CN113448185B - Developing solution composition used in silicon-based OLED (organic light emitting diode) manufacturing process - Google Patents
Developing solution composition used in silicon-based OLED (organic light emitting diode) manufacturing process Download PDFInfo
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 25
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 25
- 239000010703 silicon Substances 0.000 title claims abstract description 25
- 239000000203 mixture Substances 0.000 title claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 title abstract description 7
- 239000004094 surface-active agent Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 19
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 16
- -1 polyoxyethylene Polymers 0.000 claims description 15
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 11
- 238000003756 stirring Methods 0.000 claims description 11
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 10
- 239000011737 fluorine Substances 0.000 claims description 10
- 229910052731 fluorine Inorganic materials 0.000 claims description 10
- 125000000623 heterocyclic group Chemical group 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 150000007529 inorganic bases Chemical class 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 239000002736 nonionic surfactant Substances 0.000 claims description 8
- 239000003960 organic solvent Substances 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- DMAXMXPDVWTIRV-UHFFFAOYSA-N 2-(2-phenylethyl)phenol Chemical group OC1=CC=CC=C1CCC1=CC=CC=C1 DMAXMXPDVWTIRV-UHFFFAOYSA-N 0.000 claims description 4
- 239000003921 oil Substances 0.000 claims description 4
- 238000001914 filtration Methods 0.000 claims description 3
- 239000011148 porous material Substances 0.000 claims 1
- 238000002360 preparation method Methods 0.000 abstract description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- 230000000694 effects Effects 0.000 description 5
- 238000011161 development Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000013329 compounding Methods 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- DTPCFIHYWYONMD-UHFFFAOYSA-N decaethylene glycol Polymers OCCOCCOCCOCCOCCOCCOCCOCCOCCOCCO DTPCFIHYWYONMD-UHFFFAOYSA-N 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D29/00—Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups B01D24/00 - B01D27/00; Filtering elements therefor
- B01D29/11—Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups B01D24/00 - B01D27/00; Filtering elements therefor with bag, cage, hose, tube, sleeve or like filtering elements
- B01D29/13—Supported filter elements
- B01D29/15—Supported filter elements arranged for inward flow filtration
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D29/00—Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups B01D24/00 - B01D27/00; Filtering elements therefor
- B01D29/50—Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups B01D24/00 - B01D27/00; Filtering elements therefor with multiple filtering elements, characterised by their mutual disposition
- B01D29/56—Filters with filtering elements stationary during filtration, e.g. pressure or suction filters, not covered by groups B01D24/00 - B01D27/00; Filtering elements therefor with multiple filtering elements, characterised by their mutual disposition in series connection
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention aims to provide a developing solution composition used in a silicon-based OLED (organic light emitting diode) manufacturing process and a preparation method thereof.
Description
Technical Field
The invention relates to the field of silicon-based OLED manufacturing, in particular to a developing solution composition used in a silicon-based OLED manufacturing process and a preparation method thereof.
Background
Silicon-based Organic Light Emitting Semiconductors (OLEDs) are used as a technical branch of Display technology, and single crystal silicon wafers (wafers) are used as substrates, so that the OLED Display has the characteristics of self-luminescence, thin thickness, light weight, large viewing angle, short response time, high luminous efficiency and the like, and is easy to realize excellent characteristics such as high PPI, small volume, portability, low power consumption and the like.
With the spread of 4k and 8k technologies, the pixel density (Pixels Per inc, PPI) of silicon-based OLEDs is increasing. The PPI of IPhone12 is about 400-500, while the PPI of current silicon-based OLEDs can be as high as 5000 or more. Therefore, higher and stricter requirements are put on the process in the aspect of fineness, and in addition, the silicon-based materials are different from the traditional display taking glass as a substrate and the flexible display taking polyimide or polyester film as a substrate, so that the developing solution used in the traditional process is difficult to meet the process requirements of the silicon-based OLED. In particular, for the developing solution, the conventional KOH system developing solution is not suitable for silicon-based materials and is easy to have undercut phenomenon (Under Cut), and the dispersion stability of the surfactant commonly used in the KOH system developing solution does not meet the technical requirement of high PPI fineness of the product.
Disclosure of Invention
The invention aims to provide a developing solution composition used in a silicon-based OLED (organic light emitting diode) manufacturing process and a preparation method thereof, wherein the developing solution is prepared by compounding a specific fluorine-containing heterocyclic surfactant component and a nonionic surfactant, so that the obtained developing solution is high in permeability and uniform in dispersity, can quickly and effectively obtain a high-resolution pattern, has few excellent dispersible residues on particles after a photoresist reaction, and cannot corrode a silicon-based material and an electrode material in a specific alkaline range.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention aims to provide a fluorine-containing heterocyclic surfactant, which has a structural formula shown as the following formula;
the unique C-F bond in the molecular structure of the fluorine-containing heterocyclic surfactant has extremely strong hydrophobicity and lower molecular cohesion, so that high surface activity can be generated, the surface tension of the system is greatly reduced, and the technical requirement of high PPI of the silicon-based OLED can be met; the amine-containing heterocyclic structure is beneficial to the stability of an alkaline system of a developing solution.
The invention also aims to provide a developing solution composition used in the manufacturing process of the silicon-based OLED, which comprises the following components in percentage by mass as 100 percent:
in the developing solution for the silicon-based OLED process, the inorganic base is Na 2 CO 3 、NaHCO 3 、K 2 CO 3 、KHCO 3 One or more of them. The inorganic base has lower alkalinity, keeps the pH value of a developing solution system to be stable within 10.1 +/-0.2 when reacting with the photoresist, and greatly helps to the fineness and the uniformity of products.
In the developing solution for the silicon-based OLED process, the organic solvent is 1, 3-diyl-2-imidazolidinone (DMI), the solvent is a polar solvent, organic soluble salts generated after the reaction of the photoresist and alkaline substances can be dissolved in a water-based system, and residues are effectively reduced.
In the developing solution for fabricating the silicon-based OLED, the nonionic surfactant is a phenylethylphenol polyoxyethylene oil ether surfactant, and specifically may be styrylphenol polyoxyethylene (10) ether, styrylphenol polyoxyethylene (12) ether, styrylphenol polyoxyethylene (14) ether, and styrylphenol polyoxyethylene (16) ether. The surfactant has strong emulsibility and good uniformity when reacting with photoresist, and the obtained pattern has neat and smooth edges.
In the developing solution for the silicon-based OLED process, the water can be deionized water, and the resistivity of the developing solution is not lower than 18 MOmega at 25 ℃.
The preparation method of the developing solution used in the silicon-based OLED process comprises the following steps: adding deionized water into a stirring kettle at normal temperature, sequentially adding inorganic base, organic solvent, nonionic surfactant and fluorine-containing heterocyclic surfactant at the rotating speed of 120r/m, stirring after adding each material until the system is clear, and adding the next material; and after all the components are added, stirring for 30 minutes, and filtering by two filter elements with the aperture of 2 mu m and the aperture of 0.5 mu m in sequence to obtain the developing solution.
The developing solution for the silicon-based OLED process has the remarkable advantages that: under the condition of weak base, the requirements of the developing solution on a high PPI process can be improved by compounding the phenethyl phenol polyoxyethylene oil ether surfactant with strong emulsibility and excellent uniformity and the fluorine-containing heterocyclic surfactant with high surface activity, and meanwhile, the water solubility of salts generated after the photoresist reaction is enhanced by adding the organic solvent, so that the generation of residues is effectively reduced.
Detailed Description
The experimental procedures used in the following examples are all conventional procedures unless otherwise specified.
Materials, reagents and the like used in the following examples are commercially available unless otherwise specified.
The invention is further illustrated by the following examples, which are not intended to limit the scope of the invention.
Examples and comparative examples
The developing solution for the silicon-based OLED process is prepared according to the formula shown in the table 1, and the specific preparation method comprises the steps of adding deionized water into a stirring kettle at normal temperature, sequentially adding inorganic base, organic solvent, nonionic surfactant and fluorine-containing heterocyclic surfactant at the rotating speed of 120r/m, stirring each material after adding until the system is clear, and adding the next material. After all the components are added, stirring for 30 minutes, and filtering by filter elements with the aperture of 2 mu m and 0.5 mu m in sequence.
TABLE 1 dosage table of each component of developing solution for silicon-based OLED process
Determination of performance of developing solution for silicon-based OLED (organic light emitting diode) process
The developer compositions prepared in the examples and the comparative examples are evaluated for performance, and the specific test method comprises the following steps:
first, optical microscope detection
Taking blue photoresist as an example: spin-coating a layer of 0.5 mu m negative blue photoresist film on a cleaned silicon wafer with a sample piece of 2cm multiplied by 2cm at the rotating speed of 450r/min, removing part of solvent through reduced pressure vacuum drying, curing for 150s in an oven at the temperature of 100 ℃, and transferring a mask plate pattern with a specific line width to the sample piece through an exposure machine, thereby obtaining the blue photoresist sample piece with the thickness of 0.5 mu m.
Diluting the developing solution to the process set concentration, adjusting the temperature to 23 ℃, spraying the developing solution on a sample sheet with the rotating speed of 60r/min in a swinging mode at a fixed pressure, spraying and developing for 80s, then rinsing with high-purity water, drying with nitrogen, and drying for 30min after a 130 ℃ oven. Observation under a microscope:
1. whether the developed pattern is clear or not;
2. the pattern edge has no undercut phenomenon;
3. whether the development is insufficient or not exists, and photoresist residue exists;
4. whether corrosion exists on the silicon wafer or not;
secondly, temperature stability:
10mL of developing solutions with different formulas are respectively filled in test tubes, a mercury thermometer is added, then the test tubes are uniformly placed in a water bath kettle, and the test tubes are slowly heated. Stopping heating when the developing solution is turbid or layered, and recording the related temperature for the following benchmark evaluation:
○：＞42℃
△：35～42℃
×：＜35℃
thirdly, dispersion stability:
and scraping the photoresist on the sample piece after the vacuum decompression drying process, and collecting the photoresist. 50g of developing solutions with different formulas are respectively taken in a conical flask, and 1g of color photoresist powder collected before is respectively added. After stirring magnetically for 10 minutes, the mixture was filtered through a 1 μm filter paper, and the filter paper was dried at 110 ℃ for 1 hour. Weights were weighed and evaluated on the following basis:
o: net weight < 25mg
X: net weight > 25mg
The test results are shown in table 2.
TABLE 2 cleaning agent Performance test results after thinning and polishing
As can be seen from the examples and comparative examples, the selection and amount of the nonionic surfactant are critical to the development effect; if the high surface activity of the fluorine-containing surfactant is not available, the requirement of high definition is difficult to achieve; DMI has good effect on improving the solubility of photoresist residues after development; too strong an inorganic or organic base can result in a system pH > 12, which is detrimental to both development performance and system stability. If the proportion range of the surfactant exceeds the set range, the stability is affected, and under extreme conditions, the surfactant is unstable even at normal temperature and the product cost is increased; the surfactant does not reach the set range, which causes incomplete reaction of the developer and the surfactant, thereby causing a series of support defects.
The above description is only a preferred embodiment of the present invention, and not intended to limit the scope of the claims, and all equivalent component changes that can be directly or indirectly applied to other related technical fields using the content of the present invention are also included in the scope of the present invention.
Claims (7)
1. A developing solution composition for silicon-based OLED process is characterized in that: the composition comprises the following components in percentage by mass:
5% -20% of inorganic base;
5% -10% of organic solvent;
10% -25% of a nonionic surfactant;
1% -3% of a fluorine-containing heterocyclic surfactant;
45% -70% of deionized water;
the sum of the total mass fraction is 100 percent;
the fluorine-containing heterocyclic surfactant has the structural formula:
the nonionic surfactant is a phenethyl phenol polyoxyethylene oil ether surfactant; the inorganic base is selected from Na 2 CO 3 、NaHCO 3 、K 2 CO 3 、KHCO 3 One or more of the above; the organic solvent is 1, 3-diyl-2-imidazolidinone.
2. The developer composition of claim 1, wherein: wherein the phenethyl phenol polyoxyethylene oil ether surfactant is any one of styryl phenol polyoxyethylene ether-10, styryl phenol polyoxyethylene ether-12, styryl phenol polyoxyethylene ether-14 and styryl phenol polyoxyethylene ether-16.
3. The developer composition of claim 1, wherein: the inorganic base adjustment developer composition system has a stable pH of 10.1 +/-0.2.
4. The developer composition of claim 1, wherein:
the deionized water has a resistivity of not less than 18M omega at 25 ℃.
5. A method for preparing the developer composition for silicon-based OLED process as claimed in any one of claims 1-4, wherein: adding deionized water into a stirring kettle at normal temperature, sequentially adding inorganic base, organic solvent, nonionic surfactant and fluorine-containing heterocyclic surfactant, adding each material, stirring until the system is clear, and adding the next material; and after all the materials are added, stirring for 30 minutes, and filtering by two filter elements in sequence to obtain the developing solution.
6. The method of claim 5, wherein: the rotating speed in the stirring kettle is 120 r/m.
7. The method of claim 5, wherein: of the two filter elements
The pore diameters were 2 μm and 0.5. mu.m, respectively.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110832614.6A CN113448185B (en) | 2021-07-22 | 2021-07-22 | Developing solution composition used in silicon-based OLED (organic light emitting diode) manufacturing process |
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| CN202110832614.6A CN113448185B (en) | 2021-07-22 | 2021-07-22 | Developing solution composition used in silicon-based OLED (organic light emitting diode) manufacturing process |
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| TW200521625A (en) * | 2003-12-30 | 2005-07-01 | Dongwoo Fine Chem Co Ltd | Low foaming developer for radiation sensitive compositiom |
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