CN113394059B - Multi-pole multi-throw switch based on RF MEMS switch - Google Patents
Multi-pole multi-throw switch based on RF MEMS switch Download PDFInfo
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- CN113394059B CN113394059B CN202110502070.7A CN202110502070A CN113394059B CN 113394059 B CN113394059 B CN 113394059B CN 202110502070 A CN202110502070 A CN 202110502070A CN 113394059 B CN113394059 B CN 113394059B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
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Abstract
The invention relates to a multi-pole multi-throw switch based on an RF MEMS switch, comprising: a substrate; two MEMS single-pole multi-throw switches arranged on the substrate and connected in cascade; the MEMS single-pole multi-throw switch comprises a plurality of signal wires, a ground wire, a plurality of upper electrodes, a plurality of driving electrodes, a power divider and a plurality of air bridges. According to the multi-pole multi-throw switch, the two MEMS single-pole multi-throw switches are cascaded, so that the insertion loss of a device can be reduced, the isolation degree of the device is improved, the size of the device is reduced, the working frequency of the device is widened, and the gating function of a multi-channel signal can be realized.
Description
Technical Field
The invention belongs to the technical field of radio frequency MEMS (micro electro mechanical systems), and particularly relates to a multi-pole multi-throw switch based on an RF MEMS switch.
Background
A radio frequency MEMS (Micro-Electro-Mechanical System) switch is a MEMS passive device, and its main working principle is to control the opening and closing of the upper electrode by a driving electrode, so as to control whether a signal is turned on. Compared with the traditional mechanical and electronic (PIN and FET) switches, the RF (Radio Frequency) MEMS switch has the advantages of small volume, light weight, low power consumption, small insertion loss, high isolation, wide Frequency band, good linearity, high integration level and the like, is convenient to integrate with microwave devices, such as a phase shifter, a filter, an antenna and the like, and can realize multiple functions.
The research institutions of the domestic radio frequency MEMS switch comprise units such as the university of Qinghai, the university of northwest industry, the thirteen institute of middle electric group, the fifty-five institute of middle electric group and the like. According to the radio frequency MEMS switch disclosed by the university of Qinghua and the forming method thereof, a cantilever beam is used as an upper electrode, a copper film and graphene are used as switch contacts, and the problem that the switch fails due to high temperature generated by gold contact is effectively solved; the fifteen groups of medium electricity disclose a single-chip integrated multiband control MEMS switch which is composed of three series contact MEMS switches and can realize single-channel signal conduction.
Currently, temporary inorganic structures in China disclose researches on a multi-pole multi-throw switch based on MEMS technology. For the existing MEMS switch research, only single-channel signal conduction can be realized, and the multi-channel signal gating function can not be realized.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a multi-pole multi-throw switch based on an RF MEMS switch. The technical problems to be solved by the invention are realized by the following technical scheme:
the embodiment of the invention provides a multi-pole multi-throw switch based on an RF MEMS switch, which comprises:
a substrate;
two cascaded MEMS single-pole multi-throw switches arranged on the substrate;
the MEMS single-pole multi-throw switch comprises a plurality of signal wires, a ground wire, a plurality of upper electrodes, a plurality of driving electrodes, a power divider and a plurality of air bridges, wherein the signal wires and the driving electrodes are distributed on the surface of a substrate, the ground wire is arranged on the substrate and is arranged on two sides of the signal wires and on the periphery of the driving electrodes, the power divider is arranged on the substrate and comprises a plurality of first branches and second branches, the first branches and the second branches form a star-shaped structure, the first branches are connected with each signal wire, the two MEMS single-pole multi-throw switches are connected through the second branches, the end part of each driving electrode is arranged between each signal wire and each power divider, each upper electrode is arranged on the power divider and is simultaneously positioned above each signal wire and each driving electrode, and the two MEMS single-pole multi-throw switches are connected through the power divider, and each MEMS single-pole multi-throw switch is positioned across the surface of the ground wire.
In one embodiment of the present invention, the number of the plurality of signal lines, the number of the plurality of upper electrodes, and the number of the plurality of driving electrodes are all 4.
In one embodiment of the invention, the signal line adopts a bent structure at a crossing position of the air bridge.
In one embodiment of the invention, the upper electrode comprises an upper electrode cantilever beam, a first anchor point, at least two contacts, and a first array of relief holes, wherein,
the power divider comprises a power divider, a first anchor point, at least two contacts, an upper electrode cantilever beam, a first release hole array and a second release hole array, wherein the first anchor point is arranged on the power divider, the at least two contacts are arranged on the signal line at intervals, the upper electrode cantilever beam is arranged on the first anchor point and is located above the contacts, and the first release hole array is distributed on the upper electrode cantilever beam.
In one embodiment of the present invention, the first release hole array includes a plurality of first release holes distributed in an array, the number of rows of the first release hole array is 1 to 6, the number of columns is 1 to 8, the pitch of the first release holes in each row or column is 4 to 8 μm, and the diameter of each first release hole is 4 to 10 μm.
In one embodiment of the present invention, the driving electrode includes an electrode, a lead-out wire, and a pad, wherein,
the electrode is positioned between the end part of the signal wire and the power divider and below the cantilever beam;
one end of the outgoing line is connected with the electrode, and the other end of the outgoing line is connected with the bonding pad.
In one embodiment of the invention, the electrodes are in a convex configuration with the convex portions of the convex configuration between the contacts.
In one embodiment of the invention, the air bridge comprises a solidly-supported cantilever, a second anchor point, a third anchor point, and a second array of relief holes, wherein,
the second anchor point is arranged on the ground wire and is positioned on one side of the signal wire, the third anchor point is arranged on the ground wire and is positioned on the other side of the signal wire, the fixed cantilever beam is arranged on the second anchor point and the third anchor point so as to span the signal wire, and the second release hole arrays are distributed on the fixed cantilever beam.
In one embodiment of the present invention, the second release hole array includes a plurality of second release holes distributed in an array, the number of rows of the second release hole array is 1-6, the number of columns is 1-12, the pitch of the second release holes in each row or column is 6-10 μm, and the diameter of each second release hole is 6-10 μm.
Compared with the prior art, the invention has the beneficial effects that:
according to the multi-pole multi-throw switch, the two MEMS single-pole multi-throw switches are cascaded, so that the insertion loss of a device can be reduced, the isolation degree of the device is improved, the size of the device is reduced, the working frequency of the device is widened, and the gating function of a multi-channel signal can be realized.
Drawings
Fig. 1 is a schematic diagram of the overall structure of a multi-pole multi-throw switch based on an RF MEMS switch according to an embodiment of the present invention;
FIG. 2 is a top view of the overall structure of a multi-pole, multi-throw switch based on an RF MEMS switch according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a switch structure in a multi-pole multi-throw switch based on an RF MEMS switch according to an embodiment of the present invention;
FIG. 4 is a top view of a switch structure in a multi-pole, multi-throw switch based on an RF MEMS switch according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a structure of an upper electrode cantilever in a multi-pole, multi-throw switch based on an RF MEMS switch according to an embodiment of the present invention;
fig. 6 is a schematic structural diagram of a driving electrode according to an embodiment of the present invention;
fig. 7 is a schematic structural diagram of a power divider according to an embodiment of the present invention;
FIG. 8 is a schematic diagram of an air bridge in a multi-pole, multi-throw switch based on an RF MEMS switch according to an embodiment of the present invention;
FIG. 9 is a top view of an air bridge in a multi-pole, multi-throw switch based on an RF MEMS switch according to an embodiment of the present invention;
FIG. 10 is a schematic diagram of a four pole, four throw switch based on an RF MEMS switch according to an embodiment of the present invention;
FIG. 11 is a diagram of simulation results of insertion loss of a four-pole four-throw switch based on an RF MEMS switch according to an embodiment of the present invention;
FIG. 12 is a graph of simulation results of isolation of a four-pole, four-throw switch based on an RF MEMS switch according to an embodiment of the present invention;
fig. 13 is a standing wave ratio simulation result diagram of a four-pole four-throw switch based on an RF MEMS switch according to an embodiment of the present invention.
Description of the embodiments
The present invention will be described in further detail with reference to specific examples, but embodiments of the present invention are not limited thereto.
Examples
Referring to fig. 1 and fig. 2, fig. 1 is a schematic diagram of an overall structure of a multi-pole multi-throw switch based on an RF MEMS switch according to an embodiment of the present invention, and fig. 2 is a top view of an overall structure of a multi-pole multi-throw switch based on an RF MEMS switch according to an embodiment of the present invention. The RF MEMS switch-based multi-pole multi-throw switch comprises a substrate 10 and two MEMS single-pole multi-throw switches 20, wherein the two MEMS single-pole multi-throw switches 20 are arranged on the substrate 10, and the two MEMS single-pole multi-throw switches 20 are cascaded.
