CN105923600A - Amplitude adjustable terahertz near field excitation type molecular sensor and production method thereof - Google Patents
Amplitude adjustable terahertz near field excitation type molecular sensor and production method thereof Download PDFInfo
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- CN105923600A CN105923600A CN201610387745.7A CN201610387745A CN105923600A CN 105923600 A CN105923600 A CN 105923600A CN 201610387745 A CN201610387745 A CN 201610387745A CN 105923600 A CN105923600 A CN 105923600A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 230000005284 excitation Effects 0.000 title abstract 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 45
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 14
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims abstract 17
- 238000001704 evaporation Methods 0.000 claims description 21
- 229920002120 photoresistant polymer Polymers 0.000 claims description 19
- 230000008020 evaporation Effects 0.000 claims description 17
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 13
- 239000010936 titanium Substances 0.000 claims description 13
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 12
- 239000003292 glue Substances 0.000 claims description 12
- 229910052719 titanium Inorganic materials 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 239000008367 deionised water Substances 0.000 claims description 7
- 229910021641 deionized water Inorganic materials 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 238000004528 spin coating Methods 0.000 claims description 6
- 238000004026 adhesive bonding Methods 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 5
- 239000013618 particulate matter Substances 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 4
- 238000012546 transfer Methods 0.000 claims description 4
- 229910000906 Bronze Inorganic materials 0.000 claims description 3
- 239000010974 bronze Substances 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 3
- 230000008595 infiltration Effects 0.000 claims description 3
- 238000001764 infiltration Methods 0.000 claims description 3
- 238000001465 metallisation Methods 0.000 claims description 3
- 238000007711 solidification Methods 0.000 claims description 3
- 230000008023 solidification Effects 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 238000002207 thermal evaporation Methods 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 8
- 230000003287 optical effect Effects 0.000 abstract description 3
- 230000000737 periodic effect Effects 0.000 abstract description 3
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- 238000005516 engineering process Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 3
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- 239000004065 semiconductor Substances 0.000 description 3
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- 229910007709 ZnTe Inorganic materials 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00206—Processes for functionalising a surface, e.g. provide the surface with specific mechanical, chemical or biological properties
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
- G01N21/3586—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation by Terahertz time domain spectroscopy [THz-TDS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/99—Microstructural systems or auxiliary parts thereof not provided for in B81B2207/01 - B81B2207/115
Abstract
The invention relates to an amplitude adjustable terahertz near field excitation type molecular sensor and a production method thereof. The molecular sensor is formed by arranging a terahertz photoconductive antenna and an electromagnetic resonant cell array at two sides of a semi-insulated gallium arsenide substrate. The terahertz photoconductive antenna is composed of two T-shaped electrodes which are distributed in mirror symmetry. The horizontal axis part of each T-shaped electrode is an outer electrode. The vertical axis part is an inner electrode. The head ends of the inner electrodes are engaged with the outer electrodes. The electromagnetic resonant cell array is a periodic cross electromagnetic resonant cell array. According to the sensor and the method, the distances between the terahertz photoconductive antenna and the periodic metal resonant cells are reduced to a 3THz wavelength range; the local oscillation strength of dipoles is improved through near field enhancement; the strength of a terahertz electromagnetic resonant mode is improved; the quality factor of the resonant mode is improved; the sensitivity and spatial resolution of THz molecular detection can be improved; and the optical element layout of the whole spectrum detection system is simplified.
Description
Technical field
The present invention relates to Terahertz Technology and semiconductor microactuator processing technique field, be specifically related to a kind of for
Biomedical and the amplitude adjustable Terahertz near field excitated type molecule sensor of chemical detection and manufacture thereof
Method.
Background technology
Terahertz (THz) wave band refers to that frequency is 1012Hz, corresponding wavelength is 300 μm, to should be able to
Level be 0.41-41meV) in the range of electromagnetic wave.The energy of this wave band just with biomacromolecule
The energy level of vibration level, the rotational level of dipole and vibrational transition matches, so that Terahertz
(THz) technology shows huge application potential at aspects such as biomedical research, chemicals inspections.
At present, it is used for studying biochemical molecule and mainly uses standard terahertz time-domain spectroscopy system
(THz-TDS), by a pair off axis paraboloidal mirror (Off-axis parabolic mirror) by microwatt
The THz ripple of magnitude focuses on sample surfaces, then again with a pair off axis paraboloidal mirror by transmission
THz ripple focuses on THz reception antenna or electro optic sampling crystal, thus obtains biochemical molecule
Characteristic signal.General off axis paraboloidal mirror focal length is much larger than Terahertz wavelength, according to EM theory,
The THz transmission obtained obtains under far field condition, there is a far field THz in principle
Diffraction limit, smallest focal spot is less than THz half-wavelength (λ/2), in inspection microchemistry product or life
During thing molecule, THz focal spot must cover whole sample surfaces, and when sample size is small, THz visits
The sensitivity surveyed can be affected.Additionally, the flaw of THz optical element, aberration, and optics unit
The error that the quasi-value of part causes, have impact on the efficiency that incident THz ripple couples with sample further, thus limits
Make the spatial resolution of THz spectrum.How under the conditions of low energy consumption, low cost, to complicated,
The biochemical molecule that content is small implements quick high accuracy detection, becomes THz technology and is applied to raw
The subject matter that field is faced is tested in thing medical research, microchemistry product examine.
At present, periodicity artificial micro-structure array based on sub-wavelength dimensions, it is considered to solve above-mentioned asking
One of major programme of topic.If adding trace biological or chemical molecular sample to sub-wavelength dimensions
Periodically in artificial micro-structure resonant element, the dielectric environment of metal and interface will be changed,
Affect the propagation characteristic of class surface plasma (Spoof surface plasmon), thus change transmission
The position at peak, identifies rapidly the kind of molecule.But, when THz ripple excites intensive multiple periodicity
Time in artificial micro-structure resonant element, scattering effect causes electromagentic resonance peak broadening, THz coupling efficiency
Reduce, thus cause the decline of the device quality factor (Q factor), limit the sensitive of THz sensing
Degree and spatial resolution.
Summary of the invention
The present invention aims at current Terahertz Technology and needs in biomedical and chemicals detection field application
Ask, it is provided that a kind of amplitude adjustable Terahertz near field excitated type molecule sensor and manufacture method thereof.
The first object of the present invention is to provide a kind of amplitude adjustable Terahertz near field excitated type molecule to pass
Sensor, by semi-insulating GaAs (SI-GaAs) substrate be respectively provided on two sides with Terahertz photoconductive antenna and
EMR electromagnetic resonance cell array is constituted, and the thickness of described semi-insulating GaAs (SI-GaAs) substrate is 625
μm, size 1cm × 1cm；Described Terahertz photoconductive antenna is specular by two T-shaped electrodes
Distribution is constituted；The transverse axis part of each T-shaped electrode is external electrode, and longitudinal axis part is interior electrode, described
The head end of interior electrode is connected with external electrode；At two interior electrode ends, spacing is 50 μm；Described electromagnetism is humorous
Cell array of shaking is periodically cross EMR electromagnetic resonance cell array, described cross EMR electromagnetic resonance unit
Having centrosymmetric structure, array period is 66.66 μm；Described Terahertz photoconductive antenna and cycle
Property cross EMR electromagnetic resonance cell array by the thick gold layer structure of titanium coating thick for 5nm and 120nm
Become.
Further, the long 10mm of external electrode of described T-shaped electrode, wide 2mm；Described T-shaped electrode
A length of 2.975mm (wherein rectangle part length 2mm, the gable base of interior electrode
A length of 0.975mm to chamfering), the end of described interior electrode is isosceles right triangle and directly
The chamfering of 25 √ 2*45 ° it is provided with at angle.
Further, center vertical angles angle 90 ° at electrode end in said two T-shaped electrode.
Further, each cross EMR electromagnetic resonance unit is formed at the rectangle of 66.66 μ m 66.66 μm
On region, the transverse axis of each cross EMR electromagnetic resonance unit is equal with longitudinal axis dimension, be long 24 μm,
Distance bottom wide 4 μm, transverse axis lower edge and the longitudinal axis is 10 μm, and longitudinal axis top is to transverse axis upper edge
Distance is 10 μm, and the longitudinal axis passes from the middle of transverse axis, the centrage of the longitudinal axis with
The centrage of 66.66 μ m 66.66 μm rectangular areas overlaps.
Further, the region area that described Terahertz photoconductive antenna is covered is 10mm × 10mm
Rectangular area, identical with the region area that described EMR electromagnetic resonance cell array is covered；Wherein, institute
State region area that EMR electromagnetic resonance cell array covered and include multiple being disposed adjacent
The rectangular area of 66.66 μ m 66.66 μm, shape on the rectangular area of each 66.66 μ m 66.66 μm
Cheng Youyi cross EMR electromagnetic resonance unit.
The second object of the present invention is to provide the manufacture of above-mentioned Terahertz near field excitated type molecule sensor
Method, comprises the steps:
The first step: semi-insulating GaAs (SI-GaAs) substrate is placed in deionized water, and ultrasonic ring
Border is cleaned, removes remained on surface particulate matter, then surface is dried up；
Second step: photoresist is dropped in semi-insulating GaAs (SI-GaAs) substrate surface, and carries out even
Glue, whirl coating operate so that thick < 1.5 μm of glue；
3rd step: operate semi-insulating GaAs (SI-GaAs) substrate after gluing, solidifies light
Photoresist；
4th step: photomask board cross array pattern is transferred to semi-insulating GaAs (SI-GaAs)
On substrate, and develop, clean；
5th step: plate 5nm successively on semi-insulating GaAs (SI-GaAs) substrate after the drying
Thick titanium and the gold of 120nm thickness；First evaporation cross array metal layer, re-evaporation photoconductive antenna gold
Belong to layer；The metal level of first evaporation periods cross EMR electromagnetic resonance cell array, re-evaporation terahertz light
The metal level of conductance antenna；
6th step: the semi-insulating GaAs (SI-GaAs) after metallization is immersed in preprepared
In 99.999% purity acetone solvent, utilize the photoresist after acetone infiltration solidification, by the metal in glue surface
Peel off SI-GaAs surface, and the metal not having photoresist to protect is partially left on SI-GaAs, thus
Obtain Terahertz near field excitated type molecule sensor.
Further, in the first step, semi-insulating GaAs (SI-GaAs) substrate is placed in deionization
In water, and clean in the ultrasound environments of 10kHz frequency, remove remained on surface particulate matter, then use
Surface is dried up by high pressure nitrogen.
Further, in second step, dried semi-insulating GaAs (SI-GaAs) substrate is put
On spin coating platform, under the conditions of gold-tinted, AZ1500 type photoresist is dropped in semi-insulating GaAs
(SI-GaAs) substrate surface, and carry out spin coating with the slow-speed of revolution of 600r/min immediately, after maintaining 10s,
Rotating speed directly brings up to the high rotating speed of 3000r/min and carries out whirl coating, maintains 60s so that thick < 1.5 μm of glue.
Further, in the third step, semi-insulating GaAs (SI-GaAs) substrate after gluing is put
It is placed in the baking carrying out 60s on the drying glue platform of 110 DEG C, solidifies photoresist.
Further, in the 4th step, the semi-insulating GaAs (SI-GaAs) scribbling photoresist is served as a contrast
The end, is transferred on URE-2000/35 type ultraviolet photolithographic machine, after sample surfaces exposure 60s, is covered by light
Film version cross array pattern is transferred on semi-insulating GaAs (SI-GaAs) substrate, then in development
Develop in liquid 45s, and transfers to clean in deionized water mortise 60s, uses compressed nitrogen air-blowing after taking-up immediately
Dry semi-insulating GaAs (SI-GaAs) substrate surface.
Further, the 5th step: dried semi-insulating GaAs (SI-GaAs) substrate is placed in heat
On evaporation coating instrument sample holder, the most respectively by fill titanium powder that purity is 99.999% and
The tungsten boat at the bronze end of 99.999% is connected in two groups of different electrodes, starts true after closing evaporation chamber
Empty pump, is reduced to 10 from normal atmosphere by force by chamber inner pressure-4Mbar, is then turned on connecting titanium
Power supply, and improve current intensity, until film thickness detector display thickness increases to 5nm, with
The evaporation rate of 0.1nm/s, continues 200s rear cutout disconnection and leads to the power supply of titanium, and connect containing Jin Wuzhou
Power supply, and improve current intensity, until film thickness detector display thickness increases to 120nm,
With the evaporation rate of 0.5nm/s, cut off the electricity supply after continuing 500s, after cooling 600s, close vacuum step by step
Pump, waits chamber inner pressure to open evaporation cavity after returning by force normal atmosphere, takes out sample.
The present invention compared with prior art, has the following advantages and highlights effect:
The Terahertz near field excitated type molecule sensor that the present invention proposes is a kind of brand-new hybrid device.
By using standard semiconductor micro fabrication, by by humorous to terahertz light lead antenna and periodic electromagnetism
The discrete device that two functions of cell array of shaking are different is integrated in same semi-insulating GaAs (SI-GaAs)
On substrate, as same piece of positive and negative prints the coin of different pattern, by by terahertz light lead antenna with
Periodically the Distance Shortened of metal resonant element is in the range of 3THz wavelength, utilizes near field to strengthen and carries
The high local strength of dipole vibration, strengthens the intensity of Terahertz EMR electromagnetic resonance pattern, carries further
The quality factor of high mode of resonance, thus improve sensitivity and the spatial resolution of THz Molecular Detection,
Simplify the optical element layout of whole detection spectroscopic system simultaneously.
Utilizing existing semiconductor microactuator processing technique, preparation technology is simple and convenient to operate, can be accurate
Control complementary type split ring resonator micro structure machining area, greatly reduce cost.
Use gold/Ti electrode composition simple, it is not necessary to annealing both can obtain good ohmic contact, the device of raising
The reliability of part and integration.
Accompanying drawing explanation
Fig. 1 be the present invention Terahertz near field excitated type molecule sensor in be positioned at the photoelectricity in SI-GaAs front
The surface texture figure of lead antenna；
Fig. 2 is the partial enlarged drawing in Fig. 1 at A；
Fig. 3 be the present invention Terahertz near field excitated type molecule sensor in be positioned at of the SI-GaAs back side
Cross-type resonance structure top view；Wherein, black part is divided into metal cross, and blank parts is
SI-GaAs substrate；A is overall diagram, and b is the partial enlarged drawing in a figure at B；
Fig. 4 is the cross sectional representation of the Terahertz near field excitated type molecule sensor of the present invention；
Fig. 5 is the transmission spectrum figure of the Terahertz near field excitated type molecule sensor of the present invention；
Fig. 6 is that the max transmissive intensity of the Terahertz near field excitated type molecule sensor of the present invention is with bias voltage
The graph of a relation of 80V is changed to from 5V.
Detailed description of the invention
It is that doing of how realizing is the most detailed, clear, complete to the present invention below in conjunction with specific embodiment
Illustrate wholely.
As Figure 1-4, a kind of amplitude adjustable Terahertz near field excitated type molecule sensing of the present invention
Device, is respectively provided on two sides with Terahertz photoconductive antenna and electricity by semi-insulating GaAs (SI-GaAs) substrate
Magnetic resonance cell array is constituted, and the thickness of semi-insulating GaAs (SI-GaAs) substrate is 625 μm, chi
Very little 1cm × 1cm；Terahertz photoconductive antenna is that specular distribution is constituted by two T-shaped electrodes；Often
The transverse axis part of individual T-shaped electrode is external electrode, and longitudinal axis part is interior electrode, and the head end of interior electrode is with outer
Electrode is connected；At two interior electrode ends, spacing is 50 μm；EMR electromagnetic resonance cell array is periodically ten
Cabinet frame EMR electromagnetic resonance cell array, cross EMR electromagnetic resonance unit has centrosymmetric structure, array week
Phase is 66.66 μm；Terahertz photoconductive antenna and periodically cross EMR electromagnetic resonance cell array are by 5
Titanium coating and the gold layer of 120nm thickness that nm is thick are constituted.
Wherein, the long 10mm of the external electrode of T-shaped electrode, wide 2mm；The interior electricity of described T-shaped electrode
(wherein rectangle part length 2mm, gable base is to chamfering for a length of 2.975mm of pole
A length of 0.975mm), the end of described interior electrode is isosceles right triangle and sets in right angle
There is the chamfering of 25 √ 2*45 °.Center vertical angles angle 90 ° at electrode end in two T-shaped electrodes.
Each cross EMR electromagnetic resonance unit is formed on the rectangular area of 66.66 μ m 66.66 μm, often
The transverse axis of individual cross EMR electromagnetic resonance unit is equal with longitudinal axis dimension, is long 24 μm, wide 4 μm, horizontal
Distance bottom axle lower edge and the longitudinal axis is 10 μm, and the distance at longitudinal axis top to transverse axis upper edge is 10
μm, the longitudinal axis passes from the middle of transverse axis, the centrage of the longitudinal axis and 66.66 μ m 66.66 μm rectangle regions
The centrage in territory overlaps.
