CN113403678A - Single crystal welding method, device, equipment and computer readable storage medium - Google Patents
Single crystal welding method, device, equipment and computer readable storage medium Download PDFInfo
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- CN113403678A CN113403678A CN202110640065.2A CN202110640065A CN113403678A CN 113403678 A CN113403678 A CN 113403678A CN 202110640065 A CN202110640065 A CN 202110640065A CN 113403678 A CN113403678 A CN 113403678A
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- 239000013078 crystal Substances 0.000 title claims abstract description 258
- 238000003466 welding Methods 0.000 title claims abstract description 232
- 238000000034 method Methods 0.000 title claims abstract description 81
- 238000003860 storage Methods 0.000 title claims abstract description 10
- 239000007788 liquid Substances 0.000 claims abstract description 106
- 230000008569 process Effects 0.000 claims abstract description 42
- 238000010899 nucleation Methods 0.000 claims abstract description 19
- 230000004927 fusion Effects 0.000 claims description 61
- 238000001514 detection method Methods 0.000 claims description 7
- 239000000155 melt Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 4
- 230000004044 response Effects 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000010586 diagram Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 238000007500 overflow downdraw method Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000013459 approach Methods 0.000 description 2
- 238000002109 crystal growth method Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000007664 blowing Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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Abstract
The invention provides a single crystal welding method, a single crystal welding device, single crystal welding equipment and a computer readable storage medium, and relates to the technical field of solar photovoltaics. The method can detect the real-time liquid level brightness value of the molten liquid in the seed crystal preheating process, and determine the real-time deviation value between the real-time liquid level brightness value and the target liquid level brightness value, wherein the target liquid level brightness value is the liquid level brightness value when the seeding operation is executed, at the moment, the position of the seed crystal can be adjusted to be lowered to the preheating position corresponding to the preheating deviation value when the real-time deviation value is smaller than the preheating deviation value, so that the seed crystal is fully preheated, and then the seed crystal is directly welded when the real-time deviation value is smaller than the welding deviation value, the welding operation of the seed crystal is standardized and automated, the welding success rate and reproducibility are improved, the production rate and the yield of products are improved, the labor cost is reduced, and the potential safety hazard is avoided.
Description
Technical Field
The invention relates to the technical field of solar photovoltaics, in particular to a single crystal welding method, a single crystal welding device, single crystal welding equipment and a computer readable storage medium.
Background
The Czochralski (Cz) method is one of the commonly used crystal growth methods, in which a raw material silicon is heated and melted in a single crystal furnace, and a rod-shaped seed crystal is immersed in the melt, so that silicon atoms in the melt form regular crystals on a solid-liquid interface along the arrangement structure of the silicon atoms on the seed crystal, thereby forming a single crystal.
The welding is a key step in the temperature adjusting-seeding process, when the proper temperature condition is reached, the welding operation needs to be carried out in time, otherwise, the welding quality is influenced, and the line breakage is caused in the shouldering process; meanwhile, the seed crystals need to be preheated in the welding operation, and whether the seed crystals are preheated or not can directly influence the welding quality, so that potential safety hazards are caused.
At present, in the preheating-welding process of seed crystals, the manual operation of workers is needed, the workers are required to automatically judge the time for executing the welding operation, or the preheating degree of the seed crystals is low in success rate and poor in repeatability, and potential safety hazards and high in labor cost exist.
Disclosure of Invention
The invention provides a single crystal welding method, a single crystal welding device, single crystal welding equipment and a computer readable storage medium, and aims to reduce time and labor cost in a single crystal welding process, improve the success rate and repeatability of welding operation and avoid potential safety hazards.
In a first aspect, an embodiment of the present invention provides a single crystal welding method, which may include:
detecting the real-time liquid level brightness value of the molten liquid in the seed crystal preheating process;
determining a real-time deviation value between the real-time liquid level brightness value and a target liquid level brightness value, wherein the target liquid level brightness value is a liquid level brightness value when seeding operation is executed;
under the condition that the real-time deviation value is smaller than the preheating deviation value, adjusting the position of the seed crystal to descend to a preheating position corresponding to the preheating deviation value;
and under the condition that the real-time deviation value is smaller than the fusion welding deviation value, fusing the seed crystals, wherein the fusion welding deviation value is smaller than the preheating deviation value.
Optionally, after the fusing the seed crystal under the condition that the real-time deviation value is smaller than the fusing deviation value, the method further includes:
detecting the fusion diameter of the seed crystal after fusion;
under the condition that the welding diameter is smaller than a first preset welding diameter, adjusting a welding position to weld again until the welding diameter is larger than or equal to the first preset welding diameter and smaller than or equal to a second preset welding diameter, wherein the second preset welding diameter is larger than the first preset welding diameter;
and under the condition that the welding diameter is larger than the second preset welding diameter, alarming the welded seed crystal.
Optionally, before detecting the real-time liquid level brightness value of the melt liquid during the seed crystal preheating process, the method includes:
in response to the first input, the seed crystal is preheated and the position of the seed crystal is lowered to a first preheating position.
Optionally, the adjusting the position of the seed crystal to be lowered to the preheating position corresponding to the preheating deviation value under the condition that the real-time deviation value is smaller than the preheating deviation value includes:
lowering the position of the seed crystal from the first preheating position to a second preheating position under the condition that the real-time deviation value is smaller than a first preheating deviation value;
lowering the position of the seed crystal from the second preheating position to a third preheating position under the condition that the real-time deviation value is smaller than a second preheating deviation value;
lowering the position of the seed crystal from the third preheating position to a fourth preheating position under the condition that the real-time deviation value is smaller than a third preheating deviation value;
lowering the position of the seed crystal from the fourth preheating position to a fifth preheating position under the condition that the real-time deviation value is smaller than a fourth preheating deviation value;
the sizes of the first preheating deviation value, the second preheating deviation value, the third preheating deviation value and the fourth preheating deviation value are reduced in sequence.
Optionally, when the real-time deviation value is smaller than the preheating deviation value, before the adjusting the position of the seed crystal is lowered to the preheating position corresponding to the preheating deviation value, the method further includes:
and determining the relation between the real-time deviation value and the preheating deviation value under the condition that the real-time deviation value is larger than the temperature regulation deviation value, wherein the temperature regulation deviation value is larger than the preheating deviation value.
Optionally, the welding the seed crystal when the real-time deviation value is smaller than the welding deviation value includes:
when the real-time deviation value is smaller than the fusion welding deviation value and the seed crystal has a historical fusion welding position, fusion welding is carried out on the seed crystal according to the historical fusion welding position;
and under the condition that the real-time deviation value is smaller than the fusion welding deviation value and the seed crystal does not have a historical fusion welding position, fusing the seed crystal according to a preset fusion welding position.
In a second aspect, embodiments of the present invention provide a single crystal fusion apparatus, which may include:
the brightness value detection module is used for detecting the real-time liquid level brightness value of the molten liquid in the seed crystal preheating process;
the deviation value determining module is used for determining a real-time deviation value between the real-time liquid level brightness value and a target liquid level brightness value, wherein the target liquid level brightness value is a liquid level brightness value when seeding operation is executed;
the seed crystal preheating module is used for adjusting the position of the seed crystal to descend to a preheating position corresponding to the preheating deviation value under the condition that the real-time deviation value is smaller than the preheating deviation value;
and the seed crystal welding module is used for welding the seed crystal under the condition that the real-time deviation value is smaller than the welding deviation value, and the welding deviation value is smaller than the preheating deviation value.
The diameter detection module is used for detecting the welding diameter of the seed crystal after welding;
the seed crystal welding module is further used for adjusting a welding position to weld again under the condition that the welding diameter is smaller than a first preset welding diameter until the welding diameter is larger than or equal to the first preset welding diameter and smaller than or equal to a second preset welding diameter, and the second preset welding diameter is larger than the first preset welding diameter;
and the seed crystal alarming module is used for alarming the seed crystal after welding under the condition that the welding diameter is larger than the second preset welding diameter.
Optionally, the apparatus further comprises:
the preheating starting module is used for responding to the first input, preheating the seed crystal and descending the position of the seed crystal to a first preheating position;
a seed crystal preheating module comprising:
the first seed crystal preheating submodule is used for lowering the position of the seed crystal from the first preheating position to a second preheating position under the condition that the real-time deviation value is smaller than a first preheating deviation value;
the second seed crystal preheating submodule is used for descending the position of the seed crystal from the second preheating position to a third preheating position under the condition that the real-time deviation value is smaller than a second preheating deviation value;
the third seed crystal preheating submodule is used for lowering the position of the seed crystal from the third preheating position to a fourth preheating position under the condition that the real-time deviation value is smaller than a third preheating deviation value;
the fourth seed crystal preheating submodule is used for lowering the position of the seed crystal from the fourth preheating position to a fifth preheating position under the condition that the real-time deviation value is smaller than a fourth preheating deviation value;
the sizes of the first preheating deviation value, the second preheating deviation value, the third preheating deviation value and the fourth preheating deviation value are reduced in sequence.
Optionally, the apparatus further comprises:
and the temperature regulation starting module is used for determining the relation between the real-time deviation value and the preheating deviation value under the condition that the real-time deviation value is greater than the temperature regulation deviation value, and the temperature regulation deviation value is greater than the preheating deviation value.
Optionally, a seed fusion module, comprising:
the historical welding submodule is used for welding the seed crystals according to the historical welding positions when the real-time deviation value is smaller than the welding deviation value and the seed crystals have the historical welding positions;
and the preset welding submodule is used for welding the seed crystal according to the preset welding position under the condition that the real-time deviation value is smaller than the welding deviation value and the seed crystal does not have the historical welding position.
