CN113395837B - Wet laser forming method for nano metal circuit and structure - Google Patents
Wet laser forming method for nano metal circuit and structure Download PDFInfo
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- CN113395837B CN113395837B CN202110625035.4A CN202110625035A CN113395837B CN 113395837 B CN113395837 B CN 113395837B CN 202110625035 A CN202110625035 A CN 202110625035A CN 113395837 B CN113395837 B CN 113395837B
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/107—Using laser light
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/17—Post-manufacturing processes
- H05K2203/173—Adding connections between adjacent pads or conductors, e.g. for modifying or repairing
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- Manufacturing Of Printed Wiring (AREA)
Abstract
The invention relates to the technical field of integrated circuits, in particular to a wet laser forming method of a nano metal circuit and a nano metal structure, which comprises the following steps: s1, presetting a circuit on a carrier plate to form a carrier plate to be formed with the circuit, and then coating a nano metal paste in a wet state on the surface of the carrier plate to be formed with the circuit; s2, modifying the surface of the nano metal paste on the circuit to-be-formed carrier plate to form a pre-sintering neck; irradiating the surface of the nano metal paste on the circuit to-be-formed carrier plate for at least one time by adopting laser to complete circuit sintering to obtain a circuit forming carrier plate; s3, cleaning the line forming carrier plate; and S4, carrying out surface treatment on the cleaned circuit forming carrier plate to obtain the circuit carrier plate. The invention can control the appearance of the circuit, optimize the quality of the circuit and improve the forming efficiency of the circuit.
Description
Technical Field
The invention relates to the technical field of integrated circuits, in particular to a wet laser forming method of a nano metal circuit and a structure.
Background
With the development of electronic and electric products towards ultra-large scale integration, digitization and batch, the traditional printed circuit manufacturing process method comprises a chemical method and a template (or silk screen) skip printing method, and large errors are easily caused to high-density and high-precision printed circuit boards due to multiple manufacturing procedures in the process of printing the circuit boards; the minimum line width and the line spacing are greatly limited, the line is broken frequently in the corrosion process, and particularly, the high-density multilayer printed board adopted in a large-scale motor computer is easy to corrode and break at a certain position due to high wiring density and thin printed lines, so that a large amount of precious metal and working hours of the board are wasted.
With the rapid development of the laser printing technology, the application field of the laser printing technology is wider and wider, the purpose of rapidly forming a circuit can be achieved by applying the laser printing technology to coat metal particles on a part to be formed of a broken line and carrying out laser forming, and the method is simple to operate, low in cost and short in time consumption, and is considered to be the most effective method at present.
However, in the current laser forming process of metal circuits, the line width and the surface quality of the circuits are difficult to be effectively controlled. The large temperature fluctuations during sintering lead to the problem that the surface of the formed circuit is difficult to keep flat. Furthermore, laser formed lines still lack effective line cleaning means: after the laser forming of the circuit, the residual unsintered nano metal particles will cause the fault of short circuit and the like of the existing circuit. However, the conventional ultrasonic cleaning method can disperse the nano metal particles into the whole circuit, further increasing the risk of faults such as short circuit.
Chinese patent publication No. CN110753454B discloses a forming and repairing method for fine lines, comprising the following steps: step 1, depositing a layer of thin copper layer on a first surface of a light-transmitting plate by a physical vapor deposition method, and then increasing the thickness of the thin copper layer to a required thickness by electroplating; step 2, turning over the light-transmitting plate, and then covering the first surface of the light-transmitting plate on the circuit carrier plate; and 3, adjusting the focal length of the laser transmitter to enable laser emitted by the laser transmitter to be focused on the thin copper layer on the first surface of the light-transmitting plate, irradiating the thin copper layer by the laser through the light-transmitting plate according to a preset track, and cladding the thin copper metal on the track on the circuit carrier plate by the laser. And 4, removing the light-transmitting plate from the circuit carrier plate, cleaning the surface of the circuit carrier plate, and removing residual copper on the unsintered part to complete fine circuit molding.
