CN113375494A - Negative differential thermal conductance device based on interface thermal resistance effect, device and application - Google Patents
Negative differential thermal conductance device based on interface thermal resistance effect, device and application Download PDFInfo
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- CN113375494A CN113375494A CN202010159210.0A CN202010159210A CN113375494A CN 113375494 A CN113375494 A CN 113375494A CN 202010159210 A CN202010159210 A CN 202010159210A CN 113375494 A CN113375494 A CN 113375494A
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28D—HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT
- F28D21/00—Heat-exchange apparatus not covered by any of the groups F28D1/00 - F28D20/00
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a negative differential thermal conductance device based on interface thermal resistance effect, a negative differential thermal conductance device and application thereof, wherein the negative differential thermal conductance device comprises: the heating end, the heated end which is separated from the heating end and the homojunction/heterojunction structure which is arranged between the heating end and the heated end and is formed by two sections of materials which are tightly attached, wherein the homojunction/heterojunction has a negative effective thermal expansion coefficient in the working temperature range of the negative differential thermal conductivity device. The negative differential thermal conduction device can realize that the heat flow increases along with the external temperature difference rather than monotonously in a working temperature interval, namely, the heat flow has a maximum value, can be used for realizing a thermal switch, a specific temperature radiator, a thermal triode and the like, in a heat transport path to be regulated and controlled, only by forming a simple homojunction/heterojunction structure, the dependence characteristic of the thermal device on the temperature is utilized, the heat flow control with the temperature dependence characteristic is realized, an external temperature detection and control device is not needed, a thermal control system is simplified, and the accuracy and the timeliness of the thermal control system are enhanced.
Description
Technical Field
The invention belongs to the technical field of thermal devices, and particularly relates to a negative differential thermal conductance device based on an interface thermal resistance effect, a negative differential thermal conductance device and application.
Background
The negative differential thermal conductance effect is a nonlinear thermal transport effect in which the heat flow through the device or apparatus does not increase or decrease when the temperature difference applied across the device or apparatus increases. In the development process of thermal devices, the negative differential thermal conduction effect is considered as an important method for constructing thermal triodes and thermal logic devices, and the functions of switching on and off, amplifying, logic operation and the like of heat flow can be realized. Therefore, the negative differential thermal conductivity effect has been receiving much attention.
Many electrical devices with negative differential resistance have been designed in the prior art, but thermal devices with negative differential resistance have not been realized. Most current thermal control takes the form of indirect temperature feedback: temperature information is collected by the thermocouple and transmitted to the controller, and then the heat transportation process is adjusted by the controller. The whole process needs a complete closed-loop control system, the whole use condition of the thermal device is limited by the sum of all parts, and therefore the working stability is not strong, and many special conditions are difficult to apply.
Disclosure of Invention
The invention aims to provide a negative differential thermal conduction device based on an interface thermal resistance effect, a negative differential thermal conduction device and application.
In order to achieve the above object, according to an aspect of the present invention, there is provided a negative differential thermal conductance device based on an interfacial thermal resistance effect, including: the junction structure comprises a heating end, a heated end spaced from the heating end and a homojunction/heterojunction structure which is arranged between the heating end and the heated end and is formed by a first material and a second material in a close fit mode, and the homojunction/heterojunction structure integrally has a negative effective thermal expansion coefficient at an operating temperature.
According to the invention, one end of the first material is fixed to the heating tip and one end of the second material is fixed to the heated tip.
According to the invention, at least one section of the first material and the second material has a negative thermal expansion effect in an operating temperature range, so that the device has a negative differential thermal conductivity characteristic in the operating temperature range.
According to the invention, the first material and the second material are selected from one or more of negative thermal expansion materials.
According to the invention, the negative thermal expansion material can be selected from Si and ZrW2O8、Bi0.95La0.05NiO3And Mn3Cu0.53Ge0.47N, the above materials are preferred in the present invention, but are not limited thereto.
According to the invention, the negative differential thermal conductance device is a one-dimensional, two-dimensional or three-dimensional structure, preferably a linear structure, an annular structure or a columnar structure.
According to another aspect of the present invention, there is also provided a negative differential thermal conductance apparatus, which comprises any one of the negative differential thermal conductance devices described above.
According to yet another aspect of the present invention, there is also provided an application of the negative differential thermal conductance device in a thermal logic device, a thermal rectifier device or a thermal controller, such as in a thermal triode, a specific temperature heat sink, a specific temperature thermal switch.
Compared with the prior art, the invention has the beneficial effects that:
according to the invention, the heat flow control device with the temperature dependence characteristic can be realized by adding a simple homojunction/heterojunction structure in the heat transport path to be regulated and utilizing the temperature dependence characteristic of the thermal device, an external temperature detection device and a control device are not needed, the heat control system is simplified, and the accuracy of the heat control system and the timeliness of heat control are enhanced. Meanwhile, the thermal device with the negative differential thermal conductivity characteristic can realize that the heat flow increases along with the external temperature difference rather than monotonously in the working temperature range, namely the heat flow has a maximum value, and can be used for realizing a thermal switch, a specific temperature radiator, a thermal triode and the like. The thermal device with the negative differential thermal conductivity characteristic based on the interface thermal resistance effect greatly promotes the development of the field of thermal logic devices.
The thermal device directly depends on self temperature feedback without an external temperature measuring device and a control device, has higher working stability and wide applicability, is beneficial to promoting the development of various thermal devices and realizes more direct and efficient thermal control, and in addition, the related device has simple structure and plasticity of material shape, can be applied to one-dimensional, two-dimensional and even three-dimensional thermal transport regulation and control, has wide application range and is easy to produce and apply.
Drawings
Fig. 1 is a schematic view of a one-dimensional structure of a negative differential thermal conductance device based on an interfacial thermal resistance effect according to the present invention.
Fig. 2 is a graph of the temperature difference and the heat flow between the heating end and the heated end of the negative differential thermal conductance device based on the interface thermal resistance effect (taking Si homojunction as an example).
Fig. 3 is a schematic diagram of a two-dimensional structure of a negative differential thermal conductance device based on the interfacial thermal resistance effect according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings and embodiments. It should be emphasized that the specific embodiments described herein are merely illustrative of the invention, are some, not all, and therefore do not limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
As shown in fig. 1 to 3, a negative differential thermal conductance device (NDTC) based on an interfacial thermal resistance effect includes: the heating end 1 and the heated end 4 spaced apart from the heating end 1 are arranged between the heating end 1 and the heated end 4, and the homojunction/heterojunction structure (i.e. homojunction or heterojunction structure) is formed by two sections of materials in a close contact manner. At least one of the two sections of materials (namely the first material 2 and the second material 3) forming the homojunction/heterojunction structure has a negative thermal expansion effect in an operating temperature range, so that a thermal device has a negative differential thermal conductivity characteristic in the operating temperature range, and the homojunction/heterojunction structure integrally has a negative effective thermal expansion coefficient at the operating temperature.
The homojunction/heterojunction structure employed in the present invention is a commercially available product. The homojunction/heterojunction material has negative thermal expansion characteristics as a whole, and only the first material 2 or the second material 3 can be selected to be a negative thermal expansion material, or can be formed by a negative thermal expansion material doped with a positive thermal expansion material.
The negative differential thermal conduction device is formed by contacting two sections of materials, and the two sections of materials can be made of homogeneous materials or heterogeneous materials. During the working period of the negative differential thermal conduction device, the temperature difference between the heating end and the heated end acts on the homojunction/heterojunction, and the generated heat flow sequentially passes through the homojunction/heterojunction, and the negative differential thermal resistance effect of the thermal device is originated from the interface thermal resistance effect of the homojunction/heterojunction. When the temperature of the heating end is the same as that of the heated end and no heat flows through the homojunction/heterojunction, the interfaces of the homojunction/heterojunction are in good contact with each other, a certain mutual extrusion effect is achieved, the thermal resistance of the interfaces of the homojunction/heterojunction is small, and the heat transport channel of the homojunction/heterojunction is in an open state. When the temperature difference between the heating end and the heated end is increased, the volume of the homojunction/heterojunction structure with the negative thermal expansion coefficient is shrunk, the pressure at the interface of the homojunction/heterojunction structure is reduced, so that the thermal resistance of the interface between the homojunction/heterojunction structure is rapidly increased, and when the temperature difference between the heating end and the heated end is greater than the temperature difference threshold value, a thermal transport channel formed by the homojunction/heterojunction structure is gradually closed, so that the negative differential thermal conduction effect is caused.
Preferably, the first material 2 and the second material 3 are selected from one or more of negative thermal expansion materials. Wherein the negative thermal expansion material can be selected from, but not limited to, Si, ZrW2O8、Bi0.95La0.05NiO3、Mn3Cu0.53Ge0.47N, and the like. According to the invention, the selection of the material should comprehensively consider the effective total thermal expansion coefficient of the homojunction/heterojunction, the working temperature interval, the temperature dependence of the thermal conductivity of the material, the magnitude of heat flow required by the thermal device during working and other factors.
Preferably, two ends of the homojunction/heterojunction structure are respectively in close contact with and fixed on the heating end 1 and the heated end 4, so that the homojunction/heterojunction structure is ensured not to move in operation. That is, the contact surface between the heating end 1 and the first material 2 and the contact surface between the second material 3 and the heated end 4 are tightly contacted and fixedly arranged. In the step, the situation that the negative thermal expansion material has integrity due to shrinkage is considered, the two ends of the negative thermal expansion material are fixed, so that a thermal transport channel can be closed more quickly, and more accurate thermal transport control is realized.
In an embodiment of the present invention, taking the homogeneous structure of Si as an example of the heat transport channel, the homogeneous junction is placed in the temperature field formed by the heating end 1 and the heated end 4, the temperature of the heated end is controlled to be always kept at 100K, the temperature of the heating end is gradually changed from 100K to 120K, and the relationship between the steady-state heat flow J and the temperature difference between the heating end 1 and the heated end 4 is measured, and as a result, as shown in fig. 2, the heat flow has a maximum value when the temperature difference is 15K, that is, a negative differential thermal conduction phenomenon occurs. That is, the temperature difference-heat flow curve of a thermal device is characterized by a decreasing heat flow between a first applied temperature difference and a second applied temperature difference that is greater than the first applied temperature difference, i.e., a heat flow maximum occurs. The characteristic provides a new idea for realizing specific temperature heating and temperature control, simplifies the method for realizing temperature control by combining the traditional temperature detector and the traditional temperature controller, and realizes the properties of heating and temperature control by utilizing the self property of the heat transport channel.
Preferably, when the temperature difference between the heating end 1 and the heated end 4 is greater than the temperature difference threshold, the current passing through the homojunction/heterojunction gradually decreases to 0, i.e. the output value of the thermal logic device changes from 1 to 0. This also provides a straightforward idea for the design of thermal logic devices. The above example is a low temperature of about 100K, but the present invention is not limited to this, and the negative differential thermal conductance device and the negative differential thermal conductance apparatus that operate in different temperature ranges can be designed by replacing the negative thermal expansion material that forms the thermal transport channel.
According to the present invention, the negative differential thermal conductance device may be a one-dimensional, two-dimensional or three-dimensional structure, for example, a linear structure, a ring structure or a columnar structure. As an expansion scheme of the embodiment of the present invention, the homojunction/heterojunction structure forming the heat transport channel may also have other shapes, and fig. 3 shows a two-dimensional thermal device with negative differential thermal conductivity characteristics based on the interface thermal resistance effect. The volume, the surface area and the shape of the two sections of materials forming the homojunction/heterojunction structure are not strictly specified, and the two sections of materials can be set according to factors such as the thermal transport dimension, the appearance of a heating end, the appearance of a heated end and the like which are regulated and controlled as required.
As an optimization scheme of the embodiment of the invention, the two sections of materials of the homojunction/heterojunction structure are both made of materials with larger negative thermal expansion effect, so that sharper steady-state heat flow and a temperature difference curve between the heating end 1 and the heated end 4 can be realized, and the design of a local small-range and high-precision thermal regulation device can be realized by utilizing the property.
As an optimization scheme of the embodiment of the invention, the two sections of materials of the homojunction/heterojunction structure can be formed by a section of negative thermal expansion material and a section of positive thermal expansion material, the homojunction/heterojunction structure is ensured to have a negative effective thermal expansion coefficient in a working interval, more stable steady-state heat flow and a temperature difference curve between the heating end 1 and the heated end 4 can be realized, and the design of a thermal regulation device with a large local area can be realized by utilizing the property. Preferably, the homojunction/heterojunction structure can be selected from, but is not limited to: ZrW2O8、HfW2O8And the like.
According to another aspect of the present invention, there is also provided an application of the negative differential thermal conductance device based on the interfacial thermal resistance effect in a thermal logic device, a thermal rectifier device, and a thermal control device, such as a thermal triode, a specific temperature heat sink, and a specific temperature thermal switch.
Preferably, including series-parallel connection of thermal switches, a specific demand thermal logic circuit is constructed, allowing complex thermal control systems to be implemented.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (8)
1. A negative differential thermal conductance device based on the thermal interface resistance effect comprises: the structure comprises a heating end (1), a heated end (4) spaced from the heating end (1), and a homojunction/heterojunction structure which is arranged between the heating end (1) and the heated end (4) and is formed by a first material (2) and a second material (3) in a clinging mode, wherein the homojunction/heterojunction has a negative effective thermal expansion coefficient at the working temperature.
2. The negative differential thermal conductance device according to claim 1, wherein one end of the first material (2) is fixed to the heating end (1), and one end of the second material (3) is fixed to the heated end (4).
3. The device as claimed in claim 1 or 2, wherein at least one of the first material (2) and the second material (3) exhibits negative thermal expansion effect in the operating temperature range, so that the device exhibits negative differential thermal conductivity characteristics in the operating temperature range.
4. The negative differential thermal conductance device according to any of claims 1 to 3, wherein the first material (2) and the second material (3) are selected from one or more negative thermal expansion materials.
5. The negative differential thermal conductivity device as claimed in any one of claims 1 to 4, wherein the negative thermal expansion material is selected from Si, ZrW2O8、Bi0.95La0.05NiO3And Mn3Cu0.53Ge0.47One or more of N.
6. The negative differential thermal conductivity device as claimed in any one of claims 1 to 5, wherein the negative differential thermal conductivity device is a one-, two-or three-dimensional structure, preferably a linear, annular or columnar structure.
7. A negative differential thermal conductance device, comprising the negative differential thermal conductance device as claimed in any one of claims 1 to 6.
8. Use of the negative differential thermal conductance device of any one of claims 1 to 6 or the negative differential thermal conductance apparatus of claim 7 in a thermal logic device, a thermal rectifier device or a thermal controller, for example in a thermal triode, a specific temperature heat sink, a specific temperature thermal switch.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWM249053U (en) * | 2003-12-26 | 2004-11-01 | Hon Hai Prec Ind Co Ltd | Heat generating device |
| TW201131841A (en) * | 2010-03-08 | 2011-09-16 | Academia Sinica | Thermal rectifier and method for enabling thermal rectification |
| CN105304409A (en) * | 2015-09-11 | 2016-02-03 | 中国科学院理化技术研究所 | Thermal switch based on negative thermal expansion |
| CN109974514A (en) * | 2017-12-28 | 2019-07-05 | 清华大学 | Hot triode and Re Lu |
| CN110364501A (en) * | 2019-06-17 | 2019-10-22 | 中国科学院微电子研究所 | A kind of fluid channel radiator structure, manufacturing method and electronic device |
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2020
- 2020-03-09 CN CN202010159210.0A patent/CN113375494B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWM249053U (en) * | 2003-12-26 | 2004-11-01 | Hon Hai Prec Ind Co Ltd | Heat generating device |
| TW201131841A (en) * | 2010-03-08 | 2011-09-16 | Academia Sinica | Thermal rectifier and method for enabling thermal rectification |
| CN105304409A (en) * | 2015-09-11 | 2016-02-03 | 中国科学院理化技术研究所 | Thermal switch based on negative thermal expansion |
| CN109974514A (en) * | 2017-12-28 | 2019-07-05 | 清华大学 | Hot triode and Re Lu |
| CN110364501A (en) * | 2019-06-17 | 2019-10-22 | 中国科学院微电子研究所 | A kind of fluid channel radiator structure, manufacturing method and electronic device |
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