CN113362753B - Display panel and display device - Google Patents
Display panel and display device Download PDFInfo
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- CN113362753B CN113362753B CN202110612900.1A CN202110612900A CN113362753B CN 113362753 B CN113362753 B CN 113362753B CN 202110612900 A CN202110612900 A CN 202110612900A CN 113362753 B CN113362753 B CN 113362753B
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- 238000006243 chemical reaction Methods 0.000 abstract description 4
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
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- MRPWWVMHWSDJEH-UHFFFAOYSA-N antimony telluride Chemical compound [SbH3+3].[SbH3+3].[TeH2-2].[TeH2-2].[TeH2-2] MRPWWVMHWSDJEH-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- FBGGJHZVZAAUKJ-UHFFFAOYSA-N bismuth selenide Chemical compound [Se-2].[Se-2].[Se-2].[Bi+3].[Bi+3] FBGGJHZVZAAUKJ-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/2003—Display of colours
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention discloses a display panel and a display device, wherein the display panel comprises a substrate, a light-emitting device layer positioned on one side of the substrate and a thermoelectric generation layer positioned between the substrate and the light-emitting device layer, the thermoelectric generation layer comprises a first electric conduction heat conduction layer, a current generation layer and a second electric conduction heat conduction layer which are arranged from the substrate to the direction of the light-emitting device layer, and the current generation layer is used for generating current according to the temperature difference between the first electric conduction heat conduction layer and the second electric conduction heat conduction layer to generate the flow of current carriers so as to form a current and outputting the current to a structure to be supplied to the display panel. The thermoelectric generation layer of the embodiment of the invention generates electric energy by utilizing the temperature difference at two sides, realizes the conversion of heat energy into electric energy, absorbs the heat of the light-emitting device layer to reduce the temperature of the display panel during display, and reduces the power consumption of the display panel by supplying the electric energy converted by the heat of the thermoelectric generation layer to a structure to be powered of the display panel.
Description
Technical Field
The embodiment of the invention relates to the technical field of display, in particular to a display panel and a display device.
Background
The display panel, especially the silicon-based display panel, has very rapid development due to excellent characteristics of brightness, rich colors, low driving voltage, high response speed, low power consumption and the like.
Currently, when a display panel displays, the temperature of the screen body of the display panel is high, especially a silicon-based display panel. Silicon-based display panels generally adopt a device structure of a white light emitting layer and a color filter, but the transmittance of the color filter is lower, so that the device needs higher brightness and power consumption. Because of the higher brightness, the screen body itself will have higher temperature and power consumption will be greatly increased.
Disclosure of Invention
The invention provides a display panel and a display device, which are used for reducing the temperature of the display panel and the power consumption of a power supply connected with the display panel.
In a first aspect, an embodiment of the present invention provides a display panel, including:
a substrate;
a light emitting device layer located at one side of the substrate, the light emitting device layer including a plurality of light emitting devices;
the thermoelectric generation layer is positioned between the substrate and the light-emitting device layer, and comprises a first electric conduction heat conduction layer, a current generation layer and a second electric conduction heat conduction layer, wherein the first electric conduction heat conduction layer, the current generation layer and the second electric conduction heat conduction layer are arranged from the substrate to the direction of the light-emitting device layer, and the current generation layer is used for generating current according to the temperature difference between the first electric conduction heat conduction layer and the second electric conduction heat conduction layer to generate the flow of current carriers so as to form the current and outputting the current to a structure to be powered of the display panel.
Optionally, the display panel further includes a driving circuit layer, where the driving circuit layer is disposed between the substrate and the light emitting device layer, and the driving circuit layer includes a plurality of pixel circuits, and the pixel circuits are electrically connected to the light emitting devices corresponding to the light emitting device layer;
the thermoelectric generation layer is arranged in an insulating manner with the driving circuit layer and the light-emitting device layer.
Optionally, the thermoelectric generation layer is located between the substrate and the driving circuit layer.
Optionally, the thermoelectric generation layer is located between the driving circuit layer and the light emitting device layer.
Optionally, the thermoelectric generation layer comprises a plurality of thermoelectric generation units, and the thermoelectric generation units comprise a first sub-conductor, a second sub-conductor, an N-type semiconductor, a P-type semiconductor and a third sub-conductor;
the first sub-conductor and the second sub-conductor are both positioned on the first electric conduction and heat conduction layer, the N-type semiconductor and the P-type semiconductor are both positioned on the current generation layer, and the third sub-conductor is positioned on the second electric conduction and heat conduction layer;
the upper surface of the N-type semiconductor is contacted with the third sub-conductor, the lower surface of the N-type semiconductor is contacted with the first sub-conductor, the upper surface of the P-type semiconductor is contacted with the third sub-conductor, the lower surface of the P-type semiconductor is contacted with the second sub-conductor, the N-type semiconductor and the P-type semiconductor of the same thermoelectric generation unit are arranged in an insulating way, and the first sub-conductor and the second sub-conductor of the same thermoelectric generation unit are arranged in an insulating way.
Optionally, the thermoelectric generation units are arranged in an array; in the thickness direction of the display panel, the thermoelectric generation unit is arranged corresponding to at least one light emitting device;
in the first direction, the second sub-conductor of the thermoelectric generation unit is contacted with the first sub-conductor of the adjacent other thermoelectric generation unit, and a plurality of thermoelectric generation units connected with each other along the first direction form a power generation module;
in the second direction, the first sub-conductors at the first end of each power generation module are connected with each other to form a first output end, the second sub-conductors at the second end of each power generation module are connected with each other to form a second output end, and the first output end and the second output end are connected with the structure to be powered;
the first direction intersects the second direction.
Optionally, in the thickness direction of the display panel, the thermoelectric generation units are arranged in one-to-one correspondence with the light emitting devices.
Optionally, the display panel further includes a heat insulating layer, and the heat insulating layer is located at a side of the first conductive layer, which is close to the substrate.
Optionally, the display panel further includes a heat conducting medium layer, and the heat conducting medium layer is located between the light emitting device layer and the thermoelectric generation layer.
In a second aspect, an embodiment of the present invention further provides a display device, where the display device includes the display panel according to any one of the first aspects.
The embodiment of the invention provides a display panel and a display device, wherein the display panel comprises a substrate, a light-emitting device layer positioned on one side of the substrate and a thermoelectric generation layer positioned between the substrate and the light-emitting device layer, the thermoelectric generation layer comprises a first electric conduction heat conduction layer, a current generation layer and a second electric conduction heat conduction layer which are arranged from the substrate to the direction of the light-emitting device layer, and the current generation layer is used for generating current according to the flow of current carriers generated by the temperature difference between the first electric conduction heat conduction layer and the second electric conduction heat conduction layer and outputting the current to a structure to be powered of the display panel. The thermoelectric generation layer of the embodiment of the invention generates electric energy by utilizing the temperature difference at two sides, realizes the conversion of heat energy into electric energy, absorbs the heat of the light-emitting device layer to reduce the temperature of the display panel during display, and reduces the power consumption of the display panel by supplying the electric energy converted by the heat of the thermoelectric generation layer to a structure to be powered of the display panel.
Drawings
Fig. 1 is a schematic cross-sectional structure of a display panel according to an embodiment of the present invention;
fig. 2 is a schematic cross-sectional structure of another display panel according to an embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view of another display panel according to an embodiment of the present invention;
FIG. 4 is a schematic cross-sectional view of another display panel according to an embodiment of the present invention;
FIG. 5 is a top view of a display panel according to an embodiment of the present invention;
FIG. 6 is a schematic cross-sectional view of another display panel according to an embodiment of the present invention;
fig. 7 is a schematic cross-sectional structure of another display panel according to an embodiment of the present invention;
fig. 8 is a schematic structural diagram of a display device according to an embodiment of the present invention.
