CN113403678B - Single crystal fusion method, apparatus, device and computer readable storage medium - Google Patents
Single crystal fusion method, apparatus, device and computer readable storage medium Download PDFInfo
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- CN113403678B CN113403678B CN202110640065.2A CN202110640065A CN113403678B CN 113403678 B CN113403678 B CN 113403678B CN 202110640065 A CN202110640065 A CN 202110640065A CN 113403678 B CN113403678 B CN 113403678B
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- 239000013078 crystal Substances 0.000 title claims abstract description 251
- 238000007500 overflow downdraw method Methods 0.000 title claims abstract description 14
- 238000003860 storage Methods 0.000 title claims abstract description 10
- 238000003466 welding Methods 0.000 claims abstract description 249
- 239000007788 liquid Substances 0.000 claims abstract description 104
- 238000000034 method Methods 0.000 claims abstract description 70
- 238000010899 nucleation Methods 0.000 claims abstract description 19
- 230000004927 fusion Effects 0.000 claims abstract description 12
- 238000001514 detection method Methods 0.000 claims description 7
- 239000000155 melt Substances 0.000 claims description 6
- 230000004044 response Effects 0.000 claims description 5
- 230000033228 biological regulation Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000013459 approach Methods 0.000 description 2
- 238000002109 crystal growth method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Engineering & Computer Science (AREA)
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- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The application provides a monocrystalline fusion method, a monocrystalline fusion device, monocrystalline fusion equipment and a computer readable storage medium, and relates to the technical field of solar photovoltaics. The method can detect the real-time liquid level brightness value of the molten liquid in the preheating process of the seed crystal, and determine the real-time deviation value of the real-time liquid level brightness value and the target liquid level brightness value, wherein the target liquid level brightness value is the liquid level brightness value when the seeding operation is executed, at the moment, the position of the seed crystal can be adjusted to be lowered to the preheating position corresponding to the preheating deviation value when the real-time deviation value is smaller than the preheating deviation value, so that the seed crystal is fully preheated, and then the seed crystal is directly welded when the real-time deviation value is smaller than the welding deviation value, so that the operation of welding the seed crystal is standardized and automated, the welding success rate and the repeatability are improved, the productivity and the yield of products are improved, the labor cost is reduced, and the potential safety hazard is avoided.
Description
Technical Field
The application relates to the technical field of solar photovoltaic, in particular to a single crystal welding method, a single crystal welding device, single crystal welding equipment and a computer readable storage medium.
Background
The Czochralski (Cz method) is one of the common crystal growth methods, and the raw material silicon is heated and melted in a single crystal furnace, and then a rod-shaped seed crystal is immersed in the melt, so that silicon atoms in the melt form regular crystals on a solid-liquid interface along the arrangement structure of the silicon atoms on the seed crystal, thereby forming a single crystal.
The welding is a key step in the temperature adjustment-seeding process, when the proper temperature condition is reached, the welding operation needs to be carried out in time, otherwise, the welding quality is affected, and the line is broken in the shouldering process; meanwhile, the seed crystal is preheated in the welding operation, and whether the seed crystal is preheated sufficiently or not can directly influence the welding quality, so that potential safety hazards are caused.
At present, in the preheating-welding process of seed crystals, through manual operation of a worker, the worker is required to judge the time for executing the welding operation by itself, or the degree of preheating the seed crystals is low in success rate and poor in reproducibility, and potential safety hazards and high in labor cost exist.
Disclosure of Invention
The application provides a single crystal welding method, a device, equipment and a computer readable storage medium, which aim to reduce time labor cost in the single crystal welding process, improve the success rate and reproducibility of welding operation and avoid potential safety hazards.
In a first aspect, embodiments of the present application provide a single crystal fusion method, which may include:
detecting the real-time liquid level brightness value of the molten liquid in the process of preheating the seed crystal;
determining a real-time deviation value of the real-time liquid level brightness value and a target liquid level brightness value, wherein the target liquid level brightness value is a liquid level brightness value when the seeding operation is executed;
under the condition that the real-time deviation value is smaller than the preheating deviation value, the position of the seed crystal is adjusted to be lowered to a preheating position corresponding to the preheating deviation value;
and under the condition that the real-time deviation value is smaller than the welding deviation value, welding the seed crystal, wherein the welding deviation value is smaller than the preheating deviation value.
Optionally, after the seed crystal is welded under the condition that the real-time deviation value is smaller than the welding deviation value, the method further includes:
detecting the welding diameter of the welded seed crystal;
under the condition that the welding diameter is smaller than a first preset welding diameter, adjusting a welding position to weld again until the welding diameter is larger than or equal to the first preset welding diameter and smaller than or equal to the second preset welding diameter, wherein the second preset welding diameter is larger than the first preset welding diameter;
and alarming the welded seed crystal under the condition that the welding diameter is larger than the second preset welding diameter.
Optionally, before detecting the real-time liquid level brightness value of the melt in the process of preheating the seed crystal, the method comprises the following steps:
in response to the first input, the seed crystal is preheated and the position of the seed crystal is lowered to a first preheat position.
Optionally, the adjusting the position of the seed crystal to be lowered to the preheating position corresponding to the preheating offset value when the real-time offset value is smaller than the preheating offset value includes:
lowering the position of the seed crystal from the first preheating position to a second preheating position under the condition that the real-time deviation value is smaller than a first preheating deviation value;
lowering the position of the seed crystal from the second preheating position to a third preheating position under the condition that the real-time deviation value is smaller than a second preheating deviation value;
lowering the position of the seed crystal from the third preheating position to a fourth preheating position under the condition that the real-time deviation value is smaller than a third preheating deviation value;
lowering the position of the seed crystal from the fourth preheating position to a fifth preheating position under the condition that the real-time deviation value is smaller than a fourth preheating deviation value;
the magnitudes of the first preheating offset value, the second preheating offset value, the third preheating offset value and the fourth preheating offset value are sequentially reduced.
Optionally, before the adjusting the position of the seed crystal is lowered to the preheating position corresponding to the preheating offset value when the real-time offset value is smaller than the preheating offset value, the method further includes:
and under the condition that the real-time deviation value is larger than the temperature-regulating deviation value, determining the relation between the real-time deviation value and the preheating deviation value, wherein the temperature-regulating deviation value is larger than the preheating deviation value.
Optionally, in the case that the real-time deviation value is smaller than the welding deviation value, welding the seed crystal includes:
under the condition that the real-time deviation value is smaller than the welding deviation value and a historical welding position exists in the seed crystal, welding the seed crystal according to the historical welding position;
and under the condition that the real-time deviation value is smaller than the welding deviation value and the seed crystal does not have a historical welding position, welding the seed crystal according to a preset welding position.
In a second aspect, embodiments of the present application provide a single crystal fusion apparatus, which may include:
the brightness value detection module is used for detecting the real-time liquid level brightness value of the molten liquid in the process of preheating the seed crystal;
the deviation value determining module is used for determining a real-time deviation value between the real-time liquid level brightness value and a target liquid level brightness value, wherein the target liquid level brightness value is a liquid level brightness value when the seeding operation is executed;
the seed crystal preheating module is used for adjusting the position of the seed crystal to be lowered to a preheating position corresponding to the preheating deviation value under the condition that the real-time deviation value is smaller than the preheating deviation value;
and the seed crystal welding module is used for welding the seed crystal under the condition that the real-time deviation value is smaller than the welding deviation value, and the welding deviation value is smaller than the preheating deviation value.
The diameter detection module is used for detecting the welding diameter of the welded seed crystal;
the seed crystal welding module is further used for adjusting a welding position to weld again when the welding diameter is smaller than a first preset welding diameter, and the welding position is adjusted to be larger than or equal to the first preset welding diameter and smaller than or equal to a second preset welding diameter, and the second preset welding diameter is larger than the first preset welding diameter;
and the seed crystal warning module is used for warning the welded seed crystal under the condition that the welding diameter is larger than the second preset welding diameter.
Optionally, the apparatus further comprises:
the preheating starting module is used for responding to the first input, preheating the seed crystal and descending the position of the seed crystal to a first preheating position;
a seed preheating module comprising:
the first seed crystal preheating sub-module is used for descending the position of the seed crystal from the first preheating position to the second preheating position under the condition that the real-time deviation value is smaller than the first preheating deviation value;
a second seed crystal preheating sub-module for lowering the position of the seed crystal from the second preheating position to a third preheating position in the case that the real-time deviation value is smaller than the second preheating deviation value;
a third seed crystal preheating sub-module for lowering the position of the seed crystal from the third preheating position to a fourth preheating position under the condition that the real-time deviation value is smaller than the third preheating deviation value;
a fourth seed crystal preheating sub-module for lowering the position of the seed crystal from the fourth preheating position to a fifth preheating position under the condition that the real-time deviation value is smaller than the fourth preheating deviation value;
the magnitudes of the first preheating offset value, the second preheating offset value, the third preheating offset value and the fourth preheating offset value are sequentially reduced.
Optionally, the apparatus further comprises:
and the temperature regulation starting module is used for determining the relation between the real-time deviation value and the preheating deviation value under the condition that the real-time deviation value is larger than the temperature regulation deviation value, and the temperature regulation deviation value is larger than the preheating deviation value.
Optionally, the seed crystal fusion module comprises:
the historical welding sub-module is used for welding the seed crystal according to the historical welding position when the real-time deviation value is smaller than the welding deviation value and the historical welding position exists in the seed crystal;
and the preset welding submodule is used for welding the seed crystal according to the preset welding position under the condition that the real-time deviation value is smaller than the welding deviation value and the historical welding position of the seed crystal does not exist.
In a third aspect, an embodiment of the present application further provides an apparatus, including: an interface, a bus, a memory, and a processor, the interface, the memory, and the processor being connected by the bus, the memory being for storing an executable program, the processor being configured to run the executable program to implement the steps of the single crystal fusion method according to the first aspect.
In a fourth aspect, embodiments of the present application also provide a computer storage medium having stored thereon an executable program that is executed by a processor to implement the steps of the single crystal fusion method according to the first aspect.
In the embodiment of the application, the real-time liquid level brightness value of the molten liquid is detected in the preheating process of the seed crystal, and the real-time deviation value of the real-time liquid level brightness value and the target liquid level brightness value is determined, wherein the target liquid level brightness value is the liquid level brightness value when the seeding operation is executed, at the moment, the position of the seed crystal can be adjusted to be lowered to the preheating position corresponding to the preheating deviation value when the real-time deviation value is smaller than the preheating deviation value, so that the seed crystal is fully preheated, and then the seed crystal is directly welded when the real-time deviation value is smaller than the welding deviation value, so that the operation of welding the seed crystal is standardized and automated, the welding success rate and the repeatability are improved, the productivity and the yield of products are improved, the labor cost is reduced, and the potential safety hazard is avoided.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments of the present application will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart showing the steps of a single crystal fusion method according to an embodiment of the present application;
FIG. 2 is a flow chart showing steps of another single crystal fusion method according to an embodiment of the present application;
FIG. 3 is a schematic diagram showing an example of application of a single crystal fusion method according to an embodiment of the present application;
FIG. 4 is a schematic diagram of a process step interface provided by an embodiment of the present application;
fig. 5 shows a block diagram of a single crystal fusion apparatus according to an embodiment of the present application.
Detailed Description
The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are some, but not all embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
The Czochralski method in the related art is a commonly used crystal growth method, and is specifically realized by heating and melting polycrystalline silicon, and performing the steps of seed crystal immersion, fusion bonding, seeding, shouldering, shoulder turning, constant diameter, ending and the like at a proper temperature, wherein the process from fusion bonding to seeding is usually completed by manual operation, the time and the labor cost are increased, and the hidden danger of subsequent shouldering and wire breakage can be caused.
Fig. 1 shows a step flow chart of a single crystal fusion method according to an embodiment of the present application, and referring to fig. 1, the method may include:
step 101, detecting the real-time liquid level brightness value of the molten liquid in the process of preheating the seed crystal.
In the embodiment of the application, after the seed crystal is immersed in the molten liquid of the silicon raw material, a bright aperture is formed at the junction of the solid crystal and the liquid molten liquid in the crystal pulling process, and the aperture is formed by the reflection of the meniscus at the junction of the solid crystal and the liquid crystal on heat radiation, wherein the real-time liquid level brightness value of the molten liquid is the brightness value of the aperture, and the detection of the real-time liquid level brightness value of the molten liquid is continuously carried out. Alternatively, a CCD (Charge Coupled Device ) vision system may be used to detect and digitize the brightness of the liquid level to obtain a real-time liquid level brightness value, or other light sensing devices may be used to detect the real-time liquid level brightness value of the melt, which is not limited in the embodiments of the present application.
Step 102, determining a real-time deviation value of the real-time liquid level brightness value and a target liquid level brightness value, wherein the target liquid level brightness value is a liquid level brightness value when the seeding operation is executed.
In the embodiment of the application, the target liquid level brightness value is a liquid level brightness value when the seeding operation is performed, that is, a state that the single crystal growth process gradually approaches the seeding operation when the real-time liquid level brightness value of the molten liquid gradually approaches the target liquid level brightness value, and according to the deviation of the real-time liquid level brightness value relative to the target liquid level brightness value, the current single crystal growth state can be determined, so that the operation performed on the seed crystal is determined, alternatively, the deviation of the real-time liquid level brightness value and the target liquid level brightness value can be a difference value, a ratio value or the like, and the embodiment of the application is not limited in particular.
And step 103, under the condition that the real-time deviation value is smaller than the preheating deviation value, adjusting the position of the seed crystal to descend to a preheating position corresponding to the preheating deviation value.
In the embodiment of the application, the preheating deviation value is a condition threshold value for preheating operation of the seed crystal, wherein the preheating deviation value corresponds to the preheating position of the seed crystal, so that according to the relation between the real-time deviation value and the preheating deviation value, the adjustment of the preheating position of the seed crystal can be determined, for example, under the condition that the real-time deviation value meets the preheating deviation value, the preheating position of the seed crystal is adjusted to the preheating position corresponding to the preheating deviation value.
And step 103, welding the seed crystal under the condition that the real-time deviation value is smaller than the welding deviation value, wherein the welding deviation value is smaller than the preheating deviation value.
In the embodiment of the application, the welding deviation value is a condition threshold value for performing welding operation on the seed crystal, and because the single crystal growth state is closer to the single crystal growth state during seeding operation than during preheating when the welding operation is performed on the seed crystal, the welding deviation value is smaller than the preheating deviation value, the real-time deviation value between the real-time liquid level brightness value and the target liquid level brightness value gradually decreases after the preheating position is adjusted along with the advancing of the preheating process, and when the real-time deviation value decreases to meet the welding deviation value, the seed crystal can be considered to be fully preheated, and the welding operation is directly performed according to the judging result.
In the embodiment of the application, the real-time liquid level brightness value of the molten liquid is detected in the preheating process of the seed crystal, and the real-time deviation value of the real-time liquid level brightness value and the target liquid level brightness value is determined, wherein the target liquid level brightness value is the liquid level brightness value when the seeding operation is executed, at the moment, the position of the seed crystal can be adjusted to be lowered to the preheating position corresponding to the preheating deviation value when the real-time deviation value is smaller than the preheating deviation value, so that the seed crystal is fully preheated, and then the seed crystal is directly welded when the real-time deviation value is smaller than the welding deviation value, so that the operation of welding the seed crystal is standardized and automated, the welding success rate and the repeatability are improved, the productivity and the yield of products are improved, the labor cost is reduced, and the potential safety hazard is avoided.
Fig. 2 shows a flow chart of steps of another single crystal fusion method according to an embodiment of the present application, and as shown in fig. 2, the method may include:
step 201, preheating the seed crystal in response to the first input, and lowering the position of the seed crystal to a first preheating position.
In the embodiment of the application, the first input is an input for indicating the process equipment to perform automatic preheating and welding on the seed crystal, and optionally, the first input may include setting operations on a preheating deviation value, a welding deviation value, a preheating position and the like, and may also include starting operations on a preheating process. After receiving the first input, the seed crystal may be preheated in response to the first input, and in particular, the position of the seed crystal may be lowered to a first preheating position to preheat the seed crystal.
Step 202, detecting the real-time liquid level brightness value of the molten liquid in the process of preheating the seed crystal.
In the embodiment of the present application, step 202 may correspond to the description of step 101, and is not repeated here.
Step 203, determining a real-time deviation value between the real-time liquid level brightness value and a target liquid level brightness value, wherein the target liquid level brightness value is a liquid level brightness value when the seeding operation is executed.
In the embodiment of the present application, step 203 may correspond to the description of step 102, and is not repeated here.
And 204, determining the relation between the real-time deviation value and the preheating deviation value under the condition that the real-time deviation value is larger than the temperature-regulating deviation value, wherein the temperature-regulating deviation value is larger than the preheating deviation value.
In the embodiment of the application, the temperature adjustment deviation value refers to a condition threshold value for adjusting temperature in the seed crystal preheating process, the temperature adjustment deviation value is larger than the preheating deviation value, and when the real-time deviation value is larger than the temperature adjustment deviation value in the preheating process, the temperature adjustment is considered to be needed in the current single crystal growth process, so that the state of preheating the seed crystal is changed, namely the relation between the real-time deviation value and the preheating deviation value can be further determined, and the preheating position of the seed crystal is adjusted according to the determination result so as to adjust the state of preheating the seed crystal.
Step 205, in the case that the real-time deviation value is smaller than the first preheating deviation value, the position of the seed crystal is lowered from the first preheating position to the second preheating position.
And 206, lowering the position of the seed crystal from the second preheating position to a third preheating position under the condition that the real-time deviation value is smaller than the second preheating deviation value.
Step 207, lowering the position of the seed crystal from the third preheating position to a fourth preheating position in the case that the real-time deviation value is smaller than the third preheating deviation value.
Step 208, in the case that the real-time deviation value is smaller than the fourth preheating deviation value, the position of the seed crystal is lowered from the fourth preheating position to the fifth preheating position.
Optionally, the magnitudes of the first preheating offset value, the second preheating offset value, the third preheating offset value, and the fourth preheating offset value are sequentially reduced.
In the embodiment of the present application, steps 205 to 209 are processes of adjusting the preheating position according to the preheating deviation value, where the preheating deviation value may include a first preheating deviation value, a second preheating deviation value, a third preheating deviation value, and a fourth preheating deviation value, which are sequentially reduced in magnitude, and correspond to a second preheating position, a third preheating position, a fourth preheating position, and a fifth preheating position, which are gradually reduced in position, respectively. Alternatively, the number of preheating offset values and the correspondence between the preheating offset values and the preheating positions may be set by those skilled in the art according to actual needs, which is not particularly limited in the embodiment of the present application.
Step 209, welding the seed crystal according to the historical welding position when the real-time deviation value is smaller than the welding deviation value and the historical welding position of the seed crystal exists, wherein the welding deviation value is smaller than the preheating deviation value.
In the embodiment of the application, the seed crystal can be subjected to the welding operation, at the moment, the seed crystal has a historical welding position, and when the real-time deviation value is smaller than the welding deviation value, the seed crystal can be considered to be fully preheated, and at the moment, the seed crystal can be welded again from the historical welding position.
