CN113354410A - Ceramic material and preparation method and application thereof - Google Patents

Ceramic material and preparation method and application thereof Download PDF

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CN113354410A
CN113354410A CN202110611337.6A CN202110611337A CN113354410A CN 113354410 A CN113354410 A CN 113354410A CN 202110611337 A CN202110611337 A CN 202110611337A CN 113354410 A CN113354410 A CN 113354410A
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barium titanate
rare earth
ceramic
sio
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CN113354410B (en
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马艳红
邱基华
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Chaozhou Three Circle Group Co Ltd
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Chaozhou Three Circle Group Co Ltd
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Abstract

The invention discloses a ceramic material and a preparation method and application thereof. The ceramic material comprises a barium titanate compound, rare earth elements and sintering aids, wherein the contents of the rare earth elements and the sintering aids are not 0, and the sintering aids comprise MgO and MnO2And SiO2(ii) a Based on the molar weight of the barium titanate compound, 0-10% of rare earth elements, 0-25% of sintering aid, 0-10% of MgO and MnO20 to 10% of SiO20 to 5% of the total amount of the inorganic filler,MnO2and SiO2Has a molar ratio of 1.1 to 3, MgO and MnO2The molar ratio of (A) to (B) is 0.3 to 4. The invention improves the weak strength of barium titanate ceramic dielectric material by optimizing sintering aid, and improves the flexural strength to be more than or equal to 7.5kgf and the bending strength to be more than or equal to 6.5mm on the basis of ensuring good electrical property of multilayer ceramic capacitor.

Description

Ceramic material and preparation method and application thereof
Technical Field
The invention relates to a ceramic material and a preparation method and application thereof, in particular to a ceramic material for improving the strength of the material by optimizing a sintering aid and a preparation method and application thereof.
Background
Multilayer ceramic capacitors (MLCCs) are one of the common passive components and are widely used in home appliances, mobile phones, computers and other intelligent control circuits. The manufacturing process of the MLCC mainly comprises three processes of molding, sintering and end sealing. The forming process comprises the steps of fully mixing ceramic powder, an organic solvent and an additive, then casting the mixture into a ceramic dielectric layer, printing an inner electrode on the ceramic dielectric layer, then stacking, pressing and cutting the ceramic dielectric layer to form a ceramic chip, and sintering and end-sealing the ceramic chip to obtain the ceramic capacitor. The multilayer ceramic capacitor can be mainly classified into a class I high frequency ceramic capacitor and a class II high dielectric ceramic capacitor.
The II-type multilayer ceramic capacitor is mainly applied to the fields of consumer electronics, communication, vehicle-mounted and the like. The existing II-type multilayer ceramic capacitor mostly adopts ceramic materials which take barium titanate compounds as main components, the materials have low strength, and the problems of cracking, breaking and even failure and the like are easily caused by the influence of environmental temperature change and surrounding vibration in the using process.
At present, some manufacturers can improve the fracture problem of the product in the using process by means of optimizing the structure and the like, for example, the design of a noble metal soft terminal is realized, a buffer layer is additionally arranged at the end of the product and is generally made of a flexible noble metal and a conductive resin material, when a capacitor with the structural design receives an external force, the soft terminal generates slight plastic deformation and absorbs stress to protect the product, but the scheme has high cost and great difficulty in the soft terminal co-firing technology and does not improve the strength of the product; such as by designing a reinforcement body composed of a higher strength material in at least one of the upper, inner and lower surfaces of the active electrode layer to improve the overall strength of the product, but the strength defect of the ceramic dielectric material itself still exists in this solution.
Therefore, a technical scheme which has low cost and low treatment difficulty and can fundamentally improve the strength of the ceramic dielectric material is urgently needed to be developed.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a ceramic material and a preparation method and application thereof, and the sintering aid is optimized to fundamentally overcome the defect of weak strength of a barium titanate ceramic dielectric material, so that the strength of the barium titanate ceramic dielectric material is improved, the mechanical strength of a multilayer ceramic capacitor prepared from the barium titanate ceramic dielectric material is further improved, and meanwhile, the cost and the processing difficulty of obtaining the multilayer ceramic capacitor with high mechanical strength are greatly reduced.
In order to achieve the above object, the present invention provides, in a first aspect, a ceramic material comprising a barium titanate-based compound, a rare earth element and a sintering aid, wherein the contents of the rare earth element and the sintering aid are both different from 0, and the sintering aid comprises MgO and MnO2And SiO2(ii) a Calculated by taking the molar weight of the barium titanate compound as a reference, the rare earth element accounts for 0-10%, the sintering aid accounts for 0-25%, the MgO accounts for 0-10%, and the MnO20-10% of SiO20 to 5% of the total amount of the MnO2And the SiO2The molar ratio of the MgO to the MnO is 1.1 to 32The molar ratio of (A) to (B) is 0.3 to 4.
Preferably, the MgO accounts for 0.3 to 3% and the MnO accounts for 0.3 to 3% based on the molar amount of the barium titanate-based compound20.33-3% of SiO20.3-2% of the total amount of the MnO2And the SiO2The molar ratio of the MgO to the MnO of 1.1 to 1.52The molar ratio of (A) to (B) is 0.6 to 1.5.
Preferably, the rare earth element accounts for 0.2-3% of the molar amount of the barium titanate compound.
Preferably, the barium titanate-based compound is (Ba)1-x-yCaxSry)m(Ti1-p-qZrpHfq)O3Wherein x is 0-0.18, y is 0-0.02, p is 0-0.02, q is 0-0.02, and m is 0.990-1.06.
Preferably, the rare earth element is at least one of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and Y.
Preferably, the barium titanate is combinedThe substance is BaTiO3And the rare earth element is Ho. More preferably, the rare earth element accounts for 0.5%, the MgO accounts for 0.62%, and the MnO is calculated by taking the molar weight of the barium titanate compound as a reference20.78% of the SiO20.6% of the total amount of MnO2And the SiO2Is 1.3, the MgO and the MnO2Is 0.8.
In a second aspect, the present invention further provides a preparation method of the above ceramic material, which comprises the following steps:
(1) mixing compounds of Mg, Mn, Si and rare earth elements with barium titanate compounds, crushing and calcining to obtain the ceramic material;
or (A) mixing compounds of Mg, Mn, Si and rare earth elements, calcining, crushing, and mixing with barium titanate compound powder to obtain the ceramic material.
Preferably, the compound of Mg, Mn, Si and the rare earth element is at least one of an oxide and a salt of Mg, Mn, Si and the rare earth element; the calcining temperature in the step (1) and the calcining time in the step (A) are both 800-1200 ℃, and the calcining time is 1-4 h. More preferably, the calcining temperature in the step (1) is 800-1100 ℃, and the calcining time is 1-3 h.
Preferably, in both step (1) and step (a), wet pulverization is performed between mixing and calcination, and drying treatment is performed between wet pulverization and calcination.
In a third aspect, the present invention provides a ceramic slurry comprising a solvent, a binder and the above ceramic material.
Preferably, the ceramic slurry is a ceramic slurry for a multilayer ceramic capacitor.
In a fourth aspect, the present invention provides a ceramic dielectric layer, a ceramic chip or a multilayer ceramic capacitor made using the above ceramic slurry.
In a fifth aspect, the present invention provides the use of the above ceramic material for the manufacture of a multilayer ceramic capacitor.
Compared with the prior art, the invention has the beneficial effects that: the invention relates to barium titanate ceramic dielectric materialThe sintering aid in the material is optimized by MnO in the sintering aid2And SiO2Molar ratio of (A) and MgO and MnO2The molar ratio of (A) to (B) is reasonably controlled so that MnO is present2、SiO2The sintering aid components form liquid phase at relatively low temperature and diffuse to BaTiO more fully3The surface of the crystal grain promotes the sintering of the material, improves the sintering state of the material, improves the compactness of the material, and simultaneously, the glass positioned on the grain boundary plays a role in delaying or stopping the expansion of micro cracks so as to further improve the strength of the material; in addition, the reasonable adjustment of the Mg content can inhibit the abnormal growth of crystal grains, and improve the breaking strength (not less than 7.5kgf) and the bending strength (not less than 6.5mm) of the multilayer ceramic capacitor on the basis of ensuring the good electrical property of the multilayer ceramic capacitor.
Detailed Description
To better illustrate the objects, aspects and advantages of the present invention, the present invention will be further described with reference to specific examples. It will be understood by those skilled in the art that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In the examples, the experimental methods used were all conventional methods unless otherwise specified, and the materials, reagents and the like used were commercially available without otherwise specified.
As used herein, "based on the molar amount of the barium titanate-based compound, 0 to 10% of the rare earth element, 0 to 25% of the sintering aid, 0 to 10% of MgO, and MnO20 to 10% of SiO20 to 5% "means that the molar amount of the rare earth element is 0 to 10% of the molar amount of the barium titanate compound, the molar amount of the sintering aid is 0 to 25% of the molar amount of the barium titanate compound, the molar amount of MgO is 0 to 10% of the molar amount of the barium titanate compound, and MnO is2SiO in an amount of 0 to 10% by mole based on the barium titanate compound2The molar weight is 0-5% of the molar weight of the barium titanate compound, and the similar description is similar to the above.
As used herein, "MnO" refers to a non-linear electric field2And SiO2Has a molar ratio of 1.1 to 3, MgO and MnO2The molar ratio of (A) to (B) is 0.3 to 4' and means MnO2Molar weight/SiO21.1 to 3 mol% of MgO/MnO2The molar weight is 0.3-4, and other similar descriptions are similar.
Herein, "compounds of Mg, Mn, Si, and rare earth elements" refer to compounds of Mg, Mn, Si, and rare earth elements. "at least one of oxides and salts of Mg, Mn, Si and rare earth elements" means at least one of oxides and salts of Mg, at least one of oxides and salts of Mn, at least one of oxides and salts of Si, and at least one of oxides and salts of rare earth elements.
In order to solve the problem that the ceramic material which takes the barium titanate compound as the main component has low strength, so that the multilayer ceramic capacitor prepared by the ceramic material is easy to crack, break or even lose efficacy in the using process, the invention optimizes the sintering aid in the ceramic material, and leads MnO to be generated by reasonably regulating the proportion of Mn and Si in the sintering aid2、SiO2The sintering aid components form a liquid phase at a lower temperature, and can be more fully diffused to BaTiO3The surface of the crystal grain promotes the sintering of the material, improves the sintering state of the material, improves the compactness of the material, and simultaneously, the existence of a glass phase at a crystal boundary can prevent or delay the expansion of microcracks, thereby further improving the strength of the material; in addition, through reasonably regulating and controlling the Mg content, the abnormal growth of crystal grains can be inhibited, the electrical properties of the material such as Df (dielectric loss), IR (insulation resistance) and the like are prevented from being deteriorated, and the breaking strength of the multilayer ceramic capacitor is improved to be more than or equal to 7.5kgf and the bending strength of the multilayer ceramic capacitor is improved to be more than or equal to 6.5mm on the basis of ensuring the good electrical properties of the multilayer ceramic capacitor. Specifically, the ceramic material comprises a barium titanate compound, a rare earth element and a sintering aid, wherein the contents of the rare earth element and the sintering aid are not 0, and the sintering aid comprises MgO and MnO2And SiO2(ii) a Based on the molar weight of the barium titanate compound, 0-10% of rare earth elements, 0-25% of sintering aid, 0-10% of MgO and MnO20 to 10% of SiO20 to 5% of MnO2And SiO2Has a molar ratio of 1.1 to 3, MgO and MnO2The molar ratio of (A) to (B) is 0.3 to 4.
When the molar ratio of MgO to the barium titanate-based compound exceeds 10%, the firing temperature required for producing the multilayer ceramic capacitor increases, the sinterability deteriorates, the movement of the material is suppressed, and the life of the multilayer ceramic capacitor is accelerated, and therefore, the molar ratio of MgO to the barium titanate-based compound is selected to be 10% or less. The molar ratio of MgO to the barium titanate compound is preferably 0.3 to 3%, so that the sintering temperature required for preparing the multilayer ceramic capacitor is lower, the sintering property is better, and compared with the condition that the molar ratio of MgO to the barium titanate compound is less than 0.3%, the abnormal growth of crystal grains can be better inhibited, higher resistivity is obtained, and better TCC (temperature change rate of capacitance) is obtained.
When MnO is present2When the molar ratio of the component (B) to the barium titanate compound exceeds 10%, semiconducting tends to occur, the aging rate is high, and the DC-bias (i.e., DC offset) characteristics are deteriorated, so MnO is selected2The molar ratio of the barium titanate compound to the barium titanate compound is 10% or less. Preferably MnO2The molar ratio of the barium titanate compound to the barium titanate compound is 0.33-3%, so that the prepared multilayer ceramic capacitor is not easy to be semiconductive, has lower aging rate and better DC-bias characteristic, and is compared with MnO2When the molar ratio of the barium titanate compound to the ceramic powder is less than 0.33%, a multilayer ceramic capacitor having low reduction resistance can have a higher insulation resistance.
