CN113328225A - Broadband cross device based on mixed lumped distribution parameter network - Google Patents
Broadband cross device based on mixed lumped distribution parameter network Download PDFInfo
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- CN113328225A CN113328225A CN202110505328.9A CN202110505328A CN113328225A CN 113328225 A CN113328225 A CN 113328225A CN 202110505328 A CN202110505328 A CN 202110505328A CN 113328225 A CN113328225 A CN 113328225A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
- H01P3/08—Microstrips; Strip lines
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Abstract
The invention discloses a broadband cross device based on a mixed lumped distribution parameter network, and belongs to the technical field of wireless mobile communication. The invention comprises a metal grounding plate, a dielectric substrate and a dielectric substrate upper circuit which are arranged from bottom to top in sequence; the upper layer circuit of the dielectric substrate comprises a window type topological structure, ports, feeder lines and a lumped resonant unit. In the invention, the isolation between the adjacent ports is realized by controlling the parameters of the high-impedance microstrip and the low-impedance microstrip of the window-type topological structure. The lumped resonance unit is introduced and is formed by connecting a capacitor structure and an inductor structure in parallel; due to the existence of the lumped resonance unit, the additional matching zero point and the isolation zero point are equivalently introduced on the transmission characteristic curve, so that the return loss and the isolation bandwidth of the lifting interleaver can be improved. The window-type topological transmission line is bent in a protruding mode, so that the physical size of the cross device is reduced, and the structure is more compact.
Description
Technical Field
The invention relates to the technical field of wireless mobile communication, in particular to a broadband cross device based on a mixed lumped distribution parameter network.
Background
Since the layout and wiring between high-frequency electronic circuits are easily affected by crosstalk, coupling, and aliasing between adjacent signals, conventional multilayer crossers are widely used to achieve electrical independence of physically connected multiple signals. The multilayer interleaver realizes transmission of desired signals and suppression of crosstalk by physically separating transmission lines from a third dimension. Due to the complex transmission mode and expensive manufacturing process of the multilayer interleaver structure, the problems of high loss, high cost and the like exist, and the application range is seriously influenced. Therefore, researchers have begun to seek a planar level interleaver design.
At present, the planar interleaver structure is more applied to the beamforming network and the multi-beam system based on the butler matrix, and as one of the structural units of the basic composition, the distributed circuit structure based on the transmission line is mostly adopted, and the circuit topology size is large. In practical applications, the relative bandwidth achievable by conventional planar distributed interleavers is on the order of 10% -20%, subject to the structure itself and the degree to which the transmission characteristics are sensitive to frequency response. In order to expand the relative bandwidth of the conventional planar distributed interleaver, a planar distributed interleaver of a patch-ring structure is reported in the literature, in which the overall bandwidth is made to be about 40% by the patch disposed on the dielectric substrate. Because the structure is designed to obtain better bandwidth, certain sacrifice is made on the structure size and loss, so that the whole structure is large and the radiation loss is serious, and the efficiency of the structure is limited and the device integration is not facilitated.
Accordingly, the prior art has proposed a window-type cross device, which is composed of an external high-impedance transmission line and an internal low-impedance transmission line, and the external high-impedance transmission line and the internal low-impedance transmission line are combined into a "tian" shape, thereby improving the circuit layout, making the size smaller, and facilitating the integration. Because the structure is only used as a symmetrical topology of a signal cross path in the design process and does not optimize or compensate the frequency sensitivity of the distributed transmission line, only one isolation zero and one reflection zero exist in the amplitude response, and thus, only the working bandwidth of the matching bandwidth and the isolation bandwidth which are about 10 percent near the central frequency are formed. However, matching bandwidths and isolation bandwidths of around 10% are not suitable for broadband system-level applications.
Disclosure of Invention
For the reasons, the invention provides a broadband interleaver based on a mixed lumped distribution parameter network, which solves the problem that a window-type structure interleaver is difficult to be broadband.
The technical scheme adopted for solving the technical problems is as follows:
a broadband cross device based on a mixed lumped distribution parameter network sequentially comprises a metal grounding plate, a dielectric substrate and a dielectric substrate upper-layer circuit from bottom to top;
a metalized through hole is formed in the dielectric substrate; the upper-layer circuit of the dielectric substrate comprises a window-type topological structure, ports, a feeder line and a lumped resonant unit;
the window type topological structure is used for realizing the cross passing of signals and consists of a high-impedance microstrip line with the resistance larger than 50 ohms and a low-impedance microstrip line with the resistance smaller than 50 ohms; the ports are arranged on the medium substrate, at least 2 groups of ports are arranged, each group of ports comprises an input port and an output port, the input port and the output port are respectively connected with the window type topological structure through a feeder line to form a signal path, and the central points of all the signal paths are crossed; the signal input by the input port is transmitted to the low-impedance microstrip line through the high-impedance microstrip line and then transmitted to the output end through the low-impedance microstrip line after passing through the central point;
the feeder lines are connected with lumped resonance units, and each lumped resonance unit is formed by connecting a capacitor structure and an inductor structure in parallel; the output ends of the capacitor structure and the inductor structure are connected with the metalized through holes so as to realize the parallel grounding of the lumped resonance unit.
Furthermore, the lumped resonant unit further comprises a bonding pad, wherein the bonding pad covers the metalized through hole, and the output end of the capacitor structure and the output end of the inductor structure are connected to the bonding pad.
Further, the center frequency of the lumped resonant cell with which the resonant response extends the bandwidth is set to the center frequency of the operation of the interleaver.
Furthermore, the high-impedance microstrip line in the window-type topological structure forms a square structure, and 4 convex bending parts are arranged on each side of the square at equal distance; the low-impedance microstrip line is arranged in the square to form a cross-shaped structure, the central positions of four sides of the cross are respectively provided with 1 raised bending part along the clockwise direction of the cross, and the upper end, the lower end, the left end and the right end of the cross-shaped structure are respectively intersected with the middle points of four sides of the square; and 4 vertexes of the square are respectively provided with a feeder line, the end part of the other end of the feeder line is provided with a port, and the 4 ports are formed by using two diagonal ports as a group.
Furthermore, 8 sections of high-impedance lines with the same size are adopted in the square structure, derivation is carried out according to the odd-even mode analysis theory, and the line width of each section of high-impedance line is 0.25-0.55 mm and the line length is 16-21.0 mm through the response of the network parameter comprehensive interleaver; the cross-shaped structure adopts 4 sections of low-impedance lines with the same size, and the line width and the line length of each section of low-impedance line are respectively 0.7-0.9 mm and 18-20.5 mm according to the same theoretical calculation.
Furthermore, the relative dielectric constant of the dielectric substrate is 3.43-3.53, the thickness is 0.508mm, and the size is 50mm multiplied by 50 mm.
The broadband cross device based on the mixed lumped distribution parameter network realizes the broadband design of the planar cross device by adopting a mixed distribution lumped form circuit topological structure. In the invention, the parameters of the high-impedance microstrip and the low-impedance microstrip line of the window-type topological structure are derived according to the odd-even mode analysis theory, and the isolation between the adjacent ports is realized by controlling the parameters of the high-impedance microstrip and the low-impedance microstrip line of the window-type topological structure. The lumped resonance unit is introduced and is formed by connecting a capacitor structure and an inductor structure in parallel; due to the existence of the lumped resonance unit, the additional matching zero point and the isolation zero point are equivalently introduced on the transmission characteristic curve, so that the return loss and the isolation bandwidth of the lifting interleaver can be improved. The window-type topological transmission line is bent in a protruding mode, so that the physical size of the cross device is reduced, and the structure is more compact.
Compared with the prior art, the invention has compact structure, smaller insertion loss and wider matching bandwidth.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a graph of the amplitude of the S parameter of the output signal at ports 1, 2, 3, 4 versus frequency when the signal is input at port 1;
FIG. 3 is a graph of the phase of the output signal at transmission port 3 as a function of frequency when the signal is input at port 1;
in the figure, 1-dielectric substrate, 2-dielectric substrate upper layer circuit, 3-metal grounding plate, 4-7-metal via hole, 8-11-metal pad, 12-window type topological structure, 13, 15, 17, 19-inductance structure, 14, 16, 18, 20-capacitance structure.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the following embodiments and accompanying drawings.
Referring to fig. 1, the broadband interleaver based on the hybrid lumped distribution parameter network, provided by the present invention, has a square overall structure, and sequentially includes a metal ground plate 3, a dielectric substrate 1, and a dielectric substrate upper circuit 2 from bottom to top. The dielectric substrate 1 is provided with a metallized via hole. The dielectric substrate upper layer circuit 2 comprises a window type topological structure 12, a metalized through hole, a port, a feeder line and a lumped resonant unit.
The window type topological structure 12 is used for realizing the cross passing of signals and is composed of a high-impedance microstrip line with the resistance larger than 50 ohms and a low-impedance microstrip line with the resistance smaller than 50 ohms, the high-impedance line and the low-impedance line form a window type topology in a shape of a Chinese character 'tian', specifically, the high-impedance microstrip line forms an external square structure, and each side of the square is provided with 4 convex bending parts at equal distances; the low-impedance microstrip line is arranged in the square to form a cross structure, the center positions of four sides of the cross are respectively provided with 1 bent part in a rising shape along the clockwise direction, and the upper end, the lower end, the left end, the right end and the end of the cross are respectively and vertically intersected with the middle points of four sides of the square. During implementation, due to the protruding bent part of the microstrip line in the window type topology, the physical size of the cross device can be effectively reduced, and the whole structure is more compact.
The ports are arranged on the dielectric substrate 1, and 2 groups are provided. The ports 1 and 3 are in one group, the ports 2 and 4 are in one group, each group of ports includes an input port and an output port, and the input port and the output port are respectively connected with the high-impedance microstrip line of the window-type topological structure 12 through a feeder line. When in use, one path of high-frequency signal is input from the port 1, transmitted to the low-impedance microstrip line through the high-impedance microstrip line, transmitted to the port 3 through the central point (the central point of the cross shape), and then output. The other path of signal is input from the port 2, transmitted to the low-impedance microstrip line through the high-impedance microstrip line, transmitted to the central point (the cross-shaped central point) through the low-impedance microstrip line, and then transmitted to the port 4 through the low-impedance microstrip line for output.
In the invention, as the two microstrip line sizes of high and low impedance affect the isolation between adjacent ports, in order to realize that two paths of high-frequency signals linearly pass through the ports corresponding to the structural diagonals, the adjacent ports are isolated, the derivation is carried out according to the odd-even mode analysis theory, and the impedance and the electrical size (window type topological network parameters) are integrated by utilizing the transmission characteristic of an ideal lossless cross-junction circuit, so that the line width of each section of high impedance line is 0.25-0.55 mm and the line length is 16-21.0 mm when the cross device responds can be obtained; the cross-shaped structure adopts 4 sections of low-impedance lines with the same size, and the line width and the line length of each section of low-impedance line are respectively 0.7-0.9 mm and 18-20.5 mm according to the same theoretical calculation.
The feeder lines are connected with 1 lumped resonance unit, and each lumped resonance unit comprises a capacitor structure, an inductor structure and a bonding pad; the capacitor structure and the inductor structure are arranged in parallel; the output ends of the capacitor structure and the inductor structure are respectively metallized with through holes so as to realize the parallel grounding of the lumped resonance unit. In order to simplify the manufacturing process and improve the convenience of operation, a pad is added in the embodiment, the pad covers the metalized via hole, and the pad is connected with the metal grounding plate through the metalized via hole so as to realize the parallel grounding of the lumped resonant unit.
Example 1
Now, the description will be made with reference to the following embodiments, in the following embodiments, the dielectric substrate 1 is square, and has dimensions of 50mm × 50mm, a relative dielectric constant of 3.66, and a thickness of 0.508 mm; the square structural formula outside the window type topological structure is formed by eight sections of high-impedance lines, the line width is 0.45mm, and the length of each section of microstrip line is 19.0 mm; the internal transmission line is of a cross structure and is composed of 4 sections of microstrip lines, the line width is 0.8mm, and the length of each section of microstrip line is 19.6 mm; . The central frequency of the lumped resonance unit is consistent with the central frequency of the operation of the cross device, the capacitance structures (14, 16, 18 and 20) adopt ceramic patches, the capacitance value of the capacitance structures is 1.4pF, the inductance structures (13, 15, 17 and 19) adopt fixed inductors, and the inductance value of the inductance structures is 3.4 nH;
in this embodiment, the center frequency of the broadband cross of the present invention is 2.4GHz, the four ports realize independent transmission and mutual isolation of two signal plane stages, and only the condition of the input signal of port 1 is considered due to the passive symmetry and reciprocity of the device.
The specific implementation of the broadband operation of the interleaver can be understood as follows: referring to fig. 2, the center frequency of the interleaver operation is 2.4GHz, S11 corresponds to return (matching) loss, its 15-dB absolute bandwidth is 1.97GHz to 2.77GHz, and the relative bandwidth is 33.8%; s31 corresponds to insertion loss, the 1-dB absolute bandwidth is 1.91GHz to 2.82GHz, and the relative bandwidth is 38.5%; s21 and S41 respectively correspond to the isolation between the port 1 and the ports 2 and 4, the absolute bandwidth of the 15-dB isolation is 1.33GHz to 2.90GHz, and the relative bandwidth is 74.2%;
corresponding to the wide-band frequency range of the operation of the interleaver, referring to fig. 3, the phase shift of the output signal of port 3 compared with the input signal of port 1 in the vicinity of 2.4GHz shows a linear change, which indicates that the relative phase relationship of the frequency components is kept constant and the signal transmission is not distorted when the wide-band signal passes through the interleaver.
The above description is only an embodiment of the present invention, and the description is specific, but it should not be taken as limiting the scope of the present invention. Any feature disclosed in this specification may, unless stated otherwise, be replaced by alternative features serving equivalent or similar purposes; all of the disclosed features, or all of the method or process steps, may be combined in any combination, except mutually exclusive features and/or steps. Therefore, the specific protection scope of the present application shall be subject to the appended claims.
Claims (5)
1. The utility model provides a broadband cross ware based on mix lumped distribution parameter network, includes metal ground plate, dielectric substrate and dielectric substrate upper circuit from bottom to top in proper order, its characterized in that:
a metalized through hole is formed in the dielectric substrate; the upper-layer circuit of the dielectric substrate comprises a window-type topological structure, ports, a feeder line and a lumped resonant unit;
the window type topological structure is used for realizing the cross passing of signals and consists of a high-impedance microstrip line with the resistance larger than 50 ohms and a low-impedance microstrip line with the resistance smaller than 50 ohms; the ports are arranged on the medium substrate, at least 2 groups of ports are arranged, each group of ports comprises an input port and an output port, the input port and the output port are respectively connected with the window type topological structure through a feeder line to form a signal path, and the central points of all the signal paths are crossed; the signal input by the input port is transmitted to the low-impedance microstrip line through the high-impedance microstrip line and then transmitted to the output end through the low-impedance microstrip line after passing through the central point;
the feeder lines are connected with lumped resonance units, and each lumped resonance unit is formed by connecting a capacitor structure and an inductor structure in parallel; the output ends of the capacitor structure and the inductor structure are connected with the metalized through holes so as to realize the parallel grounding of the lumped resonance unit.
2. The hybrid lumped distribution parameter network based broadband interleaver according to claim 1 wherein: the high-impedance microstrip line in the window type topological structure forms a square structure, and 4 convex bending parts are arranged on each side of the square at equal distance; the low-impedance microstrip line is arranged in the square to form a cross-shaped structure, the central positions of four sides of the cross are respectively provided with 1 raised bending part along the clockwise direction of the cross, and the upper end, the lower end, the left end and the right end of the cross-shaped structure are respectively intersected with the middle points of four sides of the square; and 4 vertexes of the square are respectively provided with a feeder line, the end part of the other end of the feeder line is provided with a port, and the 4 ports are formed by using two diagonal ports as a group.
3. The hybrid lumped distribution parameter network based broadband interleaver according to claim 1 wherein: the square structure adopts 8 sections of high-impedance lines with the same size, the line width of each section of high-impedance line is 0.25-0.55 mm, and the line length is 16-21.0 mm; the cross-shaped structure adopts 4 sections of low-impedance lines with the same size, the line width of each section of low-impedance line is 0.7-0.9 mm, and the line length is 18-20.5 mm.
4. The hybrid lumped distribution parameter network based broadband interleaver according to claim 1 wherein: the center frequency of the lumped resonant cell, with which the resonant response extends the bandwidth, is set to the center frequency of the interleaver operation.
5. The hybrid lumped distribution parameter network based broadband interleaver according to claim 1 wherein: the dielectric substrate has a relative dielectric constant of 3.43-3.53, a thickness of 0.508mm and a size of 50mm × 50 mm.
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| CN112514248A (en) * | 2018-05-30 | 2021-03-16 | 斯威特科技有限公司 | Wideband Low Noise Amplifier (LNA) with reconfigurable bandwidth for millimeter wave 5G communications |
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2021
- 2021-05-10 CN CN202110505328.9A patent/CN113328225A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2006173697A (en) * | 2004-12-13 | 2006-06-29 | Matsushita Electric Ind Co Ltd | Antenna system |
| JP2008187459A (en) * | 2007-01-30 | 2008-08-14 | Mitsubishi Electric Corp | Rat-race hybrid |
| CN105762490A (en) * | 2014-12-19 | 2016-07-13 | 联想(北京)有限公司 | Antenna |
| CN112514248A (en) * | 2018-05-30 | 2021-03-16 | 斯威特科技有限公司 | Wideband Low Noise Amplifier (LNA) with reconfigurable bandwidth for millimeter wave 5G communications |
Non-Patent Citations (4)
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| CHING-WEN TANG等: "Design of a microstrip dual-band crossover with asymmetrical π-shaped transmission lines", 《IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS》 * |
| CHING-WEN TANG等: "Design of a microstrip dual-band crossover with asymmetrical π-shaped transmission lines", 《IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS》, 30 September 2015 (2015-09-30), pages 588 - 590, XP011667772, DOI: 10.1109/LMWC.2015.2451398 * |
| YI-CHYUN CHIOU等: "Design of compact symmetric four-port crossover junction", 《IEEE MICROWAVE AND WIRELESS COMPONETES LETTERS》 * |
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Application publication date: 20210831 |