CN113406881B - Semiconductor heat treatment equipment and control method for oxygen content in loading and unloading chamber thereof - Google Patents
Semiconductor heat treatment equipment and control method for oxygen content in loading and unloading chamber thereof Download PDFInfo
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- CN113406881B CN113406881B CN202110390682.1A CN202110390682A CN113406881B CN 113406881 B CN113406881 B CN 113406881B CN 202110390682 A CN202110390682 A CN 202110390682A CN 113406881 B CN113406881 B CN 113406881B
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- 239000001301 oxygen Substances 0.000 title claims abstract description 262
- 229910052760 oxygen Inorganic materials 0.000 title claims abstract description 262
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims abstract description 258
- 238000000034 method Methods 0.000 title claims abstract description 61
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 238000010438 heat treatment Methods 0.000 title claims abstract description 8
- 238000010926 purge Methods 0.000 claims abstract description 219
- 238000006243 chemical reaction Methods 0.000 claims abstract description 39
- 239000011261 inert gas Substances 0.000 claims description 45
- 238000004422 calculation algorithm Methods 0.000 claims description 21
- 238000001914 filtration Methods 0.000 claims description 10
- 238000001514 detection method Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims 1
- 230000008859 change Effects 0.000 abstract description 19
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- 230000008569 process Effects 0.000 description 24
- 230000001276 controlling effect Effects 0.000 description 12
- 238000004590 computer program Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 238000010408 sweeping Methods 0.000 description 3
- 230000004069 differentiation Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B11/00—Automatic controllers
- G05B11/01—Automatic controllers electric
- G05B11/36—Automatic controllers electric with provision for obtaining particular characteristics, e.g. proportional, integral, differential
- G05B11/42—Automatic controllers electric with provision for obtaining particular characteristics, e.g. proportional, integral, differential for obtaining a characteristic which is both proportional and time-dependent, e.g. P.I., P.I.D.
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The embodiment of the invention provides a semiconductor heat treatment device and a control method of oxygen content in a loading and unloading chamber thereof, wherein the method comprises the following steps: acquiring the current target oxygen content of the loading and unloading chamber and detecting the oxygen content; determining a first deviation value according to the detected oxygen content and the target set oxygen content; determining an initial purge flow according to the first offset value; acquiring a pressure flow conversion coefficient and a current pressure value of the loading and unloading chamber, and converting the pressure value into a reference purge flow according to the pressure flow conversion coefficient; determining a second deviation value according to the initial purge flow and the reference purge flow; and determining a final purging flow according to the second deviation value, and purging the loading and unloading chamber by adopting the final purging flow to control the oxygen content. According to the embodiment of the invention, the oxygen content control is realized by adapting to the change in the chamber, the oxygen content and the pressure value in the chamber are considered, the accuracy and timeliness of the oxygen content control in the chamber are improved, and the processing quality of the silicon wafer is ensured.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to semiconductor heat treatment equipment and a control method for oxygen content in a loading and unloading chamber of the semiconductor heat treatment equipment.
Background
In a semiconductor thermal processing apparatus, having a chamber (LA) for loading and/or unloading a silicon wafer, micro-oxygen, micro-positive pressure control of the chamber is a key performance index.
During the transport of the silicon wafer, an unnecessary oxide layer is generated under the influence of oxygen molecules in the chamber, and the oxygen content in the chamber can be controlled by adopting a purging means of inert gas (such as high-purity nitrogen) under the closed-loop control of an oxygen analyzer and a gas mass flow controller (MFC, mass Flow Controller). Meanwhile, in order to avoid that the pressure change of the chamber exceeds the safety range in the micro-oxygen control process, the pressure in the loading and unloading chamber needs to be controlled, so that the reliable operation of the micro-positive pressure system is ensured under the condition of good micro-oxygen control.
In the oxygen control process, the chamber is purged by inert gas with a certain flow, oxygen is discharged out of the chamber, so that the oxygen content of the chamber meets the process requirement, meanwhile, the micro positive pressure of the chamber is maintained, the external air can be effectively prevented from entering the chamber by the micro positive pressure, and the oxygen content control effect is ensured.
However, the existing scheme is a hysteresis window control mode, which is generally provided with two modes of large-flow oxygen control and small-flow oxygen control, namely, one of the flows is selected to control oxygen when reaching a certain critical point, so that the mode is solidified, and the mode is difficult to adapt to the change in the chamber in time.
Disclosure of Invention
In view of the above problems, it has been proposed to provide a method of controlling the oxygen content in a semiconductor thermal processing apparatus loading and unloading chamber thereof, which overcomes or at least partially solves the above problems, comprising:
a method of controlling oxygen content in a load lock chamber of a semiconductor thermal processing apparatus, comprising:
acquiring the current target oxygen content and detecting the oxygen content of the loading and unloading chamber;
determining a first deviation value based on the detected oxygen content and the target oxygen content;
determining an initial purge flow according to the first offset value;
acquiring a pressure flow conversion coefficient and a current pressure value of the loading and unloading chamber, and converting the pressure value into a reference purge flow according to the pressure flow conversion coefficient;
determining a second offset value based on the initial purge flow and the reference purge flow;
and determining a final purging flow according to the second deviation value, and purging the loading and unloading chamber by adopting the final purging flow so as to control the oxygen content.
Optionally, the determining the initial purge flow according to the first deviation value includes:
based on the current first deviation value and the historical first deviation value, calculating by adopting a preset first PID algorithm, and determining the initial purge flow;
the determining the final purge flow according to the second deviation value includes:
and calculating by adopting a preset second PID algorithm based on the current second deviation value and the historical second deviation value, and determining the final purge flow.
