CN113380664A - Two-fluid nozzle for cleaning substrate - Google Patents

Abstract

The present invention relates to a two-fluid nozzle for substrate cleaning that ejects droplets of a mixture of a liquid and a gas onto a surface of a substrate, and more particularly to the following two-fluid nozzle for substrate cleaning: the liquid droplet generating apparatus includes a two-fluid nozzle for cleaning a substrate, a gas inlet port for introducing gas into the two-fluid nozzle, a gas outlet port for discharging gas from the gas inlet port, and a gas outlet port for discharging gas from the gas outlet port.

Description

Two-fluid nozzle for cleaning substrate

Technical Field

The present invention relates to a two-fluid nozzle for cleaning a substrate, which ejects droplets of a mixture of a liquid and a gas onto a surface of the substrate.

Background

Various processes such as photolithography, etching, thin film deposition, etc. are performed on a substrate for manufacturing a semiconductor chip, a Light Emitting Diode (LED) chip, etc.

As described above, foreign substances such as particles are generated during various processes performed on the substrate, and in order to remove such foreign substances, a process of cleaning the substrate is performed in a step before or after performing each process.

As a method of cleaning a substrate, there is a method of: droplets of a mixture generated by mixing a liquid as a processing liquid (cleaning liquid) with a gas are generated, and the droplets are caused to collide with the surface of a substrate as a processing object. The method as described above may be performed by a two-fluid nozzle that generates and ejects liquid droplets of a mixture of a liquid as a processing liquid and a gas.

Known patents for such a two-fluid nozzle for cleaning a substrate are those described in korean registered patent No. 10-0663133 (hereinafter, referred to as "patent document 1") and korean registered patent No. 10-1582248 (hereinafter, referred to as "patent document 2").

In the substrate processing apparatus of patent document 1, the nitrogen gas pipe communicates with the cylindrical flow path, and after the nitrogen gas is supplied to the cylindrical flow path through the nitrogen gas pipe, the nitrogen gas collides with deionized water discharged from the treatment liquid discharge port and mixes with the deionized water when discharged from the gas discharge port, thereby generating droplets. The nitrogen gas is discharged after being spirally rotated by the spiral-shaped grooves before being discharged through the gas discharge port.

In the case of the substrate processing apparatus of patent document 1, since nitrogen gas flows from a nitrogen gas pipe having a relatively small area to a cylindrical flow path having a relatively large area, the gas is simply flowed in the lower direction in the upper region of the cylindrical flow path in a state where a constant flow stream of nitrogen gas is not generated.

Therefore, when the nitrogen gas is discharged to the outside through the gas discharge port, the nitrogen gas is discharged in a state of a low gas flow rate, and therefore the velocity of the liquid droplets generated by the collision of the gas and the liquid is also relatively reduced.

Further, even if the nitrogen gas is caused to flow spirally through the grooves arranged in the lower region of the cylindrical flow path, a constant flow stream of nitrogen gas does not exist in most regions of the cylindrical flow path, and therefore, even if the nitrogen gas is caused to flow spirally through the grooves, the flow velocity of the nitrogen gas is not greatly increased, which may cause a drop in the droplet velocity.

In the case of patent document 2, the gas inlet and the gas flow path are simply connected, and the problem of patent document 1 described above occurs.

As described above, the conventional two-fluid nozzle for cleaning a substrate has the following problems: when the gas flows into the chamber, a separate structure for increasing the flow velocity of the gas is not disposed in the upper section of the chamber except for the spiral section of the lower section of the chamber, and the flow velocity of the gas is not increased. Therefore, it is required to develop a two-fluid nozzle for substrate cleaning which discharges gas at a high flow rate.

[ Prior art documents ]

[ patent document ]

[ patent document 1]1) Korean registered patent No. 10-0663133

[ patent document 2]2) Korean registered patent No. 10-1582248

Disclosure of Invention

[ problems to be solved by the invention ]

The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a two-fluid nozzle for substrate cleaning, which can generate liquid droplets having a mixture of high speed and fine particles by inducing a stable flow pressure and a stable flow stream of gas introduced from a gas inlet in a chamber disposed inside the two-fluid nozzle for substrate cleaning, stabilizing the flow pressure of gas discharged from a gas outlet, and increasing the flow rate of the gas, thereby causing the gas to collide strongly with the liquid.

[ means for solving problems ]

According to one aspect of the present invention, a two-fluid nozzle for cleaning a substrate includes: a main body provided with a first chamber in which gas flows and a second chamber communicating with the first chamber; a first gas supply portion communicating with the first chamber to supply gas to the first chamber; a liquid supply portion having the same central axis as that of the main body, at least a part of which is disposed in the second chamber, and provided with a liquid discharge port at the liquid supply portion end; and a gas discharge port communicating with the second chamber, the second chamber being formed inside the first chamber by a partition wall disposed inside the first chamber, and an upper portion of an opening of the second chamber communicating with the first chamber.

Further, it is characterized in that an upper portion of the opening of the second chamber is located at an upper portion than the first gas supply portion.

Further, it is characterized in that the central axis of the first chamber and the central axis of the second chamber are identical to each other.

Further, it is characterized in that the first gas supply portion is arranged eccentrically at one side with respect to a central axis of the main body.

Further, the method is characterized by further comprising: a spiral portion disposed at a lower portion of the liquid supply portion in such a manner as to be disposed at the second chamber, and formed with a plurality of spiral flow paths communicating with the gas discharge port, the spiral direction of the plurality of spiral flow paths being formed in the same direction as a direction in which the gas supplied to the first chamber through the first gas supply portion is spirally rotated within the first chamber.

Further, a 1 st-1 st guide part is provided, the 1 st-1 st guide part connecting a side of an inner wall of the first gas supply part and a side of an inner wall of the first chamber in an inclined manner so that a step is not generated between the side of the inner wall of the first gas supply part and the side of the inner wall of the first chamber communicating therewith.

Further, the 1 st-1 st guide part has a curvature.

Further, it is characterized in that the gas discharge port is arranged in a manner of surrounding the liquid discharge port, and has a ring shape.

In addition, the first gas supply part is provided with a 1 st-2 nd guide part inclined towards one side direction of the first gas supply part, and the section area of the first gas supply part is narrower as the first gas supply part is closer to the first chamber.

Further, the method is characterized by further comprising: and a second gas supply portion eccentric to the other side with respect to a central axis of the body and communicating with the first chamber.

In addition, the first gas supply part is provided with a 1 st-2 nd guide part inclined towards one side direction of the first gas supply part, the sectional area of the first gas supply part is narrower as the first gas supply part is closer to the first chamber, the second gas supply part is provided with a 2 nd-2 nd guide part inclined towards the other side direction of the second gas supply part, and the sectional area of the second gas supply part is narrower as the second gas supply part is closer to the first chamber.

[ Effect of the invention ]

As described above, the two-fluid nozzle for substrate cleaning according to the present invention has the following effects.

By generating a pressure difference between the first chamber and the second chamber which are separated from each other by the partition wall, the gas is accelerated to flow into the inside of the second chamber in a communication section of the first chamber and the second chamber. Therefore, the pressure and flow rate of the gas discharged from the gas discharge port are higher than those of conventional two-fluid nozzles for substrate cleaning under the same conditions, and droplets of a mixture having a higher velocity and fine particles can be generated.

By forming the first chamber and the second chamber by the partition wall structure, it is possible to effectively prevent the discharge pressure from being lowered by the direction vector of the supply pressure of the first gas supply portion and the second gas supply portion.

Since the first and second gas supply parts have an eccentric structure, the gas is rotated in a clockwise or counterclockwise direction inside the first and second chambers to form a spiral rotational flow, and thus loss of a flow pressure of the gas can be minimized.

The 1 st-1 st and 2 nd-1 st guides are configured such that the gas can smoothly flow along the inner wall of the first gas supply portion and the inner wall of the first chamber, and smoothly flow along the inner wall of the second gas supply portion and the inner wall of the first chamber. Therefore, the gas flows into the first chamber in a high-pressure and high-speed state due to the coanda effect, so that the reduction in the gas flow velocity and the loss in the flow pressure can be minimized.

The coanda effect of the gas flowing along the inner wall can be maximized by having the 1 st-2 nd guide part function to guide the gas supplied through the first gas supply part to the inner wall of the first gas supply part in one side direction and the inner wall of the first chamber in one side direction, and having the 2 nd-2 nd guide part function to guide the gas supplied through the second gas supply part to the inner wall of the second gas supply part in the other side direction and the inner wall of the first chamber in the other side direction. Therefore, the spiral rotational flow of the gas inside the first chamber may be further maximized together with the eccentric structure of the first and second gas supplies.

Since the gas spirally flows along the inner wall of the first chamber, the flow velocity of the gas generated when the gas collides with the liquid supply part can be reduced and the loss of the flow pressure can be minimized.

The gas flowing to the second chamber is discharged from the gas discharge port after flowing along the plurality of spiral flow paths, so that the flow rate of the gas discharged from the gas discharge port is increased, and thus the gas can collide with the liquid at a high flow rate. Therefore, the velocity of the droplets of the mixture generated by the collision of the liquid with the gas can be kept high for ejection.

Since the gas discharge port is arranged so as to surround the liquid discharge port and has a ring shape, it is possible to maintain a high flow rate due to the spiral swirling flow to be discharged to the outside when discharging the gas.

Since there is a partition wall that separates the first chamber from the second chamber, the flow velocity of the gas is accelerated in both the communication section of the first chamber and the second chamber and the communication section of the second chamber and the plurality of spiral flow paths, that is, two sections, so that an effective spiral rotational flow is achieved inside each of the first chamber, the second chamber, and the plurality of spiral flow paths, and thus, when the gas is discharged through the gas discharge port, it is possible to maintain a high-pressure, high-speed state of discharge. Therefore, compared to a conventional two-fluid nozzle for cleaning a substrate, a high-pressure and high-speed gas is discharged, and thus droplets having a mixture of high speed and fine particles can be generated.

The gas flowing from the first chamber into the second chamber is guided by the curved surface portion and the curved surface groove to achieve smooth flow of the gas into the second chamber, and thereby, a high gas discharge pressure can be maintained while maintaining a high flow rate of the gas inside the second chamber.

Drawings

Fig. 1 is a perspective view of a two-fluid nozzle for substrate cleaning according to a preferred embodiment of the present invention.

Fig. 2 is an exploded perspective view of fig. 1.

Fig. 3 is a sectional view of a-a' of fig. 1.

Fig. 4 is a sectional view of C-C' of fig. 2.

Fig. 5 is a sectional perspective view of D-D' of fig. 2.

Fig. 6 is a sectional view of B-B' of fig. 1.

Fig. 7 is a view illustrating flows of gas and liquid of a two-fluid nozzle for substrate cleaning according to a preferred embodiment of the present invention.

Fig. 8a is a diagram showing a distribution of flow pressure of gas inside a chamber in a cross-sectional view of the chamber of a conventional two-fluid nozzle for substrate cleaning.

Fig. 8b is a diagram showing a distribution of flow pressure of gas inside the chamber in a cross-sectional view of the chamber of the conventional two-fluid nozzle for substrate cleaning.

Fig. 8c is a diagram showing the distribution of the flow pressure of the gas inside the chamber in a cross-sectional view taken from the upper portion of the spiral portion of the chamber of the conventional two-fluid nozzle for substrate cleaning.

Fig. 9a is a diagram showing a flowing pressure distribution of gas inside the first chamber in a cross-sectional view seen from a side of the first chamber of the two-fluid nozzle for substrate cleaning according to the preferred embodiment of the present invention.

Fig. 9b is a diagram showing a flowing pressure distribution of gas inside the first chamber in a cross-sectional view from an upper portion of the first chamber of the two-fluid nozzle for substrate cleaning according to the preferred embodiment of the present invention.

Fig. 9c is a diagram showing the distribution of the flowing pressure of the gas inside the second chamber and the spiral portion in the cross-sectional view seen from the upper portion of the spiral portion of the two-fluid nozzle for substrate cleaning according to the preferred embodiment of the present invention.

Fig. 10 is a view showing a modification of the two-fluid nozzle for cleaning a substrate according to the present invention.

Detailed Description

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Advantages and features of the present invention and methods of accomplishing the same will become apparent from the following detailed description of the embodiments and the accompanying drawings. However, the present invention is not limited to the embodiments described herein, and may be embodied in different forms from each other. Rather, the embodiments described herein are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art, and the present invention will only be defined by the scope of the appended claims. Like reference numerals refer to like elements throughout the specification.

The terms used in the present specification are used for illustrating the embodiments and are not intended to limit the present invention. In this specification, the singular forms also include the plural forms unless the context clearly dictates otherwise. The use of "including" and/or "comprising" as used in the specification does not preclude the presence or addition of one or more other components, steps, acts and/or elements to the referenced components, steps, acts and/or elements.

In addition, since according to the preferred embodiments, the reference numbers disclosed according to the order of description are not necessarily limited to this order.

In addition, embodiments described in this specification will be described with reference to a cross-sectional view and/or a plan view, which are ideal illustrations of the present invention. In the drawings, the thicknesses of the film and the region are exaggerated for effective explanation of the technical contents. Accordingly, the form of the illustration may be distorted by manufacturing techniques and/or tolerances, etc. Accordingly, embodiments of the present invention are not limited to the specific form shown, but also include variations in form produced by the manufacturing process. Therefore, the regions illustrated in the drawings have a schematic property, and the patterns of the regions illustrated in the drawings are for illustrating a specific form of the element region, and are not intended to limit the scope of the invention.

In describing the various embodiments, for convenience, the same names and the same reference numerals are given to the components that perform the same functions even though the embodiments are different. In addition, the configurations and operations that have been described in the other embodiments will be omitted for the sake of convenience.

Hereinafter, a two-fluid nozzle 10 for cleaning a substrate according to a preferred embodiment of the present invention will be described with reference to fig. 1 to 7.

Fig. 1 is a perspective view of a two-fluid nozzle for substrate cleaning according to a preferred embodiment of the present invention, fig. 2 is an exploded perspective view of fig. 1, fig. 3 is a sectional view of a-a 'of fig. 1, fig. 4 is a sectional view of C-C' of fig. 2, fig. 5 is a sectional perspective view of D-D 'of fig. 2, fig. 6 is a sectional view of B-B' of fig. 1, and fig. 7 is a view illustrating flows of gas and liquid of the two-fluid nozzle for substrate cleaning according to a preferred embodiment of the present invention.

As shown in fig. 1 to 7, the two-fluid nozzle 10 for substrate cleaning according to the preferred embodiment of the present invention may include the following constitutions: a main body 100 in which a first chamber 310 in which gas flows and a second chamber 330 communicating with the first chamber 310 are disposed; a first gas supply part 700 communicating with the first chamber 310 to supply gas to the first chamber 310; a second gas supply part 800 eccentric to the other side with respect to the central axis of the body 100 and communicating with the first chamber 310; a liquid supply part 500 having the same central axis as that of the main body 100, at least a portion of which is disposed in the second chamber 330, and provided at an end thereof with a liquid discharge port 510; a gas exhaust port 331 disposed in communication with the second chamber 330 and surrounding the liquid exhaust port 510; and a spiral part 900 disposed at a lower portion of the liquid supply part 500 so as to be disposed in the second chamber 330, and formed with a plurality of spiral flow paths 910 communicating with the gas discharge port 331.

In the two-fluid nozzle 10 for substrate cleaning, the main body 100 is connected by a nozzle driving part (not shown) to be located at an upper portion of a wafer (not shown).

The nozzle driving part supports the two-fluid nozzle 10 for substrate cleaning in such a manner that the up-down lengthwise direction of the two-fluid nozzle 10 for substrate cleaning is perpendicular to the upper surface of the wafer (not shown), and the two-fluid nozzle 10 for substrate cleaning is moved on the wafer by the control of the control part (not shown).

The liquid supply portion 500 of the two-fluid nozzle 10 for substrate cleaning communicates with an external liquid supply portion, not shown, to receive liquid therefrom.

The first gas supply part 700 of the two-fluid nozzle for substrate cleaning 10 communicates with an external gas supply part (not shown) to receive gas therefrom.

The main body 100 forms an outer shape of the two-fluid nozzle 10 for substrate cleaning. Therefore, the central axis of the main body 100 is the same as the central axis of the two-fluid nozzle for substrate cleaning 10.

A first chamber 310 through which gas flows and a second chamber 330 communicating with the first chamber 310 are formed inside the main body 100.

As shown in fig. 2, the main body 100 may be formed by combining the upper body 110 and the lower body 130.

The upper body 110 is provided with a flange 111 and a liquid supply part 500, and the liquid supply part 500 is formed to protrude downward from the flange 111. A spiral part 900 is disposed at a lower portion of the liquid supply part 500.

The lower body 130 is provided with a first gas supply 700 and a second gas supply 800 communicating with the first chamber 310.

A jetting part 131 protruding in a lower direction is disposed at a lower portion of the lower body 130.

A hole 133 is formed at the center of the injection part 131, and a liquid discharge port 510 is disposed at the center of the hole 133.

A space between the injection part 131 and the end of the liquid supply part 500 is a gas discharge port 331.

The jetting part 131 is formed in such a manner that the spatial area thereof becomes smaller toward the lower part, and thus, the gas discharge port 331 may be arranged in such a manner as to surround the liquid discharge port 510 at a distance close to the liquid discharge port 510. The inner space of the injection part 131 is a lower region of the second chamber 330.

The lower body 130 is formed with a first chamber 310 opened in an upper direction.

The first chamber 310 is formed inside the main body 100 (specifically, the lower main body 130), and communicates with the first and second gas supplies 700 and 800 to provide a space in which the gases supplied from the first and second gas supplies 700 and 800 flow.

A partition wall 135 is formed in the first chamber 310 to extend in the upper direction of the lower body 130 and to be opened at the upper portion thereof. The second chamber 330 is formed by such a partition wall 135.

The second chamber 330 provides a space for accommodating a part of the liquid supply part 500 and the spiral part 900.

The second chamber 330 communicates with the first chamber 310. In detail, the second chamber 330 is formed inside the first chamber 310 by the partition wall 135 disposed inside the first chamber 310, and an upper portion of an opening of the second chamber 330 communicates with the first chamber 310.

At least a portion of the liquid supply part 500 is inserted and disposed in the second chamber 330.

The spiral 900 is inserted and disposed in the second chamber 330.

The first chamber 310 has a circular cross-section and the second chamber 330 also has a circular cross-section.

The second chamber 330 is disposed within the first chamber 310, and in this case, the central axis of the first chamber 310 and the central axis of the second chamber are disposed identically to each other.

The upper portion of the opening of the second chamber 330 is located at an upper portion than the first gas supply part 700 and the second gas supply part 800.

As described above, the main body 100 may be formed by combining the upper body 110 with the lower body 130, so that the first and second chambers 310 and 330 have a space closed from the outside when the upper body 110 is combined with the lower body 130, and thus gas may flow in the first and second chambers 310 and 330.

The sectional area of the upper chamber 310 is formed to be wider than that of the lower chamber 330.

The cross-sectional area of the lower chamber 330 is formed to be narrower than the cross-sectional area of the upper chamber 310, and is formed to be inclined in the central axis direction of the main body 100 so as to be narrower toward the lower portion of the lower main body 130, that is, toward the injection portion 131.

The lower portion of the second chamber 330 communicates with a gas discharge port 331.

The screw 900 is inserted and received in the second chamber 330.

The first gas supply unit 700, the second gas supply unit 800, the first chamber 310, the second chamber 330, and the plurality of spiral flow paths 910 and the gas discharge ports 331 of the spiral part 900 communicate with each other. Therefore, the gas flowing into the first chamber 310 through the first and second gas supply parts 700 and 800 passes through the second chamber 330 and the spiral part 900 and is discharged from the gas discharge port 331.

The first gas supply part 700 functions to communicate with the front of the first chamber 310 to supply gas to the first chamber 310. In this case, the first gas supply part 700 is eccentrically disposed at one side with respect to the central axis of the main body 100.

The second gas supply part 800 functions to communicate with the rear of the first chamber 310 to supply gas to the first chamber 310. In this case, the second gas supply part 800 is eccentrically disposed at the other side with respect to the central axis of the main body 100.

As described above, the second gas supply part 800 is eccentrically disposed at the other side with respect to the central axis of the main body 100 in the rear of the first chamber 310, and thus the second gas supply part 800 forms symmetry with the first gas supply part 700 in a diagonal direction with reference to the central axis of the main body 100.

The first gas supply part 700 is eccentrically disposed at one side with respect to the central axis of the main body 100 and communicates with the front of the first chamber 310, and the second gas supply part 800 is eccentrically disposed at the other side with respect to the central axis of the main body 100 and communicates with the rear of the first chamber 310, so that the gas spirally rotates along the inner wall of the first chamber 310 inside the first chamber 310 when the gas is supplied to the first chamber 310 through the first and second gas supply parts 700 and 800.

In fig. 1 to 7, as an embodiment, the first gas supply part 700 is eccentrically disposed at the right side with respect to the central axis of the main body 100 in front of the first chamber 310 and the second gas supply part 800 is eccentrically disposed at the left side with respect to the central axis of the main body 100 in rear of the first chamber 310, so that when the gas is supplied to the first chamber 310 through the first gas supply part 700 and the second gas supply part 800, as shown in fig. 6, the gas spirally rotates along the inner wall of the first chamber 310 in a clockwise direction inside the first chamber 310 as viewed from the upper portion of the first chamber 310.

A 1 st-1 st guide part 710 is disposed in the first gas supply part 700, the 1 st-1 st guide part 710 connecting a side of an inner wall of the first gas supply part 700 and a side of an inner wall of the first chamber 310 obliquely so that a step is not generated between the side of the inner wall of the first gas supply part 700 and the side of the inner wall of the first chamber 310 communicated.

A 2-1 th guide part 810 is disposed in the second gas supply part 800, and the 2-1 th guide part 810 obliquely connects the other side of the inner wall of the second gas supply part 800 with the other side of the inner wall of the first chamber 310 such that a step is not generated between the other side of the inner wall of the second gas supply part 800 and the other side of the inner wall of the first chamber 310 communicated therewith.

In the illustrated example, the 1 st-1 st guide part 710 obliquely connects the right side of the inner wall of the first gas supply part 700 and the right side of the inner wall of the first chamber 310 such that a step is not generated between the right side of the inner wall of the first gas supply part 700 and the right side of the inner wall of the first chamber 310 in communication. In addition, the 2 nd-1 th guide part 810 obliquely connects the left side of the inner wall of the second gas supply part 800 with the left side of the inner wall of the first chamber 310 so that a step is not generated between the left side of the inner wall of the second gas supply part 800 and the left side of the inner wall of the first chamber 310 that is communicated.

Such a 1 st-1 st guide 710 may be formed in a manner having a curvature, and the curvature may correspond to the shape of the inner wall of the first chamber 310 and be formed in a shape protruding in an outer direction of the first chamber 310. The 2-1 guide 810 may also be formed in a manner of having a curvature, and the curvature may correspond to the shape of the inner wall of the first chamber 310 and be formed in a shape protruding toward the outer side of the first chamber 310.

The 1 st-1 st guide 710 may be formed at least any one of a side (or right side) of an inner wall of the first gas supply part 700 and a side (or right side) of an inner wall of the first chamber 310.

The 2-1 th guide part 810 may be formed at least any one of the other side (or left side) of the inner wall of the second gas supply part 800 and the other side (or left side) of the inner wall of the first chamber 310.

As described above, since the 1 st-1 st and 2 nd-1 st guides 710 and 810 are formed, the gas supplied to the first chamber 310 through the first and second gas supply parts 700 and 800, respectively, can smoothly flow.

To explain in detail, the gas supplied by the first gas supply part 700 flows along one side of the inner wall of the first gas supply part 700 and is guided by the 1 st-1 st guide part 710, and then flows along one side of the inner wall of the first chamber 310. In this case, since a step difference is not generated between one side of the inner wall of the first gas supplying part 700 and one side of the inner wall of the first chamber 310 by the 1 st-1 st guide part 710, the gas is supplied to the inside of the first chamber 310 in a state in which a decrease in flow rate thereof is minimized due to a Coanda effect (Pressure gradient), which is a phenomenon in which the gas flows attached to the inner wall side due to a Pressure gradient. Accordingly, the gas supplied from the first gas supply part 700 may flow into the first chamber 310 in a high-pressure, high-speed state.

The gas supplied by the second gas supply part 800 also flows along one side of the inner wall of the second gas supply part 800 and is guided by the 2 nd-1 th guide part 810, and then flows along one side of the inner wall of the first chamber 310. In this case, since a step difference is not generated between the other side of the inner wall of the second gas supply part 800 and the other side of the inner wall of the first chamber 310 by the 2-1 th guide part 810, the gas is supplied to the inside of the first chamber 310 in a state in which a decrease in flow rate thereof is minimized due to a Coanda effect (Pressure gradient), which is a phenomenon in which the gas flows attached to the inner wall side due to a Pressure gradient. Accordingly, the gas supplied from the second gas supply part 800 may flow into the first chamber 310 in a high-pressure, high-speed state.

The first gas supply part 700 may be provided with a 1 st-2 nd guide part 730 inclined toward one side of the first gas supply part 700 as the first chamber 310 gets closer to the other side of the first gas supply part 700, and the sectional area of the first gas supply part 700 may be formed narrower as the first chamber 310 gets closer to the other side. In this case, the 1 st-2 nd guide part 730 is formed at the other side of the first gas supply part 700.

The 1 st-2 nd guide 730 is formed to be inclined toward one side of the first gas supply part 700 as it gets closer to the first chamber 310.

As shown in fig. 6, in the case where the first gas supply part 700 is eccentric to the right side with respect to the central axis of the main body 100 and communicates with the front of the first chamber 310, the 1 st-2 nd guide part 730 is formed at the left side of the first gas supply part 700 in front of the first chamber 310.

In addition, the 1 st-2 nd guide portion 730 is formed to be inclined in the right direction of the first gas supply portion 700 as approaching the first chamber 310.

As described above, since the 1 st-2 nd guides 730 are disposed in the first gas supply part 700, the sectional area of the first gas supply part 700 becomes narrower as it gets closer to the first chamber 310.

The 1 st-2 nd guide 730 functions to guide the gas supplied through the first gas supply part 700 in one direction, i.e., in a right direction.

Accordingly, the gas supplied from the first gas supply part 700 is guided by the 1 st-2 nd guide part 730, and is guided to flow toward the inner wall of one side direction (or the inner wall of the right side direction) of the first gas supply part 700, and then flows toward the inner wall of one side direction (or the inner wall of the right side direction) of the first chamber 310 through the 1 st-1 st guide part 710.

As described above, the 1 st-2 nd guide portion 730 may be formed at the other side of the first gas supply portion 700, or may be disposed as a part of the inner wall forming the first chamber 310 at the communication section of the first gas supply portion 700 and the first chamber 310.

In addition, the 1 st-2 nd guide 730 may be formed in a manner having a curvature.

The second gas supply part 800 is provided with a 2 nd-2 nd guide part 830 inclined toward the other side of the second gas supply part 800 as the second gas supply part 800 is closer to the first chamber 310 at one side of the second gas supply part 800, and the sectional area of the second gas supply part 800 is formed to be narrower as the second gas supply part is closer to the first chamber 310. In this case, the 2 nd-2 nd guide part 830 is formed at one side of the second gas supply part 800.

The 2 nd-2 nd guide part 830 is formed to be inclined toward the other side of the second gas supply part 800 as it gets closer to the first chamber 310.

As shown in fig. 6, in the case where the second gas supply part 800 is eccentric to the left side with respect to the central axis of the body 100 and communicates with the rear of the first chamber 310, the 2 nd-2 nd guide part 830 is formed at the right side of the second gas supply part 800 at the rear of the first chamber 310.

The 2 nd-2 nd guide part 830 is formed to be inclined toward the left side of the second gas supply part 800 as it approaches the first chamber 310.

As described above, since the 2 nd-2 nd guide 830 is disposed in the second gas supply part 800, the sectional area of the second gas supply part 800 becomes narrower as it approaches the first chamber 310.

The 2 nd-2 nd guide part 830 functions to guide the gas supplied through the second gas supply part 800 in the other side direction, i.e., the left side direction.

Accordingly, the gas supplied from the second gas supply part 800 is guided by the 2 nd-2 nd guide part 830, and is guided to flow toward the inner wall of the other side direction (or the inner wall of the left side direction) of the second gas supply part 800, and then flows toward the inner wall of the other side direction (or the inner wall of the left side direction) of the first chamber 310 through the 2 nd-1 th guide part 810.

As described above, the 2 nd-2 nd guide part 830 may be formed at the other side of the second gas supply part 800, and may be disposed as a part of the inner wall forming the first chamber 310 at the communication section of the second gas supply part 800 and the first chamber 310.

In addition, the 2 nd-2 nd guide 830 may be formed in a manner of having a curvature.

As described above, since the 1 st-2 nd guide 730 is formed at the first gas supply part 700 and the 2 nd-2 nd guide is formed at the second gas supply part 800, the spiral rotation of the gas performed in the first chamber 310 can be more effectively achieved.

In detail, due to the eccentric structures of the first and second gas supply parts 700 and 800, the gas flows along the inner wall of the first chamber 310 to spirally flow in the first chamber 310, the 1 st-2 guide part 730 functions to guide the gas supplied through the first gas supply part 700 to the inner wall of one side direction of the first gas supply part 700 and the inner wall of one side direction of the first chamber 310, and the 2 nd-2 guide part 830 functions to obliquely guide the gas supplied through the second gas supply part 800 to the inner wall of the other side direction of the second gas supply part 800 and the inner wall of the other side direction of the first chamber 310, so that the coanda effect of the gas flowing along the inner walls can be maximized. Therefore, the eccentric structures of the first and second gas supplies 700 and 800 function together to further maximize the spiral rotational flow of the gas inside the first chamber 310.

The liquid supply part 500 has the same central axis as that of the main body 100, is disposed in the second chamber 330, and is provided at the end thereof with a liquid discharge port 510.

The liquid supply part 500 is formed to protrude downward from the flange 111 of the upper body 110, and a spiral part 900 is disposed at an end of the liquid supply part 500.

The central axis of the liquid supply part 500 has the same central axis as the central axis of the main body 100 and the central axis of the two-fluid nozzle for substrate cleaning 10.

The central axis of the liquid supply part 500 has the same central axis as the central axis of the first chamber 310 and the central axis of the second chamber 330. Accordingly, the liquid supply part 500 is disposed along the central axis of the first chamber 310 and the central axis of the second chamber 330. Specifically, the liquid supply part 500 is disposed on the central axis of the first chamber 310 and the central axis of the second chamber 330 and is disposed inside the first chamber 310 and the second chamber 330.

A lower portion of the liquid supply part 500 and the spiral part 900 are disposed in the second chamber 330. In this case, a lower portion of the liquid supply part 500 and the screw 900 are inserted and received in the second chamber 330.

A liquid discharge port 510 is disposed at a lower end of the liquid supply portion 500. Therefore, the liquid supplied from the liquid supply part 500 is discharged through the liquid discharge port 510.

The center points of the liquid discharge ports 510 are arranged in such a manner as to be located on the central axis of the liquid supply part 500. Therefore, the liquid supply part 500 is disposed on the central axis of the first chamber 310 and the central axis of the second chamber 330, and the liquid discharge port 510 is also formed at the lower surface of the two-fluid nozzle 10 for substrate cleaning, that is, the center of the lower surface of the main body 100 (or the lower main body 130).

The gas exhaust port 331 is disposed in communication with the second chamber 330 and surrounds the liquid exhaust port 510.

The gas discharge port 331 is formed as a space between the inner side of the injection part 131 and the outer side end of the liquid supply part 500. Such a gas discharge port 331 has a ring shape. Therefore, the gas discharge port 331 is arranged at the periphery centering on the liquid supply part 500 and has a ring shape to surround the liquid discharge port 510.

The gas discharge port 331 communicates with the first chamber 310 and the second chamber 330 through the plurality of spiral flow paths 910 of the spiral portion 900.

The spiral part 900 is disposed at a lower portion of the liquid supply part 500 so as to be disposed in the second chamber 330, and forms a plurality of spiral flow paths 910 communicating with the gas discharge port 331.

The spiral portion 900 is disposed in the second chamber 330 in such a manner as to communicate with the gas discharge port 331.

The spiral part 900 is formed at a lower portion of the liquid supply part 500, and the spiral part 900 is inserted into and positioned in the second chamber 330 with at least a portion of the liquid supply part 500, i.e., the lower portion of the liquid supply part 500. In other words, the spiral part 900 and the lower portion of the liquid supply part 500 are accommodated in the second chamber 330.

The spiral portion 900 is formed with a plurality of spiral flow paths 910 that communicate the second chamber 330 with the gas discharge port 331.

The spiral direction of the plurality of spiral flow paths 910 is formed in the same direction as the gas supplied to the first chamber 310 through the first and second gas supply parts 700 and 800 spirally rotates in the first and second chambers 310 and 330.

For example, as described above, when the gas spirally rotates in the clockwise direction along the inner wall of the first chamber 310 in the interior of the first chamber 310 as viewed from the upper portion of the first chamber 310, the spiral flow path 910 is formed to be inclined downward in the clockwise direction as shown in fig. 2 so as to spirally rotate in the clockwise direction as viewed from the upper portion of the first chamber 310.

As described above, in order to align the spiral rotation directions of the gases, the spiral directions of the plurality of spiral flow paths 910 are formed to be the same as the eccentric directions of the first and second gas supply parts 700 and 800, and the spiral rotation force of the gases flowing in the first chamber 310 is further increased.

The flow of the gas and the liquid in the two-fluid nozzle 10 for substrate cleaning according to the preferred embodiment of the present invention having the above-described configuration will be described below.

High-pressure gas is supplied to the first gas supply part 700 and the second gas supply part 800 of the two-fluid nozzle 10 for substrate cleaning through the external gas supply parts communicating with the first gas supply part 700 and the second gas supply part 800, respectively.

Thereafter, the high pressure gas flows to the first chamber 310 through the 1 st-1 st guide 710 after flowing inside the first gas supply part 700, and flows to the first chamber 310 through the 2 nd-1 st guide 810 after flowing inside the second gas supply part 800. In this case, the gas supplied through the first gas supply part 700 flows to the front right side of the first chamber 310, and the gas supplied through the second gas supply part 800 flows to the rear left side of the first chamber 310.

The first gas supply part 700 is communicated to the front of the first chamber 310 and is eccentric to the right (one side) with respect to the central axis of the main body 100, and the second gas supply part 800 is communicated to the rear of the first chamber 310 and is eccentric to the left (other side) with respect to the central axis of the main body 100, so that the gas flowing into the first chamber 310 spirally rotates in the clockwise direction and flows in the downward direction with respect to the case of being viewed from the upper portion of the first chamber 310. In other words, the gas spirally flows in a clockwise direction in the interior of the first chamber 310.

As described above, the gas rotates in the clockwise direction inside the first chamber 310 because the first gas supply part 700 and the second gas supply part 800 are arranged in such a manner as to form symmetry in the diagonal direction of the main body 100, and thus the gas supplied through the first gas supply part 700 and the gas supplied through the second gas supply part 800 rotationally flow in the same direction (i.e., the clockwise direction).

The gas flowing in the first chamber 310 fills the first chamber 310 and flows to the upper portion of the first chamber 310. The gas flowing to the upper portion of the first chamber 310 flows to the upper portion of the opening of the second chamber 330 through the interval where the first chamber 310 communicates with the second chamber 330, thereby flowing into the second chamber 330.

The gas flowing into the second chamber 330 flows toward the plurality of spiral flow paths 910 of the spiral 900.

The gas flowing to the plurality of spiral flow paths 910 flows along the plurality of spiral flow paths 910 and is then discharged through the gas discharge port 331. In this case, the gas is further accelerated by the spiral rotation of the plurality of spiral flow paths 910 in the clockwise direction, and then discharged through the gas discharge port 331.

The liquid supplied through the external air supply part flows through the inside of the liquid supply part 500 and is discharged to the outside through the liquid discharge port 510.

The liquid discharged from the liquid discharge port 510 collides with the high-speed, high-pressure gas discharged from the gas discharge port 331 at the lower portion of the injection portion 131, and liquid droplets of the mixture are generated. As described above, the liquid droplets generated at the lower portion of the ejection portion 131 are ejected toward the lower portion. In this case, the droplets of the mixture are converted into fine droplets by collision of the liquid with a high-speed, high-pressure gas, and are ejected in a spray pattern.

The droplets of the mixture sprayed as described above are sprayed onto the upper surface of the wafer located at the lower portion of the two-fluid nozzle for substrate cleaning 10, thereby performing a cleaning process of the wafer.

The two-fluid nozzle 10 for substrate cleaning according to the preferred embodiment of the present invention having the above-described configuration has the following effects.

Due to the configurations of the first chamber 310, the partition wall 135, the second chamber 330, the first gas supply part 700, and the second gas supply part 800, when the gas is supplied to the first chamber 310, the gas is filled in the first chamber 310 due to the partition wall 135, and then flows into the second chamber 330 through the upper portion of the opening of the second chamber 330.

In this case, a pressure difference is generated between the pressure inside the first chamber 310 and the pressure inside the second chamber 330. In other words, in the relationship "pressure inside the first chamber 310 > pressure inside the second chamber 330".

Due to this pressure difference, the flow rate of the gas is accelerated in the communication section of the first chamber 310 and the second chamber 330. That is, the gas flowing from the first chamber 310 into the second chamber 330 is accelerated in the communication section between the first chamber 310 and the second chamber 330, i.e., in the upper portion of the opening of the second chamber 330, and then flows into the second chamber 330.

As described above, since the flow velocity of the gas flowing into the second chamber 330 is increased by acceleration, the pressure and flow velocity of the gas discharged from the gas discharge port 331 are higher than those of the conventional two-fluid nozzle for substrate cleaning under the same conditions, and thus, droplets of a mixture having a higher velocity and fine particles can be generated.

The first and second chambers 310 and 330 are formed by the structure of the partition wall 135, and the discharge pressure can be effectively prevented from being reduced by the supply pressure direction vectors of the first and second gas supply parts 700 and 800.

In detail, in the conventional case, since the individual chambers are not separated, the gas flowing in the discharge port direction, i.e., the lower direction is affected by the supply pressure of the gas supplied from the gas supply unit. Therefore, in the case where the supply pressure of the gas passing through the gas supply portion is increased, there may occur a problem that the discharge pressure of the gas is lowered. However, in the case of the present invention, the gas is supplied to the first chamber 310, filled, flows into the second chamber 330, flows into the plurality of spiral flow paths 910 positioned in the lower direction, and is discharged through the discharge port 331. In this way, the gas flowing toward the exhaust port 331 flows inside the second chamber 330, and therefore the supply pressure of the gas by the first gas supply unit 700 and the second gas supply unit 800 does not affect the flow inside the second chamber 330. Therefore, even if the supply pressure of the gas passing through the first gas supply part 700 and the second gas supply part 800 is increased, the discharge pressure of the gas is not lowered by such an influence.

The first and second gas supply parts 700 and 800 are respectively arranged in a manner of being eccentric to one side and the other side with reference to the central axis of the body 100 in front of and behind the first chamber 310, respectively, and are arranged in a manner of being symmetrical to each other in a diagonal direction, so that when the gas is supplied into the first chamber 310 through the first and second gas supply parts 700 and 800, the gas rotates in a clockwise direction or a counterclockwise direction to perform a spiral rotational flow, and thus, when the gas flows into the first and second chambers 310 and 330, a loss of a flow pressure of the gas can be minimized.

By arranging the 1 st-1 st and 2 nd-1 st guides 710 and 810, the gas can smoothly flow along the inner wall of the first gas supply part 700 and the inner wall of the first chamber 310, and along the inner wall of the second gas supply part 800 and the inner wall of the first chamber 310. Therefore, the gas flows into the first chamber 310 in a high-pressure and high-speed state due to the coanda effect, so that the flow velocity of the gas can be reduced and the loss of the flow pressure can be minimized.

The 1 st-2 nd guide 730 and the 2 nd-2 nd guide 830 are configured to further maximize the spiral rotation and the coanda effect of the gas. In detail, due to the eccentric structures of the first and second gas supply parts 700 and 800, the gas flows along the inner wall of the first chamber 310 to spirally flow inside the first chamber 310, and the 1 st-2 guide part 730 functions to guide the gas supplied through the first gas supply part 700 to the inner wall of one side direction of the first gas supply part 700 and the inner wall of one side direction of the first chamber 310, and the 2 nd-2 guide part 830 functions to guide the gas supplied through the second gas supply part 800 to the inner wall of the other side direction of the second gas supply part 800 and the inner wall of the other side direction of the first chamber 310, thereby maximizing the coanda effect of the gas flowing along the inner walls. Accordingly, the spiral rotational flow of the gas inside the first chamber 310 is further maximized together with the eccentric structures of the first and second gas supplies 700 and 800.

The gas spirally flows along the inner wall of the first chamber 310, so that the flow rate of the gas generated when the gas collides with the liquid supply part 500 is reduced and the loss of the flow pressure is minimized.

The gas flowing to the second chamber 330 flows along the plurality of spiral flow paths 910 of the spiral part 900 and is then discharged through the gas discharge port 331, so that the flow rate of the gas discharged through the gas discharge port 331 can be increased, and thus can collide with the liquid at a high flow rate. Therefore, the velocity of the droplets of the mixture generated by the collision of the liquid and the gas can be maintained at a high velocity and the droplets can be ejected.

Since the gas discharge port 331 is arranged in a manner of surrounding the periphery of the liquid discharge port 510 and has a ring shape, it is possible to maintain a high flow rate due to the spiral rotational flow to be discharged to the outside when discharging the gas.

As described above, in the two-fluid nozzle 10 for substrate cleaning according to the first preferred embodiment of the present invention, the flow of the gas into the first chamber 310 is smoothly performed due to the eccentric structure of the first gas supply part 700 and the second gas supply part 800, etc., and the gas rapidly flows from the first chamber 310 to the second chamber 330 due to the structure of the partition wall 135, and then is discharged from the gas discharge port 331 at a high flow rate by accelerating the spiral rotation by the spiral part 900, so that the flow pressure stabilization and the flow rate increase of the gas discharged from the gas discharge port 331 are realized by the stable flow pressure and flow inside the first chamber 310 and the second chamber 330. Therefore, the gas discharged from the gas discharge port 331 collides with the liquid at a high flow rate, and thereby liquid droplets having a high velocity and fine particles can be generated. As described above, the present invention can generate droplets having fine particles at a higher speed than conventional two-fluid nozzles for cleaning substrates.

Hereinafter, the distribution of the flow pressure of the conventional two-fluid nozzle 1 for substrate cleaning and the distribution of the flow pressure of the two-fluid nozzle 10 for substrate cleaning according to the preferred embodiment of the present invention having the above-described configuration will be described by comparing them with each other with reference to fig. 8a to 9 c.

FIG. 8a is a diagram showing a distribution of flow pressure of gas inside a chamber in a cross-sectional view as viewed from a side of the chamber of the conventional two-fluid nozzle for substrate cleaning, FIG. 8b is a diagram showing a distribution of flow pressure of gas inside the chamber in a cross-sectional view as viewed from an upper portion of the chamber of the conventional two-fluid nozzle for substrate cleaning, FIG. 8c is a diagram showing a distribution of flow pressure of gas inside the chamber in a cross-sectional view as viewed from an upper portion of a spiral portion of the chamber of the conventional two-fluid nozzle for substrate cleaning, FIG. 9a is a diagram showing a distribution of flow pressure of gas inside the first chamber in a cross-sectional view as viewed from a side of the first chamber of the two-fluid nozzle for substrate cleaning according to the preferred embodiment of the present invention, FIG. 9b is a diagram showing a distribution of flow pressure of gas inside the first chamber in a cross-sectional view as viewed from an upper portion of the first chamber of the two-fluid nozzle for substrate cleaning according to the preferred embodiment of the present invention, fig. 9c is a diagram showing the distribution of the flowing pressure of the gas inside the second chamber and the spiral portion in the cross-sectional view seen from the upper portion of the spiral portion of the two-fluid nozzle for substrate cleaning according to the preferred embodiment of the present invention.

As shown in fig. 8a to 8c, in the case of the conventional two-fluid nozzle 1 for substrate cleaning, a separate partition wall is not disposed inside the chamber 5, and the gas supply portion 3 communicates with the chamber 5 so as not to be eccentric with respect to the central axis of the chamber 5.

As described above, since the chamber 5 is not provided with a separate partition wall, the gas flowing into the chamber 5 through the gas supply portion 3 flows downward and is discharged from the gas discharge portion through the spiral flow path 7. In addition, since the gas supply part 3 does not have an eccentric structure, the gas flowing to the chamber 5 through the gas supply part 3 does not generate a constant flowing stream inside the chamber 5.

When viewing fig. 8a to 8c, the pressure of the gas inside the chamber 5 is kept the same throughout the entire section of the chamber 5, and the pressure is kept low only in the vicinity of the spiral flow path 7. Therefore, the gas is accelerated only in the lower fixed section of the chamber 5 where the spiral flow path 7 is located.

As described above, in the case of the two-fluid nozzle 1 for substrate cleaning, since the acceleration of the gas flow velocity is achieved only in the spiral flow path 7 and the area in which such a spiral flow path 7 is arranged is relatively small, the gas cannot achieve a sufficient spiral rotational flow, and therefore, when the gas is discharged from the gas discharge port, the gas cannot have a high discharge velocity.

Further, a difference occurs between the pressure of the gas flowing into the spiral flow path 7 in the lower portion of the region where the gas supply unit 3 is positioned and the pressure of the gas flowing into the spiral flow path 7 in the lower portion of the region opposite to the region where the gas supply unit 3 is positioned. Therefore, as shown in fig. 8c, the pressure of the gas flowing into the spiral flow path 7 unevenly flows.

Since the gas flowing into the spiral flow path 7 is not uniform, the spiral flow path 7 cannot efficiently perform spiral flow, and the gas discharged from the discharge port may not have a sufficient discharge speed.

In this way, in the case of the two-fluid nozzle 1 for substrate cleaning, a separate structure for increasing the flow rate of the gas quickly is not disposed in the chamber 5.

In contrast, in the case of the two-fluid nozzle 10 for substrate cleaning according to the preferred embodiment of the present invention, the flow rate of the gas is increased rapidly in the section where the first chamber 310 communicates with the second chamber 330 due to the partition wall 135.

To explain in detail, according to a preferred embodiment of the present invention, the two-fluid nozzle 10 for substrate cleaning separates the first chamber 310 from the second chamber 330 by the partition wall 135, and thus, the gas fills the inside of the first chamber 310 and then flows to the inside of the second chamber 330 through the opened upper portion of the second chamber 330.

In this case, as shown in fig. 9a to 9c, a relationship of "pressure inside the first chamber 310 > pressure inside the second chamber 330" is satisfied, and thus a pressure difference is generated between the pressure inside the first chamber 310 and the pressure inside the second chamber 330.

The flow rate of the gas in the communication section of the first chamber 310 and the second chamber 330 is accelerated due to the pressure difference as described above. That is, the gas flowing from the first chamber 310 into the second chamber 330 is accelerated at the upper portion of the opening of the second chamber 330, which is the communication section between the first chamber 310 and the second chamber 330, and then flows into the second chamber 330.

Further, the pressure in the section in which the plurality of spiral flow paths 910 are arranged in the lower portion of the second chamber 330 is lower than the pressure in the section in the second chamber 330, that is, the pressure "in the second chamber 330 > the pressure in the section in which the plurality of spiral flow paths 910 enter" is satisfied, and when the gas flows into the plurality of spiral flow paths 910, the flow velocity of the gas is once again accelerated.

As described above, the two-fluid nozzle 10 for substrate cleaning according to the present invention accelerates the flow velocity of the gas in two intervals, thereby allowing the gas to have a higher discharge velocity than in the conventional art.

In addition, the gas spirally flowing in the first chamber 310 through the first gas supply part 700 and the second gas supply part 800 maintains the spiral flow in the same direction even when flowing into the second chamber 330, and the speed of the spiral flow is further increased due to the pressure difference between the first chamber 310 and the second chamber 330. Accordingly, when the gas flows to the plurality of spiral flow paths 910 inside the second chamber 330, such spiral rotational flow may be further accelerated.

In the case of the two-fluid nozzle 10 for cleaning a substrate according to the present invention, since the gas is spirally and rotatably flowed in the first chamber 310 and the second chamber 330 by the first gas supply part 700 and the second gas supply part 800 having the eccentric structure, the pressure of the gas flowing into the spiral flow path 910 is relatively uniformly flowed as shown in fig. 9 c. Accordingly, the spiral rotational flow in the spiral flow path 910 can be more effectively achieved.

As described above, in the two-fluid nozzle for substrate cleaning 10 according to the present invention, since the partition wall 135 is provided to separate the first chamber 310 from the second chamber 330, the flow rate of the gas is accelerated in the communication section between the first chamber 310 and the second chamber 330 and the communication section between the second chamber 330 and the plurality of spiral flow paths 910, that is, in both sections, and thus, the effective spiral flow can be realized in each of the first chamber 310, the second chamber 330, and the plurality of spiral flow paths 910, and thus, the gas can be discharged through the gas discharge port 331 while maintaining a high pressure and high speed state. Therefore, compared to the conventional two-fluid nozzle 1 for cleaning a substrate, a high-pressure and high-speed gas is discharged, and thereby droplets having a mixture of high speed and fine particles can be generated.

Hereinafter, a substrate cleaning two-fluid nozzle 10' according to a modification will be described with reference to fig. 10.

Fig. 10 is a view showing a modification of the two-fluid nozzle for cleaning a substrate according to the present invention.

As shown in fig. 10, a curved surface portion 137' may be disposed at an upper end portion of the partition wall 135' of the two-fluid nozzle 10' for substrate cleaning.

Curved surface portion 137' may be formed to have a curvature, and may be formed to be more concentrated toward the outer side surface and the inner side surface of upper partition wall 135' of partition wall 135 '.

In other words, the curved surface portion 137' may be formed as follows: the upper portion of partition wall 135' is inclined from the outer surface of partition wall 135' toward the inner surface of partition wall 135', or inclined from the inner surface of partition wall 135' toward the outer surface of partition wall 135 '.

This curved surface portion 137' functions as follows when gas flows from the first chamber 310 into the interior of the second chamber 330: the gas is guided to the upper portion of the opening of the second chamber 330, which is the communication region between the first chamber 310 and the second chamber 330, so that the gas smoothly flows into the second chamber 330.

Unlike the case shown in fig. 10, curved surface 137' may be formed to be inclined from the outer surface of partition wall 135' toward the inner surface of partition wall 135' as it goes to the upper portion of partition wall 135', or may be formed to be inclined from the inner surface of partition wall 135' toward the outer surface of partition wall 135' as it goes to the upper portion of partition wall 135 '.

The lower surface of the flange 111 of the upper body 110 of the two-fluid nozzle 10' for substrate cleaning may be provided with a curved groove 113 dug to have a curved surface.

The curved groove 113 may be formed to have a ring shape on the lower surface of the flange 111 corresponding to the position of the curved portion 137'.

The curved groove 113 and the curved portion 137' function together as follows: when the gas flows into the inside of the second chamber 330 from the first chamber 310, the gas is guided in the upper portion of the communication section of the first chamber 310 and the second chamber 330, so that the gas smoothly flows into the inside of the second chamber 330.

As described above, since the curved surface 137' and the curved groove 113 are disposed, the flow of the gas flowing from the first chamber 310 into the second chamber 330 can be smoothly guided, and thus the flow rate of the gas flowing into the second chamber 330 can be maintained high, and the discharge pressure of the gas can be maintained high.

Each of the two-fluid nozzles 10 and 10' for cleaning a substrate of the present invention may be deformed into a form in which the spiral portion 900 is not disposed.

In the case where the spiral part 900 is not disposed, the gas supplied to the upper chamber 310 flows in a spiral rotation, flows into the second chamber 330, and is directly discharged through the gas discharge port 331.

The substrate cleaning two-fluid nozzle without the spiral portion 900 has a relatively low value of the Helicity (Helicity) compared to the substrate cleaning two-fluid nozzles 10, 10' with the spiral portion 900.

In detail, the helicity is defined as the inner product of Vorticity (Vorticity) and Velocity (Velocity). In other words, the helicity "h" is "h ═ ω · V". In this case, "ω" is vorticity, and vorticity is defined as the rotation of the flow velocity. That is to say that the first and second electrodes,

is a rotation vector.

According to the definition of the helicity as described above, when there is almost no difference in magnitude between the vorticity and the speed, the magnitude of the helicity is determined by the magnitude of the angle between the vorticity and the speed direction.

In the case of the substrate cleaning two-fluid nozzle 10, 10' in which the spiral portion 900 is disposed, the gas flows through the spiral portion 900 and is then discharged from the gas discharge port 331, and therefore, the directions of the vorticity and the velocity become nearly horizontal, and the magnitude of the vorticity is large.

As the magnitude of the helicity increases, the ejection angle of the liquid droplets discharged from the two-fluid nozzle for substrate cleaning 10, 10' also has a large value.

On the contrary, in the case of the substrate cleaning two-fluid nozzle without the spiral part 900, since the gas of the first chamber 310 directly flows to the second chamber 330 and is discharged through the gas discharge port 331 without the spiral part 900, the direction of the vorticity and the speed becomes close to perpendicular, and thus the magnitude of the vorticity is small.

As the magnitude of the swirl becomes smaller, the ejection angle of the liquid droplets ejected from the substrate cleaning two-fluid nozzle not provided with the swirl portion 900 also has a small value.

Therefore, compared to the case where the spiral part 900 is disposed, the two-fluid nozzle for substrate cleaning in which the spiral part 900 is not disposed has the following characteristics: the ejection angle of the discharged liquid droplets is formed relatively small, and the density of the liquid droplets is also high.

As described above, although the present invention has been described with reference to the preferred embodiments, those skilled in the relevant art can make various modifications or changes to the present invention without departing from the spirit and scope of the present invention as set forth in the appended claims.

[ description of symbols ]

10: two-fluid nozzle for cleaning substrate

100: main body

110: upper body

111: flange

130: lower body

131: injection part

133: hole(s)

135: partition wall

310: the first chamber

330: second chamber

331: gas discharge port

500: liquid supply part

510: liquid discharge port

700: a first gas supply part

710: 1 st-1 st guide part

730: 1 st-2 nd guide part

800: a second gas supply part

810: 2 nd-1 th guide part

830: 2 nd-2 nd guide part

900: screw part

910: a spiral flow path.

Claims (11)

1. A two-fluid nozzle for cleaning a substrate, comprising:

a main body provided with a first chamber in which gas flows and a second chamber communicating with the first chamber;

a first gas supply portion communicating with the first chamber to supply gas to the first chamber;

a liquid supply portion having the same central axis as that of the main body, at least a portion of which is disposed within the second chamber, and a liquid discharge port disposed at an end of the liquid supply portion; and

a gas discharge port in communication with the second chamber,

the second chamber is formed inside the first chamber by a partition wall disposed inside the first chamber, and an upper portion of an opening of the second chamber communicates with the first chamber.

2. The two-fluid nozzle for cleaning a substrate according to claim 1,

an upper portion of the opening of the second chamber is located at an upper portion than the first gas supply portion.

3. The two-fluid nozzle for cleaning a substrate according to claim 1,

the central axis of the first chamber and the central axis of the second chamber are identical to each other.

4. The two-fluid nozzle for cleaning a substrate according to claim 1,

the first gas supply portion is eccentrically disposed at one side with respect to a central axis of the main body.

5. The dual fluid nozzle for cleaning a substrate of claim 4, further comprising:

a spiral part disposed at a lower portion of the liquid supply part in such a manner as to be disposed within the second chamber, and formed with a plurality of spiral flow paths communicating with the gas discharge port,

the spiral direction of the plurality of spiral flow paths is formed in the same direction as the direction in which the gas supplied to the first chamber through the first gas supply portion spirally rotates within the first chamber.

6. The two-fluid nozzle for cleaning a substrate according to claim 1,

a 1 st-1 st guide part is provided, the 1 st-1 st guide part connecting a side of an inner wall of the first gas supply part and a side of an inner wall of the first chamber obliquely so that a step is not generated between the side of the inner wall of the first gas supply part and the side of the inner wall of the first chamber communicated.

7. The two-fluid nozzle for cleaning a substrate according to claim 6,

the 1 st-1 st guide part has a curvature.

8. The two-fluid nozzle for cleaning a substrate according to claim 1,

the gas discharge port is arranged in a manner of surrounding the liquid discharge port, and has a ring shape.

9. The two-fluid nozzle for cleaning a substrate according to claim 1,

the first gas supply part is provided with a 1 st-2 nd guide part inclined to one side direction of the first gas supply part, and the cross-sectional area of the first gas supply part is narrower as the first chamber is closer.

10. The dual fluid nozzle for cleaning a substrate of claim 4, further comprising:

and a second gas supply portion eccentric to the other side with respect to a central axis of the body and communicating with the first chamber.

11. The two-fluid nozzle for cleaning a substrate of claim 10,

the first gas supply part is provided with a 1 st-2 nd guide part inclined towards one side direction of the first gas supply part, and the cross section area of the first gas supply part is narrower as the first chamber is closer,

the second gas supply part is provided with a 2 nd-2 nd guide part inclined towards the other side direction of the second gas supply part, and the cross section area of the second gas supply part is narrower as the second gas supply part is closer to the first chamber.

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