Detailed Description
The invention is described in further detail below with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting thereof. It should be further noted that, for convenience of description, only some, but not all of the structures related to the present invention are shown in the drawings.
As described in the background art, when the conventional display panel performs normal display, the temperature of the display panel is high, so that the use feeling of the display panel is poor. The inventor researches and discovers that the reason why the above problem occurs is that, as the light emitting time of the light emitting device in the light emitting device layer of the display panel in the prior art is prolonged, the heat generated by the light emitting device is higher and higher, especially, the structure of a white light emitting layer and a color filter is generally adopted in the silicon-based display panel, the transmittance of the color filter is lower, the light emitting device needs higher brightness and power consumption, and the display panel itself has higher temperature and power consumption is also improved due to the higher brightness.
For the foregoing reasons, an embodiment of the present invention provides a display panel, and fig. 1 is a schematic cross-sectional structure of the display panel according to the embodiment of the present invention, and referring to fig. 1, the display panel includes:
a substrate 100;
a light emitting device layer 200, the light emitting device layer 200 being located at one side of the substrate 100, the light emitting device layer including a plurality of light emitting devices;
the thermoelectric generation layer 300 is located between the substrate 100 and the light emitting device layer 200, and the thermoelectric generation layer 300 includes a first conductive layer 310, a current generation layer 320, and a second conductive layer 330 disposed in a direction from the substrate 100 to the light emitting device layer 200, where the current generation layer 320 is configured to generate a current according to a flow of carriers generated by a temperature difference between the first conductive layer 310 and the second conductive layer 330, and output the current to a structure to be powered of the display panel.
Specifically, the substrate 100 may be a silicon substrate, or may be a hard substrate formed of at least one material of a polymer material such as glass, glass fiber reinforced plastic, or a flexible substrate formed of at least one material of Polyimide (PI), polyethylene naphthalate (PEN), polyethylene terephthalate (PET), or the like, and the embodiment is not particularly limited herein. The circuit device structure formed on the silicon substrate has a size which is much smaller than that of a hard substrate such as glass or a flexible substrate formed by polyimide material, and is more suitable for micro-displays, and the hard substrate such as glass or the flexible substrate formed by polyimide material is suitable for being applied to display devices with a slightly larger size such as mobile phones.
The light emitting device layer 200 may be an organic light emitting diode OLED light emitting device layer, a liquid crystal light emitting device layer, a quantum dot light emitting diode QLED light emitting device layer, a micro light emitting diode micro led light emitting device layer, or the like, which is not particularly limited herein. The light emitting device layer 200 performs display of the display panel by emitting light.
The first conductive layer 310 and the second conductive layer 330 of the thermoelectric generation layer 300 are both conductive structures, the current generation layer 320 may be a semiconductor structure, and when there is a temperature difference between the first conductive layer 310 side and the second conductive layer 330 side, carriers in the current generation layer 320 flow from the side with a high temperature to the side with a low temperature. Wherein the carriers comprise positive and negative charges. The light emitting device in the light emitting device layer 200 generates heat when emitting light, so that the temperature of the light emitting device layer 200 is higher, the temperature of the second conductive heat conduction layer 330 is higher than that of the first conductive heat conduction layer 310, positive charges and negative charges in the current generating layer 320 flow from the second conductive heat conduction layer 330 to the first conductive heat conduction layer 310, and then current is generated in the thermoelectric generation layer 300, thereby converting heat energy in the display panel into electric energy, and reducing the temperature of the light emitting device layer 200. Meanwhile, the current formed by the thermoelectric generation layer 300 can be output to the structure to be powered of the display panel to supply power to the structure to be powered, so that the power consumption of the display panel is reduced. The structure to be powered may be a pixel circuit for driving the light emitting device to emit light.
The embodiment provides a display panel and a display device, wherein the display panel comprises a substrate, a light-emitting device layer positioned on one side of the substrate and a thermoelectric generation layer positioned between the substrate and the light-emitting device layer, the thermoelectric generation layer comprises a first electric conduction heat conduction layer, a current generation layer and a second electric conduction heat conduction layer which are arranged from the substrate to the direction of the light-emitting device layer, and the current generation layer is used for generating current according to the flow of current carriers generated by the temperature difference between the first electric conduction heat conduction layer and the second electric conduction heat conduction layer and outputting the current to a structure to be powered of the display panel. The thermoelectric generation layer of this embodiment utilizes the difference in temperature of both sides to produce the electric energy, realizes converting the heat energy into the electric energy, and the thermoelectric generation layer absorbs the heat of luminescent device layer to reduce the temperature of display panel when showing, and through the electric energy that converts the thermoelectric generation layer through the heat energy supply display panel wait the power supply structure, realize reducing display panel's consumption.
On the basis of the above embodiment, fig. 2 is a schematic cross-sectional structure of another display panel according to the embodiment of the present invention, and referring to fig. 2, optionally, the display panel further includes a driving circuit layer 400, where the driving circuit layer 400 is disposed between the substrate 100 and the light emitting device layer 200, and the driving circuit layer 400 includes a plurality of pixel circuits (not shown in fig. 2), and the pixel circuits are electrically connected to the light emitting devices 201 corresponding to the light emitting device layer 200.
The thermoelectric generation layer 300 is insulated from the driving circuit layer 400 and the light emitting device layer 200.
The driving circuit layer 400 includes a plurality of thin film transistors and capacitors for constituting a pixel circuit, and the light emitting devices in the light emitting device layer 200 emit light under the driving of the pixel circuit. Here, one pixel circuit may be connected to one light emitting device 201 or may be connected to a plurality of light emitting devices, and the embodiment is not particularly limited herein.
Taking the light emitting device layer 200 as an OLED light emitting device layer for illustration, the light emitting device layer 200 includes a plurality of light emitting devices 201, the light emitting devices 201 include a first electrode layer 210, a light emitting layer 220 and a second electrode layer 230, which are stacked, the first electrode layer 210 may be an anode layer, the first electrode layer 210 includes a plurality of first electrodes insulated from each other, and the second electrode layer 230 may be a cathode layer. The light emitting layer 220 may include only a single film layer, that is, only a light emitting material layer, or may include a multi-layer structure formed of a hole injection layer, a hole transport layer, a light emitting material layer, an electron transport layer, an electron injection layer, and the like, which are provided from the first electrode layer 210 to the second electrode layer 230. The light emitting layer 220 in this embodiment includes only a light emitting material layer. When the substrate 100 is a silicon substrate with a smaller size, the light-emitting layer 220 may be a white light-emitting layer laid on the whole layer, as shown in fig. 2, so as to reduce the difficulty of the preparation process, and a color filter layer (not shown in the figure) is additionally arranged to cover the white light-emitting layer to realize display with multiple colors; when the substrate 100 is a hard substrate or a flexible substrate with a larger size, the light emitting layer 220 may include at least a red light emitting layer, a green light emitting layer, and a blue light emitting layer, thereby realizing multi-color display.
The thermoelectric generation layer 300 is insulated from the driving circuit layer 400 and the light emitting device layer 200, so that the interference of the current generated by the thermoelectric generation layer 300 on the pixel circuit and the light emitting device is avoided, and the influence on the normal light emission of the light emitting device is avoided.
With continued reference to fig. 2, optionally, a thermoelectric generation layer 300 is located between the drive circuit layer 400 and the light emitting device layer 200.
Specifically, when the thermoelectric generation layer 300 is located between the driving circuit layer 400 and the light emitting device layer 200, the second conductive heat conduction layer 330 is located on the side of the current generation layer 320 close to the light emitting device layer 200, and the first conductive heat conduction layer 310 is located on the side of the current generation layer 320 close to the driving circuit layer 400, when the light emitting device 201 in the light emitting device layer 200 emits light, the temperature of the light emitting device layer 200 is higher, and then the temperature of the second conductive heat conduction layer 330 is higher than that of the first conductive heat conduction layer 310, and carriers in the current generation layer 320 flow from the second conductive heat conduction layer 330 to the first conductive heat conduction layer 310, so that a current is formed in the thermoelectric generation layer 300, and the heat generated by the light emitting device layer 200 is converted into electric energy and is transmitted to the structure to be powered. The thermoelectric generation layer 300 converts the absorbed heat of the light emitting device layer 200 into electric energy, thereby reducing the temperature of the light emitting device layer 200, and simultaneously transmitting the generated electric energy to a structure to be powered of the display panel, thereby reducing the power consumption of the display panel.
Fig. 3 is a schematic cross-sectional structure of another display panel according to an embodiment of the invention, and referring to fig. 3, an optional thermoelectric generation layer 300 is located between the substrate 100 and the driving circuit layer 400.
Specifically, when the thermoelectric generation layer 300 is located between the substrate 100 and the driving circuit layer 400, the second conductive layer 330 is closer to the light emitting device layer 200 than the first conductive layer 310, and when the light emitting device 201 in the light emitting device layer 200 emits light, the temperature of the light emitting device layer is higher, so that the temperature of the second conductive layer 330 that is closer to the light emitting device layer 200 is higher than that of the first conductive layer 310, and carriers in the current generation layer 320 flow from the second conductive layer 330 to the first conductive layer 310, thereby generating current, and realizing conversion of heat generated by the light emitting device layer 200 into electric energy for transmission to a structure to be powered. The thermoelectric generation layer 300 converts the absorbed heat of the light emitting device layer 200 into electric energy, thereby reducing the temperature of the light emitting device layer 200, and simultaneously transmitting the generated electric energy to a structure to be powered of the display panel, thereby reducing the power consumption of the display panel.
Fig. 4 is a schematic cross-sectional structure of another display panel according to an embodiment of the present invention, referring to fig. 4, optionally, the thermoelectric generation layer 300 includes a plurality of thermoelectric generation units 340, and the thermoelectric generation units 340 include a first sub-conductor 301, a second sub-conductor 302, an N-type semiconductor 303, a P-type semiconductor 304, and a third sub-conductor 305.
The first sub-conductor 301 and the second sub-conductor 302 are both located in the first conductive layer 310, the n-type semiconductor 303 and the P-type semiconductor 304 are both located in the current generating layer 320, and the third sub-conductor 305 is located in the second conductive layer 330.
The upper surface of the N-type semiconductor 303 is in contact with the third sub-conductor 305, the lower surface of the N-type semiconductor 303 is in contact with the first sub-conductor 301, the upper surface of the P-type semiconductor 304 is in contact with the third sub-conductor 305, the lower surface of the P-type semiconductor 304 is in contact with the second sub-conductor 302, the N-type semiconductor 303 and the P-type semiconductor 304 of the same thermoelectric generation unit 340 are arranged in an insulating manner, and the first sub-conductor 301 and the second sub-conductor 302 of the same thermoelectric generation unit 340 are arranged in an insulating manner.
Specifically, the first sub-conductor 301 and the second sub-conductor 302 may be metal wires, and the constituent materials of the first sub-conductor 301 and the second sub-conductor 302 may be the same or different, which is not specifically limited herein. The constituent materials of the N-type semiconductor 303 and the P-type semiconductor 304 may be one of bismuth telluride, antimony telluride, bismuth selenide, lead telluride, and the like, wherein the constituent materials of the N-type semiconductor 303 and the P-type semiconductor 304 may be the same or different. The carriers in the N-type semiconductor 303 are negative charges, and the carriers in the P-type semiconductor 304 are positive charges, so that when the negative charges in the N-type semiconductor 303 and the positive charges in the P-type semiconductor 304 flow from the second conductive layer 330 to the first conductive layer 310, electromotive forces are formed in the first sub-conductor 301 and the second sub-conductor 302 of the same thermoelectric generation unit 340, and the direct conversion of thermal energy into electrical energy by using the temperature difference is realized.
