CN113394352B - Light-emitting device, manufacturing method thereof and display device - Google Patents
Light-emitting device, manufacturing method thereof and display device Download PDFInfo
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- CN113394352B CN113394352B CN202110656414.XA CN202110656414A CN113394352B CN 113394352 B CN113394352 B CN 113394352B CN 202110656414 A CN202110656414 A CN 202110656414A CN 113394352 B CN113394352 B CN 113394352B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000010410 layer Substances 0.000 claims abstract description 68
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 239000002131 composite material Substances 0.000 claims abstract description 45
- 238000002834 transmittance Methods 0.000 claims abstract description 41
- 239000002346 layers by function Substances 0.000 claims abstract description 22
- 230000005611 electricity Effects 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910021389 graphene Inorganic materials 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910021542 Vanadium(IV) oxide Inorganic materials 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- GRUMUEUJTSXQOI-UHFFFAOYSA-N vanadium dioxide Chemical compound O=[V]=O GRUMUEUJTSXQOI-UHFFFAOYSA-N 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 5
- 150000001875 compounds Chemical class 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- 238000002310 reflectometry Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses a light-emitting device, a manufacturing method thereof and a display device, wherein the light-emitting device comprises: the substrate, be equipped with functional layer and negative pole in proper order in the direction of substrate and keeping away from the substrate, the functional layer includes the luminescent layer, is equipped with the adjustable compound positive pole of transparent state between substrate and the functional layer, and compound positive pole is changeable between high transparent state and low transparent state. The manufacturing method comprises the following steps: providing a substrate; sequentially stacking a composite anode, a functional layer and a cathode on one side of the substrate in a direction away from the substrate, wherein the functional layer comprises a light-emitting layer; wherein the transparent state of the composite anode is switchable between a high transmittance and a low transmittance. The display device comprises the light emitting device. The light-emitting device provided by the invention can realize the switching of the composite anode between high transmittance and low transmittance through electric control adjustment, and the composite anode can be in a low transmittance state and can be reflected highly when being electrified, so that the light-emitting device has a good display effect; the composite anode is in a high-transmittance state when not connected with electricity, so that requirements of under-screen camera shooting and the like can be met.
Description
Technical Field
The invention relates to the technical field of display, in particular to a light-emitting device, a manufacturing method thereof and a display device.
Background
In recent years, organic light emitting diode (Organic Light Emitting Diode, abbreviated as OLED) devices are becoming the main stream of development in the display industry due to their self-luminescence, wide viewing angle, high contrast ratio, low power consumption, etc., and top-emitting OLEDs are becoming the main development point due to their large aperture ratio.
Currently, in the top-emitting OLED, the light emitting device is usually non-transparent, and the anode thereof has extremely high reflectivity, so that the top-emitting OLED has high light extraction efficiency, and if the anode transmittance is too high, the light extraction efficiency is affected, and the display quality is reduced.
However, in some cases, the light emitting area needs to be transparent, such as transparent television, under-screen camera shooting, etc., while the current transparent display technology is generally optimized for the non-pixel area, so that the non-pixel area is transparent through a specific design, and meanwhile, the duty ratio of the pixel area is reduced, so that the overall transmittance of the display screen is improved, but the reduction of the duty ratio of the pixel area can obviously influence the display quality, and if the transparent optimization is performed for the pixel area, the display quality can also be obviously influenced.
Disclosure of Invention
In view of the foregoing drawbacks or shortcomings in the prior art, it is desirable to provide a light emitting device, a method of manufacturing the same, and a display apparatus.
In a first aspect, the present invention provides a light emitting device comprising: the light-emitting diode comprises a substrate, wherein a functional layer and a cathode are sequentially laminated on one side of the substrate and far away from the substrate, the functional layer comprises a light-emitting layer, a composite anode with an adjustable transparent state is arranged between the substrate and the functional layer, and the composite anode can be switched between a high-transmittance state and a low-transmittance state.
Preferably, from the base plate to the direction of functional layer, the compound positive pole is including the artifical electromagnetic structure layer, intermediate medium layer and the transparent conducting layer of lamination setting in proper order, the automatically controlled adjustable of artifical electromagnetic structure layer.
Further, the artificial electromagnetic structure layer comprises a plurality of artificial electromagnetic micro units distributed in an array, and the artificial electromagnetic micro units are in a central symmetry structure;
the artificial electromagnetic micro-units comprise an electric control component and an even number of micro-circuits connected with the electric control component, and adjacent artificial electromagnetic micro-units are connected through the micro-circuits.
Further, the electric control component is in a positive cross shape and is provided with four end parts which are symmetrical about a center, and each end part is connected with one microcircuit.
Further, each of the end portions has a T-shaped structure in a cross section parallel to the base plate.
Further, the material of the electric control component comprises any one of the following materials: graphene, photosensitive silicon and vanadium dioxide.
Further, the intermediate dielectric layer is a high refractive transparent layer.
In a second aspect, the present invention provides a method for manufacturing a light emitting device, including:
providing a substrate;
sequentially stacking a composite anode, a functional layer and a cathode on one side of a substrate in a direction away from the substrate, wherein the functional layer comprises a light-emitting layer; wherein,,
the transparent state of the composite anode is switchable between high and low transmittance.
Preferably, forming the composite anode on one side of the substrate includes:
etching one side of the substrate to form an electrically-controlled adjustable artificial electromagnetic structure layer;
coating one side of the artificial electromagnetic structure layer far away from the substrate to form an intermediate medium layer;
and evaporating and forming a transparent conductive layer on one side of the intermediate dielectric layer far away from the substrate.
In a third aspect, the present invention provides a display apparatus comprising a light emitting device as described above.
The technical scheme provided by the embodiment of the invention can comprise the following beneficial effects:
the light-emitting device provided by the embodiment of the invention is provided with the composite anode, the switching between high transmittance and low transmittance of the composite anode can be realized through electric control adjustment, and the composite anode can be in a low transmittance state and can be reflected highly when being electrified, so that the display device has good display effect; the composite anode is in a high-transmittance state when not connected with electricity, so that requirements of under-screen camera shooting and the like can be met.
Drawings
Other features, objects and advantages of the present invention will become more apparent upon reading of the detailed description of non-limiting embodiments, made with reference to the accompanying drawings in which:
fig. 1 is a schematic structural diagram of a light emitting device according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a composite anode according to an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of an artificial electromagnetic structure layer according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of an artificial electromagnetic micro unit according to an embodiment of the present invention.
Detailed Description
The invention is described in further detail below with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be noted that, for convenience of description, only the portions related to the invention are shown in the drawings.
It should be noted that, without conflict, the embodiments of the present invention and features of the embodiments may be combined with each other. The invention will be described in detail below with reference to the drawings in connection with embodiments.
Fig. 1 is a schematic structural diagram of a light emitting device according to an embodiment of the present invention.
As shown in fig. 1, the light emitting device includes: a substrate 1, wherein a composite anode 2, a functional layer and a cathode 6 are sequentially laminated on one side of the substrate 1 in a direction away from the substrate 1, the functional layer comprises a hole transport layer 3, a light emitting layer 4 and an electron transport layer 5 which are sequentially laminated in a direction from the substrate 1 to the substrate 1, and the transparent state of the composite anode 2 is switchable between a high-transmittance state and a low-transmittance state; an encapsulation layer 7 is further arranged on one side of the cathode 6 away from the substrate 1, and the encapsulation layer 7 encapsulates the composite anode 2, the functional layer and the cathode 6 which are positioned on the substrate 1. Fig. 1 is merely a schematic view of a light emitting device and is not equivalent to the actual configuration of the light emitting device.
The light-emitting device provided by the embodiment is a top-emitting OLED, the composite anode is of a composite film structure, and the composite anode has extremely high reflectivity in a low-transmittance state, so that a light-emitting area of a display device with the light-emitting device has a normal display effect; the composite anode makes the light-emitting area of the display device with the light-emitting device transparent in a high-transmittance state, and for example, technologies such as under-screen shooting and the like can be implemented.
In the embodiment, the optical characteristics of the composite anode are controlled by the applied voltage, and the composite anode can be switched between a high-transmittance state and a low-transmittance state so as to meet the requirements of different use occasions, wherein the transmittance of the composite anode in the high-transmittance state is higher than 90%, and the transmittance in the low-transmittance state is lower than 10%.
Fig. 2 is a schematic structural diagram of a composite anode according to an embodiment of the present invention.
As an alternative embodiment, as shown in fig. 2, from the direction from the substrate 1 to the functional layer, the composite anode 2 includes an artificial electromagnetic structure layer 21, an intermediate dielectric layer 22 and a transparent conductive layer 23 which are sequentially stacked, wherein the artificial electromagnetic structure layer 21 is electrically controlled and adjustable, and the intermediate dielectric layer 22 serves as an air gap resonant cavity. The light-emitting device is in the low-transmittance state when the artificial electromagnetic structure layer 21 is powered on, so that the composite anode has high reflectivity, a corresponding display device has good display effect, and meanwhile, the reflection spectrum of the composite anode has frequency selection characteristics, is different in light reflectivity of different wavelengths, and can effectively optimize the emergent spectrum; the composite anode is in the high-transmittance state when the artificial electromagnetic structure layer 21 is not connected with electricity, so that the light-emitting device is in a transparent state, and the corresponding display device is in a transparent state, so that requirements of under-screen shooting and the like can be met.
Further, as shown in fig. 3 and fig. 4, the artificial electromagnetic structure layer 21 includes a plurality of artificial electromagnetic micro units 211 distributed in an array, and the artificial electromagnetic micro units 211 have a central symmetry structure; artificial electromagnetic microcells 211 include an electrical control component 2111 and an even number of microcircuits 2112 connected to electrical control component 2111, adjacent artificial electromagnetic microcells 211 being connected by microcircuits 2112.
In the embodiment, the microcircuit is a miniature control circuit, the artificial electromagnetic microcircuit comprises an even number of microcircuits, the optical characteristics of the composite anode 2 can be switched between high transmittance and low transmittance through electric control adjustment, particularly when an electric control component is not connected with electricity, the transmittance of the composite anode is higher, the reflectivity and the absorptivity are lower, and the light-emitting device is in a transparent state; when the electric control component is connected with electricity, the transmittance and the absorptivity of the composite anode are lower, the reflectivity is higher, and the light-emitting device is in a non-transparent state. The artificial electromagnetic micro-unit 211 can generate a surface plasmon polariton (Surface Plasmon Polarit, SPP for short) mode under the excitation of near-field light with a specific wavelength, and SPP oscillation can generate magnetic mode resonance with the transparent conductive layer, so that the optical response of the composite anode is changed, the composite anode is in a reflection state, and the optical characteristics of the light-emitting device can be changed from high transmittance to high reflectance.
Further, referring to fig. 4, the electronic control part 2111 has a positive cross shape having four ends symmetrical about a center, each end being connected to one micro circuit 2112.
Fig. 4 illustrates one shape of artificial electromagnetic micro-cells 211, and the shape of artificial electromagnetic micro-cells 211 may also be other, such as an electronically controlled component in a circular or square shape, with each artificial electromagnetic micro-cell 211 including micro-circuits 2112 distributed in a lateral direction and in a vertical direction.
Referring to fig. 3, the artificial electromagnetic structure layer 21 includes 132 periods of artificial electromagnetic microcells 211; adjacent artificial electromagnetic micro units are connected through micro circuits distributed transversely along the transverse direction; along the vertical direction, adjacent artificial electromagnetic micro units are connected through vertically distributed microcircuits.
Further, each end is T-shaped in cross section parallel to the substrate, so that more charge can be accumulated to form dipole mode resonance.
Further, the material of the electronic control part 2111 includes any one of the following: graphene, photosensitive silicon and vanadium dioxide are selected, and graphene is selected in the embodiment, so that the graphene-based solar cell is high in transmittance and good in electric control characteristic. The materials for the electric control part 2111 include, but are not limited to, the foregoing examples, but the materials whose conductivity can be changed by applying a voltage can be used.
Referring to fig. 3, the artificial electromagnetic micro-unit 211 is square, the size of the artificial electromagnetic micro-unit is 200nm-400nm, the left and right length and the up and down width of the electric control component 2111 are the same, the design is 120nm-300nm, the structural parameters of the artificial electromagnetic micro-unit can be adjusted according to the wavelength of the applied light, and the light emitting device is applied to a display device, so that the development requirement of the light and thin display device is met.
Further, the intermediate dielectric layer 22 is a high refractive transparent layer, and a material that is polyimide may be preferable. The thickness of the intermediate dielectric layer 22 may be set according to the wavelength of incident light, and is generally preferably 20-40nm.
In addition, the thickness of the transparent conductive layer 23 is 15nm, and the material is selected from metallic silver, and other available transparent electrode materials can also be selected.
In a second aspect, an embodiment of the present invention provides a method for manufacturing a light emitting device, including:
providing a substrate;
sequentially stacking a composite anode, a functional layer and a cathode on one side of the substrate in a direction away from the substrate, wherein the functional layer comprises a light-emitting layer; wherein,,
the transparent state of the composite anode is switchable between high and low transmission.
The composite anode replaces a common anode, the composite anode has optical characteristics capable of being switched between high transmittance and low transmittance, the light-emitting device can have normal display effect, and the light-emitting device can be fully transparent.
As an alternative embodiment, forming a composite anode on one side of a substrate includes:
etching one side of the substrate to form an electrically-controlled adjustable artificial electromagnetic structure layer;
coating one side of the artificial electromagnetic structure layer far away from the substrate to form an intermediate medium layer;
and evaporating and forming a transparent conductive layer on one side of the middle dielectric layer, which is far away from the substrate.
In the embodiment, a periodic artificial electromagnetic micro unit can be etched on the surface of the substrate by adopting a laser etching method to form an artificial electromagnetic structure layer; coating one side of the artificial electromagnetic structure layer far away from the substrate by polyimide to form an intermediate medium layer; evaporating and forming a transparent conductive layer on one side of the middle dielectric layer far away from the substrate; and forming a packaging layer, wherein the packaging layer coats the composite anode, the functional layer and the cathode which are positioned on the substrate.
In a third aspect, embodiments of the present invention further provide a display apparatus including the light emitting device as above. In this embodiment, the display device may be a smart phone, a tablet, a smart television, or the like, and these display devices may normally display a picture, or may display transparent or capture images under a screen.
The above description is only illustrative of the preferred embodiments of the present invention and of the principles of the technology employed. It will be appreciated by persons skilled in the art that the scope of the invention referred to in the present invention is not limited to the specific combinations of the technical features described above, but also covers other technical features formed by any combination of the technical features described above or their equivalents without departing from the inventive concept. Such as the above-mentioned features and the technical features disclosed in the present invention (but not limited to) having similar functions are replaced with each other.
Claims (5)
1. A light emitting device, comprising: the light-emitting device comprises a substrate, wherein a functional layer and a cathode are sequentially laminated on one side of the substrate in a direction away from the substrate, and the functional layer comprises a light-emitting layer;
the composite anode comprises an artificial electromagnetic structure layer, an intermediate medium layer and a transparent conductive layer which are sequentially stacked, wherein the artificial electromagnetic structure layer is electrically controlled and adjustable;
when the artificial electromagnetic structure layer is powered on, the light-emitting device is in the low-transmittance state; when the artificial electromagnetic structure layer is not connected with electricity, the light-emitting device is in a high-transmittance state;
the artificial electromagnetic structure layer comprises a plurality of artificial electromagnetic micro units distributed in an array, and the artificial electromagnetic micro units are in a central symmetry structure;
the artificial electromagnetic micro-units comprise an electric control component and an even number of micro-circuits connected with the electric control component, and the adjacent artificial electromagnetic micro-units are connected through the micro-circuits;
the electric control component is in a positive cross shape and is provided with four end parts which are symmetrical about the center, and each end part is connected with one microcircuit;
each of the end portions has a T-shaped structure in a cross section parallel to the base plate.
2. A light emitting device according to claim 1, wherein the material of the electrically controlled member comprises any one of: graphene, photosensitive silicon and vanadium dioxide.
3. The light emitting device of claim 1, wherein the intermediate dielectric layer is a high refractive transparent layer.
4. A method of fabricating a light emitting device, comprising:
providing a substrate;
sequentially stacking a composite anode, a functional layer and a cathode on one side of a substrate in a direction away from the substrate, wherein the functional layer comprises a light-emitting layer; wherein,,
the transparent state of the composite anode can be switched between a high-transmittance state and a low-transmittance state;
wherein forming the composite anode on one side of the substrate comprises:
etching one side of the substrate to form an electrically-controlled adjustable artificial electromagnetic structure layer;
coating one side of the artificial electromagnetic structure layer far away from the substrate to form an intermediate medium layer;
evaporating and forming a transparent conductive layer on one side of the middle dielectric layer far away from the substrate;
when the artificial electromagnetic structure layer is powered on, the light-emitting device is in the low-transmittance state; when the artificial electromagnetic structure layer is not connected with electricity, the light-emitting device is in the high-transmittance state;
the artificial electromagnetic structure layer comprises a plurality of artificial electromagnetic micro units distributed in an array, and the artificial electromagnetic micro units are in a central symmetry structure;
the artificial electromagnetic micro-units comprise an electric control component and an even number of micro-circuits connected with the electric control component, and the adjacent artificial electromagnetic micro-units are connected through the micro-circuits;
the electric control component is in a positive cross shape and is provided with four end parts which are symmetrical about the center, and each end part is connected with one microcircuit;
each of the end portions has a T-shaped structure in a cross section parallel to the base plate.
5. A display apparatus comprising the light-emitting device according to any one of claims 1 to 3.
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| CN202110656414.XA CN113394352B (en) | 2021-06-11 | 2021-06-11 | Light-emitting device, manufacturing method thereof and display device |
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| CN105870351B (en) * | 2016-04-05 | 2018-07-03 | 深圳市华星光电技术有限公司 | OLED display panel and preparation method thereof |
| CN106125442B (en) * | 2016-08-31 | 2019-11-01 | 京东方科技集团股份有限公司 | Double face display panel and double-side display device |
| CN110649074B (en) * | 2019-09-25 | 2021-10-01 | 上海天马有机发光显示技术有限公司 | Display panel and display device |
| CN110767840B (en) * | 2019-10-30 | 2022-04-26 | 京东方科技集团股份有限公司 | Display panel and display device |
| CN110752241B (en) * | 2019-10-31 | 2023-01-10 | 武汉天马微电子有限公司 | Display panel and display device |
| CN111948865A (en) * | 2020-05-27 | 2020-11-17 | 广州星晰材料有限公司 | Preparation method of polyimide-containing electrochromic material and device |
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