CN113380966A - OLED device structure and preparation method thereof - Google Patents
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Abstract
The invention provides a preparation method of an OLED device structure applied to the technical field of OLED device structures, and also relates to the OLED device structure, wherein the preparation method of the OLED device structure comprises the following steps: s1, forming a film by an anode; s2, anode patterning; s3, PDL film forming; s4, PDL imaging; s5, forming a nano metal cluster film: forming a cluster film by using a vacuum evaporation or sol spin coating mode, and controlling the size of the nano metal cluster by controlling the vacuum degree, the evaporation time or the concentration of the sol and the spin coating speed and time; the metal in the nano metal cluster, the preparation method of the OLED device structure and the OLED device structure have the advantages of simple steps, light loss caused by PDL (patterned doped drain) areas is reduced, and the light emitting efficiency of the device is improved.
Description
Technical Field
The invention belongs to the technical field of OLED device structures, and particularly relates to a preparation method of an OLED device structure.
Background
The silicon-based OLED micro-display takes a monocrystalline silicon chip as a substrate, and the pixel size is smaller and the integration level is higher by means of a mature CMOS process, so that the silicon-based OLED micro-display can be manufactured into a near-to-eye display product which is comparable to large-screen display and is widely concerned. Based on the technical advantages and wide market, in the fields of military and consumer electronics, the silicon-based OLED micro-display will raise the new wave of near-to-eye display, and bring unprecedented visual experience for users. Silicon-based OLEDs are top emitting devices, and are applied to AR products, and the devices are required to have higher brightness, in order to meet the product requirements: on one hand, OLED materials with higher performance are used to improve the luminous efficiency; on the other hand, a multi-cell stack structure is used to improve light emission efficiency and brightness. The two methods have limitations, the research and development period of the OLED material is long, and the performance improvement also has obvious bottlenecks; and the laminated device has high working voltage and high power consumption. For a conventional OLED device, the luminous efficiency is only about 20% (external quantum efficiency).
Disclosure of Invention
The technical problem to be solved by the invention is as follows: aiming at the defects of the prior art, the preparation method of the OLED device structure is simple in step, utilizes the downward emitted light in the top emission device to excite the metal clusters to form surface plasmons, utilizes the characteristic that the surface plasmons convert the light absorbed by PDL into light again, reduces the light loss caused by a PDL region, and improves the light emitting efficiency of the device.
To solve the technical problems, the invention adopts the technical scheme that:
the invention relates to a preparation method of an OLED device structure, which comprises the following steps:
s1, forming a film by an anode;
s2, anode patterning;
s3, PDL film forming;
s4, PDL imaging;
s5, forming a nano metal cluster film: forming a film of the nano metal cluster by using a vacuum evaporation or sol spin coating mode, and controlling the size of the nano metal cluster by controlling the vacuum degree, the evaporation time or the concentration of the sol and the spin coating speed and time; the metal of the nano-metal cluster is Ag or Na.
When the anode is formed into a film, a metal anode reflecting layer and a transparent conductive anode ITO layer are deposited on a substrate by using PVD physical vapor deposition equipment, wherein the anode reflecting layer is made of high-reflection metal such as Ag or Al, the thickness of the anode reflecting layer is 100nm-150nm, and the thickness of the anode ITO layer is 20nm-40 nm.
The thickness of the anode reflecting layer is matched with that of the anode ITO layer, so that the reflectivity of the anode of the device is more than 90%, and the work function matched with the OLED device is more than or equal to 4.6 eV.
When the anode is patterned, the anode ITO layer is etched into a pixel level shape by using a photo process.
When PDL is formed, a PDL layer is deposited by using a CVD (chemical vapor deposition) process, wherein the PDL layer is SIO or SIN, and the thickness of the PDL layer is 50nm-100 nm.
When PDL is patterned, a photo process is used for etching the PDL layer into a trapezoid, and the tap angle of the PDL layer is less than 60 degrees.
The invention also relates to an OLED device structure which is simple in structure, utilizes the characteristic that light emitted downwards in the top emission device excites the metal clusters to form surface plasmons, and utilizes the surface plasmons to convert light absorbed by PDL into light again, thereby reducing light loss caused by PDL regions and improving the light emitting efficiency of the device.
The OLED device structure comprises a substrate, an anode reflecting layer, an anode ITO layer, a PDL layer, a nano metal cluster layer and an OLED layer.
An anode reflecting layer is arranged on one side of the substrate, an anode ITO layer is arranged on the other side of the anode reflecting layer, and the PDL layer penetrates through the anode reflecting layer and is arranged on one side of the anode reflecting layer, which is attached to the substrate.
The nanometer metal cluster layer coats the PDL layer, and extends to the surface of the anode ITO layer.
The OLED layer is connected with the anode ITO layer, and the OLED layer is coated with the nano metal cluster layer.
By adopting the technical scheme of the invention, the following beneficial effects can be obtained:
the preparation method of the OLED device structure and the OLED device structure provided by the invention are technically improved aiming at the defects in the prior art, when the nano metal cluster is formed into a film, the film is formed by using a vacuum evaporation or sol spin coating mode, and the size of the nano metal cluster is controlled by controlling the vacuum degree, the evaporation time or the concentration of the sol and the speed and time of the spin coating; the metal in the nano metal cluster is usually metal silver (Ag) and metal Na, the metal silver (Ag) and the metal Na are easy to be excited by light to form surface plasmon polaritons after the nano metal cluster is formed, and the nano Ag/Na particle solution is easy to evaporate and manufacture. Most of the light is confined inside the device for optical and electrical reasons, and the surface plasmon mode is one of the electrical reasons for limiting the light extraction. The main action mechanism is that the anode of the top-emitting OLED is provided with a total reflection metal layer, the cathode of the top-emitting OLED is provided with a semi-reflection semi-transparent metal layer, about 40% of light is coupled into a metal surface plasma mode under the influence of a metal electrode and is finally converted into Joule heat, and the optical coupling is a loss mechanism. The invention provides a preparation method of an OLED device structure, aiming at solving the following problems: 1. in the OLED, a Pixel Definition Layer (PDL) is indispensable and can prevent optical crosstalk and electrical crosstalk, but the PDL reduces the aperture ratio of a pixel, the PDL is made of common SiO or SiN materials, most of light irradiated on the PDL is lost due to light absorption and waveguide effect, the metal nanoclusters are added on the upper surface of the PDL, photons irradiated on the PDL can resonate with the metal nanoclusters to form local surface plasmons, and the plasmons can emit absorbed light energy in the form of light, so that the light loss in a PDL area can be reduced; 2. the local surface plasmon polariton can improve the optical coupling efficiency, and further improve the luminous efficiency of the device on the premise of not changing the material and the structure of the device. The preparation method of the OLED device structure and the OLED device structure have the advantages that the steps are simple, the metal clusters are excited by utilizing the light emitted downwards in the top emission device to form surface plasmon polaritons, the light absorbed by PDL is converted into light again by utilizing the characteristic that the surface plasmon polaritons are luminous, the light loss caused by PDL areas is reduced, the luminous efficiency of the device is improved, and the OLED luminous efficiency is improved.
Drawings
The contents of the description and the references in the drawings are briefly described as follows:
FIG. 1 is a schematic structural diagram of an OLED device structure according to the present invention;
FIG. 2 is a schematic diagram of an OLED device structure according to the present invention during anodic film formation;
FIG. 3 is a schematic diagram of a method for fabricating an OLED device structure according to the present invention during anode patterning;
FIG. 4 is a schematic diagram of PDL film formation in the OLED device structure manufacturing method according to the present invention;
FIG. 5 is a schematic diagram of PDL patterning performed by the method for fabricating an OLED device structure according to the present invention;
FIG. 6 is a schematic diagram of a state of a method for fabricating an OLED device structure according to the present invention during a nano-metal cluster film formation;
FIG. 7 is a schematic diagram of another state of the method for fabricating an OLED device structure according to the present invention during the formation of a nano-metal cluster film;
in the drawings, the reference numbers are respectively: 1 a-substrate, 1 b-anode reflection layer, 1 c-anode ITO layer, 1 d-PDL layer, 1 e-nano metal cluster layer and 1 f-OLED layer.