Fig. 5 is a top view of a display panel according to an embodiment of the present invention, fig. 6 is a schematic cross-sectional structure of another display panel according to an embodiment of the present invention, fig. 6 may be obtained by cutting along AA' from fig. 5, and referring to fig. 5 and fig. 6, optionally, thermoelectric generation units 340 are arranged in an array; the thermoelectric generation unit 340 is disposed corresponding to the at least one light emitting device 201 in the thickness direction of the display panel.
In the first direction X, the second sub-conductor 302 of the thermoelectric generation unit 340 is in contact with the first sub-conductor 301 of the adjacent other thermoelectric generation unit 340, and the plurality of thermoelectric generation units 340 connected to each other in the first direction X constitute the power generation module 350.
In the second direction Y, the first sub-conductors 301 at the first end of each power generation module 350 are connected to each other as a first output terminal U1, the second sub-conductors 302 at the second end of each power generation module 350 are connected to each other as a second output terminal U2, and the first output terminal U1 and the second output terminal U2 are connected to a structure to be supplied with power.
The first direction X intersects the second direction Y.
Specifically, fig. 6 schematically illustrates only one light emitting device 201. In the thickness direction of the display panel, the projection of one thermoelectric generation unit 340 on the substrate may cover the projection of one light emitting device 201 on the substrate, i.e., the thermoelectric generation units 340 may be disposed in one-to-one correspondence with the light emitting devices 201. In this embodiment, a driving circuit layer 400 is further included between the substrate 100 and the first conductive and heat-conductive layer 310, the driving circuit layer 400 points to the direction of the light-emitting device layer 200 from the substrate 100, and includes a gate 410, a gate insulating layer 420, a channel layer 430, an interlayer insulating layer 440 and a source-drain layer 450 which are sequentially stacked, a heat insulating layer 500 is disposed on one side of the source-drain layer 450 away from the substrate 100, and a planarization layer 700 is disposed between the thermoelectric generation layer 300 and the light-emitting device layer 200. The first electrode layer 210 of the light emitting device 201, that is, the anode is connected to the source/drain layer 450 through the via hole, and thus the pixel circuit in the driving circuit layer 400 is connected to the light emitting device 201, and the light emitting device 201 is driven to emit light. It should be noted that the thin film transistor in the pixel circuit in the driving circuit layer 400 is illustrated as a bottom gate structure, that is, the gate electrode 410 is located on the side of the channel layer 430 close to the substrate 100, and the thin film transistor in the pixel circuit in other embodiments may be a top gate structure.
The first end of the power generation module 350 may be the leftmost end of the plurality of thermoelectric generation units 340 connected to each other in the first direction X, the second end of the power generation module 350 may be the rightmost end of the plurality of thermoelectric generation units 340 connected to each other, and the electric energy generated by the plurality of thermoelectric generation units 340 is generated between the first output end U1 and the second output end U2 of the display panel, so that the electric energy generated by the thermoelectric generation units 340 can be supplied to the structure to be supplied.
The thermoelectric generation unit 340 is disposed corresponding to the at least one light emitting device 201, so that the thermoelectric generation unit 340 absorbs heat generated when the light emitting device 201 emits light, and converts the heat into electric energy to supply the power to the structure to be powered of the display panel, thereby reducing the temperature of the display panel, and simultaneously, the electric energy generated by the thermoelectric generation unit 340 can supply power to the display panel, thereby reducing the power consumption of the display panel.
With continued reference to fig. 5, alternatively, the thermoelectric generation units 340 are disposed in one-to-one correspondence with the light emitting devices 201 in the thickness direction of the display panel.
The thermoelectric generation units 340 are arranged in one-to-one correspondence with the light emitting devices 201, so that the thermoelectric generation units 340 can absorb heat generated when the light emitting devices 201 emit light to the greatest extent, convert the heat into electric energy to be supplied to a structure to be powered of the display panel, the temperature of the display panel is reduced, and meanwhile, the electric energy generated by the thermoelectric generation units 340 can supply power to the display panel, so that the power consumption of the display panel is reduced.
Fig. 7 is a schematic cross-sectional structure of another display panel according to an embodiment of the present invention, and referring to fig. 7, optionally, the display panel further includes a heat insulation layer 500, where the heat insulation layer 500 is located on a side of the first conductive layer 310 near the substrate 100.
Specifically, the display panel exemplarily shown in fig. 7 further includes a driving circuit layer 400, the driving circuit layer 400 being located between the substrate 100 and the light emitting device layer 200, and the thermoelectric generation layer 300 being located between the driving circuit layer 400 and the light emitting device layer 200.
The heat insulating layer 500 is used for insulating heat from the first conductive layer 310, so as to prevent the temperature of the substrate 100 from diffusing to the first conductive layer 310, and when the thermoelectric generation layer 300 is located between the driving circuit layer 400 and the light emitting device layer 200, the driving circuit layer 400 will generate a certain amount of heat when the display panel works, and the heat insulating layer 500 prevents the heat in the driving circuit layer 400 from diffusing to the first conductive layer 310.
The heat insulating layer 500 prevents the temperature of the substrate 100 from diffusing to the first conductive layer 310, so that a certain temperature difference exists between the first conductive layer 310 and the second conductive layer 330, and the temperature difference generating unit 340 is prevented from being affected to convert heat energy into electric energy.
In other embodiments, the thermoelectric generation layer may also be located between the substrate and the driving circuit layer, and then the heat insulating layer is located between the first conductive layer and the substrate, and the heat insulating layer blocks the temperature on the substrate side from diffusing to the first conductive layer.
With continued reference to fig. 7, the display panel may optionally further include a heat conductive medium layer 600, the heat conductive medium layer 600 being located between the light emitting device layer 200 and the thermoelectric generation layer 300.
Specifically, the heat conducting medium layer 600 is used for transferring heat in the light emitting device layer 200 to the second electrically and thermally conductive layer 330 of the thermoelectric generation layer 300, so that a certain temperature difference exists between the first electrically and thermally conductive layer 310 and the second electrically and thermally conductive layer 330, which is beneficial for the thermoelectric generation layer 300 to convert heat energy into electric energy.
The planarization layer 700 in fig. 6 may serve as the heat conductive medium layer 600.
In other embodiments, when the structure of the display panel is as shown in fig. 3, the thermoelectric generation layer 300 is located between the driving circuit layer 400 and the substrate 100, the heat conductive medium layer may be located only between the driving circuit layer 400 and the second conductive heat conductive layer 330, or may be located only between the first electrode layer 210 and the driving circuit layer 400, or between the driving circuit layer 400 and the second conductive heat conductive layer 330, and between the first electrode layer 210 and the driving circuit layer 400, each include a heat conductive medium layer.
Fig. 8 is a schematic structural diagram of a display device according to an embodiment of the present invention, and referring to fig. 8, a display device 10 includes a display panel 01 according to any of the above embodiments.
Specifically, the display device 10 may be a mobile phone as shown in fig. 8, a computer, a television, an intelligent wearable display device, or the like, or an AR/VR micro display device, which is not particularly limited in the embodiment of the present invention.
Note that the above is only a preferred embodiment of the present invention and the technical principle applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, while the invention has been described in connection with the above embodiments, the invention is not limited to the embodiments, but may be embodied in many other equivalent forms without departing from the spirit or scope of the invention, which is set forth in the following claims.
Claims (9)
1. A display panel, comprising:
a substrate;
a light emitting device layer located at one side of the substrate, the light emitting device layer including a plurality of light emitting devices;
the thermoelectric generation layer is positioned between the substrate and the light-emitting device layer, and comprises a first electric conduction heat conduction layer, a current generation layer and a second electric conduction heat conduction layer which are arranged from the substrate to the direction of the light-emitting device layer, wherein the current generation layer is used for generating current according to the temperature difference between the first electric conduction heat conduction layer and the second electric conduction heat conduction layer to generate the flow of current carriers and outputting the current to a structure to be powered of the display panel;
the thermoelectric generation layer comprises a plurality of thermoelectric generation units, and the projection of one thermoelectric generation unit on the substrate covers the projection of one light emitting device on the substrate in the thickness direction of the display panel;
the display panel further comprises a heat insulating layer, and the heat insulating layer is positioned on one side, close to the substrate, of the first electric conduction and heat conduction layer.
2. The display panel according to claim 1, further comprising a driving circuit layer disposed between the substrate and the light emitting device layer, the driving circuit layer including a plurality of pixel circuits electrically connected to light emitting devices corresponding to the light emitting device layer;
the thermoelectric generation layer is arranged in an insulating manner with the driving circuit layer and the light-emitting device layer.
3. The display panel of claim 2, wherein the thermoelectric generation layer is located between the driving circuit layer and the light emitting device layer.
4. The display panel according to claim 2, wherein the thermoelectric generation layer is located between the substrate and the driving circuit layer.
5. The display panel of claim 1, wherein the thermoelectric generation unit comprises a first sub-conductor, a second sub-conductor, an N-type semiconductor, a P-type semiconductor, and a third sub-conductor;
the first sub-conductor and the second sub-conductor are both positioned on the first electric conduction and heat conduction layer, the N-type semiconductor and the P-type semiconductor are both positioned on the current generation layer, and the third sub-conductor is positioned on the second electric conduction and heat conduction layer;
the upper surface of the N-type semiconductor is contacted with the third sub-conductor, the lower surface of the N-type semiconductor is contacted with the first sub-conductor, the upper surface of the P-type semiconductor is contacted with the third sub-conductor, the lower surface of the P-type semiconductor is contacted with the second sub-conductor, the N-type semiconductor and the P-type semiconductor of the same thermoelectric generation unit are arranged in an insulating way, and the first sub-conductor and the second sub-conductor of the same thermoelectric generation unit are arranged in an insulating way.
6. The display panel of claim 5, wherein the thermoelectric generation units are arranged in an array;
in the first direction, the second sub-conductor of the thermoelectric generation unit is contacted with the first sub-conductor of the adjacent other thermoelectric generation unit, and a plurality of thermoelectric generation units connected with each other along the first direction form a power generation module;
in the second direction, the first sub-conductors at the first end of each power generation module are connected with each other to form a first output end, the second sub-conductors at the second end of each power generation module are connected with each other to form a second output end, and the first output end and the second output end are connected with the structure to be powered;
the first direction intersects the second direction.
7. The display panel according to claim 6, wherein the thermoelectric generation units are disposed in one-to-one correspondence with the light emitting devices in a thickness direction of the display panel.
8. The display panel of claim 1, further comprising a thermally conductive medium layer between the light emitting device layer and the thermoelectric generation layer.
9. A display device comprising the display panel of any one of claims 1-8.
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| CN108648635B (en) * | 2018-05-09 | 2019-09-20 | 京东方科技集团股份有限公司 | The temperature-compensation method of display panel, display device and display panel |
| CN109599429B (en) * | 2018-12-25 | 2021-11-02 | 合肥鑫晟光电科技有限公司 | Display panel and method for manufacturing the same |
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| CN111554830B (en) * | 2020-05-15 | 2023-01-10 | 京东方科技集团股份有限公司 | Organic light emitting diode device, display panel and preparation method |
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