Each MEMS single pole multiple throw switch 20 includes a number of signal lines 21, a ground line 22, a number of upper electrodes 23, a number of drive electrodes 24, a power divider 25, and a number of air bridges 26. Wherein, a plurality of signal lines 21 and a plurality of driving electrodes 24 are distributed on the surface of the substrate 10, the number of the signal lines 21 is the same as that of the driving electrodes 24, one signal line 21 corresponds to one driving electrode 24, and each driving electrode 24 drives one signal line 21; the ground wires 22 are arranged on two sides of the signal wires 21, the signal wires 21 are led out from the ground wires 22 to cut off the ground wires 22 on two sides of the signal wires, and meanwhile, the ground wires 22 are arranged on the periphery of the driving electrode 24 to enclose one end of the driving electrode 24, so that the ground wires 22 on two sides of the driving electrode 24 are in a communication state; the power splitters 25 are disposed on the substrate 10 at a distance from the end of each signal line 21, that is, the power splitters 25 are disposed at the end of all the signal lines 21 to be spaced apart from each signal line 21; the end part of each driving electrode 24 is positioned between the end part of each signal line 21 and the power divider 25, and the driving electrodes 24 and the end parts of the signal lines 21 and the power divider 25 are separated by a certain distance, namely, the driving electrodes 24 are not contacted with the signal lines 21 and the power divider 25; the number of the upper electrodes 23 is the same as the number of the signal lines 21 and the number of the driving electrodes 24, each upper electrode 23 corresponds to one signal line 21 and one driving electrode 22, and each upper electrode 23 is arranged on the power divider 25 and is positioned above each signal line 21 and each driving electrode 24 at the same time; the two MEMS single-pole multi-throw switches 20 are connected through a power divider 25; each air bridge 26 is located on the surface of the ground line 22 and spans the signal line 21, so that the air bridges 26 connect the ground lines 22 on both sides of the signal line 21.
Specifically, the substrate 10 serves as a carrier structure for the multiple pole, multiple throw switch, carrying two MEMS single pole, multiple throw switches 20; the substrate 10 is rectangular in shape and its materials include, but are not limited to, ceramics, glass, high resistance silicon, and the like. The materials of the signal line 21, the ground line 22, the upper electrode 23, the driving electrode 24, the power divider 25, and the air bridge 26 include, but are not limited to, gold, aluminum, platinum, and the like.
The number of the signal lines 21, the driving electrodes 24, the upper electrodes 23 is at least two, for example, 2, 3, 4, etc.; in this embodiment, the number of signal lines 21, driving electrodes 24, and upper electrodes 23 is 4. Further, the signal lines 21 are bent at the crossing positions of the air bridges 26 so that the ends of the plurality of signal lines 21 are directed toward the power divider 25.
In one embodiment, the ground lines 22 are equally spaced on both sides of the signal line 21, i.e., the distance between the edge of the ground line 22 and the edge of the signal line 21 is equal.
Referring to fig. 3, fig. 4 and fig. 5, fig. 3 is a schematic diagram of a switch structure in a multi-pole multi-throw switch based on an RF MEMS switch according to an embodiment of the present invention, fig. 4 is a top view of a switch structure in a multi-pole multi-throw switch based on an RF MEMS switch according to an embodiment of the present invention, and fig. 5 is a schematic diagram of a structure of an upper electrode cantilever in a multi-pole multi-throw switch based on an RF MEMS switch according to an embodiment of the present invention.
In the present embodiment, the upper electrode 23 and the driving electrode 24 together form a switching structure.
The upper electrode 23 includes an upper electrode cantilever beam 231, a first anchor 232, at least two contacts 233 and a first release hole array 234, where the first anchor 232 is disposed on the power divider 25, the at least two contacts 233 are disposed on the surface of the signal lines 21 at intervals, each signal line 21 is provided with a contact 233, the upper electrode cantilever beam 231 is disposed on the first anchor 232 and above the contacts 233, and the first release hole array 234 is distributed on the upper electrode cantilever beam 231.
In this embodiment, the contact between the upper electrode 23 and the contact 233 can be effectively enhanced by adopting a plurality of contacts 233, so that the reliability problem caused by the virtual junction of the MEMS switch is avoided, and the reliability of the MEMS switch is higher as the number of the contacts 233 is greater; however, the larger the number of contacts 233, the larger the device size, and thus, the number of contacts 233 is preferably 2, i.e., a double contact structure is adopted, in consideration of the reliability of the MEMS switch and the device size. Specifically, the shape of the contact 233 includes, but is not limited to, a rectangular parallelepiped, a cylinder, a hemisphere, a cone, and the like.
In one embodiment, the first array of release holes 234 includes a plurality of first release holes in an array, the first array of release holes 234 having a number of rows ranging from 1 to 6 and a number of columns ranging from 1 to 8, the first release holes in each row or column having a pitch ranging from 4 to 8 μm, and each first release hole having a diameter ranging from 4 to 10 μm.
Referring to fig. 5 and fig. 6, fig. 6 is a schematic structural diagram of a driving electrode according to an embodiment of the invention. The driving electrode 24 includes an electrode 241, a lead-out wire 242, and a pad (pad) 243, wherein the electrode 241 is located between the end of the signal line 21 and the power divider 25 and below the cantilever 231; one end of the lead wire 242 is connected with the electrode 241, and the other end is connected with the pad (pad) 243, so that the interconnection between the electrode 241 and the pad (pad) 243 is realized; the ground line 22 is located at both sides of the lead-out line 242 and surrounds the pad (pad) 243 so that the ground lines at both sides of the driving electrode 24 are grounded.
Specifically, the pad (pad) 243 has a rectangular structure. The electrode 241 may have a rectangular parallelepiped shape or a convex shape. Preferably, the electrode 241 has a convex structure, and a convex portion of the convex structure is located between the two contacts 233. It will be appreciated that when the contacts 233 are of a double contact configuration, the signal lines under the two contacts 233 are of a concave configuration, and the convex portions of the convex electrodes 241 are matched with the concave configuration. The electrode 241 has a convex structure, which can increase the area of the driving electrode and reduce the driving voltage.
Referring to fig. 7, fig. 7 is a schematic structural diagram of a power divider according to an embodiment of the present invention. The power divider 25 comprises a plurality of first branches 251 and second branches 252, the plurality of first branches 251 and the second branches 252 form a star structure, the plurality of first branches 251 are in one-to-one correspondence with the plurality of signal lines 21, and the two MEMS single pole multiple throw switches 20 are connected through the second branches 252.
In the present embodiment, the number of the first branches 251 is the same as the number of the signal lines 21, each signal line 21 corresponds to a first branch 251, and the plurality of first branches 251 and the second branches 252 together form a star structure; specifically, the angles formed by two adjacent branches may be equal or different, and preferably, the angles formed by two adjacent branches are equal. For example, when the number of the signal lines 21 is 4, the number of the first branches is also 4, and the 4 first branches 251 and the second branches 252 form a star structure together, the angle between the adjacent two branches is 72 °.
Further, the two MEMS single pole, multi-throw switches 20 are connected by a second branch 252 such that the two MEMS single pole, multi-throw switches 20 form a mirror image structure.
Referring to fig. 8 and 9, fig. 8 is a schematic structural diagram of an air bridge in a multi-pole multi-throw switch based on an RF MEMS switch according to an embodiment of the present invention, and fig. 9 is a top view of an air bridge in a multi-pole multi-throw switch based on an RF MEMS switch according to an embodiment of the present invention. The air bridge 26 includes a solid support cantilever beam 261, a second anchor point 262, a third anchor point 263 and a second release hole array 264, wherein the second anchor point 262 is disposed on the ground line 22 and is located at one side of the signal line 21, the third anchor point 263 is disposed on the ground line 22 and is located at the other side of the signal line 21, the solid support cantilever beam 261 is disposed on the second anchor point 262 and the third anchor point 263 to span the signal line 21, and the second release hole array 264 is distributed on the surface of the solid support cantilever beam 261.
In this embodiment, an air bridge crossing the signal line is disposed on the surface of the ground wire, and the ground wires separated by the signal line are connected to realize common ground of the ground wires.
In one embodiment, the air bridge 26 may or may not be provided above the drive electrode 24 and the second leg 252, and preferably the air bridge 26 is not provided above the drive electrode 24 and the second leg 252.
In one embodiment, the second array of release holes 264 comprises a plurality of second release holes in an array, the second array of release holes 264 having a number of rows ranging from 1 to 6 and a number of columns ranging from 1 to 12, the second release holes in each row or column having a pitch ranging from 6 to 10 μm and each second release hole having a diameter ranging from 6 to 10 μm.
Referring to fig. 10, fig. 10 is a schematic diagram of a four-pole four-throw switch based on an RF MEMS switch according to an embodiment of the present invention. Taking a four-pole four-throw switch as an example, the number of signal lines 21, the number of upper electrodes 23, the number of driving electrodes 24 and the number of first branches 251 in each MEMA single-pole multi-throw switch are all 4, wherein the 4 signal lines 21 of one MEMA single-pole multi-throw switch serve as 4 input ends of a radio frequency signal RF in, namely, port1, port2, port3 and Port4, and the 4 signal lines 21 of the other MEMA single-pole multi-throw switch serve as 4 output ends of Port5, port6, port7 and Port8, and output a radio frequency signal RF out.
Specifically, when the driving electrode 24 applies a driving voltage, the certain upper electrode 23 receives an electrostatic force, so that the upper electrode 23 bends toward the signal line 21 and contacts the contact 233, and at this time, the certain MEMS switch is in a conductive state; when driving voltages are respectively applied to the driving electrodes 24 on two sides of the four-pole four-throw switch, the four-pole four-throw switch is in a conducting state, and an input signal is output by a conducting passage of the switch; when the drive voltage is removed, the upper electrode 24 is reset and the MEMS switch is in an open state.
Referring to fig. 11, fig. 11 is a diagram of an insertion loss simulation result of a four-pole four-throw switch based on an RF MEMS switch according to an embodiment of the present invention. As can be seen from fig. 11, the insertion loss is better than 1.19dB in the DC-26.5 GHz frequency range.
Referring to fig. 12, fig. 12 is a diagram of an isolation simulation result of a four-pole four-throw switch based on an RF MEMS switch according to an embodiment of the present invention. As can be seen from fig. 12, the isolation is excellent at 31.75dB in the DC-26.5 GHz frequency range.
Referring to fig. 13, fig. 13 is a standing wave ratio simulation result diagram of a four-pole four-throw switch based on an RF MEMS switch according to an embodiment of the present invention. As can be seen from fig. 13, the standing wave ratio is less than 1.7 in the DC-26.5 GHz frequency range.
According to the multi-pole multi-throw switch, two MEMS single-pole multi-throw switches are cascaded, a contact adopts a multi-contact structure, an upper electrode cantilever beam is fixed on a signal line through a first anchor point, and a star-shaped power divider is combined, so that the design of a four-pole four-throw switch based on MEMS is realized; the MEMS switch is adopted as the main body of the device, so that the insertion loss of the device can be effectively reduced, the isolation degree of the device is improved, the size of the device is reduced, the working frequency of the device is widened, and the two MEMS single-pole multi-throw switches are cascaded, so that the gating function of a multichannel signal can be realized.
The foregoing is a further detailed description of the invention in connection with the preferred embodiments, and it is not intended that the invention be limited to the specific embodiments described. It will be apparent to those skilled in the art that several simple deductions or substitutions may be made without departing from the spirit of the invention, and these should be considered to be within the scope of the invention.
Claims (9)
1. A RF MEMS switch-based multi-pole, multi-throw switch comprising:
a substrate (10);
two MEMS single pole, multi-throw switches (20) disposed on the substrate (10) and in cascade;
the MEMS single-pole multi-throw switch (20) comprises a plurality of signal wires (21), a ground wire (22), a plurality of upper electrodes (23), a plurality of driving electrodes (24), a power divider (25) and a plurality of air bridges (26), wherein the plurality of signal wires (21) and the plurality of driving electrodes (24) are distributed on the surface of the substrate (10), the ground wire (22) is positioned on the substrate (10) and arranged on both sides of the plurality of signal wires (21) and on the periphery of the driving electrodes (24), the power divider (25) is arranged on the substrate (10), the power divider (25) comprises a plurality of first branches (251) and a plurality of second branches (252), the plurality of first branches (251) and the second branches (252) form a star-shaped structure, the plurality of first branches (251) are connected with each signal wire (21), two MEMS single-pole multi-throw switches (20) are connected through the second branches (252), each end part (24) of each driving electrode (21) is positioned on the signal wire (25) and each power divider (25) is arranged on the substrate (25), two MEMS single pole multi-throw switches (20) are connected through the power divider (25), and each air bridge (26) is located on the surface of the ground wire (22) and spans the signal wire (21).
2. The RF MEMS switch-based multi-pole, multi-throw switch of claim 1, wherein the number of signal lines (21), the number of upper electrodes (23), and the number of drive electrodes (24) are all 4.
3. RF MEMS switch-based multi-pole, multi-throw switch according to claim 1, characterized in that the signal line (21) adopts a bent structure at the crossing position of the air bridge (26).
4. The RF MEMS switch-based multi-pole, multi-throw switch of claim 1, wherein the upper electrode (23) comprises an upper electrode cantilever (231), a first anchor point (232), at least two contacts (233), and a first array of release holes (234), wherein,
the first anchor point (232) is arranged on the power divider (25), the at least two contacts (233) are arranged on the signal line (21) at intervals, the upper electrode cantilever beam (231) is arranged on the first anchor point (232) and located above the contacts (233), and the first release hole array (234) is distributed on the upper electrode cantilever beam (231).
5. The RF MEMS switch-based multi-pole, multi-throw switch of claim 4, wherein the first array of release holes (234) comprises a plurality of first release holes distributed in an array, the first array of release holes (234) having a number of rows ranging from 1 to 6, a number of columns ranging from 1 to 8, a pitch of the first release holes of each row or column ranging from 4-8 μιη, and a diameter of each first release hole ranging from 4-10 μιη.
6. The RF MEMS switch-based multi-pole, multi-throw switch of claim 4, wherein the actuation electrode (24) comprises an electrode (241), a lead-out wire (242), and a pad (243), wherein,
the electrode (241) is positioned between the end of the signal line (21) and the power divider (25) and below the cantilever beam (231);
one end of the lead wire (242) is connected with the electrode (241), and the other end is connected with the bonding pad (243).
7. The RF MEMS switch-based multi-pole, multi-throw switch of claim 6, wherein the electrode (241) is a zig-zag structure with a protruding portion between the contacts (233).
8. The RF MEMS switch-based multi-pole, multi-throw switch of claim 1, wherein the air bridge (26) comprises a solidly-supported cantilever (261), a second anchor point (262), a third anchor point (263), and a second array of release holes (264), wherein,
the second anchor point (262) is arranged on the ground wire (22) and is located on one side of the signal wire (21), the third anchor point (263) is arranged on the ground wire (22) and is located on the other side of the signal wire (21), the fixed cantilever beam (261) is arranged on the second anchor point (262) and the third anchor point (263) so as to span the signal wire (21), and the second release hole array (264) is distributed on the fixed cantilever beam (261).
9. The RF MEMS switch-based multi-pole, multi-throw switch of claim 8, wherein the second array of release holes (264) comprises a plurality of second release holes distributed in an array, the second array of release holes (264) having a number of rows ranging from 1 to 6, a number of columns ranging from 1 to 12, a pitch of the second release holes of each row or column ranging from 6 to 10 μιη, and a diameter of each second release hole ranging from 6 to 10 μιη.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102074422A (en) * | 2010-12-31 | 2011-05-25 | 航天时代电子技术股份有限公司 | Switch array based on MEMS (Micro-Electro-Mechanical Systems) switch |
| CN108648964A (en) * | 2018-06-15 | 2018-10-12 | 中北大学 | A kind of RF MEMS Switches based on no release aperture upper electrode arrangement |
| CN110137634A (en) * | 2019-05-09 | 2019-08-16 | 中北大学 | A kind of K-type hilted broadsword four-throw RF MEMS Switches |
| CN110783673A (en) * | 2019-11-08 | 2020-02-11 | 中北大学 | Multi-channel interdigital adjustable filter based on MEMS switch |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20180083417A1 (en) * | 2016-09-16 | 2018-03-22 | Bardia Pezeshki | Optical module for terabit switch |
-
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- 2021-05-08 CN CN202110502070.7A patent/CN113394059B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102074422A (en) * | 2010-12-31 | 2011-05-25 | 航天时代电子技术股份有限公司 | Switch array based on MEMS (Micro-Electro-Mechanical Systems) switch |
| CN108648964A (en) * | 2018-06-15 | 2018-10-12 | 中北大学 | A kind of RF MEMS Switches based on no release aperture upper electrode arrangement |
| CN110137634A (en) * | 2019-05-09 | 2019-08-16 | 中北大学 | A kind of K-type hilted broadsword four-throw RF MEMS Switches |
| CN110783673A (en) * | 2019-11-08 | 2020-02-11 | 中北大学 | Multi-channel interdigital adjustable filter based on MEMS switch |
Non-Patent Citations (1)
| Title |
|---|
| RF MEMS单刀四掷矩阵开关的研究;金铃;;现代雷达(10);全文 * |
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