CN113325497A - Dual-wavelength ultra-narrow bandwidth medium metamaterial absorber and preparation method thereof - Google Patents
Dual-wavelength ultra-narrow bandwidth medium metamaterial absorber and preparation method thereof Download PDFInfo
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- CN113325497A CN113325497A CN202110568269.XA CN202110568269A CN113325497A CN 113325497 A CN113325497 A CN 113325497A CN 202110568269 A CN202110568269 A CN 202110568269A CN 113325497 A CN113325497 A CN 113325497A
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Abstract
The invention provides a dual-wavelength ultra-narrow bandwidth medium metamaterial absorber, which comprises: an Au substrate layer; SiO arranged on Au substrate layer2A dielectric layer; and is provided on SiO2The asymmetric grating is made of Si materials on the medium layer, and a first grating and a second grating which are the same in height and different in width are arranged in each period of the asymmetric grating. The invention also provides a preparation method of the dual-wavelength ultra-narrow bandwidth medium metamaterial absorber. The dual-wavelength ultra-narrow bandwidth dielectric metamaterial absorber provided by the invention is based on a time domain finite difference method and through specific size design, Fabry-Perot (FP) cavity resonance aiming at the wavelength lambda 1 is formed on an SiO2 dielectric layer, and the wavelength is lambda2Of incident lightThe guided mode resonance effect is formed in the dielectric asymmetric grating, thereby simultaneously realizing the wavelength lambda1And λ2The absorption efficiency is very high. The preparation method can provide a high-quality dual-wavelength narrow-band (sub-nanometer level) wide-medium metamaterial absorber for solar cells, light modulators and the like.
Description
Technical Field
The invention relates to the technical field of semiconductor optical devices, in particular to a dual-wavelength ultra-narrow bandwidth medium metamaterial absorber and a preparation method thereof.
Background
Perfect absorption of electromagnetic waves is required in many applications, such as solar cells, heat emitters, radiation cooling, detection, etc. However, absorbers made of naturally occurring materials do not completely suppress light reflection due to impedance mismatch caused by lack of magnetic response, thereby reducing the light absorption capability of the absorber. For this reason, an absorber based on a metamaterial has been proposed, and has been gradually noticed and has become one of the research focuses due to the advantages of a Metamaterial Absorber (MA) that has high absorption efficiency for electromagnetic waves, a small volume, and a settable working wavelength.
With the intensive research of people, different types of MA are gradually designed and prepared by people, such as wide-bandwidth MA, narrow-bandwidth MA, terahertz MA, tunable MA, and the like. Narrow bandwidth MAs are of interest because they are more efficient at detection and thermal emitters than wide bandwidth MAs, and only narrow bandwidth MAs are satisfactory in light modulation, light detection, and thermal radiation tailoring. At present, narrow-bandwidth MAs with different structures have been proposed, Min Qiu et al of the royal institute of technology, swiden, 2014 propose to etch metal gratings on silver (Ag) metal substrates, successfully realize narrow-bandwidth absorption of MA at a wavelength of 1400nm based on surface plasmon resonance formed by Ag gratings and air media, and the line width (FWHM) of MA can reach 0.4 nm; FENG A et al of hong Kong Chinese university in 2018 proposes a narrow bandwidth MA consisting of an asymmetric metal grating and a metal substrate, and a silicon dioxide transition layer is added between the grating and the substrate, and the narrow bandwidth MA realizes ultra-narrow absorption in an optical communication waveband through simulation calculation, wherein the FWHM is only 0.28 nm; in the next year, KANG S et al at university of southeast university propose to etch a cross-shaped nano-array made of gold (Au) material on a silicon dioxide substrate, and simultaneously grow a layer of Au thin layer on the other surface of the silicon dioxide to inhibit transmission, and tests show that the MA can realize narrow bandwidth absorption in terahertz wave band.
From the above, it can be found that the materials used in the micro-nano structure in the narrow-bandwidth MA are all metal materials, but the metal materials have ohmic loss and the fine metal materials have processing problems at high frequency, which may affect the application and popularization of MA in the future to a certain extent. To this end, some groups of subjects propose the design and manufacture of narrow bandwidth MAs using dielectric materials. The Zhibin Ren et al, the university of Harbin industry in 2019, designs and prepares MA with narrow bandwidth absorption in the infrared band by using silicon nitride and indium tin oxide materials, and tests show that the FWHM of the MA with narrow bandwidth can reach 2.6 nm; in the next year, Yan ZHao et al, university of Anhui, proposed to directly etch a dielectric grating composed of silicon material on a metal substrate, and through simulation calculation, the FWHM of the narrow bandwidth MA can reach 0.38 nm.
Although the use of dielectric materials to design narrow bandwidth MAs can reduce manufacturing costs and improve absorption efficiency, and the absorption bandwidth can be kept at sub-nanometer level, it can be found that there are currently few MAs that achieve multi-wavelength narrow bandwidth (sub-nanometer level) absorption, which can limit the applications of narrow bandwidth MAs in some situations, such as in optical spectrum detection, gas detection, where multi-wavelength narrow bandwidth MAs can improve their operating efficiency.
Disclosure of Invention
The invention aims to provide a dual-wavelength ultra-narrow bandwidth medium metamaterial absorber and a preparation method thereof, and the purpose is realized by the following technical scheme.
The first aspect of the invention is a dual-wavelength ultra-narrow bandwidth medium metamaterial absorber, comprising:
an Au substrate layer;
SiO arranged on Au substrate layer2A dielectric layer;
and is provided on SiO2The asymmetric grating is made of Si materials on the medium layer, and a first grating and a second grating which are the same in height and different in width are arranged in each period of the asymmetric grating.
Further, the width ratio of the first grating to the second grating is 2: 3, the distance is equal to the width of the first grating, and the period width of the asymmetric grating is 2-2.5 times of the sum of the widths of the first grating and the second grating; the SiO2The thickness of the dielectric layer is 4 times of the width of the second grating.
In an illustrative embodiment, the first grating has a width w1Is 0.2um, the width w of the grating two2Is 0.3 um.
In an embodiment, the height h of the first grating and the second grating is 0.78-0.8 um.
In an illustrated embodiment, the Au substrate layer has a thickness of 0.2 um.
The first aspect of the invention is a preparation method of the dual-wavelength ultra-narrow bandwidth medium metamaterial absorber, which comprises the following steps:
s1, growing SiO on the Au substrate by magnetron sputtering in sequence2A layer and a thin layer of Si;
s2, spin-coating electron beam resist on the Si thin layer, and forming an asymmetric grating pattern on the resist after electron beam exposure and development;
and S3, removing photoresist, and transferring the asymmetric grating pattern to a Si thin layer by using a plasma etching technology.
The invention has the following beneficial technical effects:
the invention relates to a dual-wavelength ultra-narrow bandwidth medium metamaterial absorber which is composed of an Au substrate and SiO2The medium layer and the Si medium are formed by asymmetric grating, based on the finite difference method of time domain and through specific size design, the grating is formed on SiO2The dielectric layer forms a dielectric layer for a wavelength lambda1Is resonant with a Fabry-Perot (FP) cavity and has a wavelength of λ2The incident light forms a guided mode resonance effect in the dielectric asymmetric grating, thereby simultaneously realizing the wavelength lambda1And λ2The absorption efficiency is very high. The method can provide high-quality dual-wavelength narrow-band (sub-nanometer level) wide-medium metamaterial absorbers for solar cells, light modulators and the like.
Drawings
FIG. 1 is a schematic structural diagram of an embodiment of a dual-wavelength ultra-narrow bandwidth dielectric metamaterial absorber according to the present invention.
FIG. 2 is a simulation diagram of electric field distribution calculation at different wavelengths for an embodiment of a dual wavelength ultra-narrow bandwidth dielectric metamaterial absorber of the present invention.
FIG. 3 is a simulation diagram of absorption spectrum calculation of the embodiment of the dual wavelength ultra-narrow bandwidth dielectric metamaterial absorber of the present invention.
Detailed Description
For a further understanding of the invention, reference will now be made to the preferred embodiments of the invention by way of example, and it is to be understood that the description is intended to further illustrate features and advantages of the invention, and not to limit the scope of the claims.
Example 1
Referring to fig. 1, the present embodiment provides a dual-wavelength ultra-narrow bandwidth dielectric metamaterial absorber, including: au substrate layer 1, SiO disposed on Au substrate layer 12A dielectric layer 2; and is provided on SiO2And the asymmetric grating is made of Si materials on the dielectric layer, and a first grating 31 and a second grating 32 which are the same in height and different in width are arranged in each period of the asymmetric grating.
In a preferred illustrated embodiment, the ratio of the widths of grating one 31 to grating two 32 is 2: 3, the distance is equal to the width of the first grating 31, and the period width of the asymmetric grating is 2-2.5 times of the sum of the widths of the first grating 31 and the second grating 32; the SiO2The thickness of the dielectric layer is 4 times of the width of the second grating.
By adopting the design, the material can be made in SiO2 Dielectric layer 2 is formed for wavelength λ1Is resonant with a Fabry-Perot (FP) cavity and has a wavelength of λ2The incident light forms guided mode resonance effect in the Si medium asymmetric grating, thereby simultaneously realizing the wavelength lambda1And λ2The absorption efficiency is very high. The principle is further illustrated as follows:
as shown in FIGS. 2(a) and (b), the dual-wavelength ultra-narrow bandwidth dielectric metamaterial absorber in this embodiment is respectively arranged at the wavelength λ1And λ2And calculating a simulation diagram of the electric field distribution. As can be seen from FIG. 2(a), the dual-wavelength ultra-narrow bandwidth dielectric metamaterial absorber in this embodiment is at wavelength λ1The narrow bandwidth high absorption occurs because most of the light is confined to SiO2In the dielectric layer, a small portion of the light is confined in the asymmetric grating. Thus, the incident light is in SiO2Fabry-Perot (FP) cavity resonance is formed in the dielectric layer. FIG. 2(b) shows the dual wavelength ultra-narrow bandwidth dielectric metamaterial absorber in this embodiment at wavelength λ2Electric field distribution ofAnd at a wavelength λ1The electric field distribution of (2) is different, at which time the light is no longer confined to SiO2The medium layer is limited in the grating instead, and the electric field distribution can be used for judging that the incident light forms guided mode resonance in the grating and the absorber is in the wavelength lambda due to the guided mode resonance2The bandwidth of (a) is narrow.
Example 2
This example is a specific preferred embodiment of the dual wavelength ultra-narrow bandwidth dielectric metamaterial absorber of example 1, referring to fig. 1, in this example, the width w of the grating one 311Is 0.2um, the width w of the grating two 3220.3um, the height h of the first grating 31 and the second grating 32 is 0.78um, the distance g between the first grating 31 and the second grating 32 is 0.2um, and the period width P of the asymmetric grating is 1.05 mu m. SiO22The thickness t of the dielectric layer is 1.2 um. The thickness of the Au substrate layer 1 is 0.2 um.
And establishing a single-period two-dimensional physical model of the dual-wavelength ultra-narrow bandwidth medium metamaterial absorber with the size by using FDTD software, then adding a periodic boundary condition in the x direction, adding a perfect matching layer boundary condition in the z direction, and defaulting the y direction to be the infinite length of the grating. Finally, add the light source directly above the absorber, with the source polarization set to TE polarization, the angle of incidence set to 0 °, and air around MA, with index of refraction n 1. The simulation results refer to fig. 2. As can be seen from the figure, the dual-wavelength ultra-narrow bandwidth dielectric metamaterial absorber in the embodiment is respectively arranged at the wavelength lambda11.20852 μm and λ21.23821 μm has ultrahigh absorption efficiency, and the absorption line widths FWHM are 0.735nm and 0.077nm, respectively. By comparison, compared with literature 1[ MENG L, ZHAO D, RUAN Z, et al].Optics Letters,2014,39(5):1137-1140.]Document 2[ FENG A, YU Z, SUN X. ultrasonic-band gauging absorbers for sensing and modulation [ J].Optics Express,2018,26(22):28197-28205.]And document 3[ RRN Z, SUN Y, LIN Z, et al.ultra-narrow band transistor based on dielectric-metallic dielectric configuration [ J].Optical Materials,2019,89(3.):308-315.]In this embodiment, the dual wavelength ultra narrow bandWide dielectric metamaterial absorbers at wavelength λ2The line width of the region is obviously reduced (by one order of magnitude), and narrow bandwidth absorption is realized.
Example 3
The embodiment is a preparation method of the dual-wavelength ultra-narrow bandwidth medium metamaterial absorber in the embodiment, which is compatible with the existing micro-nano processing technology, and specifically comprises the following steps:
firstly growing SiO2 and Si thin layers on an Au substrate by magnetron sputtering, then spin-coating electron beam resist on the Si thin layers, forming an asymmetric grating pattern on the resist after electron beam exposure and development, then removing the resist and transferring the pattern to the Si thin layers by utilizing an inductively coupled plasma etching technology, and finally preparing the dual-wavelength ultra-narrow bandwidth medium metamaterial absorber.
The above description of the embodiments is only intended to facilitate the understanding of the method of the invention and its core idea. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention.
Claims (6)
1. A dual-wavelength ultra-narrow bandwidth medium metamaterial absorber is characterized by comprising:
an Au substrate layer (1);
SiO arranged on Au substrate layer (1)2A dielectric layer (2);
and is provided on SiO2The asymmetric grating is made of Si materials on the medium layer, and a first grating (31) and a second grating (32) which are the same in height and different in width are arranged in each period of the asymmetric grating.
2. The dual wavelength ultra narrow bandwidth dielectric metamaterial absorber of claim 1, wherein the ratio of the widths of the grating one (31) to the grating two (32) is 2: 3, the distance is equal to the width of the first grating (31), and the period width of the asymmetric grating is 2-2.5 times of the sum of the widths of the first grating (31) and the second grating (32); the SiO2The thickness of the dielectric layer is 4 times of the width of the second grating.
3. The dual wavelength ultra narrow bandwidth dielectric metamaterial absorber of claim 2, wherein the width w of the grating one (31)1Is 0.2um, the width w of the grating two (32)2Is 0.3 um.
4. The dual wavelength ultra-narrow bandwidth dielectric metamaterial absorber of claim 2, wherein the height h of the grating one (31) and the grating two (32) is 0.78-0.8 um.
5. The dual wavelength ultra narrow bandwidth dielectric metamaterial absorber of claim 2, wherein the thickness of the Au substrate layer (1) is 0.2 um.
6. The method for preparing a dual wavelength ultra narrow bandwidth dielectric metamaterial absorber of any of the claims 1-5, including the steps of:
s1, growing SiO on the Au substrate by magnetron sputtering in sequence2A layer and a thin layer of Si;
s2, spin-coating electron beam resist on the Si thin layer, and forming an asymmetric grating pattern on the resist after electron beam exposure and development;
and S3, removing photoresist, and transferring the asymmetric grating pattern to a Si thin layer by using a plasma etching technology.
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| CN115657184A (en) * | 2022-12-12 | 2023-01-31 | 华侨大学 | Sub-wavelength asymmetric grating structure with infrared light modulation characteristic and manufacturing method |
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Non-Patent Citations (2)
| Title |
|---|
| SUJUAN FENG ETC: "Dual-band dielectric metamaterial absorber and sensing applications", 《RESULTS IN PHYSICS》 * |
| XIN HE ETC.: "Asymmetric dielectric grating on metallic film enabled dual- and narrow-band absorbers", 《OPTICS EXPRESS》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115657184A (en) * | 2022-12-12 | 2023-01-31 | 华侨大学 | Sub-wavelength asymmetric grating structure with infrared light modulation characteristic and manufacturing method |
| CN115657184B (en) * | 2022-12-12 | 2023-03-31 | 华侨大学 | Sub-wavelength asymmetric grating structure with infrared light modulation characteristic and manufacturing method |
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