The region area that Terahertz photoconductive antenna is covered is the rectangular area of 10mm × 10mm,
Identical with the region area that EMR electromagnetic resonance cell array is covered；Wherein, EMR electromagnetic resonance cell array institute
The region area covered includes the rectangular area of multiple 66.66 μ m 66.66 μm being disposed adjacent, each
A cross EMR electromagnetic resonance unit it is formed with on the rectangular area of 66.66 μ m 66.66 μm.
The manufacture method of the above-mentioned Terahertz near field excitated type molecule sensor of the present invention is as follows:
The first step: semi-insulating GaAs (SI-GaAs) substrate is placed in deionized water, and at 10kHz
The ultrasound environments of frequency is cleaned, removes remained on surface particulate matter, then with high pressure nitrogen, surface is blown
Dry.
Second step: dried semi-insulating GaAs (SI-GaAs) substrate is placed on spin coating platform,
Under the conditions of gold-tinted, AZ1500 type photoresist is dropped in semi-insulating GaAs (SI-GaAs) substrate surface,
And carry out spin coating with the slow-speed of revolution of 600r/min immediately, after maintaining 10s, rotating speed directly brings up to
The high rotating speed of 3000r/min carries out whirl coating, maintains 60s so that thick < 1.5 μm of glue.
3rd step: semi-insulating GaAs (SI-GaAs) substrate after gluing is placed on the baking of 110 DEG C
Carry out the baking of 60s on Jiao Tai, solidify photoresist.
4th step: semi-insulating GaAs (SI-GaAs) substrate scribbling photoresist is transferred to
On URE-2000/35 type ultraviolet photolithographic machine, after sample surfaces exposure 60s, by photomask board cross
Frame array pattern is transferred on semi-insulating GaAs (SI-GaAs) substrate, then develops in developer solution
45s, and transfer to deionized water mortise cleans 60s, dry up semi-insulating after taking-up immediately with compressed nitrogen
GaAs (SI-GaAs) substrate surface.
5th step: dried semi-insulating GaAs (SI-GaAs) substrate is placed in thermal evaporation plated film instrument
On sample holder, titanium powder and the bronze of 99.999% that purity is 99.999% will be filled the most respectively
The tungsten boat at end is connected in two groups of different electrodes, starts vacuum pump, by chamber after closing evaporation chamber
Interior pressure is reduced to 10 from normal atmosphere-4Mbar, is then turned on connecting the power supply of titanium, and carries
High current intensity, until film thickness detector display thickness increases to 5nm, with the steaming of 0.1nm/s
The rate of sending out, continues 200s rear cutout disconnection and leads to the power supply of titanium, and connect the power supply containing Jin Wuzhou, and carry
High current intensity, until film thickness detector display thickness increases to 120nm, with 0.5nm/s's
Evaporation rate, cuts off the electricity supply after continuing 500s, closes vacuum pump step by step, in waiting chamber after cooling 600s
Pressure opens evaporation cavity after returning normal atmosphere, take out sample.First evaporation cross array metal layer,
Re-evaporation photoconductive antenna metal level, the metal of first evaporation periods cross EMR electromagnetic resonance cell array
Layer, the metal level of re-evaporation Terahertz photoconductive antenna.
6th step: the semi-insulating GaAs (SI-GaAs) after metallization is immersed in preprepared
In 99.999% purity acetone solvent, utilize the photoresist after acetone infiltration solidification, by the metal in glue surface
Peel off SI-GaAs surface, and the metal not having photoresist to protect is partially left on SI-GaAs, thus
Obtain Terahertz near field excitated type molecule sensor.
Wherein, Terahertz photoconductive antenna and the metal level of periodicity cross EMR electromagnetic resonance cell array
In, 5nm thickness titanium does tack coat, and 120nm thickness gold can form Ohmic contact with SI-GaAs.
This metal layer thickness is more than the skin depth of THz electromagnetic wave, it is not necessary to make annealing treatment after evaporation.
The characteristic of product prepared by the present invention, as shown in Figure 5 and Figure 6, is to be carried out by following equipment
Obtain after performance characterization.When this equipment uses Chinese Academy of Sciences Zhao Hong to defend seminar's self-built Terahertz
Territory spectroscopic system is (at journal article Chemical Physics Letters 392 (2004) 348 and Journal
Of Biological Physics, is described in 32 (2006) 403) measure the present invention THz transmission spectrum.
This system includes: Spectra-Physics Mai Tai SP type high-energy ultra-short pulse laser, 2 pairs of diameters
100mm, the gold-plated off axis paraboloidal mirror of focal length 100mm are used for focusing on the Terahertz spoke in free space
Penetrate, by by the ZnTe crystal in<110>crystal orientation thick for one piece of 2mm, quarter wave plate, Wollastom
The Electro Optic Sampling System of prism composition symbolizes the terahertz sources impulse waveform of device.
Use the performance of the wave filter for the detection of Nitrogen ion Terahertz characteristic spectral line of above-mentioned resonant element
Embody in fig. 5 and fig.: its transmissison characteristic is in the test frequency range of 0.1THz～3.0THz
Carry out, find that its center resonant frequency is positioned at 0.71THz.Fig. 5 (data are the transmitances after normalization)
In data show, this device is the half-breadth overall height value (Full of its transmittance curve at 0.71THz
Maximum Half Width:FMHW) be compressed to 0.01THz THz, corresponding resonance quality because of
Son reaches 71.
The above is presently preferred embodiments of the present invention, but the present invention should not be limited to this enforcement
Example disclosure of that.So it is every without departing from the equivalence completed under principles of this disclosure or repair
Change, both fall within the scope of protection of the invention.
Claims (10)
1. an amplitude adjustable Terahertz near field excitated type molecule sensor, by semi-insulating GaAs
(SI-GaAs) substrate is respectively provided on two sides with Terahertz photoconductive antenna and EMR electromagnetic resonance cell array structure
Become, it is characterised in that:
The thickness of described semi-insulating GaAs (SI-GaAs) substrate is 625 μm, size 1cm × 1cm；
Described Terahertz photoconductive antenna is that specular distribution is constituted by two T-shaped electrodes；Each T
The transverse axis part of shape electrode is external electrode, and longitudinal axis part is interior electrode, and the head end of described interior electrode is with outer
Electrode is connected；At two interior electrode ends, spacing is 50 μm；
Described EMR electromagnetic resonance cell array is periodicity cross EMR electromagnetic resonance cell array, described cross
Frame EMR electromagnetic resonance unit has centrosymmetric structure, and array period is 66.66 μm；
Described Terahertz photoconductive antenna and periodically cross EMR electromagnetic resonance cell array are thick by 5nm
Titanium coating and the thick gold layer of 120nm constitute.
Amplitude the most according to claim 1 adjustable Terahertz near field excitated type molecule sensor,
It is characterized in that: the long 10mm of external electrode of described T-shaped electrode, wide 2mm；Described T-shaped electrode
The a length of 2.975mm of interior electrode, the end of described interior electrode is isosceles right triangle and at right angle
Place is provided with the chamfering of 25 √ 2*45 °.
Amplitude the most according to claim 1 adjustable Terahertz near field excitated type molecule sensor,
It is characterized in that: each cross EMR electromagnetic resonance unit is formed at the rectangle region of 66.66 μ m 66.66 μm
On territory, the transverse axis of each cross EMR electromagnetic resonance unit is equal with longitudinal axis dimension, is long 24 μm, width
4 μm, the distance bottom transverse axis lower edge and the longitudinal axis is 10 μm, longitudinal axis top to transverse axis upper edge away from
From for 10 μm, the longitudinal axis passes from the middle of transverse axis, the centrage of the longitudinal axis and 66.66 μ m 66.66 μm
The centrage of rectangular area overlaps.
4. according to the amplitude adjustable Terahertz near field excitated type molecule described in any one of claim 1-3
Sensor, it is characterised in that: the region area that described Terahertz photoconductive antenna is covered is 10mm
The rectangular area of × 10mm, identical with the region area that described EMR electromagnetic resonance cell array is covered,
Wherein, described EMR electromagnetic resonance cell array is covered region area includes multiple being disposed adjacent
The rectangular area of 66.66 μ m 66.66 μm, shape on the rectangular area of each 66.66 μ m 66.66 μm
Cheng Youyi cross EMR electromagnetic resonance unit.
5. according to the system of the Terahertz near field excitated type molecule sensor described in any one of claim 1-4
Make method, it is characterised in that comprise the steps:
The first step: semi-insulating GaAs (SI-GaAs) substrate is placed in deionized water, and ultrasonic ring
Border is cleaned, removes remained on surface particulate matter, then surface is dried up；
Second step: photoresist is dropped in semi-insulating GaAs (SI-GaAs) substrate surface, and carries out even
Glue, whirl coating operate so that thick < 1.5 μm of glue；
3rd step: operate semi-insulating GaAs (SI-GaAs) substrate after gluing, solidifies light
Photoresist；
4th step: photomask board cross array pattern is transferred to semi-insulating GaAs (SI-GaAs)
On substrate, and develop, clean；
5th step: plate 5nm successively on semi-insulating GaAs (SI-GaAs) substrate after the drying
Thick titanium and the gold of 120nm thickness；
6th step: the semi-insulating GaAs (SI-GaAs) after metallization is immersed in preprepared
In 99.999% purity acetone solvent, utilize the photoresist after acetone infiltration solidification, by the metal in glue surface
Peel off SI-GaAs surface, and the metal not having photoresist to protect is partially left on SI-GaAs, thus
Obtain Terahertz near field excitated type molecule sensor.
Manufacture method the most according to claim 5, it is characterised in that: in the first step, will be partly
Insulating gallium arsenide (SI-GaAs) substrate is placed in deionized water, and at the ultrasonic ring of 10kHz frequency
Border is cleaned, removes remained on surface particulate matter, then with high pressure nitrogen, surface is dried up.
Manufacture method the most according to claim 5, it is characterised in that: in second step, will be dry
Semi-insulating GaAs (SI-GaAs) substrate after dry is placed on spin coating platform, will under the conditions of gold-tinted
AZ1500 type photoresist drops in semi-insulating GaAs (SI-GaAs) substrate surface, and immediately with 600r/min
The slow-speed of revolution carry out spin coating, after maintaining 10s, rotating speed directly brings up to the high rotating speed of 3000r/min to be carried out
Whirl coating, maintains 60s so that thick < 1.5 μm of glue.
Manufacture method the most according to claim 5, it is characterised in that: in the third step, gluing
After semi-insulating GaAs (SI-GaAs) substrate be placed on the drying glue platform of 110 DEG C and carry out 60s's
Bakee, solidify photoresist.
Manufacture method the most according to claim 5, it is characterised in that: in the 4th step, will be coated with
Semi-insulating GaAs (SI-GaAs) substrate having photoresist transfers to URE-2000/35 type ultraviolet photolithographic
On machine, after sample surfaces exposure 60s, photomask board cross array pattern is transferred to semi-insulating
On GaAs (SI-GaAs) substrate, then develop in developer solution 45s, and transfers to deionized water
Mortise cleans 60s, after taking-up, dries up semi-insulating GaAs (SI-GaAs) substrate with compressed nitrogen immediately
Surface.
Manufacture method the most according to claim 5, it is characterised in that: the 5th step: will be dried
After semi-insulating GaAs (SI-GaAs) substrate be placed on thermal evaporation plated film instrument sample holder, then divide
The tungsten boat filling the bronze end of titanium powder that purity is 99.999% and 99.999% is not connected to two groups
In different electrodes, after closing evaporation chamber, start vacuum pump, by chamber inner pressure by force from normal atmosphere
It is reduced to 10-4Mbar, is then turned on connecting the power supply of titanium, and improves current intensity, until film
Till thick detector display thickness increases to 5nm, with the evaporation rate of 0.1nm/s, after continuing 200s
Cut off the power supply of connection titanium, and connect the power supply containing Jin Wuzhou, and improve current intensity, until
Till film thickness detector display thickness increases to 120nm, with the evaporation rate of 0.5nm/s, continue 500s
After cut off the electricity supply, cooling 600s after close vacuum pump step by step, wait chamber inner pressure to return by force normal atmosphere
After open evaporation cavity, take out sample.
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| CN109728428A (en) * | 2018-12-29 | 2019-05-07 | 中国科学院半导体研究所 | Photoconductive antenna and preparation method based on sub-wavelength structure modulation terahertz emission |
| CN113328232A (en) * | 2021-06-01 | 2021-08-31 | 重庆邮电大学 | Polarization-adjustable terahertz photoconductive antenna and preparation method thereof |
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