CN113373519B - Nanometer copper crystal growth experimental simulation device and method - Google Patents
Nanometer copper crystal growth experimental simulation device and method Download PDFInfo
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- CN113373519B CN113373519B CN202110690630.6A CN202110690630A CN113373519B CN 113373519 B CN113373519 B CN 113373519B CN 202110690630 A CN202110690630 A CN 202110690630A CN 113373519 B CN113373519 B CN 113373519B
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
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Abstract
The invention relates to an experimental simulation device and method for growing nano copper crystals, wherein the device comprises an air compressor, a liquid adding container and a plurality of reactors, the reactors are arranged in series, the air compressor is connected with the liquid adding container, the liquid adding container is connected with the reactors at the head ends of the reactors connected in series through a liquid adding pipeline, and a first pressure valve and a pressure gauge are respectively arranged on inlet pipelines of the reactors connected in series. According to the invention, by utilizing a plurality of reactors connected in series, each reactor can independently control the temperature and the pressure, chalcopyrite in the flow evolution process of the simulated ore-forming hot liquid is synthesized by utilizing the reactors, the chalcopyrite samples generated under different temperature and pressure conditions are obtained, the whole synthesis process is automatically completed in a closed system, and the degree of automation is improved.
Description
Technical Field
The invention relates to the field of hydrothermal synthesis of chalcopyrite crystals, in particular to a simulation device and a simulation method for nano-copper crystal growth experiments.
Background
As the most important Cu-S standard mineral, chalcopyrite with different production and mineral combination characteristics can provide important marks for the direction of prospecting. Chalcopyrite is sensitive to changing reactions of the physicochemical conditions of the hydrothermal fluid and can provide important information about the environment of the hydrothermal mineralization. The simulation of the hydrothermal activity environment and the mineralization process of sulfides by combining with modern science and technology is one of the necessary means for researching the complex geological process of hydrothermal activity. The growth mode of chalcopyrite nano-micro crystal shows different paths and processes from the growth of macro crystal in the traditional theory, and the research on the growth mechanism of the chalcopyrite nano-micro crystal has important theoretical significance and practical value in the aspects of knowing the formation environment and distribution rule of the chalcopyrite in natural geologic bodies, revealing the complex geological action process of the formation of the chalcopyrite nano-micro crystal, obtaining the technical method of nano mineral material preparation and the like.
At present, nano-micron chalcopyrite is mainly prepared by a hydrothermal method, and the existing experiment is generally carried out under the conditions of a single reaction kettle, a standing environment and fixed temperature and pressure. However, the single kettle-standing-fixed temperature and pressure device cannot simulate the growth process of nano-micron chalcopyrite in the hydrothermal solution ore forming process under the temperature and pressure change condition of a flowing system.
Disclosure of Invention
Aiming at the defects of the prior art, the invention provides a simulation device and a simulation method for a nano copper crystal growth experiment.
The technical scheme for solving the technical problems is as follows: the utility model provides a nanometer copper crystal growth experiment analogue means, includes air compressor, liquid feeding container and a plurality of reactor, and is a plurality of the reactor is established ties and is arranged, air compressor with the liquid feeding container is connected, the liquid feeding container is connected through the reactor that liquid feeding pipeline and a plurality of series connection reactors are located the head end, is equipped with first pressure valve and manometer on the entry pipeline of a plurality of series connection reactors respectively.
The beneficial effects of the invention are as follows: according to the invention, by utilizing a plurality of reactors connected in series, each reactor can independently control the temperature and the pressure, chalcopyrite in the flow evolution process of the simulated ore-forming hot liquid is synthesized by utilizing the reactors, the chalcopyrite samples generated under different temperature and pressure conditions are obtained, the whole synthesis process is automatically completed in a closed system, and the degree of automation is improved.
On the basis of the technical scheme, the invention can be improved as follows.
Further, the reactor further comprises a booster, the booster is connected with inlet pipelines of the reactors connected in series through booster pipelines respectively, and the booster pipelines are provided with second pressure valves.
The beneficial effects of adopting the further scheme are as follows: a booster may be used to provide pressure to each reactor in series.
Further, the booster provides a maximum pressure of no more than 50Mpa.
Further, the outlet pipelines of the reactors connected in series are respectively connected with a third pressure valve; the outlet pipelines of the reactors connected in series are respectively connected with an outlet branch, the outlet branch is connected with a condensing tank, and the outlet branch is connected with a fourth pressure valve.
The beneficial effects of adopting the further scheme are as follows: the solution in each stage of reactor is led into a condensing tank under the control of a fourth pressure valve of an outlet branch, and the condensing tank can be utilized to cool the reaction liquid after the experiment of each reactor is completed.
Further, a fifth pressure valve is arranged on the liquid adding pipeline, and a sixth pressure valve is arranged on a pipeline between the air compressor and the liquid adding container.
Further, a heating device is connected to the reactor, and the heating temperature of the heating device is not more than 500 ℃.
The beneficial effects of adopting the further scheme are as follows: the heating means provides the reactor with the desired reaction temperature.
Further, three reactors are arranged in series.
A simulation method for a nano copper crystal growth experiment comprises the following steps:
s1, a liquid adding container holds prepared initial solution, and under the pressure provided by an air compressor, the initial solution is injected into a first-stage reactor positioned at the head end of a plurality of reactors which are arranged in series;
s2, monitoring the pressure of the reactor to be tested through the pressure gauges corresponding to the reactors arranged in series, and carrying out the test after the pressure of the reactor to be tested reaches the test requirement pressure; the pressure of the first-stage reactor at the head end reaches the experimental required pressure, and then the first-stage reaction solution is obtained by reaction, and is led into other stages of reactors connected in series with the first-stage reactor at the head end for reaction; in each reactor in series, the pressure of the reactor to be tested is smaller than that of the last reactor in series, so that the reaction solution flows into the downstream reactor by means of the pressure difference.
The beneficial effects of the invention are as follows: according to the method, the plurality of reactors connected in series are utilized, the temperature and the pressure of each reactor can be independently controlled, the reactors are utilized to synthesize and simulate chalcopyrite in the flow evolution process of the ore-smelting liquid, the chalcopyrite samples generated under different temperature and pressure conditions are obtained, the whole synthesis process is automatically completed in a closed system, and the degree of automation is improved.
Further, in S2, the pressure of the reactor to be tested is monitored by the pressure gauge corresponding to each reactor arranged in series, and if the pressure of the reactor to be tested does not reach the experimental requirement pressure, the reactor to be tested is pressurized by the pressurizer, and after the pressure of the reactor to be tested reaches the experimental requirement pressure, the first pressure valve of the inlet pipeline of the reactor to be tested and the second pressure valve of the pressurizing pipeline are closed.
Further, in S2, the reactor to be tested is heated by the heating device, and after the set temperature of the reactor is reached, whether the pressure displayed by the pressure gauge of the inlet pipeline of the reactor to be tested reaches the test requirement pressure is observed.
Drawings
FIG. 1 is a schematic diagram of the structural flow of the experimental simulation device for the growth of nano copper crystals.
In the drawings, the list of components represented by the various numbers is as follows:
1. a first stage reactor; 2. a secondary reactor; 3. a third-stage reactor; 4. a heating device; 5. an air compressor; 6. a liquid adding container; 7. a supercharger; 8. a first pressure valve; 9. a pressure gauge; 10. a second pressure valve; 11. a third pressure valve; 13. a fourth pressure valve; 14. a condensing tank; 15. a fifth pressure valve; 16. and a sixth pressure valve.
Detailed Description
The principles and features of the present invention are described below with reference to the drawings, the examples are illustrated for the purpose of illustrating the invention and are not to be construed as limiting the scope of the invention.
Example 1
As shown in fig. 1, the experimental simulation device for nano copper crystal growth in this embodiment includes an air compressor 5, a liquid adding container 6 and a plurality of reactors, wherein a plurality of reactors are arranged in series, the air compressor 5 is connected with the liquid adding container 6, the liquid adding container 6 is connected with the reactors of the plurality of reactors connected in series at the head end through a liquid adding pipeline, and a first pressure valve 8 and a pressure gauge 9 are respectively arranged on inlet pipelines of the reactors connected in series.
The air compressor 5 of the present embodiment is used to provide pressure and power to the booster 7 and the charging reservoir 6. The charging container 6 is used for containing the prepared initial solution, and the reaction solution is injected into the primary reactor 1 under the action of pressure and power provided by the air compressor 5.
The reactor of the embodiment is used as a main place for crystal growth and is made of high-temperature-resistant, high-pressure-resistant and corrosion-resistant materials.
As shown in fig. 1, the simulation device of the present embodiment further includes a booster 7, where the booster 7 is connected to inlet pipes of the plurality of reactors connected in series through booster pipes, and the booster pipes are provided with second pressure valves 10. A booster may be used to provide pressure to each reactor in series.
Wherein the air compressor 5 can be used to provide pressure and power for the booster 7 and the charging container. The maximum pressure provided by the booster 7 is not greater than 50Mpa.
As shown in fig. 1, the outlet pipelines of the reactors connected in series are respectively connected with a third pressure valve 11; outlet branches are respectively connected to outlet pipelines of the reactors connected in series, the outlet branches are connected with a condensation tank 14, and a fourth pressure valve 13 is connected to the outlet branches. The solution in each reactor is led into a condensing tank 14 under the control of a fourth pressure valve 13 of the outlet branch, and the condensing tank 14 can be used for cooling the reaction solution after the experiment of each reactor is completed.
As shown in fig. 1, a fifth pressure valve 15 is disposed on the liquid feeding pipe, and a sixth pressure valve 16 is disposed on the pipe between the air compressor 5 and the liquid feeding container 6.
As shown in fig. 1, a heating device 4 is connected to the reactor, and the heating temperature of the heating device 4 is not more than 500 ℃. The reactor is fixed in a heating device 4 which provides the desired reaction temperature for the 4 reactor.
As shown in fig. 1, the simulation apparatus of the present embodiment includes a plurality of reactors arranged in series, each of which is a primary reactor, a secondary reactor, … …, and an N-stage reactor (N is not less than 2) in order of solution reaction. Each stage of reactor is used as a reactor vessel for crystal growth, and each stage of reactor is connected with a heating device 4 for heating the corresponding reactor.
As shown in fig. 1, the plurality of reactors in series includes two reactors in series, three reactors in series, four reactors in series, five reactors in series, and the like.
The heating device, the reactor and the pressure gauge in the embodiment form a primary independent reaction system, the temperature and the pressure of the reactors of each stage of reaction system can be controlled independently, the reactors of each stage are connected through a pressure valve, and the pressure valve directionally controls fluid to flow from the primary reactor to the secondary reactor and then sequentially flow to the N-stage reactor (N is not less than 2). All stages of reactors are connected with the condensing tank, so that the problem of shortage of the simulation device for the nano copper crystal growth experiment under a flowing system is solved.
The reactors connected in series in this embodiment may be used independently or after being connected in series.
The working process of the experimental simulation device for nano copper crystal growth in this embodiment is that under the pressure power provided by an air compressor, the initial solution in the liquid adding container can be introduced into the first-stage reactor 1, the solution after the reaction in the first-stage reactor can be introduced into the second-stage reactor 2 for further reaction through the third pressure valve 13 of the outlet pipeline of the first-stage reactor, and also can be introduced into the condensing tank 14 through the fourth pressure valve 13 arranged on the outlet branch connected with the outlet pipeline of the first-stage reactor. The solution in the secondary reactor 2 can be introduced into the tertiary reactor 3 for further reaction via a third pressure valve 13 in the outlet line of the secondary reactor 2, and can also be introduced into the condensation tank 14 via a fourth pressure valve 13 arranged in an outlet branch connected to the outlet line of the secondary reactor 2. The reaction solution in the three-stage reactor 3 can be introduced into the next-stage reactor for reaction through a third pressure valve 13 of an outlet pipeline of the three-stage reactor 3, and can also be introduced into a condensing tank 14 through a fourth pressure valve 13 arranged on an outlet branch connected with the outlet pipeline of the three-stage reactor 3. Only three reactors may be provided, i.e. after the reaction of the three-stage reactor 3 is completed, no subsequent reaction is performed, the reaction solution of the three-stage reactor 3 may be introduced into the condensation tank 14 for cooling, or may be directly discharged through the third pressure valve 13 on the outlet pipeline of the three-stage reactor 3. The reaction solution in the condensation tank 14 can be discharged and collected through a pressure valve on an outlet pipe of the condensation tank 14 after being cooled.
Before each experiment starts, all pressure valves of the experiment simulation device are in a closed state, when the experiment simulation device is used each time, a reaction solution is firstly added into a liquid adding container, an air compressor is opened, a sixth pressure valve 16 between the air compressor and the liquid adding container, a fifth pressure valve 15 on a liquid adding pipeline and a second pressure valve 10 on a pressurizing pipeline are opened, under the condition that the pressure is used, the reaction solution enters the first-stage reactor 1 from the liquid adding container, the heating temperature of a heating device on the reactor 1 is set, after the set temperature is reached, a pressure gauge on an inlet pipeline of the first-stage reactor is observed, if the pressure required by the experiment is not reached, the pressure of the first-stage reactor is pressurized through the pressurizing device, after the experiment required pressure is reached, the second pressure valve 10 and the first pressure valve 8 are closed, after the experiment in the first-stage reactor is completed, the heating temperature of the heating device on the second-stage reactor is set, after the set temperature is reached, a third pressure valve 13 on an outlet pipeline of the first-stage reactor and a first pressure valve 8 on an inlet pipeline of the second-stage reactor are opened, after the pressure difference in the first-stage reactor enters the second-stage reactor 2, and the pressure in the third-stage reactor is transferred to the first-stage reactor 1, and the first-stage reactor is closed; then observing a pressure gauge 9 of an inlet pipeline of the secondary reactor 2, if the pressure does not reach the experimental requirement, opening a second pressure valve 10 on a pressurizing pipeline to pressurize the secondary reactor 2 through a pressurizer 7, and closing the second pressure valve 10 on the pressurizing pipeline and a first pressure valve 8 on the inlet pipeline of the secondary reactor 2 after the pressurization is completed; after the experiment in the secondary reactor 2 is completed, setting the heating temperature of a heating device on the secondary reactor 2, opening a third pressure valve 13 on an outlet pipeline of the secondary reactor 2 and a first pressure valve 8 on an inlet pipeline of the tertiary reactor 3 after the heating temperature reaches the set temperature, enabling the solution in the secondary reactor 2 to enter the tertiary reactor 3 under the action of pressure difference, and closing the third pressure valve 13 on the outlet pipeline of the secondary reactor after solution transfer is completed; and observing a pressure gauge on an inlet pipeline of the three-stage reactor 3, if the pressure does not meet the experimental requirement, opening a second pressure valve 10 on a pressurizing pipeline to pressurize the three-stage reactor through the pressurizer, closing the second pressure valve 10 and a first pressure valve 8 on the inlet pipeline of the three-stage reactor 3 after pressurizing is finished, opening a fourth pressure valve 13 on an outlet branch connected with an outlet pipeline of the three-stage reactor after the experiment in the second-stage reactor 2 is finished, enabling reaction liquid to enter a condensing tank, closing the fourth pressure valve 13 on the outlet branch connected with the outlet pipeline of the three-stage reactor 3 after the reaction liquid is transferred, and collecting the reaction liquid, thereby realizing nano-micron chalcopyrite synthesized by a hydrothermal method under different temperature and pressure conditions based on a flow system of the three-stage reactor. Of course, in the above test, the reaction liquids in the primary reactor 1 and the secondary reactor 2 may be directly introduced into the condensing tank for cooling and collection through the fourth pressure valve 13 on the outlet branch connected to the outlet line of the primary reactor 1 and the fourth pressure valve 13 on the outlet branch connected to the outlet line of the secondary reactor 2. The above experimental procedure only illustrates the case of three reactors, and for the case of more than three reactors, reference may be made to the experimental procedure of three reactors.
According to the embodiment, the problem that nano copper crystals can be synthesized only under the fixed pressure stabilizing condition can be solved, the temperature and the pressure of each reactor can be independently controlled by utilizing a plurality of reactors connected in series, chalcopyrite in the flow evolution process of the simulated ore-forming hot liquid is synthesized by utilizing the reactors, chalcopyrite samples generated under different temperature and pressure conditions are obtained, the whole synthesis process is automatically completed in a closed system, and the degree of automation is improved.
Example 2
The experimental simulation method for the growth of the nano copper crystal in the embodiment comprises the following steps:
s1, a liquid adding container 6 is used for containing the prepared initial solution, and the initial solution is injected into a first-stage reactor 1 positioned at the head end of a plurality of reactors which are arranged in series under the pressure provided by an air compressor 5;
s2, monitoring the pressure of the reactor to be tested through the pressure gauge 9 corresponding to each reactor arranged in series, and carrying out the test after the pressure of the reactor to be tested reaches the test requirement pressure; the first-stage reactor 1 at the head end reacts to obtain a first-stage reaction solution after the pressure of the first-stage reactor 1 reaches the experimental required pressure, and the first-stage reaction solution is introduced into other stages of reactors connected in series with the first-stage reactor 1 at the head end for reaction; in each reactor in series, the pressure of the reactor to be tested is smaller than that of the last reactor in series, so that the reaction solution flows into the downstream reactor by means of the pressure difference.
In S2, the pressure of the reactor to be tested is monitored by the pressure gauge 9 corresponding to each reactor arranged in series, and if the pressure of the reactor to be tested does not reach the experimental requirement pressure, the reactor to be tested is pressurized by the pressurizer 7, and after the pressure of the reactor to be tested reaches the experimental requirement pressure, the first pressure valve 8 of the inlet pipeline of the reactor to be tested and the second pressure valve 10 of the pressurizing pipeline are closed.
In S2, the reactor to be tested is heated by the heating device 4, and after the set temperature of the reactor is reached, whether the pressure displayed by the pressure gauge 9 of the inlet pipeline of the reactor to be tested reaches the test requirement pressure is observed.
The specific experimental process of the method of this embodiment may refer to the working process of the experimental simulation apparatus for growing nano copper crystals in embodiment 1, and will not be described herein. In the method of this example, when the secondary reactor 2 is used for the experiment, the primary reactor 1 may also be used for the next reaction experiment. All stages of reactors can be subjected to experiments at the same time so as to improve efficiency and accelerate circulation.
According to the method, the temperature and the pressure of each reactor can be independently controlled by utilizing the plurality of reactors connected in series, chalcopyrite in the flow evolution process of the simulated ore-smelting liquid is synthesized by utilizing the reactors, the chalcopyrite samples generated under different temperature and pressure conditions are obtained, the whole synthesis process is automatically completed in a closed system, and the degree of automation is improved.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present invention, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present invention, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
In the description of the present specification, a description referring to terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
While embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the invention, and that variations, modifications, alternatives and variations may be made to the above embodiments by one of ordinary skill in the art within the scope of the invention.
Claims (6)
1. The nano copper crystal growth experimental simulation method is characterized by comprising a nano copper crystal growth experimental simulation device, wherein the nano copper crystal growth experimental simulation device comprises an air compressor, a liquid adding container, a booster and a plurality of reactors, the reactors are arranged in series, the air compressor is connected with the liquid adding container, the liquid adding container is connected with the reactors positioned at the head ends of the reactors in series through liquid adding pipelines, and a first pressure valve and a pressure gauge are respectively arranged on inlet pipelines of the reactors in series; the pressurizer is connected with inlet pipelines of a plurality of reactors connected in series through pressurizing pipelines respectively, and a second pressure valve is arranged on the pressurizing pipelines; the outlet pipelines of the reactors connected in series are respectively connected with a third pressure valve; the outlet pipelines of the reactors connected in series are respectively connected with an outlet branch, the outlet branch is connected with a condensing tank, and the outlet branch is connected with a fourth pressure valve; a fifth pressure valve is arranged on the liquid adding pipeline, and a sixth pressure valve is arranged on a pipeline between the air compressor and the liquid adding container;
the experimental simulation method for the growth of the nano copper crystal comprises the following steps:
s1, a liquid adding container holds prepared initial solution, and under the pressure provided by an air compressor, the initial solution is injected into a first-stage reactor positioned at the head end of a plurality of reactors which are arranged in series;
s2, monitoring the pressure of the reactor to be tested through the pressure gauges corresponding to the reactors arranged in series, and carrying out the test after the pressure of the reactor to be tested reaches the test requirement pressure; the pressure of the first-stage reactor at the head end reaches the experimental required pressure, and then the first-stage reaction solution is obtained by reaction, and is led into other stages of reactors connected in series with the first-stage reactor at the head end for reaction; in each reactor in series, the pressure of the reactor to be tested is smaller than the pressure of the reactor in the last series.
2. The method of claim 1, wherein the maximum pressure provided by the booster is not greater than 50Mpa.
3. The experimental simulation method for growth of nano copper crystal according to claim 1, wherein the reactor is connected with a heating device, and the heating temperature of the heating device is not more than 500 ℃.
4. A method of simulating the growth of a nano-copper crystal according to claim 1, wherein three reactors are arranged in series.
5. The simulation method for nano-copper crystal growth experiment according to claim 1, wherein in S2, the pressure of the reactor to be tested is monitored by a pressure gauge corresponding to each reactor arranged in series, and if the pressure of the reactor to be tested does not reach the experimental requirement pressure, the reactor to be tested is pressurized by a pressurizer, and after the pressure of the reactor to be tested reaches the experimental requirement pressure, the first pressure valve of the inlet pipeline of the reactor to be tested and the second pressure valve of the pressurizing pipeline are closed.
6. The simulation method of nano-copper crystal growth experiment according to claim 1, wherein in S2, the reactor to be tested is heated by a heating device, and after the set temperature of the reactor is reached, whether the pressure displayed by the pressure gauge of the inlet pipeline of the reactor to be tested reaches the experimental required pressure is observed.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102435716A (en) * | 2011-09-14 | 2012-05-02 | 中国石油天然气股份有限公司 | Diagenesis simulation experiment device |
| CN203235477U (en) * | 2013-03-13 | 2013-10-16 | 南京师范大学 | Pipe-type reaction series countercurrent reaction device |
| CN111829849A (en) * | 2020-07-24 | 2020-10-27 | 中国科学院地球化学研究所 | Method for directly synthesizing high-purity and high-density chalcopyrite block material by solid-phase reaction |
| CN112844267A (en) * | 2021-01-20 | 2021-05-28 | 浙江晶立捷环境科技有限公司 | Subcritical oxidation process material verification reactor, use method and reaction system |
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| US20130230717A1 (en) * | 2011-09-02 | 2013-09-05 | Washington University In St. Louis | Copper nanostructures and methods for their preparation |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102435716A (en) * | 2011-09-14 | 2012-05-02 | 中国石油天然气股份有限公司 | Diagenesis simulation experiment device |
| CN203235477U (en) * | 2013-03-13 | 2013-10-16 | 南京师范大学 | Pipe-type reaction series countercurrent reaction device |
| CN111829849A (en) * | 2020-07-24 | 2020-10-27 | 中国科学院地球化学研究所 | Method for directly synthesizing high-purity and high-density chalcopyrite block material by solid-phase reaction |
| CN112844267A (en) * | 2021-01-20 | 2021-05-28 | 浙江晶立捷环境科技有限公司 | Subcritical oxidation process material verification reactor, use method and reaction system |
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