When SiO is present2When the molar ratio of the silicon oxide to the barium titanate compound exceeds 5%, crystal grains tend to grow and TCC characteristics tend to deteriorate, and therefore SiO is selected2The molar ratio of the barium titanate compound to the barium titanate compound is 5% or less. SiO is preferred2The molar ratio of the barium titanate to the barium titanate compound is 0.3-2%, so that the crystal grain growth can be effectively avoided, the TCC (transmission coefficient of friction) characteristic is better, and the SiO phase content is higher than that of SiO2When the molar ratio of the barium titanate compound to the ceramic powder is less than 0.3%, the required firing temperature is low, the sinterability is good, and the life of the multilayer ceramic capacitor obtained is long.
When MnO is present2And SiO2When the molar ratio of (A) is more than 3 and less than 1.1, the temperature at which the sintering aid forms a liquid phase is high, the glass isodiffusion effect is poor, the material strength improvement effect is not expected,thus, MnO is selected2And SiO2The molar ratio of (A) to (B) is 1.1 to 3. Preferably MnO2And SiO2The molar ratio of (A) to (B) is 1.1 to 1.5.
When MgO and MnO2When the molar ratio of (a) is more than 4, although grain growth is inhibited in the sintering process for preparing the multilayer ceramic capacitor, the required sintering temperature is high, the sinterability is poor, and diffusion of elements such as rare earth and the like is inhibited, which leads to deterioration of the service life; when MgO and MnO2When the molar ratio of (A) is less than 0.3, the effect of suppressing the growth of crystal grains is low during the sintering process for producing a multilayer ceramic capacitor, resulting in abnormal growth of crystal grains and deterioration of the resistivity, TCC and the like, and therefore, MgO and MnO are selected2The molar ratio of (A) to (B) is 0.3 to 4. MgO and MnO are preferable2The molar ratio of (A) to (B) is 0.6 to 1.5.
When the molar ratio of the rare earth element to the barium titanate-based compound exceeds 10%, the temperature coefficient of electrostatic capacity tends to be more stable, the dielectric constant of the material is low, the sinterability is low, and the insulation resistance is deteriorated, so that the molar ratio of the rare earth element to the barium titanate-based compound is selected to be 10% or less. The molar ratio of the rare earth element to the barium titanate compound is preferably 0.2-3%, so that the rare earth element consumption is less, the dielectric constant of the material is better, the sintering property is better, the insulation resistance is higher, and the problems of lower high-temperature insulation resistance and shorter high-temperature service life caused by lower molar ratio of the rare earth element to the barium titanate compound can be solved.
In some embodiments, the barium titanate-based compound is (Ba)1-x-yCaxSry)m(Ti1-p-qZrpHfq)O3Wherein x is 0-0.18, y is 0-0.02, p is 0-0.02, q is 0-0.02, and m is 0.990-1.06. When m is less than 0.990, abnormal growth of crystal grains is easy to occur, and insulation resistance is reduced; when m > 1.06, sinterability decreases, so that m is selected from 0.990 to 1.06.
The rare earth element can be at least one of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y and Sc. Preferably, the rare earth element is at least one of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and Y.
The barium titanate-based compound may be selected from powders prepared by a solid phase method, or may be prepared by a coprecipitation method, a hydrothermal method, an oxalate method, or the like. However, the method for producing the barium titanate-based compound is not limited thereto.
The ceramic material can be prepared by a preparation method comprising the following steps of: and mixing the compounds of Mg, Mn, Si and rare earth elements with the barium titanate compound, and calcining to obtain the ceramic material. In some embodiments, between this mixing and calcining, wet pulverization is also performed; and drying after wet grinding before calcining. The solvent used for wet grinding is selected from at least one of water and ethanol, but is not limited thereto. The grinding medium used for the wet grinding may be zirconia balls, but is not limited thereto. In some embodiments, the calcination temperature is 800-1200 ℃ and the calcination time is 1-4 h. In some preferred embodiments, the calcination temperature is 800 to 1100 ℃ and the calcination time is 1 to 3 hours.
The ceramic material of the invention can also be prepared by a preparation method comprising the following steps: mixing compounds of Mg, Mn, Si and rare earth elements, calcining, crushing, and mixing with barium titanate compound powder to obtain the ceramic material. In some embodiments, between this mixing and calcining, wet pulverization is also performed; and drying after wet grinding before calcining. The solvent used for wet grinding is selected from at least one of water and ethanol, but is not limited to the above; the grinding medium used for wet grinding can adopt zirconia balls, but is not limited to the zirconia balls; the time of wet grinding can be selected to be 24-64 hours. The calcination temperature is usually 800-1200 ℃ and the calcination time is 1-4 h. In some embodiments, after the calcination, the product is pulverized to a particle size of 10 microns or less, dried and then mixed with barium titanate-based compound powder.
The ceramic material can be applied to the preparation of multilayer ceramic capacitors. In some embodiments, the method of preparation comprises the steps of:
(1) mixing and ball-milling the raw materials of the ceramic slurry to obtain the ceramic slurry, wherein the raw materials of the ceramic slurry comprise the ceramic material, the adhesive and the solvent;
(2) casting the ceramic slurry to form a layer of film, and drying to obtain a ceramic dielectric layer;
(3) forming an inner electrode layer on the surface of the ceramic dielectric layer obtained in the step (2) through a printing process;
(4) laminating, pressing, removing glue and sintering the ceramic medium layer printed with the inner electrode to obtain a ceramic chip;
(5) coating conductive paste for external electrodes on two end surfaces of the ceramic chip, and baking at 600-900 ℃ to form external electrodes;
(6) electrolytic plating is performed to form a first plating film made of Ni, Cu, Ni — Cu alloy, or the like on the surface of the external electrode, and then a second plating film made of solder, tin, or the like is formed on the surface of the first plating film, thereby obtaining a multilayer ceramic capacitor. The binder is removed by burning the binder by heat treatment at 250-350 ℃ in an atmospheric atmosphere, and then removing the binder by H2-N2-H2Under a strongly reducing atmosphere consisting of O gas (e.g., oxygen partial pressure of 10)11～1013MPa) is sintered at a sintering temperature of 1100 to 1300 ℃ for about 1 to 3 hours (e.g., 1.5 hours, 2 hours, 2.5 hours, etc.). The conductive material contained in the conductive paste for external electrodes is preferably Ag, Cu, or an alloy thereof as a main component, from the viewpoint of cost reduction.
In some other embodiments, the method of making comprises the steps of:
(1) mixing and ball-milling the raw materials of the ceramic slurry to obtain the ceramic slurry, wherein the raw materials of the ceramic slurry comprise the ceramic material, the adhesive and the solvent;
(2) casting the ceramic slurry to form a layer of film, and drying to obtain a ceramic dielectric layer;
(3) forming an inner electrode layer on the surface of the ceramic dielectric layer obtained in the step (2) through a printing process;
(4) laminating and pressing the ceramic dielectric layer printed with the internal electrode to obtain a laminated forming body, coating conductive paste for external electrodes on two end faces of the laminated forming body, and then carrying out glue discharging and sintering treatment to obtain a ceramic chip;
(5) electrolytic plating is performed to form a first plating film made of Ni, Cu, Ni — Cu alloy, or the like on the surface of the external electrode, and then a second plating film made of solder, tin, or the like is formed on the surface of the first plating film, thereby obtaining a multilayer ceramic capacitor. The binder is removed by burning the binder by heat treatment at 250-350 ℃ in an atmospheric atmosphere, and then removing the binder by H2-N2-H2Under a strongly reducing atmosphere consisting of O gas (e.g., oxygen partial pressure of 10)11～1013MPa) is sintered at a sintering temperature of 1100 to 1300 ℃ for about 1 to 3 hours (e.g., 1.5 hours, 2 hours, 2.5 hours, etc.). The conductive material contained in the conductive paste for external electrodes is preferably Ag, Cu, or an alloy thereof as a main component, from the viewpoint of cost reduction.
In the research process, the inventors perform performance measurement on the prepared multilayer ceramic capacitor by adopting the following test method:
(1) the test methods in table 1 were used;
TABLE 1
Figure BDA0003094752430000081
Figure BDA0003094752430000091
(2) Breaking strength: and (3) testing by adopting a tension tester, fixing the product on a grinding tool of a test bench, and applying 1mm/S pressure to the product by using the tension tester until the product is broken. The standard of the breaking strength reaching the standard is more than or equal to 7.5 kgf;
(3) bending strength: and testing by adopting a tensile tester, welding the product on a special PVB (polyvinyl butyral) plate, and reversely applying a pressure of 1mm/s to the PVB plate until the capacity change rate of the product is more than 10%. The standard of the bending strength reaching the standard is more than or equal to 6.5 mm.
Examples 1 to 26 and comparative examples 1 to 12
Examples 1 to 26 (abbreviated as examples 1 to 26) and comparative examples 1 to 12 (abbreviated as pairs 1 to 12) each provide a ceramic material comprising a barium titanate-based compound, a rare earth element, and a sintering aid, wherein the barium titanate-based compound is (Ba)1-x-yCaxSry)m(Ti1-p-qZrpHfq)O3X is 0, y is 0, p is 0, q is 0, m is 1, and the barium titanate compounds are prepared by a solid phase method and are powder prepared in the same batch; the molar ratio of the rare earth element to the barium titanate compound is a%, the molar ratio of MgO to the barium titanate compound is b%, and MnO2The molar ratio of the barium titanate compound to the barium titanate compound is c percent, and SiO is2The molar ratio of the barium titanate compound to the barium titanate compound is d percent, and the values of a, b, c, d, b/c and c/d are shown in Table 2.
TABLE 2
Figure BDA0003094752430000092
Figure BDA0003094752430000101
The preparation process of the ceramic materials of the embodiments 1 to 26 and the comparative examples 1 to 12 is the same, and comprises the following steps: weighing Ho according to a predetermined proportion2O3、MgO、MnO2And SiO2And then adding the barium titanate powder, pure water and zirconia balls with the diameter of 3-5 mm into ball milling equipment, carrying out wet grinding, drying the mixture, and then calcining at 900 ℃ for 2 hours to prepare the ceramic raw material powder.
The ceramic materials of examples 1 to 26 and comparative examples 1 to 12 were processed into multilayer ceramic capacitors by the same process, which includes the following steps:
(1) mixing and ball-milling the raw materials of the ceramic slurry to obtain the ceramic slurry, wherein the raw materials of the ceramic slurry comprise the ceramic material, the adhesive and the solvent;
(2) casting the ceramic slurry to form a layer of film, and drying to obtain a ceramic dielectric layer;
(3) forming an inner electrode layer on the surface of the ceramic dielectric layer obtained in the step (2) through a printing process;
(4) laminating and pressing the ceramic dielectric layer printed with the internal electrode, performing heat treatment at 260 deg.C in atmospheric atmosphere to burn and remove the adhesive, and removing the adhesive from the ceramic dielectric layer2-N2-H2Under a strongly reducing atmosphere of O gas (oxygen partial pressure of 10)11～1013MPa) sintering treatment is carried out for about 2 hours at the sintering temperature of 1200 ℃, and then the ceramic chip is obtained;
(5) coating conductive paste for external electrodes on two end surfaces of the ceramic chip, and baking at 800 ℃ to form external electrodes;
(6) electrolytic plating is performed to form a first plating film made of Ni, Cu, Ni — Cu alloy, or the like on the surface of the external electrode, and further, a second plating film made of solder, tin, or the like is formed on the surface of the first plating film, thereby completing the production of the multilayer ceramic capacitor. The materials used for the production of the multilayer ceramic capacitors of the examples and comparative examples were the same except that the ceramic materials used were different.
The multilayer ceramic capacitors were subjected to performance tests, and some of the results are shown in Table 3.
TABLE 3
Figure BDA0003094752430000111
Figure BDA0003094752430000121
Furthermore, the TCC (-55 ℃) of the multilayer ceramic capacitors produced in examples 1 to 26 was within. + -. 15%.
Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention and not for limiting the protection scope of the present invention, and although the present invention is described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions can be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention.

Claims (10)

1. The ceramic material is characterized by comprising a barium titanate compound, rare earth elements and a sintering aid, wherein the content of the rare earth elements and the content of the sintering aid are both not 0, and the sintering aid comprises MgO and MnO2And SiO2(ii) a Calculated by taking the molar weight of the barium titanate compound as a reference, the rare earth element accounts for 0-10%, the sintering aid accounts for 0-25%, the MgO accounts for 0-10%, and the MnO20-10% of SiO20 to 5% of the total amount of the MnO2And the SiO2The molar ratio of the MgO to the MnO is 1.1 to 32The molar ratio of (A) to (B) is 0.3 to 4.
2. The ceramic material according to claim 1, wherein the MgO is 0.3 to 3% and the MnO is MnO, based on the molar amount of the barium titanate-based compound20.33-3% of SiO20.3-2% of the total amount of the MnO2And the SiO2The molar ratio of the MgO to the MnO of 1.1 to 1.52The molar ratio of (A) to (B) is 0.6 to 1.5.