In a third aspect, an embodiment of the present invention further provides an apparatus, where the apparatus includes: an interface, a bus, a memory and a processor, wherein the interface, the memory and the processor are connected through the bus, the memory is used for storing an executable program, and the processor is configured to run the executable program to realize the steps of the single crystal welding method according to the first aspect.
In a fourth aspect, the present invention further provides a computer storage medium, on which an executable program is stored, where the executable program is executed by a processor to implement the steps of the single crystal welding method according to the first aspect.
In the embodiment of the invention, in the process of preheating the seed crystal, the real-time liquid level brightness value of the molten liquid is detected, and the real-time deviation value between the real-time liquid level brightness value and the target liquid level brightness value is determined, wherein the target liquid level brightness value is the liquid level brightness value when the seeding operation is executed, at the moment, the position of the seed crystal can be adjusted to be lowered to the preheating position corresponding to the preheating deviation value when the real-time deviation value is smaller than the preheating deviation value, so that the seed crystal is fully preheated, and then the seed crystal is directly welded when the real-time deviation value is smaller than the welding deviation value, so that the welding operation of the seed crystal is standardized and automated, the welding success rate and reproducibility are improved, the production rate and the yield of products are improved, the labor cost is reduced, and the potential safety hazard is avoided.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments of the present invention will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without inventive labor.
FIG. 1 is a flow chart illustrating the steps of a single crystal fusion method according to an embodiment of the present invention;
FIG. 2 is a flow chart illustrating steps of another single crystal fusion method provided by an embodiment of the present invention;
FIG. 3 is a schematic diagram illustrating an exemplary application of a single crystal fusion method according to an embodiment of the present invention;
FIG. 4 illustrates a schematic interface diagram of a process step provided by an embodiment of the present invention;
fig. 5 is a block diagram illustrating a single crystal fusion apparatus according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The Czochralski method in the related art is a commonly used crystal growth method, and is realized by heating and melting polycrystalline silicon, and performing the steps of seed crystal immersion, fusion welding, seeding, shouldering, shoulder rotating, diameter equalizing, ending and the like at a proper temperature, wherein the process from fusion welding to seeding is generally completed by manual operation, and the method increases the time and labor cost and can also cause the hidden danger of subsequent shouldering and wire breaking.
Fig. 1 is a flow chart illustrating steps of a single crystal fusion method according to an embodiment of the present invention, and referring to fig. 1, the method may include:
In the embodiment of the invention, after the seed crystal is immersed in the molten liquid of the silicon raw material, a bright aperture is formed at the boundary of the solid crystal and the liquid molten liquid in the crystal pulling process and is formed by the reflection of the meniscus surface at the solid-liquid boundary to heat radiation, wherein the real-time liquid level brightness value of the molten liquid is the brightness value of the aperture, and the detection of the real-time liquid level brightness value of the molten liquid is continuously carried out. Optionally, a CCD (Charge Coupled Device) vision system may be used to detect and digitize the brightness of the liquid level to obtain a real-time liquid level brightness value, or another optical sensing Device may also be used to detect the real-time liquid level brightness value of the melt, which is not limited in the embodiment of the present invention.
And 102, determining a real-time deviation value between the real-time liquid level brightness value and a target liquid level brightness value, wherein the target liquid level brightness value is a liquid level brightness value when seeding operation is executed.
In the embodiment of the present invention, the target liquid level brightness value is a liquid level brightness value when the seeding operation is performed, that is, when the real-time liquid level brightness value of the melt gradually approaches the target liquid level brightness value, the state of the single crystal growth process gradually approaches the seeding operation is determined, and according to a deviation of the real-time liquid level brightness value from the target liquid level brightness value, the current state of the single crystal growth can be determined, so as to determine the operation performed on the seed crystal.
And 103, under the condition that the real-time deviation value is smaller than the preheating deviation value, adjusting the position of the seed crystal to descend to the preheating position corresponding to the preheating deviation value.
In the embodiment of the invention, the preheating deviation value is a condition threshold value for preheating the seed crystal, wherein the preheating deviation value corresponds to the preheating position of the seed crystal, so that the adjustment of the preheating position of the seed crystal can be determined according to the relation between the real-time deviation value and the preheating deviation value, and if the real-time deviation value meets the preheating deviation value, the preheating position of the seed crystal is adjusted to the preheating position corresponding to the preheating deviation value.
And 103, fusing the seed crystals under the condition that the real-time deviation value is smaller than a fusion deviation value, wherein the fusion deviation value is smaller than the preheating deviation value.
In the embodiment of the invention, the welding deviation value is a condition threshold value for performing welding operation on the seed crystal, and the growth state of the single crystal is closer to the growth state of the single crystal during seeding operation than the preheating process when the welding operation is performed on the seed crystal, so the welding deviation value is smaller than the preheating deviation value, the real-time deviation value between the real-time liquid level brightness value and the target liquid level brightness value is gradually reduced after the preheating position is adjusted along with the advancing of the preheating process, when the real-time deviation value is reduced to meet the welding deviation value, the seed crystal can be considered to be fully preheated, and the welding operation is directly performed according to the judgment result.
In the embodiment of the invention, in the process of preheating the seed crystal, the real-time liquid level brightness value of the molten liquid is detected, and the real-time deviation value between the real-time liquid level brightness value and the target liquid level brightness value is determined, wherein the target liquid level brightness value is the liquid level brightness value when the seeding operation is executed, at the moment, the position of the seed crystal can be adjusted to be lowered to the preheating position corresponding to the preheating deviation value when the real-time deviation value is smaller than the preheating deviation value, so that the seed crystal is fully preheated, and then the seed crystal is directly welded when the real-time deviation value is smaller than the welding deviation value, so that the welding operation of the seed crystal is standardized and automated, the welding success rate and reproducibility are improved, the production rate and the yield of products.
Fig. 2 is a flow chart illustrating steps of another single crystal fusion method according to an embodiment of the present invention, which may include, as shown in fig. 2:
In the embodiment of the present invention, the first input is an input for instructing, with respect to the process equipment, to perform automatic preheating and fusing on the seed crystal, and optionally, the first input may include setting operations on a preheating deviation value, a fusing deviation value, a preheating position, and the like, and may also include a starting operation on a preheating process. After receiving the first input, the seed crystal may be preheated in response to the first input, and in particular, the position of the seed crystal may be lowered to the first preheating position to preheat the seed crystal.
In the embodiment of the present invention, step 202 may correspond to the related description of step 101, and is not described herein again to avoid repetition.
And 203, determining a real-time deviation value between the real-time liquid level brightness value and a target liquid level brightness value, wherein the target liquid level brightness value is a liquid level brightness value when seeding operation is executed.
In the embodiment of the present invention, step 203 may correspond to the related description of step 102, and is not described herein again to avoid repetition.
And 204, determining the relation between the real-time deviation value and the preheating deviation value under the condition that the real-time deviation value is larger than the temperature regulation deviation value, wherein the temperature regulation deviation value is larger than the preheating deviation value.
In the embodiment of the invention, the temperature regulation deviation value refers to a condition threshold value for regulating the temperature in the seed crystal preheating process, the temperature regulation deviation value is larger than the preheating deviation value, and in the preheating process, when the real-time deviation value is larger than the temperature regulation deviation value, the temperature regulation in the current single crystal growth process can be considered to be required, so that the preheating state of the seed crystal is changed, namely the relationship between the real-time deviation value and the preheating deviation value can be further determined, and the preheating position of the seed crystal is adjusted according to the determination result so as to adjust the preheating state of the seed crystal.
And 205, lowering the position of the seed crystal from the first preheating position to a second preheating position under the condition that the real-time deviation value is smaller than the first preheating deviation value.
And 206, lowering the position of the seed crystal from the second preheating position to a third preheating position under the condition that the real-time deviation value is smaller than a second preheating deviation value.
And step 207, lowering the position of the seed crystal from the third preheating position to a fourth preheating position under the condition that the real-time deviation value is smaller than a third preheating deviation value.
And 208, lowering the position of the seed crystal from the fourth preheating position to a fifth preheating position under the condition that the real-time deviation value is smaller than a fourth preheating deviation value.
Optionally, the magnitudes of the first preheating deviation value, the second preheating deviation value, the third preheating deviation value and the fourth preheating deviation value are sequentially reduced.
In the embodiment of the present invention, steps 205 to 209 are performed by adjusting the preheating position according to the preheating deviation value, wherein the preheating deviation value may include a first preheating deviation value, a second preheating deviation value, a third preheating deviation value and a fourth preheating deviation value, which are sequentially decreased in magnitude, and respectively correspond to a second preheating position, a third preheating position, a fourth preheating position and a fifth preheating position, which are gradually decreased in magnitude, and in the process of continuously detecting the brightness value of the real-time liquid level, the determined real-time deviation value is gradually decreased to be gradually smaller than the first preheating deviation value, the second preheating deviation value, the third preheating deviation value and the fourth preheating deviation value, so as to sequentially decrease the preheating position of the seed crystal from the first preheating position to the second preheating position, the third preheating position, the fourth preheating position and the fifth preheating position. Optionally, the number of the preheating deviation values and the corresponding relationship between the preheating deviation values and the preheating positions may be set by those skilled in the art according to actual requirements, which is not particularly limited in the embodiment of the present invention.
And 209, under the condition that the real-time deviation value is smaller than the fusion welding deviation value and the seed crystal has a historical fusion welding position, fusing the seed crystal according to the historical fusion welding position, wherein the fusion welding deviation value is smaller than the preheating deviation value.
In the embodiment of the invention, the seed crystal can be subjected to welding operation, at the moment, the seed crystal has a historical welding position, when the real-time deviation value is smaller than the welding deviation value, the seed crystal can be considered to be fully preheated, and at the moment, the seed crystal can be welded again from the historical welding position.
And step 210, welding the seed crystal according to a preset welding position under the condition that the real-time deviation value is smaller than the welding deviation value and the seed crystal does not have a historical welding position.
In the embodiment of the present invention, the seed crystal may not receive the overwelding operation, at this time, the seed crystal does not have a historical welding position, and when the real-time deviation value is smaller than the welding deviation value, it may be considered that the seed crystal has been sufficiently preheated, at this time, the seed crystal may be welded from the preset welding position, optionally, whether the seed crystal has the historical welding position or the preset welding position of the seed crystal may be determined by the setting of the first input, or the diameter of the seed crystal may also be detected, and whether the seed crystal receives the overwelding operation is determined according to the diameter, which is not specifically limited in the embodiment of the present invention.
And step 211, detecting the fusion diameter of the seed crystal after fusion.
In the embodiment of the invention, the welding diameter of the seed crystal can be detected after the seed crystal is welded, and optionally, a CCD vision system can be adopted to detect the size of the aperture so as to determine the welding diameter of the seed crystal.
And 212, under the condition that the welding diameter is smaller than a first preset welding diameter, adjusting the welding position to weld again until the welding diameter is larger than or equal to the first preset welding diameter and smaller than or equal to a second preset welding diameter, wherein the second preset welding diameter is larger than the first preset welding diameter.
In the embodiment of the invention, according to the subsequent process requirements and the product quality requirements, the fusion diameter is in a required range, for example, a lower threshold limit of a first preset fusion diameter and an upper threshold limit of a second preset fusion diameter larger than the first preset fusion diameter are used as threshold limits, the success of fusion operation is determined under the condition that the fusion diameter is larger than or equal to the first preset fusion diameter and is smaller than or equal to the second preset fusion diameter, the next process step is carried out, the fusion diameter is considered to be thinner under the condition that the fusion diameter is smaller than the first preset fusion diameter, at the moment, the fusion position of the seed crystal can be adjusted to be fused again, so that the obtained fusion diameter is in the required range, optionally, the fusion position of the seed crystal can be adjusted at a preset descending speed to reduce a preset distance for re-fusing, for example, the preset distance can be 2mm, 3mm and the like, and the preset speed, the preset fusion position of the seed crystal can be reduced, The preset distance is not particularly limited.
And 213, giving an alarm to the seed crystal after welding when the welding diameter is larger than the second preset welding diameter.
In the embodiment of the invention, when the welding diameter is larger than the second preset welding diameter, the welding operation can be considered to fail, and the next process cannot be carried out, at this time, the welded seed crystal can be warned so as to prompt the process failure, and optionally, various parameters in the preheating-welding process of the scheme can be further recorded so as to avoid the occurrence of similar process failures in the subsequent preheating-welding process, and the process production efficiency is improved.
In the embodiment of the invention, in the process of preheating the seed crystal, the real-time liquid level brightness value of the molten liquid is detected, and the real-time deviation value between the real-time liquid level brightness value and the target liquid level brightness value is determined, wherein the target liquid level brightness value is the liquid level brightness value when the seeding operation is executed, at the moment, the position of the seed crystal can be adjusted to be lowered to the preheating position corresponding to the preheating deviation value when the real-time deviation value is smaller than the preheating deviation value, so that the seed crystal is fully preheated, and then the seed crystal is directly welded when the real-time deviation value is smaller than the welding deviation value, so that the welding operation of the seed crystal is standardized and automated, the welding success rate and reproducibility are improved, the production rate and the yield of products are improved, the labor cost is reduced, and the potential safety hazard is avoided.
Fig. 3 is a schematic diagram illustrating an application example of a single crystal welding method according to an embodiment of the present invention, and as shown in fig. 3, the method may include:
Fig. 4 is a schematic view of an interface of a process step provided in an embodiment of the present invention, as shown in fig. 4, the process step further includes a "full-automatic" function key in addition to the function keys of "melting", "secondary charging", "high temperature preparation", "shoulder rotation", "constant diameter", "ending", and "blowing out", wherein the "full-automatic" function key is used for starting the automatic seed crystal preheating-welding function.
In the embodiment of the invention, the automatic judgment can be realized by presetting parameters in the automatic seed crystal preheating-welding function, and optionally, the parameters shown in the following table can be included:
TABLE 1 preheat offset and preheat position
| Deviation value of preheating | Parameter identification | Preheating position | Parameter identification |
| First preheating deviation value | Y1 | Second preheating position | L1 |
| Second offset of preheat | Y2 | Third preheating position | L2 |
| Third preheat offset value | Y3 | Fourth preheating position | L3 |
| Fourth offset of preheating | Y4 | Fifth preheating position | L4 |
TABLE 2 Process transition parameters
| Deviation value of temperature regulation | A |
| Deviation value of fusion | B |
| Presetting a welding position | C |
| Upper segment welding position | D |
| Adjustment of historical seed crystal position | E |
| Historical weld location | F |
TABLE 3 fusion-diameter parameters
In the embodiment of the present invention, the above parameters are only used as examples, and a person skilled in the art may select different parameters according to needs, and the embodiment of the present invention is not limited to this specifically.
And 302, responding to the first input, executing a seed crystal preheating process to lower the seed crystal to a first preheating position, detecting the real-time liquid level brightness value of the molten liquid through a CCD vision system, and determining a real-time deviation value according to the real-time liquid level brightness value and the target liquid level brightness value.
And step 303, when the real-time deviation value is larger than the temperature regulation deviation value (A), starting a temperature regulation process, and determining the relation between the real-time deviation value and the first preheating deviation value (Y1).
And 304, when the real-time deviation value is smaller than the first preheating deviation value (Y1), lowering the seed crystal from the first preheating position to a second preheating position (L1).
And 305, when the real-time deviation value is smaller than the second preheating deviation value (Y2), descending the seed crystal from the second preheating position (L1) to a third preheating position (L2).
And 306, when the real-time deviation value is smaller than the third preheating deviation value (Y3), descending the seed crystal from the third preheating position (L2) to a fourth preheating position (L3).
And 307, when the real-time deviation value is less than the fourth preheating deviation value (Y4), lowering the seed crystal from the fourth preheating position (L3) to the fifth preheating position (L4).
And 308, when the real-time deviation value is smaller than the welding deviation value (B) and the seed crystal does not have a historical welding position (F), automatically descending the seed crystal to a preset welding position (C) to execute welding operation.
And 309, when the real-time deviation value is smaller than the fusion welding deviation value (B) and the seed crystal has the historical fusion welding position (F), adjusting the historical seed crystal position adjustment amount (E) on the basis of the upper fusion welding position (D) when the seed crystal is fused at the upper section, so that the seed crystal is positioned at the historical fusion welding position (F) and fusion welding operation is executed.
In the embodiment of the invention, the upper-stage welding position (D) is the welding position of the seed crystal at the previous welding, and the historical seed crystal position adjustment amount (E) is the deviation of the welding position of the current welding of the seed crystal relative to the upper-stage welding position (D).
And 310, detecting the fusion diameter of the seed crystal through a CCD vision system.
And 311, under the condition that the welding diameter is smaller than the first preset welding diameter (J), descending the seed crystal at a preset speed (H) for a preset distance (G), and performing welding operation again until the welding diameter is larger than or equal to the first preset welding diameter (J) and smaller than or equal to the second preset welding diameter (I).
And step 312, under the condition that the welding diameter is larger than the first preset welding diameter (J), alarming is carried out on the welded seed crystal.
In the embodiment of the invention, in the process of preheating the seed crystal, the real-time liquid level brightness value of the molten liquid is detected, and the real-time deviation value between the real-time liquid level brightness value and the target liquid level brightness value is determined, wherein the target liquid level brightness value is the liquid level brightness value when the seeding operation is executed, at the moment, the position of the seed crystal can be adjusted to be lowered to the preheating position corresponding to the preheating deviation value when the real-time deviation value is smaller than the preheating deviation value, so that the seed crystal is fully preheated, and then the seed crystal is directly welded when the real-time deviation value is smaller than the welding deviation value, so that the welding operation of the seed crystal is standardized and automated, the welding success rate and reproducibility are improved, the production rate and the yield of products are improved, the labor cost is reduced, and the potential safety hazard is avoided.
Fig. 5 is a block diagram of a single crystal welding apparatus 40 according to an embodiment of the present invention, and as shown in fig. 5, the apparatus may include:
the brightness value detection module 401 is used for detecting the real-time liquid level brightness value of the molten liquid in the seed crystal preheating process;
a deviation value determining module 402, configured to determine a real-time deviation value between the real-time liquid level brightness value and a target liquid level brightness value, where the target liquid level brightness value is a liquid level brightness value when a seeding operation is performed;
the seed crystal preheating module 403 is configured to adjust the position of the seed crystal to fall to a preheating position corresponding to the preheating deviation value when the real-time deviation value is smaller than the preheating deviation value;
and the seed crystal welding module 405 is used for welding the seed crystals under the condition that the real-time deviation value is smaller than the welding deviation value, and the welding deviation value is smaller than the preheating deviation value.
Optionally, the apparatus further comprises:
the diameter detection module is used for detecting the welding diameter of the seed crystal after welding;
the seed crystal welding module 405 is further configured to adjust a welding position to perform welding again when the welding diameter is smaller than a first preset welding diameter until the welding diameter is greater than or equal to the first preset welding diameter and smaller than or equal to a second preset welding diameter, where the second preset welding diameter is greater than the first preset welding diameter;
and the seed crystal alarming module is used for alarming the seed crystal after welding under the condition that the welding diameter is larger than the second preset welding diameter.
Optionally, the apparatus further comprises:
the preheating starting module is used for responding to the first input, preheating the seed crystal and descending the position of the seed crystal to a first preheating position;
a seed crystal preheating module comprising:
the first seed crystal preheating submodule is used for lowering the position of the seed crystal from the first preheating position to a second preheating position under the condition that the real-time deviation value is smaller than a first preheating deviation value;
the second seed crystal preheating submodule is used for descending the position of the seed crystal from the second preheating position to a third preheating position under the condition that the real-time deviation value is smaller than a second preheating deviation value;
the third seed crystal preheating submodule is used for lowering the position of the seed crystal from the third preheating position to a fourth preheating position under the condition that the real-time deviation value is smaller than a third preheating deviation value;
the fourth seed crystal preheating submodule is used for lowering the position of the seed crystal from the fourth preheating position to a fifth preheating position under the condition that the real-time deviation value is smaller than a fourth preheating deviation value;
the sizes of the first preheating deviation value, the second preheating deviation value, the third preheating deviation value and the fourth preheating deviation value are reduced in sequence.
Optionally, the apparatus further comprises:
and the temperature regulation starting module is used for determining the relation between the real-time deviation value and the preheating deviation value under the condition that the real-time deviation value is greater than the temperature regulation deviation value, and the temperature regulation deviation value is greater than the preheating deviation value.
Optionally, a seed fusion module, comprising:
the historical welding submodule is used for welding the seed crystals according to the historical welding positions when the real-time deviation value is smaller than the welding deviation value and the seed crystals have the historical welding positions;
and the preset welding submodule is used for welding the seed crystal according to the preset welding position under the condition that the real-time deviation value is smaller than the welding deviation value and the seed crystal does not have the historical welding position.
In the embodiment of the invention, in the process of preheating the seed crystal, the real-time liquid level brightness value of the molten liquid is detected, and the real-time deviation value between the real-time liquid level brightness value and the target liquid level brightness value is determined, wherein the target liquid level brightness value is the liquid level brightness value when the seeding operation is executed, at the moment, the position of the seed crystal can be adjusted to be lowered to the preheating position corresponding to the preheating deviation value when the real-time deviation value is smaller than the preheating deviation value, so that the seed crystal is fully preheated, and then the seed crystal is directly welded when the real-time deviation value is smaller than the welding deviation value, so that the welding operation of the seed crystal is standardized and automated, the welding success rate and reproducibility are improved, the production rate and the yield of products are improved, the labor cost is reduced, and the potential safety hazard is avoided.
An embodiment of the present invention further provides an apparatus, where the apparatus includes: an interface, a bus, a memory and a processor, wherein the interface, the memory and the processor are connected through the bus, the memory is used for storing an executable program, and the processor is configured to run the executable program to realize the steps of the single crystal welding method as shown in any one of the figures 1 to 3.
An embodiment of the present invention further provides a computer storage medium, where the computer storage medium stores an executable program, and the executable program is executed by a processor to implement the steps of the single crystal welding method as shown in any one of fig. 1 to 3.
It should be noted that, for simplicity of description, the method embodiments are described as a series of acts or combination of acts, but those skilled in the art will recognize that the embodiments are not limited by the order of acts described, as some steps may occur in other orders or concurrently depending on the embodiments. Further, those skilled in the art will appreciate that the embodiments described in the specification are presently preferred and that no particular act is required to implement the embodiments of the application.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
While the present invention has been described with reference to the embodiments shown in the drawings, the present invention is not limited to the embodiments, which are illustrative and not restrictive, and it will be apparent to those skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (10)
1. A method of single crystal fusion, the method comprising:
detecting the real-time liquid level brightness value of the molten liquid in the seed crystal preheating process;
determining a real-time deviation value between the real-time liquid level brightness value and a target liquid level brightness value, wherein the target liquid level brightness value is a liquid level brightness value when seeding operation is executed;
under the condition that the real-time deviation value is smaller than the preheating deviation value, adjusting the position of the seed crystal to descend to a preheating position corresponding to the preheating deviation value;
and under the condition that the real-time deviation value is smaller than the fusion welding deviation value, fusing the seed crystals, wherein the fusion welding deviation value is smaller than the preheating deviation value.
2. The method of claim 1, wherein after the fusing the seed crystal if the real-time deviation value is less than the fusing deviation value, further comprising:
detecting the fusion diameter of the seed crystal after fusion;
under the condition that the welding diameter is smaller than a first preset welding diameter, adjusting a welding position to weld again until the welding diameter is larger than or equal to the first preset welding diameter and smaller than or equal to a second preset welding diameter, wherein the second preset welding diameter is larger than the first preset welding diameter;
and under the condition that the welding diameter is larger than the second preset welding diameter, alarming the welded seed crystal.
3. The method as claimed in claim 1, wherein before detecting the real-time level brightness value of the melt liquid during the preheating of the seed crystal, the method comprises:
preheating the seed crystal in response to the first input, and lowering the position of the seed crystal to a first preheating position;
under the condition that the real-time deviation value is smaller than the preheating deviation value, the position of the seed crystal is adjusted to descend to the preheating position corresponding to the preheating deviation value, and the method comprises the following steps:
lowering the position of the seed crystal from the first preheating position to a second preheating position under the condition that the real-time deviation value is smaller than a first preheating deviation value;
lowering the position of the seed crystal from the second preheating position to a third preheating position under the condition that the real-time deviation value is smaller than a second preheating deviation value;
lowering the position of the seed crystal from the third preheating position to a fourth preheating position under the condition that the real-time deviation value is smaller than a third preheating deviation value;
lowering the position of the seed crystal from the fourth preheating position to a fifth preheating position under the condition that the real-time deviation value is smaller than a fourth preheating deviation value;
the sizes of the first preheating deviation value, the second preheating deviation value, the third preheating deviation value and the fourth preheating deviation value are reduced in sequence.
4. The method as claimed in claim 1, wherein in the case that the real-time deviation value is smaller than the pre-heating deviation value, the adjusting the position of the seed crystal is lowered to a pre-heating position corresponding to the pre-heating deviation value, further comprising:
and determining the relation between the real-time deviation value and the preheating deviation value under the condition that the real-time deviation value is larger than the temperature regulation deviation value, wherein the temperature regulation deviation value is larger than the preheating deviation value.
5. The method of claim 1, wherein fusing the seed crystal in the event that the real-time deviation value is less than the fusion deviation value comprises:
when the real-time deviation value is smaller than the fusion welding deviation value and the seed crystal has a historical fusion welding position, fusion welding is carried out on the seed crystal according to the historical fusion welding position;
and under the condition that the real-time deviation value is smaller than the fusion welding deviation value and the seed crystal does not have a historical fusion welding position, fusing the seed crystal according to a preset fusion welding position.
6. A single crystal fusion apparatus, comprising:
the brightness value detection module is used for detecting the real-time liquid level brightness value of the molten liquid in the seed crystal preheating process;
the deviation value determining module is used for determining a real-time deviation value between the real-time liquid level brightness value and a target liquid level brightness value, wherein the target liquid level brightness value is a liquid level brightness value when seeding operation is executed;
the seed crystal preheating module is used for adjusting the position of the seed crystal to descend to a preheating position corresponding to the preheating deviation value under the condition that the real-time deviation value is smaller than the preheating deviation value;
and the seed crystal welding module is used for welding the seed crystal under the condition that the real-time deviation value is smaller than the welding deviation value, and the welding deviation value is smaller than the preheating deviation value.
7. The apparatus of claim 6, further comprising:
the diameter detection module is used for detecting the welding diameter of the seed crystal after welding;
the seed crystal welding module is further used for adjusting a welding position to weld again under the condition that the welding diameter is smaller than a first preset welding diameter until the welding diameter is larger than or equal to the first preset welding diameter and smaller than or equal to a second preset welding diameter, and the second preset welding diameter is larger than the first preset welding diameter;
and the welding alarm module is used for alarming the welded seed crystal under the condition that the welding diameter is larger than the second preset welding diameter.
8. The apparatus of claim 6, further comprising:
the preheating starting module is used for responding to the first input, preheating the seed crystal and descending the position of the seed crystal to a first preheating position;
a seed crystal preheating module comprising:
the first seed crystal preheating submodule is used for lowering the position of the seed crystal from the first preheating position to a second preheating position under the condition that the real-time deviation value is smaller than a first preheating deviation value;
the second seed crystal preheating submodule is used for descending the position of the seed crystal from the second preheating position to a third preheating position under the condition that the real-time deviation value is smaller than a second preheating deviation value;
the third seed crystal preheating submodule is used for lowering the position of the seed crystal from the third preheating position to a fourth preheating position under the condition that the real-time deviation value is smaller than a third preheating deviation value;
the fourth seed crystal preheating submodule is used for lowering the position of the seed crystal from the fourth preheating position to a fifth preheating position under the condition that the real-time deviation value is smaller than a fourth preheating deviation value;
the sizes of the first preheating deviation value, the second preheating deviation value, the third preheating deviation value and the fourth preheating deviation value are reduced in sequence.
9. An apparatus, characterized in that the apparatus comprises: an interface, a bus, a memory and a processor, the interface, the memory and the processor being connected by the bus, the memory being used for storing an executable program, the processor being configured to execute the executable program to implement the steps of the single crystal welding method according to any one of claims 1 to 5.
10. A computer storage medium, characterized in that the computer readable storage medium has stored thereon an executable program which is run by a processor for implementing the steps of the single crystal welding method according to any one of claims 1 to 5.
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| CN116219535A (en) * | 2023-05-08 | 2023-06-06 | 苏州晨晖智能设备有限公司 | Crystal growth method |
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