-type doping on TMDCs based on PTFE and semiconductor Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/38—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions
- H01L21/385—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
Abstract
The invention discloses a PTFE-based method for p-type doping of TMDCs and a semiconductor, belonging to the technical field of advanced semiconductor devices, wherein the method comprises the following steps: the TMDCs material is transferred to a fluorine-containing ultra-flat PTFE substrate, so that a vertical heterogeneous interface of TMDCs and PTFE is constructed, the interface has efficient hole doping regulation and control on the TMDCs, the change of an energy band structure of the transferred TMDCs is represented by measuring the spectral structure and the fluorescence life of the transferred TMDCs, the p-type doping of the TMDCs can be determined, the p-type doped TMDCs semiconductor is obtained, and the application of the semiconductor in photoelectric or electronic devices is expanded. The invention realizes the conversion of the two-dimensional TMDCs from n-type doping to p-type doping at room temperature, has long-term and stable adjusting effect, is suitable for large-scale production requirements, is simple and convenient to operate, has controllable doping precision of a monoatomic layer, and realizes the hole doping type of the two-dimensional TMDCs through the strong electronegativity effect of fluorine-containing compounds.
Description
Technical Field
The invention relates to the technical field of photoelectric devices, in particular to a method for carrying out p-type doping on TMDCs based on PTFE and a semiconductor.
Background
Two-dimensional transition metal chalcogenides (TMDCs) have proven to have great potential as next generation compound semiconductors that can compete beyond moore's law. They are rich in combinations, possess different crystalline phases and crystal structures, thicknesses and different stacking manners, and most importantly, they have a band gap which is continuously adjustable from a metallic phase to a semiconductor phase. However, two-dimensional transition metal chalcogenides tend to have typical n-type semiconductor characteristics due to their crystal structure which is thermodynamically defective (e.g., sulfur defects, etc.).
Unlike silicon-based materials with mature n-type and p-type doping, the process for preparing p-doped two-dimensional transition metal chalcogenides has not been fully developed, which greatly limits the application of transition metal chalcogenides in multi-polar electronic devices (e.g., p-n junctions), complementary metal oxide semiconductor devices (CMOS), and hetero-bipolar devices (HBT). Therefore, it is very urgent in the field of semiconductor electronic devices to develop a method for efficiently and stably converting an n-type two-dimensional transition metal chalcogenide into a p-type two-dimensional transition metal chalcogenide.
At present, with the continuous and deep scientific research, the role of p-type doping technology in the modification of two-dimensional transition metal chalcogenide is more and more prominent. In recent years, researchers have experimentally constructed p-type doping systems of different types of transition metal chalcogenides and have been validated for performance by electronics, fluorescence spectroscopy, fluorescence lifetime, etc. (Yue Zhang, Nature Communications, 8, 15881 (2017); Robert c. haddon, Nano Letters, 15, 5284 (2015); Ali Javey, Science, 364, 468 (2019); Kazunari Matsuda, Nano Letters, 13, 5944 (2013)).
In many literature reports, p-type doping of two-dimensional transition metal chalcogenide is mostly realized by physical doping of electronic devices, and the process is complex and the cost is high.
In chemical doping, for example, fluorine-containing organic small molecules, since fluorine atoms have strong electron affinity, p-type doping of a two-dimensional transition metal chalcogenide can be achieved through simple experimental operations in the prior art. However, small fluorine-containing molecules are unstable and volatile in the environment, and thus inevitably result in p-type doping of the two-dimensional transition metal chalcogenide being volatile doping. Therefore, the doping method realizes the concept of p-type doping, and the p-type doping efficiency is low, so that the complete conversion of the two-dimensional transition metal chalcogenide from the n-type semiconductor to the p-type semiconductor cannot be completed.
Disclosure of Invention
Aiming at the problems that in the prior art, after a two-dimensional transition metal chalcogenide is doped with fluorine-containing micromolecules in a p-type mode, the efficiency is low and the doping is volatile, the invention aims to provide a method for doping TMDCs in a p-type mode based on PTFE and a semiconductor.
In order to achieve the purpose, the technical scheme of the invention is as follows:
in one aspect, the present invention provides a method for p-doping TMDCs based on PTFE, comprising the steps of,
s1, obtaining TMDCs materials;
s2, transferring the TMDCs material to the surface of an ultra-flat PTFE substrate, or depositing an ultra-flat PTFE film on the TMDCs material through a thermal evaporation method, thereby constructing a vertical heterogeneous interface of PTFE and TMDCs and realizing p-type doping of the TMDCs.
Preferably, in S2, the ultra-flat PTFE substrate is a PTFE sheet or a PTFE film having a surface roughness of 1 to 10 nm.
Preferably, the PTFE sheet having a surface roughness of 1 to 10nm is obtained by:
clamping and fixing a commercial PTFE sheet between two ultra-flat carriers, wherein the surface roughness of the ultra-flat carriers is 0.1-2 nm;
and then softening and remolding the commercial PTFE sheet by a hot pressing method under the conditions that the softening temperature is 200-350 ℃ and the softening time is 10-60min to obtain the PTFE sheet with the surface roughness of 1-10 nm.
Preferably, the PTFE film having a surface roughness of 1 to 10nm is obtained by:
placing PTFE powder in the midstream of a tube furnace, and placing a carrier in the downstream of the tube furnace;
controlling the vacuum degree of the tube furnace to be 1-100 Pa;
and then obtaining the PTFE film with the surface roughness of 1-10nm on the carrier by a thermal evaporation method under the conditions that the flow rate of carrier gas nitrogen is 10-200sccm, the heating temperature of the PTFE powder is 300-700 ℃, the temperature of the carrier is 10-50 ℃ and the thermal evaporation time is 10-60 min.
Preferably, the ultra-flat PTFE substrate is a PTFE thin plate with the surface roughness of 5-7.5nm or a PTFE film with the surface roughness of 3.5-6.5 nm.
Preferably, in S2, before the vertical heterogeneous interface of PTFE and TMDCs is constructed, the method further comprises the following steps:
and placing the ultra-flat PTFE substrate in plasma for plasma treatment, so as to regulate and control the fluorine content of the surface layer of the ultra-flat PTFE substrate.
Preferably, the plasma is hydrogen or nitrogen, the flow rate is 1-2000sccm, the plasma power is 1-5000W, and the reaction time is 1-120 min.
Preferably, the representative structure of the TMDCs material is MXn; wherein M is a metal comprising Mo, W, Pt, Hf, In, Re, Nb, Ta, Ga, Sn, Mn, Co, Zr and alloy compounds thereof; x comprises O, S, Se, Te and alloys thereof and Janus compounds; wherein n is a natural number greater than or equal to 1; wherein the TMDCs material is a single layer or few layers of material obtained by vapor deposition and is transferred to the surface of the ultra-flat PTFE substrate by a wet method.
Preferably, in S2, the step of depositing the ultra-flat PTFE film on the TMDCs material by thermal evaporation comprises:
placing the PTFE powder in the midstream of the tube furnace, and placing the TMDCs material downstream of the tube furnace;
controlling the vacuum degree of the tube furnace to be 1-100 Pa;
and then depositing a PTFE film with the surface roughness of 1-10nm and the thickness of 1-200nm on the TMDCs material by a thermal evaporation method under the conditions that the flow rate of carrier gas nitrogen is 10-200sccm, the heating temperature of the PTFE powder is 350-700 ℃, the temperature of the TMDCs material is 10-50 ℃ and the thermal evaporation time is 10-60 min.
On the other hand, the invention also provides a p-type TMDCs semiconductor obtained based on the method.
The invention has the beneficial effects that:
1. the two-dimensional transition metal chalcogenide is transferred to the fluorine-containing soft substance PTFE substrate, and the PTFE film is controllably thermally evaporated on the two-dimensional transition metal chalcogenide, so that the high-efficiency nonvolatile p-type doped two-dimensional transition metal chalcogenide can be obtained, and the two-dimensional transition metal chalcogenide is directly regulated and controlled from an n-type semiconductor to a p-type semiconductor, and compared with the traditional doping process, the method disclosed by the invention has an obvious effect and long-term stability;
2. the fluorine content on the surface of the PTFE substrate can be adjusted by processing the surface of the PTFE substrate by plasma, so that the continuous regulation of the two-dimensional transition metal chalcogenide on the surface of the PTFE substrate from an n-type semiconductor to a p-type semiconductor is realized, and the fluorine-containing PTFE substrate and the surface modification thereof have diversity and have important significance for expanding the application of the two-dimensional transition metal chalcogenide in the field of semiconductors.
Drawings
FIG. 1 is a flow chart of a method of the present invention;
FIG. 2 is a two-dimensional MoS of the present invention2An energy band structure regulation and control representation chart transferred from a silicon substrate to an ultra-flat PTFE substrate;
FIG. 3 is a two-dimensional MoS in the method of the present invention2A transfer process and a structural representation chart are transferred from a silicon substrate to an ultra-flat PTFE substrate;
FIG. 4 is a surface roughness characterization plot of an ultra-flat PTFE sheet and a silicon wafer used for clamping during its preparation in the method of the present invention;
FIG. 5 is a surface roughness characterization plot of an ultra-flat PTFE membrane in a method of the present invention;
FIG. 6 is a two-dimensional MoS in the method of the present invention2Spectral characterization patterns on a silicon substrate and an ultra-flat PTFE substrate respectively;
FIG. 7 is a two-dimensional MoS in the method of the present invention2Electron transfer mechanism diagram on ultra flat PTFE substrate;
FIG. 8 is a two-dimensional MoS in the method of the present invention2Characterization of fluorescence lifetime and photoluminescence spectra on ultra-flat PTFE substrates surface treated with hydrogen or nitrogen plasma.
Detailed Description
The following description of the embodiments of the present invention will be made with reference to the accompanying drawings. It should be noted that the description of the embodiments is provided to help understanding of the present invention, but the present invention is not limited thereto. In addition, the technical features involved in the respective embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
It should be noted that in the description of the present invention, the terms "upper", "lower", "left", "right", "front", "rear", and the like indicate orientations or positional relationships based on structures shown in the drawings, and are only used for convenience in describing the present invention, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention.
In the technical scheme, the terms "first" and "second" are only used for referring to the same or similar structures or corresponding structures with similar functions, and are not used for ranking the importance of the structures, or comparing the sizes or other meanings.
In addition, unless expressly stated or limited otherwise, the terms "mounted" and "connected" are to be construed broadly, such that a connection may be fixed or removable or integral; can be mechanically or electrically connected; the two structures can be directly connected or indirectly connected through an intermediate medium, and the two structures can be communicated with each other. To those skilled in the art, the specific meanings of the above terms in the present invention can be understood in light of the present general concepts, in connection with the specific context of the scheme.
Example one
A method of p-type doping TMDCs (two-dimensional transition metal chalcogenides) based on PTFE (polytetrafluoroethylene), as shown in fig. 1, includes steps S1 and S2.
In step S1, TMDCs materials are obtained.
Wherein, the representative structure of the TMDCs material is MXn. Wherein M is a metal comprising Mo, W, Pt, Hf, In, Re, Nb, Ta, Ga, Sn, Mn, Co, Zr and alloy compounds thereof. X includes O, S, Se, Te and alloys thereof [ herein alloys refer to compounds composed of chalcogen elements such as MoSxSey, WSxTey, MoxWyS2, etc., which are known as alloy (Zhou, J., Lin, J., Huang, X.et al. A library of atomic metal complexes. Nature 556,355-359(2018), alloy means alloy) and Janus compound (Janus compound means that an atom of one layer is substituted with another chalcogen atom and structurally belongs to TMDCs material.) wherein n is a natural number greater than or equal to 1 TMDCs material in this embodiment is two-dimensional MoS 2.
In addition, the TMDCs materials used are single or few layers of materials deposited on a silicon wafer by vapor deposition, such as chemical vapor deposition, or by other physical growth methods.
Step S2, transferring the TMDCs material to the surface of the ultra-flat PTFE substrate, and constructing a vertical heterogeneous interface between PTFE and TMDCs, i.e., a TMDCs/PTFE interface, to implement p-type doping of TMDCs, as shown in fig. 2.
In particular, the TMDCs material is transferred from the silicon wafer to the surface of the ultra-flat PTFE substrate by a wet process, as shown in FIG. 3, which is a two-dimensional MoS2Transferring process and structure representation diagram from silicon substrate to ultra-flat PTFE substrate, and adopting PMMA wet transfer method to transfer single-layer MoS2The crystals were transferred intact to the ultra-flat PTFE substrate.
Meanwhile, the ultra-flat PTFE substrate referred to in this step is a PTFE sheet or a PTFE film having a surface roughness of 1 to 10nm, such as:
1. when the ultra-flat PTFE substrate is a PTFE sheet with the surface roughness of 1-10nm, the ultra-flat PTFE substrate can be obtained by softening and remolding a commercial PTFE sheet through a hot pressing method, and the method comprises the following specific steps:
firstly, clamping and fixing a commercial PTFE sheet between two ultra-flat carriers, and configuring the ultra-flat carriers with the surface roughness of 0.1-2 nm. Wherein the ultra-flat carrier can be a silicon wafer, a silicon oxide wafer or a silicon dioxide wafer with SiO on the surface2A silicon wafer of a layer, etc., and the present embodiment is configured to have SiO on the surface2Silicon wafer of layer, wherein SiO2The thickness of the layer is 80-350 nm;
and then softening and remolding the commercial PTFE sheet by a hot pressing method under the conditions that the softening temperature is 200-350 ℃ and the softening time is 10-60min to obtain the PTFE sheet with the surface roughness of 1-10 nm.
For example, in this example, a commercial PTFE sheet was sandwiched between two clean silicon wafers 285nm thick and 0.69nm in surface roughness by hot pressing, fixed with a 5# 19mm long tail clamp, and heated and softened at 300 ℃ for 30min to obtain an ultra-flat PTFE sheet with a surface roughness of 4.9nm, as shown in fig. 4.
2. When the ultra-flat PTFE substrate is a PTFE film with the surface roughness of 1-10nm, PTFE powder can be processed by a thermal evaporation method to deposit a required film on a carrier (such as a silicon wafer), and the specific steps comprise:
first a mass (e.g. 50-500mg) of PTFE powder is placed in the midstream of the tube furnace and a support, e.g. a silicon wafer, is placed downstream of the tube furnace;
secondly, controlling the vacuum degree of the tube furnace to be 1-100 Pa;
then, under the conditions that the carrier gas is nitrogen, the flow rate is 10-200sccm, the heating temperature of the PTFE powder is 300-700 ℃, the temperature of the carrier silicon wafer is 10-50 ℃ and the thermal evaporation time is 10-60min, the PTFE film with the surface roughness of 1-10nm can be obtained on the carrier silicon wafer through the thermal evaporation method.
For example, in this example, 100mg of PTFE powder was placed in the midstream of a tube furnace, a silicon wafer was placed in the downstream of the tube furnace, the tube furnace was evacuated to a vacuum degree of 15Pa, nitrogen gas at a flow rate of 100sccm was introduced as a carrier gas, and the PTFE powder was heated and vaporized at 500 ℃ while maintaining the temperature of the silicon wafer at 25 ℃ for 30min, so that an ultra-flat PTFE film having a surface roughness of 4.9nm was produced on the silicon wafer, as shown in fig. 5.
As shown in fig. 6, it is a two-dimensional MoS2Spectral characterization on silicon substrate and ultra-flat PTFE substrate, respectively. By comparing single-layer two-dimensional MoS2On a silicon Substrate (SiO)2Substrate) and ultra-flat PTFE substrate, two-dimensional MoS2After the transfer, the Raman and PL spectra have obvious blue shift, which shows that the two-dimensional MoS2Two-dimensional MoS with strong electronic coupling with ultra-flat PTFE substrate2There is a strong p-type doping. In addition, two-dimensional MoS2The fluorescence lifetime on PTFE is significantly extended, indicating a two-dimensional MoS2The defects are reduced and a built-in electric field is formed between the ultra-flat PTFE substrate and the ultra-flat PTFE substrate.
As shown in fig. 7, it is a two-dimensional MoS2Electron transfer mechanism on ultra flat PTFE substrates. Two-dimensional MoS study by Kelvin probe force microscopy2On a silicon Substrate (SiO)2Substrate) and ultra flat PTFE substrate, results indicate two dimensional MoS2In SiO2On a substrate of n-type semiconductor, and two-dimensional MoS2The p-type semiconductor is arranged on the ultra-flat PTFE substrate, which shows that the two-dimensional MoS is realized2From n-type to p-type.
Therefore, the vertical heterogeneous interface of the PTFE and the TMDCs constructed by the steps can enable fluorine atoms on the ultra-flat PTFE substrate to be efficiently doped into the TMDCs, so that p-type doped TMDCs are obtained, and the doped fluorine atoms have long-term stability.
Example two
The difference from the first embodiment is that: in this embodiment, the ultra-flat PTFE substrate is a PTFE sheet with a surface roughness of 5-7.5nm or a PTFE film with a surface roughness of 3.5-6.5nm, corresponding to:
1. when the ultra-flat PTFE substrate is a PTFE sheet with the surface roughness of 5-7.5nm, the ultra-flat PTFE substrate can be obtained by softening and remolding a commercial PTFE sheet through a hot pressing method, and the specific steps comprise:
firstly, commercial PTFE thin plate is clamped and fixed between two ultra-flat carriers which are the same as the first embodiment except for SiO2The layer thickness is 200-300nm, and the surface roughness is 0.5-0.8 nm;
and then softening and remolding the commercial PTFE sheet by a hot pressing method under the conditions that the softening temperature is 280-320 ℃ and the softening time is 20-40min to obtain the PTFE sheet with the surface roughness of 5-7.5 nm.
2. When the ultra-flat PTFE substrate is a PTFE film with the surface roughness of 3.5-6.5nm, PTFE powder can be processed by a thermal evaporation method to deposit a required film on a carrier (such as a silicon wafer), and the specific steps comprise:
firstly, a certain mass (for example, 80-150mg) of PTFE powder is placed in the midstream of a tube furnace, and a carrier silicon wafer is placed in the downstream of the tube furnace;
secondly, controlling the vacuum degree of the tube furnace to be 10-100 Pa;
then, under the conditions that the carrier gas is nitrogen, the flow rate is 80-150sccm, the heating temperature of the PTFE powder is 450-550 ℃, the temperature of the carrier silicon wafer is 10-50 ℃ and the thermal evaporation time is 10-60min, the PTFE film with the surface roughness of 3.5-6.5nm can be obtained on the carrier silicon wafer through a thermal evaporation method.
EXAMPLE III
The difference from the first or second embodiment is that: before a vertical heterogeneous interface of PTFE and TMDCs is constructed, the ultra-flat PTFE substrate is placed in plasma for plasma treatment, so that the fluorine content of the surface layer of the ultra-flat PTFE substrate is regulated.
Specifically, the plasma is set to be hydrogen or nitrogen in the embodiment, the flow rate is 1-2000sccm, the plasma power is 1-5000W, and the reaction time is 1-120 min.
For example, the PTFE sheet or PTFE film obtained in the first example is subjected to plasma treatment in a hydrogen or nitrogen atmosphere at a gas flow rate of 1sccm for a treatment time of 5min at a plasma power of 10W to control the fluorine content of the PTFE sheet or PTFE film surface layer. It will be appreciated by those skilled in the art that the flow rates, powers and reaction durations described above will vary depending on the size of the PTFE sheet or film and the fluorine content of its surface layer.
As shown in fig. 8, it is a two-dimensional MoS2Characterization of fluorescence lifetime and photoluminescence spectra on ultra-flat PTFE substrates surface treated with hydrogen or nitrogen plasma. Wherein, the fluorine content on the surface of the ultra-flat PTFE substrate can be changed by processing the surface of the ultra-flat PTFE substrate by remote plasma, and the two-dimensional MoS can be effectively regulated and controlled2Electronic coupling to ultra-flat PTFE substrates and two-dimensional MoS on ultra-flat PTFE substrates2The energy band structure of (1).
The arrangement enables the transition of TMDCs as raw materials from n-type to p-type to be continuously adjustable by controlling the p-type doping effect, thereby conveniently obtaining p-type semiconductors applicable to different fields and environments.
Example four
The difference from the first embodiment is that: in step S2, a super-flat PTFE film is deposited on the TMDCs material obtained in step S1 by thermal evaporation to form a perpendicular heterogeneous interface of PTFE and TMDCs, i.e., PTFE/TMDS/SiO2And interface, realizing p-type doping of TMDCs.
In this embodiment, the specific steps of depositing the ultra-flat PTFE film on the TMDCs material by the thermal evaporation method include:
a mass (e.g., 50-500mg) of PTFE powder is first placed in the tube furnace upstream and TMDCs material is placed downstream;
secondly, controlling the vacuum degree of the tube furnace to be 1-100 Pa;
and then depositing the ultra-flat PTFE film with the surface roughness of 1-10nm and the thickness of 1-200nm on the TMDCs material by a thermal evaporation method under the conditions that the flow rate of carrier gas nitrogen is 10-200sccm, the heating temperature of the PTFE powder is 350-700 ℃, the temperature of the TMDCs material is 10-50 ℃ and the thermal evaporation time is 10-60 min.
For example, 100mg of PTFE powder and a silicon wafer grown with TMDCs are respectively placed at the midstream and the downstream of a tube furnace, the tube furnace is vacuumized to the vacuum degree of 15Pa, nitrogen with the flow rate of 100sccm is introduced as carrier gas, the PTFE powder is heated and vaporized at 500 ℃, the temperature of the silicon wafer is 25 ℃, the thermal evaporation time is 30min, the ultra-flat PTFE film with the thickness of 50nm and the surface roughness of 4.9nm can be prepared, and finally, a vertical heterogeneous interface of the PTFE and the TMDCs, namely a PTFE/TMDS/SiO2 interface is constructed, so that the two-dimensional transition metal chalcogenide is converted into the p-type semiconductor.
EXAMPLE five
A p-type TMDCs semiconductor obtained according to the method disclosed in any one of the above embodiments.
The embodiments of the present invention have been described in detail above with reference to the accompanying drawings, but the present invention is not limited to the described embodiments. It will be apparent to those skilled in the art that various changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, and the scope of protection is still within the scope of the invention.
Claims (10)
1. A method for carrying out p-type doping on TMDCs based on PTFE is characterized by comprising the following steps: comprises the following steps of (a) carrying out,
s1, obtaining TMDCs materials;
s2, transferring the TMDCs material to the surface of an ultra-flat PTFE substrate, or depositing an ultra-flat PTFE film on the TMDCs material through a thermal evaporation method, thereby constructing a vertical heterogeneous interface of PTFE and TMDCs and realizing p-type doping of the TMDCs.
2. The method of claim 1, wherein: in S2, the ultra-flat PTFE substrate is a PTFE sheet with a surface roughness of 1-10nm or a PTFE film with a surface roughness of 1-10 nm.
3. The method of claim 2, wherein: the PTFE sheet with the surface roughness of 1-10nm is obtained by the following steps:
clamping and fixing a commercial PTFE sheet between two ultra-flat carriers, wherein the surface roughness of the ultra-flat carriers is 0.1-2 nm;
and then softening and remolding the commercial PTFE sheet by a hot pressing method under the conditions that the softening temperature is 200-350 ℃ and the softening time is 10-60min to obtain the PTFE sheet with the surface roughness of 1-10 nm.
4. The method of claim 2, wherein: the PTFE film with the surface roughness of 1-10nm is obtained by the following steps:
placing PTFE powder in the midstream of a tube furnace, and placing a carrier in the downstream of the tube furnace;
controlling the vacuum degree of the tube furnace to be 1-100 Pa;
and then obtaining the PTFE film with the surface roughness of 1-10nm on the carrier by a thermal evaporation method under the conditions that the flow rate of carrier gas nitrogen is 10-200sccm, the heating temperature of the PTFE powder is 300-700 ℃, the temperature of the carrier is 10-50 ℃ and the thermal evaporation time is 10-60 min.
5. The method of claim 2, wherein: the ultra-flat PTFE substrate is a PTFE thin plate with the surface roughness of 5-7.5nm or a PTFE film with the surface roughness of 3.5-6.5 nm.
6. The method of claim 1, wherein: in S2, before constructing the perpendicular heterogeneous interface of PTFE and TMDCs, the method further comprises the steps of:
and placing the ultra-flat PTFE substrate in plasma for plasma treatment, so as to regulate and control the fluorine content of the surface layer of the ultra-flat PTFE substrate.
7. The method of claim 6, wherein: the plasma is hydrogen or nitrogen, the flow rate is 1-2000sccm, the plasma power is 1-5000W, and the reaction time is 1-120 min.
8. The method of claim 1, wherein: the representative structure of the TMDCs material is MXn; wherein M is a metal comprising Mo, W, Pt, Hf, In, Re, Nb, Ta, Ga, Sn, Mn, Co, Zr and alloy compounds thereof; x comprises O, S, Se, Te and alloys thereof and Janus compounds; wherein n is a natural number greater than or equal to 1; wherein the TMDCs material is a single layer or few layers of material obtained by vapor deposition and is transferred to the surface of the ultra-flat PTFE substrate by a wet method.
9. The method of claim 1, wherein: in S2, the step of depositing the ultra-flat PTFE film on the TMDCs material by thermal evaporation comprises:
placing the PTFE powder in the midstream of the tube furnace, and placing the TMDCs material downstream of the tube furnace;
controlling the vacuum degree of the tube furnace to be 1-100 Pa;
and then depositing a PTFE film with the surface roughness of 1-10nm and the thickness of 1-200nm on the TMDCs material by a thermal evaporation method under the conditions that the flow rate of carrier gas nitrogen is 10-200sccm, the heating temperature of the PTFE powder is 350-700 ℃, the temperature of the TMDCs material is 10-50 ℃ and the thermal evaporation time is 10-60 min.
10. A p-type TMDCs semiconductor obtained according to the method of any one of claims 1 to 9.
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