CN113345673A - High-frequency ultra-thin type switching power supply - Google Patents
High-frequency ultra-thin type switching power supply Download PDFInfo
- Publication number
- CN113345673A CN113345673A CN202110464645.0A CN202110464645A CN113345673A CN 113345673 A CN113345673 A CN 113345673A CN 202110464645 A CN202110464645 A CN 202110464645A CN 113345673 A CN113345673 A CN 113345673A
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- China
- Prior art keywords
- frequency
- mol
- power supply
- switching power
- frequency transformer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 18
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 15
- 229910000859 α-Fe Inorganic materials 0.000 claims abstract description 15
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000011656 manganese carbonate Substances 0.000 claims abstract description 9
- 229940093474 manganese carbonate Drugs 0.000 claims abstract description 9
- 235000006748 manganese carbonate Nutrition 0.000 claims abstract description 9
- 229910000016 manganese(II) carbonate Inorganic materials 0.000 claims abstract description 9
- XMWCXZJXESXBBY-UHFFFAOYSA-L manganese(ii) carbonate Chemical compound [Mn+2].[O-]C([O-])=O XMWCXZJXESXBBY-UHFFFAOYSA-L 0.000 claims abstract description 9
- 229910000480 nickel oxide Inorganic materials 0.000 claims abstract description 9
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 claims abstract description 9
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000011787 zinc oxide Substances 0.000 claims abstract description 9
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 4
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 4
- 239000004065 semiconductor Substances 0.000 claims abstract description 4
- 230000005540 biological transmission Effects 0.000 abstract description 6
- 239000000696 magnetic material Substances 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
- H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
- H01F1/12—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials
- H01F1/34—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials non-metallic substances, e.g. ferrites
- H01F1/342—Oxides
- H01F1/344—Ferrites, e.g. having a cubic spinel structure (X2+O)(Y23+O3), e.g. magnetite Fe3O4
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Dc-Dc Converters (AREA)
Abstract
The invention relates to the technical field of high-frequency power supplies, and discloses a high-frequency ultra-thin switching power supply which comprises a shell and a circuit board arranged in the shell, wherein an MOS (metal oxide semiconductor) tube, an output rectifier tube and a high-frequency transformer are arranged on the circuit board, and the high-frequency transformer is made of ferrite materials. The ferrite material adopted by the high-frequency transformer comprises 51-56 mol% of ferric oxide, 10-15 mol% of zinc oxide, 31-36 mol% of manganese carbonate, 0.8-3 mol% of nickel oxide and 0.3-1.5 mol% of tin dioxide. The high-frequency transformer of the high-frequency ultrathin switching power supply provided by the invention is made of ferrite material with high resistivity, has small eddy current loss at high temperature and high frequency, can work at 500-2000 KHZ, has the power transmitted by the high-frequency transformer in direct proportion to the working frequency, realizes high transmission power along with the improvement of the working frequency, and further realizes ultrathin. The thickness of the high-frequency ultrathin type switching power supply can be no more than 15 mm.
Description
Technical Field
The invention relates to the technical field of high-frequency power supplies, in particular to a high-frequency ultra-thin type switching power supply.
Background
The rapid development of the electronic information industry has continuously placed new demands on high frequency switching power supplies. It is reported that the global switching power supply market size has increased by 5.9% per year on average over the past few years. Communications, computers and consumer electronics are three major markets for switching power supplies. The development trend of the switching power supply technology is high density, high efficiency, low loss, low noise, and ultra-thin type.
The high frequency of the magnetic material revolutionized the switching power supply. Power magnetic devices are essential key devices in any power supply. It is responsible for the functions of magnetic energy transmission, storage and filtering. Its volume and weight generally account for 20% -30% of the circuit. 20KHZ electronic transformers replace industrial frequency transformers in the early 70 s, so that the volume of the transformers is reduced by 60-80%, and the weight is reduced by 75%. The switch power supply is ultrathin, and the switch power supply is favorable for the installation of products and the control of electromagnetic compatibility. The key factor of the switch power supply ultra-thinning depends on the ultra-thinning of the transformer core, and the high frequency of the magnetic material is the key of the problem. The working frequency of the high-frequency switching power supply on the current market is 50-100 KHZ, the thickness is generally larger than 15mm, and the requirements for higher frequency and ultrathin use cannot be met.
Disclosure of Invention
The invention aims to provide a high-frequency ultra-thin switching power supply, and aims to solve the problems that in the prior art, the working frequency of the high-frequency switching power supply is 50-100 KHZ, the thickness is generally more than 15mm, and the high-frequency ultra-thin switching power supply cannot meet the use requirements of higher frequency and ultra-thin.
The invention is realized in such a way that the high-frequency ultra-thin type switching power supply comprises a shell and a circuit board arranged in the shell, wherein the circuit board is provided with an MOS (metal oxide semiconductor) tube, an output rectifier tube and a high-frequency transformer, and the high-frequency transformer is made of ferrite materials.
Further, the ferrite material adopted by the high-frequency transformer comprises 51-56 mol% of ferric oxide, 10-15 mol% of zinc oxide, 31-36 mol% of manganese carbonate, 0.8-3 mol% of nickel oxide and 0.3-1.5 mol% of tin dioxide.
Further, the high-frequency transformer adopts ferrite materials which comprise 54 mol% of ferric oxide, 11 mol% of zinc oxide, 33 mol% of manganese carbonate, 1.5 mol% of nickel oxide and 0.5 mol% of tin dioxide.
Furthermore, the working frequency of the high-frequency transformer is 500 KHZ-2000 KHZ.
Further, the height of the shell is not more than 15 mm.
Compared with the prior art, the high-frequency transformer of the high-frequency ultrathin type switching power supply adopts a ferrite material with high resistivity, has small eddy current loss at high temperature and high frequency, can work at 500-2000 KHZ, has the transmission power proportional to the working frequency, realizes high transmission power along with the improvement of the working frequency, and further realizes ultrathin. The thickness of the high-frequency ultrathin type switching power supply can be no more than 15 mm.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The invention provides a high-frequency ultra-thin type switching power supply which comprises a shell and a circuit board arranged in the shell, wherein an MOS (metal oxide semiconductor) tube, an output rectifier tube and a high-frequency transformer are arranged on the circuit board, and the high-frequency transformer is made of ferrite materials.
The ferrite material adopted by the high-frequency transformer comprises 51-56 mol% of ferric oxide, 10-15 mol% of zinc oxide, 31-36 mol% of manganese carbonate, 0.8-3 mol% of nickel oxide and 0.3-1.5 mol% of tin dioxide. The ferrite material adopted by the high-frequency transformer has high resistivity and small eddy current loss, can work under 500 KHZ-2000 KHZ, has the transmission power in direct proportion to the working frequency, and greatly improves the transmission power of the high-frequency transformer along with the improvement of the working frequency, thereby realizing the ultra-thinness of the high-frequency switching power supply, and the thickness of the high-frequency ultra-thin switching power supply can be realized to be not more than 15 mm.
Specific example 1:
the components of the ferrite material adopted by the high-frequency transformer of the high-frequency ultra-thin type switching power supply comprise 51mol percent of ferric oxide, 14mol percent of zinc oxide, 31mol percent of manganese carbonate, 2.5mol percent of nickel oxide and 1.5mol percent of tin dioxide.
Specific example 2:
the high-frequency transformer of the high-frequency ultra-thin switching power supply comprises 54 mol% of ferric oxide, 11 mol% of zinc oxide, 33 mol% of manganese carbonate, 1.5 mol% of nickel oxide and 0.5 mol% of tin dioxide.
Specific example 3:
the components of the ferrite material adopted by the high-frequency transformer of the high-frequency ultra-thin type switching power supply comprise 56mol percent of ferric oxide, 10mol percent of zinc oxide, 31mol percent of manganese carbonate, 2mol percent of nickel oxide and 1mol percent of tin dioxide.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (5)
1. A high-frequency ultra-thin type switching power supply is characterized in that: the high-frequency transformer comprises a shell and a circuit board arranged in the shell, wherein the circuit board is provided with an MOS (metal oxide semiconductor) tube, an output rectifier tube and a high-frequency transformer, and the high-frequency transformer is made of ferrite materials.
2. The high frequency ultra-thin switching power supply according to claim 1, wherein: the ferrite material adopted by the high-frequency transformer comprises 51-56 mol% of ferric oxide, 10-15 mol% of zinc oxide, 31-36 mol% of manganese carbonate, 0.8-3 mol% of nickel oxide and 0.3-1.5 mol% of tin dioxide.
3. The high frequency ultra-thin switching power supply according to claim 2, wherein: the components of the ferrite material adopted by the high-frequency transformer comprise 54 mol% of ferric oxide, 11 mol% of zinc oxide, 33 mol% of manganese carbonate, 1.5 mol% of nickel oxide and 0.5 mol% of tin dioxide.
4. The high-frequency ultra-thin switching power supply according to claims 1-3, wherein: the working frequency of the high-frequency transformer is 500 KHZ-2000 KHZ.
5. The high frequency ultra-thin switching power supply according to claim 4, wherein: the height of the shell is not more than 15 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110464645.0A CN113345673A (en) | 2021-04-28 | 2021-04-28 | High-frequency ultra-thin type switching power supply |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110464645.0A CN113345673A (en) | 2021-04-28 | 2021-04-28 | High-frequency ultra-thin type switching power supply |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113345673A true CN113345673A (en) | 2021-09-03 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110464645.0A Pending CN113345673A (en) | 2021-04-28 | 2021-04-28 | High-frequency ultra-thin type switching power supply |
Country Status (1)
| Country | Link |
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| CN (1) | CN113345673A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0536516A (en) * | 1991-07-30 | 1993-02-12 | Tdk Corp | Manganese-zinc ferrite material, its manufacture and high frequency transformer |
| CN1861544A (en) * | 2005-05-11 | 2006-11-15 | 冯建湘 | High frequency low-loss manganese zine ferrite and preparation process thereof |
| CN102311263A (en) * | 2011-09-19 | 2012-01-11 | 苏州冠达磁业有限公司 | Ferrite material with high frequency, low loss and high Bs for LED lighting and switch power transformer |
| CN206807277U (en) * | 2017-06-19 | 2017-12-26 | 常州市创联电源科技股份有限公司 | A kind of ultra-thin switch power supply |
| CN112125655A (en) * | 2020-08-13 | 2020-12-25 | 深圳京鲁计算科学应用研究院 | Preparation method of high-temperature high-frequency low-loss ferrite material |
-
2021
- 2021-04-28 CN CN202110464645.0A patent/CN113345673A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0536516A (en) * | 1991-07-30 | 1993-02-12 | Tdk Corp | Manganese-zinc ferrite material, its manufacture and high frequency transformer |
| CN1861544A (en) * | 2005-05-11 | 2006-11-15 | 冯建湘 | High frequency low-loss manganese zine ferrite and preparation process thereof |
| CN102311263A (en) * | 2011-09-19 | 2012-01-11 | 苏州冠达磁业有限公司 | Ferrite material with high frequency, low loss and high Bs for LED lighting and switch power transformer |
| CN206807277U (en) * | 2017-06-19 | 2017-12-26 | 常州市创联电源科技股份有限公司 | A kind of ultra-thin switch power supply |
| CN112125655A (en) * | 2020-08-13 | 2020-12-25 | 深圳京鲁计算科学应用研究院 | Preparation method of high-temperature high-frequency low-loss ferrite material |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210903 |