CN113421978A - Preparation method of magnetic perovskite thin film under action of weak magnetic field - Google Patents
Preparation method of magnetic perovskite thin film under action of weak magnetic field Download PDFInfo
- Publication number
- CN113421978A CN113421978A CN202110499211.4A CN202110499211A CN113421978A CN 113421978 A CN113421978 A CN 113421978A CN 202110499211 A CN202110499211 A CN 202110499211A CN 113421978 A CN113421978 A CN 113421978A
- Authority
- CN
- China
- Prior art keywords
- magnetic field
- film
- zno
- thin film
- spin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 36
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims abstract description 54
- 239000010408 film Substances 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 239000002073 nanorod Substances 0.000 claims abstract description 37
- 238000000137 annealing Methods 0.000 claims abstract description 33
- 230000005426 magnetic field effect Effects 0.000 claims abstract description 29
- 238000004528 spin coating Methods 0.000 claims abstract description 25
- 239000011521 glass Substances 0.000 claims abstract description 23
- 239000002243 precursor Substances 0.000 claims abstract description 12
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 12
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910000069 nitrogen hydride Inorganic materials 0.000 claims description 81
- 239000000243 solution Substances 0.000 claims description 32
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 17
- 229910021584 Cobalt(II) iodide Inorganic materials 0.000 claims description 16
- 239000007788 liquid Substances 0.000 claims description 16
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-dimethylformamide Substances CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 13
- 239000008367 deionised water Substances 0.000 claims description 13
- 229910021641 deionized water Inorganic materials 0.000 claims description 13
- 238000006243 chemical reaction Methods 0.000 claims description 12
- 229910052593 corundum Inorganic materials 0.000 claims description 12
- 239000010431 corundum Substances 0.000 claims description 12
- 238000001035 drying Methods 0.000 claims description 12
- 239000011259 mixed solution Substances 0.000 claims description 12
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 10
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 10
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 10
- 239000011701 zinc Substances 0.000 claims description 10
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 8
- 238000003756 stirring Methods 0.000 claims description 8
- 239000000725 suspension Substances 0.000 claims description 8
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 7
- 238000005406 washing Methods 0.000 claims description 7
- FPCJKVGGYOAWIZ-UHFFFAOYSA-N butan-1-ol;titanium Chemical compound [Ti].CCCCO.CCCCO.CCCCO.CCCCO FPCJKVGGYOAWIZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000007864 aqueous solution Substances 0.000 claims description 5
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims description 5
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 4
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 4
- 238000001914 filtration Methods 0.000 claims description 4
- 239000005457 ice water Substances 0.000 claims description 4
- 239000012046 mixed solvent Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- -1 polytetrafluoroethylene Polymers 0.000 claims description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 4
- 239000011148 porous material Substances 0.000 claims description 3
- 239000012266 salt solution Substances 0.000 claims description 3
- XLYOFNOQVPJJNP-ZSJDYOACSA-N heavy water Substances [2H]O[2H] XLYOFNOQVPJJNP-ZSJDYOACSA-N 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 150000003839 salts Chemical class 0.000 claims description 2
- 239000011592 zinc chloride Substances 0.000 claims description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 2
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 claims 1
- AVWLPUQJODERGA-UHFFFAOYSA-L cobalt(2+);diiodide Chemical compound [Co+2].[I-].[I-] AVWLPUQJODERGA-UHFFFAOYSA-L 0.000 claims 1
- 239000004246 zinc acetate Substances 0.000 claims 1
- 238000000151 deposition Methods 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000003980 solgel method Methods 0.000 abstract 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 1
- 229910001887 tin oxide Inorganic materials 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 12
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 description 8
- 230000005669 field effect Effects 0.000 description 8
- 239000010931 gold Substances 0.000 description 6
- 238000009987 spinning Methods 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 3
- XKKVXDJVQGBBFQ-UHFFFAOYSA-L zinc ethanol diacetate Chemical compound C(C)O.C(C)(=O)[O-].[Zn+2].C(C)(=O)[O-] XKKVXDJVQGBBFQ-UHFFFAOYSA-L 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000000349 field-emission scanning electron micrograph Methods 0.000 description 2
- 238000002189 fluorescence spectrum Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 238000002371 ultraviolet--visible spectrum Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910001429 cobalt ion Inorganic materials 0.000 description 1
- XLJKHNWPARRRJB-UHFFFAOYSA-N cobalt(2+) Chemical compound [Co+2] XLJKHNWPARRRJB-UHFFFAOYSA-N 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F13/00—Apparatus or processes for magnetising or demagnetising
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
The invention discloses a preparation method of a magnetic perovskite thin film under the action of a weak magnetic field, which comprises the steps of firstly preparing a ZnO nanorod array thin film on an FTO (fluorine-doped tin oxide) conductive glass substrate, and then coating TiO on the ZnO nanorod array thin film by adopting a sol-gel method2To obtain ZnO @ TiO2A nanorod array film; then adopting two-step continuous solution deposition method, firstly spin-coating PbI on the surface of the film2Precursor solution, and then immersing into CoI2‑CH3NH3I, reacting in isopropanol solution, annealing the film and simultaneously applying the weak magnetic field effect to prepare CH with the weak magnetic field effect3NH3Pb0.9Co0.1I3A film; the invention is operated by weak magnetic fieldBy a pair of CH3NH3Pb0.9Co0.1I3The perovskite is modified, so that the photovoltaic performance, the humidity stability, the thermal stability and the light stability of the corresponding battery can be obviously improved, and the commercialization of the battery is promoted.
Description
Technical Field
The invention belongs to the technical field of preparation of solar cells, particularly relates to a preparation method of a perovskite solar cell light absorption layer, and particularly relates to a preparation method of a magnetic perovskite thin film under the action of a weak magnetic field.
Background
Perovskites have attracted considerable attention in the field of solar cells due to their excellent charge transport properties, long carrier diffusion lengths, full-spectrum absorption, and high absorption coefficients. These advantages make them capable of efficiently capturing photons and achieving photoelectric conversion. Since 2009, organic-inorganic hybrid perovskite type solar cells have been rapidly developed, and their Photoelectric Conversion Efficiency (PCE) has been rapidly improved from 3.8% to 25.5%. However, organic-inorganic hybrid perovskites are highly susceptible to factors such as moisture, light, heat, oxygen in the air, leading to decomposition of the perovskite material. Therefore, the long-term stability of the perovskite type solar cell is inhibited, which becomes a major bottleneck for further commercialization of the perovskite type solar cell. In order to solve the problem, the invention improves the stability of the perovskite thin film and the corresponding solar cell by doping magnetic cobalt ions in the perovskite and applying the weak magnetic field effect, provides a new idea for improving the performance of the perovskite solar cell and provides a valuable reference for promoting the commercialization of the perovskite solar cell. The research result of the invention shows that CH is improved3NH3PbI3The morphology, structure, optical properties, stability of the perovskite thin film and the stability of the corresponding device.
Disclosure of Invention
The invention aims to provide a method for improving the stability of a perovskite solar cell, the core of the method is a preparation method of a magnetic perovskite thin film under the action of a weak magnetic field, and the perovskite thin film prepared by the method can effectively improve the stability of a device and promote the commercialization process of the device when applied to the solar cell.
The preparation method of the magnetic perovskite thin film under the action of the weak magnetic field can comprise the following steps:
(1) spin-coating 95-105 muL of zinc acetate ethanol solution with the mass concentration of 0.005-0.007 g/mL on an FTO conductive glass substrate treated by ultraviolet ozone for 30s at 3000r/min for 3 times, and then annealing at 150 ℃ for 15 min; the above process is repeated, the spinning is carried out for 30s according to 3000r/min, the spinning is carried out for 3 times, and the annealing is carried out for 15min at 150 ℃; and finally, spin-coating for 30s at 3000r/min for 3 times, and annealing at 350 ℃ for 45min to obtain the ZnO seed layer with the FTO conductive glass as the substrate.
(2) Adding Zn salt solution of 25-100 mM and polyvinylpyrrolidone water solution of 0.001-0.006 g/mL mass concentration as Zn2+Polyvinylpyrrolidone in a molar ratio of 1: 2-2: 1, mixing to obtain a mixed solution;
(3) and (3) adding ammonia water into the mixed solution prepared in the step (2), and adjusting the pH value to 9-11 to obtain a growth liquid.
(4) Horizontally inverting the ZnO seed layer prepared in the step (1) and taking the FTO conductive glass as the substrate, immersing the ZnO seed layer on a suspension frame into the growth liquid prepared in the step (3), carrying out water bath reaction at the temperature of 95-105 ℃ for 4-12min, washing the ZnO seed layer with deionized water, and carrying out N-step ion exchange2And drying to obtain the substrate.
(5) Putting the substrate taken out in the step (4) on a corundum boat, putting the corundum boat into a tube furnace, and putting the corundum boat in the tube furnace2The flow rate is 10-50mL/min, the temperature is raised from room temperature to 350-450 ℃ at the heating rate of 5 ℃/min, and the oxidizing sintering is carried out for 10-60 min.
(6) And (4) naturally cooling the substrate treated in the step (5) to room temperature, repeatedly rinsing the substrate with deionized water, and airing the substrate in the air to obtain the ZnO nanorod array film taking the FTO conductive glass as the substrate.
(7) Horizontally inverting the ZnO nanorod array film prepared in the step (6) on a suspension bracket, putting the film into a uniformly mixed solution of butyl titanate and isopropanol with the volume ratio of 1mL:50 mL-1 mL:120mL, adding 100-140 mu L of deionized water, magnetically stirring for reaction for 4-8 h, taking out, and reacting with isopropanolRinsing, and annealing at 450 deg.C for 30 min. After cooling, treating a titanium tetrachloride water solution with the volume ratio of 1/500-1/1000 for 30min by using an ice water bath, and annealing the film at 450 ℃ for 30min to obtain ZnO @ TiO taking FTO conductive glass as a substrate2A nanorod array film.
(8) 0.2305g to 0.6915g of PbI2Dissolving the mixture in a DMF (N, N-dimethylformamide)/DMSO (dimethyl sulfoxide) mixed solvent with the volume ratio of 8: 1-10: 1, and magnetically stirring the mixture at 70 ℃ for 30 min. Then filtering the mixture by using a polytetrafluoroethylene filter head with the aperture of 0.2 mu M to obtain PbI with the molar concentration of 0.5-1.5M2And (3) precursor solution. Mixing 0.1801-0.2222 g of CH3NH3I and 0.005-0.015 g of CoI2Dissolving in isopropanol to prepare CH3NH3I：CoI2CH with a molar ratio of 8:1 to 12:13NH3I-CoI2An isopropanol solution.
(9) Taking the PbI prepared in the step (8)2150 mu L of precursor solution is spin-coated for 30s at 3000r/min to the ZnO @ TiO treated by ultraviolet ozone2Immersing the surface of the nanorod array film in isopropanol for 1min, taking out, spin-drying the excessive liquid for 30s at 3000r/min, and annealing at 70 ℃ for 30 min. Placing the prepared CH in the step (8)3NH3I-CoI2Reacting in isopropanol solution for 40-100 s, taking out, spin-coating for 30s according to 3000r/min, spin-drying for redundant liquid, annealing at 80-110 ℃ for 1-5 min, placing 2 magnet blocks of 10cm by 1cm at a position 0.1-1 cm away from the right upper part of the film for applying a weak magnetic field effect, and continuously applying the weak magnetic field effect for 10-40 min after annealing is finished to obtain CH with the weak magnetic field effect3NH3Pb0.9Co0.1I3A film.
In step (1) of the present invention, Zn (CH) may be used as the Zn salt3COO)2·2H2O、ZnCl2Or Zn (NO)3)2. The polyvinylpyrrolidone has an average molecular weight of 1,300,000.
The FTO conductive glass has the specification of 20 mm-25 mm, the square resistance of 14 omega and the light transmittance of more than or equal to 90 percent.
The invention adopts a novel two-step continuous deposition method,in CH3NH3PbI3Co doping in the process of growing perovskite film2+Ions are added and a weak magnetic field is applied to prepare the magnetic CH3NH3Pb1-xCoxI3A film. The research result shows that Co is doped2+The ions and the weak magnetic field are applied to improve CH3NH3PbI3The morphology, structure, optical properties, stability of the perovskite thin film, and the stability and photovoltaic properties of the corresponding solar cell. The research provides a new idea for improving the performance of the perovskite thin film and the device and provides a valuable reference for promoting the commercialization of the perovskite thin film and the device.
Drawings
FIG. 1 is a field emission scanning electron micrograph of a perovskite thin film: (a) CH (CH)3NH3PbI3；(b)CH3NH3Pb0.9Co0.1I3WOMF (field-free effect); (c) CH (CH)3NH3Pb0.9Co0.1I3WMF (weak magnetic field effect); (d) CH (CH)3NH3Pb0.9Co0.1I3SMF (high magnetic field effect).
FIG. 2 is a graph of deposition on ZnO @ TiO2XRD pattern of perovskite thin film on nanorod array.
FIG. 3(a) is CH3NH3PbI3，CH3NH3Pb0.9Co0.1I3WOMF (magnetic field-free effect), CH3NH3Pb0.9Co0.1I3WMF (low field effect), CH3NH3Pb0.9Co0.1I3-uv-vis absorption spectrum of SMF (high magnetic field effect) perovskite thin films; FIG. 3(b) is CH3NH3PbI3，CH3NH3Pb0.9Co0.1I3WOMF (magnetic field-free effect), CH3NH3Pb0.9Co0.1I3WMF (low field effect), CH3NH3Pb0.9Co0.1I3Fluorescence spectrum of SMF (high magnetic field effect) perovskite thin film.
FIG. 4 shows a perovskite thin film (a) CH stored in air for 0-72 h3NH3PbI3；(b)CH3NH3Pb0.9Co0.1I3WOMF (field-free effect); (c) CH (CH)3NH3Pb0.9Co0.1I3WMF (weak magnetic field effect); (d) CH (CH)3NH3Pb0.9Co0.1I3-XRD pattern of SMF (strong magnetic field effect); (e) normalized intensity of XRD characteristic diffraction peak corresponding to perovskite (110) crystal face.
FIG. 5 is CH3NH3PbI3，CH3NH3Pb0.9Co0.1I3WOMF (magnetic field-free effect), CH3NH3Pb0.9Co0.1I3WMF (low field effect), CH3NH3Pb0.9Co0.1I3J-V curve of SMF (high magnetic field effect) perovskite solar cell.
FIG. 6 is CH3NH3PbI3，CH3NH3Pb0.9Co0.1I3WOMF (magnetic field-free effect), CH3NH3Pb0.9Co0.1I3WMF (low field effect), CH3NH3Pb0.9Co0.1I3-humidity stability of SMF (high magnetic field effect) perovskite solar cells (a); (b) thermal stability; (c) light stability
Detailed Description
The present invention will be described in detail with reference to the following examples.
Example 1
(1) Spin-coating 100 mu L of zinc acetate ethanol solution with the mass concentration of 0.005g/mL on an FTO conductive glass substrate treated by ultraviolet ozone, spin-coating 30s at 3000r/min for 3 times, and then annealing for 15min at 150 ℃; the above process is repeated, the spinning is carried out for 30s according to 3000r/min, the spinning is carried out for 3 times, and the annealing is carried out for 15min at 150 ℃; and finally, spin-coating for 30s at 3000r/min for 3 times, and annealing at 350 ℃ for 45min to obtain the ZnO seed layer with the FTO conductive glass as the substrate.
(2) 25mM Zn salt solution in water and mass concentration of 0.0015g/mL polyvinylpyrrolidone in aqueous solution as Zn2+Polyvinylpyrrolidone in a molar ratio of 1: 1, mixing to obtain a mixed solution;
(3) and (3) adding ammonia water into the mixed solution prepared in the step (2), and adjusting the pH value to 9 to obtain a growth solution.
(4) Horizontally inverting the ZnO seed layer prepared in the step (1) and taking the FTO conductive glass as the substrate, immersing the ZnO seed layer on a suspension frame into the growth liquid prepared in the step (3), carrying out water bath reaction at 99 ℃ for 10min, washing the ZnO seed layer with deionized water, and carrying out N2And drying to obtain the substrate.
(5) Putting the substrate taken out in the step 4 on a corundum boat, putting the corundum boat into a tube furnace, and putting the corundum boat in a furnace O2The flow rate is 25mL/min, the temperature is raised from room temperature to 420 ℃ at the heating rate of 5 ℃/min, and the oxidation sintering is carried out for 30 min.
(6) And (4) naturally cooling the substrate treated in the step (5) to room temperature, repeatedly rinsing the substrate in deionized water at 90 ℃, and airing the substrate in the air to obtain the ZnO nanorod array film taking the FTO conductive glass as the substrate.
(7) Horizontally inverting the ZnO nanorod array film prepared in the step (6) on a suspension bracket, putting the ZnO nanorod array film into a uniformly mixed solution of butyl titanate and isopropanol with the volume ratio of 1mL to 90mL, adding 120 mu L of deionized water, magnetically stirring for reaction for 5h, taking out, washing with isopropanol, and annealing at 450 ℃ for 30 min. After cooling, the titanium tetrachloride water solution with the volume ratio of 1/700 is treated for 30min by using ice water bath, and then the film is annealed for 30min at 450 ℃ to obtain ZnO @ TiO taking the FTO conductive glass as the substrate2A nanorod array film.
(8) Mixing a certain mass of PbI2Dissolving in DMF (N, N-dimethylformamide)/DMSO (dimethyl sulfoxide) mixed solvent at volume ratio of 8:1, and magnetically stirring at 70 deg.C for 30 min. Then filtering with a polytetrafluoroethylene filter head with the pore diameter of 0.2 mu M to obtain PbI with the molar concentration of 0.5M2And (3) precursor solution. 0.1801g of CH3NH3I and 0.0091g CoI2Dissolving in isopropanol to prepare CH3NH3I：CoI2CH with a molar ratio of 10:13NH3I-CoI2An isopropanol solution.
(9) Taking the PbI prepared in the step (8)2Precursor of150 mu L of the solution is spun into ZnO @ TiO treated by ultraviolet ozone for 30s at 3000r/min2Immersing the surface of the nanorod array film in isopropanol for 1min, taking out, spin-drying the excessive liquid for 30s at 3000r/min, and annealing at 70 ℃ for 30 min. Placing the prepared CH in the step (8)3NH3I-CoI2Reacting in isopropanol solution for 50s, taking out, spin-coating at 3000r/min for 30s to spin-dry the excess liquid, annealing at 80 deg.C for 1min, and placing 2 magnet blocks 10cm by 1cm at a position 0.2cm above the film to exert weak magnetic field effect. After the annealing is finished, continuing the action of the low-intensity magnetic field for 20min to obtain CH acted by the low-intensity magnetic field3NH3Pb0.9Co0.1I3A film; in addition, the comparison example of no magnetic field effect and strong magnetic field effect is also carried out respectively, the strong magnetic field effect is that 5 magnet blocks of 10cm by 1cm are placed at a position 0.2cm away from the right upper part of the thin film to exert the strong magnetic field effect, and after the annealing is finished, the strong magnetic field effect is continuously exerted for 20 min; the other conditions are the same;
(10) 40 mu L of Spiro-OMeTAD cobalt-based spin-coating liquid is pipetted by a liquid transfer gun and is dripped on the FTO/ZnO @ TiO prepared in the step (9) adsorbed on a vacuum chuck2Nanorod array/weak magnetic field CH3NH3Pb0.9Co0.1I3Spin coating on the film substrate at 3000r/min for 30s to obtain FTO/ZnO @ TiO2Nanorod array/weak magnetic field CH3NH3Pb0.9Co0.1I3The film is a cobalt-doped Spiro-OMeTAD hole transport layer of the substrate.
(11) Under high vacuum (5X 10)-5Pa) in FTO/ZnO @ TiO2Nanorod array/weak magnetic field CH3NH3Pb0.9Co0.1I3Thermally evaporating a layer of gold (Au) with the thickness of 80nm on a/Spiro-OMeTAD substrate to be used as a cathode to obtain a structure of FTO/ZnO @ TiO2Nanorod array/weak magnetic field CH3NH3Pb0.9Co0.1I3Perovskite solar cell of/Spiro-OMeTAD/Au.
FIG. 1 is a field emission scanning electron micrograph of a perovskite thin film: (a) CH (CH)3NH3PbI3；(b)CH3NH3Pb0.9Co0.1I3WOMF (field-free effect); (c) CH (CH)3NH3Pb0.9Co0.1I3WMF (weak magnetic field effect); (d) CH (CH)3NH3Pb0.9Co0.1I3SMF (high magnetic field effect).
FIG. 2 is a graph of deposition on ZnO @ TiO2XRD pattern of perovskite thin film on nanorod array.
FIG. 3(a) is CH3NH3PbI3，CH3NH3Pb0.9Co0.1I3WOMF (magnetic field-free effect), CH3NH3Pb0.9Co0.1I3WMF (low field effect), CH3NH3Pb0.9Co0.1I3-uv-vis absorption spectrum of SMF (high magnetic field effect) perovskite thin films; FIG. 3(b) is CH3NH3PbI3，CH3NH3Pb0.9Co0.1I3WOMF (magnetic field-free effect), CH3NH3Pb0.9Co0.1I3WMF (low field effect), CH3NH3Pb0.9Co0.1I3Fluorescence spectrum of SMF (high magnetic field effect) perovskite thin film.
FIG. 4 shows a perovskite thin film (a) CH stored in air for 0-72 h3NH3PbI3；(b)CH3NH3Pb0.9Co0.1I3WOMF (field-free effect); (c) CH (CH)3NH3Pb0.9Co0.1I3WMF (weak magnetic field effect); (d) CH (CH)3NH3Pb0.9Co0.1I3-XRD pattern of SMF (strong magnetic field effect); (e) normalized intensity of XRD characteristic diffraction peak corresponding to perovskite (110) crystal face.
FIG. 5 is CH3NH3PbI3，CH3NH3Pb0.9Co0.1I3WOMF (magnetic field-free effect), CH3NH3Pb0.9Co0.1I3WMF (low field effect), CH3NH3Pb0.9Co0.1I3J-V curve of SMF (high magnetic field effect) perovskite solar cell.
FIG. 6 is CH3NH3PbI3，CH3NH3Pb0.9Co0.1I3WOMF (magnetic field-free effect), CH3NH3Pb0.9Co0.1I3WMF (low field effect), CH3NH3Pb0.9Co0.1I3-humidity stability of SMF (high magnetic field effect) perovskite solar cells (a); (b) thermal stability; (c) and (3) light stability.
Example 2
(1) Spin-coating 100 mu L of zinc acetate ethanol solution with the mass concentration of 0.007g/mL on an FTO conductive glass substrate treated by ultraviolet ozone, spin-coating 30s at 3000r/min for 3 times, and then annealing for 15min at 150 ℃; the above process is repeated, the spinning is carried out for 30s according to 3000r/min, the spinning is carried out for 3 times, and the annealing is carried out for 15min at 150 ℃; and finally, spin-coating for 30s at 3000r/min for 3 times, and annealing at 350 ℃ for 45min to obtain the ZnO seed layer with the FTO conductive glass as the substrate.
(2) 100mM Zn salt aqueous solution and polyvinylpyrrolidone aqueous solution with mass concentration of 0.006g/mL are added according to the weight percentage of Zn2+Polyvinylpyrrolidone in a molar ratio of 1: 1, mixing to obtain a mixed solution;
(3) and (3) adding ammonia water into the mixed solution prepared in the step (2), and adjusting the pH value to 11 to obtain a growth solution.
(4) Horizontally inverting the ZnO seed layer prepared in the step (1) and taking the FTO conductive glass as the substrate on a suspension frame, immersing the ZnO seed layer into the growth liquid prepared in the step (3), carrying out water bath reaction at 100 ℃ for 6min, washing the ZnO seed layer with deionized water, and carrying out N2And drying to obtain the substrate.
(5) Putting the substrate taken out in the step 4 on a corundum boat, putting the corundum boat into a tube furnace, and putting the corundum boat in a furnace O2The flow rate is 30ml/min, the temperature is raised from room temperature to 450 ℃ at the heating rate of 5 ℃/min, and the oxidizing sintering is carried out for 20 min.
(6) And (4) naturally cooling the substrate treated in the step (5) to room temperature, repeatedly rinsing the substrate in deionized water at 90 ℃, and airing the substrate in the air to obtain the ZnO nanorod array film taking the FTO conductive glass as the substrate.
(7) Horizontally inverting the ZnO nanorod array film prepared in the step (6) on a suspension bracket, putting the film into a uniformly mixed solution of butyl titanate and isopropanol with the volume ratio of 1mL:110mL, adding 130 muL of deionized water, magnetically stirring for reaction for 7h, taking out, washing with isopropanol, and annealing at 450 ℃ for 30 min. After cooling, the titanium tetrachloride water solution with the volume ratio of 1/900 is treated for 30min by using ice water bath, and then the film is annealed for 30min at 450 ℃ to obtain ZnO @ TiO taking the FTO conductive glass as the substrate2A nanorod array film.
(8) Mixing a certain mass of PbI2Dissolving in DMF/DMSO mixed solvent at volume ratio of 10:1, and magnetically stirring at 70 deg.C for 30 min. Then filtering with a polytetrafluoroethylene filter head with the pore diameter of 0.2 mu M to obtain PbI with the molar concentration of 1.3M2And (3) precursor solution. 0.2222g of CH3NH3I and 0.0093g CoI2Dissolving in isopropanol, stirring at room temperature for 30min to obtain CH3NH3I：CoI2CH with a molar ratio of 12:13NH3I-CoI2An isopropanol solution.
(9) 150 μ L of PbI2Spin coating the precursor solution to the ZnO @ TiO prepared in the step (7) after the ultraviolet ozone treatment2Spin-coating the surface of the nanorod array film for 30s at 3000r/min, soaking in isopropanol for 1min, taking out, spin-drying the excessive liquid, and annealing at 70 deg.C for 30 min. Put into CH3NH3I-CoI2Reacting in isopropanol solution for 80s, taking out, spin-coating for 30s at 3500r/min, and spin-drying the excessive liquid. Then putting the substrate on a heating table, annealing for 4min at 100 ℃, placing 2 magnet blocks of 10cm by 1cm at a position 0.5cm away from the film while annealing, applying a weak magnetic field, and continuously applying the weak magnetic field for 40min after annealing to obtain the film coated with FTO/ZnO @ TiO2Nanorod array is CH of substrate under weak magnetic field effect3NH3Pb1-xCoxI3A film.
(10) Transferring 60 mu L of Spiro-OMeTAD cobalt-based spin-coating liquid drop to the FTO/ZnO @ TiO prepared in the step (9) adsorbed on the vacuum chuck by using a liquid transfer gun2Nanorod array/weak magnetic field CH3NH3Pb1-xCoxI3Spin coating on the film substrate at 3000r/min for 30s to obtain FTO/ZnO @ TiO2Nanorod array/weak magnetic field CH3NH3Pb1-xCoxI3The film is a cobalt-doped Spiro-OMeTAD hole transport layer of the substrate.
(11) Under high vacuum (5X 10)-5Pa) in FTO/ZnO @ TiO2Nanorod array/weak magnetic field CH3NH3Pb1-xCoxI3Thermally evaporating a layer of gold (Au) with the thickness of 80nm on a/Spiro-OMeTAD substrate to be used as a cathode to obtain a structure of FTO/ZnO @ TiO2Nanorod array/weak magnetic field CH3NH3Pb1-xCoxI3Perovskite solar cell of/Spiro-OMeTAD/Au.
The invention utilizes the weak magnetic field effect to modify CH3NH3Pb0.9Co0.1I3The perovskite light absorption layer improves the surface coverage rate, morphology, crystallinity, light absorption performance, surface trap state, defect concentration and air stability of the perovskite thin film. The efficiency of the perovskite solar cell modified by the weak magnetic field effect is improved by 17.6 percent compared with the efficiency of the unmodified cell. In addition, after being left at a high relative humidity of 80% for 288 hours, the unpackaged cells modified by the weak magnetic field action, not applied with the magnetic field action, and applied with the strong magnetic field action maintained 55%, 11%, and 13% of their initial photoelectric conversion efficiency values, respectively; after continuously heating for 68 hours at 60 ℃, the unpackaged cells modified by the action of a weak magnetic field, not applied with a magnetic field and applied with a strong magnetic field respectively maintain 24.8%, 19.2% and 11.3% of the initial photoelectric conversion efficiency value; at 100mW/cm2After 60 minutes of continuous illumination, the unpackaged cells, modified by the action of a weak magnetic field, not subjected to the action of a magnetic field, and subjected to the action of a strong magnetic field, maintained their initial photoelectric conversion efficiency values at 42.5%, 29.3%, and 29.1%, respectively. This shows that the device modified by the weak magnetic field has better humidity stability, thermal stability and light stability than the perovskite solar cell without the magnetic field and the strong magnetic field.
Claims (9)
1. A preparation method of a magnetic perovskite thin film under the action of a weak magnetic field is characterized by comprising the following steps:
1) firstly preparing a ZnO seed layer on an FTO conductive glass substrate, and then preparing to obtain a ZnO nanorod array film;
2) taking the sample prepared in the step 1) as a substrate, horizontally placing the ZnO nanorod array film on a suspension bracket with the surface facing downwards, immersing the ZnO nanorod array film into a mixed solution of butyl titanate and isopropanol, adding deionized water, stirring and reacting for 4-8 h, then washing with isopropanol, annealing at 450 ℃ for at least 30min, immersing the ZnO nanorod array film into a titanium tetrachloride aqueous solution, treating for at least 30min under the condition of ice-water bath, and annealing the film at 450 ℃ for at least 30min to obtain ZnO @ TiO with FTO conductive glass as a substrate2A nanorod array film;
3) will PbI2Dissolving in mixed solvent of DMF and DMSO, and filtering with polytetrafluoroethylene filter head with pore diameter of 0.2 μm to obtain PbI2Precursor solution; adding CoI2、CH3NH3I (MAI) in isopropanol to obtain CH3NH3I-CoI2An isopropanol solution;
4) ZnO @ TiO prepared in the step 2)2After the nano-rod array film is treated by ultraviolet ozone, PbI is added2Spin-coating the precursor solution on the surface, immersing the sample in isopropanol, spin-drying after taking out, annealing at 70 deg.C for at least 30min, and adding CH3NH3I-CoI2Reacting in an isopropanol solution for 40-100 s, taking out, spin-coating, spin-drying, annealing the sample at 80-110 ℃ for 1-5 min, and applying a weak magnetic field effect on the film; continuously applying a weak magnetic field to the film for 10-40 min after annealing to obtain the film coated with FTO/ZnO @ TiO2Nanorod array is CH of substrate under weak magnetic field effect3NH3Pb1-xCoxI3A film; the weak magnetic field is used for applying a magnetic field by placing 2 magnet blocks of 10cm by 1cm at a position 0.1-1 cm away from the film.
2. The method for preparing a low-intensity magnetic perovskite thin film according to claim 1, wherein in the step 3), P isbI2PbI in precursor solution2The molar concentration is 0.5-1.5M, CH3NH3I-CoI2MAI and CoI in isopropanol solution2In a molar ratio of 8: 1-12: 1.
3. the method for preparing a magnetic perovskite thin film under the action of a weak magnetic field according to claim 1, wherein the step 1) is to prepare a ZnO seed layer by taking FTO conductive glass as a substrate, and specifically comprises the following steps: dripping 95-105 mu L of ethanol solution of zinc acetate with the mass concentration of 0.005-0.007 g/mL onto an FTO conductive glass substrate treated by ultraviolet ozone, spin-coating for 30s at 3000r/min for 3 times, and then annealing for 15min at 150 ℃; repeating the spin coating and annealing processes; and (3) annealing at 350 ℃ for 45min after the final spin coating to obtain a ZnO seed layer with the FTO conductive glass as the substrate.
4. The method for preparing a magnetic perovskite thin film under the action of a weak magnetic field according to claim 1, wherein the ZnO nanorod thin film prepared in the step 1) is specifically as follows: adding Zn salt solution of 25-100 mM and polyvinylpyrrolidone water solution of 0.001-0.006 g/mL mass concentration as Zn2+Polyvinylpyrrolidone in a molar ratio of 1: 2-2: 1, mixing to obtain a mixed solution; adding ammonia water, and adjusting the pH value to 9-11 to obtain a growth solution; inverting the surface of the ZnO seed layer downwards, immersing the ZnO seed layer on a suspension frame into the growth liquid, carrying out water bath reaction at 95-105 ℃ for 4-12min, washing the ZnO seed layer with deionized water, and carrying out N2Drying to obtain a substrate; placing the substrate on a corundum boat, placing the corundum boat in a tube furnace, and placing the corundum boat in a furnace2Heating the mixture from room temperature to 350-450 ℃ at a heating rate of 5 ℃/min under the flow of 10-50mL/min, carrying out oxidation sintering for 10-60 min, naturally cooling, repeatedly rinsing with deionized water, and airing in the air to obtain the ZnO nanorod array film taking the FTO conductive glass as the substrate.
5. The method for preparing a low-field-effect magnetic perovskite thin film as claimed in claim 4, wherein the Zn salt is Zn (CH)3COO)2·2H2O、ZnCl2Or Zn (NO)3)2(ii) a The polyvinylpyrrolidone has an average molecular weight of 1,300,000.
6. The method for preparing a magnetic perovskite thin film under the action of a weak magnetic field according to claim 1, wherein the volume ratio of the butyl titanate to the isopropanol in the mixed solution in the step 2) is 1mL:50 mL-1 mL:120mL, and the volume ratio of the deionized water to the butyl titanate is 100-: 1 mL.
7. The method for preparing the weak magnetic field magnetic perovskite thin film according to claim 1, wherein the volume fraction of the titanium tetrachloride aqueous solution in the step 2) is 1/500-1/1000.
8. The method for preparing a low-field-effect magnetic perovskite thin film as claimed in claim 1, wherein ZnO @ TiO is added in the step 4)2150 mu L of PbI is dripped on the surface of the nanorod array film2Spin-coating the precursor solution at 3000r/min for 30s, and immersing the precursor solution in isopropanol for at least 1min after spin-coating; the spin-drying in the step is to spin-dry the excessive liquid for 30s at 3000 r/min.
9. A perovskite solar cell, characterized by being a solar cell using the magnetic perovskite thin film produced by the method according to any one of claims 1 to 8 as a light absorbing layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110499211.4A CN113421978B (en) | 2021-05-08 | 2021-05-08 | Preparation method of magnetic perovskite film with weak magnetic field effect |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110499211.4A CN113421978B (en) | 2021-05-08 | 2021-05-08 | Preparation method of magnetic perovskite film with weak magnetic field effect |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113421978A true CN113421978A (en) | 2021-09-21 |
| CN113421978B CN113421978B (en) | 2023-12-01 |
Family
ID=77712151
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110499211.4A Active CN113421978B (en) | 2021-05-08 | 2021-05-08 | Preparation method of magnetic perovskite film with weak magnetic field effect |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113421978B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105489773A (en) * | 2015-12-30 | 2016-04-13 | 中国科学院上海硅酸盐研究所 | Preparation method for organic/inorganic hybrid perovskite thin film and solar cell |
| JP2016157763A (en) * | 2015-02-24 | 2016-09-01 | 大阪瓦斯株式会社 | Perovskite type solar battery and method for manufacturing the same |
| US20170162809A1 (en) * | 2014-08-19 | 2017-06-08 | Wuhan University | Perovskite thin-film photovoltaic cell and preparation method thereof |
| CN109841740A (en) * | 2019-03-22 | 2019-06-04 | 上海交通大学 | A kind of preparation method of the perovskite solar cell based on nickel oxide hole transmission layer |
| US20190245155A1 (en) * | 2018-01-24 | 2019-08-08 | Stephan HEATH | Methods, products, and systems relating to making, providing, and using nanocrystalline cellulose superlattice solar cells to produce electricity |
| CN112652723A (en) * | 2021-01-06 | 2021-04-13 | 中国计量大学 | Polymer blend modified perovskite solar cell and preparation method thereof |
-
2021
- 2021-05-08 CN CN202110499211.4A patent/CN113421978B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20170162809A1 (en) * | 2014-08-19 | 2017-06-08 | Wuhan University | Perovskite thin-film photovoltaic cell and preparation method thereof |
| JP2016157763A (en) * | 2015-02-24 | 2016-09-01 | 大阪瓦斯株式会社 | Perovskite type solar battery and method for manufacturing the same |
| CN105489773A (en) * | 2015-12-30 | 2016-04-13 | 中国科学院上海硅酸盐研究所 | Preparation method for organic/inorganic hybrid perovskite thin film and solar cell |
| US20190245155A1 (en) * | 2018-01-24 | 2019-08-08 | Stephan HEATH | Methods, products, and systems relating to making, providing, and using nanocrystalline cellulose superlattice solar cells to produce electricity |
| CN109841740A (en) * | 2019-03-22 | 2019-06-04 | 上海交通大学 | A kind of preparation method of the perovskite solar cell based on nickel oxide hole transmission layer |
| CN112652723A (en) * | 2021-01-06 | 2021-04-13 | 中国计量大学 | Polymer blend modified perovskite solar cell and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113421978B (en) | 2023-12-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109216557B (en) | Based on citric acid/SnO2Perovskite solar cell of electron transport layer and preparation method thereof | |
| CN112652723A (en) | Polymer blend modified perovskite solar cell and preparation method thereof | |
| CN107482122B (en) | perovskite solar cell and preparation method | |
| CN109888108B (en) | Biomacromolecule modified perovskite solar cell and preparation method thereof | |
| CN106920880A (en) | A kind of perovskite solar cell and preparation method thereof | |
| CN107146852B (en) | Method for preparing high-efficiency perovskite solar cell in humid air by introducing ammonium salt | |
| CN117858593A (en) | Method for improving perovskite solar cell interface through organic solvent treatment | |
| CN110634965B (en) | All-inorganic perovskite solar cell and preparation method thereof | |
| CN113421978B (en) | Preparation method of magnetic perovskite film with weak magnetic field effect | |
| CN110534654B (en) | Preparation method of quasi-single crystal perovskite film | |
| CN115843189A (en) | Method for improving performance of perovskite solar cell through secondary growth of perovskite crystal grains | |
| CN113584436A (en) | Perovskite thin film based on non-solvent, preparation method and application | |
| CN115353295B (en) | Preparation method of nano-structure charge transport layer and perovskite solar cell | |
| CN115867093B (en) | Preparation method and application of perovskite solar cell graphene electron transport layer | |
| CN113140682A (en) | PVP/PVA modified perovskite solar cell based on ZnO @ ZnSe nanorod array and preparation method thereof | |
| WO2019196025A1 (en) | Azo transparent conductive thin film, and preparation method therefor and application thereof | |
| CN116004229B (en) | Chlorophyll-modified CsPbCl3: yb3+ perovskite film and preparation method and application thereof | |
| CN115843205B (en) | Perovskite film layer preparation method and perovskite solar cell | |
| CN118450728A (en) | Electron transport layer, perovskite solar cell and preparation method thereof | |
| CN114361342A (en) | Preparation method of amorphous-polycrystalline composite electron transport layer for perovskite solar cell | |
| CN114975788A (en) | PH-modified PEDOT (PEDOT-PSS) -PTAA (Polytetrafluoroethylene) composite hole transport film and preparation method and application thereof | |
| CN115249768A (en) | Perovskite thin film transistor and preparation method thereof | |
| CN116779724A (en) | Method for preparing perovskite solar cell with high open-circuit voltage by releasing residual stress by volatile additive | |
| CN117222236A (en) | Large-area perovskite solar cell based on multi-carboxyl potassium salt modification | |
| CN118139502A (en) | Efficient stable perovskite solar cell based on B-site lanthanum ion doping and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |