CN113314937B - Compact type middle and far infrared laser device - Google Patents
Compact type middle and far infrared laser device Download PDFInfo
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- CN113314937B CN113314937B CN202110561536.0A CN202110561536A CN113314937B CN 113314937 B CN113314937 B CN 113314937B CN 202110561536 A CN202110561536 A CN 202110561536A CN 113314937 B CN113314937 B CN 113314937B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
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- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
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- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
- H01S3/1616—Solid materials characterised by an active (lasing) ion rare earth thulium
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
- H01S3/164—Solid materials characterised by a crystal matrix garnet
- H01S3/1643—YAG
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Abstract
The invention relates to the technical field of solid lasers, in particular to a compact type middle and far infrared laser device which comprises a high-reflection mirror, a laser gain module, a polaroid, an input mirror, a nonlinear optical medium, a first output mirror and a second output mirror; the high-reflection mirror, the laser gain module, the polaroid and the first output mirror are sequentially arranged to form a first laser resonant cavity; the high reflecting mirror, the laser gain module, the polaroid, the input mirror, the nonlinear optical medium and the second output mirror are sequentially arranged to form a second laser resonant cavity; the input mirror, the nonlinear optical medium and the second output mirror are sequentially arranged to form a third laser resonant cavity. Compared with the prior art, the invention adopts the optimized resonant cavity structure design, particularly utilizes Tm: YAG crystal to generate high-power-2 mu m polarized laser and then utilizes OPO in the cavity to generate mid-far infrared laser variable frequency laser output, so that the device has compact structure, small occupied space and low cost, and greatly improves the output power.
Description
Technical Field
The invention relates to the technical field of solid lasers, in particular to a compact type middle and far infrared laser device.
Background
The medium-far infrared laser source is widely applied in the fields of material processing, medical treatment and detection. Currently, mid-infrared laser sources are obtained mainly by ZnGeP 2 The crystal (called ZGP for short) is generated by frequency conversion (such as optical parameter OPO), specifically, a 790nm LD is adopted to pump Tm, namely YLF crystal to generate 1.9 mu m linear polarized light, the generated 1.9 mu m linear polarized light is used to pump Ho, namely YAG crystal to generate 2.07 mu m laser, and then the intermediate infrared laser is generated through the optical parameter frequency conversion process. In the process of obtaining the intermediate infrared laser source, the used ZGP crystal can only adopt laser with the diameter of more than 2 micrometers for pumping, and because the physical process is many and complicated, the correspondingly adopted system efficiency is not high, and the practical performances of system miniaturization and the like are also limited.
Disclosure of Invention
The invention aims to provide a compact type middle and far infrared laser device, which realizes the output of middle and far infrared laser by a compact type structure with small occupied space, improves the output power and reduces the cost.
The technical scheme for solving the technical problem is as follows: a compact middle and far infrared laser device comprises a high reflection mirror, a laser gain module, a polaroid, an input mirror, a nonlinear optical medium, a second output mirror and a first output mirror; the high-reflection mirror, the laser gain module, the polaroid and the first output mirror are sequentially arranged to form a first laser resonant cavity; the high reflecting mirror, the laser gain module, the polaroid, the input mirror, the nonlinear optical medium and the second output mirror are sequentially arranged to form a second laser resonant cavity; the input mirror, the nonlinear optical medium and the second output mirror are sequentially arranged to form a third laser resonant cavity.
Further, in the compact mid-far infrared laser device of the present invention, two sets of light are generated by separating the polarizer, wherein the light paths corresponding to the two sets of light are a first light path and a second light path, respectively; the first output mirror is arranged along the first optical path; the input mirror, the nonlinear optical medium and the second output mirror are sequentially arranged along the second light path.
Preferably, in the compact mid-far infrared laser device of the present invention, the reflected light and the transmitted light are separated by the polarizing plate; the light path corresponding to the reflected light is the first light path, and the light path corresponding to the transmitted light is the second light path; or the light path corresponding to the reflected light is the second light path, and the light path corresponding to the transmitted light is the first light path.
Further, in the compact mid-far infrared laser device of the present invention, the laser gain module includes a pump source, a laser gain medium, and a heat sink, wherein the laser gain medium is embedded in the heat sink, and the pump source is disposed at a side portion or an end portion of the laser gain medium.
Preferably, in the compact mid-far infrared laser device of the present invention, the laser gain medium is represented by Tm: YAG crystal material.
Preferably, in the compact mid-far infrared laser device of the present invention, the pump source is a laser diode having a wavelength in a band of 780nm to 790 nm.
Further, in the compact mid-far infrared laser device according to the present invention, the nonlinear optical medium is composed of a ZGP crystal material.
Preferably, in the compact mid-far infrared laser device of the present invention, the high reflection mirror, the first output mirror, the second output mirror and the input mirror are all provided with coatings for fundamental laser light, and the second output mirror and the input mirror are all provided with coatings for target wavelength variable frequency laser light; the first laser resonant cavity and the second laser resonant cavity are both fundamental frequency laser resonant cavities, and the third laser resonant cavity is a target wavelength frequency conversion laser resonant cavity.
Preferably, in the compact mid-far infrared laser device of the present invention, the fundamental laser is a laser in a 2 μm band.
Preferably, in the compact mid-far infrared laser device of the present invention, the target wavelength variable frequency laser is a laser in a wavelength band of 2 μm to 14 μm.
Preferably, in the compact mid-far infrared laser device of the present invention, the high reflection mirror is plated with a film having a high reflectivity for fundamental laser light; the first output mirror is plated with a film with preset transmittance for fundamental laser; the second output mirror is plated with a film which has high reflectivity for fundamental frequency laser and preset transmissivity for target wavelength frequency conversion laser; the input mirror is coated with a coating having a high reflectivity for a target wavelength variable frequency laser and a high transmittance for a fundamental frequency laser.
Preferably, in the compact mid-far infrared laser device of the present invention, the transmittance of the first output mirror for fundamental laser light is 0.5% to 10%; the reflectivity of the second output mirror to the fundamental laser is more than 98%, and the transmissivity to the target wavelength frequency conversion laser is 5% -70%; the reflectivity of the input mirror to the target wavelength frequency conversion laser is larger than 98%, and the transmittance to the fundamental frequency laser is larger than 95%; the reflectivity of the high-reflection mirror to fundamental laser light is more than 98%.
The technical scheme provided by the invention has the beneficial technical effects that: compared with the prior art, the device has the advantages that the optimized structural design is adopted, the device is compact in structure, small in occupied space and low in cost, the medium and far infrared laser output can be efficiently realized, and the output power is greatly improved.
Drawings
FIG. 1 is a schematic structural diagram of a compact mid-far infrared laser device according to the present invention;
FIG. 2 is a schematic structural diagram of the compact mid-far infrared laser device of the present invention;
FIG. 3 is a schematic structural diagram (I) of a laser gain module of the compact mid-far infrared laser device according to the present invention;
fig. 4 is a schematic structural diagram (two) of a laser gain module of the compact mid-far infrared laser device according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings in conjunction with the following detailed description. It should be understood that the description is intended to be exemplary only, and is not intended to limit the scope of the present invention. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present invention.
In the drawings, there is shown a schematic structural diagram according to an embodiment of the invention. The figures are not drawn to scale, wherein certain details are exaggerated and possibly omitted for clarity. The shapes of the various regions, layers and their relative sizes, positional relationships are shown in the drawings as examples only, and in practice deviations due to manufacturing tolerances or technical limitations are possible, and a person skilled in the art may additionally design regions/layers with different shapes, sizes, relative positions according to the actual needs.
In some embodiments of the present invention, as shown in fig. 1, a compact mid-far infrared laser device of the present invention includes a high reflection mirror 2, a laser gain module 1, a polarizer 3, an input mirror 5, a nonlinear optical medium 7, a second output mirror 6, and a first output mirror 4; the high reflecting mirror 2, the laser gain module 1, the polaroid 3 and the first output mirror 4 are sequentially arranged to form a first laser resonant cavity; the high reflecting mirror 2, the laser gain module 1, the polaroid 3, the input mirror 5, the nonlinear optical medium 7 and the second output mirror 6 are sequentially arranged to form a second laser resonant cavity; the input mirror 5, the nonlinear optical medium 7 and the second output mirror 6 are sequentially arranged to form a third laser resonant cavity.
In the above embodiment, in order to facilitate efficient output of the mid-far infrared laser, two sets of light are generated by separating the polarizer 3, where the light paths corresponding to the two sets of light are the first light path and the second light path respectively; the first output mirror 4 is arranged along the first optical path; the input mirror 5, the nonlinear optical medium 7 and the second output mirror 6 are sequentially arranged along the second optical path. Preferably, the polarizer 3 separates and generates reflected light and transmitted light, wherein the optical path corresponding to the transmitted light is the first optical path, and the optical path corresponding to the reflected light is the second optical path. Preferably, the first light path and the second light path are perpendicular to each other, so that efficient output of the mid-far infrared laser is facilitated.
In the above embodiment, to ensure high power output of the mid-far infrared laser, preferably, the high-reflection mirror 2 and the polarizer 3 are symmetrically disposed on both sides of the laser gain module 1, the first output mirror 4 and the input mirror 5 are disposed at equal distance from the polarizer 3, and the input mirror 5 and the second output mirror 6 are symmetrically disposed on both sides of the nonlinear optical medium 7.
When the compact type middle and far infrared laser device of the embodiment is applied, fundamental laser is generated through the laser gain module 1; after the fundamental laser generated by the laser gain module 1 reaches the polaroid 3, the fundamental laser is separated by the polaroid 3 to generate reflected light and transmitted light, wherein the reflected light is s-polarized laser, and the transmitted light is p-polarized laser; the high-reflection mirror 2 is used for high-reflecting the laser contacted with the high-reflection mirror; the input mirror 5 is used for highly transmitting the fundamental frequency laser light contacted with the input mirror 5 and highly reflecting the target wavelength variable frequency laser light contacted with the input mirror, wherein the laser light transmitted by the input mirror 5 is input to the nonlinear optical medium 7 and provides the fundamental frequency light for the nonlinear optical medium; the nonlinear optical medium 7 generates target wavelength variable frequency laser under the action of fundamental frequency light; the second output mirror 6 and the first output mirror 4 both reflect and partially transmit the laser light contacted with the second output mirror; thus, the resonance of fundamental laser is formed through the first laser resonant cavity and the second laser resonant cavity, the resonance of the target wavelength variable frequency laser is formed through the third laser resonant cavity, and the target wavelength variable frequency laser is output through the second output mirror 6. From this, through adopting the mode that sets up the resonant cavity in the resonant cavity, make device overall structure compact, miniaturization, occupation space is little, does benefit to reduce cost, also provides the guarantee for the high-efficient far infrared laser output that realizes simultaneously, and does benefit to and improve output by a wide margin.
In other embodiments, basically the same as the above embodiments are set, specifically, as shown in fig. 2, reflected light and transmitted light are separately generated by the polarizer 3, where the optical path corresponding to the reflected light is the first optical path, and the optical path corresponding to the transmitted light is the second optical path; the first output mirror 4 is arranged along the first optical path; the input mirror 5, the nonlinear optical medium 7 and the second output mirror 6 are sequentially arranged along the second optical path; in order to facilitate efficient laser output, the first optical path and the second optical path are preferably arranged vertically; the specific application of this embodiment is the same as the above embodiment.
In the above embodiment, to obtain high-power mid-far infrared laser, preferably, as shown in fig. 3 and 4, the laser gain module 1 includes a pump source 11, a laser gain medium 12 and a heat sink 13, wherein the laser gain medium 12 is embedded in the heat sink 13, and the pump source 11 is disposed at a side portion (shown in fig. 3) or an end portion (shown in fig. 4) of the laser gain medium 12. In order to efficiently provide pumping light to the Laser gain medium 12, the pump source 11 is preferably a Laser Diode (LD) with a wavelength of 780nm to 790nm, and pumps the Laser gain medium 12, so that the Laser gain medium 12 generates stimulated radiation, and Laser with a desired wavelength or wavelength band is generated more efficiently.
In the above embodiment, the laser gain medium 12 is preferably made of Tm: YAG crystal material, and the excellent performance can be fully exerted through the optimized structure arrangement of the first laser resonant cavity, the second laser resonant cavity and the third laser resonant cavity, so that the Tm: the laser generated by the laser gain medium 12 made of YAG crystal oscillates in the three groups of laser resonator cavities, and the polarization state evolves along with the gain loss in the oscillation process, so that the gain and loss of the laser gain medium 12 are controlled, and the high-power laser output of the laser gain medium 12 is realized.
In the above embodiment, the nonlinear optical medium 7 is preferably made of ZGP crystal material, and the ZGP crystal is pumped by the fundamental laser, and further matched with the matching of the gain losses of the first output mirror 4, the input mirror 5, and the second output mirror 6, so as to facilitate the output of the target wavelength variable frequency laser.
In the above embodiment, in order to ensure efficient output of the mid-far infrared laser, i.e. the target wavelength variable frequency laser, preferably, the high reflection mirror 2, the first output mirror 4, the second output mirror 6 and the input mirror 5 are all provided with a coating film for the fundamental frequency laser, and the second output mirror 6 and the input mirror 5 are all provided with a coating film for the target wavelength variable frequency laser; the first laser resonant cavity and the second laser resonant cavity are both fundamental frequency laser resonant cavities, and the third laser resonant cavity is a target wavelength frequency conversion laser resonant cavity, so that fundamental frequency laser oscillation is formed in the first laser resonant cavity and the second laser resonant cavity, and target wavelength frequency conversion laser oscillation is formed in the third laser resonant cavity.
More preferably, the high-reflection mirror 2 is plated with a film having a high reflectivity for fundamental laser light, and the plated film is disposed toward the laser gain module 1, so as to facilitate achieving high reflection of the fundamental laser light; when the pump source 11 is disposed at the end of the laser gain medium 12 (as shown in fig. 4), the high-reflection mirror 2 is coated with a film having high transmittance for the pump light, and preferably, the transmittance of the high-reflection mirror 2 for the pump light in the 780nm to 790nm band can be greater than 99.8% through the coating. Preferably, the first output mirror 4 is plated with a film having a predetermined transmittance for the fundamental laser light, so as to ensure the transmittance for the relevant fundamental laser light. More preferably, the second output mirror 6 is coated with a film having a high reflectivity for the fundamental laser light and a predetermined transmittance for the target wavelength variable frequency laser light, so as to facilitate achieving high reflection of the relevant fundamental laser light and high-efficiency transmission output of the relevant target wavelength variable frequency laser light. More preferably, the input mirror 5 is coated with a film having high reflectivity for the target wavelength-converted laser light and high transmittance for the fundamental laser light, so as to facilitate high reflection of the relevant target wavelength-converted laser light and high efficiency transmission output for the relevant fundamental laser light. Through the arrangement, fundamental frequency laser oscillation is formed in the first laser resonant cavity and the second laser resonant cavity, target wavelength variable frequency laser oscillation is formed in the third laser resonant cavity, and efficient output of far infrared laser in target wavelength variable frequency laser is further realized through a more miniaturized compact structure.
In the above embodiment, the fundamental frequency laser may be determined according to the mid-far infrared laser required by the specific working condition, and the specific target wavelength variable frequency laser of the required mid-far infrared laser is also determined according to the specific working condition, so as to more fully realize the high-efficiency output of the high-power mid-far infrared laser, and the fundamental frequency laser is preferably a laser in a 2 μm waveband; the target wavelength variable frequency laser is preferably laser with a wave band of 2-14 mu m. More preferably, the 2 μm waveband is a laser with a wavelength of 2 μm to 2.1 μm; when the fundamental frequency laser is laser with a wave band of 2 mu m, the generated frequency conversion laser with the target wavelength is laser with a wave band of 2 mu m-14 mu m. Preferably, when a 2 μm band laser is used as the fundamental laser, the pump source 11 preferably uses an LD having a wavelength of 780nm to 790nm, and the laser gain medium 12 preferably uses a Tm: YAG crystal, the nonlinear optical medium 7 is preferably formed by ZGP crystal, the laser gain medium 12 is pumped by a pump source 11, the laser gain medium 12 is excited to radiate to generate laser with 2 μm wave band, the Tm is adopted, the YAG crystal generates 2 μm laser, and then the ZGP crystal is pumped to obtain middle and far infrared laser, therefore, the Tm is adopted, the YAG crystal generates high power-2 μm polarized laser (namely, fundamental frequency laser with 2 μm wave band), and then middle and far infrared laser target wavelength frequency conversion laser output is generated by the intracavity OPO. Preferably, the reflectivity of the high-reflection mirror 2 to fundamental laser light is greater than 98%; the transmittance of the first output mirror 4 to the fundamental laser is 0.5% -10%; the reflectivity of the second output mirror 6 to the fundamental frequency laser is more than 98%, and the transmissivity to the target wavelength frequency conversion laser is 5% -70%; the reflectivity of the input mirror 5 to the target wavelength frequency conversion laser is more than 98%, and the transmittance to the fundamental frequency laser is more than 95%. Therefore, in the specific application process, the precise control of the gain and the loss of the polaroid 3 is realized by coordinately adjusting the reflectivity of the high-reflection mirror 2 to the fundamental-frequency laser, the transmissivity of the first output mirror 4 to the fundamental-frequency laser, the reflectivity of the second output mirror 6 to the fundamental-frequency laser and the transmissivity of the second output mirror 6 to the target-wavelength variable-frequency laser, and the reflectivity of the input mirror 5 to the target-wavelength variable-frequency laser and the transmissivity of the fundamental-frequency laser, so that the high-power polarized laser with the waveband of 2μm is pumped into the nonlinear optical medium 7, the high-power output of the target-wavelength variable-frequency laser is further realized, and the high-power output of the target-wavelength variable-frequency laser with the waveband of 2μm-14μm is particularly facilitated.
In the above embodiment, in order to enable the compact structure of the three laser resonant cavities, that is, the first laser resonant cavity, the second laser resonant cavity, and the third laser resonant cavity, to more efficiently achieve output of far infrared laser in high-power target wavelength variable-frequency laser, preferably, the polarizer 3 is provided with a coating film for polarization at a preset angle, the preset angle is set according to working condition requirements, preferably, the polarizer 3 is provided with a coating film at 45 degrees or 55.6 degrees, wherein the 45-degree coating film is preferred, so that miniaturization of the whole device is facilitated, high reflection of the polarizer 3 is facilitated, and further, efficiency of pumping the nonlinear optical medium 7 with polarized laser generated by separation of the polarizer 3 is improved, thereby further providing guarantee for high-power output of target wavelength variable-frequency laser.
Generally, the compact type mid-far infrared laser device obtains target mid-far infrared laser, compared with the prior art, the optimized structural design of the OPO in the laser resonant cavity is adopted, mid-far infrared laser frequency conversion laser output is generated, at least one stage of laser process is reduced, the structure is more optimized, the device is more compact and miniaturized, the occupied space is favorably reduced, the cost is saved, and particularly, the mid-far infrared laser target wavelength frequency conversion laser output generated by the OPO in the cavity after high-power-2 mu m polarized laser is generated by a Tm: YAG crystal is greatly improved in the whole laser output efficiency and reliability.
It should be understood that the above-described embodiments of the present invention are merely illustrative of or explaining the principles of the invention and are not to be construed as limiting the invention. Therefore, any modifications, equivalents, improvements and the like which are made without departing from the spirit and scope of the present invention shall be included in the protection scope of the present invention. Further, it is intended that the appended claims cover all such variations and modifications as fall within the scope and boundaries of the appended claims or the equivalents of such scope and boundaries.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (10)
1. A compact type middle and far infrared laser device is characterized by comprising a high reflection mirror (2), a laser gain module (1), a polaroid (3), an input mirror (5), a nonlinear optical medium (7), a first output mirror (4) and a second output mirror (6); wherein,
the gain medium (12) of the laser gain module (1) is defined by a Tm: YAG crystal material; the laser is used for generating high-power 2 mu m wave band fundamental laser; the high reflecting mirror (2), the laser gain module (1), the polaroid (3) and the first output mirror (4) are sequentially arranged to form a first laser resonant cavity;
the high-reflection mirror (2), the laser gain module (1), the polaroid (3), the input mirror (5), the nonlinear optical medium (7) and the second output mirror (6) are sequentially arranged to form a second laser resonant cavity;
the input mirror (5), the nonlinear optical medium (7) and the second output mirror (6) are sequentially arranged to form a third laser resonant cavity;
the transmittance of the first output mirror (4) to the fundamental laser is 0.5% -10%;
the reflectivity of the second output mirror (6) to the fundamental frequency laser is more than 98%, and the transmissivity to the target wavelength frequency conversion laser is 5% -70%;
the reflectivity of the input mirror (5) to the target wavelength frequency conversion laser is larger than 98%, and the transmittance to the fundamental frequency laser is larger than 95%.
2. The compact mid-far infrared laser device according to claim 1, wherein two sets of lights are separately generated by the polarizing plate (3), wherein the two sets of lights correspond to optical paths of a first optical path and a second optical path, respectively; the first output mirror (4) is arranged along the first optical path; the input mirror (5), the nonlinear optical medium (7) and the second output mirror (6) are sequentially arranged along the second light path.
3. The compact mid-far infrared laser device according to claim 2, characterized in that the reflected light and the transmitted light are separated by the polarizing plate (3); the light path corresponding to the reflected light is the first light path, and the light path corresponding to the transmitted light is the second light path; or the light path corresponding to the reflected light is the second light path, and the light path corresponding to the transmitted light is the first light path.
4. The compact mid-far infrared laser device according to claim 1, characterized in that the laser gain module (1) comprises a pump source (11), a laser gain medium (12) and a heat sink (13), wherein the laser gain medium (12) is built in the heat sink (13), and the pump source (11) is arranged at a side or end of the laser gain medium (12).
5. The compact mid-far infrared laser device according to claim 4, wherein the pump source is a laser diode having a wavelength in a band of 780nm to 790 nm.
6. The compact mid-far infrared laser device as set forth in any one of claims 1 to 5, characterized in that the nonlinear optical medium is composed of ZGP crystal material.
7. The compact mid-far infrared laser device according to claim 6, characterized in that the high reflection mirror (2), the first output mirror (4), the second output mirror (6) and the input mirror (5) are provided with coatings for fundamental laser light, and the second output mirror (6) and the input mirror (5) are provided with coatings for target wavelength variable frequency laser light;
the first laser resonant cavity and the second laser resonant cavity are both fundamental frequency laser resonant cavities, and the third laser resonant cavity is a target wavelength frequency conversion laser resonant cavity.
8. The compact mid-far infrared laser device according to claim 7, wherein the target wavelength variable frequency laser is a laser of a 2 μm to 14 μm band.
9. The compact mid-far infrared laser device according to claim 7, characterized in that the highly reflective mirror (2) is plated with a film having a high reflectivity for fundamental laser light;
the first output mirror (4) is plated with a film with a preset transmittance for fundamental laser;
the second output mirror (6) is plated with a film which has high reflectivity for fundamental frequency laser and preset transmissivity for target wavelength variable frequency laser;
the input mirror (5) is coated with a coating film having high reflectivity for the target wavelength variable frequency laser and high transmittance for the fundamental frequency laser.
10. The compact mid-far infrared laser device according to claim 7,
the reflectivity of the high-reflection mirror (2) to fundamental laser is more than 98%.
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| CN202110561536.0A CN113314937B (en) | 2021-05-22 | 2021-05-22 | Compact type middle and far infrared laser device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101335424A (en) * | 2008-07-11 | 2008-12-31 | 华中科技大学 | Polarization coupled parallel Q modulating solid laser |
| CN103887698A (en) * | 2014-03-12 | 2014-06-25 | 华侨大学 | Efficient singular-pump-source and two-end-symmetric type pump laser |
| CN106099633A (en) * | 2016-07-07 | 2016-11-09 | 江苏师范大学 | The laser instrument that a kind of mid-infrared width wavestrip laser exports simultaneously |
| CN110932078A (en) * | 2019-11-25 | 2020-03-27 | 中国科学院合肥物质科学研究院 | Medium-far infrared multiband laser |
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| US10630044B2 (en) * | 2017-08-08 | 2020-04-21 | Han's Laser Technology Industry Group Co., Ltd. | Frequency-doubled laser and method of generating harmonic laser |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101335424A (en) * | 2008-07-11 | 2008-12-31 | 华中科技大学 | Polarization coupled parallel Q modulating solid laser |
| CN103887698A (en) * | 2014-03-12 | 2014-06-25 | 华侨大学 | Efficient singular-pump-source and two-end-symmetric type pump laser |
| CN106099633A (en) * | 2016-07-07 | 2016-11-09 | 江苏师范大学 | The laser instrument that a kind of mid-infrared width wavestrip laser exports simultaneously |
| CN110932078A (en) * | 2019-11-25 | 2020-03-27 | 中国科学院合肥物质科学研究院 | Medium-far infrared multiband laser |
Non-Patent Citations (1)
| Title |
|---|
| Electro-Optically Q-switched Tm:YAG Laser Pumped ZGP Optical-Parametric Oscillator;Marc Eichhorn, Antoine Hirth;《OSA / CLEO/QELS 2008》;20080731;正文第二节，图1 * |
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