CN113312207B - Data storage method adopting ferroelectric memory and programmable logic controller thereof - Google Patents

Data storage method adopting ferroelectric memory and programmable logic controller thereof Download PDF

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Publication number
CN113312207B
CN113312207B CN202110496904.8A CN202110496904A CN113312207B CN 113312207 B CN113312207 B CN 113312207B CN 202110496904 A CN202110496904 A CN 202110496904A CN 113312207 B CN113312207 B CN 113312207B
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data
data area
ferroelectric memory
area
backup
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CN113312207A (en
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邹德文
肖仁杰
方勇国
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Arestek Intelligence Technology Shenzhen Co ltd
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Arestek Intelligence Technology Shenzhen Co ltd
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00Error detection; Error correction; Monitoring
    • G06F11/07Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/14Error detection or correction of the data by redundancy in operation
    • G06F11/1402Saving, restoring, recovering or retrying
    • G06F11/1446Point-in-time backing up or restoration of persistent data
    • G06F11/1448Management of the data involved in backup or backup restore
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

The application provides a data storage method adopting a ferroelectric memory and a programmable logic controller thereof, wherein the data of the existing data area and the data of the backup data area are compared, if different data are found, the different data are written into the backup data area and the ferroelectric memory, and then the data of the existing data area and the data of the backup data area are restarted to be detected until the existing data area and the backup data area are completely the same.

Description

Data storage method adopting ferroelectric memory and programmable logic controller thereof
Technical Field
The application relates to the field of computer operation, in particular to a data storage method adopting a ferroelectric memory and a programmable logic controller thereof.
Background
The main memory of the current programmable logic controller is an SRAM (static random access memory), the data storage rate of the SRAM is fast, but the biggest disadvantage of the SRAM is that batteries are needed to be reserved for power supply, the batteries are inconvenient for transportation of the programmable logic controller, and the ferroelectric memory is a good substitute because the batteries do not need to be reserved with a power supply, however, the data storage rate of the ferroelectric memory is not very fast, so when the ferroelectric memory is used, when the data amount is large, the storage is needed for a long time, and the operation instantaneity of the whole system is affected, and therefore a method is needed to enable the ferroelectric memory to replace the SRAM as the memory of the programmable logic controller.
Disclosure of Invention
The present application aims to solve at least one of the technical problems existing in the prior art. Therefore, the application provides a data storage method adopting a ferroelectric memory and a programmable logic controller thereof, and the technical scheme is as follows:
in a first aspect, the present application provides a data storage method using a ferroelectric memory, applied to a programmable logic controller, where the programmable logic controller includes a memory and a ferroelectric memory, and the memory includes an existing data area and a backup data area, the method includes:
comparing the data of the existing data area with the data of the backup data area;
if different data are found, writing the different data into the backup data area and the ferroelectric memory;
and then restarting to detect the data of the existing data area and the data of the backup data area until the existing data area and the backup data area are identical.
Further, a data storage area is provided in the ferroelectric memory, and data is stored in the data storage area.
Further, the original data of the backup data area is derived from the data storage area.
Further, when the programmable logic controller is powered down and data power-down storage is needed, the method is automatically operated.
Further, after finding a different data between the existing data area and the backup data area, no further subsequent data is detected.
Further, the storing and writing of a different data are each completed in one time period.
In a second aspect, the present application also provides a programmable logic controller, which adopts any one of the above data storage methods using ferroelectric memories, comprising:
a processor;
the memory is in signal connection with the processor;
and the processor and the memory are both in signal connection with the ferroelectric memory.
Further, the memory includes an existing data area for storing existing data and a backup data area for reading backup data from the ferroelectric memory.
Further, the processor controls the existing data area and the backup data area to perform data comparison.
Further, the processor may control the existing data area to write data into the ferroelectric memory.
Compared with the prior art, the application provides a data storage method adopting the ferroelectric memory and a programmable logic controller thereof, the ferroelectric memory is adopted to replace the SRAM as the memory of the programmable logic controller, however, the data storage rate of the ferroelectric memory is lower than that of the SRAM, so when the data quantity is more, the ferroelectric memory needs longer time to store, thereby influencing the real-time performance of the whole system.
Additional aspects of the application will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the application.
Drawings
The foregoing and/or additional aspects and advantages of the application will become apparent and may be better understood from the following description of embodiments taken in conjunction with the accompanying drawings in which:
FIG. 1 is a flow chart of a data storage method employing a ferroelectric memory;
fig. 2 is a schematic diagram of a programmable logic controller.
Detailed Description
Embodiments of the present application are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the application.
In the description of the present application, it should be understood that references to orientation descriptions such as upper, lower, front, rear, left, right, etc. are based on the orientation or positional relationship shown in the drawings, are merely for convenience in describing the present application and simplifying the description, and do not indicate or imply that the apparatus or element in question must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present application.
In a first aspect, referring to fig. 1, the present application provides a data storage method using a ferroelectric memory, applied to a programmable logic controller, the programmable logic controller including a memory and a ferroelectric memory, the memory including an existing data area and a backup data area, the method comprising:
step S1, comparing the data of the existing data area with the data of the backup data area;
step S2, if different data are found, writing the different data into the backup data area and the ferroelectric memory;
and S3, restarting to detect the data of the existing data area and the data of the backup data area until the existing data area and the backup data area are identical.
In this embodiment, for the data storage rate of the ferroelectric memory is slower, the inventor chooses to increase the backup data area on the basis of the original data area, and compares the existing data area with the backup data area to select different data in the existing data area, so as to reduce the data to be stored, thereby accelerating the data storage rate and further ensuring the real-time performance of the system operation.
Further, a data storage area is arranged in the ferroelectric memory, data is stored in the data storage area, and original data of the backup data area is derived from the data storage area.
In this embodiment, the data structures among the data storage area, the existing data area and the backup data area are the same, and when a different data is found between the existing data area and the backup data area, the different data will cover the original data of the data storage area and the backup data area, so that the next comparison is avoided to find the same data.
Further, when the programmable logic controller is powered down and data power-down storage is needed, the method is automatically operated.
In this embodiment, the data power-down storage is an important ring in the industrial system, some real-time conversion is performed, but the data of which the final result needs to be recorded is likely to be lost when power is lost, the original technology is to use the combination of the SRAM and the battery, the data storage rate of the SRAM is fast and can be directly stored, but the transportation of the battery is a big problem, so the ferroelectric memory is used as a memory for replacing the SRAM, and the method provided by the application can ensure that the ferroelectric memory can store all the data needing to be changed in a short period of time when power-down storage is performed by reducing the data needing to be stored.
Further, after finding a different data between the existing data area and the backup data area, no further data is detected.
In this embodiment, the data structures among the data storage area, the existing data area and the backup data area are identical, which means that the positions of one data storage area, the existing data area and the backup data area are identical, so that the data of the existing data area and the backup data area are compared, the values of the same positions are compared, when the values of the same positions are found to be different, the values of the backup data area are changed, the same positions of the data storage area are found, the values are changed, and after the different data between the existing data area and the backup data area are found, the detection of the subsequent data is not performed any more, because if the scanning is continued, the second different data may be found before the first different data is not completely written, which may lead to congestion of the data storage, and therefore, the subsequent data is not detected until the first different data is completely written into the ferroelectric memory.
Further, the storing and writing of a different data is completed in a time period.
In this embodiment, the writing of the storage of one different data is completed in one time period, assuming that two different data exist in the existing data area, namely, the first different data arranged in front of the comparison and the second different data arranged in back of the comparison, respectively, in the first time period, the first different data are compared because the first different data are arranged in front of the comparison, the first different data cover the original data of the data storage area and the backup data area, then the second time period is started, in the second time period, the first different data do not exist any more, because the original position between the existing data area and the backup data area is the same data, only the second different data arranged in back of the comparison can be detected, the second different data cover the original data of the data storage area and the backup data area, then the third time period is started, in the third time period, the data of the existing data area and the backup data area are completely the same, and after the comparison step is completed, the whole storage process is ended.
In a second aspect, referring to fig. 2, the present application further provides a programmable logic controller, applying any one of the above data storage methods using ferroelectric memory, including:
a processor 100;
a memory 102, the memory 102 being in signal connection with the processor 100;
ferroelectric memory 101, processor 100 and memory 102 are in signal connection with the ferroelectric memory.
In this embodiment, the ferroelectric memory 101 is a random access memory, which combines the fast read and write access of the dynamic random access memory with the data retention capability after the power is turned off, and the ferroelectric memory 101 has the characteristics of stable data storage and storage without a battery compared with the SRAM in the prior art, thus solving the battery transportation problem of the programmable logic controller using the SRAM.
Further, the memory 102 includes an existing data area 103 and a backup data area 104, the existing data area 103 is used for storing existing data, the backup data area 104 reads backup data from the ferroelectric memory 101, the processor 100 controls the existing data area 103 and the backup data area 104 to perform data comparison, and the processor 100 can control the existing data area 103 to write data into the ferroelectric memory 101.
In this embodiment, aiming at the problem of insufficient data storage rate of the ferroelectric memory 101, the processor 100 controls the memory to be divided into two data areas, one is the existing data area 103 and the other is the backup data area 104, the existing data area 103 is used for storing existing data (such as data characteristics of production quantity and the like), when the processor 100 is required to store the existing data, the processor 100 controls the existing data area 103 and the backup data area 104 to perform data comparison, discovers that the first different data is sequentially arranged, then the processor 100 covers the original data of the backup data area 104 and the original data of the ferroelectric memory 101 with the first different data which are sequentially arranged, so that the second different data is sequentially arranged, and the like, and finally the data of the existing data area 103 and the backup data area 104 are completely identical, and the comparison is stopped.
It should be noted that the comparison and storage of one different data is completed in one time period, the comparison and storage of the next different data is completed in the next time period, and the original data of the backup data area 104 is imported from the ferroelectric memory 101, so that the data of the backup data area 104 and the ferroelectric memory 101 are consistent throughout the whole storage process.
In the description of the present application, unless explicitly defined otherwise, terms such as arrangement, installation, connection, etc. should be construed broadly and the specific meaning of the terms in the present application can be reasonably determined by a person skilled in the art in combination with the specific contents of the technical scheme.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
While the preferred embodiment of the present application has been described in detail, the present application is not limited to the above embodiments, and those skilled in the art can make various equivalent modifications or substitutions without departing from the spirit of the present application, and the equivalent modifications or substitutions are intended to be included in the scope of the present application as defined in the appended claims.

Claims (9)

1. A data storage method using a ferroelectric memory, applied to a programmable logic controller, the programmable logic controller comprising a memory and a ferroelectric memory, the memory comprising an existing data area and a backup data area, comprising:
comparing the data of the existing data area with the data of the backup data area;
if different data are found, writing the different data into the backup data area and the ferroelectric memory;
then restarting to detect the data of the existing data area and the data of the backup data area until the existing data area and the backup data area are completely the same;
wherein, after finding one of the different data between the existing data area and the backup data area, no subsequent data is detected.
2. A data storage method using a ferroelectric memory according to claim 1, wherein a data storage area in which data is stored is provided in the ferroelectric memory.
3. A data storage method employing a ferroelectric memory according to claim 2, wherein the original data of said backup data area is derived from said data storage area.
4. A data storage method using a ferroelectric memory according to claim 1, wherein said method is automatically performed when said programmable logic controller is powered down and data is required to be stored.
5. A data storage method using a ferroelectric memory according to claim 1, wherein the storing and writing of one of said different data are each completed in one time period.
6. A programmable logic controller employing a data storage method employing a ferroelectric memory as claimed in any one of claims 1 to 5, comprising:
a processor;
the memory is in signal connection with the processor;
and the processor and the memory are both in signal connection with the ferroelectric memory.
7. The programmable logic controller of claim 6, wherein the memory includes an existing data area for storing existing data and a backup data area for reading backup data from the ferroelectric memory.
8. A programmable logic controller according to claim 7, wherein said processor controls data comparison between said existing data area and said backup data area.
9. A programmable logic controller according to claim 7, wherein said processor is operative to control said existing data area to write data into said ferroelectric memory.
CN202110496904.8A 2021-05-07 2021-05-07 Data storage method adopting ferroelectric memory and programmable logic controller thereof Active CN113312207B (en)

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CN205563224U (en) * 2016-02-23 2016-09-07 西门子公司 Programmable logic controler and data process system
US9761312B1 (en) * 2016-03-16 2017-09-12 Micron Technology, Inc. FeRAM-DRAM hybrid memory
CN109643714A (en) * 2016-08-31 2019-04-16 美光科技公司 Composite memory device
CN111443873A (en) * 2020-03-27 2020-07-24 深圳天岳创新科技有限公司 Method and device for managing Nand Flash memory

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EP1324495B1 (en) * 2001-12-28 2011-03-30 Fujitsu Semiconductor Limited Programmable logic device with ferrroelectric configuration memories
JP2006338370A (en) * 2005-06-02 2006-12-14 Toshiba Corp Memory system

Patent Citations (7)

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Publication number Priority date Publication date Assignee Title
CN101251826A (en) * 2007-02-27 2008-08-27 深圳市同洲电子股份有限公司 Flash memory, method and apparatus for data management of flash memory
CN101634958A (en) * 2008-07-23 2010-01-27 佛山市顺德区顺达电脑厂有限公司 Flash memory with secondary backup mechanism
CN105512056A (en) * 2014-09-24 2016-04-20 中兴通讯股份有限公司 Method and device for data storage, and terminal
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