CN113410387A - Interface-modified organic-inorganic hybrid perovskite solar cell - Google Patents

Interface-modified organic-inorganic hybrid perovskite solar cell Download PDF

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CN113410387A
CN113410387A CN202110525433.9A CN202110525433A CN113410387A CN 113410387 A CN113410387 A CN 113410387A CN 202110525433 A CN202110525433 A CN 202110525433A CN 113410387 A CN113410387 A CN 113410387A
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nickel oxide
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CN113410387B (en
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郭同辉
张京
章泽群
邓志强
赵瑞
俞陆婷
原浩博
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Ningbo University
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    • H—ELECTRICITY
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    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
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    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
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    • H10K85/40—Organosilicon compounds, e.g. TIPS pentacene
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    • Y02E10/549—Organic PV cells

Abstract

The invention discloses an interface-modified organic-inorganic hybrid perovskite solar cell which comprises a conductive glass layer, a nickel oxide layer, a modification layer and a MAPbI (modified MAPbI) which are sequentially distributed in a layered manner3The polycrystalline film, the electron transmission layer and the metal electrode layer, and the material of the modification layer is 3-aminopropyl triethoxysilane. 3-aminopropyl triethoxysilane is used as a modification layer of a nickel oxide layer in the perovskite solar cell with an inverted structure to carry out modification on the nickel oxide layer and MAPbI3The polycrystalline films are blocked, and the nickel oxide layer is inhibited from acting on MAPbI3The decomposition effect of the compound can improve MAPbI under different extreme conditions3Stability of polycrystalline films. In addition, 3-aminopropyltriethoxysilane as a modification layer can improve charge transmission speed, inhibit carrier recombination, and improve short-circuit current and open-circuit voltage of the batteryAll have more obvious promotion.

Description

Interface-modified organic-inorganic hybrid perovskite solar cell
[ technical field ] A method for producing a semiconductor device
The invention relates to an interface-modified organic-inorganic hybrid perovskite solar cell, and belongs to the field of perovskite preparation.
[ background of the invention ]
Compare in traditional single crystal silicon solar cell to and novel film solar cell such as dye-sensitized solar cell, organic solar cell, perovskite solar cell cost is cheaper, and it is simpler to prepare, and technology is more various, can satisfy richer market demand, has very high photoelectric conversion efficiency simultaneously, receives scientific research and industry's high attention. Perovskite materials have been used in solar cells since 2009 with an initial efficiency of 3.8% and until recently, the photovoltaic efficiency has reached 25.2%, with extremely rapid development, creating a history in the photovoltaic field. Perovskite solar cells, although ideal for the next generation of photovoltaic devices, still face the problem of poor stability, which is a key obstacle to their commercialization.
For example, in an inverted perovskite cell, the inorganic hole transport layer NiOxHas well-matched energy level and wide forbidden band with the perovskite photoactive layer, and is widely applied due to the advantages of low cost, easy preparation and good stability. However, as the PVK solution is directly and chemically grown on the hole transport layer, the perovskite is very unstable due to the interface effect, so that the service life of the perovskite battery is severely limited.
[ summary of the invention ]
The invention aims to overcome the defects of the prior art and provide an interface modified organic-inorganic hybrid perovskite solar cell.
The technical scheme adopted by the invention is as follows:
an interface-modified organic-inorganic hybrid perovskite solar cell comprises a conductive glass layer, a nickel oxide layer and a repair layer which are sequentially distributed in a layered mannerDecorative layer, MAPbI3The polycrystalline film, the electron transmission layer and the metal electrode layer, and the material of the modification layer is 3-aminopropyl triethoxysilane.
The invention has the beneficial effects that:
3-aminopropyl triethoxysilane is used as a modification layer of a nickel oxide layer in the perovskite solar cell with an inverted structure to carry out modification on the nickel oxide layer and MAPbI3The polycrystalline films are blocked, and the nickel oxide layer is inhibited from acting on MAPbI3The decomposition effect of the compound can improve MAPbI under different extreme conditions3Stability of polycrystalline films. In addition, 3-aminopropyltriethoxysilane is used as a modification layer, so that the charge transmission speed can be increased, the carrier recombination is inhibited, and the short-circuit current and the open-circuit voltage of the battery are obviously increased.
The preparation method of the nickel oxide layer comprises the following steps: mixing Ni (NO)3)2·6H2Dissolving O in deionized water, stirring, adjusting ph to 10 to form nickel hydroxide colloid particles, sequentially filtering, washing, drying and annealing to obtain nickel oxide nanoparticles, adding the nickel oxide nanoparticles into the deionized water to form nickel oxide spin-coating liquid, spin-coating the nickel oxide spin-coating liquid on a conductive glass layer, and annealing to form a nickel oxide layer;
the preparation method of the modification layer comprises the following steps: dissolving 3-aminopropyltriethoxysilane in isopropanol to form a modified layer stock solution, then mixing the modified layer stock solution with DMF to form a modified layer spin-coating solution, spin-coating the modified layer spin-coating solution on a nickel oxide layer, and then drying to form a modified layer.
In the preparation process of the nickel oxide layer, the drying temperature of the colloid particles of the nickel hydroxide is 80 ℃, and the annealing temperature is 270 ℃.
In the preparation process of the modification layer, the drying temperature of the modification layer spin-coating liquid is 100 ℃.
MAPbI of the invention3The preparation method of the polycrystalline film comprises the following steps: mixing MAI and PbI2Dissolving in DMF and DMSO to form perovskite solution, and spin-coating the perovskite solution on the modification layer to form MAPbI3A polycrystalline film.
According to the invention, 40 mul of 3-aminopropyltriethoxysilane is dissolved in 1ml of isopropanol to form a modified layer stock solution, 50 mul of the modified layer stock solution is taken out and dissolved in 1ml of DMF to form a modified layer spin-coating solution, the spin-coating time of the modified layer spin-coating solution is 30s, and the rotation speed is 4000 rpm.
Other features and advantages of the present invention will be disclosed in more detail in the following detailed description of the invention and the accompanying drawings.
[ description of the drawings ]
The invention is further described below with reference to the accompanying drawings:
FIG. 1 is a graph of EQE and integrated current density for cells of comparative and example embodiments of the invention;
FIG. 2 is a transient photocurrent decay curve of a cell according to comparative example and example of the present invention;
FIG. 3 is a graph showing transient photovoltage decay curves of cells according to comparative examples and examples of the present invention;
FIG. 4 shows MAPbI of the present invention3XRD pattern of polycrystalline film (as prepared);
FIG. 5 shows MAPbI of the present invention3XRD pattern of polycrystalline film (2 days after preparation);
FIG. 6 is a graph showing stability of efficiency of cells according to comparative examples and examples of the present invention;
FIG. 7 is an SEM image of sample four and sample five of the present invention;
FIG. 8 is a graph of the water contact angles of sample four and sample five of the present invention;
FIG. 9 is a photograph of a decay of sample six of the present invention;
FIG. 10 is a photograph of a decay of sample seven of the present invention;
FIG. 11 is a photograph of sample eight of the present invention;
FIG. 12 is a photograph of sample nine of the present invention;
FIG. 13 is an exploded photograph of samples two, three, and ten according to the present invention.
[ detailed description ] embodiments
The technical solutions of the embodiments of the present invention are explained and illustrated below with reference to the drawings of the embodiments of the present invention, but the following embodiments are only preferred embodiments of the present invention, and not all embodiments. Based on the embodiments in the implementation, other embodiments obtained by those skilled in the art without any creative effort belong to the protection scope of the present invention.
In the following description, the appearances of the indicating orientation or positional relationship such as the terms "inner", "outer", "upper", "lower", "left", "right", etc. are only for convenience in describing the embodiments and for simplicity in description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and are not to be construed as limiting the present invention.
Comparative example:
the embodiment provides an organic-inorganic hybrid perovskite solar cell, and a preparation method thereof is as follows:
step S1: 0.6mol of Ni (NO)3)2·6H2O was dissolved in 100ml of deionized water and stirred, and then a 10M aqueous solution of sodium hydroxide was added dropwise to adjust ph to 10, to form colloidal particles of nickel hydroxide. Filtering out colloid particles of nickel hydroxide, washing with deionized water twice, drying at 80 ℃, and annealing at 270 ℃ for 2 hours to obtain nickel oxide nano-particle powder. And adding the nickel oxide nanoparticles into deionized water to form a nickel oxide spin-coating liquid, wherein the concentration of the nickel oxide nanoparticles is 25 mg/ml. And spin-coating the nickel oxide spin-coating solution on the conductive glass layer, and annealing to form a nickel oxide layer, wherein the spin-coating speed is 2000rpm, the spin-coating time is 30s, the annealing temperature is 130 ℃, and the annealing time is 20 min.
Step S2: MAPbI was reacted under nitrogen atmosphere3Solution (MAPbI)3Concentration 1M, solvent DMF and DMSO in a volume ratio of 7: 3) was spin coated onto the nickel oxide layer at 2800rpm for 30s, followed by annealing at 95 ℃ to form MAPbI3A polycrystalline film.
Step S3: a chlorobenzene solution of PCBM (PCBM concentration 20mg/ml) was spin-coated to MAPbI at 2500rpm3Spin-coating on the polycrystalline film for 30s, annealing at 40 deg.C for 5min to form PCBM film, and supersaturating 120 μ l BCPSpin-coating chlorobenzene solution onto PCBM film at 5000rpm for 30s, annealing at 65 deg.C for 5min, and finally MAPbI3An electron transport layer is formed on the polycrystalline film.
Step S4: and a silver electrode with the thickness of 80nm is evaporated on the electron transport layer.
Finally, the organic-inorganic hybrid perovskite solar cell of the comparative example comprises a conductive glass layer, a nickel oxide layer and a MAPbI which are sequentially distributed in a layered manner3Polycrystalline film, electron transport layer and metal electrode layer.
Example (b):
the present embodiment differs from the comparative embodiment in that there is a step S1' between steps S1 and S2.
Step S1': dissolving 40 mul of 3-aminopropyltriethoxysilane in 1ml of isopropanol to form a modified layer stock solution, then taking out 50 mul of the modified layer stock solution and dissolving in 1ml of DMF to form a modified layer spin-coating solution. And spin-coating the modifying layer spin-coating liquid on the nickel oxide layer for 30s at the rotation speed of 4000rpm, and annealing at 100 ℃ for 5min to completely volatilize the isopropanol so as to form the modifying layer on the nickel oxide layer.
Correspondingly, in step S2 of this embodiment, MAPbI3Spin coating the solution on the modifying layer, and annealing to form MAPbI3A polycrystalline film.
Finally, the organic-inorganic hybrid perovskite solar cell of the comparative example comprises a conductive glass layer, a nickel oxide layer, a modification layer and a MAPbI which are sequentially distributed in a layered manner3Polycrystalline film, electron transport layer and metal electrode layer.
In a room temperature environment, a xenon lamp is used for simulating sunlight, and the light intensity is 95.6mW/cm2Photoelectric performance tests (effective illumination area of 0.07 cm) were carried out on the organic-inorganic hybrid perovskite solar cells in comparative example and example, respectively (model of solar simulator: Newport 91192A)2) The test results are shown in Table 1.
TABLE 1
Figure BDA0003061522980000041
It can be seen that by placing 3-aminopropyltriethoxysilane as a modification layer between the nickel oxide layer and the MAPbI3Among the polycrystalline films, the polycrystalline film has good promotion effect on the short-circuit current, the open-circuit voltage and the filling factor of the battery, and particularly the promotion of the open-circuit voltage is obvious.
The effect of the modification layer on improving the short-circuit current density is limited, and in order to eliminate the influence of experimental errors, the external quantum efficiency EQE and the integrated current density of the comparative example and the comparative example are respectively tested, which is shown in fig. 1. It can be seen that the EQE of the solar cell in the example is significantly improved compared to the comparative example in the range of 350nm to 700nm, while the EQE of the example and the comparative example are relatively flat or slightly higher in the example than in the comparative example in the ranges of 300nm to 350nm and 700 and 800 nm. Correspondingly, the integrated current density in the embodiment is slightly higher than that in the comparative embodiment, and the improvement effect of the 3-aminopropyl triethoxysilane on the short-circuit current density is relatively met, so that the improvement effect of the 3-aminopropyl triethoxysilane on the short-circuit current density is proved.
Referring to fig. 2, the TPC response time is reduced from 8.3 mus to 5.7 mus through the modification effect of 3-aminopropyltriethoxysilane on the nickel oxide layer, and the 3-aminopropyltriethoxysilane is proved to have a good promotion effect on the extraction and transmission of carriers.
Referring to fig. 3, the response time of the TPV is increased from 0.24ms to 0.56ms through the modification effect of the 3-aminopropyltriethoxysilane on the nickel oxide layer, and the 3-aminopropyltriethoxysilane is proved to have an obvious inhibition effect on carrier recombination.
To the MAPbI3Testing the stability of the polycrystalline film, and respectively preparing 3 MAPbI blocks3Polycrystalline film sample, sample one is a conductive glass layer and MAPbI distributed in layers3A polycrystalline film, a second sample is a conductive glass layer, a nickel oxide layer and MAPbI which are distributed in a layered manner3A polycrystalline film, wherein a sample III is a conductive glass layer, a nickel oxide layer, a modification layer and MAPbI which are distributed in a layered manner3The material of the modification layer of the polycrystalline film sample III is 3-aminopropyl triethoxyA silane.
Referring to FIG. 4, MAPbI in sample one, sample two and sample three, respectively, are shown from top to bottom3XRD patterns of polycrystalline films (as prepared) revealed the presence of significant MAPbI in sample one, sample two and sample three3Characteristic peaks of polycrystalline film. Referring to FIG. 5, sample one, sample two and sample three were under 2 days elapsed, 30% RH and 25 deg.C conditions, although MAPbI for three samples3Polycrystalline films all show PbI2But in sample two, distinct hetero-peaks appeared at the three positions of 14.1 °,28.2 ° and 31.7 ° due to the generation of a considerable amount of (MA)4PbI6·2H2And O. In contrast, no significant peaks were evident at these positions in sample three, indicating that the nickel oxide layer and MAPbI were present3Under the condition that the polycrystalline films are in direct contact, the nickel oxide layer is opposite to MAPbI3The polycrystalline film has obvious decomposition effect, and the 3-aminopropyl triethoxysilane can effectively block the nickel oxide layer and the MAPbI3Polycrystalline film, thereby to MAPbI3The polycrystalline film plays a role in protection. See MAPbI in FIGS. 4 and 53Photographs of polycrystalline films, showing MAPbI in samples one and three over a 2 day period3The polycrystalline film always remained darker in color, but MAPbI in sample two3The color of the polycrystalline film is obviously changed from dark to light, and the polycrystalline film conforms to the curve change of XRD.
Referring to fig. 6, the stability of the efficiency of the comparative example and the example under different conditions was compared.
In a of fig. 6, the cell efficiency in the example was still 90% of the initial efficiency after the cell efficiency was decreased for 500 hours under 30% RH, 25 c and the dark state condition, but the cell efficiency in the comparative example was only 79% of the initial efficiency.
In fig. 6 b, the cell efficiency in the comparative example has decayed to 0 over 8h under 85% RH, 20 c and dark state conditions, as opposed to the cell efficiency in the example still maintaining around 50% of the initial efficiency over 12 h.
In fig. 6 c, the cell efficiency in the comparative example was only 63% of the initial efficiency over 35h under 20% RH, 20 ℃ and AM1.5 light conditions, while the cell efficiency in the example was still 82% of the initial efficiency.
In d of fig. 6, the cell efficiency in the comparative example was only 30% of the initial efficiency over 35h under 20% RH, 85 ℃ and AM1.5 dark state conditions, while the cell efficiency in the example was still 67% of the initial efficiency.
As can be seen from the stability tests, under three extreme conditions of humidity, illumination and high temperature, the 3-aminopropyl triethoxysilane can be used for MAPbI3The polycrystalline film plays a good role in protection, thereby stabilizing the efficiency of the battery.
In this embodiment, a fourth sample and a fifth sample are prepared, where the fourth sample is a conductive glass layer and a nickel oxide layer that are arranged in a layered manner, and the fifth sample is a conductive glass layer, a nickel oxide layer, and a modification layer that are arranged in a layered manner. Referring to fig. 7 and 8, it can be seen that the modification layer does not significantly affect the surface topography of the nickel oxide layer. However, the 3-aminopropyltriethoxysilane enables the water contact angle to be increased from 11.4 degrees to 30.4 degrees, the hydrophobic property of the 3-aminopropyltriethoxysilane is effectively improved, and therefore, the moisture to MAPbI is reduced3Decomposition effect of polycrystalline film.
Reference example 1:
in the present reference example, sample six and sample seven were prepared, in which sample six was a conductive glass layer, a nickel oxide layer and CsPbI which were layered2A Br polycrystalline film, wherein a sample seven is a conductive glass layer, a nickel oxide layer, a modification layer and CsPbI which are distributed in a layered manner2The material of the modification layer of the Br polycrystalline film is still 3-aminopropyl triethoxysilane.
Referring to FIGS. 9 and 10, CsPbI was measured in samples six and seven over a period of forty minutes at 25 deg.C and 30% RH2The Br polycrystalline film is quickly decomposed until the Br polycrystalline film is completely decomposed, and the 3-aminopropyl triethoxysilane cannot react with CsPbI2The Br polycrystalline film plays a role in protection.
Reference example 2:
in the present reference example, sample eight and sample nine were prepared, in which sample eight was a conductive glass layer, a nickel oxide layer, and CsPbBr in layered distribution3A polycrystalline film, wherein a sample nine is a conductive glass layer, a nickel oxide layer, a modification layer and CsPbBr which are distributed in a layered manner3The material of the polycrystalline film and the modification layer is still 3-aminopropyl trisAn ethoxysilane.
Referring to FIGS. 11 and 12, it can be seen that CsPbBr, whether sample eight or sample nine3Polycrystalline films were not efficiently formed, 3-aminopropyltriethoxysilane for CsPbBr3The film formation of polycrystalline film cannot be effectively facilitated.
Reference example 3:
to demonstrate that 3-aminopropyltriethoxysilane is acting on MAPbI3The reference example prepares ten samples, which are also a conductive glass layer, a nickel oxide layer, a modification layer and MAPbI which are distributed in a layered manner3The polycrystalline film is different from the third sample in that the material of the modification layer of the tenth sample is trifluoropropyltriethoxysilane.
The samples II, III and eleven which are just prepared are firstly kept stand for 50h under the conditions of 25 ℃, 50% RH and dark state, and then kept stand for 0.5h under the conditions of 25 ℃, 80% RH and AM1.5 illumination. Referring to FIG. 13, it can be seen that under the extreme conditions described above, there was little change in MAPbI in sample three and MAPbI in sample two3The polycrystalline film is decomposed to a certain degree, and the 3-aminopropyl triethoxysilane is proved to be applied to MAPbI3Protective effect of polycrystalline film. In contrast, MAPbI in sample ten3The polycrystalline film generates more obvious decomposition, and the decomposition degree is higher than that of the second sample, so that the trifluoropropyltriethoxysilane is proved to be the most modified layer for MAPbI3The polycrystalline film is rather damaged further and cannot be used as a material for a decorative layer.
While the invention has been described with reference to specific embodiments thereof, it will be understood by those skilled in the art that the invention is not limited thereto, and may be embodied in many different forms without departing from the spirit and scope of the invention as set forth in the following claims. Any modification which does not depart from the functional and structural principles of the present invention is intended to be included within the scope of the claims.

Claims (6)

1. An interface-modified organic-inorganic hybrid perovskite solar cell is characterized by comprising a conductive glass layer, a nickel oxide layer, a titanium oxide layer and a titanium oxide layer which are sequentially distributed in a layered manner,Modified layer, MAPbI3The polycrystalline film, the electron transmission layer and the metal electrode layer, and the material of the modification layer is 3-aminopropyl triethoxysilane.
2. The interface-modified organic-inorganic hybrid perovskite solar cell according to claim 1,
the preparation method of the nickel oxide layer comprises the following steps: mixing Ni (NO)3)2·6H2Dissolving O in deionized water, stirring, adjusting ph to 10 to form nickel hydroxide colloid particles, sequentially filtering, washing, drying and annealing to obtain nickel oxide nanoparticles, adding the nickel oxide nanoparticles into the deionized water to form nickel oxide spin-coating liquid, spin-coating the nickel oxide spin-coating liquid on a conductive glass layer, and annealing to form a nickel oxide layer; the preparation method of the modification layer comprises the following steps: dissolving 3-aminopropyltriethoxysilane in isopropanol to form a modified layer stock solution, then mixing the modified layer stock solution with DMF to form a modified layer spin-coating solution, spin-coating the modified layer spin-coating solution on a nickel oxide layer, and then drying to form a modified layer.
3. The interface-modified organic-inorganic hybrid perovskite solar cell as claimed in claim 2, wherein the drying temperature of the colloidal particles of nickel hydroxide is 80 ℃ and the annealing temperature is 270 ℃ during the preparation of the nickel oxide layer.
4. The interface-modified organic-inorganic hybrid perovskite solar cell as claimed in claim 2, wherein the drying temperature of the spin coating liquid of the modification layer is 100 ℃ during the preparation of the modification layer.
5. The interface-modified organic-inorganic hybrid perovskite solar cell of claim 4, wherein MAPbI3The preparation method of the polycrystalline film comprises the following steps: mixing MAI and PbI2Dissolving in DMF and DMSO to form perovskite solution, and spin-coating the perovskite solution on the modification layer to form MAPbI3A polycrystalline film.
6. The interface-modified organic-inorganic hybrid perovskite solar cell of claim 2, wherein 40 μ l of 3-aminopropyltriethoxysilane is dissolved in 1ml of isopropanol to form a modified layer dope, and then 50 μ l of the modified layer dope is taken out and dissolved in 1ml of DMF to form a modified layer spin-coating solution, wherein the spin-coating time of the modified layer spin-coating solution is 30s, and the rotation speed is 4000 rpm.
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Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104576930A (en) * 2015-01-06 2015-04-29 宁波大学 Perovskite solar cell and manufacturing method of perovskite solar cell
CN105870360A (en) * 2016-04-28 2016-08-17 宁波大学 Perovskite solar cell and preparation method thereof
WO2018009712A2 (en) * 2016-07-06 2018-01-11 Nutech Ventures Monolithic integration of hybrid perovskite single crystals with silicon for highly sensitive x-ray detectors
CN107919439A (en) * 2017-11-15 2018-04-17 武汉理工大学 A kind of perovskite solar cell of stabilization and preparation method thereof
CN109148697A (en) * 2018-09-21 2019-01-04 北京恒信卓元科技有限公司 A kind of preparation method of perovskite solar battery
CN111223990A (en) * 2019-11-29 2020-06-02 西南石油大学 Inverted perovskite solar cell containing alkali metal halide hole modification layer and preparation method
WO2020163838A1 (en) * 2019-02-10 2020-08-13 Arizona Board Of Regents On Behalf Of The University Of Arizona Compositions and methods for reducing defects in perovskite-oxide interface
CN112080276A (en) * 2020-09-30 2020-12-15 上海应用技术大学 Preparation method of cesium-lead halogen perovskite nanocrystalline thin film with high luminous efficiency

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104576930A (en) * 2015-01-06 2015-04-29 宁波大学 Perovskite solar cell and manufacturing method of perovskite solar cell
CN105870360A (en) * 2016-04-28 2016-08-17 宁波大学 Perovskite solar cell and preparation method thereof
WO2018009712A2 (en) * 2016-07-06 2018-01-11 Nutech Ventures Monolithic integration of hybrid perovskite single crystals with silicon for highly sensitive x-ray detectors
CN107919439A (en) * 2017-11-15 2018-04-17 武汉理工大学 A kind of perovskite solar cell of stabilization and preparation method thereof
CN109148697A (en) * 2018-09-21 2019-01-04 北京恒信卓元科技有限公司 A kind of preparation method of perovskite solar battery
WO2020163838A1 (en) * 2019-02-10 2020-08-13 Arizona Board Of Regents On Behalf Of The University Of Arizona Compositions and methods for reducing defects in perovskite-oxide interface
CN111223990A (en) * 2019-11-29 2020-06-02 西南石油大学 Inverted perovskite solar cell containing alkali metal halide hole modification layer and preparation method
CN112080276A (en) * 2020-09-30 2020-12-15 上海应用技术大学 Preparation method of cesium-lead halogen perovskite nanocrystalline thin film with high luminous efficiency

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
GUANG YANG等: "Interface engineering in planar perovskite solar cells: energy level alignment, perovskite morphology control and high performance achievement", 《JOURNAL OF MATERIALS CHEMISTRY A》 *
QIQI HE等: "Room-Temperature and Solution-Processable Cu-Doped Nickel Oxide Nanoparticles for Efficient Hole-Transport Layers of Flexible Large-Area Perovskite Solar Cells", 《APPLIED MATERIALS & INTERFACES》 *

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