CN113328232A - Polarization-adjustable terahertz photoconductive antenna and preparation method thereof - Google Patents
Polarization-adjustable terahertz photoconductive antenna and preparation method thereof Download PDFInfo
- Publication number
- CN113328232A CN113328232A CN202110609440.7A CN202110609440A CN113328232A CN 113328232 A CN113328232 A CN 113328232A CN 202110609440 A CN202110609440 A CN 202110609440A CN 113328232 A CN113328232 A CN 113328232A
- Authority
- CN
- China
- Prior art keywords
- polarization
- layer
- antenna
- electrodes
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The invention discloses a polarization-adjustable terahertz photoconductive antenna and a preparation method thereof, which are applied to a terahertz spectrum system and comprise the following steps: the semiconductor substrate layer, the dielectric layer and the pattern layer; the pattern layer is tightly attached to the surface of the dielectric layer, and the dielectric layer is positioned on the surface of the semiconductor substrate layer; the pattern layer comprises an electrode structure, and the electrode structure comprises 4 antenna electrodes which are arranged in a central symmetry manner; by combining the symmetrical structure of the electrodes and the method for applying the bias voltage to the epitaxial electrodes, the anisotropic linear polarization adjustable terahertz radiation multiplied by 45 degrees is finally realized, and the structure can realize the polarization adjustability in 8 directions; the use of a polarizer in the terahertz time-domain spectroscopy system is reduced, and the signal-to-noise ratio of the terahertz spectrum of the measured substance is improved.
Description
Technical Field
The invention relates to an antenna tool, in particular to a polarization-adjustable terahertz photoconductive antenna and a preparation method thereof.
Background
Compared with other frequency bands, the hertz frequency band has slow development of related technologies due to lack of efficient and practical terahertz sources, and the research on terahertz wave bands is promoted by the appearance of an ultrafast optical technology for generating terahertz waves.
The existing terahertz sources mainly comprise two types: the terahertz wave detector has the advantages of being simple and compact, easy to couple with an optical fiber and the like, and is widely applied to terahertz wave emission and detection.
In a typical THz-TDS system, to detect the terahertz spectrum of certain substances (having optical anisotropy in the terahertz band), a pair of terahertz photoconductive dipole emitter/detector antennas and three rotatable wire grid polarizers are used. It allows only the sampling of terahertz waves with the polarization component corrected.
However, the main disadvantages of this arrangement are the deterioration of the signal-to-noise ratio (SNR) of the transmitting/detecting electrodes according to Malu's law at certain polarizer angles, the addition of a rotatable wire grid polarizer also resulting in a complicated optical path of the whole system, and the low absorption of femtosecond laser light by the photoconductive antenna substrate.
Disclosure of Invention
The invention aims to solve the technical problems that the signal-to-noise ratio of the terahertz spectrum of the anisotropic substance obtained from the traditional THz-TDS system is low, and the optical path of the whole THz-TDS system is complicated; in order to solve the technical problem, the invention provides the polarization-adjustable terahertz photoconductive antenna and the preparation method thereof, and the research on the polarization-variable terahertz photoconductive antenna can improve the signal-to-noise ratio of the terahertz spectrum of the optical anisotropic substance and lay a foundation for a high-integration THz-TDS system.
The invention is realized by the following technical scheme:
this scheme provides an adjustable terahertz of polarization photoconduction antenna, is applied to terahertz spectroscopy system now, includes: the semiconductor substrate layer, the dielectric layer and the pattern layer;
the pattern layer is tightly attached to the surface of the dielectric layer, and the dielectric layer is positioned on the surface of the semiconductor substrate layer;
the pattern layer comprises an electrode structure which comprises 4 antenna electrodes which are arranged in a central symmetry mode.
The dielectric layer is used as a transition layer between the antenna electrode and the substrate material, so that the electrode is better attached to the substrate.
The further optimization scheme is that the 4 antenna electrodes are triangular electrodes, 4 isosceles right-angle triangular electrodes are obtained by uniformly opening two sides of a square electrode along a diagonal line and are arranged in a centrosymmetric mode, and the right angles of the triangular electrodes point to the symmetric center.
Because the antenna electrode structure of the polarization-adjustable terahertz photoconductive antenna is small, the electrode needs to be processed,
the further optimization scheme is that the antenna further comprises an extension electrode, and the middle point of the longest side of each antenna electrode is connected with one extension electrode through one extension line.
The further optimization scheme is that the device also comprises a nanometer disc array; the nanometer disc array is a square array formed by a plurality of nanometer discs, the nanometer disc array is arranged at the symmetrical center of the 4 antenna electrodes, and four vertex angles of the nanometer disc array are positioned on the diagonal lines of the square electrodes.
The further optimization scheme is that the epitaxial electrode is a cylindrical electrode with the radius r, and the epitaxial wire is connected to the side face of the epitaxial electrode.
The further optimization scheme is that the width of the extension line is 10-20 mu m, and the length of the extension line is 6.3-6.6 mu m.
The further optimization scheme is that the longest side length of the two triangular electrodes is l, and the distance le between the two triangular electrodes opposite to each other at a right angle is 20-40 mu m; the gap between two adjacent triangular electrodes is
The further optimization scheme is that the material of the semiconductor substrate is LT-GaAs, LT-GaAs or InP;
the dielectric layer is made of titanium;
the material of the pattern layer is gold.
The further optimization scheme is that the thickness of the semiconductor substrate layer is 200-350 mu m;
the thickness of the dielectric layer is 20-30 nm;
the thickness of the pattern layer is 200-300 nm.
The polarization adjustable photoconductive antenna provided by the scheme can better detect the terahertz spectrum with optical anisotropic substances in the terahertz waveband, and the polarization direction of the photoconductive antenna is mainly controlled by four antenna electrodes. When the femtosecond laser irradiates the surface of the substrate, electron-hole pairs (photogenerated carriers) can be generated on the substrate medium, the carriers can accelerate under the action of bias voltage to generate photogenerated current when bias voltage is applied to the epitaxial electrode, the changed current radiates out electromagnetic waves, and the generated electromagnetic waves fall in a terahertz frequency band because the incident laser is in a femtosecond magnitude.
The polarization direction of terahertz radiated by the photoconductive antenna is related to the electrodes and the bias voltage. The structure of the electrodes determines the possible application method of the bias voltage, which in turn determines the movement and distribution of the carriers in the photoconductive antenna substrate, while the radiation polarization of the terahertz waves is mainly dependent on the direction of movement of the carriers. The structure can realize polarization adjustability in 8 directions by combining the symmetrical structure of the electrodes and the application method of the bias voltage.
The nano disc array has the functions of improving the absorption of the substrate layer to laser, providing a composite point for an electron-hole pair, reducing the service life of a current carrier and improving the terahertz radiation bandwidth.
When a beam of femtosecond laser with photon energy higher than the band width of the semiconductor forbidden band irradiates the surface of the dielectric layer in the gap between the antenna electrodes, the dielectric of the substrate layer can generate optical transition, thereby generating electron-hole pairs.
The relationship between the forbidden band width and the corresponding wavelength is as follows:
h is the Planck constant, ν is the frequency of the laser, c is the speed of light, and λ is the laser wavelength. The laser wavelength required for the substrate material used can be calculated from equation (1). The density of photogenerated carriers is determined by the photon energy absorbed by the substrate layer, the electron density (n)e) Hole density (n)h) The number of excited electrons (N)/laser is focused on the volume of the substrate. In which the number of excited electrons (N) and the laser lightPower-dependent:
wherein P isLIs the power of a single pulse, DtIs the pulse duration, alpha is the absorption of the laser by the substrate, EgIs the photon energy of the laser.
And applying a bias voltage to the corresponding epitaxial electrode, wherein the generated carriers can move with the acceleration of the bias voltage, the higher the bias voltage is, the faster the acceleration is, the greater the speed change of the electron-hole pairs in unit time is, and the larger the magnitude of the photocurrent is. Magnitude i of photocurrentcp(t) is obtained by integrating the speed of the carriers, the density of the photogenerated carriers and the light pulse intensity parameters:
ipc(t)＝∫iopt(t-t’)[e·n(t’)·V(t’)]dt’ (3)
wherein ioptFor the optical pulse intensity parameter, n (t ') is the photogenerated carrier density as a function of time, and V (t') is the average electron drift rate. Terahertz radiation electric ETHz(t) is proportional to the differential of the photocurrent:
it can be seen from the equations (2), (3) and (4) that the radiation electric field increases with the increase of the bias voltage and the optical power. However, the polarization-adjustable terahertz photoconductive antenna also has the problems that when the bias voltage is too large, the electrodes are easy to break down and the space charge field shielding effect is caused, so that the applied bias voltage is not suitable to be too large. The shielding effect of space charge is that under the action of an external direct current bias electric field, photogenerated carriers of a substrate form a built-in electric field in the medium, wherein the built-in electric field is opposite to the direction of the external electric field. Due to the shielding effect of space charge, can
The reduction is obvious, and the formula is as follows:
wherein the content of the first and second substances,
is the polarizability of space charge generation, and α is a geometric constant.
The terahertz spectrum with adjustable polarization of the optical anisotropic material in the terahertz waveband can be better measured. The photoconductive antenna structure with adjustable polarization not only reduces the use of a polarizer in a terahertz time-domain spectroscopy system, but also improves the signal-to-noise ratio of the terahertz spectrum of a measured substance.
Four contact electrodes are etched on an LT-GaAs substrate of the photoconductive antenna, and the anisotropic linear polarization adjustable terahertz radiation multiplied by 45 degrees is finally realized. The radiation characteristics are the same at 45 °, 135 °, 225 ° and 315 °, the bandwidth energy is not less than 1THz, and the radiation intensity can be higher than 0.4V. The radiation characteristics in the horizontal and vertical polarization directions are the same. The electrode length of the horizontal and vertical polarization directions is shorter than that of the four radiation directions of 45 degrees, 135 degrees, 225 degrees and 315 degrees, and the electrode gap is wider than that of the four radiation directions of 45 degrees, 135 degrees, 225 degrees and 315 degrees, so that the terahertz radiation intensity generated by the antenna in the horizontal and vertical polarization directions is reduced.
The scheme also provides a method for preparing the polarization-adjustable terahertz photoconductive antenna, which is used for preparing the polarization-adjustable terahertz photoconductive antenna and comprises the following steps: (please supplement detailed procedures)
S1, selecting a gallium arsenide wafer prepared by low-temperature growth as a semiconductor substrate layer;
s2, spin-coating a layer of photoresist on the semiconductor substrate layer, and baking for 2 minutes at 100 ℃;
s3, carrying out heat-assisted ultraviolet imprinting by using a soft template with a submicron precision nano-pattern structure, transferring the metal nano-layer pattern to an adhesive film, and removing the soft template;
s4, removing the nanoimprint resist and the photoresist by using a plasma etching technology in a vacuum mode, and exposing the gallium arsenide wafer for 2-3 seconds;
s5, rinsing with KOH solution, and baking at 100 ℃ for 2 minutes;
s6, after covering the area outside the metal area to be etched by using the metal baffle with the opening, firstly plating a layer of Ti with the thickness of 20nm on the area to be etched by sputtering, and then plating a layer of Au with the thickness of 200 nm;
and S7, washing the photoresist by using a photoresist solution to obtain the complete polarization-adjustable terahertz photoconductive antenna.
Compared with the prior art, the invention has the following advantages and beneficial effects:
1. according to the polarization-adjustable terahertz photoconductive antenna and the preparation method thereof, provided by the invention, the symmetric structure of the antenna electrode and the application of the bias voltage of the epitaxial electrode are combined, and the anisotropic linear polarization-adjustable terahertz radiation multiplied by 45 degrees is finally realized, and the structure can realize the polarization adjustment in 8 directions.
2. The polarization-adjustable terahertz photoconductive antenna and the preparation method thereof not only reduce the use of polarizers in a terahertz time-domain spectroscopy system, but also improve the signal-to-noise ratio of the terahertz spectrum of a measured substance.
Drawings
The accompanying drawings, which are included to provide a further understanding of the embodiments of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the principles of the invention. In the drawings:
FIG. 1 is a schematic diagram of a polarization tunable terahertz photoconductive antenna according to the present invention;
FIG. 2 is a schematic diagram of a front structure of an electrode structure unit of a polarization tunable terahertz photoconductive antenna;
FIG. 3 is a partially enlarged schematic view of the front structure of the electrode structure unit according to the present invention;
FIG. 4 is a schematic diagram showing the effect of the absorption rate of femtosecond laser on the structure of the invention;
FIG. 5 is a schematic diagram of a terahertz wave generated by the structure of the present invention;
FIG. 6 is a graph of photocurrent generated by the inventive structure;
FIG. 7 is a graph of an electric field of terahertz radiation generated by the structure of the present invention.
Reference numbers and corresponding part names:
1-semiconductor substrate layer, 2-dielectric layer, 3-electrode structure, 4-epitaxial electrode, 5-epitaxial line and 6-nano disk array.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to examples and accompanying drawings, and the exemplary embodiments and descriptions thereof are only used for explaining the present invention and are not meant to limit the present invention.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. However, it will be apparent to one of ordinary skill in the art that: it is not necessary to employ these specific details to practice the present invention. In other instances, well-known structures, circuits, materials, or methods have not been described in detail so as not to obscure the present invention.
Throughout the specification, reference to "one embodiment," "an embodiment," "one example," or "an example" means: the particular features, structures, or characteristics described in connection with the embodiment or example are included in at least one embodiment of the invention. Thus, the appearances of the phrases "one embodiment," "an embodiment," "one example" or "an example" in various places throughout this specification are not necessarily all referring to the same embodiment or example. Furthermore, the particular features, structures, or characteristics may be combined in any suitable combination and/or sub-combination in one or more embodiments or examples. Further, those of ordinary skill in the art will appreciate that the illustrations provided herein are for illustrative purposes and are not necessarily drawn to scale. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
In the description of the present invention, it is to be understood that the terms "front", "rear", "left", "right", "upper", "lower", "vertical", "horizontal", "high", "low", "inner", "outer", etc. indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and therefore, are not to be construed as limiting the scope of the present invention.
Example 1
As shown in fig. 1 and fig. 2, the terahertz photoconductive antenna with adjustable polarization of the present invention is applied to a terahertz spectroscopy system, and includes: the semiconductor substrate layer 1, the dielectric layer 2 and the pattern layer;
the pattern layer is tightly attached to the surface of the dielectric layer 2, and the dielectric layer 2 is positioned on the surface of the semiconductor substrate layer 1;
the pattern layer comprises an electrode structure which comprises 4 antenna electrodes which are arranged in a central symmetry mode.
As shown in fig. 3, the 4 antenna electrodes are triangular electrodes, and 4 isosceles right triangular electrodes are formed by opening a square electrode uniformly along two sides of a diagonal line and are arranged in a central symmetry manner, and the right angle of the triangular electrode points to the symmetry center.
When femtosecond laser is incident on the surface of the substrate between the electrode gaps, electromagnetic waves in a terahertz frequency band can be radiated, and different electrostatic field distributions can be formed on the photoconductive antenna by applying different voltages, so that linearly polarized terahertz radiation in different directions can be generated.
The antenna further comprises extension electrodes 4, and the middle point of the longest side of each antenna electrode is connected with one extension electrode 4 through an extension line 5.
Also comprises a nanometer disc array 6; nanometer disc array 6 is the square array that a plurality of nanometer discs constitute, and nanometer disc array 6 arranges at 4 antenna electrode's symmetric center, and four apex angles of nanometer disc array 6 are located the diagonal of square electrode, and each nanometer disc height is 0.2um in nanometer disc array 6, and the radius is 0.1um, and the cycle is 0.55 um. The nano-discs are directly embedded in the substrate.
The extension electrode 4 is a cylindrical electrode with a radius r of 1mm, and the extension line 5 is connected to the side surface of the extension electrode 4.
The width of the extension line is 20 μm and the length is 6.44 μm.
The longest side length l of the two triangular electrodes is 100 mu m, and the space le between the two triangular electrodes which are opposite at right angle is 20 mu m; the gap between two adjacent triangular electrodes is
The semiconductor substrate layer 1 is made of LT-GaAs and has the thickness of 350 mu m; the substrate has the advantages that the electron-hole lifetime is controllable; the electrode structure elements 3 of each period occupy an area of the substrate layer of 10mm x 10 mm.
The medium layer 2 is made of titanium; the thickness is 20 μm;
the pattern layer was gold and had a thickness of 0.2 μm.
As shown in fig. 4, the structure designed by this embodiment has improved absorption of femtosecond laser. Since the substrate selected is LT-GaAs with a band gap of 1.42eV, the wavelength of the femtosecond pulse laser is less than 873 nm. With a selected wavelength of 780nm and a beam waist size w0The femtosecond laser with the diameter of 10 mu m is irradiated on the surface of the substrate of the gap of the polarization-adjustable terahertz photoconductive antenna, the substrate absorbs photon energy to generate carriers, the carriers move in an accelerating mode under the action of bias voltage to generate variable photo-generated current, and the variable current generates electromagnetic waves.
The terahertz wave generated by the polarization-adjustable terahertz photoconductive antenna is shown in fig. 5, the graph of the photocurrent generated by the polarization-adjustable terahertz photoconductive antenna is shown in fig. 6, and the graph of the terahertz radiation electric field generated by the polarization-adjustable terahertz photoconductive antenna is shown in fig. 7.
Example 2
The embodiment provides the method for manufacturing the polarization-adjustable terahertz photoconductive antenna in the previous embodiment, and the manufacturing process of the polarization-adjustable photoconductive antenna comprises the steps of designing and manufacturing an optical mask, coating an electrode structure in a sputtering mode, photoetching a micro-nano structure, IBE etching an electrode, removing photoresist, and finally cutting to obtain a single polarization-adjustable photoconductive antenna structure.
The method comprises the following specific steps:
1. and (4) preparing the material. And selecting a gallium arsenide wafer with proper size and prepared by low-temperature growth.
2. A layer of photoresist is spin-coated on LT-GaAs, and then the photoresist is baked for 2 minutes at the temperature of 100 ℃.
3. Performing heat-assisted ultraviolet imprinting by using a soft template with a submicron precision nano-pattern structure to transfer the metal nano-layer pattern to an adhesive film, and removing the soft template;
4. removing the nanoimprint resist and the photoresist by using a plasma etching technology in a vacuum mode, and exposing the low-temperature gallium arsenide wafer for 2-3 seconds;
5. after rinsing with KOH solution, baking for 2 minutes at 100 ℃;
6. after covering the area outside the metal area to be etched by using the metal baffle with the opening, firstly plating a layer of Ti with the thickness of 20nm on the area to be etched by sputtering, and then plating a layer of Au with the thickness of 200 nm;
7. and (4) cleaning the photoresist by using a degumming solution to obtain the complete polarization-adjustable terahertz photoconductive antenna.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are merely exemplary embodiments of the present invention, and are not intended to limit the scope of the present invention, and any modifications, equivalent substitutions, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (10)
1. The utility model provides a terahertz photoconduction antenna that polarization is adjustable, is applied to terahertz spectroscopy system now, its characterized in that includes: the semiconductor substrate layer (1), the dielectric layer (2) and the pattern layer;
the pattern layer is tightly attached to the surface of the dielectric layer (2), and the dielectric layer (2) is positioned on the surface of the semiconductor substrate layer (1);
the pattern layer comprises an electrode structure (3), and the electrode structure (3) comprises 4 antenna electrodes which are arranged in a central symmetry mode.
2. The polarization-tunable terahertz photoconductive antenna of claim 1, wherein the 4 antenna electrodes are triangular electrodes, 4 isosceles right triangular electrodes are arranged in a central symmetry manner and are obtained by uniformly opening a square electrode along two sides of a diagonal line, and the right angle of the triangular electrode points to the symmetry center.
3. The polarization tunable terahertz photoconductive antenna of claim 2, wherein the pattern layer further comprises epitaxial electrodes (4), and the middle point of the longest side of each antenna electrode is connected with one epitaxial electrode (4) through one epitaxial line (5).
4. The polarization tunable terahertz photoconductive antenna according to claim 3, further comprising a nano-disc array (6); the nanometer disc array (6) is a square array formed by a plurality of nanometer discs, the nanometer disc array (6) is arranged at the symmetrical center of the 4 antenna electrodes, and four vertex angles of the nanometer disc array (6) are positioned on the diagonal lines of the square electrodes.
5. The polarization tunable terahertz photoconductive antenna according to claim 3, wherein the epitaxial electrode (4) is a cylindrical electrode with a radius r, and the epitaxial line (5) is connected to the side of the epitaxial electrode (4).
6. The polarization tunable terahertz photoconductive antenna of claim 5, wherein the epitaxial line width is 10-20 μm and the length is 6.3-6.6 μm.
7. The polarization-tunable terahertz photoconductive antenna as claimed in claim 2, wherein the longest side length of the triangular electrode is l, and the distance le between two triangular electrodes opposite to each other at right angle is 20-40 μm; the gap between two adjacent triangular electrodes is
8. The polarization tunable terahertz photoconductive antenna of claim 1,
the semiconductor substrate layer (1) is made of LT-GaAs, LT-GaAs or InP;
the medium layer (2) is made of titanium;
the material of the pattern layer is gold.
9. The polarization tunable terahertz photoconductive antenna of claim 1,
the thickness of the semiconductor substrate layer (1) is 200-350 mu m;
the thickness of the dielectric layer (2) is 20-30 nm;
the thickness of the pattern layer is 200-300 nm.
10. A method of manufacturing a polarization tunable terahertz photoconductive antenna for manufacturing any one of the polarization tunable terahertz photoconductive antennas of claims 1 to 9, comprising the steps of:
s1, selecting a gallium arsenide wafer prepared by low-temperature growth as a semiconductor substrate layer;
s2, spin-coating a layer of photoresist on the semiconductor substrate layer, and baking for 2 minutes at 100 ℃;
s3, carrying out heat-assisted ultraviolet imprinting by using a soft template with a submicron precision nano-pattern structure, transferring the metal nano-layer pattern to an adhesive film, and removing the soft template;
s4, removing the nanoimprint resist and the photoresist by using a plasma etching technology in a vacuum mode, and exposing the gallium arsenide wafer for 2-3 seconds;
s5, rinsing with KOH solution, and baking at 100 ℃ for 2 minutes;
s6, after covering the area outside the metal area to be etched by using the metal baffle with the opening, firstly plating a layer of Ti with the thickness of 20nm on the area to be etched by sputtering, and then plating a layer of Au with the thickness of 200 nm;
and S7, washing the photoresist by using a photoresist solution to obtain the complete polarization-adjustable terahertz photoconductive antenna.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110609440.7A CN113328232B (en) | 2021-06-01 | 2021-06-01 | Polarization-adjustable terahertz photoconductive antenna and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110609440.7A CN113328232B (en) | 2021-06-01 | 2021-06-01 | Polarization-adjustable terahertz photoconductive antenna and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113328232A true CN113328232A (en) | 2021-08-31 |
| CN113328232B CN113328232B (en) | 2022-05-13 |
Family
ID=77423034
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110609440.7A Active CN113328232B (en) | 2021-06-01 | 2021-06-01 | Polarization-adjustable terahertz photoconductive antenna and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113328232B (en) |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20100073015A (en) * | 2008-12-22 | 2010-07-01 | 한국전자통신연구원 | The thz tx/rx module has silicon ball lens is bonded to antenna device and manufacturing method thereof |
| CN202523844U (en) * | 2012-04-27 | 2012-11-07 | 杭州电子科技大学 | Dual-frequency terahertz-wave antenna of dual-dipole structure |
| CN104167656A (en) * | 2014-06-20 | 2014-11-26 | 上海师范大学 | Terahertz photoconductive antenna and manufacture thereof |
| US20140346357A1 (en) * | 2012-01-23 | 2014-11-27 | The Regents Of The University Of Michigan | Photoconductive device with plasmonic electrodes |
| CN105923600A (en) * | 2016-06-02 | 2016-09-07 | 上海师范大学 | Amplitude adjustable terahertz near field excitation type molecular sensor and production method thereof |
| CN106299979A (en) * | 2016-11-14 | 2017-01-04 | 郭玮 | A kind of THz wave generator based on Graphene |
| CN107946779A (en) * | 2017-10-26 | 2018-04-20 | 西安理工大学 | A kind of terahertz light conductance aerial array |
| CN109490219A (en) * | 2018-12-27 | 2019-03-19 | 中国电子科技集团公司第四十研究所 | A kind of terahertz wave band polarization characteristic parameter test device |
| CN109728428A (en) * | 2018-12-29 | 2019-05-07 | 中国科学院半导体研究所 | Photoconductive antenna and preparation method based on sub-wavelength structure modulation terahertz emission |
| CN110441929A (en) * | 2019-08-14 | 2019-11-12 | 上海大学 | Based on tunable THz wave transmitter of magneto-electronics array and preparation method thereof |
| CN110690569A (en) * | 2019-09-10 | 2020-01-14 | 天津大学 | Terahertz photoconductive transmitting antenna with microstructure integrated on transmission line |
| CN112268617A (en) * | 2020-09-24 | 2021-01-26 | 西安理工大学 | Detection antenna array capable of simultaneously detecting terahertz wave polarization degree and time domain waveform |
-
2021
- 2021-06-01 CN CN202110609440.7A patent/CN113328232B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20100073015A (en) * | 2008-12-22 | 2010-07-01 | 한국전자통신연구원 | The thz tx/rx module has silicon ball lens is bonded to antenna device and manufacturing method thereof |
| US20140346357A1 (en) * | 2012-01-23 | 2014-11-27 | The Regents Of The University Of Michigan | Photoconductive device with plasmonic electrodes |
| CN202523844U (en) * | 2012-04-27 | 2012-11-07 | 杭州电子科技大学 | Dual-frequency terahertz-wave antenna of dual-dipole structure |
| CN104167656A (en) * | 2014-06-20 | 2014-11-26 | 上海师范大学 | Terahertz photoconductive antenna and manufacture thereof |
| CN105923600A (en) * | 2016-06-02 | 2016-09-07 | 上海师范大学 | Amplitude adjustable terahertz near field excitation type molecular sensor and production method thereof |
| CN106299979A (en) * | 2016-11-14 | 2017-01-04 | 郭玮 | A kind of THz wave generator based on Graphene |
| CN107946779A (en) * | 2017-10-26 | 2018-04-20 | 西安理工大学 | A kind of terahertz light conductance aerial array |
| CN109490219A (en) * | 2018-12-27 | 2019-03-19 | 中国电子科技集团公司第四十研究所 | A kind of terahertz wave band polarization characteristic parameter test device |
| CN109728428A (en) * | 2018-12-29 | 2019-05-07 | 中国科学院半导体研究所 | Photoconductive antenna and preparation method based on sub-wavelength structure modulation terahertz emission |
| CN110441929A (en) * | 2019-08-14 | 2019-11-12 | 上海大学 | Based on tunable THz wave transmitter of magneto-electronics array and preparation method thereof |
| CN110690569A (en) * | 2019-09-10 | 2020-01-14 | 天津大学 | Terahertz photoconductive transmitting antenna with microstructure integrated on transmission line |
| CN112268617A (en) * | 2020-09-24 | 2021-01-26 | 西安理工大学 | Detection antenna array capable of simultaneously detecting terahertz wave polarization degree and time domain waveform |
Non-Patent Citations (2)
| Title |
|---|
| RUBÉN DARÍO VELÁSQUEZ RÍOS: "Terahertz-Wave Characterization of LTG-GaAs Thin-Film Photoconductive Antenna", 《 IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS》 * |
| 夏祖学: "微结构太赫兹波光电导天线的研究", 《中国博士学位论文全文数据库 信息科技辑》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113328232B (en) | 2022-05-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108417976B (en) | Gallium arsenide nano-pillar array terahertz wave transmitting device and manufacturing method thereof | |
| US11710801B2 (en) | Silicon carbide-based full-spectrum-responsive photodetector and method for producing same | |
| Mitrofanov et al. | Efficient photoconductive terahertz detector with all-dielectric optical metasurface | |
| CN110095888B (en) | Terahertz modulator based on silicon-based microstructure on SOI (silicon on insulator), system and method | |
| CN112798116B (en) | Intermediate infrared superconducting nanowire single photon detector | |
| Kordrostami et al. | High absorption enhancement of invert funnel and conical nanowire solar cells with forward scattering | |
| Enoch et al. | Design considerations for a new generation of SiPMs with unprecedented timing resolution | |
| Chen et al. | Sixteen-pixel NbN nanowire single photon detector coupled with 300-μm fiber | |
| CN106575098B (en) | Vortex beams production method, device and preparation method thereof | |
| CN113328232B (en) | Polarization-adjustable terahertz photoconductive antenna and preparation method thereof | |
| CN110164993A (en) | A kind of ultraviolet band multi-wavelength detector and preparation method thereof | |
| CN110429156B (en) | Si-APD photoelectric detector based on fractal nanowire surface structure and preparation method | |
| Wu et al. | Self-powered and broadband germanium/PEDOT: PSS heterojunction photodetectors for near-infrared biomedical imaging applications | |
| WO2020193857A1 (en) | Infrared absorption and detection enhancement using plasmonics | |
| CN105830224B (en) | Photovoltaic cell, particularly solar cell and the method for manufacturing photovoltaic cell | |
| CN110246914A (en) | A kind of enhanced terahertz detector of etching based on indium antimonide and preparation method | |
| CN214203981U (en) | All-dielectric super-surface terahertz photoconductive antenna based on embedded metal nano structure | |
| Suo et al. | Photon-trapping array for enhanced midwave infrared photoresponse | |
| CN112345092B (en) | Superconducting nanowire single photon detector | |
| CN108963028A (en) | A kind of optothermal detector and preparation method thereof improving detection accuracy | |
| Li et al. | Ultrahighly Enhanced Performance of Single Cadmium Selenide Nanobelt by Plasmonic Gold Particles | |
| Yu et al. | Photonic-crystals-based GAGG: Ce scintillator with high light output and fast decay time for soft x-ray detection | |
| CN109781265B (en) | Imaging detection chip of coupling optical antenna and preparation method thereof | |
| RU2699930C1 (en) | High-speed photodetector | |
| Chen et al. | A 16-pixel NbN nanowire single photon detector coupled with 300 micrometer fiber |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |