CN113364416A - Power supply circuit for grid feed of microwave pulse power amplifier - Google Patents

Power supply circuit for grid feed of microwave pulse power amplifier Download PDF

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Publication number
CN113364416A
CN113364416A CN202110686844.6A CN202110686844A CN113364416A CN 113364416 A CN113364416 A CN 113364416A CN 202110686844 A CN202110686844 A CN 202110686844A CN 113364416 A CN113364416 A CN 113364416A
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power supply
power
supply circuit
interference
feedback loop
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CN113364416B (en
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何激扬
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Chengdu Tiantong Electronic Technology Co ltd
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/08Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/44Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/02Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • H02M3/1582Buck-boost converters
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/213Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K7/00Modulating pulses with a continuously-variable modulating signal
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Abstract

The invention provides a power supply circuit for grid feeding of a microwave pulse power amplifier, which comprises a power amplifier, a power pulse modulator, an isolating switch power supply and a feedback loop, wherein the power amplifier is connected with the power pulse modulator; the drain electrode of the power amplifier is connected with the power supply pulse modulator, the grid electrode of the power amplifier is connected with the isolation switch power supply, and the isolation switch power supply is connected with the feedback loop; the feedback loop eliminates the resistance coupling interference of a pulse current return line of the power circuit through the arrangement of zero and pole, and meanwhile, the isolation switch power supply further cancels the return line interference. The power supply circuit solves the problem of grid interference of the microwave pulse power amplifier.

Description

Power supply circuit for grid feed of microwave pulse power amplifier
Technical Field
The invention relates to the technical field of microwave power amplifiers, in particular to a power supply circuit for grid feeding of a microwave pulse power amplifier.
Background
Pulse microwave amplifiers are used in a great number in modern radar, friend or foe identification and other systems. Pulsed microwave amplifiers are most commonly referred to as microwave power amplifiers. Microwave power amplifiers have become the core component of all electronic warfare equipment, and their performance indexes and stability directly affect the performance and reliability of the whole equipment, thus getting special attention.
Currently, with the development of system emission power towards high power and solid-state, high-speed drain modulation of GaN microwave pulse power amplifiers has become the mainstream. However, the modulation method causes serious interference of the burst pulse current of the drain electrode on the grid voltage, forms a positive feedback condition, causes self-excitation of the amplifier, and particularly has serious problem in system connection test. The situation is more serious when the device is operated at low temperature.
The grid electrode of the GaN power amplifier is required to be a negative voltage, the voltage is usually-0.2V to-1V fixed voltage according to different GaN requirements and amplifier gain requirements, and the grid electrode generated voltage is mostly generated by adopting a non-isolated switching power supply at present. Due to the size limitation of the power amplifier, the switching power supply adopts a BUCK-BOOST topology integrated single-chip switching power supply. The amplifier system principle is as shown in figure 1 of the accompanying drawings.
Since the system current is a pulse current, and dI/dt is very large. Taking a microwave pulse power amplifier with a peak power of 200W as an example, the supply voltage (drain voltage) is usually 28V, the pulse rising/falling edge dt is 20ns, the amplifier efficiency is 30%, and the drain peak current I isP23.8A, consisting of:
Figure BDA0003125026440000011
wherein, Δ V is the induced voltage of the pulse current on the distributed inductor, L is the resultant of the distributed inductor of the line and the 1/4 wavelength line equivalent inductor, and the induced voltage Δ V will enter the input terminal of the gate power supply through the power supply pulse modulator.
On the other hand, the pulse current will also generate ground interference on the loop distribution resistor and couple to the input of the gate power supply through a resistive coupling effect.
Due to the equivalent series resistance ESR of the energy storage capacitor, the two interference waveforms cannot be effectively filtered through the energy storage capacitor, and an interference waveform is formed at the input end of the grid power supply. The interference formation is shown in figure 2 of the accompanying drawings.
These power line disturbances can cause pulse modulated disturbances at the gate of the amplifier through the non-isolated switching power supply, which can create self-excited conditions (e.g., low temperature operation) when the amplifier gain is high. Even if the self-excitation can not be formed, the microwave output signal has a modulation envelope and the frequency spectrum is deteriorated.
Disclosure of Invention
In view of the above, the present invention is directed to thoroughly eliminate the hidden danger of gate interference by using a gate-fed power circuit, which adopts a specially designed feedback loop zero-pole setting method, cooperates with the switching frequency setting, and adopts an isolated output mode.
The invention provides a power supply circuit for grid feeding of a microwave power amplifier, which comprises: the power amplifier, the power supply pulse modulator, the isolation switch power supply and the feedback loop;
the drain electrode of the power amplifier is connected with the power supply pulse modulator, the grid electrode of the power amplifier is connected with the isolation switch power supply, and the isolation switch power supply is connected with the feedback loop;
the feedback loop eliminates the resistance coupling interference of a pulse current return line of the power circuit through the arrangement of zero and pole, and meanwhile, the isolation switch power supply further cancels the return line interference.
Further, the switching frequency of the isolated power switch is set in synchronization with the modulation pulse frequency of the power pulse modulator.
Furthermore, the power supply pulse modulator is controlled by a TTL signal, and the modulation frequency is continuously or discretely changed according to the system requirement.
Furthermore, the zero and the pole of the feedback loop are arranged to eliminate the pulse current loop resistance coupling interference of the power circuit, and the isolation switch power supply is used for counteracting the loop interference.
Further, the loop line interference is cancelled by the isolated switch power supply through a 'floating' output voltage.
Further, the switching frequency of the isolated switching power supply is set to 1.2 MHz.
Further, the crossover frequency of the feedback loop is set to 1/3 of the switching frequency, which is 400 KHz.
Further, the topology of the feedback loop is type 3.
Further, the power supply circuit also comprises 1/4 wavelength line equivalent inductance and radio frequency coupling capacitance.
Further, the power supply circuit further comprises an energy storage capacitor.
The power supply circuit of the invention is also suitable for GaAs amplifiers and LDMOS amplifiers.
Compared with the prior art, the invention has the beneficial effects that:
the power supply circuit solves the problem of grid interference of the microwave pulse power amplifier.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention.
In the drawings:
fig. 1 is a system schematic configuration diagram of a power amplifier of the prior art;
FIG. 2 is a schematic diagram of disturbance formation at a gate power input of the prior art;
FIG. 3 is a topology structure diagram of a feedback loop according to an embodiment of the present invention;
FIG. 4 is a loop bode diagram of a feedback loop according to an embodiment of the present invention;
fig. 5 is a system block diagram and an interference suppression diagram of a power circuit fed by a gate of a microwave power amplifier according to an embodiment of the present invention.
Detailed Description
Reference will now be made in detail to the exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, like numbers in different drawings represent the same or similar elements unless otherwise indicated. The implementations described in the exemplary embodiments below are not intended to represent all implementations consistent with the present disclosure. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the present disclosure, as detailed in the appended claims.
The terminology used in the present disclosure is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used in this disclosure and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the term "and/or" as used herein refers to and encompasses any and all possible combinations of one or more of the associated listed items.
It should be understood that although the terms first, second, and third may be used in this disclosure to describe various information, this information should not be limited to these terms. These terms are only used to distinguish one type of information from another. For example, first information may also be referred to as second information, and similarly, second information may also be referred to as first information, without departing from the scope of the present disclosure. The word "if" as used herein may be interpreted as "at … …" or "when … …" or "in response to a determination", depending on the context.
The design idea of the invention is as follows: the pulse modulation frequency (repetition frequency) of the microwave pulse power amplifier is usually between several KHz and 100KHz and is controlled by TTL signals, and the modulation frequency is usually not a fixed value and can be continuously or discretely changed according to the system requirements. The gate-generated interference at the input of the switching power supply is synchronized to this modulation frequency. The feedback loop of the switching power supply must suppress this disturbance forcibly.
On the other hand, the gate voltage-Vg of the GaN power amplifier is relative to the source Vs voltage, and the output is stable as long as | -Vg | -Vs is stable (no interference). Therefore, the isolated output mode is adopted to make Vg float so as to counteract the ground wire interference.
An embodiment of the present invention provides a power circuit for gate feeding of a microwave power amplifier, as shown in fig. 5, including: the power amplifier, the power supply pulse modulator, the isolation switch power supply and the feedback loop;
the drain electrode of the power amplifier is connected with the power supply pulse modulator, the grid electrode of the power amplifier is connected with the isolation switch power supply, and the isolation switch power supply is connected with the feedback loop;
the feedback loop eliminates the resistance coupling interference of a pulse current return line of the power circuit through the arrangement of zero and pole, and meanwhile, the isolation switch power supply further cancels the return line interference.
The switching frequency of the isolated power switch is set synchronously with the modulation pulse frequency of the power pulse modulator.
Specifically, the zero and the pole of the feedback loop are arranged to eliminate the pulse current loop resistance coupling interference of the power circuit, and meanwhile, the loop interference is counteracted through the isolation switch power supply.
The zero point of the feedback loop needs higher frequency, and the switching frequency of the switching power supply needs to be very high to ensure the higher zero point frequency, and the switching frequency of the isolation switching power supply is set to 1.2MHz by combining the frequency characteristics of the magnetic material of the transformer and the miniaturization requirement of the power supply.
Specifically, the crossover frequency of the feedback loop is set to 1/3 of the switching frequency, which is 400KHz, unlike the typical crossover frequency (1/4-1/10) setting. Such a loop arrangement can maximize suppression of input disturbances, but output voltage accuracy can be affected. Because the average current of the grid electrode is very small (GaN is a voltage control device), the voltage precision is compensated by adopting secondary linear voltage stabilization, and the design target is realized; the loop bode diagram is shown in figure 4 of the accompanying drawings.
Specifically, the topology of the feedback loop is type 3, as shown in fig. 3 of the accompanying drawings.
Specifically, the isolated switch power supply counteracts the loop interference by means of "floating" output voltage.
The power supply pulse modulator is controlled by TTL signals, and the modulation frequency is continuously or discretely changed according to the system requirements.
The power supply circuit further comprises 1/4 wavelength line equivalent inductance and radio frequency coupling capacitance.
The power supply circuit further comprises an energy storage capacitor.
The power supply circuit of the invention is also suitable for GaAs amplifiers and LDMOS amplifiers.
Compared with the prior art, the invention has the beneficial effects that:
the power supply circuit solves the problem of grid interference of the microwave pulse power amplifier.
So far, the technical solutions of the present invention have been described in connection with the preferred embodiments shown in the drawings, but it is easily understood by those skilled in the art that the scope of the present invention is obviously not limited to these specific embodiments. Without departing from the principle of the invention, a person skilled in the art can make the same changes or substitutions on the related technical features, and the technical solutions after the changes or substitutions will fall within the protection scope of the invention.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention; various modifications and alterations to this invention will become apparent to those skilled in the art. Any modification, substitution and improvement made within the spirit and principle of the present invention shall fall within the protection scope of the present invention.

Claims (10)

1. A gate-fed power supply circuit for a microwave pulse power amplifier, comprising: the power amplifier, the power supply pulse modulator, the isolation switch power supply and the feedback loop;
the drain electrode of the power amplifier is connected with the power supply pulse modulator, the grid electrode of the power amplifier is connected with the isolation switch power supply, and the isolation switch power supply is connected with the feedback loop;
the feedback loop eliminates the resistance coupling interference of a pulse current return line of the power circuit through the arrangement of zero and pole, and meanwhile, the isolation switch power supply further cancels the return line interference.
2. The power supply circuit of claim 1, wherein the switching frequency of the isolated power switch is set in synchronization with the modulation pulse frequency of the power pulse modulator.
3. The power supply circuit of claim 1, wherein the poles and zeros of the feedback loop are set to eliminate the loop interference of the pulsed current of the power supply circuit, and the loop interference is cancelled by the isolated switching power supply.
4. The power supply circuit according to claim 2, wherein the switching frequency of the isolated switching power supply is set to 1.2 MHz.
5. The power supply circuit of claim 4 wherein the crossover frequency of the feedback loop is set to 1/3 of the switching frequency at 400 KHz.
6. The power supply circuit of claim 1, wherein the topology of the feedback loop is type 3.
7. The power supply circuit of claim 1, wherein the isolated switching power supply cancellation loop interference is cancellation loop interference through "floating" output voltage.
8. The power supply circuit of claim 2, wherein the power pulse modulator is controlled by the TTL signal, and the modulation frequency is varied continuously or discretely according to system requirements.
9. The power supply circuit of claim 1, further comprising 1/4 wavelength line equivalent inductance, radio frequency coupling capacitance.
10. The power supply circuit of claim 1, further comprising an energy storage capacitor.
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Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009278818A (en) * 2008-05-16 2009-11-26 Panasonic Electric Works Co Ltd Switching power supply unit
CN102063145A (en) * 2010-12-30 2011-05-18 东南大学 Self-adaption frequency compensation low voltage-difference linear voltage regulator
US20120120342A1 (en) * 2010-04-23 2012-05-17 Rohm Co., Ltd. Control circuit for switching power supply
CN103391010A (en) * 2013-07-25 2013-11-13 深圳市明微电子股份有限公司 Switching power supply driving chip and switching power supply driving circuit
CN103762969A (en) * 2014-01-17 2014-04-30 东南大学 Anti-noise-interference high-voltage side gate driving circuit
CN103929847A (en) * 2013-10-17 2014-07-16 西安电子工程研究所 Adjustable integrated high-voltage grid electrode pulse modulator
CN104144551A (en) * 2014-03-05 2014-11-12 南京康众光电科技有限公司 High voltage power system capable of controlling pulse emission of cold cathode X-ray apparatus
CN104377946A (en) * 2014-11-18 2015-02-25 汕头市超声仪器研究所有限公司 Inverter driving circuit for X-ray generator
CN106505952A (en) * 2016-10-30 2017-03-15 中国电子科技集团公司第二十九研究所 A kind of Pulsed Solid State power amplifier and method for designing
CN106685370A (en) * 2016-12-27 2017-05-17 江苏博普电子科技有限责任公司 GaN microwave power amplifier protection circuit
US20190052164A1 (en) * 2017-08-09 2019-02-14 L3 Cincinnati Electronics Corporation Magnetically isolated feedback circuits and regulated power supplies incorporating the same
CN110011624A (en) * 2019-04-11 2019-07-12 启攀微电子(上海)有限公司 High integration compound type audio power amplifying circuit structure
US20190229603A1 (en) * 2018-01-19 2019-07-25 Hamilton Sundstrand Corporation Gate driver
CN111049279A (en) * 2020-01-08 2020-04-21 成都天通电子科技有限公司 Rotary wireless power transmission system
CN111130470A (en) * 2019-12-31 2020-05-08 京信通信系统(中国)有限公司 Solid-state microwave generating device
CN111224538A (en) * 2020-04-21 2020-06-02 浙江航芯源集成电路科技有限公司 On-chip isolating switch power supply
CN215378871U (en) * 2021-06-21 2021-12-31 成都天通电子科技有限公司 Power supply circuit for grid feed of microwave pulse power amplifier

Patent Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009278818A (en) * 2008-05-16 2009-11-26 Panasonic Electric Works Co Ltd Switching power supply unit
US20120120342A1 (en) * 2010-04-23 2012-05-17 Rohm Co., Ltd. Control circuit for switching power supply
CN102063145A (en) * 2010-12-30 2011-05-18 东南大学 Self-adaption frequency compensation low voltage-difference linear voltage regulator
CN103391010A (en) * 2013-07-25 2013-11-13 深圳市明微电子股份有限公司 Switching power supply driving chip and switching power supply driving circuit
CN103929847A (en) * 2013-10-17 2014-07-16 西安电子工程研究所 Adjustable integrated high-voltage grid electrode pulse modulator
CN103762969A (en) * 2014-01-17 2014-04-30 东南大学 Anti-noise-interference high-voltage side gate driving circuit
CN104144551A (en) * 2014-03-05 2014-11-12 南京康众光电科技有限公司 High voltage power system capable of controlling pulse emission of cold cathode X-ray apparatus
CN104377946A (en) * 2014-11-18 2015-02-25 汕头市超声仪器研究所有限公司 Inverter driving circuit for X-ray generator
CN106505952A (en) * 2016-10-30 2017-03-15 中国电子科技集团公司第二十九研究所 A kind of Pulsed Solid State power amplifier and method for designing
CN106685370A (en) * 2016-12-27 2017-05-17 江苏博普电子科技有限责任公司 GaN microwave power amplifier protection circuit
US20190052164A1 (en) * 2017-08-09 2019-02-14 L3 Cincinnati Electronics Corporation Magnetically isolated feedback circuits and regulated power supplies incorporating the same
US20190229603A1 (en) * 2018-01-19 2019-07-25 Hamilton Sundstrand Corporation Gate driver
CN110011624A (en) * 2019-04-11 2019-07-12 启攀微电子(上海)有限公司 High integration compound type audio power amplifying circuit structure
CN111130470A (en) * 2019-12-31 2020-05-08 京信通信系统(中国)有限公司 Solid-state microwave generating device
CN111049279A (en) * 2020-01-08 2020-04-21 成都天通电子科技有限公司 Rotary wireless power transmission system
CN111224538A (en) * 2020-04-21 2020-06-02 浙江航芯源集成电路科技有限公司 On-chip isolating switch power supply
CN215378871U (en) * 2021-06-21 2021-12-31 成都天通电子科技有限公司 Power supply circuit for grid feed of microwave pulse power amplifier

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
ZHENG ZENG等: "Comparative Study on Multiple Degrees of Freedom of Gate Drivers for Transient Behavior Regulation of SiC MOSFET", 《IEEE TRANSACTIONS ON POWER ELECTRONICS》 *
张利飞: "微波固态功率放大器的研制", 《中国优秀博硕士学位论文全文数据库(硕士)信息科技辑》 *
甘家梁等: "开关电源补偿器的设计与稳定度分析", 《湖北工程学院学报》 *

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