CN113437178A - 一种选择性激光烧结制备太阳能电池金属化电极的方法 - Google Patents
一种选择性激光烧结制备太阳能电池金属化电极的方法 Download PDFInfo
- Publication number
- CN113437178A CN113437178A CN202110589145.XA CN202110589145A CN113437178A CN 113437178 A CN113437178 A CN 113437178A CN 202110589145 A CN202110589145 A CN 202110589145A CN 113437178 A CN113437178 A CN 113437178A
- Authority
- CN
- China
- Prior art keywords
- laser
- metal electrode
- electrode
- solar cell
- sintering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000000110 selective laser sintering Methods 0.000 title claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 77
- 239000002184 metal Substances 0.000 claims abstract description 77
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 11
- 238000007639 printing Methods 0.000 claims abstract description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 17
- 229910052709 silver Inorganic materials 0.000 claims description 17
- 239000004332 silver Substances 0.000 claims description 17
- 239000000835 fiber Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- -1 silver-aluminum Chemical compound 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 10
- 238000005265 energy consumption Methods 0.000 abstract description 4
- 238000002360 preparation method Methods 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 238000005245 sintering Methods 0.000 description 27
- 238000010438 heat treatment Methods 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000000149 argon plasma sintering Methods 0.000 description 8
- 238000002844 melting Methods 0.000 description 8
- 230000008018 melting Effects 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 238000007650 screen-printing Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 238000007711 solidification Methods 0.000 description 5
- 230000008023 solidification Effects 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 238000001723 curing Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
工艺 | Voc(mV) | Isc(A) | FF(%) | Eff(%) |
对比例1 | 689.8 | 11.245 | 81.74 | 23.13 |
实施例1 | 691.2 | 11.269 | 81.49 | 23.15 |
实施例2 | 690.8 | 11.273 | 81.46 | 23.14 |
实施例3 | 691.3 | 11.271 | 81.59 | 23.19 |
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110589145.XA CN113437178A (zh) | 2021-05-28 | 2021-05-28 | 一种选择性激光烧结制备太阳能电池金属化电极的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110589145.XA CN113437178A (zh) | 2021-05-28 | 2021-05-28 | 一种选择性激光烧结制备太阳能电池金属化电极的方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN113437178A true CN113437178A (zh) | 2021-09-24 |
Family
ID=77803084
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110589145.XA Pending CN113437178A (zh) | 2021-05-28 | 2021-05-28 | 一种选择性激光烧结制备太阳能电池金属化电极的方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN113437178A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114927599A (zh) * | 2022-05-18 | 2022-08-19 | 东方日升(常州)新能源有限公司 | 一种太阳能电池及其制备方法以及激光退火装置 |
CN116722079A (zh) * | 2023-08-09 | 2023-09-08 | 浙江晶科能源有限公司 | 太阳能电池的制造方法、太阳能电池及光伏组件 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20140124713A1 (en) * | 2011-03-29 | 2014-05-08 | Diptarka Majumdar | High-aspect ratio screen printable thick film paste compositions containing wax thixotropes |
CN108878591A (zh) * | 2018-07-02 | 2018-11-23 | 通威太阳能(安徽)有限公司 | 一种晶硅太阳能电池金属电极的激光烧结方法 |
CN111554755A (zh) * | 2020-03-27 | 2020-08-18 | 天津爱旭太阳能科技有限公司 | 一种太阳能电池电极金属化的方法 |
CN112133767A (zh) * | 2019-06-24 | 2020-12-25 | 泰州隆基乐叶光伏科技有限公司 | 太阳能电池及其制作方法 |
-
2021
- 2021-05-28 CN CN202110589145.XA patent/CN113437178A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20140124713A1 (en) * | 2011-03-29 | 2014-05-08 | Diptarka Majumdar | High-aspect ratio screen printable thick film paste compositions containing wax thixotropes |
CN108878591A (zh) * | 2018-07-02 | 2018-11-23 | 通威太阳能(安徽)有限公司 | 一种晶硅太阳能电池金属电极的激光烧结方法 |
CN112133767A (zh) * | 2019-06-24 | 2020-12-25 | 泰州隆基乐叶光伏科技有限公司 | 太阳能电池及其制作方法 |
CN111554755A (zh) * | 2020-03-27 | 2020-08-18 | 天津爱旭太阳能科技有限公司 | 一种太阳能电池电极金属化的方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114927599A (zh) * | 2022-05-18 | 2022-08-19 | 东方日升(常州)新能源有限公司 | 一种太阳能电池及其制备方法以及激光退火装置 |
CN116722079A (zh) * | 2023-08-09 | 2023-09-08 | 浙江晶科能源有限公司 | 太阳能电池的制造方法、太阳能电池及光伏组件 |
CN116722079B (zh) * | 2023-08-09 | 2024-05-28 | 浙江晶科能源有限公司 | 太阳能电池的制造方法、太阳能电池及光伏组件 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN113437178A (zh) | 一种选择性激光烧结制备太阳能电池金属化电极的方法 | |
JP2012514342A (ja) | 太陽電池用レーザ焼成装置及び太陽電池の製造方法 | |
US11393944B2 (en) | Method for improving ohmic contact behaviour between a contact grid and an emitter layer of a silicon solar cell | |
CN102763223A (zh) | 将全背面电场和银主栅线施加到太阳能电池上的方法 | |
ES2471568A1 (es) | Procedimiento para la creación de contactos eléctricos y contactos as� creados | |
CN112259621A (zh) | 一种高效perc太阳能电池及其制备方法 | |
KR20120120412A (ko) | 태양전지 및 그 제조방법 | |
CN104617164A (zh) | 纳米硅硼浆及其应用于制备太阳能电池的方法 | |
CN101540349A (zh) | 一种晶体硅太阳电池铝背场二次烧结工艺 | |
EP4376104A1 (en) | Method for manufacturing a solar cell and solar cell thereof | |
CN107946381A (zh) | 太阳能电池电极的制备方法 | |
KR101370126B1 (ko) | 탑햇 형태의 레이저 어닐링을 이용한 태양전지의 선택적에미터 형성방법 및 이를 이용한 태양전지의 제조방법 | |
US20050087226A1 (en) | Electrode arranging method | |
CN102263164A (zh) | 硅太阳能电池金属半导体接触合金化制备工艺 | |
CN105702805A (zh) | 高效钝化低价格硅材料缺陷和杂质的激光增强氢气钝化方法及应用 | |
US20150287850A1 (en) | Solar Cell and Method for Manufacturing | |
CN111554755A (zh) | 一种太阳能电池电极金属化的方法 | |
CN116705903A (zh) | 一种晶硅太阳能电池激光烧结的方法 | |
CN111341877B (zh) | 双面perc电池的制备方法 | |
CN105679653B (zh) | 硫硅半导体合金叠层太阳能电池的制作方法 | |
CN113782641B (zh) | 太阳能电池的制备工艺 | |
CN104681664B (zh) | 太阳能电池生产方法 | |
CN103339746A (zh) | 用于制造太阳能电池上的导电接触部的方法及太阳能电池 | |
CN117393654B (zh) | 光伏电池制备方法和光伏电池 | |
CN109728109A (zh) | 晶体硅双面电池及该晶体硅双面电池的热处理方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20230119 Address after: 518000 Room 103, Building 3, Shekou Lanyuan, Nanshan District, Shenzhen, Guangdong Province Applicant after: Ou Wenkai Address before: 221399 room 1222, office building, No.11 Zhujiang East Road, Xuzhou high tech Industrial Development Zone, Jiangsu Province Applicant before: Pule new energy technology (Xuzhou) Co.,Ltd. |
|
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20230404 Address after: No. 168, West Side of Kechuang Road, High-tech Industrial Development Zone, Taixing City, Taizhou City, Jiangsu Province, 225400 Applicant after: Pule New Energy Technology (Taixing) Co.,Ltd. Address before: 518000 Room 103, Building 3, Shekou Lanyuan, Nanshan District, Shenzhen, Guangdong Province Applicant before: Ou Wenkai |
|
TA01 | Transfer of patent application right |