CN113376403B - MEMS accelerometer detection module with redundancy function and manufacturing method thereof - Google Patents
MEMS accelerometer detection module with redundancy function and manufacturing method thereof Download PDFInfo
- Publication number
- CN113376403B CN113376403B CN202110518255.7A CN202110518255A CN113376403B CN 113376403 B CN113376403 B CN 113376403B CN 202110518255 A CN202110518255 A CN 202110518255A CN 113376403 B CN113376403 B CN 113376403B
- Authority
- CN
- China
- Prior art keywords
- layer
- circuit board
- gasket
- chip
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000001514 detection method Methods 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 35
- 229910052751 metal Inorganic materials 0.000 claims abstract description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 62
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 39
- 229920005591 polysilicon Polymers 0.000 claims description 33
- 235000012239 silicon dioxide Nutrition 0.000 claims description 31
- 239000000377 silicon dioxide Substances 0.000 claims description 31
- 239000000919 ceramic Substances 0.000 claims description 27
- 125000006850 spacer group Chemical group 0.000 claims description 19
- 238000006073 displacement reaction Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 239000000565 sealant Substances 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 238000003466 welding Methods 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 43
- 238000010586 diagram Methods 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000004382 potting Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000004100 electronic packaging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P1/00—Details of instruments
- G01P1/02—Housings
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Pressure Sensors (AREA)
Abstract
The invention discloses an MEMS accelerometer detection module with a redundancy function and a manufacturing method thereof, wherein the module comprises a circuit board, four positioning holes, a metal base, four positioning columns, three fixing blocks, a gasket, an MEMS chip, an ASIC chip, a power management chip and a cover plate; wherein, four corners of the metal base are respectively provided with a positioning column; positioning holes corresponding to the positioning columns are formed in the four corners of the circuit board, and the circuit board is sleeved on the positioning columns corresponding to the positioning holes through the positioning holes; three fixed blocks are arranged on one diagonal line of the circuit board; a gasket is arranged on the upper surface of each fixed block, an MEMS chip is arranged on the upper surface of each gasket, and an ASIC chip is arranged on the upper surface of each MEMS chip; the power management chip is arranged on the circuit board; the cover plate is connected with the top of the metal base. The invention improves the reliability of single-channel detection, isolates the stress from the metal shell and provides a uniform temperature environment.
Description
Technical Field
The invention belongs to the technical field of packaging of MEMS chips, and particularly relates to an MEMS accelerometer detection module with a redundancy function and a manufacturing method thereof.
Background
MEMS sensors have been widely used in many fields such as national defense, inertial navigation, seismic exploration, industry, medical treatment, automation, and consumer electronics due to their characteristics of low cost, small size, low power consumption, and mass production.
Generally, the reliability of the inertial device is much smaller than that of the electronic device, and the inertial device itself becomes a weak link for improving the reliability of the system by the aid of a severe coefficient of a very different ratio. Efforts to improve the reliability of the inertial device itself, as well as the entire inertial assembly, are critical to improving system reliability.
Electronic packaging is the interconnection of one or more electronic component chips, which are then packaged in a protective structure for the purpose of providing electrical connection, mechanical protection, chemical corrosion protection, etc. to the electronic chip.
The redundancy technology is to add redundant equipment to ensure that the system works more reliably and safely. When the parallel redundancy system works, all the redundancy units work simultaneously and provide the same output, and the redundancy system fails only when all the redundancy units fail.
Disclosure of Invention
The technical problem solved by the invention is as follows: the defects of the prior art are overcome, the MEMS accelerometer detection module with the redundancy function and the manufacturing method thereof are provided, the reliability of single-channel detection is improved, the stress from a metal shell is isolated, and a uniform temperature environment is provided.
The purpose of the invention is realized by the following technical scheme: a MEMS accelerometer detection module with redundant functionality, comprising: the positioning structure comprises a circuit board, four positioning holes, a metal base, four positioning columns, three fixing blocks, a gasket, an MEMS chip, an ASIC chip, a power management chip and a cover plate; positioning columns are respectively arranged at four corners of the metal base; positioning holes corresponding to the positioning columns are formed in the four corners of the circuit board, and the circuit board is sleeved on the positioning columns corresponding to the positioning holes through the positioning holes; three fixed blocks are arranged on one diagonal line of the circuit board, wherein the three fixed blocks are uniformly distributed along the length of the diagonal line; a gasket is arranged on the upper surface of each fixed block, an MEMS chip is arranged on the upper surface of each gasket, and an ASIC chip is arranged on the upper surface of each MEMS chip; the power management chip is arranged on the circuit board; the cover plate is connected with the top of the metal base.
In the MEMS accelerometer detection module with redundancy function, the spacers include ceramic spacers and polysilicon spacers; the ceramic gasket is arranged on the upper surface of the fixing block, and the polycrystalline silicon gasket is arranged on the upper surface of the ceramic gasket.
In the MEMS accelerometer detection module with the redundancy function, the circuit board is a ceramic substrate or a PCB printed board, and the thickness of the circuit board is 1 mm-2 mm.
In the MEMS accelerometer detection module with the redundancy function, the fixed block is a square block, and the thickness of the fixed block is 1-2 mm.
In the MEMS accelerometer detection module with the redundancy function, the ceramic gasket is made of alumina ceramic, and the thickness of the ceramic gasket is 500-1000 um.
In the MEMS accelerometer detection module with redundancy function, the polysilicon spacer includes a polysilicon layer, an upper layer of silicon dioxide and a lower layer of silicon dioxide; wherein, the upper layer silicon dioxide, the polysilicon layer and the lower layer silicon dioxide are connected in sequence.
In the MEMS accelerometer detection module with the redundancy function, the thickness of the upper layer of silicon dioxide is 50 nm-100 nm; the thickness of the polycrystalline silicon layer is 300-500 um; the thickness of the lower layer silicon dioxide is 50 nm-100 nm.
A method for manufacturing a MEMS accelerometer detection module with a redundancy function comprises the following steps: the method comprises the following steps: positioning holes are formed in four corners of the circuit board, positioning columns are arranged on the four corners of the metal base respectively, the circuit board is sleeved on the positioning columns corresponding to the positioning holes through the positioning holes, and fixing blocks which are distributed in parallel on diagonal lines are manufactured on the circuit board; step two: mounting a ceramic gasket on the fixed block, then mounting a polysilicon gasket, mounting an MEMS chip on the polysilicon gasket, mounting an ASIC chip on the MEMS chip, and completing the electrical connection between the MEMS chip and the ASIC chip and between the ASIC chip and the circuit board in a gold wire bonding mode; step three: attaching a power management chip on the circuit board to provide 3.3-5V power supply for the ASIC chip, and pouring a pouring sealant into the metal base; step four: the cover plate is fixed on the top of the metal base, and the metal base and the cover plate are sealed by using parallel seam welding, so that a sealed cavity is formed by the metal base and the cover plate.
In the manufacturing method of the MEMS accelerometer detection module with the redundancy function, the ceramic gasket is made of alumina ceramic and has the thickness of 500-1000 um.
In the above method for manufacturing the MEMS accelerometer detection module with redundancy function, the polysilicon spacer includes a polysilicon layer, an upper layer of silicon dioxide and a lower layer of silicon dioxide; wherein, the upper layer silicon dioxide, the polysilicon layer and the lower layer silicon dioxide are connected in sequence; the thickness of the upper layer silicon dioxide is 50 nm-100 nm; the thickness of the polycrystalline silicon layer is 300-500 um; the thickness of the lower layer silicon dioxide is 50 nm-100 nm.
Compared with the prior art, the invention has the following beneficial effects:
(1) The invention utilizes the multilayer gasket to avoid the problem that the temperature characteristic of the MEMS device is seriously influenced by the stress generated by temperature change due to different thermal expansion coefficients among layers of the MEMS chip;
(2) By using the packaging method, the protection of the chip can be improved, and the problem of interference of the external environment on the detection signal can be reduced;
(3) By utilizing the parallel redundancy detection in the invention, the reliability of the detection module can be effectively improved.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
fig. 1 is a schematic structural diagram of a circuit board according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a chip mounting provided in an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a mounted chip according to an embodiment of the present invention;
FIG. 4 is a schematic view of a mounting block, a ceramic spacer and a polysilicon spacer provided in accordance with an embodiment of the present invention;
FIG. 5 is a block diagram of the reliability of the parallel redundancy of the MEMS accelerometer provided by the embodiment of the invention;
FIG. 6 is a graphical illustration of the time and reliability provided by an embodiment of the present invention.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art. It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict. The present invention will be described in detail below with reference to the embodiments with reference to the attached drawings.
Fig. 1 is a schematic structural diagram of a circuit board provided in an embodiment of the present invention; fig. 2 is a schematic structural diagram of a chip mounting provided in an embodiment of the present invention; fig. 3 is a schematic structural diagram of the mounted chip according to the embodiment of the present invention. As shown in fig. 1 to 3, the MEMS accelerometer detection module with redundancy function includes: the circuit board 111, four positioning holes 112, a metal base 113, four positioning columns 114, three fixing blocks 115, a gasket, an MEMS chip 213, an ASIC chip 214, a power management chip 215 and a cover plate. Wherein,
The spacers include a ceramic spacer 211 and a polysilicon spacer 212; the ceramic pad 211 is disposed on the upper surface of the fixing block 115, and the polysilicon pad 212 is disposed on the upper surface of the ceramic pad 211.
The circuit board 111 is a ceramic substrate or a PCB printed board, and has a thickness of 1mm to 2mm. The fixing block 115 is a square block with a thickness of 1mm to 2mm.
The ceramic gasket 211 is made of alumina ceramic and has a thickness of 500-1000 um.
The polysilicon spacer 212 includes a polysilicon layer, an upper silicon dioxide layer and a lower silicon dioxide layer; wherein, the upper layer silicon dioxide, the polysilicon layer and the lower layer silicon dioxide are connected in sequence. The thickness of the upper layer silicon dioxide is 50 nm-100 nm; the thickness of the polycrystalline silicon layer is 300-500 um; the thickness of the lower layer silicon dioxide is 50 nm-100 nm.
When external acceleration acts on the accelerometer, the sensitive mass block of the accelerometer can generate displacement in a sensitive direction under the action of acceleration inertia force, the displacement in the sensitive direction can cause differential change of corresponding detection capacitance, and the magnitude of the acceleration value in the direction can be reflected by detecting the change of the tiny capacitance. The failure rates of the components of the detection module are shown in the following table.
Component failure rate
If the working time t =1000h, the working reliability R of the non-redundant MEMS accelerometer is:
if three MEMS accelerometers are employed for parallel redundancy, the reliability diagram is shown in FIG. 5.
Reliability n lambda of MEMS accelerometer when redundant unit i =5.08024, and when the operating time t =1000h, the reliability R of the parallel redundancy circuit is:
the reliability of simple parallel and non-redundant MEMS accelerometers was compared over time over a longer time frame, with time on the abscissa and reliability on the ordinate in fig. 6.
As shown in fig. 4, a precisely controlled stress balance distribution is formed among the fixed block, the ceramic spacer and the polysilicon spacer, and the constraint relationship is as follows:
wherein,
is the displacement strain in the interface at the upper end of the ith layer,
is the displacement strain in the lower end interface of the i-th layer, alpha i Is the coefficient of thermal expansion of the ith layer,λ i is the axial compliance coefficient of the ith layer,. DELTA.t is the temperature variation, F i Is the normal stress of the i-th layer, h i Is the thickness of the ith layer, ρ is the radius of curvature, ν i Poisson's ratio of i-th layer, E i The young's modulus of the i-th layer. i =1, 2, 3, 4, 5.h is 3 Is the thickness of the adhesive layer between the ceramic pad 211 and the polysilicon pad 212, h 5 Is the thickness of the adhesive layer between the MEMS chip 213 and the polysilicon spacer 212.
The constraint relation formula ensures that the stress influence between the gasket interfaces is small.
The embodiment also provides a MEMS accelerometer detection module with a redundancy function, and the method includes the following steps:
(1) Positioning holes 112 are formed in four corners of the circuit board 111, correspond to the positioning columns 114 of the metal base 113, and are fixed on the metal base 113 in an adhesive manner, and 3 fixing blocks 115 which are distributed in parallel on diagonal lines are formed on the circuit board 111 and are used for positioning and mounting chips;
(2) A chip mounting mode, wherein a gasket is mounted on the circuit board fixing block 115, an MEMS chip 213 is mounted on the gasket, an ASIC chip 214 is mounted on the MEMS chip 213, and the MEMS chip and the ASIC chip and the circuit board are electrically connected in a gold wire bonding mode, so that 3 groups of stacked chips are obtained on 3 fixing blocks;
(3) Attaching the power management chip 215 to the circuit board 111, and pouring a pouring sealant into the metal base 113;
(4) Finally, the cover plate is fixed on the top of the metal base 113, so that the base and the cover plate jointly enclose a sealed cavity, and thus, the packaging of the MEMS detection module is completed.
In the step (1), the circuit 111 board is a ceramic substrate or a PCB printed board, and has a thickness of 1mm to 2mm. The fixed block is a square block which is 1-2 mm higher than the circuit board.
In the step (2), the gasket is divided into an upper layer and a lower layer, the middle layer is bonded by glue, the upper layer is made of polysilicon 212 and has the thickness of 300-500 um, and silicon dioxide grows on the upper surface and the lower surface and has the thickness of 50-100 nm; the lower layer material is alumina ceramic 211 with the thickness of 500 um-1000 um. The gasket, the MEMS chip and the ASIC chip are overlapped and sequentially glued and stacked upwards as centers. 3 groups of chips are placed in parallel, the same input signals are independently detected, and the output signals are in parallel redundancy relation.
In the step (3), the potting is polyurethane potting adhesive.
In step (4), the cover plate is fixed to be sealed by parallel seam welding.
Specifically, (1) the thickness of the circuit board 111 is 1 mm-2 mm, the four corners are provided with positioning holes 112, as shown in fig. 1, the diameter of the positioning hole 112 is 2 mm-3 mm, and the positioning hole corresponds to the positioning column 114 of the metal base 113, and is fixed on the metal base by adopting an adhesive manner, 3 fixing blocks 115 which are distributed in parallel on the diagonal line are manufactured on the circuit board, the fixing blocks 115 are square, the size is 5mm × 5mm, the thickness is 1 mm-2 mm higher than that of the circuit board, and the fixing blocks are used for positioning chip mounting;
(2) A chip mounting manner, as shown in fig. 2 and 3, mounting a ceramic gasket 211 on a circuit board fixing block 115, then mounting a polysilicon gasket 212, mounting an MEMS chip 213 on the polysilicon gasket 212, mounting an ASIC chip 214 on the MEMS chip 213, and completing electrical connection between the MEMS chip and the ASIC chip and between the ASIC chip and the circuit board by gold wire bonding, so that 3 groups of stacked chips are obtained on 3 fixing blocks, and all the mounting is in central symmetrical distribution;
3) Attaching the power management chip 215 to the circuit board 111 to provide 3.3-5V power for the ASIC chip 214, and pouring a pouring sealant into the metal base 113;
4) And finally, fixing the cover plate on the top of the metal base 113, and sealing by using parallel seam welding to ensure that the base and the cover plate jointly enclose a sealed cavity, so that the packaging of the MEMS detection module is completed.
In the embodiment, a circuit board is fixed on a metal base in an adhesive manner, the circuit board is provided with 3 fixed blocks which are positioned on a main diagonal line and distributed in parallel, 2 layers of gaskets are pasted on the fixed blocks of the circuit board, an MEMS chip is pasted on the gaskets, an ASIC chip is pasted on the MEMS chip, and the MEMS chip and the ASIC chip are electrically connected with each other and the circuit board in a gold wire bonding manner, so that 3 groups of stacked chips are obtained on the 3 fixed blocks; pouring a pouring sealant into the metal base; and finally, fixing the cover plate on the top of the metal base, so that the base and the cover plate jointly enclose a sealed cavity. This improves the reliability of single channel detection, isolates stress from the metal housing, and also provides a uniform temperature environment.
The invention can effectively improve the reliability of the detection module, improve the protection of the chip and reduce the interference of the external environment to the detection signal. The multilayer gasket avoids the problem that the temperature characteristic of the MEMS device is seriously influenced by the stress generated by temperature change due to different thermal expansion coefficients among layers of the MEMS chip.
Although the present invention has been described with reference to the preferred embodiments, it is not intended to limit the present invention, and those skilled in the art can make possible variations and modifications of the present invention using the method and the technical contents disclosed above without departing from the spirit and scope of the present invention, and therefore, any simple modifications, equivalent changes and modifications made to the above embodiments according to the technical essence of the present invention are all within the scope of the present invention.
Claims (2)
1. A MEMS accelerometer detection module with redundancy function, comprising: the circuit board comprises a circuit board (111), four positioning holes (112), a metal base (113), four positioning columns (114), three fixing blocks (115), a gasket, an MEMS chip (213), an ASIC chip (214), a power management chip (215) and a cover plate; wherein,
positioning columns (114) are respectively arranged at four corners of the metal base (113);
positioning holes (112) corresponding to the positioning columns (114) are formed in four corners of the circuit board (111), and the circuit board (111) is sleeved on the positioning columns (114) corresponding to the positioning holes (112) through the positioning holes (112);
three fixed blocks (115) are arranged on one diagonal of the circuit board (111), wherein the three fixed blocks (115) are uniformly distributed along the length of the diagonal;
a gasket is arranged on the upper surface of each fixed block (115), an MEMS chip (213) is arranged on the upper surface of each gasket, and an ASIC chip (214) is arranged on the upper surface of each MEMS chip (213);
the power management chip (215) is arranged on the circuit board (111);
the cover plate is connected with the top of the metal base (113);
the spacers comprise a ceramic spacer (211) and a polysilicon spacer (212); the ceramic gasket (211) is arranged on the upper surface of the fixed block (115), and the polysilicon gasket (212) is arranged on the upper surface of the ceramic gasket (211); wherein,
a precisely controllable stress balance distribution is formed among the fixed block, the ceramic gasket and the polysilicon gasket, and the constraint relationship is as follows:
F 1 ＝F 2 ；F 3 +F 4 +F 5 ＝0
wherein,
is the displacement strain in the interface at the upper end of the ith layer,
is the displacement strain in the lower end interface of the i-th layer, alpha i Is the coefficient of thermal expansion of the i-th layer, λ i Is the axial compliance coefficient of the ith layer,. DELTA.t is the temperature variation, F i Is the normal stress of the i-th layer, h i Is the thickness of the ith layer, p is the radius of curvature, v i Poisson's ratio of i-th layer, E i Is the young's modulus of the ith layer, i =1, 2, 3, 4, 5;
the circuit board (111) is a ceramic substrate or a PCB printed board, and the thickness of the circuit board is 1-2 mm;
the fixed block (115) is a square block, and the thickness of the fixed block is 1-2 mm;
the ceramic gasket (211) is made of alumina ceramic and has the thickness of 500-1000 um;
the polysilicon spacer (212) comprises a polysilicon layer, an upper layer of silicon dioxide and a lower layer of silicon dioxide; wherein, the upper layer silicon dioxide, the polysilicon layer and the lower layer silicon dioxide are connected in sequence;
the thickness of the upper layer silicon dioxide is 50 nm-100 nm; the thickness of the polycrystalline silicon layer is 300-500 um; the thickness of the lower layer silicon dioxide is 50 nm-100 nm.
2. A method for manufacturing a MEMS accelerometer detection module with a redundancy function is characterized by comprising the following steps:
the method comprises the following steps: positioning holes (112) are formed in four corners of the circuit board (111), positioning columns (114) are respectively arranged on the four corners of the metal base (113), the circuit board (111) is sleeved on the positioning column (114) corresponding to each positioning hole (112) through the positioning holes (112), and 3 fixing blocks (115) which are distributed in parallel on a diagonal line are manufactured on the circuit board (111);
step two: a ceramic gasket (211) is mounted on the fixed block (115), a polysilicon gasket (212) is mounted, an MEMS chip (213) is mounted on the polysilicon gasket (212), an ASIC chip (214) is mounted on the MEMS chip (213), and the MEMS chip and the ASIC chip and the circuit board are electrically connected in a gold wire bonding mode;
step three: the power management chip (215) is attached to the circuit board (111) to provide 3.3-5V power supply for the ASIC chip (214), and pouring sealant into the metal base (113);
step four: fixing a cover plate on the top of the metal base (113), and sealing by using parallel seam welding to ensure that the metal base (113) and the cover plate jointly enclose a sealed cavity; wherein,
a precisely controllable stress balance distribution is formed among the fixed block, the ceramic gasket and the polysilicon gasket, and the constraint relationship is as follows:
F 1 ＝F 2 ；F 3 +F 4 +F 5 ＝0
wherein,
is the displacement strain in the interface at the upper end of the ith layer,
is the displacement strain in the lower end interface of the i-th layer, alpha i Is the coefficient of thermal expansion of the i-th layer, λ i Is the axial compliance coefficient of the ith layer,. DELTA.t is the temperature variation, F i Normal stress of the ith layer, h i Is the thickness of the ith layer, ρ is the radius of curvature, ν i Poisson's ratio of i-th layer, E i Is the young's modulus of the ith layer, i =1, 2, 3, 4, 5;
the ceramic gasket (211) is made of alumina ceramic and has the thickness of 500-1000 um;
the polysilicon spacer (212) comprises a polysilicon layer, an upper layer of silicon dioxide and a lower layer of silicon dioxide; wherein, the upper layer silicon dioxide, the polysilicon layer and the lower layer silicon dioxide are connected in sequence; the thickness of the upper layer silicon dioxide is 50 nm-100 nm; the thickness of the polycrystalline silicon layer is 300-500 um; the thickness of the lower layer silicon dioxide is 50 nm-100 nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110518255.7A CN113376403B (en) | 2021-05-12 | 2021-05-12 | MEMS accelerometer detection module with redundancy function and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110518255.7A CN113376403B (en) | 2021-05-12 | 2021-05-12 | MEMS accelerometer detection module with redundancy function and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113376403A CN113376403A (en) | 2021-09-10 |
| CN113376403B true CN113376403B (en) | 2023-02-28 |
Family
ID=77572584
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110518255.7A Active CN113376403B (en) | 2021-05-12 | 2021-05-12 | MEMS accelerometer detection module with redundancy function and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113376403B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7723815B1 (en) * | 2004-07-09 | 2010-05-25 | Raytheon Company | Wafer bonded composite structure for thermally matching a readout circuit (ROIC) and an infrared detector chip both during and after hybridization |
| CN104229730A (en) * | 2013-06-20 | 2014-12-24 | 霍尼韦尔国际公司 | Packaging method for mems devices |
| CN105668501A (en) * | 2016-01-28 | 2016-06-15 | 安徽北方芯动联科微系统技术有限公司 | Chip scale packaged MEMS (Micro-Electro-Mechanical Systems) chip with multifunctional cover board and manufacturing method of chip scale packaged MEMS chip with multifunctional cover board |
| CN108622847A (en) * | 2018-05-03 | 2018-10-09 | 河北美泰电子科技有限公司 | The encapsulating method and structure of MEMS sensor |
| CN212910206U (en) * | 2020-09-14 | 2021-04-06 | 新华海通(厦门)信息科技有限公司 | Printed circuit board with packaging structure |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6884645B2 (en) * | 2003-04-18 | 2005-04-26 | Raytheon Company | Method for preparing a device structure having a wafer structure deposited on a composite substrate having a matched coefficient of thermal expansion |
-
2021
- 2021-05-12 CN CN202110518255.7A patent/CN113376403B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7723815B1 (en) * | 2004-07-09 | 2010-05-25 | Raytheon Company | Wafer bonded composite structure for thermally matching a readout circuit (ROIC) and an infrared detector chip both during and after hybridization |
| CN104229730A (en) * | 2013-06-20 | 2014-12-24 | 霍尼韦尔国际公司 | Packaging method for mems devices |
| CN105668501A (en) * | 2016-01-28 | 2016-06-15 | 安徽北方芯动联科微系统技术有限公司 | Chip scale packaged MEMS (Micro-Electro-Mechanical Systems) chip with multifunctional cover board and manufacturing method of chip scale packaged MEMS chip with multifunctional cover board |
| CN108622847A (en) * | 2018-05-03 | 2018-10-09 | 河北美泰电子科技有限公司 | The encapsulating method and structure of MEMS sensor |
| CN212910206U (en) * | 2020-09-14 | 2021-04-06 | 新华海通(厦门)信息科技有限公司 | Printed circuit board with packaging structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113376403A (en) | 2021-09-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3208512B2 (en) | Pressure sensor having a substrate composed of a plurality of laminates and method for manufacturing the same | |
| US6272928B1 (en) | Hermetically sealed absolute and differential pressure transducer | |
| KR101975131B1 (en) | Mems pressure sensor and mems inertial sensor integration structure | |
| US8322225B2 (en) | Sensor package assembly having an unconstrained sense die | |
| US8276460B2 (en) | Packaging for chip-on-board pressure sensor | |
| US8704318B2 (en) | Encapsulation structure for silicon pressure sensor | |
| US8127617B2 (en) | Pressure sensor, manufacturing method thereof, and electronic component provided therewith | |
| CN108117036A (en) | More equipment transducer modules, the electronic device including transducer module and the method for manufacturing transducer module | |
| US5604363A (en) | Semiconductor pressure sensor with package | |
| JP2005538551A (en) | Microchip having stress relief means | |
| EP2426083A2 (en) | Mems sensor package | |
| EP2617677B1 (en) | Structure for isolating a microstructure die from packaging stress | |
| CN113376403B (en) | MEMS accelerometer detection module with redundancy function and manufacturing method thereof | |
| JP2005127750A (en) | Semiconductor sensor and its manufacturing method | |
| WO2012002233A1 (en) | Method of producing sensor device and sensor device | |
| JP2010085143A (en) | Acceleration sensor | |
| US6543292B1 (en) | Piezoresistive air pressure sensor | |
| JP2008070312A (en) | Multi-range acceleration sensor | |
| CN216925891U (en) | Waterproof barometer | |
| JP4706634B2 (en) | Semiconductor sensor and manufacturing method thereof | |
| CN220766507U (en) | Electronic equipment | |
| CN221370643U (en) | Stress isolation packaging structure of MEMS device | |
| CN216246925U (en) | MEMS pressure sensor chip capable of reducing output drift | |
| CN219369005U (en) | Capacitive pressure sensor | |
| JP2010071817A (en) | Semiconductor sensor built-in package |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |