CN113436950A - Cathode electron enhancing device of X-ray bulb tube - Google Patents
Cathode electron enhancing device of X-ray bulb tube Download PDFInfo
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- CN113436950A CN113436950A CN202110520485.7A CN202110520485A CN113436950A CN 113436950 A CN113436950 A CN 113436950A CN 202110520485 A CN202110520485 A CN 202110520485A CN 113436950 A CN113436950 A CN 113436950A
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- 239000010409 thin film Substances 0.000 claims abstract description 43
- 239000010408 film Substances 0.000 claims abstract description 19
- 239000003990 capacitor Substances 0.000 claims description 60
- 239000011248 coating agent Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 229910003460 diamond Inorganic materials 0.000 claims description 6
- 239000010432 diamond Substances 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 238000005984 hydrogenation reaction Methods 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 abstract description 9
- 238000004846 x-ray emission Methods 0.000 abstract description 7
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- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J35/00—X-ray tubes
- H01J35/02—Details
- H01J35/04—Electrodes ; Mutual position thereof; Constructional adaptations therefor
- H01J35/06—Cathodes
- H01J35/065—Field emission, photo emission or secondary emission cathodes
Abstract
The invention discloses an X-ray bulb tube cathode electron enhancing device, which relates to the technical field of X-ray bulbs and comprises a cathode, an anode and an alternating current power supply, wherein one end of the alternating current power supply is grounded, two ends of the cathode are connected with the alternating current power supply, the anode is arranged opposite to the cathode, the invention also comprises a film window, an electrode pair and a voltage element, and the film window is arranged between the anode and the cathode; each electrode pair comprises two electrodes, the two electrodes of each electrode pair are arranged on two sides of the thin film window, and the two electrodes of each electrode pair are respectively connected to the voltage element; the thin film window, the electrode pair and the voltage element constitute a secondary electron emission source. The invention can prolong the service life of the cathode filament, and simultaneously avoid electric breakdown when the X-ray emission is rapidly switched and cut off.
Description
Technical Field
The invention relates to the technical field of X-ray bulbs, in particular to an electronic enhancement device for a cathode of an X-ray bulb.
Background
The cathode assembly of a conventional X-ray tube generally employs a hot cathode, and its specific structure is shown in fig. 4. One end of a filament serving as a cathode is connected to a high-voltage ground of-70 kV, and the other end of the filament is connected with an alternating current power supply of 5-12V. The filament is heated by power supply to reach about 1900-2600 ℃, so that electrons are emitted. The anode was applied with a high voltage of 70kV, and a high voltage electric field was formed between the anode and the cathode. Electrons emitted from the cathode bombard the anode under the acceleration of a high-voltage electric field to generate X-rays. Grids are arranged on two sides of the filament and used for controlling the size and the position of a focus of an electron beam and quickly realizing the functions of switching (Switch) and cutting-Off (Cut-Off) of X-ray emission.
"switching" refers to increasing or decreasing the number of hot electrons striking the anode, thereby increasing or decreasing the intensity of the X-ray emission from the anode. When the capacitor is negative voltage of-10-0 kV relative to high voltage ground, the voltage of the grid is lower than that of the filament, and one end of the grid, which is close to the anode, generates repulsive force to hot electrons emitted by the filament to inhibit the electrons from leaving the cathode region. Thus, the lower the voltage provided by the capacitor, the fewer the number of electrons reaching the anode and the weaker the X-rays that can be emitted by the anode. Conversely, if the capacitance is a positive voltage of 0-10 kV relative to the high voltage ground, the grid will force electrons away from the cathode and toward the anode, enhancing the X-ray emission of the anode. In the process, the voltage at two ends of the filament is only 5-12V and is far lower than the voltage of the capacitor, so that the voltage can be ignored. "cut" means to cut off the electron beam current striking the anode, causing the anode to stop emitting X-rays. When the voltage of the capacitor is low enough (-10 to-5 kV), the electrons emitted by the filament are blocked near the cathode by a strong repulsive force, and cannot bombard the anode to generate X-rays.
Because the switching and the cutting are realized by regulating the voltage of the grid, and the voltage regulation speed is very high, the switching and the cutting can be realized quickly, thereby overcoming the defect that the temperature of the filament is increased or reduced very slowly when the electron emission quantity is regulated based on the temperature regulation. However, in order to provide the high electric field required to achieve "switching" and "switching off", the grid must be placed within 5mm of the filament and the voltage across it must be as high as kilovolts (-10 kV), and the electric field between the grid and the filament may well exceed the dielectric strength of the vacuum, resulting in the occurrence of an electrical breakdown phenomenon (commonly referred to as a "sparking" problem). On the other hand, in order to emit a sufficient amount of thermal electrons, the temperature of the filament must be high, which results in rapid evaporation of metallic tungsten, thereby greatly reducing the life of the filament.
Accordingly, those skilled in the art have endeavored to provide an electron enhancing device for cathode of X-ray tube to prolong the service life of the filament while avoiding the occurrence of electrical breakdown.
Disclosure of Invention
In view of the defects in the prior art, the present invention provides an electron enhancing device for cathode of X-ray tube, which can prolong the service life of the cathode filament and avoid the electric breakdown phenomenon.
In order to achieve the above object, the present invention provides an X-ray tube cathode electron enhancing device, comprising a cathode, an anode, an ac power supply, wherein one end of the ac power supply is grounded, two ends of the cathode are connected to the ac power supply, the anode is disposed opposite to the cathode, and the device is characterized by further comprising a thin film window, an electrode pair, and a voltage element, wherein the thin film window is disposed between the anode and the cathode; each electrode pair comprises two electrodes, the two electrodes of each electrode pair are arranged on two sides of the thin film window, and the two electrodes of each electrode pair are respectively connected to the voltage element; the thin film window, the electrode pair and the voltage element constitute a secondary electron emission source.
Preferably, the voltage element comprises a pair of capacitors, each pair of capacitors comprises two capacitors connected in series, and the second end of each pair of capacitors is grounded; the capacitor pairs correspond to the electrode pairs in a one-to-one manner, electrodes of the electrode pairs, which are positioned on one side of the anode, are connected to the first ends of the capacitor pairs, and electrodes of the electrode pairs, which are positioned on one side of the cathode, are connected between two capacitors of the capacitor pairs.
Preferably, the material of the thin film window is diamond.
Further, a metal coating is coated on the surface of one side, facing the cathode, of the film window, and the surface of one side, facing the anode, of the film window is subjected to hydrogenation treatment.
Preferably, the material of the metal coating is one of zinc, copper and gold.
Preferably, the cross-sectional shape of the film window is one of rectangular, oval, trapezoidal, i-shaped, zigzag, and S-shaped.
The thin film window is arranged on the substrate, the grid electrode is arranged on two sides of the thin film window, the grid electrode is connected with a first end of the grid electrode capacitor, and a second end of the grid electrode capacitor is connected with a first end of the capacitor pair.
Preferably, the shape of the grid is one of an arc shape, a long strip shape and a circular ring shape.
Further, the secondary electron emission source is disposed between the cathode and the anode in stages, and a second end of a capacitor pair of the secondary electron emission source of a subsequent stage is connected to a first end of a capacitor pair of the secondary electron emission source of a previous stage.
Further, the gate electrode is provided in combination with the secondary electron emission source.
The invention has at least the following beneficial technical effects:
1. according to the cathode electron enhancement device of the X-ray bulb tube, the secondary electron emission source is introduced into the X-ray bulb tube, cathode electron enhancement is achieved, the electron emission burden of the filament is relieved, the working temperature of the filament is reduced, and the service life of the filament is prolonged; the operating requirements for the primary electron emission source are further reduced by the multi-stage electron enhancement method.
2. According to the cathode electron enhancing device for the X-ray bulb tube, provided by the invention, the electrode pairs are arranged on two sides of the diamond film window to generate bias voltage, so that the escape number of secondary electrons is regulated, and the emission intensity of X-rays is further controlled. The combined structure of the film window, the electrode pair and the grid can replace and effectively avoid the occurrence of electric breakdown phenomenon when realizing the focus control of electron beam and the quick switching-over and switching-off of X-ray emission due to the conventional grid structure.
The conception, the specific structure and the technical effects of the present invention will be further described with reference to the accompanying drawings to fully understand the objects, the features and the effects of the present invention.
Drawings
FIG. 1 is a schematic diagram of electron enhancement of an X-ray tube cathode of example 1 of the present invention;
FIG. 2 is a schematic diagram of electron enhancement and regulation of an X-ray tube cathode in accordance with example 2 of the present invention;
FIG. 3 is a schematic diagram of the electron secondary enhancement of the cathode of the X-ray tube in accordance with embodiment 3 of the present invention;
fig. 4 is a structural view of a hot cathode of a conventional X-ray tube.
The device comprises a power supply, a capacitor, a first capacitor, a second capacitor, a 3-alternating current power supply, a cathode, a grid, a 6-primary electron beam, an anode, a thin film window, a 9-electrode pair, a metal coating, a hydrogenated surface, a secondary electron beam and a grid capacitor, wherein the power supply comprises 1-a grounding end, 2-a capacitor pair, 21-a first capacitor, 22-a second capacitor, a 3-alternating current power supply, a 4-cathode, a 5-grid, a 6-primary electron beam, a 7-anode, an 8-thin film window, a 9-electrode pair, a 10-metal coating, an 11-hydrogenated surface, a 12-secondary electron beam and a 13-grid capacitor.
Detailed Description
The technical contents of the preferred embodiments of the present invention will be more clearly and easily understood by referring to the drawings attached to the specification. The present invention may be embodied in many different forms of embodiments and the scope of the invention is not limited to the embodiments set forth herein.
In the drawings, structurally identical elements are represented by like reference numerals, and structurally or functionally similar elements are represented by like reference numerals throughout the several views. The size and thickness of each component shown in the drawings are arbitrarily illustrated, and the present invention is not limited to the size and thickness of each component. The thickness of the components may be exaggerated where appropriate in the figures to improve clarity.
Example 1
As shown in fig. 1, the cathode electron enhancing apparatus of the X-ray tube of the present embodiment includes a ground terminal 1, an ac power supply 3, a cathode 4, and an anode 7, wherein the ground terminal 1 is a high voltage ground of-70 kV, the ac power supply 3 is a low voltage power supply of 5-12V, one end of the ac power supply 3 is connected to the ground terminal 1, two ends of the cathode 4 are connected to the ac power supply 3, and the anode 7 is disposed opposite to the cathode 4. The thin film window 8 is arranged between the cathode 4 and the anode 7, the electrode pair 9 is arranged on two sides of the thin film window 8, the electrode pair 9 is powered by the capacitor pair 2, and the thin film window 8, the electrode pair 9 and the capacitor pair 2 form a secondary electron emission source. The capacitor pair 2 includes two capacitors connected in series, which are a first capacitor 21 and a second capacitor 22, respectively, and one end of the second capacitor 22 is connected to the ground terminal 1. The electrode of the electrode pair 9 facing the anode 7 is connected to a first capacitor 21, the electrode of the electrode pair 9 facing the cathode 4 is connected between the first capacitor 21 and a second capacitor 22, the first capacitor 21 generates a bias voltage of-500V for controlling the emission of secondary electrons, and the second capacitor 22 provides a high voltage of 0-30 kV between the cathode 4 and the thin film window 8. The potential of the anode 7 was 70kV and a high voltage electric field was also formed between the thin film window 8 and the anode 7. The primary electron beam current 6 emitted by the cathode 4 bombards the thin film window 8 under the acceleration of the electric field between the cathode 4 and the thin film window 8, and a secondary electron beam current 12 is generated. The secondary electron beam 12 then bombards the anode 7, emitting X-rays, under acceleration of the electric field between the thin film window 8 and the anode 7.
The material of the film window 8 is diamond, the surface of the film window 8 facing the cathode 4 is coated with metal to form a metal coating 10, and the material of the metal coating 10 is preferably zinc, copper or gold. The surface of the film window 8 facing the anode 7 is subjected to a hydrogenation treatment, forming a hydrogenated surface 11. The accelerated high-energy primary electron beam current 6 penetrates through the metal coating 10 with a certain energy loss and bombards the thin film window 8 to generate electron-hole pairs, and the electron-hole pairs are separated under the action of bias voltage provided by the electrode pair 9. Wherein the holes drift to the metal coating 10 and recombine with complementary electrons in the coating, which drift to the hydrogenated surface 11 and are emitted to form a secondary electron beam 12. The hydrogenated surface 11 has a negative electron affinity that facilitates the escape of electrons from the surface into the vacuum against the potential barrier.
The ratio of the number of electrons in the secondary electron beam 12 to the number of electrons in the primary electron beam 6 is called the secondary electron emission coefficient. The secondary electron emission coefficient of the thin film window 8 is related to the energy of the primary electron beam 6 impinging on the thin film window 8 and the bias voltage applied across the thin film window 8. The higher the energy of the primary electron beam 6, the more number of electron-hole pairs are generated when bombarding the thin film window 8, and the more electrons of the secondary electron beam 12 are emitted. When the voltage applied to the thin film window 8 is a positive voltage of 0-500V, secondary electrons are more easily escaped from the hydrogenated surface 11 under the acceleration of the bias electric field with the increase of the voltage value, and the secondary electron emission coefficient is larger. Conversely, the lower the negative voltage of-500 to 0V applied to the thin film window 8, the greater the repulsive force the secondary electrons receive in the bias electric field, the more difficult they escape from the hydrogenated surface 11, and the smaller the secondary electron emission coefficient. Therefore, by regulating and controlling the bias voltage applied to the film window 8, the secondary electron beam current 12 bombarding the anode 7 can be conveniently and rapidly enhanced, weakened or even cut off, thereby controlling the emission intensity of X-rays and realizing the rapid switching and cutting-off technologies.
The secondary electron emission coefficient of the thin film window 8 can reach more than 10, namely, a secondary electron beam 12 of 100-500 mA for bombarding the anode 7 needs to be generated, and the cathode 4 only needs to emit a primary electron beam 6 of 10-50 mA. Therefore, the thin film window 8 is introduced into the X-ray bulb tube to be used as a secondary electron emission source, the electron emission burden of the cathode 4 is greatly reduced, the working temperature of the cathode 4 is effectively reduced, and the service life of the cathode 4 is greatly prolonged. On the other hand, in contrast to the conventional technique of fig. 4, the rapid "switching" and "switching off" of the X-ray emission is no longer dependent on the grid close to the filament, but is achieved based on bias voltage regulation on the thin film window 8. Therefore, the problem of electrical breakdown between the filament and the grid can be solved fundamentally. The thickness of the diamond film window is very thin, only 0.01-0.5 mm, the insulation performance is good, the dielectric strength is far higher than that of vacuum, and rapid switching and cutting can be realized only by bias voltage of hundred volts (-500V), so that the electrode pair 9 cannot be subjected to electric breakdown.
In the present embodiment, the cross-sectional shape of the film window 8 is not limited, and is preferably one of a rectangular shape, an oval shape, a trapezoidal shape, an i-shape, a zigzag shape, and an S-shape. The electrode pair 9 may be in close contact with the surface of the film window 8 or may be spaced apart from the surface of the film window 8. The electrode pairs 9 are arranged in one-to-one correspondence with the capacitor pairs 2, and the number is not limited to two pairs.
Example 2
As shown in fig. 2, the basic structure of the electron enhancing device of the cathode of the X-ray tube in this embodiment is the same as that of embodiment 1, except that the electron enhancing device further includes a gate 5 and a gate capacitor 13, the gate 5 is disposed on two sides of the thin film window 8, the gate 5 is connected to the gate capacitor 13, and the gate capacitor 13 is connected to the first capacitor 21. In this embodiment, the gate 5 does not need to have the function of rapidly switching and cutting off the X-ray emission, and only needs to control the size and position of the focus of the secondary electron beam 12. The electric field strength required for focus control of the secondary electron beam 12 is much lower than the dielectric strength of vacuum, and no electrical breakdown occurs between the gate 5 and the thin film window 8, so that the voltage of the gate 5 does not need to be high, and the gate 5 does not need to be placed in a position very close to the thin film window 8.
In the present embodiment, the shape of the gate 5 is not limited, and is preferably one of an arc shape, a long strip shape, and a circular ring shape.