Optionally, the formula of the first PID algorithm is:
u n ＝u n-1 +Δu
Δu＝K p *(e n -e n-1 )+K i *e n +K d *(e n -2e n-1 +e n-2 )
wherein ,un U is the current initial purge flow n-1 For the last initial purge flow, Δu is the increment of the initial purge flow, e n E being the current first deviation value n-1 E is the last first deviation value n-2 For the first deviation value, K p Is a proportionality coefficient, K i As integral coefficient, K d Is an integral coefficient;
and/or, the formula of the second PID algorithm is:
u′ n ＝u′ n-1 +Δu′
Δu′＝K p *(e′ n -e′ n-1 )+K i *e′ n +K d *(e′ n -2e′ n-1 +e′ n-2 )
wherein ,u′n For the current final purge flow, u' n-1 For the last final purge flow, Δu 'is the increment of the final purge flow, e' n E 'is the current second deviation value' n-1 E 'is the last second deviation value' n-2 For the last time beforeThe second deviation value, K p Is a proportionality coefficient, K i As integral coefficient, K d Is an integral coefficient.
Optionally, before said purging said chamber with said final purge flow, further comprising:
and when the difference value between the current final purge flow and the last final purge flow is smaller than or equal to a preset threshold value, replacing the current final purge flow with the last final purge flow.
Optionally, before said purging said chamber with said final purge flow, further comprising:
the final purge flow value is filtered using the following formula:
y n ＝a 1 *y dn +a 2 *y n-1 +a 1 *y n-2
wherein ,yn For the final purge flow value, y dn For the final purge flow value, y, without filter treatment n-1 Y is the last final purge flow value n-2 A for the final purge flow value previously output 1 For filtering parameters, a 2 Is a filtering parameter.
Optionally, the obtaining the target oxygen content of the load lock chamber comprises:
obtaining the target oxygen content according to the following formula:
At s' main When < sv-d, s main ＝s′ main +t*rate；
At s' main At > sv-d, s main ＝s′ main -t*rate；
At sv-d < s' main When < sv+d, s main ＝sv；
wherein ,smain For the target oxygen content, s' main For the currently set oxygen content, sv is the input oxygen content, d is the deviation between the currently set oxygen content and the input oxygen content, t is the calculation period, and rate isStep rate.
Optionally, the converting the pressure value into the reference purge flow according to the pressure-flow conversion coefficient includes:
performing interval definition on the pressure value to obtain the pressure value after interval definition;
and converting the pressure value after interval definition into the reference purge flow according to the pressure flow conversion coefficient.
Optionally, the interval defining the pressure value includes:
updating the pressure value to a first pressure threshold value when the pressure value is greater than the first pressure threshold value;
updating the pressure value to a second pressure threshold value when the pressure value is smaller than the second pressure threshold value;
wherein the second pressure threshold is less than the first pressure threshold.
Optionally, the loadlock chamber is purged with an inert gas.
A semiconductor heat treatment apparatus comprising: the device comprises a controller and a loading and unloading chamber, wherein the loading and unloading chamber is provided with a detection device and a purging device,
The detection device is used for detecting the oxygen content and the pressure value in the loading and unloading chamber;
the controller is used for acquiring the current target oxygen content of the loading and unloading chamber and detecting the oxygen content; determining a first deviation value based on the detected oxygen content and the target oxygen content; determining an initial purge flow according to the first offset value; acquiring a pressure flow conversion coefficient and a current pressure value of the chamber, and converting the pressure value into a reference purge flow according to the pressure flow conversion coefficient; determining a second offset value based on the initial purge flow and the reference purge flow; and determining a final purging flow according to the second deviation value, and controlling the purging device to purge the loading and unloading chamber by adopting the final purging flow so as to control the oxygen content.
The embodiment of the invention has the following advantages:
in the embodiment of the invention, the current target oxygen content and the detected oxygen content of the loading and unloading chamber are obtained, the first deviation value is determined according to the detected oxygen content and the target oxygen content, the initial purging flow is determined according to the first deviation value, then the pressure flow conversion coefficient and the current pressure value of the loading and unloading chamber can be obtained, the pressure value is converted into the reference purging flow according to the pressure flow conversion coefficient, the second deviation value is determined according to the initial purging flow and the reference purging flow, the final purging flow is determined according to the second deviation value, and the loading and unloading chamber is purged by adopting the final purging flow so as to control the oxygen content, thereby realizing the oxygen content control by changing in the self-adaption chamber, considering the oxygen content and the pressure value in the chamber, improving the accuracy and timeliness of the oxygen content control in the chamber, and ensuring the processing quality of semiconductors.
Drawings
In order to more clearly illustrate the technical solutions of the present invention, the drawings that are needed in the description of the present invention will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort to a person skilled in the art.
FIG. 1a is a schematic illustration of a variation in oxygen content according to an embodiment of the present invention;
FIG. 1b is a schematic illustration of another variation in oxygen content provided by an embodiment of the present invention;
FIG. 1c is a schematic illustration of another variation in oxygen content provided by an embodiment of the present invention;
FIG. 2 is a flow chart of the method for controlling the oxygen content in a load lock chamber of a semiconductor thermal processing apparatus according to one embodiment of the present invention;
FIG. 3 is a flow chart illustrating steps of a method for controlling oxygen content in a load lock chamber of a semiconductor thermal processing apparatus according to one embodiment of the present invention;
FIG. 4 is a schematic diagram of a PID control according to an embodiment of the invention;
FIG. 5 is a schematic diagram of another PID control provided by an embodiment of the invention;
FIG. 6a is a schematic illustration of another variation in oxygen content provided by an embodiment of the present invention;
FIG. 6b is a schematic illustration of another variation in oxygen content provided by an embodiment of the present invention;
FIG. 6c is a schematic illustration of another variation in oxygen content provided by an embodiment of the present invention.
Detailed Description
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description. It will be apparent that the described embodiments are some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In practical application, two modes of high-flow oxygen control and low-flow oxygen control can be provided, for example, a high-flow oxygen control MFC adopts inert gas of 1000SLM/Min, an exhaust valve is opened, a low-flow oxygen control MFC adopts inert gas of 500SLM/Min, and the exhaust valve is closed.
In the oxygen control process of a load lock chamber for loading and/or unloading a silicon wafer, as shown in fig. 1a, the ordinate is the oxygen content (LA oxygen content) of the chamber, the abscissa is time (T), the graph represents the relationship between oxygen content and time, the oxygen content is 10ppm as a target value, which can reach the process requirement, and the oxygen content is 800ppm as the window upper limit value of the small flow oxygen control, specifically:
(1) Area: the oxygen content in the chamber was initially atmospheric oxygen content, and was varied from atmospheric oxygen content to a micro oxygen content of 10ppm using high flow oxygen control.
(2) Area: in the process of conveying the silicon wafer, oxygen enters the cavity due to the opening of the wafer conveying port or the lifting boat, the oxygen content is changed from less than 10ppm of micro oxygen content to 800ppm, and small flow oxygen control is adopted.
(3) Area: at oxygen levels greater than 800ppm, a high flow rate of oxygen control was used until the oxygen level returned to 10ppm.
(4) In the region, when the oxygen content is 10ppm or less, the oxygen content is gradually reduced to about 5ppm by switching the small flow rate to control oxygen.
However, the above manner is a hysteresis window control mode, that is, when a certain critical point is reached, one of the flows is selected to control oxygen, so that the oxygen is solidified, and it is difficult to adapt to the change in the chamber in time, specifically, at least the following disadvantages exist:
1. waste of inert gas flow
In the case of good sealing, the target value of oxygen content is 10ppm, the fixed small flow rate oxygen is 500SLM/min, which blows oxygen content to 5ppm or less, to maintain the 10ppm oxygen content required by the process, the actual flow rate is less than 500SLM/min, resulting in waste of inert gas flow.
As in fig. 1b, the left ordinate represents oxygen content, the right ordinate represents inert gas flow, the abscissa represents time, the dashed line represents the change in oxygen content with time, and the solid line represents the output change in inert gas flow.
When the oxygen content (dotted line) reaches 10ppm, the flow rate of the inert gas (solid line) is switched from 1000SLM/min to 500SLM/min and is kept unchanged, the oxygen content is finally kept at about 3ppm, the flow rate of the inert gas exceeds the actual demand, the flow rate of the inert gas is smaller than 500SLM/min, and the process target is kept at about 10 ppm.
2. When oxygen content suddenly changes, the recovery can not be timely carried out
Because the oxygen content is less than 800ppmm, the inert gas flow is kept constant at a fixed small flow, the inert gas purging effect cannot counteract the rising speed of the oxygen content, and the oxygen content cannot be quickly restored to the process requirement.
As in fig. 1c, the left ordinate represents oxygen content, the right ordinate represents inert gas flow, the abscissa represents time, the dashed line represents the change in oxygen content with time, and the solid line represents the output change in inert gas flow.
Wherein, the oxygen content is at the point a, the machine is lifted, and the oxygen content is continuously increased as the inert gas flow rate is 500SLM/min and is kept unchanged; until point c, the oxygen content is more than 800ppm, and the inert gas flow is switched to 1000SLM/min; under an inert gas purge of 1000SLM/min, the oxygen content of the loading and unloading chamber is gradually reduced until the oxygen content is restored to 10ppm at the point b, and the inert gas flow is switched to 500SLM/min.
3. Under the condition of non-ideal sealing or small target value of oxygen content, it is difficult to reach the process requirement
Under the condition of non-ideal sealing or very small oxygen content target value, due to a fixed inert gas flow mode, the inert gas flow cannot be adjusted timely according to the change of the oxygen content, and the oxygen content cannot be reduced to be lower by inert gas purging, so that the oxygen content cannot meet the process requirement.
Based on the above, the embodiment of the invention proposes that the current target oxygen content and the detected oxygen content of the loading and unloading chamber are obtained, the first deviation value is determined according to the detected oxygen content and the target oxygen content, the initial purging flow is determined according to the first deviation value, then the pressure flow conversion coefficient and the current pressure value of the loading and unloading chamber can be obtained, the pressure value is converted into the reference purging flow according to the pressure flow conversion coefficient, the second deviation value is determined according to the initial purging flow and the reference purging flow, the final purging flow is determined according to the second deviation value, and the loading and unloading chamber is purged by adopting the final purging flow so as to control the oxygen content, thereby realizing the oxygen content control by changing in the self-adaptive chamber, considering the oxygen content and the pressure value in the chamber, improving the accuracy and the timeliness of the oxygen content control in the chamber, and guaranteeing the processing quality of semiconductors.
Referring to fig. 2, a flowchart illustrating a method for controlling oxygen content in a load chamber of a semiconductor thermal processing apparatus according to an embodiment of the present invention may specifically include the following steps:
step 201, obtaining the current target oxygen content and the detected oxygen content of the loading and unloading chamber;
in the process of controlling the oxygen content of the loading and unloading chamber, the currently set target oxygen content can be obtained as the current oxygen content control target, and in order to adapt to the change of the oxygen content in the loading and unloading chamber in time, the oxygen content of the loading and unloading chamber can be detected in real time, so that the current detected oxygen content is obtained.
In an embodiment of the present invention, an initial input oxygen content value (i.e., a final target for oxygen content control) may be obtained, and then a step algorithm may be used to set the oxygen content (i.e., set the target oxygen content), so as to gradually reach the target at a certain rate, thereby avoiding a drastic change in output due to an excessively large adjustment difference.
Based thereon, obtaining a target oxygen content of the loadlock chamber may include:
the target oxygen content is obtained according to the following formula:
at s' main When < sv-d, s main ＝s′ main +t*rate；
At s' main At > sv-d, s main ＝s′ main -t*rate；
At sv-d < s' main When < sv+d, s main ＝sv；
wherein ,s′main For the currently set oxygen content s main For the target oxygen content (i.e., as the oxygen content to be set), sv is the initially input oxygen content, d is the deviation between the currently set oxygen content and the initially input oxygen content, t is the preset calculation period, and rate is the preset step rate.
In a specific implementation, the input initial oxygen content sv may be obtained and the currently set oxygen content s 'may be obtained' main At the currently set oxygen content s' main When the deviation from the initially supplied oxygen content sv is small, i.e. the currently set oxygen content s' main Within sv.+ -. D, the current target oxygen content s is determined main Equal to the initial oxygen content sv.
At the currently set oxygen content s' main When the deviation from the initially supplied oxygen content sv is large, i.e. the currently set oxygen content s' main Outside the sv.+ -. D range, the oxygen content s 'is set at the present time' main Based on the rate, the input oxygen content sv is approximated stepwise at a rate to determine the target oxygen content s in the process main 。
Step 202, determining a first deviation value according to the detected oxygen content and the target oxygen content;
to reduce the deviation between the current detected oxygen content and the target oxygen content in the chamber to minimize the deviation, a difference between the detected oxygen content and the target oxygen content may be determined to obtain a first deviation value.
Step 203, determining an initial purge flow according to the first deviation value;
after the current first deviation value is obtained, the deviation of the oxygen content in the chamber is obtained, and then the initial purging flow for the inert gas for purging the chamber can be obtained according to the deviation of the oxygen content.
Step 204, obtaining a pressure flow conversion coefficient and a current pressure value of the loading and unloading chamber, and converting the pressure value into a reference purge flow according to the pressure flow conversion coefficient;
in order to give consideration to the pressure value in the chamber and ensure the reliable operation of the micro-positive pressure system under the condition of good micro-oxygen control, the pressure in the chamber can be measured in real time so as to obtain the current pressure value, and the pressure value can be converted into the reference purge flow for the inert gas for purging the chamber according to the preset pressure flow conversion coefficient so as to be compared with the initial purge flow in the same interval range.
Specifically, the pressure-flow conversion coefficient may be set according to the relation between the required range of the machine pressure value, the pressure value and the purge flow, so that the converted pressure value can be compared with the initial purge flow, for example, the range of the initial purge flow is 0-1000.0, and the pressure value needs to be in the range after conversion.
For example, in a standard machine, the ideal pressure range is 3000 mtorr+ -1000 mtorr, if the pressure value (xt) of 3000mtorr corresponds to the purge flow (yt) of 500SLM/min, the reference value of the ratio k is derived from this correspondence, according to the formulaYielding k=1/6.
In one embodiment of the present invention, converting the pressure value into the reference purge flow according to the pressure flow conversion coefficient may include:
performing interval definition on the pressure value to obtain a pressure value after interval definition; and converting the pressure value after the interval definition into a reference purge flow according to the pressure flow conversion coefficient.
In one embodiment of the present invention, the interval defining the pressure value includes:
updating the pressure value to the first pressure threshold value under the condition that the pressure value is larger than the first pressure threshold value; updating the pressure value to a second pressure threshold value when the pressure value is less than the second pressure threshold value;
wherein the second pressure threshold is less than the first pressure threshold.
In practical applications, a pressure threshold range formed by the first pressure threshold and the second pressure threshold may be set, in the case where the pressure value is greater than the first pressure threshold, the pressure value may be updated to the first pressure threshold (the upper limit of the pressure threshold range), and in the case where the pressure value is less than the second pressure threshold, the pressure value may be updated to the second pressure threshold (the lower limit of the pressure threshold range), as shown in the following formula:
wherein ,xj For the pressure value after interval definition, x p For the initial pressure value, n is the first pressure threshold and m is the second pressure threshold.
Step 205, determining a second deviation value according to the initial purge flow and the reference purge flow;
after the initial purge flow and the reference purge flow are obtained, the two may then be compared to obtain a second deviation value, i.e., a deviation value for the purge flow of the inert gas.
And 206, determining a final purging flow according to the second deviation value, and purging the loading and unloading chamber by adopting the final purging flow to control the oxygen content.
Wherein the loadlock chamber is purged with an inert gas, such as high purity nitrogen.
After the second deviation value is obtained, the final purge flow can be determined according to the second deviation value, the final purge flow is output as the MFC, and then inert gas can be filled into the chamber with the final purge flow so as to purge the chamber, and oxygen is discharged out of the chamber, so that the oxygen content of the chamber meets the process requirement, meanwhile, the micro positive pressure of the chamber is maintained, the micro positive pressure can effectively prevent external air from entering the chamber, and the oxygen content control effect is ensured.
In an embodiment of the present invention, in order to avoid a problem of generating a spike when an abrupt step change occurs in the final purge flow of the output, and ensure a smooth output of the flow, a filtering output may be designed to smooth the output flow value, and before the final purge flow is adopted to purge the chamber, the method further includes:
The final purge flow value is filtered using the following formula:
y n ＝a 1 *y dn +a 2 *y n-1 +a 1 *y n-2
wherein ,yn For the final purge flow value of this output, y dn For final purge flow value without filter treatment, y n-1 For the last final purge flow value, y n-2 A is the final purge flow value output last time before 1 For filtering parameters, a 2 Is a filtering parameter.
In an embodiment of the present invention, to prevent frequent changes in the output final purge flow, before purging the chamber with the final purge flow, the method may further include:
and when the difference value between the current final purge flow and the last final purge flow is smaller than or equal to a preset threshold value, replacing the current final purge flow with the last final purge flow.
Specifically, if the difference between the current final purge flow and the last final purge flow is smaller than or equal to the preset threshold, the last final purge flow is used to replace the current final purge flow, that is, the last final purge flow is maintained unchanged, and only if the difference between the current final purge flow and the last final purge flow is larger than the preset threshold, the current final purge flow is output, as shown in the following formula:
Where y (n) is the current final purge flow, y (n-1) is the last final purge flow, and y0 is a preset threshold.
In the embodiment of the invention, the current target oxygen content and the detected oxygen content of the loading and unloading chamber are obtained, the first deviation value is determined according to the detected oxygen content and the target oxygen content, the initial purging flow is determined according to the first deviation value, then the pressure flow conversion coefficient and the current pressure value of the loading and unloading chamber can be obtained, the pressure value is converted into the reference purging flow according to the pressure flow conversion coefficient, the second deviation value is determined according to the initial purging flow and the reference purging flow, the final purging flow is determined according to the second deviation value, and the loading and unloading chamber is purged by adopting the final purging flow so as to control the oxygen content, thereby realizing the oxygen content control by changing in the self-adaption chamber, considering the oxygen content and the pressure value in the chamber, improving the accuracy and timeliness of the oxygen content control in the chamber, and ensuring the processing quality of semiconductors.
Referring to fig. 3, a flowchart illustrating a method for controlling oxygen content in a load chamber of a semiconductor thermal processing apparatus according to an embodiment of the present invention may specifically include the following steps:
Step 301, obtaining the current target oxygen content and the detected oxygen content of the loading and unloading chamber;
step 302, determining a first deviation value according to the detected oxygen content and the target oxygen content;
step 303, calculating by using a preset first PID algorithm based on the current first deviation value and the historical first deviation value to determine an initial purge flow;
in order to achieve a better control effect, a feedforward cascade PID (proportional integral differential) control based on an oxygen content value and a pressure value may be used, as shown in fig. 4, by setting a master control and a slave control, the master control calculates an output according to a difference value (i.e., a first deviation value) between the feedback value and the oxygen content setting value, the slave control calculates an output according to an output of the master control and the scaled pressure value, and the MFC output is equal to the slave control output by setting the master control and the slave control, the feedback value (i.e., the detected oxygen content) and the oxygen content setting value (i.e., the target oxygen content) as inputs of the master control.
In a specific implementation, an incremental PID (proportion integration differentiation) can be applied, the incremental PID is a recursive algorithm, the control quantity at the current moment and the control quantity at the last moment can be differenced, the difference value is used as a new control quantity, and the method can be applied to the embodiment of the invention, and a preset first PID algorithm can be used for processing the current first deviation value and the historical first deviation value to obtain the initial purge flow.
As an example, the formula of the first PID algorithm is:
u n ＝u n-1 +Δu
Δu＝K p *(e n -e n-1 )+K i *e n +K d *(e n -2e n-1 +e n-2 )
wherein ,un U is the current initial purge flow n-1 For the last initial purge flow, deltau is the increment from the initial purge flow, e n E is the current first deviation value n-1 E is the last first deviation value n-2 For the first deviation value, K p Is a proportionality coefficient, K i As integral coefficient, K d Is an integral coefficient.
Step 304, obtaining a pressure flow conversion coefficient and a current pressure value of the loading and unloading chamber, and converting the pressure value into a reference purge flow according to the pressure flow conversion coefficient;
step 305, determining a second deviation value according to the initial purge flow and the reference purge flow;
step 306, calculating by adopting a preset second PID algorithm based on the current second deviation value and the historical second deviation value to determine the final purge flow;
in a specific implementation, an incremental PID (proportion integration differentiation) can be applied, the incremental PID is a recursive algorithm, the control quantity at the current moment and the control quantity at the last moment can be differenced, the difference value is used as a new control quantity, and a preset second PID algorithm can be used for processing the current second deviation value and the historical second deviation value to obtain the final purge flow.
As an example, the formula of the second PID algorithm is:
u′ n ＝u′ n-1 +Δu′
Δu′＝K p *(e′ n -e′ n-1 )+K i *e′ n +K d *(e′ n -2e′ n-1 +e′ n-2 )
wherein ,u′n For the current final purge flow, u' n-1 For the last final purge flow, deltau 'is the increment of the final purge flow, e' n E 'as the current second deviation value' n-1 E 'being the last second deviation value' n-2 For the second deviation value, K p Is a proportionality coefficient, K i As integral coefficient, K d Is an integral coefficient.
In step 307, the loadlock chamber is purged with a final purge flow to control oxygen content.
An embodiment of the present invention is illustrated below in conjunction with fig. 5:
1. master control loop PID control: by setting the value s of the oxygen content main (i.e., target oxygen content) and feedback value x (n) (i.e., detected oxygen content) to calculate difference e (n) =x (n) -s main (i.e. the first deviation value), and then the master control output y can be obtained through PID operation main =u (i.e. initial purge flow), its output ranges from 0.0 to 1000.0.
2. Auxiliary control loop PID control: the pressure value is used as a feedforward value and the main control output is used as an auxiliary control input value, and the main control output is used as an auxiliary control set value s assist ＝y main The current pressure value is used as the auxiliary control input x after interval definition and proportion conversion i Comparing it with the master control output to obtain a difference e (n) =s assist -x i (i.e. the second deviation value), and then PID operation can be performed to obtain the inert gas flow y output by the auxiliary control assist＝u (i.e., final purge flow) with final output in the range of 0.0-1000.0SLM/min.
Wherein the pressure value is greater than n (upper interval limit), treated by n, the pressure value is less than m (lower interval limit), treated by m. The pressure value after the interval definition can be converted according to the proportion k.
Specifically, the conversion parameters can be adjusted according to the relation between the required range of the pressure value of the machine and the sweeping flow, so that the converted pressure value can be compared with the initial sweeping flow, and if the range of the current initial sweeping flow is 0-1000.0, the pressure value is required to be within the range after conversion.
For example, in a standard machine, the ideal pressure range is 3000 mtorr+ -1000 mtorr, if the pressure value (xt) of 3000mtorr corresponds to the inert gas flow (yt) of 500SLM/min, the reference value of the ratio k is obtained according to the corresponding relation, and the formula is givenYielding k=1/6.
The application of the embodiment of the invention has at least the following effects:
1. saving the flow of inert gas
In the case of good sealing, when the process is ready to start, the oxygen content of the chamber needs to be controlled at the target value, so that the effect of saving the air flow can be achieved.
As in fig. 6a, the ordinate represents oxygen content, the right ordinate represents inert gas flow, the abscissa represents time, the broken line represents the change in oxygen content with time, and the solid line represents the output change in inert gas flow.
Wherein, the target value is 10ppm, and oxygen content remains at 10+ -1 ppm after reaching the target value, through PID regulation, and finally inert gas flow stabilizes at 400SLM/min, compared with 500SLM/min of fixed flow mode, inert gas flow of 100SLM/min is saved.
2. Can recover in time when oxygen content suddenly changes
When the oxygen content is stable, if the oxygen content of the chamber suddenly changes, such as in the boat lifting process or the sheet opening process, the oxygen enters the chamber, the oxygen content suddenly increases, the change can be quickly tracked, the output is regulated, and the oxygen content is restored to the process requirement range.
As in fig. 6b, the ordinate represents oxygen content, the right ordinate represents inert gas flow, the abscissa represents time, the broken line represents the change in oxygen content with time, and the solid line represents the output change in inert gas flow.
Wherein the target value is 10ppm, and the oxygen content is maintained at 10+ -1 ppm after reaching the target value. The point a is a machine station provided with a boat lifting or sheet conveying port, oxygen enters a loading and unloading chamber from a sheet box, the oxygen content rises, the flow of inert gas changes along with the oxygen, the oxygen content is recovered to about 11ppm (point b) from 610SLM/min to 1000SLM/min through about 15min, and the oxygen content is always maintained at 10+/-1 ppm.
3. Under the condition of non-ideal sealing or small target value of oxygen content, the process requirement can be met
When the sealing condition of the equipment is poor, the oxygen content of the loading and unloading chamber needs to be controlled at a target value, and the oxygen content reaches the index meeting the process requirement by increasing the flow.
As shown in fig. 6c, the ordinate represents the oxygen content, the right ordinate represents the inert gas flow rate, the abscissa represents time, the broken line represents the change of the oxygen content with time, and the solid line represents the output change of the inert gas flow rate.
Wherein the target value is 5ppm, the oxygen content is kept at 5+/-1 ppm after the target value is reached, the inert gas flow is from 992SLM/min to 510SLM/min, and finally the inert gas flow is kept at about 690 SLM/min; and the point a is output when the target value is reached, and the inert gas flow is output stably when suddenly changing.
It should be noted that, for simplicity of description, the method embodiments are shown as a series of acts, but it should be understood by those skilled in the art that the embodiments are not limited by the order of acts, as some steps may occur in other orders or concurrently in accordance with the embodiments. Further, those skilled in the art will appreciate that the embodiments described in the specification are presently preferred embodiments, and that the acts are not necessarily required by the embodiments of the invention.
An embodiment of the present invention provides a semiconductor heat treatment apparatus including: the device comprises a controller and a loading and unloading chamber, wherein a detection device and a purging device are arranged on the loading and unloading chamber.
The detection device is used for detecting the oxygen content and the pressure value in the loading and unloading chamber;
the controller is used for acquiring the current target oxygen content of the loading and unloading chamber and detecting the oxygen content; determining a first deviation value based on the detected oxygen content and the target oxygen content; determining an initial purge flow according to the first offset value; acquiring a pressure flow conversion coefficient and a current pressure value of the chamber, and converting the pressure value into a reference purge flow according to the pressure flow conversion coefficient; determining a second offset value based on the initial purge flow and the reference purge flow; and determining a final purging flow according to the second deviation value, and controlling the purging device to purge the loading and unloading chamber by adopting the final purging flow so as to control the oxygen content.
In an embodiment of the present invention, the determining the initial purge flow according to the first deviation value includes:
based on the current first deviation value and the historical first deviation value, calculating by adopting a preset first PID algorithm, and determining the initial purge flow;
The determining the final purge flow according to the second deviation value includes:
and calculating by adopting a preset second PID algorithm based on the current second deviation value and the historical second deviation value, and determining the final purge flow.
In an embodiment of the present invention, the formula of the first PID algorithm is:
u n ＝u n-1 +Δu
Δu＝K p *(e n -e n-1 )+K i *e n +K d *(e n -2e n-1 +e n-2 )
wherein ,un U is the current initial purge flow n-1 For the last initial purge flow, Δu is the increment of the initial purge flow, e n E being the current first deviation value n-1 E is the last first deviation value n-2 For the first deviation value, K p Is a proportionality coefficient, K i As integral coefficient, K d Is an integral coefficient;
and/or, the formula of the second PID algorithm is:
u′ n ＝u′ n-1 +Δu′
Δu′＝K p *(e′ n -e′ n-1 )+K i *e′ n +K d *(e′ n -2e′ n-1 +e′ n-2 )
wherein ,u′n For the current final purge flow, u' n-1 For the last final purge flow, Δu 'is the increment of the final purge flow, e' n E 'is the current second deviation value' n-1 E 'is the last second deviation value' n-2 For the second deviation value, K p Is a proportionality coefficient, K i As integral coefficient, K d Is an integral coefficient.
In an embodiment of the present invention, before the purging the chamber with the final purge flow, the method further includes:
And when the difference value between the current final purge flow and the last final purge flow is smaller than or equal to a preset threshold value, replacing the current final purge flow with the last final purge flow.
In an embodiment of the present invention, before the purging the chamber with the final purge flow, the method further includes:
the final purge flow value is filtered using the following formula:
y n ＝a 1 *y dn +a 2 *y n-1 +a 1 *y n-2
wherein ,yn For the final purge flow value, y dn For the final purge flow value, y, without filter treatment n-1 Y is the last final purge flow value n-2 A for the final purge flow value previously output 1 For filtering parameters, a 2 Is a filtering parameter.
In one embodiment of the present invention, the obtaining the target oxygen content of the loadlock chamber includes:
obtaining the target oxygen content according to the following formula:
at s' main When < sv-d, s main ＝s′ main +t*rate；
At s' main At > sv-d, s main ＝s′ main -t*rate；
At sv-d < s' main When < sv+d, s main ＝sv；
wherein ,smain For the target oxygen content, s' main For the current set oxygen content, sv is the input oxygen content, d is the deviation between the current set oxygen content and the input oxygen content, t is the calculation period, and rate is the step rate.
In an embodiment of the present invention, the converting the pressure value into the reference purge flow according to the pressure-flow conversion coefficient includes:
performing interval definition on the pressure value to obtain the pressure value after interval definition;
and converting the pressure value after interval definition into the reference purge flow according to the pressure flow conversion coefficient.
In an embodiment of the present invention, the interval defining the pressure value includes:
updating the pressure value to a first pressure threshold value when the pressure value is greater than the first pressure threshold value;
updating the pressure value to a second pressure threshold value when the pressure value is smaller than the second pressure threshold value;
wherein the second pressure threshold is less than the first pressure threshold.
In one embodiment of the invention, the load chamber is purged with an inert gas.
In the embodiment of the invention, the current target oxygen content and the detected oxygen content of the loading and unloading chamber are obtained, the first deviation value is determined according to the detected oxygen content and the target oxygen content, the initial purging flow is determined according to the first deviation value, then the pressure flow conversion coefficient and the current pressure value of the loading and unloading chamber can be obtained, the pressure value is converted into the reference purging flow according to the pressure flow conversion coefficient, the second deviation value is determined according to the initial purging flow and the reference purging flow, the final purging flow is determined according to the second deviation value, and the loading and unloading chamber is purged by adopting the final purging flow so as to control the oxygen content, thereby realizing the oxygen content control by changing in the self-adaption chamber, considering the oxygen content and the pressure value in the chamber, improving the accuracy and timeliness of the oxygen content control in the chamber, and ensuring the processing quality of semiconductors.
An embodiment of the present invention also provides an electronic device that may include a processor, a memory, and a computer program stored on the memory and capable of running on the processor, the computer program when executed by the processor implementing a method for controlling oxygen content in a load lock chamber of a semiconductor thermal processing device as described above.
An embodiment of the present invention also provides a computer readable storage medium having a computer program stored thereon, which when executed by a processor, implements a method for controlling oxygen content in a load chamber of a semiconductor thermal processing apparatus as described above.
For the device embodiments, since they are substantially similar to the method embodiments, the description is relatively simple, and reference is made to the description of the method embodiments for relevant points.
In this specification, each embodiment is described in a progressive manner, and each embodiment is mainly described by differences from other embodiments, and identical and similar parts between the embodiments are all enough to be referred to each other.
It will be apparent to those skilled in the art that embodiments of the present invention may be provided as a method, apparatus, or computer program product. Accordingly, embodiments of the present invention may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, embodiments of the invention may take the form of a computer program product on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, etc.) having computer-usable program code embodied therein.
Embodiments of the present invention are described with reference to flowchart illustrations and/or block diagrams of methods, terminal devices (systems), and computer program products according to embodiments of the invention. It will be understood that each flow and/or block of the flowchart illustrations and/or block diagrams, and combinations of flows and/or blocks in the flowchart illustrations and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing terminal device to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing terminal device, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the following claims be interpreted as including the preferred embodiment and all such alterations and modifications as fall within the scope of the embodiments of the invention.
Finally, it is further noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article or terminal device comprising the element.
The foregoing has described in detail the provided semiconductor thermal processing apparatus and method for controlling the oxygen content in the load lock chamber thereof, and specific examples have been presented herein to illustrate the principles and embodiments of the present invention and to assist in understanding the methods and core concepts thereof; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in accordance with the ideas of the present invention, the present description should not be construed as limiting the present invention in view of the above.
Claims (9)
1. A method of controlling oxygen content in a load lock chamber of a semiconductor thermal processing apparatus, the method comprising:
obtaining the current target oxygen content and detecting the oxygen content of the loading and unloading chamber, wherein the target oxygen content is obtained according to the following formula:
at the position ofWhen (I)>；
At the position ofWhen (I)>；
At the position ofWhen (I)>；
wherein ,for the target oxygen content,/->For the currently set oxygen content, +.>For the oxygen content of the input->For the current set oxygen content and inputDeviation between oxygen contents->For calculating period +.>Is a stepping rate;
determining a first deviation value according to the detected oxygen content and the target set oxygen content;
Determining an initial purge flow according to the first offset value;
acquiring a pressure flow conversion coefficient and a current pressure value of the loading and unloading chamber, and converting the pressure value into a reference purge flow according to the pressure flow conversion coefficient, wherein the pressure flow conversion coefficient is the ratio of the purge flow corresponding to the pressure value;
determining a second offset value based on the initial purge flow and the reference purge flow;
and determining a final purging flow according to the second deviation value, and purging the loading and unloading chamber by adopting the final purging flow so as to control the oxygen content.
2. The method of claim 1, wherein said determining an initial purge flow from said first offset value comprises:
based on the current first deviation value and the historical first deviation value, calculating by adopting a preset first PID algorithm, and determining the initial purge flow;
the determining the final purge flow according to the second deviation value includes:
and calculating by adopting a preset second PID algorithm based on the current second deviation value and the historical second deviation value, and determining the final purge flow.
3. The method of claim 2, wherein the step of determining the position of the substrate comprises,
the formula of the first PID algorithm is as follows:
wherein ,for the current initial purge flow, +.>For the last initial purge flow, +.>For an increment of the initial purge flow, +.>For the current first deviation value, < >>For the last said first deviation value, -/->For said first deviation value before last time,/or>Is a proportional coefficient->For the integral coefficient +.>Is an integral coefficient;
and/or, the formula of the second PID algorithm is:
wherein ,for the current final purge flow, +.>For the last final purge flow, +.>For the increment of the final purge flow, +.>For the second deviation value at present, < >>For the second deviation value of last time, +.>For said second deviation value before last time,/or>Is a proportional coefficient->For the integral coefficient +.>Is an integral coefficient.
4. A method according to any one of claims 1-3, further comprising, prior to said purging said chamber with said final purge flow:
and when the difference value between the current final purge flow and the last final purge flow is smaller than or equal to a preset threshold value, replacing the current final purge flow with the last final purge flow.
5. A method according to any one of claims 1-3, further comprising, prior to said purging said chamber with said final purge flow:
the final purge flow value is filtered using the following formula:
wherein ,for the final purge flow value of this output, +.>For the final purge flow value without filtering treatment,/->For the last final purge flow value of output, +.>For the final purge flow value last output before, +.>For filtering parameters +.>Is a filtering parameter.
6. A method according to any one of claims 1-3, wherein said converting said pressure value into a reference purge flow according to said pressure flow conversion factor comprises:
performing interval definition on the pressure value to obtain the pressure value after interval definition;
and converting the pressure value after interval definition into the reference purge flow according to the pressure flow conversion coefficient.
7. The method of claim 6, wherein the interval defining the pressure value comprises:
updating the pressure value to a first pressure threshold value when the pressure value is greater than the first pressure threshold value;
Updating the pressure value to a second pressure threshold value when the pressure value is smaller than the second pressure threshold value;
wherein the second pressure threshold is less than the first pressure threshold.
8. A method according to any one of claims 1 to 3, wherein the loading and unloading chamber is purged with an inert gas.
9. A semiconductor heat treatment apparatus, comprising: the device comprises a controller and a loading and unloading chamber, wherein the loading and unloading chamber is provided with a detection device and a purging device,
the detection device is used for detecting the oxygen content and the pressure value in the loading and unloading chamber;
the controller is configured to obtain a current target oxygen content and detect an oxygen content of the load and unload chamber, where the target oxygen content is obtained according to the following formula:
at the position ofWhen (I)>；
At the position ofWhen (I)>；
At the position ofWhen (I)>；
wherein ,for the target oxygen content,/->For the currently set oxygen content, +.>For the oxygen content of the input->For the deviation between the currently set oxygen content and the supplied oxygen content, < >>For calculating period +.>Is a stepping rate;
determining a first deviation value based on the detected oxygen content and the target oxygen content; determining an initial purge flow according to the first offset value; acquiring a pressure flow conversion coefficient and a current pressure value of the chamber, and converting the pressure value into a reference purge flow according to the pressure flow conversion coefficient; determining a second offset value based on the initial purge flow and the reference purge flow; and determining a final purging flow according to the second deviation value, and purging the loading and unloading chamber by adopting the final purging flow to control the purging device so as to control the oxygen content, wherein the pressure-flow conversion coefficient is a ratio of the purging flow corresponding to the pressure value.
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| 可移动式微量氧分析仪检定装置研制;高捷 等;《化学分析计量》;20200531;第29卷(第3期);119-123 * |
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