However, in the above scheme, the copper layer needs to be coated by a physical vapor deposition method, and the thickness needs to be increased by an electroplating method, so that the operation is complicated.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a wet laser forming method of a nano metal circuit and a structure, which can control the appearance of the circuit, optimize the quality of the circuit and improve the forming efficiency of the circuit.
In order to solve the technical problems, the invention adopts the technical scheme that:
a wet laser forming method of nano metal circuit and structure is provided, which comprises the following steps:
s1, presetting a circuit on a carrier plate to form a carrier plate to be formed with the circuit, and then coating nano metal paste in a wet state on the surface of the carrier plate to be formed with the circuit;
s2, modifying the surface of the nano metal paste on the circuit to-be-formed carrier plate to form a pre-sintering neck; irradiating the surface of the nano metal paste on the circuit to-be-formed carrier plate for at least one time by adopting laser to complete circuit sintering to form a circuit forming carrier plate;
s3, cleaning the line forming carrier plate;
and S4, carrying out surface treatment on the cleaned circuit forming carrier plate to obtain the circuit carrier plate.
The invention relates to a wet laser forming method of a nano metal circuit and a structure, which directly coats a nano metal paste in a wet state on a circuit to-be-formed support plate, can shorten the coating time and improve the forming efficiency of the support plate; then, the surface of the nano metal paste on the circuit carrier plate to be formed is modified to form a pre-sintering neck, so that the fluidity of the nano metal paste can be reduced; and sintering the surface of the nano metal paste at high power to obtain the final circuit carrier plate. The invention can control the appearance of the circuit, optimize the quality of the circuit and improve the forming efficiency of the circuit.
Further, in step S2, the modification process includes any one of the following steps:
a. irradiating the circuit to-be-formed support plate by adopting an area flashing light source to volatilize the solvent in the nano metal paste, and preliminarily sintering the nano particles to form a presintering neck;
b. irradiating the circuit to-be-formed support plate by adopting laser to volatilize a solvent in the nano metal paste, and primarily sintering nano particles to form a pre-sintering neck;
c. and (3) heating the circuit to-be-formed support plate wholly or locally by adopting a pre-drying device to volatilize the solvent in the nano metal paste, and primarily sintering the nano particles to form a pre-sintering neck.
Further, before modification treatment, macromolecular long-chain organic matters are added into the nano metal paste to form a nano metal organic mixture.
Further, the macromolecular long-chain organic matter comprises any one or more of epoxy resin, hydroxyl resin and ethyl acrylate.
Further, the content of the macromolecular long-chain organic matter in the nano metal organic mixture is 0.01-10% by mass, and the content of the nano metal paste is 90-99.99%.
Further, the step b comprises any one of the following steps:
b1. irradiating the circuit to-be-formed support plate by adopting single laser;
b2. irradiating the circuit to-be-formed support plate by adopting a plurality of laser beams; setting a main laser to irradiate the circuit on the circuit carrier plate to be formed; and then arranging at least two auxiliary lasers on two sides of the main laser, wherein the auxiliary lasers irradiate areas on two sides of the circuit on the carrier plate to be formed on the circuit, so that the solvent in the nano metal paste is volatilized, and the nano particles are primarily sintered to form a pre-sintering neck.
Further, in step b1, the single laser is any one of the following:
laser with light spot size 1-10 times of line width and pulse over 20 ns; or a continuous laser.
Further, when the modification treatment is performed in step S2, the temperature of the nano metal paste does not exceed 300 ℃.
Further, in step S1, after the coating of the nano metal paste is completed, a glass plate is added on the circuit to-be-formed support plate, and a groove structure having the same shape as the circuit is formed on the glass plate.
Further, in step S4, the surface treatment specifically includes: and spraying organic solution on the surface of the cleaned circuit forming carrier plate to form an anti-oxidation layer on the surface, and then obtaining the circuit carrier plate.
Compared with the prior art, the invention has the beneficial effects that:
the invention relates to a wet laser forming method of a nano metal circuit and a structure, which directly coats a nano metal paste in a wet state on a circuit to-be-formed support plate, can shorten the coating time and improve the forming efficiency of the support plate; then, the surface of the nano metal paste on the circuit carrier plate to be formed is modified to form a pre-sintering neck, so that the flowability of the nano metal paste can be reduced; and sintering the surface of the nano metal paste at high power to obtain the final circuit carrier plate. The invention can control the appearance of the circuit, optimize the quality of the circuit and improve the forming efficiency of the circuit.
Drawings
Fig. 1 is a flow chart of a wet laser forming method of a nano metal line and structure according to the present invention.
Fig. 2 is a schematic structural diagram of the step S2 according to the present invention.
Fig. 3 is a schematic structural diagram after the step S2 is completed.
Fig. 4 is a schematic structural diagram after step S3 is completed.
Fig. 5 is a schematic structural diagram of the case where multiple lasers are used in embodiment 2 of the present invention.
Fig. 6 is a schematic structural diagram of the case where multiple lasers are used in embodiment 3 of the present invention.
Fig. 7 is a schematic structural diagram of a laser in embodiment 4 of the present invention when the laser has a coarse spot and a long pulse.
Fig. 8 is a schematic view of a laser scanning direction in embodiment 4 of the present invention.
Fig. 9 is a schematic structural diagram of embodiment 5 of the present invention.
Fig. 10 is a schematic structural diagram of embodiment 8 of the present invention.
The graphic symbols are illustrated as follows:
1-nano metal paste, 2-circuit to-be-formed carrier plate, 3-laser, 4-sintered circuit and 5-glass plate.
Detailed Description
The present invention will be further described with reference to the following embodiments. Wherein the showings are for the purpose of illustration only and not for the purpose of limiting the same, the same is shown by way of illustration only and not in the form of limitation; to better illustrate the embodiments of the present invention, some parts of the drawings may be omitted, enlarged or reduced, and do not represent the size of an actual product; it will be understood by those skilled in the art that certain well-known structures in the drawings and descriptions thereof may be omitted.
The same or similar reference numerals in the drawings of the embodiments of the present invention correspond to the same or similar components; in the description of the present invention, it should be understood that if there is an orientation or positional relationship indicated by the terms "upper", "lower", "left", "right", etc. based on the orientation or positional relationship shown in the drawings, it is only for convenience of describing the present invention and simplifying the description, but it is not intended to indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and therefore, the terms describing the positional relationship in the drawings are only used for illustrative purposes and are not to be construed as limiting the present patent, and the specific meaning of the terms may be understood by those skilled in the art according to specific circumstances.
Example 1
Fig. 1 to 4 show a first embodiment of a wet laser forming method for nano metal lines and structures according to the present invention, which includes the following steps:
s1, a circuit is preset on a carrier plate to form a carrier plate 2 to be formed, and then nano metal paste 1 in a wet state is coated on the surface of the carrier plate 2 to be formed. Specifically, the coating thickness of the nano metal paste 1 is 1-200 μm, and the nano metal paste 1 is a nano copper paste.
S2, after the step S1, carrying out modification treatment on the surface of the nano metal paste 1 on the circuit to-be-formed carrier plate 2 to form a pre-sintering neck;
wherein the modification treatment is specifically as the following step a: and irradiating the range of the area near the circuit on the circuit-to-be-formed carrier plate 2 by adopting an area flash lamp light source to volatilize the solvent in the nano metal paste 1, and primarily sintering the nano particles to form a presintering neck. It should be noted that the range of the vicinity area of the circuit refers to a range of 1 to 10 times the width of the circuit preset on the carrier board. In addition, the temperature of the nano metal paste 1 is maintained at not more than 300 ℃ during the modification treatment.