The voltages applied to the two electrode pairs above and below the film window 8 do not need to be the same, and the two electrode pairs can be flexibly arranged; the voltages applied to the two gate capacitors need not be the same and can be flexibly set as well. This is favorable to realizing the flexible regulation to focus size and position of electron beam.
Example 3
As shown in fig. 3, the basic structure of the electron enhancing device of the cathode of the X-ray tube in this embodiment is the same as that of embodiment 1, except that the secondary electron emission source composed of the thin film window 8, the electrode pair 9 and the capacitor pair 2 in this embodiment is arranged in a step-by-step multiplication manner, and the second end of the capacitor pair of the secondary electron emission source in the next stage is connected to the first end of the capacitor pair of the secondary electron emission source in the previous stage. In this embodiment, the electrons emitted from the cathode 4 are accelerated and multiplied step by step to strike the anode 7, and X-rays are emitted. The multistage electron-enhanced cascade cathode structure can further reduce the electron emission burden of the filament and better prolong the service life of the filament.
Example 4
In this embodiment, the combination of embodiment 2 and embodiment 3 is that the gate 5 is placed on the multi-stage secondary electron emission source of embodiment 3, the gate 5 may be placed only on the thin film window 8 of a certain stage, or the gates 5 may be placed on all the thin film windows 8 of certain stages, so as to realize the free combination of the multi-stage thin film window 8 and the multi-stage gate 5, and thus, the fast "switching" and "cutting" and beam focus control can be performed on a specific certain stage or certain stages of electron multiplication layers according to actual requirements.
According to the cathode electron enhancement device of the X-ray bulb tube, the secondary electron emission source is introduced into the X-ray bulb tube, so that cathode electron enhancement is realized, the electron emission burden of the filament is reduced, the working temperature of the filament is reduced, and the service life of the filament is prolonged; the electrode pairs are arranged on the two sides of the diamond film window to generate bias voltage, the escape number of secondary electrons is adjusted, the emission intensity of X rays is further controlled, and the occurrence of electric breakdown is effectively avoided when the rapid switching and cutting-off of the emission of the X rays are realized.
The foregoing detailed description of the preferred embodiments of the invention has been presented. It should be understood that numerous modifications and variations could be devised by those skilled in the art in light of the present teachings without departing from the inventive concepts. Therefore, the technical solutions available to those skilled in the art through logic analysis, reasoning and limited experiments based on the prior art according to the concept of the present invention should be within the scope of protection defined by the claims.
Claims (10)
1. An electron enhancing device for a cathode of an X-ray bulb tube comprises a cathode, an anode and an alternating current power supply, wherein one end of the alternating current power supply is grounded, two ends of the cathode are connected with the alternating current power supply, the anode is arranged opposite to the cathode, and the electron enhancing device is characterized by further comprising a film window, an electrode pair and a voltage element, wherein the film window is arranged between the anode and the cathode; each electrode pair comprises two electrodes, the two electrodes of each electrode pair are arranged on two sides of the thin film window, and the two electrodes of each electrode pair are respectively connected to the voltage element; the thin film window, the electrode pair and the voltage element constitute a secondary electron emission source.
2. The X-ray tube cathode electron enhancing apparatus according to claim 1, wherein the voltage element comprises a pair of capacitors, each of the pair of capacitors comprising two capacitors connected in series, a second terminal of each of the pair of capacitors being connected to ground; the capacitor pairs correspond to the electrode pairs in a one-to-one manner, electrodes of the electrode pairs, which are positioned on one side of the anode, are connected to the first ends of the capacitor pairs, and electrodes of the electrode pairs, which are positioned on one side of the cathode, are connected between two capacitors of the capacitor pairs.
3. The electron enhancing apparatus of a cathode in an X-ray tube according to claim 1, wherein the thin film window is made of diamond.
4. The electron enhancing apparatus for a cathode of an X-ray tube as claimed in claim 3, wherein a surface of the thin film window facing the cathode is coated with a metal coating, and a surface of the thin film window facing the anode is subjected to a hydrogenation treatment.
5. The electron enhancing apparatus for cathode of X-ray tube as claimed in claim 4, wherein the metal coating is made of one of Zn, Cu and Au.
6. The electron enhancing apparatus for a cathode of an X-ray tube as claimed in claim 1, wherein the cross-sectional shape of the thin film window is one of rectangular, oval, trapezoidal, i-shaped, saw-toothed, and S-shaped.
7. The X-ray tube cathode electron enhancing device according to claim 2, further comprising a gate and a gate capacitor, wherein the gate is disposed on both sides of the thin film window, the gate is connected to a first terminal of the gate capacitor, and a second terminal of the gate capacitor is connected to a first terminal of the pair of capacitors.
8. The electron enhancing apparatus of claim 7, wherein the grid is one of an arc, a strip, and a ring.
9. The electron enhancing apparatus for cathode of X-ray tube according to claim 2, wherein the secondary electron emission source is disposed in stages between the cathode and the anode, and the second end of the pair of capacitors of the latter stage of the secondary electron emission source is connected to the first end of the pair of capacitors of the former stage of the secondary electron emission source.
10. The X-ray tube cathode electron enhancing apparatus according to claims 7 and 9, wherein the grid electrode is provided in combination with the secondary electron emission source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110520485.7A CN113436950A (en) | 2021-05-13 | 2021-05-13 | Cathode electron enhancing device of X-ray bulb tube |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110520485.7A CN113436950A (en) | 2021-05-13 | 2021-05-13 | Cathode electron enhancing device of X-ray bulb tube |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102427015A (en) * | 2011-11-29 | 2012-04-25 | 东南大学 | Focusing type cold cathode X-ray tube |
| US20130235976A1 (en) * | 2012-03-06 | 2013-09-12 | Samsung Electronics Co., Ltd. | X-ray source device |
| CN103996586A (en) * | 2014-05-19 | 2014-08-20 | 东南大学 | Cold-cathode triode with pointed cone cathode corresponding to conical grid hole |
| CN108922842A (en) * | 2018-06-13 | 2018-11-30 | 山东航天电子技术研究所 | Modulated X-ray generator and method based on microchannel plate |
| KR20190005415A (en) * | 2017-07-06 | 2019-01-16 | (주) 브이에스아이 | Electronically amplified compact x-ray tube |
| CN109473326A (en) * | 2018-11-05 | 2019-03-15 | 中国科学院深圳先进技术研究院 | Field emitting electronic source and application thereof and vacuum electron device and device |
| CN109962003A (en) * | 2017-12-25 | 2019-07-02 | 核工业西南物理研究院 | A kind of cathode electronics enhancement device |
| CN110942968A (en) * | 2019-12-26 | 2020-03-31 | 武汉中科医疗科技工业技术研究院有限公司 | X-ray tube and medical imaging apparatus having the same |
-
2021
- 2021-05-13 CN CN202110520485.7A patent/CN113436950A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102427015A (en) * | 2011-11-29 | 2012-04-25 | 东南大学 | Focusing type cold cathode X-ray tube |
| US20130235976A1 (en) * | 2012-03-06 | 2013-09-12 | Samsung Electronics Co., Ltd. | X-ray source device |
| CN103996586A (en) * | 2014-05-19 | 2014-08-20 | 东南大学 | Cold-cathode triode with pointed cone cathode corresponding to conical grid hole |
| KR20190005415A (en) * | 2017-07-06 | 2019-01-16 | (주) 브이에스아이 | Electronically amplified compact x-ray tube |
| CN109962003A (en) * | 2017-12-25 | 2019-07-02 | 核工业西南物理研究院 | A kind of cathode electronics enhancement device |
| CN108922842A (en) * | 2018-06-13 | 2018-11-30 | 山东航天电子技术研究所 | Modulated X-ray generator and method based on microchannel plate |
| CN109473326A (en) * | 2018-11-05 | 2019-03-15 | 中国科学院深圳先进技术研究院 | Field emitting electronic source and application thereof and vacuum electron device and device |
| CN110942968A (en) * | 2019-12-26 | 2020-03-31 | 武汉中科医疗科技工业技术研究院有限公司 | X-ray tube and medical imaging apparatus having the same |
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Application publication date: 20210924 |