And 210, welding the seed crystal according to a preset welding position under the condition that the real-time deviation value is smaller than the welding deviation value and the historical welding position of the seed crystal does not exist.
In the embodiment of the application, the seed crystal may not receive the welding operation, at this time, the seed crystal does not have a history welding position, and when the real-time deviation value is smaller than the welding deviation value, the seed crystal may be considered to be sufficiently preheated, at this time, the seed crystal may be welded from a preset welding position, optionally, whether the seed crystal has the history welding position or the preset welding position of the seed crystal may be determined through the setting of the first input, or the diameter of the seed crystal may also be detected, and whether the seed crystal receives the welding operation is determined according to the diameter.
Step 211, detecting the welding diameter of the welded seed crystal.
In the embodiment of the application, the welding diameter of the seed crystal can be detected after the seed crystal is welded, and optionally, a CCD vision system can be used for detecting the size of the aperture, so as to determine the welding diameter of the seed crystal.
And 212, when the welding diameter is smaller than a first preset welding diameter, adjusting a welding position to weld again until the welding diameter is larger than or equal to the first preset welding diameter and smaller than or equal to the second preset welding diameter, wherein the second preset welding diameter is larger than the first preset welding diameter.
In the embodiment of the application, according to the subsequent process requirements and the product quality requirements, the welding diameter is in a required range, for example, the lower limit of the threshold value of the first preset welding diameter is used, the second preset welding diameter larger than the first preset welding diameter is used as the upper limit of the threshold value, the success of the welding operation is determined under the condition that the welding diameter is larger than or equal to the first preset welding diameter and smaller than or equal to the second preset welding diameter, the next process step is carried out, the welding diameter is considered to be thinner under the condition that the welding diameter is smaller than the first preset welding diameter, at this time, the welding position of the seed crystal can be adjusted to carry out welding again, so that the obtained welding diameter is in the required range, alternatively, the welding position of the seed crystal can be adjusted to reduce the preset distance for re-welding under the preset reducing speed, for example, the preset distance can be 2mm, 3mm and the like.
And 213, alarming the welded seed crystal under the condition that the welding diameter is larger than the second preset welding diameter.
In the embodiment of the application, when the welding diameter is larger than the second preset welding diameter, the welding operation can be considered to be failed, and the next process can not be performed, at this time, the seed crystal after welding can be alarmed so as to prompt the process failure, and optionally, various parameters in the preheating-welding process can be further recorded so as to avoid the occurrence of similar process failure in the subsequent preheating-welding process, and the process production efficiency is improved.
In the embodiment of the application, the real-time liquid level brightness value of the molten liquid is detected in the preheating process of the seed crystal, and the real-time deviation value of the real-time liquid level brightness value and the target liquid level brightness value is determined, wherein the target liquid level brightness value is the liquid level brightness value when the seeding operation is executed, at the moment, the position of the seed crystal can be adjusted to be lowered to the preheating position corresponding to the preheating deviation value when the real-time deviation value is smaller than the preheating deviation value, so that the seed crystal is fully preheated, and then the seed crystal is directly welded when the real-time deviation value is smaller than the welding deviation value, so that the operation of welding the seed crystal is standardized and automated, the welding success rate and the repeatability are improved, the productivity and the yield of products are improved, the labor cost is reduced, and the potential safety hazard is avoided.
Fig. 3 is a schematic diagram of an application example of a single crystal fusion method according to an embodiment of the present application, and as shown in fig. 3, the method may include:
step 301, a first input to a "full-automatic" key is received via a process step interface.
Fig. 4 is a schematic diagram of an interface of a process step provided in an embodiment of the present application, as shown in fig. 4, where the process step includes a "full-automatic" function key in addition to "melting material", "secondary charging", "high temperature preparation", "shoulder turning", "constant diameter", "ending", "furnace shutdown" and other function keys, where the "full-automatic" function key is used to start a seed crystal automatic preheating-welding function.
In the embodiment of the application, the parameters can be preset in the seed crystal automatic preheating-welding function to realize automatic judgment, and optionally, the parameters shown in the following table can be included:
TABLE 1 preheating offset and preheating position
| Preheating offset value | Parameter identification | Preheating position | Parameter identification |
| First preheating deviation value | Y1 | Second preheating position | L1 |
| Second preheating offset value | Y2 | Third preheating position | L2 |
| Third preheating offset value | Y3 | Fourth preheating position | L3 |
| Fourth preheating offset value | Y4 | Fifth preheating position | L4 |
Table 2 process transition parameters
| Temperature deviation value | A |
| Fusion deviation value | B |
| Preset welding position | C |
| Upper section welding position | D |
| Historical seed crystal position adjustment | E |
| Historical welding locations | F |
TABLE 3 fusion-diameter parameters
In the embodiment of the present application, the above parameters are merely examples, and those skilled in the art may select different parameters according to requirements, which is not particularly limited in the embodiment of the present application.
Step 302, in response to the first input, a seed crystal preheating process is performed to lower the seed crystal to a first preheating position, and then a CCD vision system is used for detecting the real-time liquid level brightness value of the molten liquid, and a real-time deviation value is determined according to the real-time liquid level brightness value and the target liquid level brightness value.
And 303, when the real-time deviation value is larger than the temperature-adjusting deviation value (A), starting a temperature-adjusting procedure, and determining the relation between the real-time deviation value and the first preheating deviation value (Y1).
And 304, when the real-time deviation value is smaller than the first preheating deviation value (Y1), the seed crystal is lowered from the first preheating position to the second preheating position (L1).
And 305, when the real-time deviation value is smaller than the second preheating deviation value (Y2), the seed crystal is lowered from the second preheating position (L1) to the third preheating position (L2).
And 306, when the real-time deviation value is smaller than the third preheating deviation value (Y3), the seed crystal is lowered from the third preheating position (L2) to the fourth preheating position (L3).
Step 307, when the real-time deviation value is smaller than the fourth preheating deviation value (Y4), the seed crystal is lowered from the fourth preheating position (L3) to the fifth preheating position (L4).
And 308, when the real-time deviation value is smaller than the welding deviation value (B) and the seed crystal does not have the historical welding position (F), automatically lowering the seed crystal to the preset welding position (C) to execute the welding operation.
And 309, when the real-time deviation value is smaller than the welding deviation value (B) and the historical welding position (F) of the seed crystal exists, adjusting the historical seed crystal position adjustment amount (E) on the basis of the upper welding position (D) of the seed crystal in one section of welding so that the seed crystal is positioned at the historical welding position (F) and the welding operation is performed.
In the embodiment of the application, the upper welding position (D) is the welding position of the seed crystal in the previous welding, and the historical seed crystal position adjustment amount (E) is the deviation of the welding position of the seed crystal in the current welding relative to the upper welding position (D).
Step 310, detecting the welding diameter of the seed crystal through a CCD vision system.
Step 311, in the case that the welding diameter is smaller than the first preset welding diameter (J), lowering the seed crystal by a preset distance (G) at a preset speed (H), and re-performing the welding operation until the welding diameter is larger than or equal to the first preset welding diameter (J) and smaller than or equal to the second preset welding diameter (I).
And 312, alarming the welded seed crystal under the condition that the welding diameter is larger than the first preset welding diameter (J).
In the embodiment of the application, the real-time liquid level brightness value of the molten liquid is detected in the preheating process of the seed crystal, and the real-time deviation value of the real-time liquid level brightness value and the target liquid level brightness value is determined, wherein the target liquid level brightness value is the liquid level brightness value when the seeding operation is executed, at the moment, the position of the seed crystal can be adjusted to be lowered to the preheating position corresponding to the preheating deviation value when the real-time deviation value is smaller than the preheating deviation value, so that the seed crystal is fully preheated, and then the seed crystal is directly welded when the real-time deviation value is smaller than the welding deviation value, so that the operation of welding the seed crystal is standardized and automated, the welding success rate and the repeatability are improved, the productivity and the yield of products are improved, the labor cost is reduced, and the potential safety hazard is avoided.
Fig. 5 is a block diagram showing a structure of a single crystal fusion apparatus 40 according to an embodiment of the present application, and as shown in fig. 5, the apparatus may include:
the brightness value detection module 401 is used for detecting the real-time liquid level brightness value of the melt in the process of preheating the seed crystal;
the deviation value determining module 402 is configured to determine a real-time deviation value between the real-time liquid level brightness value and a target liquid level brightness value, where the target liquid level brightness value is a liquid level brightness value when performing a seeding operation;
a seed crystal preheating module 403, configured to adjust the position of the seed crystal to be lowered to a preheating position corresponding to the preheating offset value when the real-time offset value is smaller than the preheating offset value;
and a seed crystal welding module 405, configured to weld seed crystals when the real-time deviation value is smaller than the welding deviation value, where the welding deviation value is smaller than the preheating deviation value.
Optionally, the apparatus further comprises:
the diameter detection module is used for detecting the welding diameter of the welded seed crystal;
the seed crystal welding module 405 is further configured to adjust a welding position to perform welding again when the welding diameter is smaller than a first preset welding diameter, until the welding diameter is greater than or equal to the first preset welding diameter and smaller than or equal to the second preset welding diameter, where the second preset welding diameter is greater than the first preset welding diameter;
and the seed crystal warning module is used for warning the welded seed crystal under the condition that the welding diameter is larger than the second preset welding diameter.
Optionally, the apparatus further comprises:
the preheating starting module is used for responding to the first input, preheating the seed crystal and descending the position of the seed crystal to a first preheating position;
a seed preheating module comprising:
the first seed crystal preheating sub-module is used for descending the position of the seed crystal from the first preheating position to the second preheating position under the condition that the real-time deviation value is smaller than the first preheating deviation value;
a second seed crystal preheating sub-module for lowering the position of the seed crystal from the second preheating position to a third preheating position in the case that the real-time deviation value is smaller than the second preheating deviation value;
a third seed crystal preheating sub-module for lowering the position of the seed crystal from the third preheating position to a fourth preheating position under the condition that the real-time deviation value is smaller than the third preheating deviation value;
a fourth seed crystal preheating sub-module for lowering the position of the seed crystal from the fourth preheating position to a fifth preheating position under the condition that the real-time deviation value is smaller than the fourth preheating deviation value;
the magnitudes of the first preheating offset value, the second preheating offset value, the third preheating offset value and the fourth preheating offset value are sequentially reduced.
Optionally, the apparatus further comprises:
and the temperature regulation starting module is used for determining the relation between the real-time deviation value and the preheating deviation value under the condition that the real-time deviation value is larger than the temperature regulation deviation value, and the temperature regulation deviation value is larger than the preheating deviation value.
Optionally, the seed crystal fusion module comprises:
the historical welding sub-module is used for welding the seed crystal according to the historical welding position when the real-time deviation value is smaller than the welding deviation value and the historical welding position exists in the seed crystal;
and the preset welding submodule is used for welding the seed crystal according to the preset welding position under the condition that the real-time deviation value is smaller than the welding deviation value and the historical welding position of the seed crystal does not exist.
In the embodiment of the application, the real-time liquid level brightness value of the molten liquid is detected in the preheating process of the seed crystal, and the real-time deviation value of the real-time liquid level brightness value and the target liquid level brightness value is determined, wherein the target liquid level brightness value is the liquid level brightness value when the seeding operation is executed, at the moment, the position of the seed crystal can be adjusted to be lowered to the preheating position corresponding to the preheating deviation value when the real-time deviation value is smaller than the preheating deviation value, so that the seed crystal is fully preheated, and then the seed crystal is directly welded when the real-time deviation value is smaller than the welding deviation value, so that the operation of welding the seed crystal is standardized and automated, the welding success rate and the repeatability are improved, the productivity and the yield of products are improved, the labor cost is reduced, and the potential safety hazard is avoided.
The embodiment of the application also provides equipment, which is characterized by comprising the following components: the device comprises an interface, a bus and a memory, wherein the interface, the memory and the processor are connected through the bus, the memory is used for storing an executable program, and the processor is configured to run the executable program to realize the steps of the single crystal welding method as shown in any one of figures 1 to 3.
The embodiment of the application also provides a computer storage medium, which is characterized in that an executable program is stored on the computer readable storage medium, and the executable program is run by a processor to realize the steps of the single crystal welding method as shown in any one of fig. 1 to 3.
It should be noted that, for simplicity of description, the method embodiments are shown as a series of acts, but it should be understood by those skilled in the art that the embodiments are not limited by the order of acts, as some steps may occur in other orders or concurrently in accordance with the embodiments. Further, those skilled in the art will appreciate that the embodiments described in the specification are presently preferred, and that the acts are not necessarily all required in accordance with the embodiments of the application.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The embodiments of the present application have been described above with reference to the accompanying drawings, but the present application is not limited to the above-described embodiments, which are merely illustrative and not restrictive, and many forms may be made by those having ordinary skill in the art without departing from the spirit of the present application and the scope of the claims, which are to be protected by the present application.
Claims (8)
1. A method of single crystal fusion bonding, the method comprising:
detecting the real-time liquid level brightness value of the molten liquid in the process of preheating the seed crystal;
determining a real-time deviation value of the real-time liquid level brightness value and a target liquid level brightness value, wherein the target liquid level brightness value is a liquid level brightness value when the seeding operation is executed;
under the condition that the real-time deviation value is smaller than the preheating deviation value, the position of the seed crystal is adjusted to be lowered to a preheating position corresponding to the preheating deviation value;
under the condition that the real-time deviation value is smaller than the welding deviation value, welding the seed crystal, wherein the welding deviation value is smaller than the preheating deviation value;
wherein, when the real-time deviation value is smaller than the welding deviation value, after welding the seed crystal, the method further comprises:
detecting the welding diameter of the welded seed crystal;
under the condition that the welding diameter is smaller than a first preset welding diameter, adjusting a welding position to weld again until the welding diameter is larger than or equal to the first preset welding diameter and smaller than or equal to a second preset welding diameter, wherein the second preset welding diameter is larger than the first preset welding diameter;
and alarming the welded seed crystal under the condition that the welding diameter is larger than the second preset welding diameter.
2. The method of claim 1, wherein the step of detecting the real-time level brightness value of the melt prior to preheating the seed crystal comprises:
preheating the seed crystal in response to the first input, and lowering the position of the seed crystal to a first preheating position;
and under the condition that the real-time deviation value is smaller than the preheating deviation value, adjusting the position of the seed crystal to descend to a preheating position corresponding to the preheating deviation value, wherein the method comprises the following steps of:
lowering the position of the seed crystal from the first preheating position to a second preheating position under the condition that the real-time deviation value is smaller than a first preheating deviation value;
lowering the position of the seed crystal from the second preheating position to a third preheating position under the condition that the real-time deviation value is smaller than a second preheating deviation value;
lowering the position of the seed crystal from the third preheating position to a fourth preheating position under the condition that the real-time deviation value is smaller than a third preheating deviation value;
lowering the position of the seed crystal from the fourth preheating position to a fifth preheating position under the condition that the real-time deviation value is smaller than a fourth preheating deviation value;
the magnitudes of the first preheating offset value, the second preheating offset value, the third preheating offset value and the fourth preheating offset value are sequentially reduced.
3. The method according to claim 1, wherein, in the case that the real-time deviation value is smaller than the preheating deviation value, before the adjusting the position of the seed crystal is lowered to the preheating position corresponding to the preheating deviation value, further comprising:
and under the condition that the real-time deviation value is larger than the temperature-regulating deviation value, determining the relation between the real-time deviation value and the preheating deviation value, wherein the temperature-regulating deviation value is larger than the preheating deviation value.
4. The method of claim 1, wherein the welding the seed crystal if the real-time offset value is less than the welding offset value comprises:
under the condition that the real-time deviation value is smaller than the welding deviation value and a historical welding position exists in the seed crystal, welding the seed crystal according to the historical welding position;
and under the condition that the real-time deviation value is smaller than the welding deviation value and the seed crystal does not have a historical welding position, welding the seed crystal according to a preset welding position.
5. A single crystal fusion apparatus, the apparatus comprising:
the brightness value detection module is used for detecting the real-time liquid level brightness value of the molten liquid in the process of preheating the seed crystal;
the deviation value determining module is used for determining a real-time deviation value between the real-time liquid level brightness value and a target liquid level brightness value, wherein the target liquid level brightness value is a liquid level brightness value when the seeding operation is executed;
the seed crystal preheating module is used for adjusting the position of the seed crystal to be lowered to a preheating position corresponding to the preheating deviation value under the condition that the real-time deviation value is smaller than the preheating deviation value;
the seed crystal welding module is used for welding seed crystals under the condition that the real-time deviation value is smaller than the welding deviation value, and the welding deviation value is smaller than the preheating deviation value;
the apparatus further comprises:
the diameter detection module is used for detecting the welding diameter of the welded seed crystal;
the seed crystal welding module is further used for adjusting a welding position to weld again when the welding diameter is smaller than a first preset welding diameter, and the welding position is adjusted to be larger than or equal to the first preset welding diameter and smaller than or equal to a second preset welding diameter, and the second preset welding diameter is larger than the first preset welding diameter;
and the welding alarm module is used for alarming the welded seed crystal under the condition that the welding diameter is larger than the second preset welding diameter.
6. The apparatus of claim 5, wherein the apparatus further comprises:
the preheating starting module is used for responding to the first input, preheating the seed crystal and descending the position of the seed crystal to a first preheating position;
a seed preheating module comprising:
the first seed crystal preheating sub-module is used for descending the position of the seed crystal from the first preheating position to the second preheating position under the condition that the real-time deviation value is smaller than the first preheating deviation value;
a second seed crystal preheating sub-module for lowering the position of the seed crystal from the second preheating position to a third preheating position in the case that the real-time deviation value is smaller than the second preheating deviation value;
a third seed crystal preheating sub-module for lowering the position of the seed crystal from the third preheating position to a fourth preheating position under the condition that the real-time deviation value is smaller than the third preheating deviation value;
a fourth seed crystal preheating sub-module for lowering the position of the seed crystal from the fourth preheating position to a fifth preheating position under the condition that the real-time deviation value is smaller than the fourth preheating deviation value;
the magnitudes of the first preheating offset value, the second preheating offset value, the third preheating offset value and the fourth preheating offset value are sequentially reduced.
7. An apparatus, the apparatus comprising: an interface, a bus, a memory and a processor, said interface, memory and processor being connected by said bus, said memory being for storing an executable program, said processor being configured to run said executable program to implement the steps of the single crystal fusion method according to any one of claims 1 to 4.
8. A computer storage medium, characterized in that the computer-readable storage medium stores thereon an executable program that is executed by a processor to realize the steps of the single crystal fusion method according to any one of claims 1 to 4.
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| CN115418710A (en) * | 2022-09-03 | 2022-12-02 | 北京北方华创真空技术有限公司 | Full-automatic seed crystal lowering welding method and device for single crystal and electronic equipment |
| CN115434010A (en) * | 2022-10-17 | 2022-12-06 | 四川晶科能源有限公司 | Automatic welding method and monocrystalline silicon |
| CN116219535B (en) * | 2023-05-08 | 2023-07-18 | 苏州晨晖智能设备有限公司 | Crystal growth method |
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