CN113363405B - Preparation method of display panel, display panel and display device - Google Patents
Preparation method of display panel, display panel and display device Download PDFInfo
- Publication number
- CN113363405B CN113363405B CN202110729515.5A CN202110729515A CN113363405B CN 113363405 B CN113363405 B CN 113363405B CN 202110729515 A CN202110729515 A CN 202110729515A CN 113363405 B CN113363405 B CN 113363405B
- Authority
- CN
- China
- Prior art keywords
- layer
- inorganic layer
- inorganic
- sublayer
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The embodiment of the invention discloses a preparation method of a display panel, the display panel and a display device, wherein the preparation method of the display panel comprises the following steps: providing a driving back plate; forming a light emitting layer on the driving backplane; forming a thin film packaging layer on one side of the light-emitting layer, which is far away from the driving backboard; the thin film packaging layer comprises a first inorganic layer, a second inorganic layer and a third inorganic layer which are formed in sequence; at least one of the first inorganic layer and the third inorganic layer is formed by alternately and cyclically depositing in a thermal atomic layer deposition mode and a plasma-assisted atomic layer deposition mode. According to the technical scheme provided by the embodiment of the invention, when the film layer is formed by alternately and circularly depositing the thermal atomic layer deposition mode and the plasma-assisted atomic layer deposition mode, the characteristics of different atomic layer interface characteristics are utilized, so that the organic light-emitting material and the electrode are prevented from being eroded by water vapor and oxygen in the external environment, and meanwhile, the light transmittance of the film packaging layer and the display effect of the display device are improved.
Description
Technical Field
The embodiment of the invention relates to the technical field of display, in particular to a preparation method of a display panel, the display panel and a display device.
Background
An Organic Light Emitting Diode (OLED) display is a self-luminous display, and compared with a Liquid Crystal Display (LCD), the OLED display does not need a backlight source, so that the OLED display is thinner and lighter, and has the advantages of high brightness, low power consumption, wide viewing angle, high response speed, wide use temperature range, and the like, and is increasingly applied to various high-performance display fields.
In the prior art, a film encapsulation method is often used to ensure that an organic light emitting material and an electrode are not eroded by water Vapor and oxygen in an external environment, the film encapsulation includes an inorganic layer which is stacked, and the film encapsulation is generally formed by stacking a film on the inorganic layer by using Atomic Layer Deposition (ALD), Plasma Enhanced Chemical Vapor Deposition (PECVD), and other devices, but the existing film encapsulation has a problem of low light transmittance, and the display effect of a display device is affected.
Disclosure of Invention
The embodiment of the invention provides a preparation method of a display panel, the display panel and a display device, which are used for improving the light transmittance of a thin film packaging layer and ensuring the display effect of a display device while ensuring that an organic light-emitting material and an electrode are not corroded by water vapor and oxygen in an external environment.
In a first aspect, an embodiment of the present invention provides a method for manufacturing a display panel, including:
providing a driving back plate;
forming a luminescent layer on a driving backboard, wherein the luminescent layer is positioned on one side of the driving backboard;
forming a thin film packaging layer on one side of the light-emitting layer, which is far away from the driving backboard; the thin film packaging layer comprises a first inorganic layer, a second inorganic layer and a third inorganic layer which are sequentially formed; wherein at least one of the first inorganic layer and the third inorganic layer is formed by alternately and cyclically depositing in a thermal atomic layer deposition mode and a plasma-assisted atomic layer deposition mode.
Optionally, the material of the first inorganic layer comprises alumina;
the forming of the first inorganic layer by alternating deposition of a thermal atomic layer deposition method and a plasma-assisted atomic layer deposition method includes:
forming a first inorganic layer sublayer by taking trimethylaluminum and water vapor as reaction precursors in a thermal atomic layer deposition mode;
forming a second inorganic layer sublayer by taking trimethylaluminum and oxygen plasmas as reaction precursors in a plasma-assisted atomic layer mode;
alternately cycling a first inorganic layer sublayer and a second inorganic layer sublayer forming a plurality of layers to form the first inorganic layer.
Optionally, after the forming the first inorganic layer sublayer, the method further includes:
introducing oxygen plasma to treat the ionic bond on the surface of the first inorganic layer sublayer;
after the forming of the second inorganic layer sublayer, the method further comprises:
and introducing oxygen plasma to treat the ionic bond on the surface of the second inorganic layer sublayer.
Optionally, the material of the third inorganic layer comprises alumina;
the forming of the third inorganic layer by alternating deposition in a thermal atomic layer deposition mode and a plasma-assisted atomic layer deposition mode includes:
forming a third inorganic layer sublayer by taking trimethylaluminum and water vapor as reaction precursors in a thermal atomic layer deposition mode;
forming a fourth inorganic layer sublayer by taking trimethylaluminum and oxygen plasmas as reaction precursors in a plasma-assisted atomic layer mode;
alternately cycling a third inorganic layer sublayer and a fourth inorganic layer sublayer forming a plurality of layers to form the third inorganic layer.
Optionally, after the forming the third inorganic layer sublayer, the method further includes:
introducing oxygen plasma to treat the ionic bond on the surface of the third inorganic layer sublayer;
after the forming of the fourth inorganic layer sublayer, the method further comprises:
and introducing oxygen plasma to treat the ionic bond on the surface of the fourth inorganic layer sublayer.
Optionally, the thickness of the first inorganic layer is 30nm to 50 nm; the thickness of the first inorganic sublayer is 3 nm-5 nm; the thickness of the second inorganic sublayer is 3 nm-5 nm;
the thickness of the third inorganic layer is 30 nm-50 nm; the thickness of the third inorganic sublayer is 3 nm-5 nm; the thickness of the fourth inorganic sublayer is 3 nm-5 nm.
Optionally, forming the second inorganic layer comprises:
and forming a second inorganic layer by means of plasma chemical vapor deposition.
Optionally, the material of the second inorganic layer includes silicon nitride, and the thickness of the second inorganic layer is greater than or equal to 1000 nm.
In a second aspect, an embodiment of the present invention provides a display panel, including:
driving the back plate;
the light-emitting layer is positioned on one side of the driving back plate;
a thin film encapsulation layer; the thin film packaging layer is positioned on one side of the light emitting layer, which is far away from the driving back plate;
the thin film packaging layer comprises a first inorganic layer, a second inorganic layer and a third inorganic layer which are sequentially formed; at least one of the first inorganic layer and the third inorganic layer is formed by alternately and cyclically depositing based on a thermal atomic layer deposition mode and a plasma-assisted atomic layer deposition mode.
In a third aspect, an embodiment of the present invention provides a display device, including the display panel according to any one of the second aspects.
The embodiment of the invention provides a preparation method of a display panel, the display panel and a display device, wherein the preparation method of the display panel comprises the following steps: providing a driving back plate; forming a light emitting layer, wherein the light emitting layer is positioned on one side of the driving backboard; forming a thin film packaging layer on one side of the light-emitting layer, which is far away from the driving backboard; the thin film packaging layer comprises a first inorganic layer, a second inorganic layer and a third inorganic layer which are formed in sequence; wherein at least one of the first inorganic layer and the third inorganic layer is formed by alternately and cyclically depositing in a thermal atomic layer deposition mode and a plasma-assisted atomic layer deposition mode. According to the technical scheme provided by the embodiment of the invention, at least one of the first inorganic layer and the third inorganic layer is formed by alternately and circularly depositing in a thermal atomic layer deposition mode and a plasma-assisted atomic layer deposition mode, and the water and oxygen blocking performance of the first inorganic layer and the third inorganic layer is ensured by utilizing the characteristics of different forming process modes and different atomic layer interface characteristics. Therefore, the inorganic materials of the first inorganic layer may be the same and are all set to be materials with higher light transmittance; the inorganic materials in the third inorganic layer may be the same, and are all provided as materials having high light transmittance. That is to say, the technical scheme provided by the embodiment of the invention can ensure that the organic light-emitting material and the electrode are not corroded by water vapor and oxygen in the external environment, improve the performance of blocking water and oxygen, and simultaneously improve the light transmittance of the thin film packaging layer and ensure the display effect of the display device.
Drawings
Fig. 1 is a schematic structural diagram of a display panel provided in the prior art;
FIG. 2 is a schematic diagram of the structure of at least one of the first inorganic layer and the third inorganic layer in the structure shown in FIG. 1;
fig. 3 is a flowchart of a method for manufacturing a display panel according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a display panel according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a first inorganic layer provided in an embodiment of the present invention;
fig. 6 is a flowchart of a method for forming a first inorganic layer according to an embodiment of the present invention;
fig. 7 is a schematic structural diagram of a third inorganic layer provided in an embodiment of the present invention;
fig. 8 is a flow chart of a method of forming a third inorganic layer provided by an embodiment of the present invention;
fig. 9 is a schematic structural diagram of a display device according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
As background art, an OLED display is a self-luminous display, and has advantages of high brightness, low power consumption, wide viewing angle, high response speed, wide use temperature range, and the like, and is increasingly used in various high-performance display fields. A thin film encapsulation method is often used to protect the organic light emitting material and the electrode from the erosion of water vapor and oxygen in the external environment. Fig. 1 is a schematic structural diagram of a display panel provided in the prior art, and fig. 2 is a schematic structural diagram of at least one of a first inorganic layer and a third inorganic layer in the structure shown in fig. 1, and referring to fig. 1 and fig. 2, the display panel includes a driving backplane 100, and a light emitting layer 200 and a thin film encapsulation layer 300 sequentially disposed on the driving backplane 100. The thin film encapsulation layer 300 of the conventional Micro OLED device generally adopts ALD, PECVD and ALD equipment to sequentially form a first inorganic layer 310, a second inorganic layer 320 and a third inorganic layer 330 on the light emitting layer 200 in a coating and stacking manner. In the case of forming the first inorganic layer 310 or the third inorganic layer 330 by the thermal ALD method, the first inorganic layer and the third inorganic layer are formed by depositing aluminum oxide and titanium oxide on each other several times in order to improve defects between atomic layers. Referring to fig. 2, the film layers formed by aluminum oxide and titanium oxide are an aluminum oxide material layer 1 and a titanium oxide material layer 2, respectively. The surface defects of the interface of each layer can be improved by the mode of multiple superposition deposition of aluminum oxide and titanium oxide, so that the water and oxygen blocking effect of the thin film packaging layer is improved. According to research, under the condition of the same plating thickness, the performance of blocking water and oxygen of the first inorganic layer 310 (or the third inorganic layer 330) formed by overlapping alumina and titanium oxide is more than 100 times that of the first inorganic layer 310 (or the third inorganic layer 330) formed by thermally plating single alumina, but the light transmittance of titanium oxide is low, and the light transmittance of the laminated layer is only about 88%, so that the display effect of the display device is influenced.
In view of the above, an embodiment of the present invention provides a method for manufacturing a display panel, and fig. 3 is a flowchart of the method for manufacturing a display panel according to the embodiment of the present invention, and with reference to fig. 3, the method includes:
and S110, providing a driving back plate.
Specifically, fig. 4 is a schematic structural diagram of a display panel according to an embodiment of the present invention, and referring to fig. 4, the driving backplane 10 refers to a film structure that can provide driving signals for the display panel and has buffering, protecting, or supporting functions. The driving back plate 10 includes a display area and a non-display area, the display area has a light emitting layer 20, so as to display a picture, and the area corresponding to the non-display area does not display the picture. The driving backplate 10 includes a substrate 11, and the substrate 11 may be flexible and may be formed of any suitable insulating material having flexibility. For example, the flexible substrate may be formed of a polymer material such as Polyimide (PI), Polycarbonate (PC), Polyethersulfone (PES), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), Polyarylate (PAR), or glass Fiber Reinforced Plastic (FRP). The buffer layer is located on the substrate 11, and covers the entire upper surface of the substrate 11. In one embodiment, the buffer layer includes an inorganic layer or an organic layer. For example, the buffer layer may be formed of a material selected from an inorganic material such as silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy), aluminum oxide (AlOx), aluminum nitride (AlNx), or the like, or an organic material such as acryl (acryl), Polyimide (PI), polyester, or the like. The buffer layer blocks oxygen and moisture, prevents diffusion of moisture or impurities through the base plate, and provides a flat surface on the upper surface of the flexible substrate. The driving back plate 10 further includes a driving circuit 12 formed of Thin-Film transistors (TFTs), and the driving circuit 12 is located on the buffer layer.
And S120, forming a light-emitting layer on the driving back plate, wherein the light-emitting layer is positioned on one side of the driving back plate.
Specifically, referring to fig. 4, the light emitting layer 20 is formed on one side of the driving backplane 10. The light emitting layer 20 is formed on the driving circuit 12 driving the back sheet 10, and the light emitting layer 20 may include a plurality of organic light emitting structures. The organic light emitting structure generally includes a first electrode 21, a light emitting material layer 22, and a second electrode 23. In order to form the organic light emitting structure, the first electrode 21 (anode) is electrically connected to the source or drain electrode through a contact hole. The first electrode 21 serves as an anode and may be formed of various conductive materials. The light emitting material layer 22 is positioned on the first electrode 21, and the light emitting material layer 22 may be formed of a low molecular weight organic material or a high molecular weight organic material. The light emitting material layer 22 may further include at least one of a Hole Injection Layer (HIL), a Hole Transport Layer (HTL), an Electron Transport Layer (ETL), and an Electron Injection Layer (EIL). A second electrode (serving as a cathode of the organic light emitting device OLED) is positioned on the light emitting material layer. The second electrode 23 may be formed as a transparent electrode, similar to the first electrode 21. The first electrode 21 and the second electrode 23 are insulated from each other by the light emitting material layer 22. If a voltage is applied between the first electrode 21 and the second electrode 23, the luminescent material layer 22 emits visible light, thereby realizing an image that can be recognized by a user.
S130, forming a thin film packaging layer on one side, far away from the driving backboard, of the light emitting layer; the thin film packaging layer comprises a first inorganic layer, a second inorganic layer and a third inorganic layer which are formed in sequence; wherein at least one of the first inorganic layer and the third inorganic layer is formed by alternately and cyclically depositing in a thermal atomic layer deposition mode and a plasma-assisted atomic layer deposition mode.
Specifically, referring to fig. 4, a thin film encapsulation layer 30 is formed on the side of the light emitting layer 20 away from the driving backplane 10, and the thin film encapsulation layer 30 covers the light emitting layer 20. The thin film encapsulation layer 30 serves to protect the light emitting layer 20 and other thin layers from external moisture, oxygen, and the like. The thin film encapsulation layer 30 includes a first inorganic layer 31, a second inorganic layer 32, and a third inorganic layer 33 formed in this order. The second inorganic layer 32 may be formed by plasma chemical vapor deposition. The material of the second inorganic layer 32 includes silicon nitride, and may also be an inorganic material such as silicon oxide, silicon oxynitride, etc., which has a relatively good ability to block water and oxygen and also has a relatively high visible light transmittance. At least one of the first inorganic layer 31 and the third inorganic layer 33 is formed by alternately and cyclically depositing in a thermal atomic layer deposition manner and a plasma-assisted atomic layer deposition manner, and in order to ensure the light transmittance of the display panel, the inorganic material formed by alternately and cyclically depositing at least one of the first inorganic layer 31 and the third inorganic layer 33 is a material with high light transmittance. For example, the inorganic material of at least one of the first inorganic layer 31 and the third inorganic layer 33 is alumina having high light transmittance.
Conventionally, when the first inorganic layer or the third inorganic layer is formed by the thermal ALD method, in order to improve defects between atomic layers, aluminum oxide and titanium oxide are deposited by stacking a plurality of times. Under the condition of the same plating thickness, the performance of blocking water and oxygen of the first inorganic layer (or the third inorganic layer) formed by overlapping alumina and titanium oxide is more than 100 times that of the first inorganic layer (or the third inorganic layer) formed by plating single alumina by a thermal method. However, titanium oxide has a relatively low light transmittance relative to aluminum oxide, and the light transmittance of the laminate is only about 88%, which affects the display effect of the display device. According to the technical scheme provided by the embodiment of the invention, the inorganic materials in the first inorganic layer and the third inorganic layer can be materials with high light transmittance, such as alumina. At least one of the first inorganic layer and the third inorganic layer is formed through alternate and cyclic deposition in a thermal atomic layer deposition mode and a plasma-assisted atomic layer deposition mode, and the water and oxygen blocking performance of the first inorganic layer and the third inorganic layer is guaranteed by utilizing the characteristics of different forming process modes and different atomic layer interface characteristics. That is to say, the technical scheme provided by the embodiment of the invention can ensure that the organic light-emitting material and the electrode are not corroded by water vapor and oxygen in the external environment, improve the performance of blocking water and oxygen, and simultaneously improve the light transmittance of the thin film packaging layer and ensure the display effect of the display device.
Optionally, the material of the first inorganic layer comprises alumina;
the forming of the first inorganic layer by alternating deposition of a thermal atomic layer deposition method and a plasma-assisted atomic layer deposition method includes:
forming a first inorganic layer sublayer by taking trimethylaluminum and water vapor as reaction precursors in a thermal atomic layer deposition mode;
forming a second inorganic layer sublayer by taking trimethylaluminum and oxygen plasmas as reaction precursors in a plasma-assisted atomic layer mode;
the first inorganic layer sub-layer and the second inorganic layer sub-layer forming the plurality of layers are alternately cycled to form the first inorganic layer.
Specifically, fig. 5 is a schematic structural diagram of a first inorganic layer according to an embodiment of the present invention, and referring to fig. 4 to 5, a material of the first inorganic layer 31 includes aluminum oxide, and a first inorganic layer sublayer 311 is formed by thermal atomic layer deposition; the second inorganic layer sub-layer 312 is formed by plasma assisted atomic layer deposition. And forming a plurality of first inorganic layer sub-layers 311 and second inorganic layer sub-layers 312 by alternately and cyclically depositing in an atomic layer deposition mode and a plasma-assisted atomic layer deposition mode to form the first inorganic layer 31. It is understood that, except for the inorganic layer sublayer closest to the light-emitting layer 20 and the inorganic layer sublayer farthest from the light-emitting layer 20, both sides of the adjacent second inorganic layer sublayer 312 are the first inorganic layer sublayers 311, and both sides of the adjacent first inorganic layer sublayers 311 are the second inorganic layer sublayers 312.
The reaction precursor for forming the first inorganic layer sublayer 311 by thermal atomic layer deposition may be trimethylaluminum and water vapor. And heating the reaction precursor trimethylaluminum to a gaseous state, and enabling the gaseous reaction precursor trimethylaluminum to enter the reaction chamber and be deposited on the light-emitting element layer. Inert gas is then introduced into the reaction chamber to expel undeposited gaseous trimethylaluminum and other reaction products. Another reaction precursor, i.e., water vapor as a reaction gas, is introduced into the reaction chamber, so as to generate the first inorganic layer 311. After the reaction, the excess precursor and the by-product are removed from the cavity by using inert gas. Wherein, the reaction temperature of the reaction chamber should be controlled within a range of less than 100 ℃ to avoid damage to the display panel due to overhigh temperature.
Plasma assisted atomic layer deposition is a combination of plasma assisted and ALD techniques that dissociate monomers or reaction gases by plasma to provide radicals required for the reaction, instead of heating as in remote ALD techniques. The reactive precursors for forming the second inorganic layer sublayer 312 by plasma assisted atomic layer deposition may be trimethylaluminum and oxygen plasma. It should be noted that, in order to avoid that plasma affects the light-emitting material in the light-emitting layer 20 when the second inorganic layer sub-layer 312 is formed by plasma assisted atomic layer deposition, the first inorganic layer sub-layer 311 is formed by thermal atomic layer deposition first according to the technical solution provided in the embodiment of the present invention. That is, in the first inorganic layer, the layer closest to the light emitting layer 20 is the first inorganic layer sublayer 311 formed by thermal atomic layer deposition.
Optionally, after forming the first inorganic layer sublayer, the method further includes:
introducing oxygen plasma to treat the ionic bond on the surface of the first inorganic layer sublayer;
after forming the second inorganic layer sublayer, the method further comprises the following steps:
and introducing oxygen plasma to treat the ionic bond on the surface of the second inorganic layer sublayer.
Specifically, after the first inorganic layer sublayer is formed by thermal atomic layer deposition, oxygen plasma can be introduced to treat methyl bonds on the surface of the alumina, so that defects on the surface of the first inorganic layer sublayer can be reduced. And after the second inorganic layer sublayer is formed in a plasma-assisted atomic layer deposition mode, oxygen plasma can be introduced to treat methyl bonds on the surface of the aluminum oxide, so that the defects on the surface of the second inorganic layer sublayer can be reduced.
In summary, fig. 6 is a flowchart of a method for forming a first inorganic layer according to an embodiment of the present invention, and referring to fig. 6, the forming the first inorganic layer by alternating deposition of a thermal atomic layer deposition method and a plasma-assisted atomic layer deposition method includes:
s1311, forming a first inorganic layer sub-layer in a thermal atomic layer deposition mode by taking trimethyl aluminum and water vapor as reaction precursors.
S1312, introducing oxygen plasma to treat the ionic bonds on the surface of the first inorganic layer sublayer.
And S1313, forming a second inorganic layer sublayer in a plasma-assisted atomic layer mode by taking trimethylaluminum and oxygen plasmas as reaction precursors.
And S1314, introducing oxygen plasma to treat the ionic bond on the surface of the second inorganic layer sublayer.
And S1315, alternately cycling the first inorganic layer sub-layer and the second inorganic layer sub-layer to form a plurality of layers to form the first inorganic layer.
Illustratively, the surface of the alumina is treated for 1-300s by thermal ALD (atomic layer deposition) with TMA and H2O and cyclic deposition of 1-20 nm alumina (the first inorganic layer sublayer) followed by oxygen plasma at a flow rate of 0-2000 sccm. And introducing Plasma of TMA and oxygen by using Plasma ALD (atomic layer deposition), circularly depositing 1-20 nm of alumina (a second inorganic layer sublayer), and introducing oxygen Plasma at the introduction flow rate of 0-2000sccm to treat the surface of the alumina for 1-300 s. And circulating the processes to ensure that the total thickness of the film layer of the whole first inorganic layer ranges from 2nm to 200 nm.
Optionally, the material of the third inorganic layer comprises alumina;
the forming of the third inorganic layer by alternating deposition in a thermal atomic layer deposition mode and a plasma-assisted atomic layer deposition mode includes:
forming a third inorganic layer sublayer by taking trimethylaluminum and water vapor as reaction precursors in a thermal atomic layer deposition mode;
forming a fourth inorganic layer sublayer by taking trimethylaluminum and oxygen plasmas as reaction precursors in a plasma-assisted atomic layer mode;
and alternately cycling the third inorganic layer sub-layer and the fourth inorganic layer sub-layer forming the plurality of layers to form the third inorganic layer.
Specifically, fig. 7 is a schematic structural diagram of a third inorganic layer according to an embodiment of the present invention, and referring to fig. 7 and 4, a material of the third inorganic layer 33 includes aluminum oxide, and a third inorganic layer sub-layer 331 is formed by thermal atomic layer deposition; the fourth inorganic layer sublayer 332 is formed by plasma assisted atomic layer deposition. And forming a plurality of third inorganic layer sub-layers 331 and fourth inorganic layer sub-layers 332 by alternately and cyclically depositing in an atomic layer deposition mode and a plasma-assisted atomic layer deposition mode to form the third inorganic layer 33. It is understood that, in addition to the inorganic layer sublayer closest to the light-emitting layer 20 and the inorganic layer sublayer farthest from the light-emitting layer 20, both sides of the adjacent fourth inorganic layer sublayer 332 are the third inorganic layer sublayer 331, and both sides of the adjacent third inorganic layer sublayer 331 are the fourth inorganic layer sublayer 332.
The reaction precursor for forming the third inorganic layer sublayer 331 by thermal atomic layer deposition may be trimethylaluminum and water vapor. And heating the reaction precursor trimethylaluminum to a gaseous state, and allowing the gaseous reaction precursor trimethylaluminum to enter the reaction chamber and deposit on the light-emitting element layer. Inert gas is then introduced into the reaction chamber to expel undeposited gaseous trimethylaluminum and other reaction products. Another reaction precursor, i.e., water vapor as a reaction gas, is introduced into the reaction chamber, so as to generate the third inorganic layer sublayer 331. After the reaction, the excess precursor and the by-product are removed from the cavity by using inert gas. Wherein, the reaction temperature of the reaction chamber should be controlled within a range of less than 100 ℃ to avoid damage to the display panel due to overhigh temperature. Plasma assisted atomic layer deposition is a combination of plasma assisted and ALD techniques that dissociate monomers or reaction gases by plasma to provide radicals required for the reaction, instead of heating as in remote ALD techniques. The reactive precursors used to form the fourth inorganic layer sublayer 332 by plasma assisted atomic layer deposition can be trimethylaluminum and oxygen plasma.
Optionally, after forming the third inorganic layer sublayer, the method further includes:
introducing oxygen plasma to treat the ionic bond on the surface of the third inorganic layer sublayer;
after the fourth inorganic layer sublayer is formed, the method further comprises the following steps:
and introducing oxygen plasma to treat the ionic bond on the surface of the fourth inorganic layer sublayer.
Specifically, after the third inorganic layer sublayer 331 is formed by thermal atomic layer deposition, oxygen plasma may be introduced to treat the methyl bonds on the surface of the alumina, so that defects on the surface of the third inorganic layer sublayer 331 may be reduced. Moreover, after the fourth inorganic layer sublayer 332 is formed by a plasma-assisted atomic layer deposition method, oxygen plasma can be introduced to treat methyl bonds on the surface of the alumina, so that defects on the surface of the fourth inorganic layer sublayer 332 can be reduced.
In summary, fig. 8 is a flowchart of a method for forming a third inorganic layer according to an embodiment of the present invention, and referring to fig. 8, the forming the third inorganic layer by alternately depositing a thermal atomic layer deposition method and a plasma-assisted atomic layer deposition method includes:
s1321, forming a third inorganic layer sublayer by taking trimethylaluminum and water vapor as reaction precursors in a thermal atomic layer deposition mode.
S1322, introducing oxygen plasma to process the ionic bond on the surface of the third inorganic layer sublayer.
S1323, forming a fourth inorganic layer sublayer by using trimethylaluminum and oxygen plasma as reaction precursors in a plasma-assisted atomic layer mode.
And S1324, introducing oxygen plasma to treat the ionic bond on the surface of the fourth inorganic layer sublayer.
And S1325, alternately and circularly forming a plurality of third inorganic layer sub-layers and fourth inorganic layer sub-layers to form a third inorganic layer.
Illustratively, the surface of the alumina (the third inorganic layer sublayer) is treated by cyclic deposition of 1-20 nm alumina (the third inorganic layer sublayer) by thermal ALD through TMA and H2O and oxygen plasma at a flow rate of 0-2000sccm for 1-300 s. And introducing Plasma of TMA and oxygen by using Plasma ALD (atomic layer deposition), circularly depositing alumina (a fourth inorganic layer sublayer) with the thickness of 1-20 nm, and introducing oxygen Plasma at the introduction flow rate of 0-2000sccm to treat the surface of the alumina for 1-300 s. And circulating the processes to ensure that the total thickness of the film layer of the whole third inorganic layer ranges from 2nm to 200 nm.
Optionally, the thickness of the first inorganic layer is 30nm to 50 nm; the thickness of the first inorganic sublayer is 3 nm-5 nm; the thickness of the second inorganic sublayer is 3 nm-5 nm;
the thickness of the third inorganic layer is 30 nm-50 nm; the thickness of the third inorganic sublayer is 3 nm-5 nm; the thickness of the fourth inorganic sublayer is 3 nm-5 nm;
the second inorganic layer has a thickness greater than or equal to 1000 nm.
Specifically, the first inorganic layer has too large thickness, which causes large stress of the inorganic layer, so that the first inorganic layer is easy to break; the thickness of the first inorganic layer is too small, which weakens the water and oxygen resistance of the first inorganic layer. According to the technical scheme provided by the embodiment of the invention, the thickness of the first inorganic layer is set to be 30-50 nm, so that the first inorganic layer can be prevented from being broken while the water and oxygen resistance of the first inorganic layer is ensured. In addition, the thickness of the first inorganic sublayer is 3nm to 5 nm; the thickness of the second inorganic sublayer is 3 nm-5 nm, the number of the inorganic sublayer layers which are alternately arranged in the first inorganic layer can be increased, and therefore the water and oxygen blocking performance of the first inorganic layer can be improved. Similarly, the third inorganic layer has too large thickness, which causes the stress of the inorganic layer to be large, so that the third inorganic layer is easy to break; the thickness of the third inorganic layer is too small, which weakens the water and oxygen resistance of the third inorganic layer. The thickness of the third inorganic layer is 30 nm-50 nm, so that the third inorganic layer can be prevented from being broken while the water and oxygen resistance of the third inorganic layer is ensured. The thickness of the third inorganic sublayer is 3 nm-5 nm; the thickness of the fourth inorganic sublayer is 3 nm-5 nm, the number of the inorganic sublayer layers which are alternately arranged in the third inorganic layer can be increased, and therefore the water and oxygen blocking performance of the third inorganic layer can be improved. The technical scheme provided by the embodiment of the invention can improve the light transmittance to more than 95% on the premise of ensuring the water and oxygen resistance effect of the film.
An embodiment of the present invention further provides a display panel formed by the method for manufacturing a display panel according to any of the above embodiments, and referring to fig. 4, the display panel includes:
a driving back plate 10;
a light emitting layer 20, the light emitting layer 20 being located at one side of the driving backplane 10;
a thin film encapsulation layer 30; the thin film packaging layer 30 is positioned on one side of the light-emitting layer 20 far away from the driving backboard 10;
the thin film encapsulation layer 30 includes a first inorganic layer 31, a second inorganic layer 32, and a third inorganic layer 33 formed in sequence; at least one of the first inorganic layer 31 and the third inorganic layer 33 is formed by alternately and cyclically depositing based on a thermal atomic layer deposition method and a plasma-assisted atomic layer deposition method.
Specifically, the driving backplane 10 refers to a film structure that can provide driving signals for the display panel and play roles of buffering, protecting, supporting, and the like. The driving back plate 10 includes a display area and a non-display area, the display area has a light emitting layer 20, so as to display a picture, and the area corresponding to the non-display area does not display the picture. The driving backplate 10 includes a substrate 11, and the substrate 11 may be flexible and may be formed of any suitable insulating material having flexibility. The driving back plate 10 may further include a buffer layer on the flexible substrate, the buffer layer covering the entire upper surface of the flexible substrate. In one embodiment, the buffer layer includes an inorganic layer or an organic layer. For example, the buffer layer may be formed of a material selected from an inorganic material such as silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy), aluminum oxide (AlOx), aluminum nitride (AlNx), or the like, or an organic material such as acryl (acryl), Polyimide (PI), polyester, or the like. The buffer layer blocks oxygen and moisture, prevents diffusion of moisture or impurities through the substrate, and provides a flat surface on the upper surface of the flexible substrate. The driving back plate 10 further includes a driving circuit 12 formed of thin film transistors on the buffer layer.
The light emitting layer 20 is located on one side of the driving backplane 10. The light emitting layer 20 may include a plurality of organic light emitting structures. The organic light emitting structure generally includes a first electrode 21, a light emitting material layer 22, and a second electrode 23. In order to form the organic light emitting structure, the first electrode 21 (anode) is electrically connected to the source or drain electrode through a contact hole. The first electrode 21 serves as an anode and may be formed of various conductive materials. The light emitting material layer 22 is positioned on the first electrode 21, and the light emitting material layer 22 may be formed of a low molecular weight organic material or a high molecular weight organic material. The light emitting material layer 22 may further include at least one of a Hole Injection Layer (HIL), a Hole Transport Layer (HTL), an Electron Transport Layer (ETL), and an Electron Injection Layer (EIL). A second electrode (serving as a cathode of the organic light emitting device OLED) is positioned on the light emitting material layer. The second electrode 23 may be formed as a transparent electrode, similar to the first electrode 21. The first electrode 21 and the second electrode 23 are insulated from each other by the light emitting material layer 22. If a voltage is applied between the first electrode 21 and the second electrode 23, the luminescent material layer 22 emits visible light, thereby realizing an image that can be recognized by a user.
The light-emitting layer 20 further comprises a thin film encapsulation layer 30 on the side away from the driving backplane 10, and the thin film encapsulation layer 30 covers the light-emitting layer 20. The thin film encapsulation layer 30 serves to protect the light emitting layer 20 and other thin layers from external moisture, oxygen, and the like. The thin film encapsulation layer 30 includes a first inorganic layer 31, a second inorganic layer 32, and a third inorganic layer 33 formed in this order; wherein the second inorganic layer 32 may be formed by means of plasma chemical vapor deposition. The material of the second inorganic layer 32 includes silicon nitride, and may also be an inorganic material such as silicon oxide, silicon oxynitride, etc., which has a relatively good ability to block water and oxygen and also has a relatively high visible light transmittance. At least one of the first inorganic layer 31 and the third inorganic layer 33 is formed by alternately and cyclically depositing in a thermal atomic layer deposition manner and a plasma-assisted atomic layer deposition manner, and in order to ensure the light transmittance of the display panel, the inorganic material formed by alternately and cyclically depositing at least one of the first inorganic layer 31 and the third inorganic layer 33 is a material with high light transmittance. For example, the inorganic material of at least one of the first inorganic layer 31 and the third inorganic layer 33 is alumina having high light transmittance.
Conventionally, when the first inorganic layer or the third inorganic layer is formed by the thermal ALD method, in order to improve defects between atomic layers, aluminum oxide and titanium oxide are deposited by stacking a plurality of times. Under the condition of the same plating thickness, the performance of blocking water and oxygen of the first inorganic layer (or the third inorganic layer) formed by overlapping alumina and titanium oxide is more than 100 times that of the first inorganic layer (or the third inorganic layer) formed by plating single alumina by a thermal method. However, titanium oxide has a relatively low light transmittance relative to aluminum oxide, and the light transmittance of the laminate is only about 88%, which affects the display effect of the display device. According to the technical scheme provided by the embodiment of the invention, at least one of the first inorganic layer and the third inorganic layer is formed by alternately and circularly depositing in a thermal atomic layer deposition mode and a plasma-assisted atomic layer deposition mode, and the characteristics of different forming process modes and different atomic layer interface characteristics are utilized, so that the organic light-emitting material and the electrode can be prevented from being corroded by water vapor and oxygen in the external environment, and the performance of blocking water and oxygen is improved; meanwhile, the light transmittance of the film packaging layer can be improved, and the display effect of the display device is ensured.
Fig. 9 is a schematic structural diagram of a display device according to an embodiment of the present invention, and referring to fig. 9, the display panel according to any of the embodiments above is included, and has the same technical effects, and details are not repeated here.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (10)
1. A method for manufacturing a display panel, comprising:
providing a driving back plate;
forming a luminescent layer on the driving backboard, wherein the luminescent layer is positioned on one side of the driving backboard;
forming a thin film packaging layer on one side of the light-emitting layer, which is far away from the driving backboard; the thin film packaging layer comprises a first inorganic layer, a second inorganic layer and a third inorganic layer which are sequentially formed; wherein at least one of the first inorganic layer and the third inorganic layer is formed by alternately and cyclically depositing in a thermal atomic layer deposition mode and a plasma-assisted atomic layer deposition mode.
2. The method for manufacturing a display panel according to claim 1, wherein a material of the first inorganic layer comprises alumina;
the forming of the first inorganic layer by alternating deposition by a thermal atomic layer deposition method and a plasma-assisted atomic layer deposition method includes:
forming a first inorganic layer sublayer by taking trimethylaluminum and water vapor as reaction precursors in a thermal atomic layer deposition mode;
forming a second inorganic layer sublayer by taking trimethylaluminum and oxygen plasmas as reaction precursors in a plasma-assisted atomic layer mode;
alternately cycling a first inorganic layer sublayer and a second inorganic layer sublayer forming a plurality of layers to form the first inorganic layer.
3. The method for manufacturing a display panel according to claim 2,
after the forming the first inorganic layer sublayer, the method further comprises:
introducing oxygen plasma to treat the ionic bond on the surface of the first inorganic layer sublayer;
after the forming of the second inorganic layer sublayer, the method further comprises:
and introducing oxygen plasma to treat the ionic bond on the surface of the second inorganic layer sublayer.
4. The method according to claim 2, wherein a material of the third inorganic layer comprises alumina;
the forming of the third inorganic layer by alternating deposition in a thermal atomic layer deposition mode and a plasma-assisted atomic layer deposition mode includes:
forming a third inorganic layer sublayer by taking trimethylaluminum and water vapor as reaction precursors in a thermal atomic layer deposition mode;
forming a fourth inorganic layer sublayer by taking trimethylaluminum and oxygen plasmas as reaction precursors in a plasma-assisted atomic layer mode;
alternately cycling a third inorganic layer sublayer and a fourth inorganic layer sublayer forming a plurality of layers to form the third inorganic layer.
5. The method for manufacturing a display panel according to claim 4,
after the forming of the third inorganic layer sublayer, the method further comprises:
introducing oxygen plasma to treat the ionic bond on the surface of the third inorganic layer sublayer;
after the forming of the fourth inorganic layer sublayer, the method further comprises:
and introducing oxygen plasma to treat the ionic bond on the surface of the fourth inorganic layer sublayer.
6. The method for manufacturing a display panel according to claim 4, wherein the thickness of the first inorganic layer is 30nm to 50 nm; the thickness of the first inorganic sublayer is 3 nm-5 nm; the thickness of the second inorganic sublayer is 3 nm-5 nm;
the thickness of the third inorganic layer is 30 nm-50 nm; the thickness of the third inorganic sublayer is 3 nm-5 nm; the thickness of the fourth inorganic sublayer is 3 nm-5 nm.
7. The method for manufacturing a display panel according to claim 1, wherein the forming of the second inorganic layer comprises:
and forming a second inorganic layer by means of plasma chemical vapor deposition.
8. The method according to claim 7, wherein a material of the second inorganic layer comprises silicon nitride, and a thickness of the second inorganic layer is greater than or equal to 1000 nm.
9. A display panel, comprising:
driving the back plate;
the light-emitting layer is positioned on one side of the driving back plate;
a thin film encapsulation layer; the thin film packaging layer is positioned on one side of the light emitting layer, which is far away from the driving back plate;
the thin film packaging layer comprises a first inorganic layer, a second inorganic layer and a third inorganic layer which are sequentially formed; at least one of the first inorganic layer and the third inorganic layer is formed by alternately and cyclically depositing based on a thermal atomic layer deposition mode and a plasma-assisted atomic layer deposition mode.
10. A display device characterized by comprising the display panel according to claim 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110729515.5A CN113363405B (en) | 2021-06-29 | 2021-06-29 | Preparation method of display panel, display panel and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110729515.5A CN113363405B (en) | 2021-06-29 | 2021-06-29 | Preparation method of display panel, display panel and display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113363405A CN113363405A (en) | 2021-09-07 |
| CN113363405B true CN113363405B (en) | 2022-06-03 |
Family
ID=77537122
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110729515.5A Active CN113363405B (en) | 2021-06-29 | 2021-06-29 | Preparation method of display panel, display panel and display device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113363405B (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG11201405416UA (en) * | 2011-04-07 | 2014-11-27 | Picosun Oy | Atomic layer deposition with plasma source |
| CN103441214B (en) * | 2013-08-02 | 2015-10-21 | 浙江大学 | A kind of preparation method of resistance-variable storing device |
| US11732356B2 (en) * | 2019-07-29 | 2023-08-22 | Applied Materials, Inc. | Multilayer encapsulation stacks by atomic layer deposition |
| KR20220042442A (en) * | 2019-08-06 | 2022-04-05 | 램 리써치 코포레이션 | Thermal atomic layer deposition of silicon-containing films |
-
2021
- 2021-06-29 CN CN202110729515.5A patent/CN113363405B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN113363405A (en) | 2021-09-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20220018022A1 (en) | Multilayer encapsulation thin-film | |
| WO2017049627A1 (en) | Package structure of a flexible organic electroluminescent device, and flexible display apparatus | |
| KR102136790B1 (en) | Flexible display device and the fabrication method thereof | |
| JP5532557B2 (en) | Gas barrier sheet, gas barrier sheet manufacturing method, sealing body, and organic EL display | |
| US20040113542A1 (en) | Low temperature process for passivation applications | |
| US20160365540A1 (en) | Thin film package structure, manufacturing method and organic light emitting apparatus having the structure | |
| TW200535262A (en) | Method and apparatus of depositing low temperature inorganic films on plastic substrates | |
| US20130126915A1 (en) | Flexible active device array substrate and organic electroluminescent device having the same | |
| US8975534B2 (en) | Flexible base material and flexible electronic device | |
| US9324968B2 (en) | Method of manufacturing an organic light emitting display device | |
| JP2005235743A (en) | Composite material article having diffusion barrier and element incorporating it | |
| KR20160041158A (en) | Apparatus for manufacturing display apparatus and method of manufacturing display apparatus | |
| EP4380337A1 (en) | Packaging structure, display panel, and method for manufacturing display panel | |
| CN100444699C (en) | Two-side display apparatus | |
| US11118266B2 (en) | Method for depositing protection film of light-emitting element | |
| CN113363405B (en) | Preparation method of display panel, display panel and display device | |
| US20150108442A1 (en) | Organic light-emitting apparatus and method of manufacturing the same | |
| WO2020252995A1 (en) | Display panel and preparation method therefor | |
| KR102603870B1 (en) | Encapsulating Structure, Organic light emitting display having the encapsulating structure, and method of manufacturing thereof | |
| CN206490095U (en) | A kind of display panel and display device | |
| CN101510587A (en) | Flexible passive organic electroluminescent device and method for preparing the same | |
| KR102396457B1 (en) | Flexible Substrate, Flexible Display Device Using the Same and Method for Manufacturing the Same | |
| Chen | Realizing Thin‐Film Encapsulation's Benefits for Large‐Scale OLED Panels | |
| US10211427B2 (en) | Display device and apparatus and method for manufacturing the same | |
| Kim et al. | Thin film passivation characteristics in OLED using in-situ passivation |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |