CN113435048A - Semiconductor device life evaluation method and device and temperature detection platform - Google Patents
Semiconductor device life evaluation method and device and temperature detection platform Download PDFInfo
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Abstract
The invention discloses a method and a device for evaluating the service life of a semiconductor device and a temperature detection platform, wherein the method comprises the following steps: acquiring a device thermal resistance value, a device ambient temperature and a device thermal power consumption, and calculating a device junction temperature according to the device thermal resistance value, the device ambient temperature and the device thermal power consumption; acquiring the surface temperature of the tube shell of the device before aging, and calculating the surface thermal resistance value of the tube shell of the device before aging according to the surface temperature of the tube shell, the junction temperature of the device and the thermal power consumption of the device; acquiring the temperature of a monitoring point of the device during aging, and calculating the thermal resistance value of the monitoring point of the device during aging according to the temperature of the monitoring point, the junction temperature of the device and the thermal power consumption of the device; and comparing the thermal resistance value of the surface of the tube shell with the thermal resistance value of the monitoring point to obtain a comparison result, and adjusting the test condition according to the comparison result. The invention can effectively and accurately control the aging junction temperature of the device so as to realize accurate evaluation of the high-temperature operation life of the semiconductor device and the average operation life of the device.
Description
Technical Field
The invention relates to the technical field of electronic component measurement, in particular to a method and a device for evaluating the service life of a semiconductor device and a temperature detection platform.
Background
MTTF (mean operating life) is one of the most important indicators of semiconductor devices. The device is typically accelerated aged using a "three temperature" experiment and the MTTF of the device is then calculated. The experimental result of the three-temperature experiment is strongly related to the junction temperature of the semiconductor device during aging, and the average time before failure of the semiconductor device is calculated by calculating the junction temperature. When a thermal resistance test is performed, a currently common method is to calculate a device thermal resistance θ c according to a thermal power consumption Pdis and an ambient temperature Tc set during the test, and then calculate a junction temperature Tj according to the ambient temperature Tc, the thermal power consumption Pdis and the device thermal resistance θ c, and a calculation formula is as follows: tj + Tc + θ c Pdis.
Because the accuracy of the thermal resistance test depends on whether the upper surface of the device reaches or approaches to the adiabatic condition, in order to improve the accuracy of the thermal resistance test, a semiconductor device or a circuit board is usually placed on a temperature control table top with good thermal conduction, and a test template is adopted to carry out the thermal resistance test. Wherein, the test template includes: DUT (transistor), PCB, and heat sink. The PCB can improve the stability of the circuit board and prevent the transistor from generating self-excitation in the thermal resistance testing process; the heat sink can provide good heat dissipation conditions for the transistor, and heat conduction silicone grease is coated between the heat sink and the temperature control table top of the thermal resistance tester during thermal resistance testing to ensure good heat dissipation between the heat sink and the temperature control table top, so that approximate thermal insulation conditions are realized.
However, the conventional method has the following technical problems: the surface temperature of the transistor needs to reach more than 200 ℃ during thermal resistance measurement, the device is in a non-vacuum environment, and air convection heat dissipation and heat radiation of the device are arranged on the surface, so that the heat insulation condition is difficult to meet; and when the heat dissipation of the device aging heat sink is difficult to reach an ideal state, the heat resistance thetac of the device is seriously deviated from the measured value by increasing the proportion of air convection heat dissipation, so that the junction temperature Tj is deviated from the target temperature when the device is aged, and the detection is inaccurate.
Disclosure of Invention
The invention provides a method and a device for evaluating the service life of a semiconductor device and a temperature detection platform.
A first aspect of an embodiment of the present invention provides a method for evaluating a lifetime of a semiconductor device, where the method includes:
acquiring a device thermal resistance value theta c, a device ambient temperature Tc and a device thermal power consumption Pdis, and calculating a device junction temperature Tj according to the device thermal resistance value theta c, the device ambient temperature Tc and the device thermal power consumption Pdis;
acquiring the surface temperature Tp of a tube shell of a device before aging, and calculating the surface thermal resistance value thetap of the tube shell of the device before aging by adopting the surface temperature Tp of the tube shell, the junction temperature Tj of the device and the thermal power consumption Pdis of the device;
acquiring a monitoring point temperature Tp ' of the device during aging, and calculating a monitoring point thermal resistance value theta p ' of the device during aging by adopting the monitoring point temperature Tp ', the device junction temperature Tj and the device thermal power consumption Pdis;
and comparing the thermal resistance value theta p of the surface of the tube shell with the thermal resistance value theta p' of the monitoring point to obtain a comparison result, and adjusting the test condition according to the comparison result.
In one possible implementation manner of the first aspect, the device junction temperature is calculated according to the following formula:
Tj＝Tc+θc*Pdis。
in one possible implementation manner of the first aspect, the tube-surface thermal resistance value θ p and the monitoring-point thermal resistance value θ p' are respectively calculated according to the following formulas:
θp＝(Tj-Tp)/Pdis；
θp’＝(Tj-Tp’)/Pdis。
in a possible implementation manner of the first aspect, the adjusting the test condition according to the comparison result includes:
if the thermal resistance value theta p of the surface of the tube shell is different from the thermal resistance value theta p' of the monitoring point, adjusting the size of a heat sink attached to the device or the heat dissipation coefficient of the heat sink;
and if the thermal resistance value theta p of the surface of the tube shell is the same as the thermal resistance value theta p' of the monitoring point, maintaining the current testing condition.
In a possible implementation manner of the first aspect, after the step of adjusting the size of the heat sink attached to the device or the heat dissipation coefficient of the heat sink, the method further includes:
and calculating the adjusted thermal resistance value theta p ' of the monitoring point, and repeatedly executing the step of comparing the thermal resistance value theta p of the surface of the tube shell of the device with the thermal resistance value theta p ' of the monitoring point to obtain a comparison result until the thermal resistance value theta p of the surface of the tube shell is the same as the thermal resistance value theta p ' of the monitoring point.
A second aspect of an embodiment of the present invention provides a lifetime evaluation apparatus of a semiconductor device, the apparatus including:
the device comprises an acquisition module, a control module and a control module, wherein the acquisition module is used for acquiring a device thermal resistance value theta c, a device ambient temperature Tc and a device thermal power consumption Pdis, and calculating a device junction temperature Tj according to the device thermal resistance value theta c, the device ambient temperature Tc and the device thermal power consumption Pdis;
the surface thermal resistance calculation module is used for obtaining the surface temperature Tp of the tube shell of the device before aging, and calculating the surface thermal resistance value theta p of the tube shell of the device before aging by adopting the surface temperature Tp of the tube shell, the junction temperature Tj of the device and the thermal power consumption Pdis of the device;
the monitoring thermal resistance calculation module is used for acquiring the temperature Tp ' of a monitoring point of the device during aging, and calculating the thermal resistance value theta p ' of the monitoring point of the device during aging by adopting the temperature Tp ' of the monitoring point, the junction temperature Tj of the device and the thermal power consumption Pdis of the device;
and the comparison module is used for comparing the thermal resistance value theta p of the surface of the tube shell with the thermal resistance value theta p' of the monitoring point to obtain a comparison result and adjusting the test condition according to the comparison result.
A third aspect of the embodiments of the present invention provides a temperature detection platform for a semiconductor device, where the temperature control platform includes a temperature control stage, a heat sink, a tube shell, a first temperature measurement thermocouple, a second temperature measurement thermocouple, and a chip;
the heat sink is arranged on the temperature control platform body, the semiconductor device is arranged on the heat sink, the chip is packaged in the tube shell, the first temperature measurement thermocouple respectively penetrates through the temperature control platform and the heat sink to be contacted with the bottom of the tube shell of the semiconductor device so as to detect the ambient temperature of the semiconductor device, and the second temperature measurement thermocouple is arranged on the top surface of the tube shell of the semiconductor device so as to detect the surface temperature of the tube shell of the semiconductor device.
In a possible implementation manner of the third aspect, the temperature control table body is provided with a temperature control device.
Compared with the prior art, the method, the device and the temperature detection platform for evaluating the service life of the semiconductor device provided by the embodiment of the invention have the beneficial effects that: the invention can detect the temperature of the monitoring point on the top surface of the device when the device is aged, can calculate the thermal resistance value of the monitoring point through the temperature of the monitoring point, then compares the thermal resistance value of the monitoring point with the thermal resistance value of the surface of the tube shell, and determines whether the current detection condition meets the requirement or not according to the comparison result. The invention can facilitate the user to adjust the detection condition, thereby ensuring the accuracy of junction temperature when the semiconductor device is aged so as to accurately evaluate the high-temperature operation life and the average operation life of the semiconductor device.
Drawings
Fig. 1 is a schematic flowchart of a method for evaluating a lifetime of a semiconductor device according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a lifetime evaluation apparatus for a semiconductor device according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a temperature detection platform of a semiconductor device according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The current commonly used junction temperature detection method has the following technical problems: the surface temperature of the transistor needs to reach more than 200 ℃ during thermal resistance measurement, the device is in a non-vacuum environment, and air convection heat dissipation and heat radiation of the device are arranged on the surface, so that the heat insulation condition is difficult to meet; and when the device is aged, the heat sink heat dissipation is difficult to achieve an ideal state. When the proportion of heat dissipation through air convection is increased, the thermal resistance theta c of the device is seriously deviated from a measured value, so that the junction temperature Tj is deviated from a target temperature when the device is aged, and the high-temperature operation life and the average operation life of the device are inaccurately evaluated.
In order to solve the above problem, a method for evaluating the lifetime of a semiconductor device provided in the embodiments of the present application will be described and explained in detail by the following specific embodiments.
Referring to fig. 1, a flow chart of a method for evaluating a lifetime of a semiconductor device according to an embodiment of the present invention is shown.
The method for evaluating the service life of the semiconductor device is applicable to the temperature detection platform of the semiconductor device, and corresponding temperature detection operation can be carried out through the temperature detection platform of the semiconductor device.
As an example, the method for evaluating the lifetime of the semiconductor device may include:
s11, obtaining a device thermal resistance value theta c, a device ambient temperature Tc and a device thermal power consumption Pdis, and calculating a device junction temperature Tj according to the device thermal resistance value theta c, the device ambient temperature Tc and the device thermal power consumption Pdis.
In this embodiment, the thermal resistance value θ c of the device may be obtained by a user through simulation calculation; the ambient temperature Tc of the device can be obtained by real-time detection of a user in a temperature detection platform; and the thermal power consumption Pdis of the device can be calculated by the current and the voltage which are conducted by the device in real time.
In actual operation, three parameters of the thermal resistance value of the simulation device, the ambient temperature of the device and the thermal power consumption of the device can be obtained before the device is subjected to an aging stage.
Specifically, the device junction temperature is calculated according to the following formula:
Tj＝Tc+θc*Pdis。
s12, obtaining the surface temperature Tp of the tube shell before aging of the device, and calculating the surface thermal resistance value theta p of the tube shell before aging of the device by adopting the surface temperature Tp of the tube shell, the junction temperature Tj of the device and the thermal power consumption Pdis of the device.
In this embodiment, a thermocouple may be provided at the surface of the device, and the surface temperature Tp of the device may be acquired by the thermocouple at the surface of the device before the aging.
In an alternative embodiment, the tube surface thermal resistance value θ p may be calculated according to the following formula:
θp＝(Tj-Tp)/Pdis。
s13, obtaining a monitoring point temperature Tp ' of the device during aging, and calculating a monitoring point thermal resistance value theta p ' of the device during aging by adopting the monitoring point temperature Tp ', the device junction temperature Tj and the device thermal power consumption Pdis.
In this embodiment, the monitor point temperature Tp' is the temperature of the surface of the device package taken during the burn-in phase of the device. In order to perform the one-to-one correspondence, in an alternative embodiment, the monitored point temperature Tp 'may also be acquired by a thermocouple on the surface of the package of the device, wherein the positions or monitored points where the package surface temperature Tp and the monitored point temperature Tp' are acquired may be the same.
And then, calculating a monitoring point thermal resistance value theta p 'of the device during aging through the monitoring point temperature Tp', the device junction temperature Tj and the device thermal power consumption Pdis.
In one embodiment, the monitor point thermal resistance value θ p' may be calculated according to the following equation:
θp’＝(Tj-Tp’)/Pdis。
s14, comparing the thermal resistance value theta p of the surface of the tube shell with the thermal resistance value theta p' of the monitoring point to obtain a comparison result, and adjusting the test condition according to the comparison result.
The thermal resistance value theta p of the surface of the tube shell can be compared with the thermal resistance value theta p' of the monitoring point, and then the test condition is adjusted according to the comparison result, so that the accuracy of detection is improved.
As an example, step S14 may include the following sub-steps:
and a substep S141 of adjusting the size of a heat sink attached to the device or the heat dissipation coefficient of the heat sink if the thermal resistance value theta p of the surface of the tube shell is different from the thermal resistance value theta p' of the monitoring point.
By modifying the heat dissipation condition of the heat sink, the heat dissipation of the aging heat sink of the device can reach an ideal state, so that the junction temperature of the device during aging can be close to the target temperature, and the detection accuracy is improved.
In an alternative embodiment, after the sub-step S141, the method may further include:
and calculating the adjusted thermal resistance value theta p ' of the monitoring point, and repeatedly executing the step of comparing the thermal resistance value theta p of the surface of the tube shell of the device with the thermal resistance value theta p ' of the monitoring point to obtain a comparison result until the thermal resistance value theta p of the surface of the tube shell is the same as the thermal resistance value theta p ' of the monitoring point.
When the surface thermal resistance value theta p of the tube shell is different from the thermal resistance value theta p' of the monitoring point, the current detection condition can be determined to fail to reach an ideal state, the temperature of the monitoring point of the primary device can be detected again after the heat dissipation condition is adjusted, the thermal resistance value of the primary monitoring point is calculated according to the temperature of the monitoring point, and the recalculated thermal resistance value of the monitoring point is compared with the surface thermal resistance value of the tube shell until the surface thermal resistance value of the tube shell is the same as the thermal resistance value of the monitoring point.
And a substep S142, if the thermal resistance value theta p of the surface of the tube shell is the same as the thermal resistance value theta p' of the monitoring point, maintaining the current testing condition.
When the surface thermal resistance value of the tube shell is the same as the thermal resistance value of the monitoring point, the target aging junction temperature can be determined to be close to the target temperature, so that the average operating life (MTTF) of the device can be calculated according to the target aging junction temperature, and the accuracy of detection calculation is improved.
In addition, in an optional embodiment, the thermal resistance of the power amplifier heat sink may also be detected. Namely, the temperature of the upper interface and the lower interface of the heat sink can be detected, the heat sink thermal resistance is calculated according to the temperature of the upper interface and the lower interface of the heat sink, the heat sink thermal resistance is compared with the simulated or preset heat sink thermal resistance, and when the heat sink thermal resistance is different from the preset heat sink thermal resistance, the size of the heat sink or the heat dissipation condition (such as the circulation degree of air) is adjusted until the heat sink thermal resistance is the same as the preset heat sink thermal resistance.
In this embodiment, an embodiment of the present invention provides a method for evaluating a lifetime of a semiconductor device, which has the following beneficial effects: the invention can detect the temperature of the monitoring point on the top surface of the device when the device is aged, can calculate the thermal resistance value of the monitoring point through the temperature of the monitoring point, then compares the thermal resistance value of the monitoring point with the thermal resistance value of the surface of the tube shell, and determines whether the current detection condition meets the requirement or not according to the comparison result. The invention can facilitate the user to adjust the detection condition, thereby ensuring the accuracy of junction temperature when the semiconductor device is aged so as to accurately evaluate the high-temperature operation life and the average operation life of the semiconductor device.
An embodiment of the present invention further provides a lifetime assessment apparatus for a semiconductor device, and referring to fig. 2, a schematic structural diagram of the lifetime assessment apparatus for a semiconductor device according to an embodiment of the present invention is shown.
Wherein, as an example, the lifetime evaluation apparatus of the semiconductor device may include:
the obtaining module 201 is configured to obtain a device thermal resistance value θ c, a device ambient temperature Tc, and a device thermal power consumption Pdis, and calculate a device junction temperature Tj according to the device thermal resistance value θ c, the device ambient temperature Tc, and the device thermal power consumption Pdis;
the surface thermal resistance calculation module 202 is used for obtaining the surface temperature Tp of the tube shell of the device before aging, and calculating the surface thermal resistance value thetap of the tube shell of the device before aging by adopting the surface temperature Tp of the tube shell, the junction temperature Tj of the device and the thermal power consumption Pdis of the device;
the monitoring thermal resistance calculating module 203 is used for acquiring a monitoring point temperature Tp ' of the device during aging, and calculating a monitoring point thermal resistance value theta p ' of the device during aging by adopting the monitoring point temperature Tp ', the device junction temperature Tj and the device thermal power consumption Pdis;
and the comparison module 204 is used for comparing the thermal resistance value theta p of the surface of the tube shell with the thermal resistance value theta p' of the monitoring point to obtain a comparison result, and adjusting the test condition according to the comparison result.
Optionally, the device junction temperature is calculated as follows:
Tj＝Tc+θc*Pdis。
optionally, the tube-shell surface thermal resistance value θ p and the monitoring point thermal resistance value θ p' are respectively calculated according to the following formulas:
θp＝(Tj-Tp)/Pdis；
θp’＝(Tj-Tp’)/Pdis。
optionally, the comparing module is further configured to:
if the thermal resistance value theta p of the surface of the tube shell is different from the thermal resistance value theta p' of the monitoring point, adjusting the size of a heat sink attached to the device or the heat dissipation coefficient of the heat sink;
and if the thermal resistance value theta p of the surface of the tube shell is the same as the thermal resistance value theta p' of the monitoring point, maintaining the current testing condition.
Optionally, the apparatus further comprises:
and the repeating module is used for calculating the adjusted thermal resistance value theta p ' of the monitoring point, and repeating the step of comparing the thermal resistance value theta p of the surface of the tube shell of the device with the thermal resistance value theta p ' of the monitoring point to obtain a comparison result until the thermal resistance value theta p of the surface of the tube shell is the same as the thermal resistance value theta p ' of the monitoring point.
Referring to fig. 3, a schematic structural diagram of a temperature detection platform of a semiconductor device according to an embodiment of the present invention is shown.
Specifically, the temperature control platform comprises a temperature control platform body 31, a heat sink 32, a tube shell 33, a first temperature measurement thermocouple 34, a second temperature measurement thermocouple 35 and a chip 36;
the heat sink 32 is arranged on the temperature control platform body 31, the tube shell 33 is arranged on the heat sink 32, the chip 36 is packaged in the tube shell 33, the first temperature measurement thermocouple 34 respectively penetrates through the temperature control platform body 31 and the heat sink 32 to be contacted with the bottom of the tube shell 33 so as to detect the ambient temperature of the tube shell 33, and the second temperature measurement thermocouple 35 is arranged on the top surface of the tube shell 33 so as to detect the surface temperature of the tube shell 33.
Optionally, the temperature control table body 31 is provided with a water cooling device 37.
Further, an embodiment of the present application further provides an electronic device, including: the present invention relates to a semiconductor device, and more particularly, to a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the program to implement a method for estimating a lifetime of a semiconductor device according to the above embodiments.
Further, the present application also provides a computer-readable storage medium, which stores computer-executable instructions for causing a computer to execute a lifetime assessment method of a semiconductor device according to the above embodiments.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention.
Claims (10)
1. A method for evaluating a lifetime of a semiconductor device, the method comprising:
acquiring a device thermal resistance value theta c, a device ambient temperature Tc and a device thermal power consumption Pdis, and calculating a device junction temperature Tj according to the device thermal resistance value theta c, the device ambient temperature Tc and the device thermal power consumption Pdis;
acquiring the surface temperature Tp of a tube shell of a device before aging, and calculating the surface thermal resistance value thetap of the tube shell of the device before aging by adopting the surface temperature Tp of the tube shell, the junction temperature Tj of the device and the thermal power consumption Pdis of the device;
acquiring a monitoring point temperature Tp ' of the device during aging, and calculating a monitoring point thermal resistance value theta p ' of the device during aging by adopting the monitoring point temperature Tp ', the device junction temperature Tj and the device thermal power consumption Pdis;
and comparing the thermal resistance value theta p of the surface of the tube shell with the thermal resistance value theta p' of the monitoring point to obtain a comparison result, and adjusting the test condition according to the comparison result.
2. The method of evaluating the lifetime of a semiconductor device according to claim 1, wherein said device junction temperature is calculated according to the following formula:
Tj＝Tc+θc*Pdis。
3. the method of evaluating the lifetime of a semiconductor device according to claim 1, wherein the case surface thermal resistance value θ p and the monitor point thermal resistance value θ p' are calculated by the following formulas, respectively:
θp＝(Tj-Tp)/Pdis；
θp’＝(Tj-Tp’)/Pdis。
4. the method of evaluating lifetime of a semiconductor device according to any one of claims 1 to 3, wherein said adjusting test conditions according to said comparison result comprises:
if the thermal resistance value theta p of the surface of the tube shell is different from the thermal resistance value theta p' of the monitoring point, adjusting the size of a heat sink attached to the device or the heat dissipation coefficient of the heat sink;
and if the thermal resistance value theta p of the surface of the tube shell is the same as the thermal resistance value theta p' of the monitoring point, maintaining the current testing condition.
5. The method of claim 4, wherein after the step of adjusting the size of the heat sink to which the device is attached or the heat dissipation coefficient of the heat sink, the method further comprises:
and calculating the adjusted thermal resistance value theta p ' of the monitoring point, and repeatedly executing the step of comparing the thermal resistance value theta p of the surface of the tube shell of the device with the thermal resistance value theta p ' of the monitoring point to obtain a comparison result until the thermal resistance value theta p of the surface of the tube shell is the same as the thermal resistance value theta p ' of the monitoring point.
6. An apparatus for evaluating a lifetime of a semiconductor device, the apparatus comprising:
the device comprises an acquisition module, a control module and a control module, wherein the acquisition module is used for acquiring a device thermal resistance value theta c, a device ambient temperature Tc and a device thermal power consumption Pdis, and calculating a device junction temperature Tj according to the device thermal resistance value theta c, the device ambient temperature Tc and the device thermal power consumption Pdis;
the surface thermal resistance calculation module is used for obtaining the surface temperature Tp of the tube shell of the device before aging, and calculating the surface thermal resistance value theta p of the tube shell of the device before aging by adopting the surface temperature Tp of the tube shell, the junction temperature Tj of the device and the thermal power consumption Pdis of the device;
the monitoring thermal resistance calculation module is used for acquiring the temperature Tp ' of a monitoring point of the device during aging, and calculating the thermal resistance value theta p ' of the monitoring point of the device during aging by adopting the temperature Tp ' of the monitoring point, the junction temperature Tj of the device and the thermal power consumption Pdis of the device;
and the comparison module is used for comparing the thermal resistance value theta p of the surface of the tube shell with the thermal resistance value theta p' of the monitoring point to obtain a comparison result and adjusting the test condition according to the comparison result.
7. A temperature detection platform of a semiconductor device is characterized in that the temperature control platform comprises a temperature control platform body, a heat sink, a tube shell, a first temperature measurement thermocouple, a second temperature measurement thermocouple and a chip;
the heat sink is arranged on the temperature control platform body, the tube shell is arranged on the heat sink, the chip is packaged in the tube shell, the first temperature measurement thermocouple respectively penetrates through the temperature control platform body and the heat sink to be contacted with the bottom of the tube shell so as to detect the ambient temperature of the semiconductor device, and the second temperature measurement thermocouple is arranged on the upper surface of the tube shell of the semiconductor device so as to detect the surface temperature of the tube shell of the semiconductor device.
8. The semiconductor device temperature detection platform of claim 7, wherein the temperature control platform body is provided with a temperature control device.
9. An electronic device, comprising: memory, processor and computer program stored on the memory and executable on the processor, characterized in that the processor implements a method for lifetime assessment of a semiconductor device according to any of claims 1-5 when executing the program.
10. A computer-readable storage medium storing computer-executable instructions for causing a computer to execute a lifetime assessment method of a semiconductor device according to any one of claims 1 to 5.
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