Detailed Description
The following detailed description of the embodiments of the present invention, such as the shapes and structures of the components, the mutual positions and connection relations among the components, the functions and operation principles of the components, will be made by referring to the accompanying drawings and the description of the embodiments:
as shown in fig. 1 to 7, the present invention is a method for manufacturing an OLED device structure, which comprises the following steps: s1, forming a film by an anode; s2, anode patterning; s3, PDL film forming; s4, PDL imaging; s5, forming a nano metal cluster film: vacuum evaporation or sol spin coating is used for forming a film of the nano metal cluster, and the size of the nano metal cluster is controlled by controlling the vacuum degree, the evaporation time or the concentration of the sol and the speed and time of the spin coating (vacuum evaporation is adopted, the vacuum degree is below 1E-5Pa, the evaporation speed is controlled within 0.1 nm/S; the spin coating mode is that the rotating speed is controlled within 10-20 r/min, and the concentration is 0.1-0.3 g/ml); the medium metal of the nano-metal cluster. The above steps, the technical improvement is carried out aiming at the defects existing in the prior art, when the nano metal cluster is formed into a film, as shown in fig. 6, the film is formed by using a vacuum evaporation or sol spin coating mode, and the size of the nano metal cluster is controlled by controlling the vacuum degree, the evaporation time or the concentration of the sol and the speed and time of the spin coating; the metal in the nano metal cluster is usually silver (Ag), so that the nano Ag particle solution is easy to evaporate and manufacture. Most of the light is confined inside the device for optical and electrical reasons, and the surface plasmon mode is one of the electrical reasons for limiting the light extraction. The main action mechanism is that the anode of the top-emitting OLED is provided with a total reflection metal layer, the cathode of the top-emitting OLED is provided with a semi-reflection semi-transparent metal layer, about 40% of light is coupled into a metal surface plasma mode under the influence of a metal electrode and is finally converted into Joule heat, and the optical coupling is a loss mechanism. The invention provides a preparation method of an OLED device structure, aiming at solving the following problems: 1. in the OLED, a Pixel Definition Layer (PDL) is indispensable and can prevent optical crosstalk and electrical crosstalk, but the PDL reduces the aperture ratio of a pixel, the PDL is made of common SiO or SiN materials, most of light irradiated on the PDL is lost due to light absorption and waveguide effect, the metal nanoclusters are added on the upper surface of the PDL, photons irradiated on the PDL can resonate with the metal nanoclusters to form local surface plasmons, and the plasmons can emit absorbed light energy in the form of light, so that the light loss in a PDL area can be reduced; 2. the local surface plasmon polariton can improve the optical coupling efficiency, and further improve the luminous efficiency of the device on the premise of not changing the material and the structure of the device. The preparation method of the OLED device structure is simple in steps, utilizes the characteristic that light emitted downwards in the top emission device excites the metal clusters to form surface plasmons, and utilizes the surface plasmons to convert light absorbed by PDL into light again, so that light loss caused by PDL area is reduced, the light emitting efficiency of the device is improved, and the OLED light emitting efficiency is improved.
When the anode is formed into a film, a metal anode reflecting layer 1b and a transparent conductive anode ITO layer 1c are deposited on the substrate 1a by using a PVD physical vapor deposition device, wherein the anode reflecting layer 1b is made of a metal with high reflection, such as Ag or Al, the thickness of the anode reflecting layer 1b is 100nm-150nm, and the thickness of the anode ITO layer 1c is 20nm-40 nm. The thickness of the anode reflecting layer 1b is matched with that of the anode ITO layer 1c, so that the reflectivity of the anode of the device is more than 90%, and the work function matched with the OLED device is more than or equal to 4.6 eV.
When the anode is patterned, the anode ITO layer 1c is etched into a pixel level shape by using a photo process.
When PDL is formed, a CVD (chemical vapor deposition) process is used for depositing a PDL layer 1d, wherein the PDL layer 1d is SIO or SIN, and the thickness of the PDL layer 1d is 50nm-100 nm. PDL film forming: as shown in FIG. 3, PDL film is deposited by CVD, PDL is SIO or SIN, and thickness is 50nm-100 nm; the thickness can prevent the crosstalk of light and ensure a smaller tap angle in the PDL imaging process.
When PDL is patterned, the PDL layer 1d is etched into a trapezoid by using a photo process, and the tap angle of the PDL layer 1d is less than 60 degrees. PDL patterning: referring to FIG. 5, PDL is etched to a trapezoidal shape with a tap angle < 60 using a conventional photo process; the small tap angle can prevent the phenomenon of climbing and breaking of the film layer when the follow-up OLED is formed.
The invention also relates to an OLED device structure which is simple in structure, utilizes the characteristic that light emitted downwards in the top emission device excites the metal clusters to form surface plasmons, and utilizes the surface plasmons to convert light absorbed by the anode into light again, thereby reducing light loss caused by a PDL region and improving the light emitting efficiency of the device.
The OLED device structure comprises a substrate 1a, an anode reflecting layer 1b, an anode ITO layer 1c, a PDL layer 1d, a nano metal cluster layer 1e and an OLED layer 1 f. According to the invention, the metal nanoclusters are added on the upper surface of PDL, photons irradiated to PDL can resonate with the metal nanoclusters to form local surface plasmons, and the plasmons can emit absorbed light energy in the form of light, so that the light loss in a PDL region can be reduced; 2. the local surface plasmon polariton can improve the optical coupling efficiency, and further improve the luminous efficiency of the device on the premise of not changing the material and the structure of the device.
An anode reflecting layer 1b is arranged on one side of the substrate 1a, an anode ITO layer 1c is arranged on the other side of the anode reflecting layer 1b, and the PDL layer 1d penetrates through the anode reflecting layer 1b and is attached to one side, provided with the anode reflecting layer 1b, of the substrate 1 a. The nanometer metal cluster layer 1e covers the PDL layer 1d, and the nanometer metal cluster layer 1e extends to the surface of the anode ITO layer 1 c. The OLED layer 1f is connected with the anode ITO layer 1c, and the OLED layer 1f simultaneously covers the nano metal cluster layer 1 e.
In the preparation method of the OLED device structure and the device structure, the theory of plasmon enhanced luminescence shows that: when the free electron group on the metal surface is simultaneously deviated from the equilibrium position in the same direction under the excitation of the incident photon, the free electron group returns to the equilibrium position under the action of the metal positive ion. The free electrons which are reversely returned to the equilibrium position have speed, so that the electrons rush out and continue to move back and forth until the kinetic energy is completely converted into potential energy, and the motion is repeated in such a way, and the periodic simple harmonic motion of the free electron group is formed. Like a pendulum and a swing, eventually all dissipate, converting to internal energy, heating the metal. This sort of collective resonance caused by the periodic simple harmonic motion of free electrons is called surface plasmon. The surface plasmon can be directly excited only by polarized light with a proper frequency without considering the matching of wave vectors and the angle of incident light. The local state can be converted to the propagating state when the resonance frequency of the local state surface plasmon and the frequency of the propagating state surface plasmon are close.
The preparation method of the OLED device structure and the OLED device structure provided by the invention are technically improved aiming at the defects in the prior art, when the nano metal cluster is formed into a film, the film is formed by using a vacuum evaporation or sol spin coating mode, and the size of the nano metal cluster is controlled by controlling the vacuum degree, the evaporation time or the concentration of the sol and the speed and time of the spin coating; the metal in the nano metal cluster is usually metal silver (Ag) and metal Na, the metal silver (Ag) and the metal Na are easy to be excited by light to form surface plasmon polaritons after the nano metal cluster is formed, and the nano Ag/Na particle solution is easy to evaporate and manufacture. Most of the light is confined inside the device for optical and electrical reasons, and the surface plasmon mode is one of the electrical reasons for limiting the light extraction. The main action mechanism is that the anode of the top-emitting OLED is provided with a total reflection metal layer, the cathode of the top-emitting OLED is provided with a semi-reflection semi-transparent metal layer, about 40% of light is coupled into a metal surface plasma mode under the influence of a metal electrode and is finally converted into Joule heat, and the optical coupling is a loss mechanism. The invention provides a preparation method of an OLED device structure, aiming at solving the following problems: 1. in the OLED, a Pixel Definition Layer (PDL) is indispensable and can prevent optical crosstalk and electrical crosstalk, but the PDL reduces the aperture ratio of a pixel, the PDL is made of common SiO or SiN materials, most of light irradiated on the PDL is lost due to light absorption and waveguide effect, the metal nanoclusters are added on the upper surface of the PDL, photons irradiated on the PDL can resonate with the metal nanoclusters to form local surface plasmons, and the plasmons can emit absorbed light energy in the form of light, so that the light loss in a PDL area can be reduced; 2. the local surface plasmon polariton can improve the optical coupling efficiency, and further improve the luminous efficiency of the device on the premise of not changing the material and the structure of the device. The preparation method of the OLED device structure and the OLED device structure have the advantages that the steps are simple, the metal clusters are excited by utilizing the light emitted downwards in the top emission device to form surface plasmon polaritons, the light absorbed by PDL is converted into light again by utilizing the characteristic that the surface plasmon polaritons are luminous, the light loss caused by PDL areas is reduced, the luminous efficiency of the device is improved, and the OLED luminous efficiency is improved.
The present invention has been described in connection with the accompanying drawings, and it is to be understood that the invention is not limited to the specific embodiments disclosed, but is intended to cover various modifications, changes and equivalents of the embodiments of the invention, and its application to other applications without departing from the spirit and scope of the invention.
Claims (10)
1. A preparation method of an OLED device structure is characterized by comprising the following steps: the preparation method of the OLED device structure comprises the following preparation steps:
s1, forming a film by an anode;
s2, anode patterning;
s3, PDL film forming;
s4, PDL imaging;
s5, forming a nano metal cluster film: forming a film of the nano metal cluster by using a vacuum evaporation or sol spin coating mode, and controlling the size of the nano metal cluster by controlling the vacuum degree, the evaporation time or the concentration of the sol and the spin coating speed and time; the metal of the nano-metal cluster is Ag or Na.
2. The method of making an OLED device structure of claim 1, wherein: when the anode is formed, an anode reflecting layer (1b) and a transparent conductive anode ITO layer (1c) of metal are deposited on a substrate (1a) by using a PVD device, wherein the anode reflecting layer (1b) is made of high-reflection metal such as Ag or Al, the thickness of the anode reflecting layer (1b) is 100nm-150nm, and the thickness of the anode ITO layer (1c) is 20nm-40 nm.
3. The method of making an OLED device structure of claim 2, wherein: the thickness of the anode reflecting layer (1b) is matched with that of the anode ITO layer (1c), so that the reflectivity of the anode of the device is more than 90%, and the work function matched with the OLED device is more than or equal to 4.6 eV.
4. The method of fabricating an OLED device structure of claim 1 or 2, wherein: when the anode is patterned, the anode ITO layer (1c) is etched into a pixel-level shape by using a photo process.
5. The method of fabricating an OLED device structure of claim 1 or 2, wherein: when PDL is formed, a PDL layer (1d) is deposited by using a CVD process, wherein the PDL layer (1d) is SIO or SIN, and the thickness of the PDL layer (1d) is 50nm-100 nm.
6. The method of fabricating an OLED device structure of claim 1 or 2, wherein: when PDL is patterned, the PDL layer (1d) is etched into a trapezoid by using a photo process, and the tap angle of the PDL layer (1d) is less than 60 degrees.
7. The OLED device structure prepared by the method of claim 1, wherein: the OLED device structure comprises a substrate (1a), an anode reflecting layer (1b), an anode ITO layer (1c), a PDL layer (1d), a nano metal cluster layer (1e) and an OLED layer (1 f).
8. The OLED device structure of claim 7, wherein: the solar cell comprises a substrate (1a), an anode reflecting layer (1b) is arranged on one side of the substrate (1a), an anode ITO layer (1c) is arranged on the other side of the anode reflecting layer (1b), and a PDL layer (1d) penetrates through the anode reflecting layer (1b) and is attached to one side, provided with the anode reflecting layer (1b), of the substrate (1 a).
9. The OLED device structure of claim 8, wherein: the nanometer metal cluster layer (1e) covers the PDL layer (1d), and the nanometer metal cluster layer (1e) extends to the surface of the anode ITO layer (1 c).
10. The OLED device structure of claim 9, wherein: the OLED layer (1f) is connected with the anode ITO layer (1c), and the OLED layer (1f) covers the nano metal cluster layer (1e) at the same time.
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| CN108615752A (en) * | 2018-07-02 | 2018-10-02 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
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Application publication date: 20210910 |