CN113433736B - Backlight module, manufacturing method of backlight module and display device - Google Patents

Backlight module, manufacturing method of backlight module and display device Download PDF

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Publication number
CN113433736B
CN113433736B CN202110765113.0A CN202110765113A CN113433736B CN 113433736 B CN113433736 B CN 113433736B CN 202110765113 A CN202110765113 A CN 202110765113A CN 113433736 B CN113433736 B CN 113433736B
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China
Prior art keywords
transflective
substrate
backlight module
light emitting
layer
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CN113433736A (en
Inventor
杨勇
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133602Direct backlight
    • G02F1/133603Direct backlight with LEDs
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133602Direct backlight
    • G02F1/133605Direct backlight including specially adapted reflectors
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133602Direct backlight
    • G02F1/133611Direct backlight including means for improving the brightness uniformity

Abstract

The embodiment of the application discloses a backlight module, a manufacturing method of the backlight module and a display device, wherein the backlight module comprises: a substrate; the light emitting diode is arranged on the substrate; the transflective layer is arranged on the substrate and comprises a plurality of transflective units, each transflective unit comprises at least one transparent bearing film layer and at least one transflective film layer, and the transflective units are arranged around the light emitting diodes; and the packaging layer covers one side of the semi-transparent reflection layer far away from the substrate. The backlight module of the embodiment of the application has a light and thin structure and can obtain a surface light source capable of uniformly mixing light.

Description

Backlight module, manufacturing method of backlight module and display device
Technical Field
The application relates to the field of display, in particular to a backlight module, a backlight module manufacturing method and a display device.
Background
Micro light emitting diodes (minileds or micro leds) have been used in display panels, for example, minileds are used as backlight sources of liquid crystal display panels, and minileds are increasingly spotlighted at present, and have significant application advantages in various consumer electronics products such as pen-top, flat panel and the like due to the advantages of high brightness, high contrast, power consumption saving and high reliability.
However, since the MiniLED backlight is a light-emitting structure of a direct-type backlight, it requires a larger light-mixing distance or a larger number of films to achieve uniform light mixing of the entire backlight, which is not acceptable for most consumer electronics products and deviates from the development trend of light and thin. The micro light emitting diode is a point light source, and it is difficult to obtain a surface light source with uniform light mixing under the condition of a light and thin structure.
Disclosure of Invention
The embodiment of the application provides a backlight module, a backlight module manufacturing method and a display device, and can solve the problems that a MiniLED backlight film layer is thick and a surface light source with uniform light mixing is difficult to obtain.
The embodiment of the application provides a backlight unit, include:
a substrate;
the light emitting diode is arranged on the substrate;
the transflective layer is arranged on the substrate and comprises a plurality of transflective units, each transflective unit comprises at least one transparent bearing film layer and at least one transflective film layer, and the transflective units are arranged around the light emitting diodes;
and the packaging layer covers one side of the semi-transparent reflection layer far away from the substrate.
Optionally, in some embodiments of the present application, the transflective unit is bowl-shaped and includes opposite top and bottom openings, the bottom opening having a length less than a length of the top opening, and the top opening is located on a side of the bottom opening away from the substrate.
Optionally, in some embodiments of the present application, the transflective unit includes a multilayer spacer structure of a transparent carrier film layer and a transflective film layer.
Optionally, in some embodiments of the present application, the light emitting diode is disposed in the transflective unit, and an orthographic projection of the bottom opening on the substrate surrounds an orthographic projection of the light emitting diode on the substrate.
Optionally, in some embodiments of the present application, the thickness of the transflective film layer of the same transflective unit gradually increases or gradually decreases from being close to the light emitting diode to being far from the light emitting diode.
Optionally, in some embodiments of the present application, the transflective film layer includes any one of silicon nitride and silicon oxide.
Optionally, in some embodiments of the present application, the transparent carrier film layer includes an organic material.
Optionally, in some embodiments of the present application, the light emitting diode includes a substrate and a light emitting chip disposed on the substrate, the substrate is located on a side of the light emitting chip away from the base, and a reflective layer is disposed on the substrate.
Correspondingly, the embodiment of the application also provides a method for manufacturing the backlight module, which comprises the following steps:
step S100, providing a mold substrate, wherein the mold substrate comprises a plurality of recesses;
step S200, forming a plurality of transflective units in the recess, wherein the transflective units are bowl-shaped and comprise opposite top openings and bottom openings, the length of the bottom openings is smaller than that of the top openings, and the transflective units comprise at least one transparent carrying film layer and at least one transflective film layer;
step S300, stripping the transflective unit from the mold substrate;
step S400, providing a substrate, wherein a plurality of light emitting diodes are arranged on the substrate;
step S500, arranging a semi-transparent reflection layer on the substrate, wherein the semi-transparent reflection layer comprises a plurality of semi-transparent reflection units, the light emitting diode is arranged in the semi-transparent reflection unit, the orthographic projection of the bottom opening on the substrate surrounds the orthographic projection of the light emitting diode on the substrate, and the top opening is positioned on one side of the bottom opening, which is far away from the substrate;
step S600, forming an encapsulation layer on the transflective layer.
Correspondingly, the embodiment of the application also provides a display device, which comprises any one of the backlight module, and the display device further comprises a liquid crystal display panel, wherein the liquid crystal display panel is arranged on the light emergent side of the backlight module.
In the embodiment of the application, a backlight module, a manufacturing method of the backlight module and a display device are provided, the backlight module has a light and thin structure, and a surface light source capable of uniformly mixing light can be obtained.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic cross-sectional view illustrating a first cross-sectional structure of a backlight module according to an embodiment of the disclosure;
fig. 2 is a schematic diagram of a first top view structure of a backlight module according to an embodiment of the present application;
FIG. 3 is a schematic cross-sectional view of a transflective unit according to an embodiment of the present disclosure;
FIG. 4 is a schematic diagram of a transflective unit according to an embodiment of the present disclosure for reflecting light emitted from a light emitting diode a plurality of times;
FIG. 5 is a schematic view illustrating an angular relationship between a transflective film and a light emitting diode according to an embodiment of the present disclosure;
fig. 6 is a schematic cross-sectional view illustrating a second cross-sectional structure of a backlight module according to an embodiment of the disclosure;
FIG. 7 is a schematic cross-sectional view illustrating a backlight module according to an embodiment of the present application;
fig. 8 is a schematic flowchart illustrating a method for manufacturing a backlight module according to an embodiment of the present disclosure;
fig. 9 to 15 are schematic views illustrating a manufacturing process of a backlight module according to an embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be described clearly and completely with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only some embodiments of the present application, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application. Furthermore, it should be understood that the detailed description and specific examples, while indicating exemplary embodiments of the invention, are given by way of illustration and explanation only, and are not intended to limit the scope of the invention. In the present application, unless indicated to the contrary, the use of the directional terms "upper" and "lower" generally refer to the upper and lower positions of the device in actual use or operation, and more particularly to the orientation of the figures of the drawings; while "inner" and "outer" are with respect to the outline of the device.
The embodiment of the application provides a backlight module, include: a substrate; the light emitting diode is arranged on the substrate; the transflective layer is arranged on the substrate and comprises a plurality of transflective units, each transflective unit comprises at least one transparent bearing film layer and at least one transflective film layer, and the transflective units are arranged around the light emitting diodes; and the packaging layer covers one side of the semi-transparent reflection layer, which is far away from the substrate.
The embodiment of the application provides a backlight module, a backlight module manufacturing method and a display device. The following are detailed below. It should be noted that the following description of the embodiments is not intended to limit the preferred order of the embodiments.
The first embodiment,
Referring to fig. 1, fig. 2, and fig. 3, fig. 1 is a first cross-sectional structural diagram of a backlight module according to an embodiment of the present disclosure, fig. 2 is a first top-view structural diagram of the backlight module according to the embodiment of the present disclosure, and fig. 3 is a cross-sectional structural diagram of a transflective unit according to the embodiment of the present disclosure.
The application embodiment provides a backlight module 10, and the backlight module 10 comprises a substrate 21, a light emitting diode 22, a transflective layer 23 and an encapsulation layer 24. The light emitting diode 22 is arranged on the substrate 21; the transflective layer 23 is disposed on the substrate, the transflective layer 23 includes a plurality of transflective units 231, the transflective units 231 include at least one transparent carrier film 233 and at least one transflective film 232, and the transflective units 231 are disposed around the light emitting diodes 22; an encapsulation layer 24 covers the transflective layer 23 on the side remote from the substrate 21.
Specifically, the substrate 21 may be a substrate made of glass or the like, and is not limited herein. The light emitting diode 22 is disposed on the substrate 21 by welding, the transflective layer 23 includes a plurality of transflective units 231, the transflective units 231 include at least one transparent carrier film 233 and at least one transflective film 232, the transflective units 231 are disposed around the light emitting diode 22, and the encapsulation layer 24 encapsulates the light emitting diode 22 and the transflective layer 23.
In some embodiments, the transflective unit 231 has a bowl shape and includes opposing top and bottom openings 235 and 234, the bottom opening 234 having a length less than a length of the top opening 235, the top opening 235 being located on a side of the bottom opening 234 away from the substrate.
In some embodiments, the transflective unit 231 includes a multilayer spacer structure of a transparent carrier film layer 233 and a transflective film layer 232.
In some embodiments, the light emitting diode 22 is disposed in the transflective unit 231, and the orthographic projection of the bottom opening 234 on the substrate 21 surrounds the orthographic projection of the light emitting diode 22 on the substrate 21.
Specifically, the transflective unit 231 is shaped like a bowl, a barrel, etc. and includes a top opening 235 and a bottom opening 234 opposite to each other, the length of the bottom opening 234 is smaller than the length of the top opening 235, the bottom opening 234 is disposed close to the substrate 21, the light emitting diode 22 is disposed in the bottom opening 234, and the orthographic projection of the bottom opening 234 on the substrate 21 surrounds the orthographic projection of the light emitting diode 22 on the substrate 21. It may be preferable that the orthographic projection of the light emitting diode 22 on the substrate 21 is at the center of the orthographic projection of the bottom opening 234 on the substrate 21, so that the transflective unit 231 is arranged with the light emitting diode 22 as the center.
In some embodiments, the transflective unit 231 includes at least one transparent carrier film layer 233 and at least one transflective film layer 232.
In some embodiments, the transflective unit 231 includes a multilayer spacer structure of a transparent carrier film layer 233 and a transflective film layer 232. The multi-layered spacer structure can reflect the light emitted from the led 22 multiple times, so that the light mixing is more uniform.
In some embodiments, the transflective film layer 232 includes any one of silicon nitride and silicon oxide.
In some embodiments, the transparent carrier film 233 includes an organic material, such as polymethyl methacrylate (PMMA), Polyimide (PI), Polycarbonate (PC), and the like.
In some embodiments, it is preferable that the thicknesses of the transparent carrier film layers 233 of different layers are the same, so that the distances between adjacent transflective film layers 232 are the same.
Referring to fig. 4 and 5, fig. 4 is a schematic diagram illustrating the transflective unit 231 reflects the light emitted by the light emitting diode 22 for multiple times, and fig. 5 is a schematic diagram illustrating an angular relationship between the transflective film 232 and the light emitting diode 22. Multilayer transflective film layer 232 parallel arrangement, the plane contained angle theta of transflective film layer 232 and emitting diode 22 place direction is greater than 90 degrees, the light that emitting diode 22 sent reflects partly through first layer transflective film layer 232, partly sees through and arrives second layer transflective film layer 232, is reflected partly by second layer transflective film layer 232 again, partly light sees through again, so circulation, through the reflection and the seeing through of multilayer transflective film layer 232, can realize good homogeneity mixed light.
Specifically, the semi-transparent reflection unit 231 with the light emitting diode 22 as the center is arranged to form an inclination angle θ larger than 90 ° with the substrate 21, so that the reflected light passing through the semi-transparent reflection unit 231 can be emitted upwards, and the size of the obtuse angle is related to the light emitting opening angle of the light emitting diode 22, so as to ensure that the reflected light is emitted upwards in the angle direction with the maximum light emitting intensity of the light emitting diode 22.
In some embodiments, referring to fig. 6, fig. 6 is a schematic cross-sectional view of a second cross-sectional structure of a backlight module provided in the embodiments of the present application, in which the light emitting diode 22 includes a substrate and a light emitting chip disposed on the substrate, the substrate is located on a side of the light emitting chip away from the base, and a reflective layer 221 is disposed on the substrate.
Specifically, the substrate of the light emitting chip may be a sapphire substrate, and a high-reflection film layer is plated on the surface of the substrate to serve as the reflection layer 221, so as to suppress light emission at the lamp socket of the light emitting chip, and ensure that the intensity of light emitted from the lamp socket is the same as that of light emitted from the semi-transparent reflection unit 231.
Specifically, referring to fig. 6, a reflective film 211 is further disposed on the substrate 21, and the reflective film 211 is used for reflecting the light of the light emitting chip and reflecting the light reflected from the transflective unit 231 onto the substrate 21. The light emitting diode 22 and the transflective unit 231 are disposed on a side of the reflective film 211 away from the substrate 21.
It can be understood that the light emitted from the led 22 is reflected by the reflective layer 221 on the surface of the substrate, so that a large amount of light passes through the transflective unit 231, and a good uniformity of the mixed light source is finally obtained on the light emitting side by repeated reflection of the light between the reflective film 211 and the transflective unit 231 on the substrate 21.
Specifically, the light-emitting side refers to a predetermined light-emitting direction of the backlight module 10, and in fig. 6, the light-emitting side refers to a direction or a side of the encapsulation layer 24 away from the substrate 21.
In the embodiment of the application, a backlight module and a display device are provided, the backlight module has only a substrate, a light emitting diode, a transflective layer and an encapsulation layer structure, and is simple and light and thin in structure, so that the backlight module has a light and thin structure, and the transflective layer can be arranged to obtain a good surface light source capable of uniformly mixing light.
Example II,
Referring to fig. 7, fig. 7 is a schematic cross-sectional view illustrating a third cross-sectional structure of a backlight module according to an embodiment of the present disclosure, where the structure of the embodiment of the present disclosure is the same as or similar to that of the embodiment of the present disclosure, and details of the same parts are not repeated, except that: the thickness of the transflective film layer 232 of the same transflective unit 231 gradually increases or gradually decreases from the direction close to the light emitting diode 22 to the direction away from the light emitting diode 22.
Specifically, the light that emitting diode 22 sent is luminance the biggest when passing through nearest first layer transflective film layer 232, luminance reduces when reacing second layer transflective film layer 232, luminance further reduces again when reacing third layer transflective film layer 232, thickness crescent or the diminishing gradually through the transflective film layer 232 that sets up same transflective unit 231, make transflective film layer 232 to the reflectivity of light by being close to emitting diode 22 on the directional direction of keeping away from emitting diode 22, the reflectivity crescent of the transflective film layer 232 of same transflective unit 231, so that the light mixes more evenly, make the light intensity homogeneity of the position of each side of light-emitting side better.
Specifically, the transflective film layer 232 has a certain transmittance for light with a specific wavelength (within a visible light range), and when the light is directed to a direction away from the light emitting diode 22 by being close to the light emitting diode 22, the transmittance of the transflective film layer 232 is increased, and the reflectance is decreased, so that the transmittance and the reflectance of the transflective film layer 232 of the transflective unit 231 can be matched with the trend that the light intensity of the light emitting diode 22 is decreased along with the increase of the distance, and the light mixing is more uniform.
As shown in fig. 4, the light emitting intensity of the light emitted from the light emitting diode 22 is L0 due to the structure of the reflective layer 221, the light emitted from the main light emitting angle of the light emitting diode 22 is reflected and transmitted by the transflective unit 231, the reflected light is emitted along a direction substantially perpendicular to the surface of the substrate 21, and the transmitted light is transmitted along a straight line in the transflective unit 231 according to a predetermined direction. Assuming that the light intensity of the transmitted light from the light emitting diode 22 toward the direction far from the light emitting diode 22 is L1, L2 to Ln in sequence, the light intensity of the vertically emitted light after passing through the transflective film layer 232 is L11, L12 to L1n in sequence, the transmittance of the transflective film layer 232 from the light emitting diode 22 toward the direction far from the light emitting diode 22 is T1, T2 … Tn in sequence, and the reflectance is R1, R2 … Rn in sequence, it is satisfied that L1n equals Ln, L0 equals L12 … equals L1, T1> T6867378 > Tn, and R1< R2< … < Rn, that is, the light intensity of the light emitting diode 22 at the light opening and the light intensity of the different transflective film layers 232 are equal, and the light intensity of the light emitted from the whole surface is more uniform. In order to realize different transmittances and reflectivities of the transflective film layer 232 at different positions, the thicknesses and the number of stacked layers of different material film layers in the film system need to be designed to achieve the above transmittance and reflectivity parameters.
Example III,
Referring to fig. 8 and 9 to 15, an embodiment of the present application further provides a method for manufacturing a backlight module, fig. 8 illustrates a flow step diagram of the method for manufacturing the backlight module provided by the embodiment of the present application, and fig. 9 to 15 illustrate a process for manufacturing the backlight module. The backlight module 10 of any of the above embodiments can be manufactured by the method for manufacturing a backlight module of this embodiment, and the method for manufacturing a backlight module includes the following steps: step S100, step S200, step S300, step S400, step S500, and step S600.
Step S100, as shown in fig. 9, provides a mold substrate 30, and the mold substrate 30 includes a plurality of recesses 31.
Specifically, as shown in fig. 9, a mold substrate 30 is provided, the mold substrate 30 includes a plurality of recesses 31, the plurality of recesses 31 are bowl-shaped, the recesses 31 have a bottom 311 and an upper opening 312, and the length of the bottom 311 is smaller than the length of the upper opening 312.
Step S200, as shown in fig. 10 and 11, forming a plurality of transflective units 231 in the recess 31, where the transflective units 231 are bowl-shaped and include opposite top openings 235 and bottom openings 234, the length of the bottom openings 234 is smaller than that of the top openings 235, and the transflective units 231 include at least one transparent carrier film layer 233 and at least one transflective film layer 232.
Specifically, as shown in fig. 10 and 11, a multi-layer structure including at least one transparent carrier film layer 233 and at least one transflective film layer 232 is formed on the mold substrate 30, and then a transflective unit 231 is formed by etching or the like, where the transflective unit 231 includes a top opening 235 and a bottom opening 234 opposite to each other, and a length of the bottom opening 234 is smaller than a length of the top opening 235.
Specifically, the thickness of the transflective film layer 232 of the different layers can be controlled to control the transmittance and the reflectance of the transflective film layer 232 of the different layers.
In step S300, as shown in FIG. 12, the transflective unit 231 is peeled off from the mold substrate 30.
In step S400, as shown in fig. 13, a substrate 21 is provided, and a plurality of light emitting diodes 22 are disposed on the substrate 21.
In step S500, as shown in fig. 14, a transflective layer 23 is disposed on the substrate 21, the transflective layer 23 includes a plurality of transflective units 231, the light emitting diode 22 is disposed in the transflective units 231, an orthographic projection of the bottom opening 234 on the substrate 21 surrounds an orthographic projection of the light emitting diode 22 on the substrate 21, and the top opening 235 is located on a side of the bottom opening 234 away from the substrate 21.
Preferably, the bottom opening 234 is 5% to 10% larger than the size of the light emitting diode 22 so that the transflective unit 231 is disposed just around the light emitting diode 22.
In step S600, as shown in FIG. 15, an encapsulation layer 24 is formed on the transflective layer 23.
The backlight module 10 provided by the embodiment of the application has a simple structure, and the backlight module 10 has a light and thin effect, and meanwhile, the backlight module 10 can provide a light source with good light mixing uniformity.
It should be noted that the mold substrate 30 and the transparent carrier film layer 233 can be manufactured by a hot molding process. The transflective unit 231 may be fabricated on the substrate 21 through a dispensing process. The encapsulation layer 24 may be formed by glue spraying, spin coating, or the like, and the encapsulation layer 24 may fill the gap between the adjacent transflective units 231.
Example four,
The embodiment of the present application further provides a display device, including any one of the backlight modules 10 in the above embodiments, the display device further includes a liquid crystal display panel, the liquid crystal display panel is disposed on the light exit side of the backlight module 10, and the backlight module 10 provides a light source for the liquid crystal display panel.
The backlight module, the backlight module manufacturing method and the display device provided by the embodiment of the application are introduced in detail, a specific example is applied to explain the principle and the implementation of the application, and the description of the embodiment is only used for helping to understand the method and the core idea of the application; meanwhile, for those skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.

Claims (10)

1. A backlight module, comprising:
a substrate;
the light emitting diode is arranged on the substrate;
the transflective layer is fixedly arranged on the substrate and comprises a plurality of transflective units arranged at intervals, each transflective unit comprises at least one transparent bearing film layer and at least one transflective film layer, and the transflective units are arranged around the light-emitting diodes;
and the packaging layer covers one side of the semi-transparent reflection layer, which is far away from the substrate, and fills a gap between two adjacent semi-transparent reflection units.
2. The backlight module of claim 1, wherein the transflective unit is bowl-shaped and includes opposing top and bottom openings, the bottom opening having a length less than a length of the top opening, the top opening being located on a side of the bottom opening away from the substrate.
3. The backlight module of claim 2, wherein the transflective unit comprises a multi-layered spacer structure of a transparent carrier film layer and a transflective film layer.
4. The backlight module according to claim 3, wherein the LEDs are disposed in the transflective unit, and an orthographic projection of the bottom opening on the substrate surrounds an orthographic projection of the LEDs on the substrate.
5. The backlight module as claimed in claim 4, wherein the transflective film layer of the same transflective unit has a thickness gradually increasing or decreasing from a direction close to the LEDs to a direction away from the LEDs.
6. The backlight module as claimed in claim 3, wherein the transflective film layer comprises any one of silicon nitride and silicon oxide.
7. The backlight module of claim 6, wherein the transparent carrier film layer comprises an organic material.
8. The backlight module of claim 7, wherein the light emitting diode comprises a substrate and a light emitting chip disposed on the substrate, the substrate is disposed on a side of the light emitting chip away from the base, and a reflective layer is disposed on the substrate.
9. A method for manufacturing a backlight module is characterized by comprising the following steps:
step S100, providing a mold substrate, wherein the mold substrate comprises a plurality of recesses;
step S200, forming a plurality of transflective units in the recess, wherein each transflective unit is in a bowl shape and comprises a top opening and a bottom opening which are opposite to each other, the length of the bottom opening is smaller than that of the top opening, and each transflective unit comprises at least one transparent bearing film layer and at least one transflective film layer;
step S300, stripping the transflective unit from the mold substrate;
step S400, providing a substrate, wherein a plurality of light emitting diodes are arranged on the substrate;
step S500, fixedly arranging a semi-transparent reflection layer on the substrate, wherein the semi-transparent reflection layer comprises a plurality of semi-transparent reflection units arranged at intervals, the light emitting diode is arranged in the semi-transparent reflection unit, the orthographic projection of the bottom opening on the substrate surrounds the orthographic projection of the light emitting diode on the substrate, and the top opening is positioned on one side of the bottom opening, which is far away from the substrate;
step S600, forming an encapsulation layer on the transflective layer, wherein the encapsulation layer fills a gap between two adjacent transflective units.
10. A display device, comprising the backlight module as claimed in any one of claims 1 to 8, and further comprising a liquid crystal display panel disposed on a light-emitting side of the backlight module.
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