After the presintering neck is formed, irradiating the surface of the nano metal paste 1 on the circuit to-be-formed carrier plate 2 for at least one time by using a laser 3 to complete circuit sintering so as to obtain a sintered circuit 4 and obtain a circuit forming carrier plate; wherein, the laser emitted by the laser 3 is adjusted to be a fine light spot and a short pulse laser; specifically, the fine light spot and short pulse laser refers to laser with the light spot size being 0.5-1 time of the width of a preset line on the carrier plate and the single pulse time being 1-100 ns.
And S3, cleaning the line forming carrier plate to remove residual metal particles.
S4, carrying out surface treatment on the cleaned line forming carrier plate to obtain a circuit carrier plate; wherein the surface treatment specifically comprises: and spraying organic solution on the surface of the cleaned circuit forming carrier plate to form an anti-oxidation layer on the surface, and then obtaining the circuit carrier plate. Specifically, the organic solution is any one of imidazole, PVP, PEG, and CTAB.
Example 2
This embodiment is similar to embodiment 1, except that the following steps are included:
s1, a circuit is preset on a carrier plate to form a carrier plate 2 to be formed, and then a nano metal paste 1 in a wet state is coated on the surface of the carrier plate 2 to be formed.
S2, modifying the surface of the nano metal paste 1 on the circuit carrier plate to be formed to form a pre-sintering neck; meanwhile, the surface of the nano metal paste 1 on the circuit to-be-formed carrier plate 2 is irradiated at least once by laser to complete circuit sintering, and then the circuit forming carrier plate is obtained.
Specifically, the laser used for the modification treatment and the line sintering may be irradiated with the same laser 3, and a laser beam splitter or a laser diffractor may be provided in the laser 3 so that the laser 3 can emit the main laser for the line sintering and the sub-laser for the modification treatment; the sub laser beam is positioned in front of the main laser beam, and front refers to a front direction along the laser scanning direction, as shown in fig. 5.
And S3, cleaning the line forming carrier plate to remove residual metal particles.
And S4, carrying out surface treatment on the cleaned circuit forming carrier plate to obtain the circuit carrier plate.
Example 3
This embodiment is similar to embodiment 2 except that, in the modification treatment and the line sintering in step S2, a coarse spot and a long pulse laser are set to perform the modification treatment in the front, and a fine spot and a short pulse laser are set to perform the line sintering in the rear, as shown in fig. 6. The thick light spot and the long pulse laser refer to lasers with the light spot size being 1-10 times of the width of a preset line on the carrier plate and the pulse being more than 20 ns; the laser with the fine light spots and the short pulses refers to the laser with the light spot size being 0.5-1 time of the width of a preset line on the carrier plate and the single pulse time being 1-100 ns.
Example 4
This example is similar to example 1, except that in step S2, the modification treatment is specifically performed as step b: and irradiating the carrier plate to be formed on the circuit by adopting laser to volatilize the solvent in the nano metal paste, and primarily sintering the nano particles to form a pre-sintering neck. In this embodiment, step b1 is executed: the carrier plate to be formed is irradiated with a single laser beam line to form a pre-sintering neck, as shown in fig. 7 and 8.
Specifically, the single laser may be: coarse spot, long pulse laser; wherein, the thick light spot and the long pulse laser refer to lasers with light spot size 1-10 times of the width of the preset circuit on the carrier plate and pulse size more than 20 ns.
In particular, the single laser may also be a continuous laser.
The laser device comprises a carrier plate, a laser light spot and a laser light spot, wherein the laser light spot of a single laser is any one of circular, oval and rectangular, the long axis of the laser light spot is perpendicular to the direction of a line, and the length of the long axis of the laser light spot is 1-10 times of the width of a preset line on the carrier plate. When laser irradiation scanning is used, the scanning method is to perform a plurality of superimposed scans in parallel or perpendicular to the line direction.
Example 5
In this embodiment, similar to embodiment 4, in step S2, the modification process is specifically as in step b: and irradiating the circuit to be formed with laser to volatilize the solvent in the nano metal paste, and preliminarily sintering the nano particles to form a presintering neck. The difference is that the embodiment performs step b2:
adopting a plurality of laser irradiation lines to irradiate the carrier plate 2 to be formed; wherein, a main laser is arranged to irradiate the circuit on the circuit carrier plate to be formed; then at least two secondary lasers are arranged at the two sides in front of the main laser, the secondary lasers irradiate the area range near the circuit on the carrier plate to be formed on the circuit, so that the solvent in the nano metal paste 1 is volatilized, and the nano particles are primarily sintered to form a pre-sintering neck; as shown in fig. 9.
The range of the nearby area refers to that the maximum distance of the laser center of the secondary laser is 1-10 times of the width of the preset line on the carrier plate, and the size of the laser spot is 1-10 times of the width of the preset line on the carrier plate.
Example 6
This example is similar to example 1, except that in step S2, the modification treatment is specifically performed as step c: and (3) heating the circuit to-be-formed carrier plate 2 wholly or locally by adopting a pre-drying device to volatilize the solvent in the nano metal paste, and preliminarily sintering the nano particles to form a pre-sintering neck. Specifically, the pre-drying device is any one of an infrared heating device, a directional radiation heating device, a directional high-temperature inert heating device and a reducing gas blowing heating device.
Example 7
This example is similar to examples 1 to 6, except that a nanometal organic mixture was formed by adding a macromolecular long-chain organic compound to the nanometal paste 1 before the modification treatment. Wherein, the macromolecular long-chain organic matter comprises any one or more of epoxy resin, hydroxyl resin and ethyl acrylate. Specifically, the content of the macromolecular long-chain organic matter in the nano metal organic mixture is 0.01-10% by mass, and the content of the nano metal paste is 90-99.99%. Therefore, when modification treatment is carried out, the solvent in the nano metal paste is volatilized through light source irradiation, the nano metal organic mixture is heated and shrunk, and the nano particles are primarily sintered to form a pre-sintering neck.
Example 8
This embodiment is similar to embodiments 1 to 7, except that in step S1, after the coating of the nano metal paste 1 is completed, a glass plate 5 is added on the circuit board to be formed; wherein, the glass plate 5 is provided with a groove structure with a shape similar to that of the circuit; as shown in fig. 10. Specifically, the similarity between the groove structure and the circuit shape means that the width of the groove structure is 1 to 10 times of the width of the preset circuit on the carrier plate, and the thickness of the groove structure is the same as the thickness of the circuit. After the glass plate 5 is covered, the groove structure can distinguish the nano metal paste 1 at the line position from the nano metal paste 1 at other positions, and the nano metal paste 1 is prevented from flowing directionally in the line sintering process.
It should be understood that the above-described embodiments of the present invention are merely examples for clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. This need not be, nor should it be exhaustive of all embodiments. Any modification, equivalent replacement, and improvement made within the spirit and principle of the present invention should be included in the protection scope of the claims of the present invention.
Claims (8)
1. A wet laser forming method for nano metal lines and structures is characterized by comprising the following steps:
s1, presetting a circuit on a carrier plate to form a carrier plate to be formed with the circuit, and then coating a nano metal paste in a wet state on the surface of the carrier plate to be formed with the circuit; after the coating of the nano metal paste is finished, covering a glass plate on the circuit to-be-formed support plate, wherein the glass plate is provided with a groove structure similar to the circuit in shape; after the glass plate is covered, the groove structure can distinguish the nano metal paste at the position of the circuit from the nano metal paste at other positions, so that the nano metal paste is prevented from flowing directionally in the process of sintering the circuit;
s2, modifying the surface of the nano metal paste on the circuit to-be-formed carrier plate to form a pre-sintering neck; irradiating the surface of the nano metal paste on the circuit to-be-formed carrier plate for at least one time by adopting laser to complete circuit sintering to obtain a circuit forming carrier plate; wherein the modification treatment comprises any one of the following steps:
a. irradiating the circuit to-be-formed support plate by adopting an area flashing light source to volatilize the solvent in the nano metal paste, and preliminarily sintering the nano particles to form a presintering neck;
b. irradiating the circuit to-be-formed support plate by adopting laser to volatilize a solvent in the nano metal paste, and preliminarily sintering nano particles to form a presintering neck;
c. a pre-drying device is adopted to heat the carrier plate to be formed of the circuit wholly or locally, so that the solvent in the nano metal paste is volatilized, and nano particles are primarily sintered to form a pre-sintering neck;
s3, cleaning the circuit forming support plate;
and S4, carrying out surface treatment on the cleaned circuit forming carrier plate to obtain the circuit carrier plate.
2. The wet laser forming method of nano-metal lines and structures as claimed in claim 1, wherein before modification, macromolecular long-chain organics are added to the nano-metal paste to form a nano-metal-organic mixture.
3. The wet laser forming method of nano metal lines and structures as claimed in claim 2, wherein the macromolecular long-chain organic substance comprises any one or more of epoxy resin, hydroxyl resin and ethyl acrylate.
4. The wet laser forming method for the nano metal circuit and the nano metal structure as claimed in claim 2, wherein the nano metal organic mixture comprises, by mass, 0.01 to 10% of the macromolecular long-chain organic substance, and 90 to 99.99% of the nano metal paste.
5. The method of claim 1, wherein step b comprises any of the following steps:
b1. irradiating the circuit to-be-formed support plate by adopting single laser;
b2. irradiating the circuit to-be-formed support plate by adopting a plurality of laser beams; setting a main laser to irradiate the circuit on the circuit support plate to be formed; and then at least two auxiliary lasers are arranged on two sides of the main laser, and the auxiliary lasers irradiate areas on two sides of the circuit on the carrier plate to be formed on the circuit, so that the solvent in the nano metal paste is volatilized, and the nano particles are primarily sintered to form a pre-sintering neck.
6. The wet laser forming method for nano metal lines and structures as claimed in claim 5, wherein in step b1, the single laser is any one of the following:
laser with the spot size of 1 to 10 times of the line width and the pulse of more than 20 ns;
and (4) continuous laser.
7. The wet laser forming method of nanometal lines and structures according to claim 1, characterized in that the temperature of the nanometal paste does not exceed 300 ℃ when the modification treatment is performed in step S2.
8. The wet laser forming method of nano-metal lines and structures as claimed in claim 1, wherein in step S4, the surface treatment specifically comprises: and spraying organic solution on the surface of the cleaned circuit forming carrier plate to form an anti-oxidation layer on the surface, and then obtaining the circuit carrier plate.
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| US20050274772A1 (en) * | 2004-06-14 | 2005-12-15 | Nelson Curtis L | Treating an area to increase affinity for a fluid |
| JP2006038999A (en) * | 2004-07-23 | 2006-02-09 | Sumitomo Electric Ind Ltd | Method for forming conductive circuit by using laser irradiation, and conductive circuit |
| JP5108628B2 (en) * | 2008-05-23 | 2012-12-26 | 克廣 前川 | Method for forming highly adhesive metal nanoparticle sintered film |
| JP2014185358A (en) * | 2013-03-22 | 2014-10-02 | M&M Research Inst | Method and apparatus for forming sintered body film using laser |
| DE102013104577B3 (en) * | 2013-05-03 | 2014-07-24 | Heraeus Noblelight Gmbh | Apparatus for drying and sintering metal-containing ink on a substrate |
| US20150189761A1 (en) * | 2013-12-20 | 2015-07-02 | Intrinsiq Materials, Inc. | Method for depositing and curing nanoparticle-based ink |
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|---|---|---|---|---|
| US20050176242A1 (en) * | 2002-07-26 | 2005-08-11 | Seiko Epson Corporation | Patterning method |
| US20070018362A1 (en) * | 2003-12-05 | 2007-01-25 | Babak Heidari | Device and method for large area lithography |
| US20050260790A1 (en) * | 2004-05-24 | 2005-11-24 | Goodner Michael D | Substrate imprinting techniques |
| US20080261026A1 (en) * | 2006-10-03 | 2008-10-23 | Seiko Epson Corporation | Element substrate and method of manufacturing the same |
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