CN113337819A - 一种镀膜设备 - Google Patents
一种镀膜设备 Download PDFInfo
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- 238000000576 coating method Methods 0.000 title claims abstract description 72
- 238000004544 sputter deposition Methods 0.000 claims abstract description 18
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- 238000000151 deposition Methods 0.000 claims description 14
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 238000005728 strengthening Methods 0.000 claims description 3
- 238000009501 film coating Methods 0.000 abstract description 13
- 239000007888 film coating Substances 0.000 abstract description 13
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- 229910052786 argon Inorganic materials 0.000 description 7
- 238000012827 research and development Methods 0.000 description 7
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 5
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000007747 plating Methods 0.000 description 4
- 239000013077 target material Substances 0.000 description 4
- 238000005086 pumping Methods 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
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Abstract
本发明公开了一种镀膜设备，包括镀膜腔体，围绕镀膜腔体的外周边设置有多个法兰口，其中一个法兰口为抽气口，其余的法兰口中，每个法兰口上配置一个DLC镀膜源，所述DLC镀膜源包括但不限于Sputtering溅射源、离子源、多弧源和过滤弧源；整个镀膜设备包含至少一个离子源、和/或Sputtering溅射源、和/或多弧源、和/或过滤弧源。本发明的镀膜设备，具有多功能，包含多种DLC镀膜源制备DLC膜层，并在同一台设备中一并实现镀膜、退膜功能，实现一机多用。
Description
技术领域
本发明涉及一种镀膜设备，属于真空镀膜领域。
背景技术
通常真空镀膜设备，功能配置单一，普遍配置单独的Sputtering溅射源(磁控溅射源)，或单独的DLC(Diamond-like C氩气bon，类金刚石)源，或单独的弧源等用于沉积DLC膜层。缺乏具有多功能的镀膜设备，多种方法沉积DLC膜层以及镀膜、退膜一体的真空镀膜设备。
发明内容
本发明的目的是克服现有技术的缺陷，提供一种镀膜设备，具有多功能，包含多种DLC镀膜源制备DLC膜层，并在同一台设备中一并实现镀膜、退膜功能，实现一机多用。
实现上述目的的技术方案是：一种镀膜设备，包括镀膜腔体，围绕镀膜腔体的外周边设置有多个法兰口，其中一个法兰口为抽气口，其余的法兰口中，每个法兰口上配置一个DLC镀膜源，所述DLC镀膜源包括但不限于Sputtering溅射源、离子源、多弧源和过滤弧源；
整个镀膜设备包含至少一个离子源、和/或Sputtering溅射源、和/或多弧源、和/或过滤弧源；
所述离子源用于离子清洗，或用于增强等离子体沉积DLC膜层，或用于氧化退膜。
上述的一种镀膜设备，其中，所述氧化退膜的膜层包括但不限于DLC等碳膜。
上述的一种镀膜设备，其中，所述离子源包括但不限于阳极层离子源、射频离子源、考夫曼离子源、霍尔离子源和高频离子源。
本发明的镀膜设备，为多功能镀膜设备，包含多种DLC镀膜源制备DLC膜层，并在同一台设备中一并实现镀膜、退膜功能。该镀膜设备可以作为生产设备，更可以作为技术研发设备，高效沉积DLC膜层及碳膜等的氧化处理。为本领域技术研发提供便捷，极大提高研发效率。
附图说明
图1为本发明的镀膜设备的结构示意图；
图2为本发明的镀膜设备的使用状态图。
具体实施方式
为了使本技术领域的技术人员能更好地理解本发明的技术方案，下面结合附图对其具体实施方式进行详细地说明：
请参阅图1和图2，本发明的实施例，一种镀膜设备，包括镀膜腔体10，围绕镀膜腔体10的外周边设置有八个法兰口1～8，其中一个法兰口8为抽气口，其余的七个法兰口中，每个法兰口上配置一个DLC镀膜源，DLC镀膜源包括但不限于Sputtering溅射源、离子源、多弧源和过滤弧源；整个镀膜设备包含三个离子源、两个Sputtering溅射源(简称SPT)、一个多弧源和一个过滤弧源。两个Sputtering溅射源分别设置在法兰口1和法兰口5，三个离子源分别设置在法兰口2、法兰口4和法兰口7；法兰口设置在法兰口3，过滤弧源设置在法兰口6。三个离子源中，一个离子源用于离子清洗；一个离子源用于增强等离子体沉积DLC膜层；一个离子源用于氧化退膜，氧化退膜的膜层包括但不限于DLC等碳膜。离子源包括但不限于阳极层离子源、射频离子源、考夫曼离子源、霍尔离子源和高频离子源。
本发明的镀膜设备，在加工时，根据需要，围绕镀膜腔体10的圆周设置的法兰口的数量可以改变，其中一个法兰口为抽气口，其余的法兰口中，每个法兰口上配置一个DLC镀膜源，DLC镀膜源的位置、数量，可根据需求调整。整个镀膜设备包含至少一个离子源、和/或Sputtering溅射源、和/或多弧源、和/或过滤弧源；离子源用于离子清洗，或用于增强等离子体沉积DLC膜层，或用于氧化退膜。
本发明的镀膜设备，在工作时，通过抽气口外接抽真空设备，实现镀膜腔体10内需要的真空度。
本发明的镀膜设备，可以实现包括但不限于如下功能：
(1)将被镀工件用纯水清洗、烘干，再置于镀膜腔体10内，镀膜腔体10内抽真空至4.0E-5Torr时，选用离子源进行离子清洗，清洗结束后使用离子源开始镀膜。步骤包括：开启一个或多个离子源电源，通入氩气,乙炔气体，沉积DLC膜层。
(2)将被镀工件用纯水清洗、烘干，再置于镀膜腔体10内，镀膜腔体10内抽真空至4.0E-5Torr时，选用离子源进行离子清洗，清洗结束后使用SPT溅射源开始镀膜，靶材为C靶(简称SPT C溅射源)。步骤包括：开启一个或多个SPT C溅射源电源，通入氩气，沉积DLC膜层。
(3)将被镀工件用纯水清洗、烘干，再置于镀膜腔体10内，镀膜腔体10内抽真空至4.0E-5Torr时，选用离子源进行离子清洗，清洗结束后使用多弧源开始镀膜，靶材为C靶。步骤包括：开启一个或多个多弧源电源，沉积DLC膜层。
(4)将被镀工件用纯水清洗、烘干，再置于镀膜腔体10内，镀膜腔体10内抽真空至4.0E-5Torr时，选用离子源进行离子清洗，清洗结束后使用过滤弧源开始镀膜，靶材为C靶。步骤包括：开启一个或多个过滤弧源电源，沉积DLC膜层。
(5)将被镀工件用纯水清洗、烘干，再置于镀膜腔体10内，镀膜腔体10内抽真空至4.0E-5Torr时，选用离子源进行离子清洗，清洗结束后使用多弧源和过滤弧源开始镀膜，靶材为C靶。步骤包括：开启多弧源和过滤弧源电源，沉积DLC膜层。
(6)将被镀工件用纯水清洗、烘干，再置于镀膜腔体10内，镀膜腔体10内抽真空至4.0E-5Torr时，选用离子源进行离子清洗，清洗结束后使用离子源和过滤弧源开始镀膜，过滤弧源靶材为C靶。步骤包括：开启离子源电源和过滤弧源电源，通入氩气,乙炔气体，沉积DLC膜层。
(7)将被镀工件用纯水清洗、烘干，再置于镀膜腔体10内，镀膜腔体10内抽真空至4.0E-5Torr时，选用离子源进行离子清洗，清洗结束后使用离子源和SPT C溅射源开始镀膜。步骤包括：开启离子源电源和SPT C溅射源电源，通入氩气,乙炔气体，沉积DLC膜层。
(8)将被镀工件用纯水清洗、烘干，再置于镀膜腔体10内，镀膜腔体10内抽真空至4.0E-5Torr时，选用离子源进行离子清洗，清洗结束后使用离子源、SPT C溅射源、C靶过滤弧源开始镀膜。步骤包括：开启离子源电源、SPT C溅射源电源、过滤弧源电源，通入氩气,乙炔气体，沉积DLC膜层。
(9)退膜实施例：将待退工件置于镀膜腔体10内，镀膜腔体10内抽真空至2.0E-4Torr时，开启离子源电源，通入氧气、氩气，退去工件上的膜层。
各实施例为实际应用举例，非本申请的限制；实施所用电离气体氩气、反应气体乙炔，为实施例举例，非本申请的限制，还可以用其他惰性气体、C-H等气体。
本发明的镀膜设备，包含多种DLC镀膜源用于制备DLC膜层，并在同一台设备中一并实现镀膜、退膜功能，该镀膜设备可以作为生产设备，更可以作为技术研发设备，高效沉积DLC膜层及碳膜氧化处理。为本领域技术研发提供便捷，极大提高研发效率。
综上所述，本发明的镀膜设备，具有多功能，包含多种DLC镀膜源制备DLC膜层，并在同一台设备中一并实现镀膜、退膜功能。一机多用，为镀膜领域设备开发、膜层开发提供新思路，为镀膜领域的技术研发提供便捷，极大提高研发效率。
本技术领域中的普通技术人员应当认识到，以上的实施例仅是用来说明本发明，而并非用作为对本发明的限定，只要在本发明的实质精神范围内，对以上所述实施例的变化、变型都将落在本发明的权利要求书范围内。
Claims (3)
1.一种镀膜设备，其特征在于，包括镀膜腔体，围绕镀膜腔体的外周边设置有多个法兰口，其中一个法兰口为抽气口，其余的法兰口中，每个法兰口上配置一个DLC镀膜源，所述DLC镀膜源包括但不限于Sputtering溅射源、离子源、多弧源和过滤弧源；
整个镀膜设备包含至少一个离子源、和/或Sputtering溅射源、和/或多弧源、和/或过滤弧源；
所述离子源用于离子清洗，或用于增强等离子体沉积DLC膜层，或用于氧化退膜。
2.根据权利要求1所述的一种镀膜设备，其特征在于，所述氧化退膜的膜层包括但不限于DLC等碳膜。
3.根据权利要求1所述的一种镀膜设备，其特征在于，所述离子源包括但不限于阳极层离子源、射频离子源、考夫曼离子源、霍尔离子源和高频离子源。
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