3. The ceramic material according to claim 1, wherein the rare earth element is contained in an amount of 0.2 to 3% by mole based on the barium titanate-based compound.
4. The ceramic material according to claim 1, wherein the barium titanate-based compound is (Ba)1-x- yCaxSry)m(Ti1-p-qZrpHfq)O3Wherein x is 0-0.18, y is 0-0.02, p is 0-0.02, q is 0-0.02, and m is 0.990-1.06; the rare earth elements are La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho,At least one of Er, Tm, Yb, Lu and Y.
5. The ceramic material of claim 1, wherein the barium titanate-based compound is BaTiO3The rare earth element is Ho; preferably, the rare earth element accounts for 0.5 percent, the MgO accounts for 0.62 percent and the MnO accounts for 0.62 percent based on the molar weight of the barium titanate compound20.78% of the SiO20.6% of the total amount of MnO2And the SiO2Is 1.3, the MgO and the MnO2Is 0.8.
6. A method for preparing a ceramic material according to any one of claims 1 to 5, comprising the steps of:
(1) mixing compounds of Mg, Mn, Si and rare earth elements with barium titanate compounds, and calcining to obtain the ceramic material;
or (A) mixing compounds of Mg, Mn, Si and rare earth elements, calcining, crushing, and mixing with barium titanate compound powder to obtain the ceramic material.
7. The preparation method according to claim 6, wherein the compound of Mg, Mn, Si and rare earth elements is at least one of oxides and salts of Mg, Mn, Si and rare earth elements; in the step (1) and the step (A), the calcining temperature is 800-1200 ℃, the calcining time is 1-4 hours, wet grinding is carried out between mixing and calcining, and drying treatment is carried out between wet grinding and calcining.
8. A ceramic slurry comprising a solvent, a binder and the ceramic material according to any one of claims 1 to 5; preferably, the ceramic slurry is a ceramic slurry for a multilayer ceramic capacitor.
9. A ceramic dielectric layer, a ceramic chip or a multilayer ceramic capacitor made using the ceramic slurry of claim 8.
10. Use of the ceramic material according to any one of claims 1 to 5 for the production of a multilayer ceramic capacitor.
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114538917A (en) * 2022-01-29 2022-05-27 广东风华高新科技股份有限公司 High-capacity ceramic dielectric material, ceramic capacitor and preparation method thereof
CN114956807A (en) * 2021-09-15 2022-08-30 深圳先进电子材料国际创新研究院 Capacitor ceramic chip and preparation method and application thereof
CN116003121A (en) * 2022-12-26 2023-04-25 深圳三环电子有限公司 Ceramic dielectric composition and chip type multilayer ceramic capacitor prepared from same
CN116425528A (en) * 2023-04-24 2023-07-14 广东省先进陶瓷材料科技有限公司 Dielectric ceramic material and chip type multilayer ceramic capacitor prepared from same
CN116813355A (en) * 2023-06-27 2023-09-29 南充三环电子有限公司 Ceramic dielectric material and preparation method and application thereof

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1237949A (en) * 1996-11-20 1999-12-08 株式会社村田制作所 Barium titanate-base semiconducting ceramic composition
JP2000185969A (en) * 1998-12-22 2000-07-04 Matsushita Electric Ind Co Ltd Dielectric ceramic composition
CN1332131A (en) * 2000-07-05 2002-01-23 三星电机株式会社 Dielectric ceramic composition, ceramic capacitor using the same and manufacture thereof
KR20020077588A (en) * 2001-04-02 2002-10-12 삼성전기주식회사 A Dielectic Composition and a Method of Manufacturing Dielectric Body for Multilayer Ceramic Capacitor Using it
TW200423165A (en) * 2002-10-17 2004-11-01 Murata Manufacturing Co Dielectric ceramic and method for preparation thereof, and monolithic ceramic capacitor
JP2007261913A (en) * 2006-03-29 2007-10-11 Tdk Corp Dielectric porcelain composition, electronic part and multilayer ceramic capacitor
CN101137598A (en) * 2005-03-28 2008-03-05 松下电器产业株式会社 Dielectric porcelain composition, and method for manufacturing capacitor using the same
CN101182201A (en) * 2007-11-27 2008-05-21 清华大学 Nano doping dielectric material for preparing base-metal inner-electrode multi-layer ceramic sheet type capacitor
CN101517672A (en) * 2006-09-27 2009-08-26 京瓷株式会社 Multilayer ceramic capacitor and method for production thereof
CN103298769A (en) * 2011-01-12 2013-09-11 株式会社村田制作所 Multilayer ceramic capacitor and method for manufacturing multilayer ceramic capacitor
CN110818407A (en) * 2019-11-05 2020-02-21 广东风华高新科技股份有限公司 X7R characteristic MLCC dielectric material and preparation method thereof
CN110867321A (en) * 2019-12-02 2020-03-06 深圳三环电子有限公司 Multilayer ceramic capacitor and preparation method thereof

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1237949A (en) * 1996-11-20 1999-12-08 株式会社村田制作所 Barium titanate-base semiconducting ceramic composition
JP2000185969A (en) * 1998-12-22 2000-07-04 Matsushita Electric Ind Co Ltd Dielectric ceramic composition
CN1332131A (en) * 2000-07-05 2002-01-23 三星电机株式会社 Dielectric ceramic composition, ceramic capacitor using the same and manufacture thereof
KR20020077588A (en) * 2001-04-02 2002-10-12 삼성전기주식회사 A Dielectic Composition and a Method of Manufacturing Dielectric Body for Multilayer Ceramic Capacitor Using it
TW200423165A (en) * 2002-10-17 2004-11-01 Murata Manufacturing Co Dielectric ceramic and method for preparation thereof, and monolithic ceramic capacitor
CN101137598A (en) * 2005-03-28 2008-03-05 松下电器产业株式会社 Dielectric porcelain composition, and method for manufacturing capacitor using the same
JP2007261913A (en) * 2006-03-29 2007-10-11 Tdk Corp Dielectric porcelain composition, electronic part and multilayer ceramic capacitor
CN101517672A (en) * 2006-09-27 2009-08-26 京瓷株式会社 Multilayer ceramic capacitor and method for production thereof
CN101182201A (en) * 2007-11-27 2008-05-21 清华大学 Nano doping dielectric material for preparing base-metal inner-electrode multi-layer ceramic sheet type capacitor
CN103298769A (en) * 2011-01-12 2013-09-11 株式会社村田制作所 Multilayer ceramic capacitor and method for manufacturing multilayer ceramic capacitor
CN110818407A (en) * 2019-11-05 2020-02-21 广东风华高新科技股份有限公司 X7R characteristic MLCC dielectric material and preparation method thereof
CN110867321A (en) * 2019-12-02 2020-03-06 深圳三环电子有限公司 Multilayer ceramic capacitor and preparation method thereof

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
P. BOMLAI 等: "Compositional analysis and electrical properties of Sb, Mn-doped barium strontium titanate PTCR ceramics with TiO2 and SiO2 sintering additives", 《JOURNAL OF MATERIALS SCIENCE》 *
YUICHI SAKAI 等: "Preparation of Textured BaTiO3 Thick Films by Screen Printing", 《JAPANESE JOURNAL OF APPLIED PHYSICS》 *
周勇辉: "BaTiO3基陶瓷PTC效应研究及阻抗谱分析", 《中国优秀博硕士学位论文全文数据库(硕士) 工程科技Ⅰ辑》 *
杜锋涛 等: "低烧钛酸钡基介电陶瓷的研究进展", 《材料科学与工程学报》 *
王永和 等: "钛酸钡基X8R陶瓷材料的研究进展", 《建材世界》 *

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114956807A (en) * 2021-09-15 2022-08-30 深圳先进电子材料国际创新研究院 Capacitor ceramic chip and preparation method and application thereof
CN114538917A (en) * 2022-01-29 2022-05-27 广东风华高新科技股份有限公司 High-capacity ceramic dielectric material, ceramic capacitor and preparation method thereof
CN116003121A (en) * 2022-12-26 2023-04-25 深圳三环电子有限公司 Ceramic dielectric composition and chip type multilayer ceramic capacitor prepared from same
CN116003121B (en) * 2022-12-26 2023-09-26 深圳三环电子有限公司 Ceramic dielectric composition and chip type multilayer ceramic capacitor prepared from same
CN116425528A (en) * 2023-04-24 2023-07-14 广东省先进陶瓷材料科技有限公司 Dielectric ceramic material and chip type multilayer ceramic capacitor prepared from same
CN116813355A (en) * 2023-06-27 2023-09-29 南充三环电子有限公司 Ceramic dielectric material and preparation method and application thereof
CN116813355B (en) * 2023-06-27 2024-04-19 南充三环电子有限公司 Ceramic dielectric material and preparation method and application thereof

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